CN105932933A - Solar power generation apparatus - Google Patents
Solar power generation apparatus Download PDFInfo
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- CN105932933A CN105932933A CN201610298312.4A CN201610298312A CN105932933A CN 105932933 A CN105932933 A CN 105932933A CN 201610298312 A CN201610298312 A CN 201610298312A CN 105932933 A CN105932933 A CN 105932933A
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- 238000010248 power generation Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 230
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 169
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 239000007921 spray Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 3
- 230000008859 change Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000005611 electricity Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 241001424688 Enceliopsis Species 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 206010016807 Fluid retention Diseases 0.000 description 1
- 230000005680 Thomson effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/36—Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S30/00—Arrangements for moving or orienting solar heat collector modules
- F24S30/40—Arrangements for moving or orienting solar heat collector modules for rotary movement
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24T—GEOTHERMAL COLLECTORS; GEOTHERMAL SYSTEMS
- F24T10/00—Geothermal collectors
- F24T10/10—Geothermal collectors with circulation of working fluids through underground channels, the working fluids not coming into direct contact with the ground
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24T—GEOTHERMAL COLLECTORS; GEOTHERMAL SYSTEMS
- F24T10/00—Geothermal collectors
- F24T10/10—Geothermal collectors with circulation of working fluids through underground channels, the working fluids not coming into direct contact with the ground
- F24T10/13—Geothermal collectors with circulation of working fluids through underground channels, the working fluids not coming into direct contact with the ground using tube assemblies suitable for insertion into boreholes in the ground, e.g. geothermal probes
- F24T10/17—Geothermal collectors with circulation of working fluids through underground channels, the working fluids not coming into direct contact with the ground using tube assemblies suitable for insertion into boreholes in the ground, e.g. geothermal probes using tubes closed at one end, i.e. return-type tubes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/30—Supporting structures being movable or adjustable, e.g. for angle adjustment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/30—Supporting structures being movable or adjustable, e.g. for angle adjustment
- H02S20/32—Supporting structures being movable or adjustable, e.g. for angle adjustment specially adapted for solar tracking
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/42—Cooling means
- H02S40/425—Cooling means using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S30/00—Arrangements for moving or orienting solar heat collector modules
- F24S2030/10—Special components
- F24S2030/13—Transmissions
- F24S2030/135—Transmissions in the form of threaded elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/10—Geothermal energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
- Y02E10/47—Mountings or tracking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
Abstract
The invention disclose a solar power generation system which includes thin-film solar batteries, N-type semiconductors, P-type semiconductors, a heat conduction pedestal, a storage battery unit, a controller unit, a temperature sensor, a water pump, an electric controlled valve, a water pipe, electric telescopic rods, a support column, a control case, a screw threaded telescopic rod, a support base plate and a sensing head. Each N-type semiconductor and each P-type semiconductor both assume an "H" shape. A water storage cavity of the heat conduction pedestal is provided with a spray head. Two electric telescopic rods and one support column are supported between the heat conduction pedestal and the support base plate. The N-type semiconductors and the P-type semiconductors are arranged at intervals and the adjacent N-type semiconductor and the P-type semiconductor are in serial connection. The plurality of thin-film solar batteries are in serial connection, are then in serial connection to the N-type semiconductors and the P-type semiconductors, and finally supply power to the storage battery unit. According to the invention, the system efficiently combines solar power generation and thermoelectric power generation, provides a very effective technical solution of using solar energy and thermal energy, and has high power generation efficiency.
Description
The application is filing date 2016-02-24, Application No. 2016101001640, invention entitled one
The divisional application of the patent application of device of solar generating.
Technical field
The present invention relates to a kind of device of solar generating, belong to technical field of new energy power generation.
Background technology
Solar energy, as a kind of important clean energy resource, utilizes the solar power station of solar energy, both can be large-scale
Power station, it is also possible to be household small-size power station.Large-scale power station is generally of substantial amounts of solar power generation unit, and family
As long as having one or two generator unit with small hydropower station.The collection solar energy of each solar power generation unit
Equipment is mainly some solar panels, and these solar panels need to be supported on ground by support means
On.Further, due to regional difference, Four seasons change and the sun irradiation angle change of different time in every day
Reason, the angle of solar panel needs to adjust, could increase the efficiency of generating.Angle of solar cell panel
Adjustment both included that the elevation angle adapting to Four seasons change adjusted, the angle tune of sooner or later change in also including being suitable for a day
Whole.
