CN105940143A - Gas confiner assembly for eliminating shadow frame - Google Patents

Gas confiner assembly for eliminating shadow frame Download PDF

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Publication number
CN105940143A
CN105940143A CN201580006247.7A CN201580006247A CN105940143A CN 105940143 A CN105940143 A CN 105940143A CN 201580006247 A CN201580006247 A CN 201580006247A CN 105940143 A CN105940143 A CN 105940143A
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China
Prior art keywords
substrate
gas
gas limiter
limiter
assembly
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Granted
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CN201580006247.7A
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Chinese (zh)
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CN105940143B (en
Inventor
赵来
王群华
R·L·迪纳
崔寿永
B·S·朴
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.

Description

For eliminating the gas limiter assembly of shadow frame
The background of the disclosure
Technical field
Embodiment of the present disclosure relate generally to a kind of gas limiter assembly for making distributing homogeneity improve with And the method for distributing gas in the processing chamber.
Background technology
Liquid crystal display or flat board are typically used in Active Matrix Display, such as computer and television monitor.One As using plasma strengthen chemical gaseous phase deposition (PECVD) at substrate (such as flat faced display or partly lead The transparent substrates of body wafer) on deposit thin film.General by by precursor gas or admixture of gas (such as, silane (SiH4) and nitrogen (N2)) introduce to accommodate in the vacuum chamber of substrate and realize PECVD.Precursor gas or gas Body mixture is the most guided downward with by being positioned at the distribution grid near chamber roof.By from being couple to the one of chamber Or radio frequency (RF) power is applied to chamber by multiple RF source, precursor gas or admixture of gas in chamber are excited (such as excitation) becomes plasma.Gas or the admixture of gas of excited target react, in order to be positioned at temperature Material (such as, silicon nitride (SiN is formed on the surface of the controlled substrate on substrate supportx)) layer.Nitridation Silicon layer is formed in thin film transistor (TFT) (TFT) of future generation and active matrix organic light-emitting diode (AMOLED) Passivation layer, gate insulator, cushion and/or the etching stopping layer of low temperature polycrystalline silicon (LTPS) membrane stack.TFT It is the two types device for forming flat faced display with AMOLED.
The flat board processed by PECVD technique is the biggest, often exceeds 4 square metres.Due at flat faced display In industry, substrate size sustainable growth, film thickness and film uniformity to large area PECVD control to become problem. Shadow frame affects from plasma for protective substrate support member the most in pecvd.But, owing to covering Framework covers substrate outermost edge, therefore these shadow frame: (1) makes edge exclusion (edge exclusion, EE) Increase 3mm to 5mm；And the film deposition near (2) adverse effect substrate periphery/marginal area.One makes limit The mode that edge uniformity is improved is to eliminate shadow frame.But, eliminate shadow frame and also can make the week of substrate Edge regions is exposed under plasma, and this may be due to the skew between substrate and unlapped substrate Higher deposition rate is caused at substrate edge region.If additionally, substrate is exposed under plasma, May result in the plasma starting the arc and uneven deposition.
Accordingly, it would be desirable to improve sedimentation rate in a substrate and film distributing homogeneity.
Summary of the invention
The disclosure relates generally to a kind of gas limiter assembly, and described gas limiter assembly is designed to limit Air-flow and change that the local air flow distribution near substrate edge region reduces in substrate edge region higher heavy Long-pending speed.Material, size, shape and other features of described gas limiter assembly can require and phase based on processing Association sedimentation rate and change.
In one embodiment, a kind of gas limiter assembly for processing chamber includes gas limiter, described Gas limiter be configured to the air-flow that reduces in substrate edge region and compensate in substrate edge region higher heavy Long-pending speed.Described gas limiter assembly also includes that covering, described covering are arranged on below described gas limiter. Described covering is configured to prevent substrate support to be exposed under plasma.
Accompanying drawing explanation
Therefore, in order to the features described above structure of the disclosure used by mode, the basis that above summarized are understood in detail Disclosed in more specifically describe and be referred to embodiment and carry out, some in embodiment are shown in the drawings.But, It should be noted that, accompanying drawing only illustrates the exemplary embodiment of the disclosure, and therefore it is not construed as limiting the model of the disclosure Enclose, because the disclosure can allow other equivalent implementations.
Fig. 1 is the schematic sectional view of an embodiment of the PECVD chamber with gas limiter assembly.
