TW201834123A - Substrate transfer device and plasma processing system and method using the same - Google Patents

Abstract

In one embodiment, a substrate transfer device is provided that includes a substrate support having a perimeter, a plurality of central support members positioned outside of the perimeter, and an edge support member positioned on opposing sides of the substrate support.

Description

Substrate transfer equipment

The embodiments disclosed in this disclosure generally relate to a method and apparatus for transferring and transferring a plurality of substrates to and from a base or a substrate support. The substrate is, for example, a solar panel substrate, a flat substrate, or a semiconductor substrate.

In manufacturing solar panels or flat panel displays, many processes are used to deposit thin films on substrates to form electronic devices thereon. The substrate is, for example, a semiconductor substrate, a solar panel substrate, and a liquid crystal display (LCD) and / or an organic light emitting diode (OLED) substrate. Deposition is generally accomplished by introducing a precursor gas into a vacuum chamber having a substrate disposed on a temperature-controlled substrate support. The precursor gas is generally guided through a gas distribution plate, which is located near the top of the vacuum chamber. By supplying RF power to the chamber from one or more radio frequency (RF) sources coupled to the chamber, the precursor gas in the vacuum chamber can be energized (excited, for example) into a plasma. The excited gas system reacts to form a material layer on the surface of the substrate on the temperature control substrate support.

The size of the substrate currently used to form the electronic device in the area routinely exceeds 1 square meter, and the substrate support is similarly sized or includes a slightly larger surface area. Generally, the substrate support includes a plurality of lifting pins disposed thereon or passing therethrough to facilitate substrate transfer to or from the surface of the substrate support. For example, lifting pins are used to separate the substrate from the surface of the substrate support, so a robot blade or end effector can pass therethrough. Each lifting pin has a lifting pin head, which is generally located in a recessed bag portion of the substrate support. The presence of the lifting pin head on the substrate support is to promote the temperature difference across the substrate support and / or the RF coupling deltas across the substrate support. For example, the location of the lifting pin may cause the portion of the substrate that is close to it to cool down compared to other areas of the substrate. In another example, the position of the lifting pin may cause the portion of the substrate close to it to have less ground potential, thereby changing the plasma coupling conditions.

Uniformity in a thin film deposited on a substrate is generally required. For example, an amorphous silicon film or a polycrystalline silicon film is usually deposited on a substrate to form a desired p-n junction in a transistor or a solar cell. The amorphous silicon film is, for example, a microcrystalline silicon film. The quality and uniformity of amorphous or polycrystalline silicon and metal oxide films are important for commercial operations. The non-uniformity of one or both of temperature and RF coupling may change the properties of the film deposited on the substrate, resulting in non-uniform deposition. In addition, the lifting pins may scratch or otherwise damage the surface of the substrate during contact with the surface of the substrate.

Therefore, there is a need for a substrate support that minimizes film non-uniformity and / or damage.

Several embodiments of the present disclosure generally relate to a method and apparatus for transferring a substrate. In one embodiment, a substrate transfer device is proposed. The substrate transfer device includes a substrate support having a circumference, a plurality of central support members located outside the circumference, and an edge support member located on the opposite side of the substrate support.

In another embodiment, a plasma processing system is described. The plasma processing system includes a chamber; a substrate support having a circumference and disposed in the chamber; and a substrate transfer device located in the chamber. The substrate transfer device includes a plurality of central support members, which are located on the outer side of the perimeter; and an edge support member, which is located on the opposite side of the substrate support.

In another embodiment, a method for transferring a substrate to a substrate receiving surface is described. The method includes providing a substrate in a chamber; supporting one or more central regions of the substrate with one or more central support members; supporting two opposite edges of the substrate with several edge support members; rotating the one or more central support members through A perimeter of the substrate support; and lowering the two opposite edges of the substrate toward the substrate receiving surface. In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:

Several embodiments of the present disclosure generally relate to methods and equipment for transferring a substrate to or from a substrate support without using a conventional lifting pin. In the following description, reference will be made to a plasma enhanced chemical vapor deposition (PECVD) chamber to form a film on a large-area substrate, but it will be understood that the Embodiments can also be implemented in other chambers. Other chambers include a physical vapor deposition (PVD) chamber, an etching chamber, a semiconductor wafer processing chamber, a solar cell processing chamber, and an organic light emitting display (OLED) processing chamber Here are a few examples. Suitable chambers that can be used can be obtained from AKT America, Inc., which is a US Applied Materials Technology Company based in Santa Clara, California. Ltd. (Applied Materials, Inc.). It will be understood that the embodiments discussed herein may also be implemented in chambers obtained from other manufacturers.