But, at support and the angular adjustment apparatus (also known as solar bracket) of the existing solar panel of China
In, the standard specifications that neither one is complete and regular, can support be divided into: 1, tracking support with double shafts,
Can either adapt to Four seasons change, it is also possible to adapt to the change of intraday morning and evening, this equipment uses single vertical mostly
Post supports total weight, the less stable of structure, and it is little that large-scale solar power station uses；2, single shaft
Follow the tracks of support, only the sun anglec of rotation is tracked, the angle of time change sooner or later in i.e. carrying out adapting to a day
Adjusting, cost is the most higher, and control system and operation are also at feedback and evaluation, and maintenance cost is higher；3, solid
Fixed pattern support, is different according to geographical position, sets the meansigma methods of year solar illumination angle, determine that solar energy is sent out
A kind of fixed support of the setting angle of electric unit, input cost is low, but generated energy is on the low side.To sum up, therefore need
The support designing a kind of solar panel that can consider generating efficiency and equipment cost is adjusted with angle
Engagement positions.
Thermoelectric generator, is the solid state device of a kind of static state, does not has rotatable parts, and volume is little, the life-span is long, work
Noiseless when making, and need not safeguard, become the focus of space power system research and development, significantly have stimulated thermoelectric technology
Development.The physical explanation of Thomson effect is exactly: in metal during non-uniform temperature, the freedom of temperature eminence
Electronics is bigger than the free electron kinetic energy of temperature lower.As gas, thermal diffusion can be produced when non-uniform temperature,
Therefore free electron spreads to temperature low side from temperature is high-end, piles up in low-temperature end, thus shape in conductor
Become electric field, just draw into an electric potential difference at metal bar two ends.The diffusion of this free electron is performed until electricity
Till the effect of electronics is balanced by field force with the thermal diffusion of electronics.How by skilful to solar electrical energy generation and thermo-electric generation
Wonderful combine, that is solaode is certain to produce heat during generating.If by this
Heat transports to thermoelectric generator, utilizes thermo-electric generation effect the heat energy of solar electrical energy generation to be converted to electric energy, at present
The research article of this respect is little.
Summary of the invention
The technical problem to be solved in the present invention is that the heat energy that solar electrical energy generation produces can not quickly transmit and utilize, and
Generate electricity is inefficient.
In order to solve above-mentioned technical problem, the invention provides a kind of device of solar generating, including multiple thin film
Solaode, M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, control
Device unit, 4M temperature sensor, water pump, N number of electric control valve, N number of water pipe, two electric expansion bars,
A piece support column, a control chamber, a screw telescopic bar, one piece of support baseboard and a truncated pyramid shape
Sensing head；Wherein, M >=6, N >=3, conical surface number >=6 of truncated pyramid shape；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar；
The solar panel of area equation it is equipped with on the truncation face of described sensing head and each conical surface；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor
Electrically connect with controller unit；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, controller unit control simultaneously
The startup of controlling the water circulation pump and stopping.
As the scheme that limits further of the present invention, described controller unit uses AT89S52 single-chip microcomputer.
As the scheme that limits further of the present invention, the water inlet of described water pump can pass through a multi input list
The conversion equipment of output connects the delivery outlet of the electric control valve of each water pipe.
As the scheme that limits further of the present invention, described electric control valve employing single-chip microcomputer can be directly actuated
Electrically operated valve.
