CN105529984A - Solar generating set - Google Patents
Solar generating set Download PDFInfo
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- CN105529984A CN105529984A CN201610093167.6A CN201610093167A CN105529984A CN 105529984 A CN105529984 A CN 105529984A CN 201610093167 A CN201610093167 A CN 201610093167A CN 105529984 A CN105529984 A CN 105529984A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 220
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 167
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000010248 power generation Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000036760 body temperature Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- 230000005680 Thomson effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000008398 formation water Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24T—GEOTHERMAL COLLECTORS; GEOTHERMAL SYSTEMS
- F24T10/00—Geothermal collectors
- F24T10/10—Geothermal collectors with circulation of working fluids through underground channels, the working fluids not coming into direct contact with the ground
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- H02J3/383—
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/20—Systems characterised by their energy storage means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/10—Geothermal energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E70/00—Other energy conversion or management systems reducing GHG emissions
- Y02E70/30—Systems combining energy storage with energy generation of non-fossil origin
Abstract
The invention discloses a solar generating set which comprises a plurality of thin film solar cells, M N-type semiconductors, M P-type semiconductors, a heat conducting base, a storage battery unit, a controller unit, 4M temperature sensors, a water pump, N electric control valves, and N water pipes. Both the N-type semiconductors and the P-type semiconductors are of an I shape; diversion baffles are arranged in a staggered manner in a water storage cavity of the heat conducting base; the N water pipes have different lengths, and have a length range of 5m to 200m; the N-type semiconductors and the P-type semiconductors are arranged at intervals, and the adjacent N-type semiconductors and P-type semiconductors are connected in series; the plurality of thin film solar cells are connected in series, then are connected in series with the N-type semiconductors and the P-type semiconductors, and finally, charge the storage battery unit. According to the solar generating set disclosed by the invention, solar power generation and temperature difference power generation are effectively combined, a very effective technical scheme which utilizes solar energy and geothermal energy is provided, and power generation efficiency is higher.
Description
Technical field
The present invention relates to a kind of device of solar generating, belong to technical field of new energy power generation.
Background technology
Solar energy refers to the infrared radiant energy of the sun, and main manifestations is exactly the sunray often said, is generally at present used as to generate electricity or provides the energy for water heater.When fossil fuel reduces increasingly, solar energy has become the important component part that the mankind use the energy, and is constantly developed.The utilization of solar energy has photothermal deformation and opto-electronic conversion two kinds of modes, and solar power generation is a kind of emerging regenerative resource.Sensu lato solar energy also comprises tellurian wind energy, chemical energy, water energy etc.
Along with the development of industrial civilization, particularly Domestic Environment is seriously polluted, and haze weather happens occasionally, and main cause is that coal burning causes after deliberation, and therefore we are strongly more next for the demand of new forms of energy instantly.Traditional fossil energy can not meet the needs of current environment, in order to avoid the predicament of lack of energy and the aggravation of environmental pollution, current government supports energetically to development solar energy industry, should be a most important part new forms of energy development from current new forms of energy development solar energy.
Solar energy rich reserves, each second, the sun will be equivalent to the energy of 21,000,000,000 barrels of oil to earth conveying, was equivalent to the energy that the whole world consumes for a day.The solar energy resources of China is also very abundant, and except Guizhou Plateau some areas, most of China region is all the abundant area of solar energy resources, and current solar energy utilization ratio is less than 1/1000.Therefore have a high potential at China's Devoting Major Efforts To Developing solar energy.The utilization of solar energy is divided into " photo-thermal " and " photovoltaic " two kinds, and wherein light-heating type water heater is widely used in China.Photovoltaic is the forms of electricity generation of electric energy by light energy conversion, originates from " photovoltage phenomenon " before more than 100 year.The utilization of solar energy more refers to photovoltaic power generation technology at present.Photovoltaic power generation technology is divided into from net type and grid type two kinds according to the difference of load, and early stage photovoltaic power generation technology is limited by solar module cost factor, mainly based on small-power from net type, meet outlying district without electrical network residential electricity consumption problem.Along with the decline of photovoltaic module cost, the cost of photovoltaic generation constantly declines, and grid-connected type photovoltaic system progressively becomes main flow.