Fig. 2 is the plane graph of an embodiment of the gas limiter assembly of the substrate support surrounding Fig. 1.
Fig. 3 is the side cross-sectional view of an embodiment of conventional shadow frame assembly.
Fig. 4 is the side cross-sectional view of an embodiment of gas limiter assembly.
Fig. 5 is the isometric view of an embodiment of gas limiter assembly.
In order to promote to understand, use the similar elements that the similar elements symbol each figure of appointment is common the most as far as possible.It is envisioned that Arriving, the key element of an embodiment and feature can be advantageously incorporated into other embodiments, and without being further discussed below.
Detailed description of the invention
The disclosure relates generally to a kind of gas limiter assembly, and described gas limiter assembly is designed to gas Stream gravity new distributing reduces the higher deposition rate in substrate edge region.According to embodiment described herein, gas limits Device processed by limit air-flow and change near substrate edge region local air flow distribution reduce uneven deposition Speed.The material of gas limiter assembly, size, shape and other features can require based on process and be associated Sedimentation rate and change.
Embodiment herein (such as may be used hereinafter with reference to the PECVD system being configured to process large-area substrates From Applied Materials of Santa Clara city (Applied Materials, Inc., Santa Clara, California) PECVD system that subsidiary AKT buys) illustratively describe.It will be appreciated, however, that The disclosure has for other system configuration, and such as etch system, other chemical gas-phase deposition systems and expectation are by gas It is distributed in any other system processed in chamber, including being configured to process those systems of circular substrate.
Fig. 1 is of the PECVD chamber 100 for forming electronic device (such as TFT and AMOLED) The schematic sectional view of embodiment.Set it should be noted that, Fig. 1 only can be used for the exemplary of the electronic device on substrate Standby.A kind of suitable PECVD chamber can be buied from being positioned at Applied Materials of Santa Clara city.Should It is envisioned that other deposition chambers (including those deposition chambers from other manufacturers) can be used for putting into practice the disclosure.
Chamber 100 generally comprises wall 102, bottom 104 and gas distribution grid or bubbler 110 and substrate support 130, they limit process volume 106.In one embodiment, substrate support 130 is made of aluminum.Technique The salable slit valve 108 that volume 106 is formed by running through wall 102 passes in and out so that substrate 105 is transmittable everywhere Manage in chamber 100 or be sent to process outside chamber 100.In one embodiment, substrate 105 is 1850mm x 1500mm.Substrate support 130 includes substrate 132 and bar 134, described substrate 132 For supporting substrate 105, and described bar 134 is coupled to jacking system 136 to raise and to reduce substrate support 130。
Gas limiter assembly 129 is arranged around substrate support 130 periphery.Gas limiter assembly 129 is configured Become to reduce the higher deposition rate on the marginal area of substrate 140.In one embodiment, gas limiter group Part 129 includes substrate 131, covering 133 and gas limiter 135.Substrate 131 is configured to support gas limit Device 135 processed, and covering 133 is configured to when substrate 140 is arranged on substrate support 130 during processing Time upper, covered described substrate support 130, i.e. prevent substrate support 130 to be exposed under plasma.One In individual embodiment, when being in treatment temperature (such as 400 degrees Celsius), covering 133 is overlapping with substrate 140 10mm or 5mm.Even if substrate 140 and substrate support 130 misalignment, covering 133 is the most advantageously Protective substrate support member 130 affects from plasma.The details of gas limiter assembly 129 is discussed below.
Lifter pin 138 is moveably disposed through substrate support 130 to move base to from substrate 132 Plate 140, thus promote substrate transmission.Substrate support 130 may also include heating and/or cooling element 139, to incite somebody to action Substrate support 130 and be positioned at substrate 140 thereon and be maintained in preferred temperature.Substrate support 130 may also include Ground-strips 142, with substrate support 130 peripheral offer RF ground connection.
