CN105973967B - A kind of controllable more device field-effect transistor sealing test devices of atmosphere - Google Patents
A kind of controllable more device field-effect transistor sealing test devices of atmosphere Download PDFInfo
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- CN105973967B CN105973967B CN201610557234.5A CN201610557234A CN105973967B CN 105973967 B CN105973967 B CN 105973967B CN 201610557234 A CN201610557234 A CN 201610557234A CN 105973967 B CN105973967 B CN 105973967B
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- atmosphere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Abstract
The invention discloses a kind of controllable more device field-effect transistor (FET) sealing test devices of atmosphere, belong to physical testing technical field.Device is divided into two parts：Control climate unit, including air inlet pipe, air outlet pipe, vacuum meter and vacuum pump；Test cell, including sample stage and electrode pulling device, sample stage is connect with electrode pulling device, the electrode wires and the connection of digital sourcemeter that electrode pulling device is drawn.The present apparatus is controllable using atmosphere, and the adjusting of different atmosphere can be realized with humidity generation tank, Standard Gases cooperation, coordinates with vacuum pump and vacuum atmosphere can be achieved, conducive to proton type FET, the performance characterization of air-sensitive FET.Whole device may be designed as becket around realizing the electro-magnetic screen function of faraday cup, measured conducive to Naan and following fine current.The present apparatus can also be achieved multiple devices and measure simultaneously.
Description
Technical field
The present invention relates to a kind of controllable more device field-effect transistor (FET) sealing test devices of atmosphere, belong to physics survey
Try technical field.
Background technology
Field-effect transistor (Field Effect Transistor, FET) abbreviation field-effect tube.Joined by majority carrier
With conduction, also referred to as unipolar transistor.It belongs to voltage controlled semiconductor device.There are three transistor, grid, leakages by FET
Pole, source electrode, its feature are that the internal resistance of grid is high, can reach hundreds of megaohms for example, by using earth silicon material, belong to
Voltage-controlled device.Field-effect tube can be applied to amplifying circuit, electronic switch, and impedance converts, constant-current source, gas sensor,
Biology base wearable device (proton conducts FET) etc..
For being used for the FET of gas sensor and biology base wearable device, when performance characterization, usually needs to use specific
Atmosphere hydrogen, humidity, VOCs Standard Gases etc., while require that Multi-example test can be carried out at the same time to measure the weight of device
The single factor test performance comparison of renaturation and different components.Therefore, design and manufacture are a kind of can measure multiple samples, the controllable field of atmosphere simultaneously
Development of the effect transistor sealing test device for gas sensor of the future based on FET and biology base wearable device field
It is most important.
Invention content
The object of the present invention is to provide a kind of controllable field-effect transistor sealing test devices of atmosphere.The purpose of the present invention is led to
Cross following technical scheme realization.
A kind of controllable field-effect transistor sealing test device of atmosphere, including sample load bearing unit and atmosphere holding unit,
Sample load bearing unit is surround by atmosphere holding unit, and atmosphere holding unit makes entire test device be in required atmosphere, sample
Load bearing unit includes sample stage and electrode pulling device, and electrode pulling device makes sample form access with external testing instrument.It surveys
During examination, sample is placed on sample stage, entire test device is made to be in required atmosphere by atmosphere holding unit, electrode is drawn
Device makes sample form access with external testing instrument (such as digital sourcemeter Keithley 4200), realizes the property to FET device
It can test.
Further, the atmosphere holding unit includes closed container, air inlet pipeline, outlet pipe on closed container,
Pressure gauge and gas suction device.
Further, the atmosphere holding unit includes closed container, two air inlet pipe, an outlet on closed container
Pipe, a vacuum meter and vacuum pump.
The electrode of sample stage is drawn into realization and forms access, while realize test device with sample and external testing instrument
Sealing is the key that the present invention.For this purpose, inventor sample load bearing unit and atmosphere holding unit have been done it is well-designed, with reality
Existing above-mentioned target.
The closed container of atmosphere holding unit includes main tank body, the protrusion cylinder on main tank body top and closed prominent cylinder
Sealing element, sealing element is divided into two parts：Sealing element a and sealing element b, sealing element a and sealing element b pass through nozzle screw thread and rubber
The side compression sealing outside prominent cylinder is enclosed, b points of sealing element is internals and outer member two parts, and internals and outer member are mechanically connected, internals
It being connect with air inlet pipeline, outlet pipe and pressure gauge and is provided with electrode converting interface, internals weld together with prominent barrel top,
Electrode converting interface is provided in outer member；Sample load bearing unit includes consolidating for sample stage, connector and fixed sample stage and connector
Determine part, the sample electrode on sample stage with the cable connection on connector, cable passes through the electricity in sealing element b internals after drawing
Converting interface connection in pole is drawn simultaneously to be sealed with epoxy resin, the electrode wires of extraction by the electrode converting interface in sealing element b outer members with
Digital sourcemeter connects.
