CN105932100A - Preparation method of solar battery - Google Patents
Preparation method of solar battery Download PDFInfo
- Publication number
- CN105932100A CN105932100A CN201610334115.3A CN201610334115A CN105932100A CN 105932100 A CN105932100 A CN 105932100A CN 201610334115 A CN201610334115 A CN 201610334115A CN 105932100 A CN105932100 A CN 105932100A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- preparation
- solaode
- silver
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052709 silver Inorganic materials 0.000 claims abstract description 28
- 239000004332 silver Substances 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 36
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 18
- 239000011259 mixed solution Substances 0.000 claims description 9
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 235000008216 herbs Nutrition 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- -1 polyethylene pyrrole Polymers 0.000 claims description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 abstract description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 abstract 3
- 230000001419 dependent effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 8
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 8
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 8
- 230000009466 transformation Effects 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a solar battery, and belongs to the technical field of solar batteries. The method comprises the following steps: 1) selecting a P-type silicon as a silicon chip, and etching on the frontage of the silicon chip; 2) diffusing on the frontage of the silicon chip to form a N-type emitting electrode; 3) removing phosphorosilicate glass formed in the diffusion process in the step 2); 4) forming a back passivation layer on the back of the silicon chip; 5) forming a passivation film on the frontage of the silicon chip; 6) depositing silver nano-particles on the passivation film; 7) forming a back electric field and a back electrode on the back of the silicon chip; 8) forming the positive electrode on the frontage of the silicon chip; 9) sintering the silicon chip. Through the deposition of the silver nano-particles on the frontage passivation film of the silicon chip, the surface plasma oscillation of the silver nano-particles is excited dependent on the incident light, the absorption rate of the sunlight can be obviously enhanced, and the photoelectric conversion efficiency of the battery is promoted through the adding of the diffusion effect of the silver particles at the same time.
Description
Technical field
The present invention relates to a kind of solaode, be specifically related to the preparation method of a kind of solaode, belong to solaode skill
Art field.
Background technology
Solaode is that one effectively absorbs solar radiant energy, utilizes photovoltaic effect to convert optical energy into the device of electric energy,
When solar irradiation is in quasiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), in P-N junction
Under the effect of electric field, hole is flowed to P district by N district, and electronics is flowed to N district by P district, is formed for electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries has six procedures, respectively making herbs into wool, spread, etch, plated film, silk screen printing,
Sintering.Making herbs into wool is that front side of silicon wafer is etched into rough matte, increases the absorption of sunlight；Diffusion is in front side of silicon wafer shape
Become PN junction, produce photovoltaic effect；Etching is to remove silicon chip back side and the PN junction at edge and the phosphorosilicate glass in front；Plated film is
In front side of silicon wafer silicon nitride film, reduce the reflection of sunlight；Silk screen printing is to starch at front side of silicon wafer and back up anelectrode
Material, back electrode slurry and Al-back-surface-field (BSF) paste；Sintering is the slurry curing by front side of silicon wafer and back up, forms electrode.
The photoelectric transformation efficiency preparing solaode in existing preparation method is relatively low.
Summary of the invention
The problem existed for above-mentioned prior art, the present invention provides the preparation method of a kind of solaode, the solar energy of preparation
Battery can improve sunlight absorbance, thus improves photoelectric transformation efficiency.
To achieve these goals, the preparation method of a kind of solaode that the present invention uses, comprise the following steps:
1) P-type silicon is chosen as silicon chip, and in the front making herbs into wool of silicon chip；
2) front at silicon chip is diffused forming N-type emitter stage；
3) removal step 2) diffusion process formed phosphorosilicate glass；
4) backside passivation layer is formed at silicon chip back side；
5) passivating film is formed at front side of silicon wafer；
6) on passivating film, silver nano-grain is deposited；
7) back of the body electric field and back electrode are formed at silicon chip back side；
8) anelectrode is formed at front side of silicon wafer；
9) silicon chip is sintered.
As improvement, described step 6) concrete operations be:
Silicon chip after plated film is placed in silver nitrate solution, after standing 1-10min, takes out silicon chip and put into citric acid and polyethylene pyrrole
In the mixed solution of pyrrolidone, after reaction 1-10min, take out silicon chip, clean up with deionized water, dry up.
As improvement, the concentration of described silver nitrate is 0.5-2.0mol/L.
As improvement, the concentration of described citric acid is 3-5mol/L, and the consumption of citric acid is 5-10L.
As improvement, the consumption of described polyvinylpyrrolidone is 0.02-0.20g.
As improvement, described silicon chip time of repose in silver nitrate solution is 1-5min.
As improvement, described silicon chip response time in mixed solution is 1-5min.
As improvement, described step 6) in formed silver nano-grain be square, spheroid or pyramid shape.