Thermoelectric generator, is a kind of solid state device of static state, does not have rotatable parts, and volume is little, the life-span is long, noiseless during work, and need not safeguard, becomes the focus of space power system research and development, greatly have stimulated the development of thermoelectric technology.The physical explanation of Thomson effect is exactly: in metal during non-uniform temperature, and the free electron of temperature eminence is larger than the free electron kinetic energy of temperature lower.As gas, can produce thermal diffusion when non-uniform temperature, therefore free electron is high-end to the diffusion of temperature low side from temperature, piles up, thus form electric field in conductor, just draw into an electrical potential difference at metal bar two ends in low-temperature end.The diffusion of this free electron is performed until till the thermal diffusion of electric field force to the effect of electronics and electronics balance.
How by solar power generation with thermo-electric generation is ingenious combines, solar cell is certain to produce heat in the process of generating in other words.If this heat is transported to thermoelectric generator, utilize thermo-electric generation effect to be electric energy by the thermal power transfer of solar power generation, the research article of current this respect is little.The patent No. is 2015202003803, invention and created name is: a kind of utility model patent of wearable device charger based on solar energy, body temperature generating proposes a kind of can generating by solar energy and the detailed technical scheme of thermo-electric generation, but one end, two ends of the N type semiconductor of the semiconductor temperature differential generating of this technical scheme and P type semiconductor is the waste heat utilizing solar power generation, the other end is the body temperature utilizing human body, although can realize thermo-electric generation, energy output is very limited.
Summary of the invention
The object of the present invention is to provide a kind of device of solar generating, this Blast Furnace Top Gas Recovery Turbine Unit (TRT) incorporates solar power generation and semiconductor temperature differential generating, one end of the semiconductor of semiconductor temperature differential generating and the end contact of solar cell, the other end is heat energy contiguously, and the large energy output of the two ends temperature difference of such semiconductor is large.
In order to realize above object, the technical solution adopted in the present invention is:
1, device of solar generating, is characterized in that, comprises multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
Described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
Multiple thin-film solar cells is arranged at the upper surface of N type semiconductor, P type semiconductor, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The lower surface insulated contact of the upper surface of described heat-conducting base and N type semiconductor, P type semiconductor;
The upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
Described N number of water pipe all perpendicular to ground, and is arranged at below ground;
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base;
The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously.
The technical scheme be more preferably, described controller unit adopts AT89S52 single-chip microcomputer.
More detailed technical scheme, the water inlet of described water pump can connect the delivery outlet of the electric control valve of each water pipe by the conversion equipment of a multiple input single output.
More detailed technical scheme, described electric control valve employing single-chip microcomputer can directly actuated electrically operated valve.
2, a kind of manufacture method of device of solar generating, it is characterized in that, comprise multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
The first step: described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
Second step: the upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
3rd step: multiple thin-film solar cells is bonded at the upper surface of N type semiconductor, P type semiconductor by heat conductive silica gel, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The upper surface of described heat-conducting base is bonded at the lower surface of N type semiconductor, P type semiconductor by heat conductive silica gel;
4th step: described N number of water pipe all perpendicular to ground, and is embedded in below ground; Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base; The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously.
3, a kind of control method of device of solar generating, it is characterized in that, comprise multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
Described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
The upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
Multiple thin-film solar cells is arranged at the upper surface of N type semiconductor, P type semiconductor, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The lower surface insulated contact of the upper surface of described heat-conducting base and N type semiconductor, P type semiconductor;
Described N number of water pipe all perpendicular to ground, and is arranged at below ground;
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base;
The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously;
Electric control valve be numbered i, i=1,2 ..., N;
Concrete control method:
The first step, controller unit controls starting mode of pump, then controls to open each electric control valve successively 5 minutes, then closes this electric control valve;
In the process that each electric control valve is opened, then the summation of the numerical value of all temperature sensor collections of the upper surface of N type semiconductor, P type semiconductor averages by controller unit, is designated as Mi; Then the summation of the numerical value of all temperature sensor collections of the lower surface of N type semiconductor, P type semiconductor averages by controller unit, is designated as Ni; Mi and Ni does poor taking absolute value and is designated as Xi, then preserves Xi;
Second step, controller unit controls the electric control valve opened corresponding to max{Xi}.
4, solar power system, is characterized in that, comprises multiple device of solar generating;
Described device of solar generating comprises multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
Described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
Multiple thin-film solar cells is arranged at the upper surface of N type semiconductor, P type semiconductor, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The lower surface insulated contact of the upper surface of described heat-conducting base and N type semiconductor, P type semiconductor;
The upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
Described N number of water pipe all perpendicular to ground, and is arranged at below ground;
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base;
The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously.
