JP2020501364A - Substrate transfer device - Google Patents

Abstract

In one embodiment, a substrate transport apparatus is provided that includes a substrate support having an outer perimeter, a plurality of central support members disposed outside the outer perimeter, and an edge support member disposed on opposing sides of the substrate support. Is done. [Selection diagram] FIG. 1A

Description

[0001] Embodiments of the present disclosure generally relate to methods and apparatus for transporting a substrate, such as a solar panel substrate, flat panel substrate, or semiconductor substrate, to and from a susceptor or substrate support.

Description of the Related Art [0002] In the manufacture of solar panels and flat panel displays, substrates such as semiconductor substrates, solar panel substrates, liquid crystal displays (LCD), and light emitting diode (LCD) and / or organic light emitting diode (OLED) substrates. Many processes for depositing a thin film on a substrate and forming an electronic device on the substrate have been adopted. Typically, deposition is performed by introducing a precursor gas into a vacuum chamber having a substrate disposed on a temperature controlled substrate support. The precursor gas is typically directed through a gas distribution plate located near the top of the vacuum chamber. By applying RF power to the chamber from one or more radio frequency (RF) power supplies coupled to the chamber, the precursor gas in the vacuum chamber is energized (eg, excited) into a plasma. sell. The excited gas reacts to form a layer of material on the surface of the substrate disposed on the temperature-controlled substrate support.

[0003] The size of a substrate for forming an electronic device is typically greater than one square meter, and the size of a substrate support is approximately the same or slightly larger than its surface area. Typically, the substrate support includes a plurality of lift pins disposed on or through the substrate support to facilitate transfer of the substrate to and from the surface of the substrate support. Used to For example, lift pins are utilized to separate the substrate from the support surface of the substrate support so that a robot blade or end effector can pass therebetween. Each lift pin typically has a lift pin head located in a recessed pocket in the substrate support. The presence of the lift pin head on the substrate support magnifies the temperature difference across the substrate support and / or the radio frequency (RF) coupling difference across the substrate support. For example, the position of the lift pins can cause nearby substrate portions to cool more than other areas of the substrate. In another embodiment, the location of the lift pins may cause the substrate portion in the vicinity to be at a lower ground potential and change the plasma coupling conditions.

[0004] In general, uniformity is required for a thin film disposed on a substrate. For example, an amorphous silicon film such as a microcrystalline silicon film or a polycrystalline silicon film is usually disposed on a substrate to form a PN junction required for a transistor or a solar cell. The quality and uniformity of an amorphous silicon film and a polycrystalline silicon film are important for commercial operation, like the metal oxide film. One or both of the temperature non-uniformity and the RF coupling non-uniformity can change the properties of the film deposited on the substrate and cause non-uniform deposition. In addition, the lift pins can scratch or damage the surface of the substrate while the substrate is in contact.

[0005] Accordingly, there is a need for a substrate support that minimizes film non-uniformity and / or damage.

[0006] Embodiments of the present disclosure generally relate to systems and apparatus for processing semiconductor substrates. In one embodiment, a substrate includes a substrate support having an outer periphery, a plurality of central support members disposed outside the outer periphery, and an edge support member disposed on opposing sides of the substrate support. A transport device is provided.

[0007] In another embodiment, a plasma processing system is described. The plasma processing system includes a chamber, a substrate support having an outer periphery disposed in the chamber, and a substrate transfer device disposed in the chamber. The substrate transfer device includes a plurality of central support members disposed outside the outer periphery, and an edge support member disposed on opposite sides of the substrate support.

[0008] In another embodiment, a method for transferring a substrate to a substrate receiving surface of a substrate support is described. The method includes providing a substrate to a chamber, using one or more central support members to support the substrate at a center thereof, and using an edge support member to support the substrate at two opposite edges thereof. Supporting, rotating one or more central support members around the periphery of the substrate support, and lowering two opposing edges of the substrate toward the substrate receiving surface.

[0009] In order that the foregoing features of the disclosure may be better understood, a more particular description of the disclosure, briefly summarized above, may be obtained by reference to embodiments. Some of the embodiments are illustrated in the accompanying drawings. However, the accompanying drawings illustrate only exemplary embodiments of this disclosure, as the present disclosure is capable of other equally valid embodiments, and thus should not be viewed as limiting the scope of the present disclosure. Note that there is no.