Bubbler 110 is couple to backboard 112 by suspension 114 in its periphery.Bubbler 110 also can be by one or many Individual center support 116 is couple to backboard 112, to contribute to preventing sagging (sag) and/or controlling bubbler 110 Straight degree/curvature.Source of the gas 120 is coupled to backboard 112, to provide shape by backboard 112 by one or more gas Become the multiple gas passages 111 in bubbler 110 and substrate 132 is provided to.Suitable gas can wrap Include but be not limited to: silicon-containing gas (such as, silane (SiH4)), nitrogenous gas (such as, nitrogen (N2), oxygen Change nitrogen (N2And/or ammonia (NH O)3)), oxygen-containing gas (such as, oxygen (O2)) and argon (Ar). Vacuum pump 109 is couple to process chamber 100 to control the pressure in process volume 106.RF power source 122 couples To backboard 112 and/or bubbler 110 RF power to be provided bubbler 110, thus at bubbler 110 and base Electric field is produced so that can be from the gas being present between bubbler 110 and substrate support 130 between plate support 130 Body forms plasma.Multiple RF frequency, the frequency between all such as from about 0.3MHz and about 200MHz can be used. In one embodiment, RF power source 122 provides power with the frequency of 13.56MHz to bubbler 110.
Remote plasma source 124 (remote plasma source of such as inductive) also can be coupled in source of the gas 120 with Between backboard 112.Processing substrate interprocedual, cleaning gas can provide remote plasma source 124 and be energized Form remote plasma, can generate and provide (dissociated) cleaning gas that dissociates from described remote plasma Material is to clean chamber part.Cleaning gas can be encouraged by RF power source 122 further and provide to flow through diffusion Device 110, thus reduce dissociate cleaning gaseous matter in conjunction with.Suitable cleaning gas is including, but not limited to NF3、 F2And SF6。
In one embodiment, during below about 400 degrees Celsius or the deposition of lower temperature, available heating and / or cooling element 139 maintain substrate support 130 and the temperature of substrate thereon 140.An embodiment party In formula, heating and/or cooling element 139 can be used for being controlled by substrate temperature to less than about 100 degrees Celsius, and such as 20 Degree Celsius and about 90 degrees Celsius between.
During deposition, at top surface and the end of bubbler 110 of the substrate 140 being arranged in substrate 132 Spacing between surface 150 can be between about 400mm and about 1200mm, such as at about 400mm and about 800 Between mm, such as between about 400mm and about 600mm, e.g., from about 500mm.In one embodiment, The basal surface 150 of bubbler 110 can include concave curvatures, and wherein central area is thinner than its outer peripheral areas.
Process chamber 100 can be used to come by pecvd process deposited amorphous silicon (aSi), nitride (such as, nitrogen SiClx (SiNx)) and/or oxide (such as, silicon oxide (SiOx)), above-mentioned every be widely used as TFT and Passivation layer, gate insulator film, cushion or etching stopping layer in AMOLED.The non-crystalline silicon of deposition, nitridation (such as, threshold voltage and drain current are equal to resulting devices performance for the uniformity (that is, thickness) of thing or oxide skin(coating) Even property) there is appreciable impact.In one embodiment, it is desirable to across substrate surface about 5% or less film uniform Property and 10mm EE (and unconventional 15mm EE).Although making many effort towards this target, but deposit Region in the unrealized this uniformity of substrate 140.Such as, the sedimentation rate that substrate edges experience is higher or lower, This can cause the film thickness in these regions more than or less than other regions.While not wishing to be bound by theory, but with wait from Daughter drives technique contrary, and the reason of the higher deposition rate in edge region is air stream drives technique.The present invention Gas limiter assembly developed and tested, in order to overcome these to affect and minimize the marginal area at substrate 140 On the inhomogeneities of film.
Fig. 2 is around substrate support 130 and (for the sake of clarity, removes gas limiter substrate 131 and gas limit Device 135 processed) the plane graph of an embodiment of covering 133 of gas limiter assembly 129.With reference to Fig. 1 And Fig. 2, gas limiter assembly 129 is configured to limit air-flow and change the marginal zone by being deposited on substrate 140 The local distribution of the air-flow on territory.In one embodiment, the uniform distribution on a large scale of substrate 140 is not being affected In the case of, gas limiter assembly 129 reduces the higher deposition rate of the edge at substrate 140.
Fig. 3 is the side cross-sectional view of an embodiment of conventional shadow frame assembly.Shadow frame 310 and substrate The peripheral edge of 140 is overlapping, and described substrate 140 is arranged on substrate support 130.During PECVD processes, Shadow frame 310 provides the advantage that protective substrate support member 130 affects from plasma.But, shadow frame The shortcoming of 310 includes that it is covered in the peripheral edge of substrate 140, thus increases edge exclusion and prevents or restricting substrate Film deposition in the outer peripheral areas of 140, thus cause the edge uniformity reduced.Remove shadow frame 310 also because of mistake Measure plasma-deposited on the peripheral edge of substrate 140 cause deposition uneven at periphery and may etc. from Daughter electric arc.