Several embodiments of this disclosure are generally used to process rectangular substrates, such as substrates for liquid crystal displays or flat panels, and substrates for solar panels. Other suitable substrates may be circular, such as semiconductor substrates. However, the present disclosure has advantages particularly on substrates having a planar surface area of about 15,600 cm ² and including substrates having a planar surface area of 90,000 cm ² (or greater).

FIG. 1A is a cross-sectional view of an embodiment of the plasma processing system 100. The plasma processing system 100 is assembled to process a large-area substrate 105 on a large-area substrate 105 using a plasma-forming structure or device for manufacturing liquid crystal displays, flat-panel displays, organic light emitting diodes, or for solar cells Array of photovoltaic cells. The substrate 105 may be a thin sheet of metal, plastic, organic material, silicon, glass, quartz, or other suitable materials. The substrate 105 may have a surface area greater than about 1 square meter, such as a surface area greater than 2 square meters. In other embodiments, the substrate 105 may include a planar surface area of about 15,600 cm ² or more, such as a planar surface area (or more) of about 90,000 cm ² . The structure may be a thin film transistor, and the thin film transistor may include several successive deposition and masking steps. Other structures may include pn junctions to form diodes for photovoltaic cells.

The plasma processing system 100 can be assembled to deposit several materials on a large-area substrate 105. Such materials include dielectric materials (such as SiO ₂ , SiO _x N _y , derivatives thereof, or combinations thereof), semiconductor materials (such as Si and its dopants), and barrier materials (such as SiN _x , SiO _x N _y or derivatives thereof), but not limited to these. Specific examples of dielectric materials and semiconductor materials formed or deposited on a large-area substrate by the plasma processing system 100 may include epitaxial silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, silicon germanium, germanium, silicon dioxide , Silicon oxynitride, silicon nitride, a dopant thereof (for example, B, P, or As), a derivative thereof, or a combination thereof. The plasma processing system 100 is also equipped to receive a gas, such as argon, hydrogen, nitrogen, helium, or a combination thereof, for use as a purge gas or carrier gas (for example, Ar, H ₂ , N ₂ , He, its Derivatives, or combinations thereof). An example of using the plasma processing system 100 to deposit a silicon thin film on a large-area substrate 105 can be accomplished by using silane as a processing gas in a hydrogen carrier gas.

As shown in FIG. 1A, the plasma processing system 100 generally includes a chamber body 110. The chamber body 110 includes a bottom 115 and a side wall 120. The bottom 115 and the sidewall 120 at least partially define a processing space 125. The substrate support 130 is disposed in the processing space 125. The substrate support 130 is coupled to the actuator 135. The actuator 135 is adapted to move the substrate support at least vertically to help convey the substrate 105 and / or adjust the distance between the substrate 105 and the head assembly 140. During processing, the substrate support 130 is adapted to support the substrate 105 on the substrate receiving surface 145.

The plasma processing system 100 includes a substrate transfer device 150. The substrate transfer device 150 is adapted to lift or lower the substrate 105 from the substrate receiving surface 145 of the substrate support 130. In the view of FIG. 1A, the substrate 105 is shown as being lifted from the substrate receiving surface 145 by the substrate transfer device 150. The space between the backside surface 155 of the substrate 105 and the substrate receiving surface 145 of the substrate support 130 is provided for a conventional robot or end effector (both are not shown) to pass therethrough. When the substrate transfer device 150 is located in the position as shown in FIG. 1A, the substrate 105 can be transferred into or out of the chamber body 110 through the transfer port 160.