1 is a schematic cross-sectional view of a plasma processing system having one embodiment of a substrate transfer device. 1B shows a state in which the substrate transfer device of FIG. 1A is stored. A substrate is placed on a substrate receiving surface of a substrate support for processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is one embodiment of the substrate transfer apparatus showing one embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. It is another embodiment of the substrate transfer apparatus showing another embodiment of the substrate transfer processing. FIG. 4 is an isometric plan view of a substrate support having edge support members disposed on opposing sides of the substrate support. FIG. 16B is an isometric view of a portion of the substrate support shown in FIG. 16A. FIG. 5 is a partial cross-sectional side view of a substrate support and an edge support member disposed thereon.

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and / or steps of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0018] Embodiments of the present disclosure generally relate to a method and apparatus for transferring a substrate to and from a substrate support without using conventional lift pins. In the following description, reference is made to a plasma enhanced chemical vapor deposition (PECVD) chamber for forming a film on a large area substrate, but the embodiments described herein use physical vapor deposition, to name a few. Other chambers may be implemented, such as a deposition (PVD) chamber, an etching chamber, a semiconductor wafer processing chamber, a solar cell processing chamber, an organic light emitting display (OLED) processing chamber, and the like. Suitable chambers that can be used are Applied Materials, Inc. of Santa Clara, California, USA. AKT America, Inc., a subsidiary of Available from It should be understood that the embodiments described herein may be practiced with chambers available from other manufacturers.

[0019] Embodiments of the present disclosure are generally used for processing rectangular substrates, such as substrates for liquid crystal displays or flat panels, and substrates for solar panels. Other suitable substrates may be circular, such as a semiconductor substrate. However, the present disclosure includes a substrate having about the 90,000cm ² (or greater than this) area is particularly advantageous in a substrate having an area of about 15,600cm ^2.

FIG. 1A is a schematic cross-sectional view of one embodiment of a plasma processing system 100. Plasma processing system 100 processes large area substrates 105 using plasma and is used to manufacture photovoltaic cells for liquid crystal displays (LCDs), flat panel displays, organic light emitting diodes (OLEDs), or solar cell arrays. The structure and the device to be formed are formed on the large-area substrate 105. Substrate 105 may be a thin plate of metal, plastic, organic material, silicon, glass, quartz, or other suitable material such as a polymer material. Substrate 105 may have an area greater than about 1 square meter, for example, an area greater than about 2 square meters. In other embodiments, the substrate 105 may include an area of about 15,600 cm ² or more, for example, about 90,000 cm ² (or more). The structure can be a thin film transistor, which can include multiple sequential deposition and masking steps. Other structures may include a PN junction to form a diode for the photovoltaic cell.

[0021] The plasma processing system 100 includes, but is not limited to, a dielectric material (e.g., SiO2, SiOxNy, a derivative thereof or a combination thereof), a semiconductor material (e.g., Si and its dopant), a barrier material (e.g., , SiNx, SiOxNy or derivatives thereof) can be configured to deposit on the large area substrate 105. Specific examples of dielectric and semiconductor materials formed or deposited on large area substrates by plasma processing system 100 include epitaxial silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, silicon germanium, germanium, silicon dioxide. , Silicon oxynitride, silicon nitride, their dopants (eg, B, P, or As), their derivatives, or combinations thereof, and the like. The plasma processing system 100 may also provide a gas such as argon, hydrogen, nitrogen, helium, or a combination thereof with a purge gas or carrier gas (eg, Ar, H ₂ , N ₂ , He, derivatives thereof, or combinations thereof). It is configured to accept as. One embodiment of depositing a thin silicon film on a large area substrate 105 using the system 100 can be achieved by using silane as a process gas in a hydrogen carrier gas.

As shown in FIG. 1A, the plasma processing system 100 generally includes a chamber body 110 that includes a bottom 115 and sidewalls 120 that at least partially define a processing space 125. The substrate support 130 is disposed in the processing space 125. The substrate support 130 may be an actuator adapted to move the substrate support at least vertically and / or adjust a distance between the substrate 105 and the showerhead assembly 140 to facilitate transport of the substrate 105. 135. Substrate support 130 is adapted to support substrate 105 on substrate receiving surface 145 during processing.

