CN105932935A - Manufacturing method of solar power generation device - Google Patents
Manufacturing method of solar power generation device Download PDFInfo
- Publication number
- CN105932935A CN105932935A CN201610332704.8A CN201610332704A CN105932935A CN 105932935 A CN105932935 A CN 105932935A CN 201610332704 A CN201610332704 A CN 201610332704A CN 105932935 A CN105932935 A CN 105932935A
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- heat
- water
- conducting base
- controller unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000010248 power generation Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 205
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 171
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 38
- 238000009413 insulation Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 239000004020 conductor Substances 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- 230000005680 Thomson effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24T—GEOTHERMAL COLLECTORS; GEOTHERMAL SYSTEMS
- F24T10/00—Geothermal collectors
- F24T10/10—Geothermal collectors with circulation of working fluids through underground channels, the working fluids not coming into direct contact with the ground
-
- H02J3/383—
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/20—Systems characterised by their energy storage means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/10—Geothermal energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E70/00—Other energy conversion or management systems reducing GHG emissions
- Y02E70/30—Systems combining energy storage with energy generation of non-fossil origin
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a solar power generation device. The solar power generation device comprises a plurality of film solar cells, M N-type semiconductors, M P-type semiconductors, a heat-conducting base, an accumulator unit, a controller unit, 4M temperature sensors, a water pump, N electric valves, and N water pipes; the N-type semiconductors and the P-type semiconductors are I-shaped; guide baffles are staggered in a water storage cavity of the heat-conducting base; the lengths of the N water pipes are different, the length range is between 5-200m; the N-type semiconductors and the P-type semiconductors are arranged at intervals, and the adjacent N-type semiconductor and the P-type semiconductor are in series connection; the plurality of film solar cells are connected in series, and then connected with the N-type semiconductor and the P-type semiconductor in series, and finally used for charging the accumulator unit. The solar power generation and the thermoelectric power generation are effectively combined by the method provided by the invention, an efficient technical scheme of utilizing solar energy and geothermal energy is provided, and the power generation efficiency is higher.
Description
The application is filing date 2016-02-19, Application No. 2016100931676, the invention entitled sun
The divisional application of the patent application of energy TRT.
Technical field
The present invention relates to a kind of device of solar generating, belong to technical field of new energy power generation.
Background technology
Solar energy refers to the infrared radiant energy of the sun, and main performance is exactly the sunray often said, is typically used as at present
Generate electricity or provide the energy for water heater.In the case of Fossil fuel reduces increasingly, solar energy has become the mankind
Use the important component part of the energy, and be constantly developed.The utilization of solar energy has photothermal deformation and photoelectricity to turn
Changing two ways, solar electrical energy generation is a kind of emerging regenerative resource.Sensu lato solar energy also includes the earth
On wind energy, chemical energy, water can etc..
Along with the development particularly Domestic Environment of industrial civilization is seriously polluted, haze weather happens occasionally, warp
Research main cause is that coal burning causes, and we more come strongly for the demand of new forms of energy the most instantly.Tradition
Fossil energy can not meet the needs of current environment, in order to avoid predicament and the environment of lack of energy are dirty
The aggravation of dye, development solar energy industry is supported by current government energetically, solar energy from the point of view of current new forms of energy develop
It should be a most important part in new forms of energy development.
Solar energy rich reserves, each second, the sun to be equivalent to the energy of 21,000,000,000 barrels of oil, phase to earth conveying
When the energy consumed for a day in the whole world.The solar energy resources of China is the abundantest, except Guizhou Plateau part
Outside area, most of China region is all the abundant area of solar energy resources, and current solar energy utilization ratio is the most not
To 1/1000.Therefore have a high potential at China's Devoting Major Efforts To Developing solar energy.The utilization of solar energy is divided into " photo-thermal "
" photovoltaic " two kinds, wherein light-heating type water heater is widely used in China.Photovoltaic is to convert light energy into electricity
The forms of electricity generation of energy, originates from more than 100 year front " photovoltage phenomenon ".The utilization of solar energy is the most more
Many refers to photovoltaic power generation technology.Photovoltaic power generation technology is divided into off-network type and grid type two according to the difference of load
Kind, photovoltaic power generation technology in early days is limited by solar module cost factor, mainly with small-power off-network
Type is main, meets outlying district without electrical network residential electricity consumption problem.Along with the decline of photovoltaic module cost, photovoltaic
The cost of generating constantly declines, and grid-connected type photovoltaic system progressively becomes main flow.