Present invention also offers the manufacture method of a kind of device of solar generating, including multiple thin film solars electricity
Pond, M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit,
4M temperature sensor, water pump, N number of electric control valve, N number of water pipe, two electric expansion bars, supports
Post, a control chamber, a screw telescopic bar, one piece of support baseboard and the sensing head of a truncated pyramid shape；
Wherein, M >=6, N >=3, conical surface number >=6 of truncated pyramid shape；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Concretely comprise the following steps:
Step 1, described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor
And connect between P-type semiconductor；Described multiple thin-film solar cells series connection, then with N-type semiconductor and
P-type semiconductor is connected, and finally charges to secondary battery unit；
Step 2, N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, warm
Degree sensor electrically connects with controller unit；
Step 3, multiple thin-film solar cells are bonded at N-type semiconductor, P-type semiconductor by heat conductive silica gel
Upper surface, and thin-film solar cells and N-type semiconductor, the contact surface insulation of P-type semiconductor；Described
The upper surface of heat-conducting base is bonded at the lower surface of N-type semiconductor, P-type semiconductor by heat conductive silica gel；
Step 4, described N number of water pipe is each perpendicular to ground, and is embedded in below ground；Described water pipe divides
Tong Guo not connect the water inlet of water pump by electric control valve, the outlet of water pump connects the water inlet of heat-conducting base；Described
The end that controls of electric control valve be all connected with the I/O port of controller unit, controller unit controls water pump simultaneously
Start and stop；
Step 5, described heat-conducting base is square, and inside is provided with storage cavity；Lower section at heat-conducting base
It is provided with the water inlet being connected with storage cavity, is provided with going out of being connected with storage cavity at the top of heat-conducting base
The mouth of a river；In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with one
Spray head, each spray head is all connected with the water inlet of heat-conducting base；
Step 6, two described electric expansion bars and support column be supported in heat-conducting base and support baseboard it
Between, and lay respectively at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively
On heat-conducting base and support baseboard；The lower end of support column is fixedly mounted on support baseboard, upper end globular hinge
On heat-conducting base；
Step 7, described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on screw telescopic bar
Top；The solaode of area equation it is equipped with on the truncation face of described sensing head and each conical surface
Plate；
Step 8, is provided with voltage collector and arithmetic processor in described control chamber；Each sun of sensing head
Can all be connected with the signals collecting end of voltage collector by cell panel；At the signal output part of voltage collector and computing
The signal input part of reason device is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar.
Present invention also offers the control method of a kind of device of solar generating, including multiple thin film solars electricity
Pond, M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit,
4M temperature sensor, water pump, N number of electric control valve, N number of water pipe, two electric expansion bars, supports
Post, a control chamber, a screw telescopic bar, one piece of support baseboard and the sensing head of a truncated pyramid shape；
Wherein, M >=6, N >=3, conical surface number >=6 of truncated pyramid shape；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar；
The solar panel of area equation it is equipped with on the truncation face of described sensing head and each conical surface；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor
Electrically connect with controller unit；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, controller unit control simultaneously
The startup of controlling the water circulation pump and stopping；The numbered i, i=1,2 of electric control valve ..., N；
Concrete control method is:
Step 1, controller unit controls starting mode of pump, then controls to open each electric control valve successively 5 minutes,
It is then shut off this electric control valve；During each electric control valve is opened, N-type is partly led by controller unit
Body, P-type semiconductor upper surface all temperature sensor collections numerical value summation then average, be designated as
Mi；The number that all temperature sensors of N-type semiconductor, the lower surface of P-type semiconductor are gathered by controller unit
Then value summation averages, and is designated as Ni；Mi Yu Ni makees poor taking absolute value and is designated as Xi, then preserves Xi；
Step 2, controller unit controls to open the electric control valve corresponding to max{Xi}；
Step 3, voltage collector gathers the voltage of each solar panel respectively, and by arithmetic processor root
Control the collapsing length of two electric expansion bars according to each magnitude of voltage, thus control multiple thin-film solar cells
Towards angle.
Present invention also offers a kind of solar power system, including multiple device of solar generating；
Described device of solar generating includes multiple thin-film solar cells, M N-type semiconductor, M P
Type quasiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature sensor, water pump, N
Individual electric control valve, N number of water pipe, two electric expansion bars, support column, control chamber, screw threads
Expansion link, one piece of support baseboard and the sensing head of a truncated pyramid shape；Wherein, M >=6, N >=3, truncation
Conical surface number >=6 of pyramid；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar；
The solar panel of area equation it is equipped with on the truncation face of described sensing head and each conical surface；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor
Electrically connect with controller unit；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, controller unit control simultaneously
The startup of controlling the water circulation pump and stopping；
Electrical network is connected by DC/AC unit after the secondary battery unit parallel connection of all device of solar generating.