[0023] The plasma processing system 100 includes a substrate transport device 150 adapted to raise or lower the substrate 105 from the substrate receiving surface 145 of the substrate support 130. In FIG. 1A, the substrate 105 is shown lifted from the substrate receiving surface 145 by the substrate transfer device 150. The space between the back surface 155 of the substrate 105 and the substrate receiving surface 145 of the substrate support 130 is provided so that a conventional robot or end effector (both not shown) may pass therethrough. When the substrate transfer device 150 is at the position shown in FIG. 1A, the substrate 105 can be transferred into and out of the chamber body 110 through the transfer port 160.

FIG. 1B shows the stored substrate transport device 150, with the substrate 105 placed on a substrate receiving surface 145 for processing. Substrate transport device 150 may include a plurality of support members adapted to contact back surface 155 of substrate 105. The plurality of support members may include an edge support member 162 (only one is shown in FIGS. 1A and 1B) and a central support member 164. Edge support member 162 may be utilized to contact and support the edge of substrate 105. The central support member 164 may be utilized to contact and support an area of the substrate 105 inside the edge of the substrate 105. The edge support member 162 and the center support member 164 are adapted to move laterally and / or rotationally (within the XY plane) with respect to the substrate support 130. Edge support member 162 and center support member 164 are adapted to move vertically (in the Z direction) with respect to substrate support 130.

[0025] The edge support member 162 may be coupled to the first actuator 166. Edge support member 162 may be connected to first actuator 166 by support shaft 165. The support shaft 165 may be located outside the outer periphery of the substrate support 130, as shown in some embodiments. In other embodiments, the support shaft 165 may be alternatively or additionally arranged such that the support shaft 165 passes through the substrate support 130. The central support member 164 may be connected to a support shaft 167 disposed outside the outer periphery of the substrate support 130.

[0026] The central support member 164 may be coupled to a second actuator 168. Each of the first actuators 166 may be a linear drive adapted to move the edge support member 162 in a vertical direction (Z direction). Each of the second actuators 168 includes a linear and rotary drive adapted to move the central support member 164 up and down (in the Z direction) and to accommodate movement of the central support member 164 in the XY plane. It may be.

[0027] In operation, the showerhead assembly 140 is configured to supply a processing gas from the processing gas source 170 to the processing space 125. Plasma processing system 100 also includes an exhaust system 172 configured to apply a negative pressure to processing space 125. Showerhead assembly 140 is generally positioned to face substrate support 130 in a substantially parallel relationship.

[0028] The showerhead assembly 140 includes a gas distribution plate 174 and a backing plate 176. The backing plate 176 may function as a shielding plate that allows a gas space to be formed between the gas distribution plate 174 and the backing plate 176. Gas source 170 is connected to gas distribution plate 174 by conduit 178. In one embodiment, the remote plasma source 180 is coupled to a conduit 178 for supplying a plasma of the activated gas to the processing space 125 via the gas distribution plate 174. The plasma from the remote plasma source 180 may include an activated gas for cleaning chamber components located within the processing space 125. In one embodiment, the activated cleaning gas is flowed to processing space 125. Gases suitable for cleaning include carbon / fluorine containing gases such as fluorine (F ₂ ), nitrogen trifluoride (NF ₃ ), sulfur hexafluoride (SF ₆ ), and carbon fluoride (eg, octafluorotetrahydrofuran ( C ₄ F ₈ O), carbonyl fluoride _(COF 2), hexafluoroethane _{(C 2 F} 6), tetrafluoromethane _(CF 4), perfluoropropane _(C 3 F8)), as well as combinations thereof. Carbon and oxygen containing gases may also be used, but are not desirable due to possible contamination of carbon and / or oxygen.

[0029] The gas distribution plate 174, the backing plate 176, and the conduit 178 are generally formed from a conductive material and are in electrical communication with one another. The chamber main body 110 is also formed from a conductive metal material. The chamber body 110 is generally electrically isolated from the showerhead assembly 140. In one embodiment, showerhead assembly 140 is attached to chamber body 110 by insulator 182.

