CN105973967A - Atmosphere controllable field effect transistor (FET) sealed testing device for plurality of devices - Google Patents
Atmosphere controllable field effect transistor (FET) sealed testing device for plurality of devices Download PDFInfo
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- CN105973967A CN105973967A CN201610557234.5A CN201610557234A CN105973967A CN 105973967 A CN105973967 A CN 105973967A CN 201610557234 A CN201610557234 A CN 201610557234A CN 105973967 A CN105973967 A CN 105973967A
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- atmosphere
- electrode
- sealing
- effect transistor
- sample
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Abstract
The invention discloses an atmosphere controllable field effect transistor (FET) sealed testing device for a plurality of devices and belongs to the technical field of physical testing. The device is divided into two parts: an atmosphere control unit and a testing unit, wherein the atmosphere control unit comprises a gas inlet pipe, a gas outlet pipe, a vacuum meter and a vacuum pump; the testing unit comprises a sample platform and an electrode leading-out device; the sample platform is connected with the electrode leading-out device; and an electrode wire led out by the electrode leading-out device is connected with a digital source meter. The adjustment of different atmosphere can be realized through matching the device with a humidity generation tank and standard gas through atmosphere controllability and the device is matched with the vacuum pump to realize vacuum atmosphere, so that performance characterization of a proton type FET and a gas-sensitive FET can be facilitated. The whole device can be wound with metal, and an electromagnetic shielding function of a Faraday cage is realized; and the measurement of fine current with a nano-ampere grade or below is facilitated. The plurality of devices can be measured through the testing device at the same time.
Description
Technical field
The present invention relates to a kind of atmosphere controlled many devices field-effect transistor (FET) sealing test device, belong to physical testing skill
Art field.
Background technology
Field-effect transistor (Field Effect Transistor, FET) is called for short field effect transistor.Conduction is participated in by majority carrier,
Also referred to as unipolar transistor.It belongs to voltage controlled semiconductor device.FET has three transistors, grid, drain electrode, source
Pole, its feature is that the internal resistance of grid is high, can reach hundreds of megaohm for example with earth silicon material, belongs to voltage control
Type device processed.Field effect transistor can be applicable to amplifying circuit, electrical switch, impedance transformation, constant-current source, gas sensor, biology
Base wearable device (proton conduction FET) etc..
For for gas sensor and the FET of bio-based wearable device, usually need during performance characterization to use specific atmosphere
Such as hydrogen, humidity, VOCs Standard Gases etc., requirement simultaneously can carry out Multi-example test to measure the repeatability of device simultaneously
Single factor test performance comparison with different components.Therefore, manufacture and design one and can measure multiple sample, the controlled field effect of atmosphere simultaneously
The pass that is developed in transistor sealing test device gas sensor based on FET for future and bio-based wearable device field weighs
Want.
Summary of the invention
It is an object of the invention to provide a kind of atmosphere controlled field-effect transistor sealing test device.The purpose of the present invention is by following
Technical scheme realizes.
A kind of atmosphere controlled field-effect transistor sealing test device, including sample load bearing unit and atmosphere holding unit, sample holds
Carrier unit is by atmosphere holding unit cincture, and atmosphere holding unit makes whole test device be in required atmosphere, sample load bearing unit
Including sample stage and electrode pulling device, electrode pulling device makes sample constitute path with external testing instrument.During test, by sample
Product are placed on sample stage, make whole test device be in required atmosphere by atmosphere holding unit, and electrode pulling device makes sample
Path is constituted, it is achieved the performance test to FET device with external testing instrument (such as digital sourcemeter Keithley 4200).
Further, described atmosphere holding unit includes hermetic container, the air inlet pipeline on hermetic container, outlet pipe, pressure
Table and gas suction device.
Further, described atmosphere holding unit includes hermetic container, two air inlet pipe on hermetic container, escape pipe,
One vacuum meter and vacuum pump.
The electrode of sample stage is drawn and realizes constituting path with sample and external testing instrument, realize the sealing of test device simultaneously,
It it is the key of the present invention.To this end, sample load bearing unit and atmosphere holding unit have been done well-designed by inventor, above-mentioned to realize
Target.
The hermetic container of atmosphere holding unit includes main tank body, the prominent cylinder on main tank body top and the sealing of airtight prominent cylinder
Part, sealing member is divided into two parts: sealing member a and sealing member b, sealing member a and sealing member b are existed by mouth of pipe screw thread and rubber ring
The outer side compression of prominent cylinder seals, and sealing member b is divided into internals and outer member two parts, internals and outer member to be mechanically connected, internals with enter
Air pipe, outlet pipe and Pressure gauge connect and have electrode converting interface, and internals weld together with prominent barrel top, outer member
On have electrode converting interface；Sample load bearing unit includes sample stage, connector and fixing sample stage and the retaining element of connector,
Sample electrode on sample stage is connected with the cable on connector after drawing, and cable is by the electrode converting interface in sealing member b internals
Connecting and draw and with epoxy sealing, the electrode wires of extraction is connected with digital sourcemeter by the electrode converting interface in sealing member b outer member
Connect.