Thermoelectric generator, is the solid state device of a kind of static state, does not has rotatable parts, and volume is little, the life-span is long,
Noiseless during work, and need not safeguard, become the focus of space power system research and development, significantly have stimulated thermoelectric skill
The development of art.The physical explanation of Thomson effect is exactly: in metal during non-uniform temperature, temperature eminence from
Bigger than the free electron kinetic energy of temperature lower by electronics.As gas, heat expansion can be produced when non-uniform temperature
Dissipating, therefore free electron spreads to temperature low side from temperature is high-end, piles up in low-temperature end, thus at conductor
Interior formation electric field, just draws into an electric potential difference at metal bar two ends.The diffusion one of this free electron is straight
The effect of electronics is balanced with the thermal diffusion of electronics by row to electric field force.
How to combine ingenious to solar electrical energy generation and thermo-electric generation, that is solaode is in generating
During be certain to produce heat.If this heat is transported to thermoelectric generator, utilize thermo-electric generation effect
The heat energy of solar electrical energy generation is converted to electric energy, and the research article of current this respect is little.Patent No.
2015202003803, invention and created name is: a kind of wearable device based on solar energy, body temperature generating supplies
The utility model patent of electrical equipment proposes a kind of can generating by solar energy and the detailed technical scheme of thermo-electric generation,
But one end, two ends of the N-type semiconductor of the semiconductor temperature differential generating of this technical scheme and P-type semiconductor is to utilize
The waste heat of solar electrical energy generation, the other end is the body temperature utilizing human body, although can realize thermo-electric generation, but send out
Electricity is very limited.
Summary of the invention
It is an object of the invention to provide a kind of device of solar generating, this TRT incorporates solar energy and sends out
Electricity and semiconductor temperature differential generating, one end of the quasiconductor of semiconductor temperature differential generating connects with the end face of solaode
Touching, other end heat energy contiguously, the big generated energy of the two ends temperature difference of such quasiconductor is big.
In order to realize object above, the technical solution adopted in the present invention is:
1, device of solar generating, it is characterised in that include multiple thin-film solar cells, M N-type half
Conductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature sensor,
Water pump, N number of electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor with
Controller unit electrically connects；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, and controller unit controls simultaneously
The startup of water pump and stopping.
Technical scheme more preferably, described controller unit uses AT89S52 single-chip microcomputer.
More detailed technical scheme, the water inlet of described water pump can turning by a multiple input single output
Changing device connects the delivery outlet of the electric control valve of each water pipe.
More detailed technical scheme, described electric control valve employing single-chip microcomputer can be with directly actuated electrically operated valve.
2, the manufacture method of a kind of device of solar generating, it is characterised in that include multiple thin film solar electricity
Pond, M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit,
4M temperature sensor, water pump, N number of electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
The first step: described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor
And connect between P-type semiconductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Second step: N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature
Sensor electrically connects with controller unit；
3rd step: multiple thin-film solar cells by heat conductive silica gel be bonded at N-type semiconductor, P-type semiconductor upper
Surface, and thin-film solar cells and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base is bonded at the following table of N-type semiconductor, P-type semiconductor by heat conductive silica gel
Face；
4th step: described N number of water pipe is each perpendicular to ground, and is embedded in below ground；Described water pipe divides
Tong Guo not connect the water inlet of water pump by electric control valve, the outlet of water pump connects the water inlet of heat-conducting base；Described
The end that controls of electric control valve be all connected with the I/O port of controller unit, controller unit controls water pump simultaneously
Start and stop.
3, the control method of a kind of device of solar generating, it is characterised in that include multiple thin-film solar cells,
M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit, 4M
Temperature sensor, water pump, N number of electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor with
Controller unit electrically connects；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, and controller unit controls simultaneously
The startup of water pump and stopping；
The numbered i, i=1,2 of electric control valve ..., N；
Concrete control method:
The first step, controller unit controls starting mode of pump, then controls to open each electric control valve successively 5 minutes,
It is then shut off this electric control valve；
During each electric control valve is opened, controller unit is by N-type semiconductor, P-type semiconductor
Then the numerical value summation of all temperature sensor collections of upper surface averages, and is designated as Mi；Controller unit
The numerical value of N-type semiconductor, all temperature sensor collections of the lower surface of P-type semiconductor is sued for peace and then makes even
Average, is designated as Ni；Mi Yu Ni makees poor taking absolute value and is designated as Xi, then preserves Xi；
Second step, controller unit controls to open the electric control valve corresponding to max{Xi}.