FIG. 1B shows a schematic diagram of the contracted substrate transfer device 150. The contracted substrate transfer device 150 places a substrate 105 on a substrate receiving surface 145 for processing. The substrate transfer device 150 may include a plurality of supporting members, which are adapted to contact the backside surface 155 of the substrate 105. Such supporting members may include an edge supporting member 162 (only one is shown in FIGS. 1A and 1B) and a central supporting member 164. An edge support member 162 may be used to contact and support the edge of the substrate 105. The central support member 164 may be utilized to contact and support the area of the substrate 105 inside the edge of the substrate 105. The edge support member 162 and the central support member 164 are adapted to move (and in the X-Y plane) laterally relative to the substrate support 130 and / or rotate. The edge support member 162 and the central support member 164 are adapted to move vertically with respect to the substrate support 130 (in the Z direction).

The edge support member 162 may be coupled to the first actuator 166. The edge support member 162 may be coupled to the first actuator 166 through a support shaft 165. In some embodiments, the support shaft 165 shown may be located outside the perimeter of the substrate support 130. In other embodiments, the support shaft 165 is selectively or additionally positioned so that the support shaft 165 penetrates the substrate support 130. The central support member 164 may be coupled to the support shaft 167, and the support shaft 167 is located outside the circumference of the substrate support 130.

The central support member 164 may be coupled to the second actuator 168. Each of the first actuators 166 may be a linear driving device adapted to move the edge support member 162 in a vertical direction (Z direction). Each of the second actuators 168 may be a linear and rotary driving device, and is suitable for moving the central support member 164 up and down (in the z direction) and the movement of the central support member 164 in the X-Y plane.

In operation, the showerhead assembly 140 is assembled to supply the processing gas from the processing gas source 170 to the processing space 125. The plasma processing system 100 also includes an exhaust system 172. The exhaust system 172 is assembled to supply negative pressure to the processing space 125. The showerhead assembly 140 is generally disposed in a substantially parallel relationship with respect to the substrate support 130.

The showerhead assembly 140 includes a gas distribution plate 174 and a back plate 176. The back plate 176 can serve as a barrier plate so that a gas space can be formed between the gas distribution plate 174 and the back plate 176. The process gas source 170 is connected to the gas distribution plate 174 via a conduit 178. In one embodiment, the remote plasma source 180 is coupled to the conduit 178, and the plasma for supplying activated gas passes through the gas distribution plate 174 to the processing space 125. The plasma from the remote plasma source 180 may include an activating gas for cleaning components disposed in the processing space 125. In one embodiment, the activated cleaning gas system flows to the processing space 125. Suitable gases for cleaning include fluorine (F ₂ ), fluorine trinitride (NF ₃ ), sulfur hexafluoride (SF ₆ ), and carbon / fluorine-containing gases such as fluorocarbons. Examples are eight Octofluorotetrahydrofuran (C ₄ F ₈ O), carbonyl fluoride (COF ₂ ), hexafluoroethane (C ₂ F ₆ ), tetrafluoromethane (CF ₄ ) ), Perfluoropropane (C ₃ F ₈ )), and combinations thereof. Although carbon-containing and carbon- and oxygen-containing gases can be used, these gases are not advantageous due to possible carbon and / or oxygen contaminants.

The gas distribution plate 174, the back plate 176, and the duct 178 are generally made of a conductive material and are in electrical communication with each other. The chamber body 110 is also formed of a conductive material. The chamber body 110 is generally electrically insulated from the showerhead assembly 140. In one embodiment, the showerhead assembly 140 is fixed on the chamber body 110 by an insulator 182.

In one embodiment, the substrate support 130 is also made of a conductive material, and the substrate support 130 and the showerhead assembly 140 are assembled as opposite electrodes for generating processing gas during processing and / or pre-processing or post-processing processes. The plasma 184 is in between. In addition, the substrate support 130 and the showerhead assembly 140 may be utilized to provide a plasma of a cleaning gas during a cleaning process. The substrate support 130 may also, for example, circulate fluid by heating with a resistive heating element (not shown) and / or including a fluid channel (not shown) to control the temperature of the substrate located thereon.