Compared with prior art, it is an advantage of the current invention that:
First, solar electrical energy generation module is together in series with semi-conductor thermo-electric generation module, it is provided that generating voltage
And generated energy；
Second, utilization is all clean energy resource, is solar energy and geothermal energy respectively；
3rd, N-type semiconductor, P-type semiconductor are all in " work " font, and first, this design is greatly improved
N-type semiconductor, P-type semiconductor and thin-film solar cells, the contact area of heat-conducting base；Secondly, N
Type quasiconductor, P-type semiconductor and thin-film solar cells, the contact surface of heat-conducting base are no longer necessary to arrange metal
Sheet and heat-conducting plate so that structure is simpler, finally, though the heat conductivility of N-type semiconductor, P-type semiconductor
So not as the good heat conductivity of conductor, but during thermo-electric generation, N-type semiconductor, P-type semiconductor
Heat conductivility still exist, the heat energy of a final end face still can spread to another end face, and N
Type quasiconductor, " work " font design of P-type semiconductor can be greatly prolonged diffusion time of heat energy, thus greatly
N-type semiconductor, P-type semiconductor thermo-electric generation efficiency are provided greatly；
4th, spray head is set in the storage cavity of heat-conducting base, and spray head is partly led corresponding to each N-type
Body and P-type semiconductor corresponding position, make N-type semiconductor keep consistent with the coolant-temperature gage at P-type semiconductor,
Avoid the occurrence of the unbalanced problem of temperature, and in storage cavity can water-retention, play the effect of buffering thermal diffusion,
Further ensure that the uniformity of heat radiation；
5th, the length of N number of water pipe differs and is arranged at subsurface and is all connected with water pump, due to subsoil water
Being constant temperature, and degree of depth different temperatures is different, such as the when of summer, outdoor temperature is high, and the temperature of subsoil water
Spending low, the when of winter, outdoor temperature is low and the temperature of subsoil water high, but when change in depth is bigger, i.e.
For macroscopic view, subsoil water more deep water temperature is the highest.From ground the deepest 100 meters, temperature increases about
2-3 degrees centigrade.The formation temperature of 5～10 meters below earth's surface does not becomes with the change of outside atmosphere temperature
Change, maintain 15～17 DEG C throughout the year.So equal due to the upper and lower surface of N-type semiconductor, P-type semiconductor
Being provided with temperature sensor, controller unit controls starting mode of pump, the then water in the different water pipe of circulation extraction,
This time N-type semiconductor, P-type semiconductor upper and lower surface arrange temperature sensor gather temperature
Degree does difference, if water pump connects 20 meters of deep water pipes, temperature approach is maximum, then water pump just has been used up
20 meters of deep water pipes supply water, and the generating efficiency of such thermo-electric generation is maximum, and the outlet of heat-conducting base
Water supply installation, such as water tank etc. can be connected；
6th, utilize the sunray intensity in sensing head Real-time Collection all directions, and will by voltage collector
The voltage signal gathered is sent to arithmetic processor and processes, then by arithmetic processor according to setup control rule
Drive two electric expansion bars to carry out expanding-contracting action so that multiple thin-film solar cells towards angle begin
There is optimal sunray receiving efficiency eventually；
7th, utilize two electric expansion bars and a support column to realize bikini and support, be effectively increased support
Stability, and support column is that lower end is fixed, the semi-movable of upper end globular hinge connects, and electric expansion bar is
The complete movable connection of upper and lower side globular hinge, support column plays the effect that single-point support is stable, and two electronic stretches
Contracting bar plays the effect of two point angular adjustment, cooperate jointly complete multiple thin-film solar cells towards angle
Degree regulation；
8th, utilize screw telescopic bar can conveniently regulate the height of sensing head, prevent multiple thin film solar electricity
Pond regulation towards during block the light of sensing head, make sensing head have more preferable adaptation ability.