4, solar power system, it is characterised in that include multiple device of solar generating；
Described device of solar generating includes multiple thin-film solar cells, M N-type semiconductor, M P
Type quasiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature sensor, water pump, N
Individual electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor with
Controller unit electrically connects；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, and controller unit controls simultaneously
The startup of water pump and stopping.
Electrical network is connected by DC/AC unit after the secondary battery unit parallel connection of all device of solar generating.
Compared with prior art, it is an advantage of the current invention that:
First, solar electrical energy generation module is together in series with semi-conductor thermo-electric generation module, it is provided that generating electricity
Pressure and generated energy；Second, utilization is all clean energy resource, is solar energy and geothermal energy respectively；3rd, N-type
Quasiconductor, P-type semiconductor are all in " work " font, first, this design substantially increase N-type semiconductor,
P-type semiconductor and thin-film solar cells, the contact area of heat-conducting base；Secondly, N-type semiconductor, p-type
Quasiconductor and thin-film solar cells, the contact surface of heat-conducting base are no longer necessary to arrange sheet metal and heat-conducting plate, make
Obtain structure simpler, finally, although the heat conductivility of N-type semiconductor, P-type semiconductor leading not as conductor
Good in thermal property, but during thermo-electric generation, N-type semiconductor, P-type semiconductor heat conductivility still
Existing, the heat energy of a final end face still can spread to another end face, and N-type semiconductor, p-type half
" work " font design of conductor can be greatly prolonged diffusion time of heat energy, thus significantly provide N-type semiconductor,
P-type semiconductor thermo-electric generation efficiency；
4th, be crisscross arranged in the storage cavity of heat-conducting base flow apron, makes flow apron in storage cavity
The interior separation constitutes water stream channel, and top edge and the storage cavity top inner wall of flow apron exists interval simultaneously, as
The current of this lower floor uniformly spread along water stream channel Tortuous flow, and the current on upper strata quickly flow from the interval of top
Dynamic, quickly the current of flowing play quick heat radiating effect, and the current of Tortuous flow play buffering accumulation of energy even results,
Levels carries out heat interaction simultaneously, it is ensured that thermal diffusion is the fastest but also stable and uniform ground is carried out；
5th；The length of N number of water pipe differs and is arranged at subsurface and is all connected with water pump, due to subsoil water
Being constant temperature, and degree of depth different temperatures is different, such as the when of summer, outdoor temperature is high, and the temperature of subsoil water
Spending low, the when of winter, outdoor temperature is low and the temperature of subsoil water high, but when change in depth is bigger, i.e.
For macroscopic view, subsoil water more deep water temperature is the highest.From ground the deepest 100 meters, temperature increases about
2-3 degrees centigrade.The formation temperature of 5～10 meters below earth's surface does not becomes with the change of outside atmosphere temperature
Change, maintain 15～17 DEG C throughout the year.So equal due to the upper and lower surface of N-type semiconductor, P-type semiconductor
Being provided with temperature sensor, controller unit controls starting mode of pump, the then water in the different water pipe of circulation extraction,
This time N-type semiconductor, P-type semiconductor upper and lower surface arrange temperature sensor gather temperature
Degree does difference, if water pump connects 20 meters of deep water pipes, temperature approach is maximum, then water pump just has been used up
20 meters of deep water pipes supply water, and the generating efficiency of such thermo-electric generation is maximum, and the outlet of heat-conducting base
Water supply installation, such as water tank etc. can be connected.
Accompanying drawing explanation
Fig. 1 is the thin-film solar cells of the present invention, N-type semiconductor P-type semiconductor, a few part of heat-conducting base
Structural representation.
Fig. 2 is the control principle schematic diagram of the water pipe of the present invention, water pump.
Fig. 3 is the block diagram of the solar power system of the present invention.
Fig. 4 is the heat dissipation base structural representation of the present invention.
Fig. 5 is sectional view at A-A in Fig. 4.