Before, during, and after processing, a radio frequency (RF) power source 186 is generally used to generate a plasma 184 between the showerhead assembly 140 and the substrate support 130. In some embodiments, the substrate support 130 is at a ground potential. The RF power source 186 may also be used to maintain the powered species, or to stimulate the cleaning gas supplied from the remote plasma source 180. The impedance matching circuit 188 may be coupled between the RF power source 186 and the showerhead assembly 140. In some embodiments, the frame member 190 (shown in FIG. 1B) can be placed close to the periphery of the substrate 105. The frame member 190 may be utilized to confine gas above the substrate 105 during processing.

Figures 2A-8B are views showing a substrate transfer device 150 showing an embodiment of a substrate transfer process. Figures 2A, 3A, 4A, 5A, 6A, 7A, and 8A are plan views of the substrate 105 and the substrate support 130, and Figures 2B, 3B, 4B, 5B, 6B, 7B, and 8B are shown in the first Front views of the processes shown in 2A, 3A, 4A, 5A, 6A, 7A, and 8A.

2A and 2B are schematic diagrams of the end effector 200 having a plurality of fingers 205 that at least partially support the substrate 105 above the substrate support 130. The edge support member 162 may be used to support the side of the substrate 105, and the central support member 164 may be used to support the area of the substrate 105 inside the side of the substrate 105. The edge support member 162 and the central support member 164 may include a ceramic material. The edge support member 162 and the central support member 164 may include Al ₂ O _3, for example. The surface of the edge support member 162 and the central support member 164 of the contact substrate 105 may be Al ₂ O ₃ , anodized aluminum, or graphite. The edge support member 162 may be used to support all four sides of the substrate 105 or only two sides of the substrate 105. The edge support member 162 is located outside the fingers 205 so as not to interfere with the operation of the end effector 200. At least a portion of the central support member 164 may be offset (for example, an “L” shape) so as not to interfere with the fingers 205 of the end effector 200.

The end effector 200 can transfer the substrate 105 to a position above the substrate support 130 shown in FIG. 2A. Thereafter, the edge support member 162 and the central support member 164 can be driven to the positions shown in FIG. 2B.

FIG. 3A is a schematic diagram of the end effector 200 of FIGS. 2A and 2B that are contracted, and FIG. 3B is a schematic diagram of the edge support member 162 and the central support member 164 that support the substrate 105 on the substrate support 130. As shown in FIG. 3B, the edge support member 162 and the central support member 164 can be slightly raised from the substrate support 130, so the fingers 205 are separated from the back surface of the substrate 105 to avoid scratching.

4A and 4B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 3B. In addition, the inner group 400 of the central support member 164 is rotated to a position outside the circumference of the substrate 105.

5A and 5B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 4B. The central portion of the substrate 105 is closer to the substrate support 130.

6A and 6B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 5B. In addition, the center group 600 of the center support member 164 is rotated to a position outside the circumference of the base plate 105. Compared to the view shown in FIG. 5B, the center portion of the substrate 105 is closer to the substrate support 130.

7A and 7B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 6B. In addition, the outer group 700 of the central support member 164 is rotated to a position outside the circumference of the substrate 105. The center portion of the substrate 105 is in contact with the substrate support 130. The sides of the substrate 105 remain supported by the edge support members 162, while all the central support members 164 rotate to be outside the circumference of the substrate 105.

8A and 8B are schematic diagrams of the substrate 105 lowered onto the substrate support 130. Lowering is accomplished by lowering the edge support member 162 toward the substrate support 130. In some embodiments, the edge support member 162 is lowered into a groove along the edge of the substrate support 130. In this embodiment, the edge support member 162 is located between the substrate 105 and the substrate support 130.

Figures 9A-15B show several views of another embodiment of a substrate transfer device 150 showing another embodiment of a substrate transfer process. 9A, 10A, 11A, 12A, 13A, 14A, and 15A are plan views of the substrate 105 and the substrate support 130, and 9B, 10B, 11B, 12B, 13B, 14B, and 15B are 9A, 10A, Front views of the processes shown in Figures 11A, 12A, 13A, 14A and 15A.

