CN105955392B - Band-gap reference voltage source with base current compensation characteristic - Google Patents
Band-gap reference voltage source with base current compensation characteristic Download PDFInfo
- Publication number
- CN105955392B CN105955392B CN201610395406.3A CN201610395406A CN105955392B CN 105955392 B CN105955392 B CN 105955392B CN 201610395406 A CN201610395406 A CN 201610395406A CN 105955392 B CN105955392 B CN 105955392B
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- Prior art keywords
- pmos
- triode
- connects
- drain electrode
- resistance
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention belongs to the technical field of integrated circuits, and relates to a band-gap reference voltage source with a base current compensation characteristic. Mainly, by adding a resistor to a proper joint of a traditional reference voltage source through a circuit, through the additional voltage difference on the resistor, the influences of base current on finally-output voltage are eliminated, the band-gap reference voltage source with the base current compensation characteristic is finally generated, and therefore the band-gap reference voltage source has better temperature characteristics and can provide higher reference voltage precision.
Description
Technical field
The invention belongs to technical field of integrated circuits, is related to a kind of bandgap voltage reference with base current compensation characteristic
Source.
Background technology
Used as the basic module in high-precision A/D, D/A converter and system integrated chip (SOC), reference voltage source begins
It is eventually an extremely important and conventional module in integrated circuit, its effect is to provide one not with temperature and power supply for system
The voltage reference of voltage change.
Now generally using the side that will be added with two kinds of voltage of negative temperature coefficient with positive temperature coefficient in circuit design
Formula produces bandgap voltage reference, and the voltage that two have opposite temperature coefficients is added with appropriate weight, will be had
The voltage of zero-temperature coefficient, traditional bandgap voltage reference is due to the presence of base current, it will affect the current collection of triode
Electrode current size, so as to result in larger reference voltage temperature coefficient, needs to carry out base current compensation.
The content of the invention
It is to be solved by this invention, the problems referred to above are aiming at, propose a kind of band gap with base current compensation characteristic
Reference voltage source.
The technical scheme is that：As shown in figure 1, a kind of bandgap voltage reference with base current compensation characteristic
Source, including the first PMOS MP1, the second PMOS MP2, the 3rd PMOS MP3, the first NMOS tube MN1, the second NMOS tube MN2,
First resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the first triode QN1, the two or three pole
Pipe QN2, the 3rd triode Q3 and current source；Wherein, the source electrode of the first PMOS MP1 connects power supply, its grid and drain interconnection；The
The source electrode of two PMOSs MP2 connects power supply, and its grid connects the drain electrode of the first PMOS MP1；The source electrode of the 3rd PMOS MP3 connects electricity
Source, its grid connects the drain electrode of the second PMOS MP2；The colelctor electrode of the first triode QN1 connects the drain electrode of the first PMOS MP1, the
The base stage of one triode QN1 is followed by the drain electrode of the 3rd PMOS MP3 by first resistor R1；The colelctor electrode of the second triode QN2
Connect the drain electrode of the second PMOS MP2, the base stage of the second triode QN2 passes sequentially through 3rd resistor R3 and second resistance R2 is followed by
The tie point of one triode QN1 base stages and first resistor R1；The input of current source connects power supply, and output connects the first NMOS tube MN1
Drain electrode；The grid and drain interconnection of the first NMOS tube MN1, its source ground；The drain electrode of the second NMOS tube MN2 connects the first triode
The emitter stage of the emitter stage of QN1 and the second triode QN2, the grid of the second NMOS tube MN2 connects the drain electrode of the first NMOS tube MN1,
The source ground of the second NMOS tube MN2；The base stage of the 3rd triode Q3 connects the tie point of second resistance R2 and 3rd resistor R3, the
The base stage of three triode Q3 is interconnected with colelctor electrode, and its emitter stage is grounded after the 4th resistance R4；The drain electrode of the 3rd PMOS MP3
It is grounded after the 5th resistance R5.
Beneficial effects of the present invention are to increase resistance in appropriate node by circuit, using voltage difference extra on resistance,
So as to eliminate impact of the base current to final output voltage, the bandgap voltage reference with base current compensation is finally produced
Source, therefore the bandgap voltage reference has more preferable temperature characterisitic, using the teaching of the invention it is possible to provide higher reference voltage precision.