The secondary battery unit parallel connection of all device of solar generating connects electrical network by DC/AC unit afterwards.
Compared with prior art, the invention has the advantages that:
The first, solar power generation module and semi-conductor thermo-electric generation module are together in series, provide generating voltage and energy output, the second, utilization be all clean energy resource, be solar energy and geothermal energy respectively, 3rd, N type semiconductor, P type semiconductor are all in " work " font, and first, this design substantially increases the contact area of N type semiconductor, P type semiconductor and thin-film solar cells, heat-conducting base, secondly, N type semiconductor, P type semiconductor and thin-film solar cells, the contact-making surface of heat-conducting base no longer needs to arrange sheet metal and heat-conducting plate, make structure simpler, finally, N type semiconductor, although the heat conductivility of P type semiconductor is not as the good heat conductivity of conductor, but in the process of thermo-electric generation, N type semiconductor, the heat conductivility of P type semiconductor still exists, the heat energy of a final end face still can spread to another end face, and N type semiconductor, " work " font design of P type semiconductor can extend the diffusion time of heat energy greatly, thus greatly provide N type semiconductor, P type semiconductor thermo-electric generation efficiency,
4th, be crisscross arranged flow apron in the storage cavity of heat-conducting base, flow apron is separated in storage cavity and forms water stream channel, simultaneously there is interval in the top edge of flow apron and storage cavity top inner wall, the current of lower floor like this evenly spread along water stream channel Tortuous flow, the current on upper strata flow fast from the interval of top, the current of quick flowing play quick heat radiating effect, the current of Tortuous flow play buffering accumulation of energy even results, simultaneously levels carries out heat interaction, guarantees that thermal diffusion is carried out to fast but also stable and uniform not only;
5th; The length of N number of water pipe is not identical and be arranged at subsurface and be all connected with water pump, because underground water is constant temperature, and degree of depth different temperatures is different, such as when summer, outdoor temperature is high, and the temperature of underground water is low, when winter, outdoor temperature is low and the temperature of underground water is high, but when change in depth is larger, namely from macroscopic view, more deep water temperature is higher for underground water.From ground down often dark 100 meters, temperature approximately increases 2-3 degrees centigrade.The formation temperature of 5 ~ 10 meters below earth's surface does not just change with the change of outside atmosphere temperature, maintains 15 ~ 17 DEG C throughout the year.Like this due to N type semiconductor, upper surface and the lower surface of P type semiconductor are provided with temperature sensor, controller unit controls starting mode of pump, then the water in different water pipe is extracted in circulation, this time N type semiconductor, the temperature of the temperature sensor collection that the upper surface of P type semiconductor and lower surface are arranged does difference, when if water pump connects 20 meters of dark water pipes, temperature approach is maximum, so the water pump water pipe that just employing 20 meters is dark always supplies water, the generating efficiency of such thermo-electric generation is maximum, and the delivery port of heat-conducting base can connect water supply installation, such as water tank etc.
Accompanying drawing explanation
Fig. 1 is the structural representation of thin-film solar cells of the present invention, N type semiconductor P type semiconductor, a few part of heat-conducting base.
Fig. 2 is the control principle schematic diagram of water pipe of the present invention, water pump.
Fig. 3 is the block diagram of solar power system of the present invention.
Fig. 4 is heat dissipation base structural representation of the present invention.
Fig. 5 is A-A place cutaway view in Fig. 4.
Embodiment
Below in conjunction with accompanying drawing, invention is described in further detail.
Embodiment 1: device of solar generating, comprises multiple thin-film solar cells, 10 N type semiconductors, 10 P type semiconductors, heat-conducting base, secondary battery unit, controller unit, 40 temperature sensors, water pump, 10 electric control valves, 10 water pipes; The length of 10 water pipes is respectively 5 meters, 10 meters, 15 meters, 20 meters, 25 meters, 50 meters, 75 meters, 100 meters, 125 meters, 150 meters, is all arranged at below ground perpendicular to ground.N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre; Flow apron separates formation water stream channel in storage cavity, as shown in Figures 4 and 5; N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor; Multiple thin-film solar cells series connection, then connects with N type semiconductor and P type semiconductor, last accumulators unit charging; Multiple thin-film solar cells is arranged at the upper surface of N type semiconductor, P type semiconductor, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate; The lower surface insulated contact of the upper surface of described heat-conducting base and N type semiconductor, P type semiconductor; The upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit; Described N number of water pipe all perpendicular to ground, and is arranged at below ground; Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base; The IO port of the control end equal connection control device unit of electric control valve, such controller unit can control conducting and the closedown of each electrically operated valve, and controller unit controls startup and the stopping of water pump simultaneously.