Accompanying drawing explanation
Fig. 1 is the device of solar generating structural representation of the present invention；
Fig. 2 is the sensing head plan structure schematic diagram of the present invention；
Fig. 3 is the control principle schematic diagram of the water pipe of the present invention of the present invention, water pump；
Fig. 4 is the block diagram of the solar power system of the present invention；
Fig. 5 is the heat dissipation base structural representation of the present invention；
Fig. 6 is sectional view at A-A in Fig. 5.
Detailed description of the invention
Below in conjunction with the accompanying drawings invention is described in further detail.
As shown in figures 1 to 6, a kind of device of solar generating of the present invention, including multiple thin-film solar cells,
10 N-type semiconductors, 10 P-type semiconductors, heat-conducting base, secondary battery unit, controller unit, 40
Individual temperature sensor, water pump, 10 electric control valves, 10 water pipes, two electric expansion bars, supports
Post, a control chamber, a screw telescopic bar, one piece of support baseboard and the sensing head of a truncated pyramid shape；
Wherein, the conical surface number of truncated pyramid shape is 8；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；As illustrated in Figures 5 and 6；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar,
The connecting line of sensing head is located in screw telescopic bar；On the truncation face of described sensing head and each conical surface all
It is provided with the solar panel of area equation；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, length range between 5 meters to 200 meters, 10 water pipes
Length be respectively 5 meters, 10 meters, 15 meters, 20 meters, 25 meters, 50 meters, 75 meters, 100 meters, 125 meters,
150 meters, it is each perpendicular to ground and is arranged at below ground；
N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and P-type semiconductor
Between connect；Multiple thin-film solar cells are connected, and then connect with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；Multiple thin-film solar cells be arranged at N-type semiconductor, P-type semiconductor upper
Surface, and thin-film solar cells and N-type semiconductor, the contact surface insulation of P-type semiconductor；Described leads
The upper surface of hot base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；N-type semiconductor, P
The upper and lower surface of type quasiconductor is respectively provided with temperature sensor, and temperature sensor is electrically connected with controller unit
Connect；Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；Described water pipe passes through respectively
Electric control valve connects the water inlet of water pump, and the outlet of water pump connects the water inlet of heat-conducting base；Electric control valve
Controlling end and be all connected with the I/O port of controller unit, such controller unit can control each electrically operated valve
Be turned on and off, controller unit controls the startup of water pump and stopping simultaneously.
Wherein, described controller unit uses AT89S52 single-chip microcomputer.The water inlet of described water pump is to pass through
The conversion equipment of one multiple input single output connects the delivery outlet of the electric control valve of each water pipe.
Wherein, temperature sensor is respectively arranged at the upper following table of the upper and lower surface of N-type semiconductor, P-type semiconductor
Face, the data of upper surface all of temperature sensor collection average, and all of temperature sensor of lower surface is adopted
The data of collection are averaged, and so latter two meansigma methods takes difference, and during difference maximum, thermo-electric generation efficiency is the highest.
Operation principle of the present invention illustrates: the length of multiple water pipes differs and be vertically installed in subsurface and all
Being connected with water pump, owing to subsoil water is constant temperature, and degree of depth different temperatures is different, such as room when of summer
Outer temperature is high, and the temperature of subsoil water is low, sunlight thin-film solar cells generating when of daytime in summer,
Certain heat can be produced while generating, this partial heat be delivered to N-type semiconductor, P-type semiconductor upper
Surface, as hot junction, and the temperature of subsoil water is relatively low, passes to N-type semiconductor, p-type by heat-conducting base
Quasiconductor lower surface, as cold end, thus the most cold and hot end thermo-electric generation；Otherwise the when of winter, the winter
It when outdoor temperature low and the temperature of subsoil water high.
When change in depth is bigger, i.e. for macroscopic view, subsoil water more deep water temperature is the highest.From ground down
The deepest 100 meters, temperature increases about 2-3 degrees centigrade.The formation temperature of 5～10 meters below earth's surface is the most not
Change with the change of outside atmosphere temperature, maintain 15～17 DEG C throughout the year.
As for why have employed 4M temperature sensor？Reason is as follows: N-type semiconductor, P-type semiconductor
The numerical value of the temperature sensor collection of upper surface is averaged and N-type semiconductor, the lower surface of P-type semiconductor
The numerical value of temperature sensor collection is averaged and is done difference, and difference the biggest thermo-electric generation efficiency is the highest；Average
It is more accurate that exact value difference judges.