Description of the drawings
Fig. 1 is the bandgap voltage reference structural representation of the present invention；
Fig. 2 is the practical circuit diagram that bandgap voltage reference of the present invention is produced.
Specific embodiment
Below in conjunction with the accompanying drawings, technical scheme is described in detail：
The bandgap voltage reference physical circuit of the present invention is as shown in figure 1, including the first PMOS MP1, the second PMOS
MP2, the 3rd PMOS MP3, the first NMOS tube MN1, the second NMOS tube MN2, first resistor R1, second resistance R2,3rd resistor
R3, the 4th resistance R4, the 5th resistance R5, the first triode QN1, the second triode QN2, the 3rd triode Q3 and current source I1；
Wherein, the source electrode of the first PMOS MP1 connects power supply, its grid and drain interconnection；The source electrode of the second PMOS MP2 meets power supply VIN,
Its grid connects the drain electrode of the first PMOS MP1；The source electrode of the 3rd PMOS MP3 meets power supply VIN, and its grid connects the second PMOS
The drain electrode of MP2；The colelctor electrode of the first triode QN1 connects the drain electrode of the first PMOS MP1, and the base stage of the first triode QN1 passes through
First resistor R1 is followed by the drain electrode of the 3rd PMOS MP3；The colelctor electrode of the second triode QN2 connects the drain electrode of the second PMOS MP2,
The base stage of the second triode QN2 passes sequentially through 3rd resistor R3 and second resistance R2 is followed by the first triode QN1 base stages and first
The tie point of resistance R1；The input of current source meets power supply VIN, and output connects the drain electrode of the first NMOS tube MN1；First NMOS tube MN1
Grid and drain interconnection, its source ground；The drain electrode of the second NMOS tube MN2 connects the emitter stage and second of the first triode QN1
The emitter stage of triode QN2, the grid of the second NMOS tube MN2 connects the drain electrode of the first NMOS tube MN1, the source of the second NMOS tube MN2
Pole is grounded；The base stage of the 3rd triode Q3 connects the tie point of second resistance R2 and 3rd resistor R3, the base stage of the 3rd triode Q3
Interconnect with colelctor electrode, its emitter stage is grounded after the 4th resistance R4；The drain electrode of the 3rd PMOS MP3 is after the 5th resistance R5
Ground connection.
The present invention operation principle be：
If the collector current of QN1 is IC1, the collector current of QN2 is IC2, according to transistor collector electric current and VBEIt
Between relation, have：
If it is eight pipe parallel connections that QN1 is a pipe, QN2, so IS2=8IS1, and MP1 and MP2 constitutes 1:1 electricity
Stream mirror, so IC1=IC2, subtracted each other by formula (1) and (2)：
There is parasitic base resistance in transistor base, therefore we can regard R3 as the parasitic base resistance of QN2, etc.
The circuit that bandgap voltage reference is produced after effect is as shown in Fig. 2 the voltage difference at so R2 two ends is Δ VBEIf flowing through the electricity of R2
Flow for I, the base current of triode QN1 and QN2 is Ib, then have：
ΔVBE=VTLn8=I × R2
If it is equal in magnitude to choose R1 and R4, have：
As can be seen from the above equation, base current I is not included in the final expression formula of benchmarkb, reference voltage only with it is ambipolar
Emitter and base voltage difference VBE, the ratio and QN2 of resistance is relevant with the launch site area ratio of QN1, eliminates base
Electrode current IbImpact to reference voltage, using the teaching of the invention it is possible to provide higher reference voltage precision.Section 1 VBEWith negative temperature coefficient,
It is about -2mV/ DEG C during room temperature, Section 2It is about+0.087mV/ DEG C in room temperature with positive temperature coefficient,
By setting suitable operating point, two sums just can be made to reach zero-temperature coefficient at a certain temperature, so as to be had
The reference voltage of single order temperature-compensating.
Band gap reference with base current compensation proposed by the invention, eliminates base current to band-gap reference electricity
The impact of pressure, the bandgap voltage reference has more preferable temperature characterisitic, using the teaching of the invention it is possible to provide higher reference voltage precision.