Fig. 4 is the side cross-sectional view of an embodiment of gas limiter assembly 129, and this embodiment solves to close Many consider in the shadow frame shown in Fig. 3 and remove of both shadow frame.Gas limiter 135 is arranged In substrate 131, described substrate 131 is arranged on again on substrate support 130.Covering 133 is arranged on substrate and props up In support member 130, and prevent the deposition on substrate support 130.Gas limiter 135 is arranged on covering 133 With in substrate 131, and arrange around substrate 140 is peripheral.Fig. 5 is an enforcement of gas limiter assembly 129 The isometric view of mode.Gas limiter 135 is around the peripheral location of substrate 140.At gas limiter 135 and substrate Gap 137 is there is between 140.The covering 133 supported by substrate support 130 is arranged on below gap 137, And protective substrate support member 130 is in case depositing.
Gas limiter assembly 129 is made up of nonmetal or glass.Such as, gas limiter assembly 129 can be by pottery (such as aluminium oxide (Al2O3)) make.Substrate 131 is arranged on substrate support 130, and a reality Execute in mode, substrate 131 include one or more pottery button (button) (not shown), described one or more Pottery button is arranged on the side of substrate 131 and is configured to the substrate in the face of substrate support 130 132.Pottery button can reduce and the thermally contacting and Mechanical Contact of substrate support 130.Gas limiter 135 warp It is couple to substrate support 130 by the substrate 131 being arranged on substrate support 130.In one embodiment, Substrate 131 includes that one or more alignment pin 202 is directed at for gas limiter 135.
Covering 133 is couple to substrate support 130 and between substrate 131 and gas limiter 135.Cover Part 133 is configured so that: even if substrate 140 and substrate support 130 misalignment, substrate support 130 exists Also it is not exposed under plasma during process.In one embodiment, covering 133 is included in intersection or connects 206 one or more ceramic wafer 200 linked at conjunction.Ceramic wafer 200 is positioned at the top peripheral limit of substrate support 130 On, and it is arranged on below the neighboring of substrate 140 (as shown in fig. 1).The alignment pin of one or more trough of belt 202 and standing screw 204 be used for making ceramic wafer 200 connected to each other to form covering 133.Due to substrate support The thermal expansion of 130 materials (such as, aluminum) and the difference of the thermal expansion of ceramic wafer 200, alignment pin 202 He of trough of belt Standing screw 204 prevents ceramic wafer 200 from opening at joint 206.For the hole of alignment pin 202 center be used for Distance between the center in the hole of standing screw 204 is defined as " X ".Distance X may be selected to allow substrate support 130 ratio ceramic wafer 200 thermal expansions more, still prevent ceramic wafer 200 from forming larger gap at joint 206 simultaneously. Even when with treatment temperature (such as 400 degrees Celsius) thermal expansion, this advantageously prevents substrate support 130 from exposing Under plasma.
Referring back to Fig. 1, gas limiter 135 have between about 1mm to about 9mm (e.g., from about 3mm or About 6mm) thickness, and there is the width of (such as, about 50mm) between about 25mm to about 75mm. Gap 137 may be formed between the edge of substrate 140 and gas limiter 135.In one embodiment, gap 137 between about 1mm to about 5mm, e.g., from about 2mm (or about 5mm to about 6 under 400 degrees Celsius mm).Those skilled in the art is it will be recognized that can select based on flowing gas and expected compensation gas flow rate The above-mentioned material of gas limiter assembly 129 and measured value more specifically gas limiter 135 and gap 137 Measured value.
Advantageously, the embodiment of gas limiter assembly 129 as described herein reduces air-flow and compensates substrate limit Higher deposition rate on edge region.Gas limiter 129 is by pushing back gas under the height of gas limiter 135 Side upwardly moving gas change the local air flow below gas limiter 135.Therefore, reduce local gas to divide Cloth, and thus also reduce local plasma density and sedimentation rate.Thus, overall film thickness is improved uniform Property, and especially true at the marginal area of 50mm or less EE.
Although the disclosure is to be described for a kind of gas limiter assembly, but it is contemplated that, other stop configuration Can be extended to process chamber hardware.Such as, adoptable mode is as follows: shadow frame thickness is increased or decreased or by thickness Degree gradient introduces existing shadow frame and compensates the effect using shadow frame.