Further, electrode converting interface number is n times of digital sourcemeter number of poles, and n is natural number, can be realized simultaneously
Measure n sample.
Further, whole device is becket around the electro-magnetic screen function of faraday cup being realized, conducive to nA and following
Fine current measure.
The present invention has the following advantages：The present apparatus is controllable using atmosphere, can be realized not with humidity generation tank, Standard Gases cooperation
With the adjusting of atmosphere, coordinate with vacuum pump and vacuum atmosphere can be achieved, conducive to proton type FET, the performance characterization of air-sensitive FET；Pass through
Change number of electrodes, can realize the test of multigroup sample F ET simultaneously；The present apparatus can realize Faraday cage shield electromagnetic interference,
Realize that Naan and following fine current measure；The present apparatus is sealed using welded seal and epoxy resin, can vacuum-resistant, pressure resistance
More than 1MPa.
Description of the drawings
Fig. 1 is the variable more device FET sealing test device sectional views of atmosphere of the present invention.
Fig. 2 is the variable more device FET sealing test devices top half enlarged sections of atmosphere of the present invention.
Fig. 3 is the variable more device FET sealing test devices sealing element b internals vertical views of atmosphere of the present invention.
Fig. 4 is the variable more device FET sealing test devices sealing element b outer member vertical views of atmosphere of the present invention.
Reference numeral：1- sealing elements, 2- sealing elements a, 3- sealing element b, 4- electrode converting interface, 5- protrude cylinder, 6- air inlets
Pipe, 7- air outlet pipes, 8- main tank bodies, 9- connectors, 10- sample stages, 11- screws, 12- vacuum meters, 13- sealing element b outer members, 14-
Rubber ring.
Specific embodiment
Below in conjunction with attached drawing, the present invention will be further described.
A kind of controllable field-effect transistor sealing test device of atmosphere, including sample load bearing unit and atmosphere holding unit,
Sample load bearing unit is surround by atmosphere holding unit, and atmosphere holding unit makes entire test device be in required atmosphere, sample
Load bearing unit includes sample stage and electrode pulling device, and electrode pulling device makes sample form access with external testing instrument.Institute
It states atmosphere holding unit and includes closed container, air inlet pipeline, outlet pipe, pressure gauge and gas suction dress on closed container
It puts.The closed container of atmosphere holding unit includes main tank body 8, the protrusion cylinder 5 on 8 top of main tank body and closed prominent cylinder 5
Sealing element 1, sealing element 1 divides for sealing element a2 and sealing element b3 two parts, and sealing element a2 and sealing element b3 pass through nozzle screw thread
With rubber ring 1 in prominent 5 outer side compression of cylinder sealing, b points of sealing element is internals and outer member two parts, and internals and outer member machinery connect
It connects, internals connect with air inlet pipeline 6, outlet pipe 7 and pressure gauge 12 and are provided with electrode converting interface 4, and internals are pushed up with prominent cylinder 5
Portion welds together, and electrode converting interface 4 is provided in outer member；Sample load bearing unit includes sample stage 10, connector 9 and fixed sample
The retaining element 11 of sample platform and connector, the sample electrode on sample stage 10 draw after with the cable connection on connector 9, cable
It is drawn by the connection of electrode converting interface 4 in sealing element b3 internals and is sealed with epoxy resin, the electrode wires of extraction pass through sealing
Electrode converting interface 4 in part b3 outer members is connect with digital sourcemeter.During test, sample is placed on sample stage, is kept by atmosphere
Unit makes entire test device be in required atmosphere, and electrode pulling device makes sample and external testing instrument (such as digital source
Table Keithley 4200) access is formed, realize the performance test to FET device.
Embodiment 1
Contain 300nm SiO in prefabricated Au electrodes2Si substrates on prepare the ZnO film of different-thickness, utilize Au pairs
Electrode is source-drain electrode, and Si is grid, SiO2For dielectric layer, the Au hearth electrodes FET with different-thickness ZnO film is prepared.It will be thick
It spends and is fixed on sample stage by insulating cement for the ZnO FET of 50,100 and 200nm, by conductive gold size extraction Au lines and respectively
Electrode connects.Then the sealing element containing sample stage and tank body sealing are fixed, electrode contact is connected with digital sourcemeter, passes through quality
Flowmeter adjusts dry air and humidity generation tank air mass flow realizes different humidity (0-100%RH), realizes multiple ZnO samples
The test that product FET performances change with humidity.