[0030] In one embodiment, the substrate support 130 is also made of a conductive material, and the substrate support 130 and the showerhead assembly 140 are configured to be opposing electrodes, during processing and / or during processing. During processing or post-processing, a plasma 184 of processing gas is generated between the two. Additionally, the substrate support 130 and the showerhead assembly 140 can be utilized to support a plasma of a cleaning gas during the cleaning process. The substrate support 130 may also be heated, such as by a resistive heating element (not shown), and / or a fluid channel (not shown) for circulating fluid to control the temperature of the disposed substrate. May be included.

[0031] A radio frequency (RF) power supply 186 is generally used to generate a plasma 184 between the showerhead assembly 140 and the substrate support 130 before, during, and after processing. In some implementations, substrate support 130 is at ground potential. The RF power source 186 may also be used to maintain the excited nuclides or to further excite the cleaning gas provided from the remote plasma source 180. The impedance matching circuit 188 may be connected between the power supply 186 and the showerhead assembly 140. In some embodiments, the frame member 190 (shown in FIG. 1B) may be located near the outer periphery of the substrate 105. Frame member 190 may be utilized to trap gas over substrate 105 during processing.

[0032] FIGS. 2A-8B are various views of a substrate transport apparatus 150 illustrating one embodiment of a substrate transport process. 2A, 3A, 4A, 5A, 6A, 7A, and 8A are top views of the substrate 105 and the substrate support 130, whereas FIGS. 2B, 3B, 4B, 5B, and 5 FIGS. 6B, 7B, and 8B are elevation views showing the process depicted in FIGS. 2A, 3A, 4A, 5A, 6A, 7A, and 8A.

FIGS. 2A and 2B show an end effector 200 having a plurality of fingers 205 that at least partially support a substrate 105 above a substrate support 130. The edge support member 162 can be used to support a side of the substrate 105, while the center support member 164 can be used to support an area of the substrate 105 inside the side of the substrate 105. Edge support member 162 and center support member 164 may include a ceramic material. The edge support member 162 and the center support member 164 may include, for example, Al ₂ O ₃ . The edge support member 162 and the center support member 164 that contact the substrate 105 may be Al ₂ O ₃ , anodized aluminum or graphite. The edge support member 162 may be used to support all four sides of the substrate 105 or only two sides of the substrate 105. Edge support member 162 is located outside finger 205 so as not to interfere with the operation of end effector 200. At least a portion of the central support member 164 may be offset (eg, L-shaped) so as not to interfere with the fingers 205 of the end effector 200.

[0034] The end effector 200 may transport the substrate 105 above the substrate support 130 shown in FIG. 2A. Thus, the edge support member 162 and the center support member 164 can be driven to the position shown in FIG. 2B.

FIG. 3A shows a state in which the end effector 200 of FIGS. 2A and 2B is retracted, and FIG. 3B shows an edge support member 162 and a center support member for supporting the substrate 105 above the substrate support 130. 164 is shown. As shown in FIG. 3B, the edge support member 162 and the center support member 164 may be lifted slightly from the substrate support 130 to remove the fingers 205 from the back side of the substrate 105 and prevent scratches. .

[0036] FIGS. 4A and 4B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 3B. In addition, the inner set 400 of the central support member 164 is rotated to a position outside the outer periphery of the substrate 105.

[0037] FIGS. 5A and 5B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 4B. The center of the substrate 105 is closer to the vicinity of the substrate support 130.

FIGS. 6A and 6B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 5B. In addition, the central set 600 of the central support member 164 has been rotated to a position outside the outer periphery of the substrate 105. The center of the substrate 105 is closer to the vicinity of the substrate support 130 as compared to the diagram shown in FIG. 5B.

FIGS. 7A and 7B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 6B. In addition, the outer set 700 of the central support member 164 has been rotated to a position outside the outer periphery of the substrate 105. The center of the substrate 105 is in contact with the substrate support 130. The sides of the substrate 105 remain supported by the edge support members 162, while the central support member 164 is rotated out of the periphery of the substrate 105.

[0040] FIGS. 8A and 8B show that the substrate 105 has been lowered onto the substrate support 130. FIG. This lowering is realized by lowering the edge support member 162 toward the substrate support 130. In some embodiments, the edge support member 162 is lowered along the edge of the substrate support 130 into the recess. In this embodiment, the edge support member 162 is disposed between the substrate 105 and the substrate support 130.