Further, electrode converting interface number is n times of digital sourcemeter number of poles, and n is natural number, it is possible to achieve survey simultaneously
Measure n sample.
Further, whole device is becket around, it is achieved the electro-magnetic screen function of faraday cup, beneficially nA and following
Fine current is measured.
The invention have the advantages that this device uses atmosphere controlled, coordinate from humidity generation tank, Standard Gases and can realize different gas
The regulation of atmosphere, coordinates with vacuum pump and can realize vacuum atmosphere, beneficially the performance characterization of proton type FET, air-sensitive FET；By changing
Variable electrode quantity, can realize organizing the test of sample F ET more simultaneously；This device can realize Faraday cage shield electromagnetic interference, real
Existing na and following fine current are measured；This device uses welded seal and epoxy sealing, can vacuum-resistant, pressure 1MPa
Above.
Accompanying drawing explanation
Fig. 1 is atmosphere variable many devices FET sealing test device sectional view of the present invention.
Fig. 2 is atmosphere variable many devices FET sealing test device top half enlarged section of the present invention.
Fig. 3 is atmosphere variable many devices FET sealing test device sealing member b internals top view of the present invention.
Fig. 4 is atmosphere variable many devices FET sealing test device sealing member b outer member top view of the present invention.
Reference: 1-sealing member, 2-sealing member a, 3-sealing member b, 4-electrode converting interface, 5-highlights cylinder, 6-air inlet pipe,
7-escape pipe, the main tank body of 8-, 9-connector, 10-sample stage, 11-screw, 12-vacuum meter, 13-sealing member b outer member, 14-rubber
Cushion rubber.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention will be further described.
A kind of atmosphere controlled field-effect transistor sealing test device, including sample load bearing unit and atmosphere holding unit, sample holds
Carrier unit is by atmosphere holding unit cincture, and atmosphere holding unit makes whole test device be in required atmosphere, sample load bearing unit
Including sample stage and electrode pulling device, electrode pulling device makes sample constitute path with external testing instrument.Described atmosphere keeps
Unit includes hermetic container, air inlet pipeline, outlet pipe, Pressure gauge and the gas suction device on hermetic container.Atmosphere keeps
The hermetic container of unit includes main tank body 8, the prominent cylinder 5 on main tank body 8 top and the sealing member 1 of airtight prominent cylinder 5,
Sealing member 1 is divided into sealing member a2 and sealing member b3 two parts, sealing member a2 and sealing member b3 by mouth of pipe screw thread and rubber ring 1
Sealing in the prominent outer side compression of cylinder 5, sealing member b is divided into internals and outer member two parts, internals and outer member to be mechanically connected, internals
Be connected and have electrode converting interface 4 with air inlet pipeline 6, outlet pipe 7 and Pressure gauge 12, internals are welded with prominent cylinder 5 top
It is connected together, outer member has electrode converting interface 4；Sample load bearing unit includes sample stage 10, connector 9 and fixing sample
The retaining element 11 of platform and connector, the sample electrode on sample stage 10 is connected with the cable on connector 9 after drawing, cable
Being connected by electrode converting interface 4 in sealing member b3 internals and draw and with epoxy sealing, the electrode wires of extraction passes through sealing member
Electrode converting interface 4 in b3 outer member is connected with digital sourcemeter.During test, sample is placed on sample stage, keeps single by atmosphere
Unit makes whole test device be in required atmosphere, and electrode pulling device makes sample and external testing instrument (such as digital sourcemeter
Keithley 4200) constitute path, it is achieved the performance test to FET device.
Embodiment 1
At prefabricated Au electrode containing 300nm SiO2Si substrate on prepare the ZnO film of different-thickness, utilize Au pair
Electrode is source-drain electrode, and Si is grid, SiO2For dielectric layer, preparation has the Au hearth electrode FET of different-thickness ZnO film.
By thickness be 50,100 and the ZnO FET of 200nm is fixed on sample stage by insulating cement, draws Au by conduction gold size
Line is connected with each self-electrode.Then sealing fixing by the sealing member containing sample stage and tank body, electrode contact is connected with digital sourcemeter,
Different humidity (0-100%RH) is realized, it is achieved many by mass flowmenter regulation dry air and humidity generation tank air mass flow
The test that individual ZnO sample F ET performance changes with humidity.
Embodiment 2
Containing 300nm SiO2Si substrate on prepare different-thickness HKUST-1 thin film (HKUST-1 be copper ion with
Trimesic acid coordination gained metal-organic framework material), it is then source-drain electrode at thin film upper surface thermal evaporation deposition Au electrode,
Si is grid, SiO2For dielectric layer, preparation has the Au top electrode FET of different-thickness HKUST-1 thin film.By thickness it is
10, the Au electrode FET of the HKUST-1 thin film of 20 and 50nm is fixed on sample stage by insulating cement, passes through conductive gold
Glue is drawn Au line and is connected with each self-electrode.Then the sealing member containing sample stage and tank body are sealed fixing, electrode contact and numeral
Source table is connected, and regulates prefabricated Standard Gases (volume: 5%H by mass flowmenter2, 95%N2), pure nitrogen gas and humidity generation tank
Gas flow realizes different humidity (0-100%RH) and the control of density of hydrogen (0.05-0.5%), it is achieved multiple sample F ET
The test that performance changes with density of hydrogen and humidity.