As for why have employed multiple water pipe？Reason is as follows: the when of summer, and underground water temperature is relatively low, but
The underground water temperature being proximate to earth's surface is the highest, when the degree of depth reaches to a certain degree, and water temperature can be more and more higher；Winter
It when, underground water temperature can be higher, but also can be relatively low near the underground water temperature on earth's surface, when the degree of depth reaches
To a certain extent, water temperature can be more and more higher；So water pump is by connecting multiple water pipes, and needing can the when of generating
To select that water pipe (the i.e. upper and lower surface of N-type semiconductor, P-type semiconductor most beneficial for thermo-electric generation
Temperature approach is maximum).
Controller unit controls starting mode of pump, the then water in the different water pipe of circulation extraction, this time N-type half
The temperature of the temperature sensor collection that conductor, the upper and lower surface of P-type semiconductor are arranged does difference, if
When water pump connects 20 meters of deep water pipes, temperature approach is maximum, then water pump just has been used up 20 meters of deep water pipes and supplies
Water, the generating efficiency of such thermo-electric generation is maximum, and the outlet of heat-conducting base can connect water supply installation,
Such as water tank etc..
Wherein, N-type semiconductor, P-type semiconductor are all in " work " font, and first, this design is greatly improved
N-type semiconductor, P-type semiconductor and thin-film solar cells, the contact area of heat-conducting base；Secondly, N
Type quasiconductor, P-type semiconductor and thin-film solar cells, the contact surface of heat-conducting base are no longer necessary to arrange metal
Sheet and heat-conducting plate so that structure is simpler, finally, though the heat conductivility of N-type semiconductor, P-type semiconductor
So not as the good heat conductivity of conductor, but during thermo-electric generation, N-type semiconductor, P-type semiconductor
Heat conductivility still exist, the heat energy of a final end face still can spread to another end face, and N
Type quasiconductor, " work " font design of P-type semiconductor can be greatly prolonged diffusion time of heat energy, thus greatly
Improve greatly N-type semiconductor, P-type semiconductor thermo-electric generation efficiency.
When carrying out the attitude angular adjustment of device of solar generating, by 9 solar panels on sensing head
Receive the sunray on correspondence direction respectively, voltage collector gather the electricity of each solar panel respectively
Pressure, and controlled the collapsing length of two electric expansion bars according to each magnitude of voltage by arithmetic processor, thus control
Multiple thin-film solar cells towards angle, first arithmetic processor carries out size to the magnitude of voltage on each face
Sequence, selects the maximum face of magnitude of voltage as towards face, thus controls two electric expansion bars and carry out stretching of correspondence
Contracting controls.
Present invention also offers the manufacture method of a kind of device of solar generating, including multiple thin film solars electricity
Pond, M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit,
4M temperature sensor, water pump, N number of electric control valve, N number of water pipe, two electric expansion bars, supports
Post, a control chamber, a screw telescopic bar, one piece of support baseboard and the sensing head of a truncated pyramid shape；
Wherein, M >=6, N >=3, conical surface number >=6 of truncated pyramid shape；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Concretely comprise the following steps:
Step 1, described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor
And connect between P-type semiconductor；Described multiple thin-film solar cells series connection, then with N-type semiconductor and
P-type semiconductor is connected, and finally charges to secondary battery unit；
Step 2, N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, warm
Degree sensor electrically connects with controller unit；
Step 3, multiple thin-film solar cells are bonded at N-type semiconductor, P-type semiconductor by heat conductive silica gel
Upper surface, and thin-film solar cells and N-type semiconductor, the contact surface insulation of P-type semiconductor；Described
The upper surface of heat-conducting base is bonded at the lower surface of N-type semiconductor, P-type semiconductor by heat conductive silica gel；
Step 4, described N number of water pipe is each perpendicular to ground, and is embedded in below ground；Described water pipe divides
Tong Guo not connect the water inlet of water pump by electric control valve, the outlet of water pump connects the water inlet of heat-conducting base；Described
The end that controls of electric control valve be all connected with the I/O port of controller unit, controller unit controls water pump simultaneously
Start and stop；
Step 5, described heat-conducting base is square, and inside is provided with storage cavity；Lower section at heat-conducting base
It is provided with the water inlet being connected with storage cavity, is provided with going out of being connected with storage cavity at the top of heat-conducting base
The mouth of a river；In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with one
Spray head, each spray head is all connected with the water inlet of heat-conducting base；
Step 6, two described electric expansion bars and support column be supported in heat-conducting base and support baseboard it
Between, and lay respectively at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively
On heat-conducting base and support baseboard；The lower end of support column is fixedly mounted on support baseboard, upper end globular hinge
On heat-conducting base；
Step 7, described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on screw telescopic bar
Top；The solaode of area equation it is equipped with on the truncation face of described sensing head and each conical surface
Plate；
Step 8, is provided with voltage collector and arithmetic processor in described control chamber；Each sun of sensing head
Can all be connected with the signals collecting end of voltage collector by cell panel；At the signal output part of voltage collector and computing
The signal input part of reason device is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar.