Wherein, described controller unit adopts AT89S52 single-chip microcomputer.The water inlet of described water pump is the delivery outlet of the electric control valve being connected each water pipe by the conversion equipment of a multiple input single output.
Wherein, temperature sensor is arranged at the upper and lower surface of N type semiconductor, the upper and lower surface of P type semiconductor respectively, the data of the temperature sensor collection that upper surface is all are averaged, the data of the temperature sensor collection that lower surface is all are averaged, so latter two mean value gets difference, and when difference is maximum, thermo-electric generation is most effective.
Operation principle of the present invention illustrates: the length of multiple water pipe is not identical and be vertically installed in subsurface and be all connected with water pump, because underground water is constant temperature, and degree of depth different temperatures is different, such as when summer, outdoor temperature is high, and the temperature of underground water is low, solar light irradiation thin-film solar cells generating when daytime in summer, certain heat can be produced while generating, this part heat is delivered to N type semiconductor, the upper surface of P type semiconductor, as hot junction, and the temperature of underground water is lower, N type semiconductor is passed to by heat-conducting base, P type semiconductor lower surface, as cold junction, thus be beneficial to cold and hot end thermo-electric generation, otherwise when winter, when winter, outdoor temperature is low and the temperature of underground water is high.
When change in depth is larger, namely from macroscopic view, more deep water temperature is higher for underground water.From ground down often dark 100 meters, temperature approximately increases 2-3 degrees centigrade.The formation temperature of 5 ~ 10 meters below earth's surface does not just change with the change of outside atmosphere temperature, maintains 15 ~ 17 DEG C throughout the year.
As for why have employed 4M temperature sensor? reason is as follows: the numerical value of the temperature sensor collection of the upper surface of N type semiconductor, P type semiconductor is averaged to average with the numerical value of the temperature sensor collection of the lower surface of N type semiconductor, P type semiconductor and done difference, and difference larger thermo-electric generation efficiency is higher; It is more accurate that exact value of averaging difference judges.
As for why have employed multiple water pipe? reason is as follows: when summer, and underground water temperature is lower, but the underground water temperature near earth's surface is also higher, and when the degree of depth acquires a certain degree, water temperature can be more and more higher; When winter, underground water temperature can be higher, but the underground water temperature near earth's surface also can be lower, and when the degree of depth acquires a certain degree, water temperature can be more and more higher; Such water pump, by connecting multiple water pipe, needs can select that water pipe (namely the upper and lower surface temperature approach of N type semiconductor, P type semiconductor is maximum) being conducive to thermo-electric generation most when generating.
Controller unit controls starting mode of pump, then the water in different water pipe is extracted in circulation, this time N type semiconductor, the temperature of temperature sensor collection that arranges of the upper surface of P type semiconductor and lower surface does difference, when if water pump connects 20 meters of dark water pipes, temperature approach is maximum, and so the water pump water pipe that just employing 20 meters is dark always supplies water, and the generating efficiency of such thermo-electric generation is maximum, and the delivery port of heat-conducting base can connect water supply installation, such as water tank etc.
Wherein, N type semiconductor, P type semiconductor are all in " work " font, and first, this design substantially increases the contact area of N type semiconductor, P type semiconductor and thin-film solar cells, heat-conducting base, secondly, N type semiconductor, P type semiconductor and thin-film solar cells, the contact-making surface of heat-conducting base no longer needs to arrange sheet metal and heat-conducting plate, make structure simpler, finally, N type semiconductor, although the heat conductivility of P type semiconductor is not as the good heat conductivity of conductor, but in the process of thermo-electric generation, N type semiconductor, the heat conductivility of P type semiconductor still exists, the heat energy of a final end face still can spread to another end face, and N type semiconductor, " work " font design of P type semiconductor can extend the diffusion time of heat energy greatly, thus greatly provide N type semiconductor, P type semiconductor thermo-electric generation efficiency.
The manufacture method of device of solar generating, comprises multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
The first step: described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
Second step: the upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
3rd step: multiple thin-film solar cells is bonded at the upper surface of N type semiconductor, P type semiconductor by heat conductive silica gel, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The upper surface of described heat-conducting base is bonded at the lower surface of N type semiconductor, P type semiconductor by heat conductive silica gel;
4th step: described N number of water pipe all perpendicular to ground, and is embedded in below ground; Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base.The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously.