Detailed description of the invention
Below in conjunction with the accompanying drawings invention is described in further detail.
Embodiment 1: device of solar generating, including multiple thin-film solar cells, 10 N-type semiconductors,
10 P-type semiconductors, heat-conducting base, secondary battery unit, controller unit, 40 temperature sensors, water
Pump, 10 electric control valves, 10 water pipes；The length of 10 water pipes is respectively 5 meters, 10 meters, 15 meters,
20 meters, 25 meters, 50 meters, 75 meters, 100 meters, 125 meters, 150 meters, it is each perpendicular to ground and is arranged at ground
Below.N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；Flow apron separates composition water stream channel in storage cavity, as shown in Figures 4 and 5；N-type semiconductor
It is spaced with P-type semiconductor, and connects between adjacent N-type semiconductor and P-type semiconductor；Multiple thin
Film solar cell is connected, and then connects with N-type semiconductor and P-type semiconductor, finally fills to secondary battery unit
Electricity；Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；The upper surface of described heat-conducting base with
N-type semiconductor, the lower surface insulated contact of P-type semiconductor；N-type semiconductor, the upper surface of P-type semiconductor and
Lower surface is respectively provided with temperature sensor, and temperature sensor electrically connects with controller unit；Described N number of water pipe is equal
It is perpendicular to ground, and is arranged at below ground；Described water pipe connects entering of water pump by electric control valve respectively
The mouth of a river, the outlet of water pump connects the water inlet of heat-conducting base；The control end of electric control valve is all connected with controller list
The I/O port of unit, such controller unit can control being turned on and off of each electrically operated valve, same to time control
Device unit processed controls startup and the stopping of water pump.
Wherein, described controller unit uses AT89S52 single-chip microcomputer.The water inlet of described water pump is to pass through
The conversion equipment of one multiple input single output connects the delivery outlet of the electric control valve of each water pipe.
Wherein, temperature sensor is respectively arranged at the upper following table of the upper and lower surface of N-type semiconductor, P-type semiconductor
Face, the data of upper surface all of temperature sensor collection average, and all of temperature sensor of lower surface is adopted
The data of collection are averaged, and so latter two meansigma methods takes difference, and during difference maximum, thermo-electric generation efficiency is the highest.
Operation principle of the present invention illustrates: the length of multiple water pipes differs and be vertically installed in subsurface and all
Being connected with water pump, owing to subsoil water is constant temperature, and degree of depth different temperatures is different, such as room when of summer
Outer temperature is high, and the temperature of subsoil water is low, sunlight thin-film solar cells generating when of daytime in summer,
Certain heat can be produced while generating, this partial heat be delivered to N-type semiconductor, P-type semiconductor upper
Surface, as hot junction, and the temperature of subsoil water is relatively low, passes to N-type semiconductor, p-type by heat-conducting base
Quasiconductor lower surface, as cold end, thus the most cold and hot end thermo-electric generation；Otherwise the when of winter, the winter
It when outdoor temperature low and the temperature of subsoil water high.
When change in depth is bigger, i.e. for macroscopic view, subsoil water more deep water temperature is the highest.From ground down
The deepest 100 meters, temperature increases about 2-3 degrees centigrade.The formation temperature of 5～10 meters below earth's surface is the most not
Change with the change of outside atmosphere temperature, maintain 15～17 DEG C throughout the year.
As for why have employed 4M temperature sensor？Reason is as follows: N-type semiconductor, P-type semiconductor
The numerical value of the temperature sensor collection of upper surface is averaged and N-type semiconductor, the lower surface of P-type semiconductor
The numerical value of temperature sensor collection is averaged and is done difference, and difference the biggest thermo-electric generation efficiency is the highest；Average
It is more accurate that exact value difference judges.
As for why have employed multiple water pipe？Reason is as follows: the when of summer, and underground water temperature is relatively low, but
The underground water temperature being proximate to earth's surface is the highest, when the degree of depth reaches to a certain degree, and water temperature can be more and more higher；Winter
It when, underground water temperature can be higher, but also can be relatively low near the underground water temperature on earth's surface, when the degree of depth reaches
To a certain extent, water temperature can be more and more higher；So water pump is by connecting multiple water pipes, and needing can the when of generating
To select that water pipe (the i.e. upper and lower surface of N-type semiconductor, P-type semiconductor most beneficial for thermo-electric generation
Temperature approach is maximum).