The overall uniformity of the substrate being similar to substrate 140 has been carried out test, and the gas limiter of the present invention Assembly illustrates following beneficial outcomes: (1), for amorphous silicon deposition, has the gas limiter of the thickness of about 6mm Standardization DR scope is improved to 4.5% from 6.8%, in the scope of the 10mm to 50mm of edge, tool There is the possible uniformity (potential uniformity) of 2.3%, and at 10mm EE, overall is uniform Property is improved to 3.8% from 6.0%；(2) for high DR silicon nitride, the gas of the thickness with about 6mm limits Standardization DR scope is improved to 4.1% from 9.5% by device, has the possible uniformity of 2.1%, and at 10mm At EE, overall uniformity is improved to 3.6% from 4.3%；(3) for high DR silicon oxide, there is about 6mm The gas limiter of thickness standardization DR scope is improved to 2.5% from 8.5%, have 1.3% possible equal Even property, and overall uniformity is improved to 4.8% from 6.2%；(4) for low DR silicon nitride, there is about 3mm The gas limiter of thickness standardization DR scope is improved to 9.7% from 14.4%, have 4.8% possible equal Even property, and overall uniformity is improved to 7.7% from 12.9%；And (5) are for low DR silicon oxide, have Standardization DR scope is improved to 1.1% from 6.3% by the gas limiter of the thickness of about 6mm, has 0.6% Possible uniformity, and overall uniformity is improved to 6.8% from 7.4%.
Although foregoing is for embodiment of the present disclosure, but also can be in the situation of the elemental range without departing from the disclosure Other and further embodiment of the lower design disclosure, and the scope of the present disclosure is to be come really by following claims Fixed.

Claims (15)

1., for processing a gas limiter assembly for chamber, described gas limiter assembly includes:
Gas limiter, described gas limiter is configured to arrange around substrate；And
Covering, described covering be arranged on below described gas limiter and described gas limiter with join It is set to be provided with between the position of described substrate.
Gas limiter assembly the most according to claim 1, it farther includes substrate, and described substrate is arranged on Below described gas limiter.
Gas limiter assembly the most according to claim 2, it is characterised in that described substrate includes one or more Pottery button, one or more pottery button described is oriented in the face of being arranged on the base below described substrate Plate support.
Gas limiter assembly the most according to claim 2, it is characterised in that described substrate includes one or more Alignment pin, one or more alignment pin described is configured to be directed at described substrate with described gas limiter.
Gas limiter assembly the most according to claim 2, it is characterised in that described substrate comprises aluminium oxide.
Gas limiter assembly the most according to claim 1, it is characterised in that described covering be included in one or One or more ceramic wafer that multiple intersections link, wherein said ceramic wafer includes one or more pin or screw rod, One or more pin described or screw rod are configured to link one or more pottery described in one or more intersection described Plate.
7. according to the gas limiter assembly that claim 1 is described, it is characterised in that described gas limiter and institute State covering and comprise aluminium oxide.
8. processing a chamber, described process chamber includes:
Bubbler；
Substrate support, described substrate support is positioned to the most relatively support substrate with described bubbler； And
Gas limiter assembly, described gas limiter assembly includes:
Gas limiter, described gas limiter is configured to arrange around described substrate；And
Covering, described covering is arranged on below described gas limiter and above described substrate support.
Process chamber the most according to claim 8, it is characterised in that described gas limiter and described covering Comprise aluminium oxide.
Process chamber the most according to claim 8, it is characterised in that described gas limiter has at about 1mm And the thickness between about 9mm.
11. process chambers according to claim 8, it is characterised in that described covering is included in one or more phase One or more ceramic wafer linked at friendship, wherein said ceramic wafer includes that one or more is sold or screw rod, described one Or multiple pin or screw rod are configured to link one or more ceramic wafer described in one or more intersection described.
12. process chambers according to claim 8, it farther includes substrate, and described substrate is arranged on described gas Below body limiter.
13. process chambers according to claim 12, it is characterised in that described substrate includes one or more pottery button Shape thing, one or more pottery button described is oriented in the face of being arranged on the substrate support below described substrate Part.
14. process chambers according to claim 12, it is characterised in that described substrate includes one or more alignment pin, One or more alignment pin described is configured to be directed at described substrate with described gas limiter.
15. process chambers according to claim 12, it is characterised in that described substrate comprises aluminium oxide.
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