Except that the central edge support member 900 is located between the central support member 164 and the edge support member 162, the substrate transfer sequence is substantially similar to the embodiment shown in Figs.

9A and 9B are schematic diagrams of the end effector 200 having a plurality of fingers 205 that at least partially support the substrate 105 above the substrate support 130. The edge support member 162 and the central edge support member 900 may be used to support the sides of the substrate 105, and the central support member 164 may be used to support the area of the substrate 105 inside the sides of the substrate 105. The center edge support member 900 may include a ceramic material. The edge support member 162 is located outside the fingers 205 so as not to interfere with the operation of the end effector 200. The central edge supporting member 900 is located between the fingers 205 so as not to interfere with the operation of the end effector 200.

FIG. 10A shows a schematic diagram of the end effector 200 in FIGS. 9A and 9B, and FIG. 10B shows a schematic diagram of the edge support member 162 and the central support member 164 that support the substrate 105 above the substrate support 130. As shown in FIG. 10B, the edge support member 162 and the central support member 164 can be slightly raised from the substrate support 130, so the fingers 205 are separated from the back surface of the substrate 105 to avoid scratching.

11A and 11B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 10B. In addition, the inner group 400 of the central support member 164 is rotated to a position outside the circumference of the substrate 105.

12A and 12B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 11B. The center portion of the substrate 105 is close to and close to the substrate support 130.

13A and 13B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 12B. In addition, the center group 600 of the center support member 164 is rotated to a position outside the circumference of the substrate 105. Compared to the view shown in FIG. 12B, the center portion of the substrate 105 is closer to the substrate supporting member 130.

14A and 14B are schematic diagrams of the substrate 105 lowered toward the substrate support 130 compared to the view shown in FIG. 13B. In addition, the outer group 700 of the central support member 164 is rotated to a position outside the circumference of the substrate 105. The center portion of the substrate 105 is in contact with the substrate support 130. The sides of the substrate 105 are supported by the edge support member 162 and the central edge support member 900, and the center of the substrate 105 is supported by the outer group of the central support member 164.

15A and 15B are schematic diagrams of the substrate 105 lowered onto the substrate support 130. Lowering is accomplished by lowering the edge support member 162 and the center edge support member 900 toward the substrate support 130. In addition, the outer group of the central support member 164 is rotated to be outside the circumference of the substrate 105.

FIG. 16A illustrates an isometric plan view of the substrate support 130 with an edge support member 162. The edge support member 162 is located on the opposite side of the substrate support 130. In addition, the frame member 190 is shown above the substrate support 130. The central edge support member 900 is also shown on the opposite side of the substrate support 130. The ceramic tape 1600 is also shown on the opposite side of the central edge support member 900. When the edge support member 162 is assembled to move in order to transfer the substrate 105, the ceramic tape 1600 may remain coupled to the substrate support 130. In an assembly that does not use the center edge support member 900, the ceramic tape 1600 may be a single piece (that is, not damaged by the center edge support member 900).

FIG. 16B shows an isometric view of a part of the substrate support 130 shown in FIG. 16A. The edge support member 162 and the ceramic tape 1600 are shown as being positioned outside the circumference 1605 of the substrate 105. The recessed surrounding area 1610 of the substrate support 130 is also shown, and the frame member 190 can be positioned in the recessed surrounding area 1610 of the substrate support 130.

FIG. 16C shows a partial side cross-sectional view of the substrate support 130 and the edge support member 162 located thereon. The edge support member 162 (only one is shown in this view) is adapted to be positioned in the recess 1615 below the substrate receiving surface 145 of the substrate support 130. The groove 1615 can be adjusted to accommodate the width of the edge support member 162. The groove 1615 can also be adjusted to accommodate the thickness of the edge support member 162, so that the upper surface 1620 of the edge support member 162 is substantially coplanar with the upper surface 1625 of the substrate 105. The frame member 190 is adapted to cover the upper surface 1620 of the edge support member 162 during processing, but is separated from this position to show other elements.