Controller unit controls starting mode of pump, the then water in the different water pipe of circulation extraction, this time N-type half
The temperature of the temperature sensor collection that conductor, the upper and lower surface of P-type semiconductor are arranged does difference, if
When water pump connects 20 meters of deep water pipes, temperature approach is maximum, then water pump just has been used up 20 meters of deep water pipes and supplies
Water, the generating efficiency of such thermo-electric generation is maximum, and the outlet of heat-conducting base can connect water supply installation,
Such as water tank etc..
Wherein, N-type semiconductor, P-type semiconductor are all in " work " font, and first, this design is greatly improved
N-type semiconductor, P-type semiconductor and thin-film solar cells, the contact area of heat-conducting base；Secondly, N
Type quasiconductor, P-type semiconductor and thin-film solar cells, the contact surface of heat-conducting base are no longer necessary to arrange metal
Sheet and heat-conducting plate so that structure is simpler, finally, though the heat conductivility of N-type semiconductor, P-type semiconductor
So not as the good heat conductivity of conductor, but during thermo-electric generation, N-type semiconductor, P-type semiconductor
Heat conductivility still exist, the heat energy of a final end face still can spread to another end face, and N
Type quasiconductor, " work " font design of P-type semiconductor can be greatly prolonged diffusion time of heat energy, thus greatly
N-type semiconductor, P-type semiconductor thermo-electric generation efficiency are provided greatly.
The manufacture method of device of solar generating, including multiple thin-film solar cells, M N-type semiconductor,
M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature sensor, water pump,
N number of electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
The first step: described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor
And connect between P-type semiconductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Second step: N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature
Sensor electrically connects with controller unit；
3rd step: multiple thin-film solar cells by heat conductive silica gel be bonded at N-type semiconductor, P-type semiconductor upper
Surface, and thin-film solar cells and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base is bonded at the following table of N-type semiconductor, P-type semiconductor by heat conductive silica gel
Face；
4th step: described N number of water pipe is each perpendicular to ground, and is embedded in below ground；Described water pipe divides
Tong Guo not connect the water inlet of water pump by electric control valve, the outlet of water pump connects the water inlet of heat-conducting base.Described
The end that controls of electric control valve be all connected with the I/O port of controller unit, controller unit controls water pump simultaneously
Start and stop.
The control method of device of solar generating, it is characterised in that include multiple thin-film solar cells, M
N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature
Sensor, water pump, N number of electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor with
Controller unit electrically connects；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, and controller unit controls simultaneously
The startup of water pump and stopping.
The numbered i, i=1,2 of electric control valve ..., N；
Concrete control method:
The first step, controller unit controls starting mode of pump, then controls to open each electric control valve successively 5 minutes,
It is then shut off this electric control valve；
During each electric control valve is opened, controller unit is by N-type semiconductor, P-type semiconductor
Then the numerical value summation of all temperature sensor collections of upper surface averages, and is designated as Mi；Controller unit
The numerical value of N-type semiconductor, all temperature sensor collections of the lower surface of P-type semiconductor is sued for peace and then makes even
Average, is designated as Ni；Mi Yu Ni makees poor taking absolute value and is designated as Xi, then preserves Xi；
Second step, controller unit controls to open the electric control valve corresponding to max{Xi}.(second step max
Xi} is by that meaning taken out maximum in the Xi of preservation, if max{Xi}=X5, the meaning
The 5th electric control valve when opening, N-type semiconductor, P-type semiconductor upper and lower surface temperature gap maximum).
Solar power system: pass through DC/AC after the secondary battery unit parallel connection of each device of solar generating
Unit connects electrical network, thus realizes the function of solar electrical energy generation input electrical network.