[0041] FIGS. 9A to 15B are various views of another embodiment of a substrate transfer apparatus 150 illustrating another embodiment of a substrate transfer process. 9A, 10A, 11A, 12A, 13A, 14A, and 15A are top views of the substrate 105 and the substrate support 130, while FIGS. 9B, 10B, 11B, 12B, and 12 FIGS. 13B, 14B, and 15B are elevation views showing the process depicted in FIGS. 9A, 10A, 11A, 12A, 13A, 14A, and 15A.

[0042] The substrate transport procedure is substantially similar to the embodiment shown in FIGS. 2A-8B, except for the center edge support member 900 between the center support member 164 and the edge support member 162. .

FIGS. 9A and 9B show an end effector 200 having a plurality of fingers 205 that at least partially support a substrate 105 above a substrate support 130. The edge support member 162 as well as the center edge support member 900 are utilized to support a side of the substrate 105, while the center support member 164 is used to support an area of the substrate 105 inside the side of the substrate 105. It can be used for The center edge support member 900 can include a ceramic material. Edge support member 162 is located outside finger 205 so as not to interfere with the operation of end effector 200. The center edge support member 900 is located between the fingers 205 so as not to interfere with the operation of the end effector 200.

FIG. 10A shows a state in which the end effector 200 of FIGS. 9A and 9B is retracted, and FIG. 10B shows an edge support member 162 and a central support member for supporting the substrate 105 above the substrate support 130. 164 is shown. As shown in FIG. 3B, the edge support member 162 and the center support member 164 may be lifted slightly from the substrate support 130 to remove the fingers 205 from the back side of the substrate 105 and prevent scratches. .

FIGS. 11A and 11B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 10B. In addition, the inner set 400 of the central support member 164 is rotated to a position outside the outer periphery of the substrate 105.

FIGS. 12A and 12B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 11B. The center of the substrate 105 is closer to the vicinity of the substrate support 130.

FIGS. 13A and 13B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 12B. In addition, the central set 600 of the central support member 164 has been rotated to a position outside the outer periphery of the substrate 105. The central portion of the substrate 105 is closer to the vicinity of the substrate support 130 as compared to the diagram shown in FIG. 12B.

[0048] FIGS. 14A and 14B show that the substrate 105 is descending toward the substrate support 130 as compared to the diagram shown in FIG. 13B. In addition, the outer set 700 of the central support member 164 has been rotated to a position outside the outer periphery of the substrate 105. The center of the substrate 105 is brought into contact with the substrate support 130. The sides of the substrate 105 remain supported by the edge support members 162, while the center of the center edge support member 900 and the substrate 105 are supported by the outer set of the central support members 164.

[0049] FIGS. 15A and 15B show that substrate 105 has been lowered onto substrate support 130. FIG. This lowering is achieved by lowering the edge support member 162 and the center edge support member 900 toward the substrate support 130. In addition, the outer set of central support members 164 has been rotated out of the outer periphery of the substrate 105.

FIG. 16A is an isometric plan view of substrate support 130 having edge support members 162 disposed on opposing sides of substrate support 130. In addition, the frame member 190 is shown above the substrate support 130. The center edge support member 900 is also shown disposed on the substrate support 130 on opposite sides of the substrate support 130. Also shown are ceramic strips 1600 disposed on opposing sides of the center edge support member 900. The edge support member 162 is configured to move to transport the substrate 105, but the ceramic strip 1600 may remain connected to the substrate support 130. In this configuration, the center edge support member 900 is not used. Ceramic strip 1600 may be one-piece (ie, not separated by center edge support member 900).

[0051] FIG. 16B is an isometric view of a portion of the substrate support 130 shown in FIG. 16A. The edge support member 162 and ceramic strip 1600 are shown disposed outside the outer perimeter 1605 of the substrate 105. Also shown is a recessed outer peripheral area 1610 of the substrate support 130 where the frame member 190 can be located.