Claims (1)
1. a kind of bandgap voltage reference with base current compensation characteristic, including the first PMOS MP1, the second PMOS
MP2, the 3rd PMOS MP3, the first NMOS tube MN1, the second NMOS tube MN2, first resistor R1, second resistance R2,3rd resistor
R3, the 4th resistance R4, the 5th resistance R5, the first triode QN1, the second triode QN2, the 3rd triode Q3 and current source；Its
In, the source electrode of the first PMOS MP1 connects power supply, its grid and drain interconnection；The source electrode of the second PMOS MP2 connects power supply, its grid
Pole connects the drain electrode of the first PMOS MP1；The source electrode of the 3rd PMOS MP3 connects power supply, and its grid connects the leakage of the second PMOS MP2
Pole；The colelctor electrode of the first triode QN1 connects the drain electrode of the first PMOS MP1, and the base stage of the first triode QN1 passes through first resistor
R1 is followed by the drain electrode of the 3rd PMOS MP3；The colelctor electrode of the second triode QN2 connects the drain electrode of the second PMOS MP2, the two or three pole
The base stage of pipe QN2 passes sequentially through 3rd resistor R3 and second resistance R2 is followed by the first triode QN1 base stages with first resistor R1
Tie point；The input of current source connects power supply, and output connects the drain electrode of the first NMOS tube MN1；The grid of the first NMOS tube MN1 and drain electrode
Interconnection, its source ground；The drain electrode of the second NMOS tube MN2 connects sending out for the emitter stage of the first triode QN1 and the second triode QN2
Emitter-base bandgap grading, the grid of the second NMOS tube MN2 connects the drain electrode of the first NMOS tube MN1, the source ground of the second NMOS tube MN2；Three or three
The base stage of pole pipe Q3 connects the tie point of second resistance R2 and 3rd resistor R3, and base stage and the colelctor electrode of the 3rd triode Q3 are interconnected,
Its emitter stage is grounded after the 4th resistance R4；The drain electrode of the 3rd PMOS MP3 is grounded after the 5th resistance R5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610395406.3A CN105955392B (en) | 2016-06-06 | 2016-06-06 | Band-gap reference voltage source with base current compensation characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610395406.3A CN105955392B (en) | 2016-06-06 | 2016-06-06 | Band-gap reference voltage source with base current compensation characteristic |
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| Publication Number | Publication Date |
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| CN105955392A CN105955392A (en) | 2016-09-21 |
| CN105955392B true CN105955392B (en) | 2017-05-10 |
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| CN201610395406.3A Expired - Fee Related CN105955392B (en) | 2016-06-06 | 2016-06-06 | Band-gap reference voltage source with base current compensation characteristic |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111427406B (en) * | 2019-01-10 | 2021-09-07 | 中芯国际集成电路制造(上海)有限公司 | Band gap reference circuit |
| CN112394766B (en) * | 2019-08-19 | 2022-07-12 | 圣邦微电子（北京）股份有限公司 | CMOS low-voltage band-gap reference voltage source capable of reducing power consumption and improving precision under low voltage |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5245273A (en) * | 1991-10-30 | 1993-09-14 | Motorola, Inc. | Bandgap voltage reference circuit |
| JPH09120317A (en) * | 1995-10-24 | 1997-05-06 | Advantest Corp | High-precision constant current source circuit |
| CN101788835B (en) * | 2010-03-19 | 2011-12-21 | 中国人民解放军国防科学技术大学 | Band-gap reference source for realizing curvature correction through self-adaptive base current compensation |
| US8970301B2 (en) * | 2013-05-20 | 2015-03-03 | Analog Devices, Inc. | Method for low power low noise input bias current compensation |
| CN103760944B (en) * | 2014-02-10 | 2016-04-06 | 绍兴光大芯业微电子有限公司 | Realize base current compensation without amplifier internal electric source structure |
| CN204331532U (en) * | 2014-12-10 | 2015-05-13 | 中国电子科技集团公司第四十七研究所 | Band-gap reference source circuit and base current compensation circuit thereof |
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- 2016-06-06 CN CN201610395406.3A patent/CN105955392B/en not_active Expired - Fee Related
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| CN105955392A (en) | 2016-09-21 |
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