Embodiment 3
At prefabricated Pd electrode containing 300nm SiO2Si substrate on prepare the cupric coordination tetracarboxylic phenyl porphyrin of different-thickness
(Cu-TCPP) thin film, utilizing Pd is source-drain electrode to electrode, and Si is grid, SiO2For dielectric layer, preparation has different-thickness
The Pd electrode FET of Cu-TCPP thin film.By thickness be 30,50, the Pd electrode FET of the Cu-TCPP thin film of 100nm leads to
Cross insulating cement to be fixed on sample stage, draw Au line by conduction gold size and be connected with each self-electrode.Then close by containing sample stage
Sealing and tank body seal fixing, and electrode contact is connected with digital sourcemeter, by mass flowmenter regulate prefabricated Standard Gases (volume:
5%H2, 95%N2), pure nitrogen gas and humidity generation tank gas flow realize different humidity (0-100%RH) and density of hydrogen
(0.05-0.5%) control, it is achieved the test that multiple sample F ET performances change with density of hydrogen and humidity.
Embodiment 4
At prefabricated Au electrode containing 300nm SiO2Si substrate on the pentacene thin film of vacuum moulding machine different-thickness, utilize
Au is source-drain electrode to electrode, and Si is grid, SiO2For dielectric layer, preparation has the Au electrode FET of different-thickness pentacene thin film.
By thickness be 50,100, pentacene thin film FET of 200nm be fixed on sample stage by insulating cement, drawn by conduction gold size
Go out Au line to be connected with each self-electrode.Then the sealing member containing sample stage and tank body are sealed fixing, electrode contact and digital sourcemeter
It is connected, controls vacuum by vacuum pump, it is achieved multiple sample F ET performances are in vacuum and the test of normal pressure atmosphere.
Claims (6)
1. an atmosphere controlled field-effect transistor sealing test device, it is characterised in that include sample load bearing unit and atmosphere holding unit, sample
Load bearing unit is by atmosphere holding unit cincture, and atmosphere holding unit makes whole test device be in required atmosphere, and sample load bearing unit includes sample stage
And electrode pulling device, electrode pulling device makes sample constitute path with external testing instrument.
Atmosphere the most according to claim 1 controlled field-effect transistor sealing test device, it is characterised in that described atmosphere holding unit includes
Hermetic container, air inlet pipeline, outlet pipe, Pressure gauge and the gas suction device on hermetic container.
Atmosphere the most according to claim 1 controlled field-effect transistor sealing test device, it is characterised in that described atmosphere holding unit includes
Hermetic container, two air inlet pipe on hermetic container, an escape pipe, a vacuum meter and vacuum pump.
Atmosphere the most according to claim 1 controlled field-effect transistor sealing test device, it is characterised in that the airtight appearance of atmosphere holding unit
Device includes main tank body, the prominent cylinder on main tank body top and the sealing member of airtight prominent cylinder, and sealing member is divided into two parts: sealing member a and sealing
Part b, sealing member a and sealing member b are sealed in the outer side compression of prominent cylinder by mouth of pipe screw thread and rubber ring, and sealing member b is divided into internals and outer member two
Part, internals and outer member are mechanically connected, and internals are connected and have electrode converting interface, internals and prominent circle with air inlet pipeline, outlet pipe and Pressure gauge
Cylinder welded top together, outer member has electrode converting interface；Sample load bearing unit includes sample stage, connector and fixing sample stage and connector
Retaining element, sample electrode on sample stage is connected with the cable on connector after drawing, and cable passes through the electrode converting interface in sealing member b internals
Connecting and draw and with epoxy sealing, the electrode converting interface that the electrode wires of extraction is passed through in sealing member b outer member is connected with digital sourcemeter.
Atmosphere the most according to claim 4 controlled field-effect transistor sealing test device, it is characterised in that electrode converting interface number is numeral
N times of source table number of poles, n is natural number.
Atmosphere the most according to claim 1 controlled field-effect transistor sealing test device, it is characterised in that whole device be becket around.
Priority Applications (1)
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| CN201610557234.5A CN105973967B (en) | 2016-07-15 | 2016-07-15 | A kind of controllable more device field-effect transistor sealing test devices of atmosphere |
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| CN201610557234.5A CN105973967B (en) | 2016-07-15 | 2016-07-15 | A kind of controllable more device field-effect transistor sealing test devices of atmosphere |
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| CN108539019A (en) * | 2018-04-11 | 2018-09-14 | 南京邮电大学 | Metal organic frame floating gate type organic field effect tube memory and preparation method thereof |
| CN110132824A (en) * | 2018-02-02 | 2019-08-16 | 中国科学院福建物质结构研究所 | A kind of simulating test device and its application for air humidity photo-thermal environment |
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| CN105973967B (en) | 2018-06-15 |
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