The openings 1630 in the area 1635 surrounding the substrate support 130 are also shown. The opening 1630 can be adjusted to accommodate and provide a channel for supporting the shaft 1640. Although only one opening 1630 is shown in FIG. 16C, the surrounding area 1635 of the substrate support 130 may have other openings. The support shaft 1640 may be a support shaft 165 for the edge support member 162 and a support shaft for the center edge support member 900. The opening 1630 can be used for an individual support shaft 165 to contact, lift and lower the edge support member 162.

Several embodiments of the substrate transfer apparatus 150 described herein provide many advantages. One of the advantages includes eliminating the lifting pin in the substrate support 130 and the lifting pin pocket in the substrate support 130. The substrate receiving surface 145 of the substrate support 130 does not include any through holes (ie, is not perforated), and reduces or eliminates cold spots on the substrate. The substrate edge supports (edge support member 162 and central edge support member 900) affect the film properties and have a minimum width to have a minimal impact on RF coupling. Another advantage of the substrate transfer device 150 includes less damage to the backside surface of the substrate 105. The traditional lifting pins that are easy to scratch the substrate are eliminated, and the scratch of the substrate is reduced or eliminated. By gradually removing the central support member 164 (shown in FIGS. 2B-8B and 9B-15B) from the center, the substrate transfer device 150 places the substrate 105 on the substrate support from the center to the edge of the substrate Piece 130. During the transfer operation, the initial contact of the center of the substrate 105 with the substrate support 130 reduces the movement of the substrate 105 to a minimum. The substrate transfer device 150 also functions to control the stress (for example, less than about 100 MPa) to maintain the shape of the substrate 105 (for example, to minimize deformation).

In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

100‧‧‧ Plasma treatment system

105‧‧‧ substrate

110‧‧‧ chamber body

115‧‧‧ bottom

120‧‧‧ sidewall

125‧‧‧ processing space

130‧‧‧ substrate support

135‧‧‧Actuator

140‧‧‧ Nozzle assembly

145‧‧‧ substrate receiving surface

150‧‧‧ substrate transfer device

155‧‧‧back surface

160‧‧‧Transport

162‧‧‧Edge support member

164‧‧‧ central support member

165, 167, 1640 ‧‧‧ support shaft

166‧‧‧First actuator

168‧‧‧Second Actuator

170‧‧‧Processing gas source

172‧‧‧Exhaust system

174‧‧‧Gas distribution plate

176‧‧‧Back

178‧‧‧ Catheter

180‧‧‧Remote Plasma Source

182‧‧‧ insulator

184‧‧‧ Plasma

186‧‧‧RF Power

188‧‧‧Impedance matching circuit

190‧‧‧Frame components

200‧‧‧End effector

205‧‧‧ fingers

400‧‧‧Internal group

600‧‧‧ Central Section

700‧‧‧External Team

900‧‧‧ central edge support member

1600‧‧‧ceramic tape

1605‧‧‧perimeter

1610‧‧‧ recessed into the surrounding area

1615‧‧‧Groove

1620, 1625‧‧‧ Top surface

1630‧‧‧Opening

1635‧‧‧surrounding area

In order to make the above-mentioned features of the present disclosure understandable in detail, a more specific description briefly extracted from the above disclosure may refer to several embodiments. It is worth noting, however, that for other equivalent embodiments that can be recognized by this disclosure, the accompanying drawings only show the typical embodiments of this disclosure and therefore should not be considered as a limitation of its scope.

FIG. 1A is a cross-sectional view of a plasma processing system having an embodiment of a substrate transfer device.

FIG. 1B shows a schematic diagram of the substrate transfer device of FIG. 1A, which is contracted. The contracted substrate transfer device places a substrate on a substrate receiving surface of a substrate support for processing.

Figures 2A-8B are schematic diagrams showing one embodiment of a substrate transfer device according to an embodiment of a substrate transfer process.

Figures 9A-15B are schematic diagrams showing another embodiment of a substrate transfer apparatus showing another embodiment of a substrate transfer process.

FIG. 16A illustrates an isometric plan view of a substrate support having an edge support member, and the edge support members are located on opposite sides of the substrate support.