The control method of device of solar generating, it is characterized in that, comprise multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
Described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
The upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
Multiple thin-film solar cells is arranged at the upper surface of N type semiconductor, P type semiconductor, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The lower surface insulated contact of the upper surface of described heat-conducting base and N type semiconductor, P type semiconductor;
Described N number of water pipe all perpendicular to ground, and is arranged at below ground;
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base;
The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously.
Electric control valve be numbered i, i=1,2 ..., N;
Concrete control method:
The first step, controller unit controls starting mode of pump, then controls to open each electric control valve successively 5 minutes, then closes this electric control valve;
In the process that each electric control valve is opened, then the summation of the numerical value of all temperature sensor collections of the upper surface of N type semiconductor, P type semiconductor averages by controller unit, is designated as Mi; Then the summation of the numerical value of all temperature sensor collections of the lower surface of N type semiconductor, P type semiconductor averages by controller unit, is designated as Ni; Mi and Ni does poor taking absolute value and is designated as Xi, then preserves Xi;
Second step, controller unit controls the electric control valve opened corresponding to max{Xi}.(second step max{Xi} is that meaning of taking out maximum in the Xi by preservation, if max{Xi}=X5, be meant to the 5th electric control valve when opening, the upper and lower surface temperature gap of N type semiconductor, P type semiconductor is maximum).
Solar power system: the secondary battery unit parallel connection of each device of solar generating is connected electrical network by DC/AC unit afterwards, thus the function realizing solar power generation input electrical network.
Claims (4)
1. device of solar generating, is characterized in that, comprises multiple thin-film solar cells, a M N type semiconductor, a M P type semiconductor, heat-conducting base, secondary battery unit, controller unit, a 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe; Wherein, M >=6, N >=3;
Described N type semiconductor, P type semiconductor are all in " work " font;
Described heat-conducting base is square, and inside is provided with storage cavity; Be provided with the water inlet be connected with storage cavity in the left side of heat-conducting base, be provided with the delivery port be connected with storage cavity at the top of heat-conducting base; Between the front inner wall and rear side inwall of storage cavity, be staggeredly equipped with flow apron, and the water inlet direction of flow apron and water inlet is perpendicular; The top edge of flow apron and storage cavity top inner wall interval are between 1 ~ 2 centimetre;
The length of described N number of water pipe is not identical, and length range is between 5 meters to 200 meters;
Described N type semiconductor and P type semiconductor are spaced, and connect between adjacent N type semiconductor and P type semiconductor;
Described multiple thin-film solar cells series connection, then connect with N type semiconductor and P type semiconductor, last accumulators unit charging;
Multiple thin-film solar cells is arranged at the upper surface of N type semiconductor, P type semiconductor, and the contact-making surface of thin-film solar cells and N type semiconductor, P type semiconductor insulate;
The lower surface insulated contact of the outer surface of described heat-conducting base and N type semiconductor, P type semiconductor;
The upper surface of N type semiconductor, P type semiconductor and the equal set temperature transducer of lower surface, temperature sensor is electrically connected with controller unit;
Described N number of water pipe all perpendicular to ground, and is arranged at below ground;
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the delivery port of water pump connects the water inlet of heat-conducting base;
The IO port of the control end equal connection control device unit of described electric control valve, controller unit controls startup and the stopping of water pump simultaneously.
2. device of solar generating according to claim 1, is characterized in that, described controller unit adopts AT89S52 single-chip microcomputer.
3. device of solar generating according to claim 1, is characterized in that, the water inlet of described water pump can connect the delivery outlet of the electric control valve of each water pipe by the conversion equipment of a multiple input single output.
4. device of solar generating according to claim 1, is characterized in that, described electric control valve employing single-chip microcomputer can directly actuated electrically operated valve.
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| CN201610093167.6A CN105529984A (en) | 2016-02-19 | 2016-02-19 | Solar generating set |
| CN201610307636.XA CN105958939A (en) | 2016-02-19 | 2016-02-19 | Solar power generation device |
| CN201610332704.8A CN105932935A (en) | 2016-02-19 | 2016-02-19 | Manufacturing method of solar power generation device |
| CN201610307564.9A CN105958902A (en) | 2016-02-19 | 2016-02-19 | Control method of solar power generation device |
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| CN105958902A (en) | 2016-09-21 |
| CN105932935A (en) | 2016-09-07 |
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