Present invention also offers the control method of a kind of device of solar generating, including multiple thin film solars electricity
Pond, M N-type semiconductor, M P-type semiconductor, heat-conducting base, secondary battery unit, controller unit,
4M temperature sensor, water pump, N number of electric control valve, N number of water pipe, two electric expansion bars, supports
Post, a control chamber, a screw telescopic bar, one piece of support baseboard and the sensing head of a truncated pyramid shape；
Wherein, M >=6, N >=3, conical surface number >=6 of truncated pyramid shape；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar；
The solar panel of area equation it is equipped with on the truncation face of described sensing head and each conical surface；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor
Electrically connect with controller unit；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, controller unit control simultaneously
The startup of controlling the water circulation pump and stopping；The numbered i, i=1,2 of electric control valve ..., N；
Concrete control method is:
Step 1, controller unit controls starting mode of pump, then controls to open each electric control valve successively 5 minutes,
It is then shut off this electric control valve；During each electric control valve is opened, N-type is partly led by controller unit
Body, P-type semiconductor upper surface all temperature sensor collections numerical value summation then average, be designated as
Mi；The number that all temperature sensors of N-type semiconductor, the lower surface of P-type semiconductor are gathered by controller unit
Then value summation averages, and is designated as Ni；Mi Yu Ni makees poor taking absolute value and is designated as Xi, then preserves Xi；
Step 2, controller unit controls to open the electric control valve corresponding to max{Xi}；
Step 3, voltage collector gathers the voltage of each solar panel respectively, and by arithmetic processor root
Control the collapsing length of two electric expansion bars according to each magnitude of voltage, thus control multiple thin-film solar cells
Towards angle.
Present invention also offers a kind of solar power system, including multiple device of solar generating；
Described device of solar generating includes multiple thin-film solar cells, M N-type semiconductor, M P
Type quasiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature sensor, water pump, N
Individual electric control valve, N number of water pipe, two electric expansion bars, support column, control chamber, screw threads
Expansion link, one piece of support baseboard and the sensing head of a truncated pyramid shape；Wherein, M >=6, N >=3, truncation
Conical surface number >=6 of pyramid；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar；
The solar panel of area equation it is equipped with on the truncation face of described sensing head and each conical surface；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor
Electrically connect with controller unit；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, controller unit control simultaneously
The startup of controlling the water circulation pump and stopping；
Electrical network is connected by DC/AC unit after the secondary battery unit parallel connection of all device of solar generating.
Claims (1)
1. a solar power system, including multiple device of solar generating；
Described device of solar generating includes multiple thin-film solar cells, M N-type semiconductor, M P
Type quasiconductor, heat-conducting base, secondary battery unit, controller unit, 4M temperature sensor, water pump, N
Individual electric control valve, N number of water pipe, two electric expansion bars, support column, control chamber, screw threads
Expansion link, one piece of support baseboard and the sensing head of a truncated pyramid shape；Wherein, M >=6, N >=3, truncation
Conical surface number >=6 of pyramid；
Described N-type semiconductor, P-type semiconductor are all in " work " font；
Described heat-conducting base is square, and inside is provided with storage cavity；It is provided with in the lower section of heat-conducting base and stores up
The water inlet that water cavity is connected, is provided with the outlet being connected with storage cavity at the top of heat-conducting base；?