Embodiment 2
Containing 300nm SiO2Si substrates on prepare different-thickness HKUST-1 films (HKUST-1 for copper ion with
Trimesic acid coordination gained metal-organic framework material), it is then source-drain electrode in film upper surface thermal evaporation deposition Au electrodes,
Si is grid, SiO2For dielectric layer, the Au top electrodes FET with different-thickness HKUST-1 films is prepared.It is 10,20 by thickness
Be fixed on sample stage by insulating cement with the Au electrodes FET of the HKUST-1 films of 50nm, by conductive gold size draw Au lines with
Each self-electrode connection.Then the sealing element containing sample stage and tank body sealing are fixed, electrode contact is connected with digital sourcemeter, passes through
Mass flowmenter adjusts prefabricated Standard Gases (volume：5%H2, 95%N2), pure nitrogen gas and humidity generation tank gas flow realize it is different
Humidity (0-100%RH) and density of hydrogen (0.05-0.5%) control, realize multiple sample F ET performances with density of hydrogen and
The test of humidity variation.
Embodiment 3
Contain 300nm SiO in prefabricated Pd electrodes2Si substrates on prepare the cupric coordination tetracarboxylic phenyl of different-thickness
Porphyrin (Cu-TCPP) film is source-drain electrode to electrode using Pd, and Si is grid, SiO2For dielectric layer, preparing has different-thickness
The Pd electrodes FET of Cu-TCPP films.By thickness for 30,50, the Pd electrodes FET of the Cu-TCPP films of 100nm pass through insulating cement
It is fixed on sample stage, draw Au lines by conductive gold size connect with each self-electrode.Then by sealing element and tank containing sample stage
Body sealing is fixed, and electrode contact is connected with digital sourcemeter, and prefabricated Standard Gases (volume is adjusted by mass flowmenter：5%H2,
95%N2), pure nitrogen gas and humidity generation tank gas flow realize different humidity (0-100%RH) and density of hydrogen (0.05-
0.5%) test that multiple sample F ET performances change with density of hydrogen and humidity is realized in control.
Embodiment 4
Contain 300nm SiO in prefabricated Au electrodes2Si substrates on vacuum deposition different-thickness pentacene thin film, profit
It is source-drain electrode to electrode with Au, Si is grid, SiO2For dielectric layer, the Au electrodes with different-thickness pentacene thin film are prepared
FET.By thickness for 50,100, the pentacene thin film FET of 200nm be fixed on sample stage by insulating cement, pass through conductive gold size
Au lines are drawn to connect with each self-electrode.Then the sealing element containing sample stage and tank body sealing are fixed, electrode contact and digital source
Table is connected, and controls vacuum degree by vacuum pump, realizes test of multiple sample F ET performances in vacuum and normal pressure atmosphere.
Claims (5)
1. a kind of controllable field-effect transistor sealing test device of atmosphere, which is characterized in that including sample load bearing unit and atmosphere
Holding unit, sample load bearing unit are surround by atmosphere holding unit, and atmosphere holding unit makes entire test device be in required gas
In atmosphere, sample load bearing unit includes sample stage and electrode pulling device, and electrode pulling device makes sample and external testing instrument structure
Into access；The closed container of atmosphere holding unit includes main tank body, the protrusion cylinder on main tank body top and closed prominent cylinder
Sealing element, sealing element is divided into two parts：Sealing element a and sealing element b, sealing element a and sealing element b pass through nozzle screw thread and rubber
The side compression sealing outside prominent cylinder is enclosed, b points of sealing element is internals and outer member two parts, and internals and outer member are mechanically connected, internals
It being connect with air inlet pipeline, outlet pipe and pressure gauge and is provided with electrode converting interface, internals weld together with prominent barrel top,
Electrode converting interface is provided in outer member；Sample load bearing unit includes consolidating for sample stage, connector and fixed sample stage and connector
Determine part, the sample electrode on sample stage with the cable connection on connector, cable passes through the electricity in sealing element b internals after drawing
Converting interface connection in pole is drawn simultaneously to be sealed with epoxy resin, the electrode wires of extraction by the electrode converting interface in sealing element b outer members with
Digital sourcemeter connects.
2. the controllable field-effect transistor sealing test device of atmosphere according to claim 1, which is characterized in that the atmosphere
Holding unit includes closed container, air inlet pipeline, outlet pipe, pressure gauge and gas suction device on closed container.
3. the controllable field-effect transistor sealing test device of atmosphere according to claim 1, which is characterized in that the atmosphere
Holding unit includes closed container, two air inlet pipe, an air outlet pipe, a vacuum meter and vacuum pump on closed container.
4. the controllable field-effect transistor sealing test device of atmosphere according to claim 1, which is characterized in that electrode is transferred
Mouth number is n times of digital sourcemeter number of poles, and n is natural number.
5. the controllable field-effect transistor sealing test device of atmosphere according to claim 1, which is characterized in that whole device
Be becket around.
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| CN110132824A (en) * | 2018-02-02 | 2019-08-16 | 中国科学院福建物质结构研究所 | A kind of simulating test device and its application for air humidity photo-thermal environment |
| CN108539019A (en) * | 2018-04-11 | 2018-09-14 | 南京邮电大学 | Metal organic frame floating gate type organic field effect tube memory and preparation method thereof |
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