Claims (1)
1. the manufacture method of a device of solar generating, it is characterised in that include multiple thin-film solar cells,
M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit, 4M
Temperature sensor, water pump, N number of electric control valve, N number of water pipe；Wherein, M >=6, N >=3；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the left side of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
Flow apron it is staggeredly equipped with between front inner wall and the rear side inwall of storage cavity, and flow apron and water inlet
Water inlet direction perpendicular；The top edge of flow apron and storage cavity top inner wall interval are at 1～2 centimetre
Between；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
The first step: described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor
And connect between P-type semiconductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Second step: N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature
Sensor electrically connects with controller unit；
3rd step: multiple thin-film solar cells by heat conductive silica gel be bonded at N-type semiconductor, P-type semiconductor upper
Surface, and thin-film solar cells and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base is bonded at the following table of N-type semiconductor, P-type semiconductor by heat conductive silica gel
Face；
4th step: described N number of water pipe is each perpendicular to ground, and is embedded in below ground；Described water pipe divides
Tong Guo not connect the water inlet of water pump by electric control valve, the outlet of water pump connects the water inlet of heat-conducting base；Described
The end that controls of electric control valve be all connected with the I/O port of controller unit, controller unit controls water pump simultaneously
Start and stop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610332704.8A CN105932935A (en) | 2016-02-19 | 2016-02-19 | Manufacturing method of solar power generation device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610093167.6A CN105529984A (en) | 2016-02-19 | 2016-02-19 | Solar generating set |
| CN201610332704.8A CN105932935A (en) | 2016-02-19 | 2016-02-19 | Manufacturing method of solar power generation device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610093167.6A Division CN105529984A (en) | 2016-02-19 | 2016-02-19 | Solar generating set |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105932935A true CN105932935A (en) | 2016-09-07 |
Family
ID=55772023
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610093167.6A Pending CN105529984A (en) | 2016-02-19 | 2016-02-19 | Solar generating set |
| CN201610307636.XA Pending CN105958939A (en) | 2016-02-19 | 2016-02-19 | Solar power generation device |
| CN201610332704.8A Pending CN105932935A (en) | 2016-02-19 | 2016-02-19 | Manufacturing method of solar power generation device |
| CN201610307564.9A Pending CN105958902A (en) | 2016-02-19 | 2016-02-19 | Control method of solar power generation device |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610093167.6A Pending CN105529984A (en) | 2016-02-19 | 2016-02-19 | Solar generating set |
| CN201610307636.XA Pending CN105958939A (en) | 2016-02-19 | 2016-02-19 | Solar power generation device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610307564.9A Pending CN105958902A (en) | 2016-02-19 | 2016-02-19 | Control method of solar power generation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (4) | CN105529984A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932909B (en) * | 2016-06-29 | 2017-11-21 | 中国石油大学(华东) | Additional low-temperature receiver type hot dry rock thermoelectric heat generation system and method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201332372Y (en) * | 2008-12-26 | 2009-10-21 | 汤文渊 | Residual heat thermoelectric power generation system using circulating liquid cooling |
| CN102487255A (en) * | 2010-12-06 | 2012-06-06 | 新奥科技发展有限公司 | Solar energy comprehensive utilization apparatus |
| CN103017279A (en) * | 2012-12-28 | 2013-04-03 | 上海交通大学 | Ground source heat-pipe heat exchange system adapting to load change in operation cycle and control method |
| CN103259458A (en) * | 2012-02-16 | 2013-08-21 | 王广武 | Solar thermoelectric power generation system |
| CN203734617U (en) * | 2014-03-18 | 2014-07-23 | 安徽工业大学 | Natural flow-type solar energy comprehensive utilization device |
| CN204103861U (en) * | 2014-06-19 | 2015-01-14 | 安徽旭腾光伏电力有限公司 | A kind of solar photoelectric light-heat comprehensive utilization assembly |
| CN204334473U (en) * | 2015-01-28 | 2015-05-13 | 安徽工业大学 | The both heat collecting device that a kind of solar energy composite utilizes |