In storage cavity and be positioned at each N-type semiconductor and P-type semiconductor corresponding position is equipped with a spray head,
Each spray head is all connected with the water inlet of heat-conducting base；
Two described electric expansion bars and a support column are supported between heat-conducting base and support baseboard, and point
It is not positioned at three apex of equilateral triangle；The two ends up and down of electric expansion bar globular hinge respectively is at the bottom of heat conduction
On seat and support baseboard；The lower end of support column is fixedly mounted on support baseboard, and upper end globular hinge is at the bottom of heat conduction
On seat；
Described screw telescopic bar is vertically installed on control chamber, and sensing head is arranged on the top of screw telescopic bar；
The solar panel of area equation it is equipped with on the truncation face of described sensing head and each conical surface；
Voltage collector and arithmetic processor it is provided with in described control chamber；Each solar panel of sensing head
All it is connected with the signals collecting end of voltage collector；The signal output part of voltage collector and the letter of arithmetic processor
Number input is connected；The signal output part of arithmetic processor is connected with the control end of electric expansion bar；
The length of described N number of water pipe differs, and length range is between 5 meters to 200 meters；
Described N-type semiconductor and P-type semiconductor are spaced, and adjacent N-type semiconductor and p-type are partly
Connect between conductor；
Described multiple thin-film solar cells series connection, then connects with N-type semiconductor and P-type semiconductor,
Charge to secondary battery unit afterwards；
Multiple thin-film solar cells are arranged at the upper surface of N-type semiconductor, P-type semiconductor, and thin film is too
Sun can battery and N-type semiconductor, the contact surface insulation of P-type semiconductor；
The upper surface of described heat-conducting base and N-type semiconductor, the lower surface insulated contact of P-type semiconductor；
N-type semiconductor, the upper and lower surface of P-type semiconductor are respectively provided with temperature sensor, temperature sensor
Electrically connect with controller unit；
Described N number of water pipe is each perpendicular to ground, and is arranged at below ground；
Described water pipe connects the water inlet of water pump respectively by electric control valve, and the outlet of water pump connects at the bottom of heat conduction
The water inlet of seat；
The end that controls of described electric control valve is all connected with the I/O port of controller unit, controller unit control simultaneously
The startup of controlling the water circulation pump and stopping；
Electrical network is connected by DC/AC unit after the secondary battery unit parallel connection of all device of solar generating.
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| CN201610297155.5A Pending CN105915159A (en) | 2016-02-24 | 2016-02-24 | Manufacturing method of solar energy generation device |
| CN201610296665.0A Pending CN105978448A (en) | 2016-02-24 | 2016-02-24 | Solar power generator |
| CN201610298312.4A Pending CN105932933A (en) | 2016-02-24 | 2016-02-24 | Solar power generation apparatus |
| CN201610297204.5A Pending CN105932962A (en) | 2016-02-24 | 2016-02-24 | Solar power generation apparatus |
| CN201610297231.2A Pending CN105897153A (en) | 2016-02-24 | 2016-02-24 | Solar electricity generation device |
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| CN107728651A (en) * | 2017-11-22 | 2018-02-23 | 烟台大学 | A kind of method that faceted pebble type solar azimuth automatic tracing instrument and control solar panels turn to |
| CN110350851A (en) * | 2019-06-24 | 2019-10-18 | 安徽鼎博新能源科技发展有限公司 | A kind of photovoltaic module |
| CN113184127B (en) * | 2021-06-08 | 2021-11-23 | 中广核新能源蚌埠有限公司 | Floating structure of water surface photovoltaic power station and construction process thereof |
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Also Published As
| Publication number | Publication date |
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| CN105634402A (en) | 2016-06-01 |
| CN105932962A (en) | 2016-09-07 |
| CN105897153A (en) | 2016-08-24 |
| CN105978448A (en) | 2016-09-28 |
| CN105915173A (en) | 2016-08-31 |
| CN105915159A (en) | 2016-08-31 |
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