FIG. 16B shows an isometric view of a portion of the substrate support shown in FIG. 16A.

FIG. 16C shows a partial side cross-sectional view of the substrate support member and the edge support member located thereon.

To facilitate understanding, the same reference numbers have been used when feasible to indicate common elements in the drawings. It is contemplated that elements and / or process steps of one embodiment may be beneficially incorporated in other embodiments without additional explanation.

Claims (24)

A substrate transfer device includes: a substrate support having a circumference; and a plurality of central support members located outside the circumference. The substrate transfer device described in item 1 of the patent application scope further includes: an edge supporting member located on a plurality of opposite sides of the substrate supporting member. The substrate transfer device according to item 1 of the scope of the patent application, wherein each of the central support members and each of the edge support members include a support shaft, and the support shaft is coupled to the actuator. The substrate transfer device according to item 3 of the scope of patent application, wherein the actuator includes a plurality of first actuators, each of the first actuators is coupled to an individual support shaft of the central support members. The substrate transfer device according to item 4 of the scope of the patent application, wherein each of the first actuators is a plurality of linear and rotary actuators. The substrate transfer device according to item 3 of the scope of patent application, wherein the actuator includes a plurality of second actuators, each of the second actuators is coupled to an individual support shaft of the edge support members. The substrate transfer device according to item 6 of the scope of the patent application, wherein each of the second actuators is a plurality of linear actuators. The substrate transfer device according to item 3 of the scope of the patent application, wherein each of the support shafts of the central support members is located outside the perimeter of the substrate support. The substrate transfer device according to item 3 of the scope of patent application, wherein each of the support shafts of the edge support members is located inside the perimeter of the substrate support. The substrate transfer device according to item 1 of the patent application scope, wherein the substrate support includes a substrate receiving surface, and the substrate receiving surface is not perforated. A plasma processing system includes: a chamber; a substrate support member having a circumference and disposed in the chamber; and a substrate transfer device located in the chamber, the substrate transfer device including a plurality of central support members The central support members are located outside the perimeter. The plasma processing system according to item 11 of the scope of patent application, further comprising: an edge supporting member located on a plurality of opposite sides of the substrate supporting member. The plasma processing system according to item 11 of the scope of patent application, wherein the substrate support includes a substrate receiving surface, and the substrate receiving surface is not perforated. The plasma processing system according to item 11 of the scope of the patent application, wherein each of the central support members and each of the edge support members include a support shaft, and the support shaft is coupled to the actuator. The plasma processing system according to item 14 of the scope of patent application, wherein the actuator includes a plurality of first actuators, each of the first actuators is coupled to an individual support shaft of the central support members . The plasma processing system according to item 15 of the scope of patent application, wherein each of the first actuators is a plurality of linear and rotary actuators. The plasma processing system according to item 14 of the patent application, wherein the actuator includes a plurality of second actuators, each of the second actuators is coupled to an individual support shaft of the edge support members . The plasma processing system according to item 17 of the scope of the patent application, wherein each of the second actuators is a plurality of linear actuators. The plasma processing system according to item 14 of the scope of the patent application, wherein each of the support shafts of the central support members is located outside the perimeter of the substrate support. The plasma processing system according to item 14 of the scope of the patent application, wherein each of the support shafts of the edge support members is located inside the perimeter of the substrate support. A method for transferring a substrate to a substrate receiving surface of a substrate support, the method comprising: supporting the substrate in a chamber, the substrate supporting a plurality of central regions using one or more central support members ; Using a plurality of edge support members to support two opposite edges of the substrate; rotating the one or more central support members through a perimeter of the substrate support; and lowering the two opposite edges of the substrate toward the substrate receiving surface. The method of claim 21, wherein the edge supporting members are accommodated in the perimeter of the substrate support. The method as described in claim 21, wherein rotating the one or more central support members is performed before lowering the two opposite edges of the substrate toward the substrate receiving surface. The method of claim 23, wherein a central region of the substrate contacts the substrate receiving surface before the two opposite edges of the substrate contact the substrate receiving surface.