| CN105276862A (en) * | 2015-09-14 | 2016-01-27 | 安徽建筑大学 | Net cage type surface water source heat exchanger |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960118B (en) * | 2006-11-22 | 2010-12-22 | 中国科学院电工研究所 | Power generation system of hybrid energy sources based on photovoltaic effect, and thermoelectric effect of solar energy |
| CN201878057U (en) * | 2010-12-16 | 2011-06-22 | 新奥科技发展有限公司 | Solar photovoltaic equipment with thermoeletric generators |
| CN102130106A (en) * | 2010-12-25 | 2011-07-20 | 紫光股份有限公司 | Solar cell capable of simultaneously performing photoelectric conversion and thermoelectric conversion |
| CN102647122B (en) * | 2012-05-15 | 2015-08-05 | 上海电力学院 | The temperature automatically controlled combined power generation device of photovoltaic-temperature difference |
| CN103904944A (en) * | 2012-12-24 | 2014-07-02 | 袁贵学 | Temperature differential power generation device by means of solar energy |
| CN103051250A (en) * | 2012-12-30 | 2013-04-17 | 青海天誉汇新能源开发有限公司 | Temperature reduction method of temperature difference power generation of photovoltaic assembly |
| CN103762939A (en) * | 2014-01-09 | 2014-04-30 | 常州大学 | Method and device for improving photovoltaic power generation efficiency of crystalline silicon battery module |
| CN204465413U (en) * | 2015-03-31 | 2015-07-08 | 段科 | A kind of wearable device charger based on solar energy, body temperature generating |
-
2016
- 2016-02-19 CN CN201610093167.6A patent/CN105529984A/en active Pending
- 2016-02-19 CN CN201610307636.XA patent/CN105958939A/en active Pending
- 2016-02-19 CN CN201610332704.8A patent/CN105932935A/en active Pending
- 2016-02-19 CN CN201610307564.9A patent/CN105958902A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201332372Y (en) * | 2008-12-26 | 2009-10-21 | 汤文渊 | Residual heat thermoelectric power generation system using circulating liquid cooling |
| CN102487255A (en) * | 2010-12-06 | 2012-06-06 | 新奥科技发展有限公司 | Solar energy comprehensive utilization apparatus |
| CN103259458A (en) * | 2012-02-16 | 2013-08-21 | 王广武 | Solar thermoelectric power generation system |
| CN103017279A (en) * | 2012-12-28 | 2013-04-03 | 上海交通大学 | Ground source heat-pipe heat exchange system adapting to load change in operation cycle and control method |
| CN203734617U (en) * | 2014-03-18 | 2014-07-23 | 安徽工业大学 | Natural flow-type solar energy comprehensive utilization device |
| CN204103861U (en) * | 2014-06-19 | 2015-01-14 | 安徽旭腾光伏电力有限公司 | A kind of solar photoelectric light-heat comprehensive utilization assembly |
| CN204334473U (en) * | 2015-01-28 | 2015-05-13 | 安徽工业大学 | The both heat collecting device that a kind of solar energy composite utilizes |
| CN105276862A (en) * | 2015-09-14 | 2016-01-27 | 安徽建筑大学 | Net cage type surface water source heat exchanger |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105958939A (en) | 2016-09-21 |
| CN105958902A (en) | 2016-09-21 |
| CN105529984A (en) | 2016-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2018176691A1 (en) | Oil and gas field distributive multi-functional complementary energy resource micro-grid system | |
| CN103426962A (en) | Novel distributed cogeneration system utilizing solar energy and chemical energy of fuel | |
| CN105958900A (en) | Solar power generation device | |
| CN105932935A (en) | Manufacturing method of solar power generation device | |
| CN105978450A (en) | Solar power generation device | |
| CN105958905A (en) | Solar power generation device | |
| CN105932933A (en) | Solar power generation apparatus | |
| CN105515501A (en) | Solar power generating device | |
| CN105811859A (en) | Fabrication method of solar power generation device | |
| CN105897122A (en) | Manufacturing method of solar power generation device | |
| CN105763140A (en) | Solar power generation system | |
| CN202495895U (en) | Semiconductor thermoelectric power generator | |
| CN105553388A (en) | Solar power generation device | |
| CN206300246U (en) | Hot water supply system | |
| CN204304878U (en) | Volt thermoelectric components is used up on solar building roof | |
| KR102615368B1 (en) | Heating and hot water supply system using direct solar hybrid PVT | |
| CN203434177U (en) | Novel distributed thermoelectricity combined production system utilizing solar energy and fuel chemical energy | |
| CN101840946B (en) | Secondary power-generating and heat-exchanging device for solar power heat-collecting device | |
| CN106642811A (en) | Novel solar heat pump system | |
| CN201601635U (en) | Secondary power generating and heat exchanging device of solar power heat collecting appliance | |
| CN106026855A (en) | Control method of solar generating apparatus | |
| Komilov | Performance and Design Analyses of Free Convection, Single Channel PV/T System Part B: Photovoltaic Performance and Efficiency Analysis |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160907 |
|
| WD01 | Invention patent application deemed withdrawn after publication |