[0052] FIG. 16C is a partial side cross-sectional view of the substrate support 130 and the edge support member 162 disposed thereon. The edge support member 162 (only one is shown in this figure) is adapted to be located in the recess 1615 below the substrate receiving surface 145 of the substrate support 130. Recess 1615 can be sized to receive the width of edge support member 162. Recess 1615 can also be sized to receive the thickness of edge support member 162 such that upper surface 1620 of edge support member 162 is substantially coplanar with upper surface 1625 of substrate 105. The frame member 190 is adapted to cover the upper surface 1620 of the edge support member 162 during processing, but is spaced from this position to show other components.

[0053] Also, an opening 1630 is shown in the outer peripheral region 1635 of the substrate support 130. Opening 1630 can receive support shaft 1640 and be sized to allow support shaft 1640 to pass therethrough. Although only one opening 1630 is shown in FIG. 16C, the outer peripheral region 1635 of the substrate support 130 can have another opening. The support shaft 1640 may be the support shaft 165 of the edge support member 162 and may be the support shaft of the center edge support member 900. The openings 1630 can be utilized to allow the respective support shafts 165 to contact the edge support members 162 and raise and lower the edge support members 162.

[0054] Embodiments of the substrate transport apparatus 150 provide a number of advantages as described herein. This advantage includes the removal of lift pins on the substrate support 130 as well as the lift pin pockets on the substrate support 130. The substrate receiving surface 145 of the substrate support 130 does not include any through-holes that reduce or eliminate cold spots on the substrate 105 (ie, are not drilled). The substrate edge supports (162 and 900) affect the film properties and have a minimum width so that the effect on RF coupling is minimized. Another advantage of the substrate transfer device 150 is that damage to the back surface of the substrate 105 is small. Lift pins that tend to scratch the substrate are removed, thereby minimizing or eliminating substrate scratches. The substrate transport device 150 removes the substrate from the center by gradually removing the center support member 164 from the center (as shown in FIGS. 2B-8B and 9B-15B). From the substrate to the edge of the substrate. Initial contact between the center of the substrate 105 and the substrate support 130 minimizes movement of the substrate 105 during the transfer operation. The substrate transport device 150 also functions to maintain the shape of the substrate 105 (eg, minimize deformation) to control the stress (eg, to less than about 100 MPa).

[0055] Although the above description is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the disclosure is determined by the following claims.

Claims (16)

A substrate support having an outer periphery,
A plurality of central support members disposed outside the outer periphery,
A substrate transfer device comprising:   The substrate transfer device according to claim 1, further comprising an edge support member disposed on opposite sides of the substrate support.   The substrate transport apparatus according to claim 1, wherein each of the center support members and each of the edge support members comprise a support shaft connected to an actuator.   4. The substrate transfer apparatus according to claim 3, wherein the actuator comprises a plurality of first actuators, each of the first actuators being coupled to a respective support shaft of the central support member.   The substrate transfer device according to claim 4, wherein each of the first actuators is a linear actuator and a rotary actuator.   The apparatus of claim 3, wherein the actuator comprises a plurality of second actuators, each of the second actuators being coupled to a respective support shaft of the edge support member.   The substrate transfer apparatus according to claim 6, wherein each of the plurality of second actuators is a linear actuator.   4. The substrate transfer apparatus according to claim 3, wherein each of the support shafts of the central support member is disposed outside the outer periphery of the substrate support.   4. The substrate transport apparatus according to claim 3, wherein each of the support shafts of the edge support member is disposed inside the outer periphery of the substrate support.   The substrate transfer device according to claim 1, wherein the substrate support includes a substrate receiving surface that is not perforated. A chamber;
A substrate support having an outer periphery disposed within the chamber;
A substrate transfer device disposed in the chamber, the substrate transfer device including a plurality of central support members disposed outside the outer periphery,
A plasma processing system comprising:   The plasma processing system according to claim 11, further comprising an edge support member disposed on opposite sides of the substrate support.   The plasma processing system of claim 11, wherein the substrate support includes a non-perforated substrate receiving surface.   The plasma processing system of claim 11, wherein each of the center support members and each of the edge support members comprise a support shaft coupled to an actuator.   15. The plasma processing system of claim 14, wherein the actuator comprises a plurality of first actuators, each of the first actuators coupled to a respective support shaft of the central support member. The plasma processing system according to claim 15, wherein each of the first actuators is a linear actuator and a rotary actuator.

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