As improvement, a diameter of 20-80nm of described silver nano-grain.
As improvement, described step 8) positive electrode surface be electroplate with at least one silver layer, described silver layer is wrapped in described anelectrode
On.
Compared with prior art, the present invention, by chemical deposition silver nano-grain on front side of silicon wafer passivating film, relies on incident illumination to swash
Send out the surface plasma vibration of silver nano-grain, the absorbance of sunlight can be obviously enhanced, simultaneously plus the astigmatism effect of Argent grain,
Thus promote the photoelectric transformation efficiency of battery.
Accompanying drawing explanation
Fig. 1 is the process chart of the present invention；
Fig. 2 is the structural representation that the inventive method prepares solaode；
In figure: 1, P-type silicon, 2, N-type emitter stage, 3, passivating film, 4, anelectrode, 5, backside passivation layer, 6, back of the body electric field,
7, back electrode.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention of greater clarity, below by drawings and Examples, to the present invention
It is further elaborated.However, it should be understood that specific embodiment described herein is only in order to explain the present invention, not
For limiting the scope of the present invention.
Unless otherwise defined, the skill of all of technical term used herein and scientific terminology and the technical field belonging to the present invention
The implication that art personnel are generally understood that is identical, and the term used the most in the description of the invention is intended merely to describe concrete
The purpose of embodiment, it is not intended that in limiting the present invention.
Embodiment one
As it is shown in figure 1, the preparation method of a kind of solaode, comprise the following steps:
1) P-type silicon is chosen as silicon chip, and in the front making herbs into wool of silicon chip；
2) front at silicon chip is diffused forming N-type emitter stage；
3) removal step 2) diffusion process formed phosphorosilicate glass；
4) backside passivation layer is formed at silicon chip back side；
5) passivating film is formed at front side of silicon wafer；
6) silicon chip after plated film is placed in the silver nitrate solution that concentration is 0.5mol/L, after standing 10min, takes out, then will
Silicon chip puts into the mixed solution (citric acid in mixed solution of citric acid that concentration is 3mol/L and polyvinylpyrrolidone (PVP)
Consumption be 5L, the consumption of polyvinylpyrrolidone is 0.02g) in, reaction 10min after, take out silicon chip, use deionized water
Clean up, dry up, the silicon chip of silver nano-grain, wherein a diameter of 20-80nm of silver nano-grain must be deposited, formation
Silver nano-grain is square, spheroid or pyramid shape；
7) back of the body electric field and back electrode are formed at silicon chip back side；
8) forming anelectrode at front side of silicon wafer, positive electrode surface is electroplate with at least one silver layer, and described silver layer is wrapped in described anelectrode
On, make anelectrode become silver electrode；
9) silicon chip is sintered.
Embodiment two
The step 6 of this embodiment) in, the silicon chip after plated film is placed in the silver nitrate solution that concentration is 2.0mol/L, stands 1min
After, take out, then silicon chip is put into the citric acid and the mixed solution (mixed solution of polyvinylpyrrolidone that concentration is 5mol/L
The consumption of middle citric acid is 8L, and the consumption of polyvinylpyrrolidone is 0.10g) in, after reaction 1min, take out silicon chip, spend
Ionized water cleans up, and dries up, and must deposit the silicon chip of silver nano-grain, wherein a diameter of 20-80nm of silver nano-grain,
The silver nano-grain formed is square, spheroid or pyramid shape；Remaining operating procedure is identical with embodiment one.
Embodiment three
The step 6 of this embodiment) in, the silicon chip after plated film is placed in the silver nitrate solution that concentration is 1.0mol/L, stands 5min
After, take out, then silicon chip is put into the citric acid and the mixed solution (mixed solution of polyvinylpyrrolidone that concentration is 4mol/L
The consumption of middle citric acid is 10L, and the consumption of polyvinylpyrrolidone is 0.20g) in, after reaction 5min, take out silicon chip, use
Deionized water cleans up, and dries up, and must deposit the silicon chip of silver nano-grain, wherein a diameter of 20-80nm of silver nano-grain,
The silver nano-grain formed is square, spheroid or pyramid shape；Remaining operating procedure is identical with embodiment one.
The structure of solaode is obtained as in figure 2 it is shown, this battery includes P-type silicon 1 by provider's legal system of the present invention；
The front of P-type silicon 1 is provided with N-type emitter stage 2, and the front of described N-type emitter stage 2 is provided with passivating film 3, described passivating film
The front of 3 is provided with anelectrode 4, and the front deposition of passivating film 3 has silver nano-grain；
The back side of described P-type silicon 1 is provided with backside passivation layer 5, and described backside passivation layer 5 is provided with back of the body electric field 6 and back electrode 7,
Described back electrode 7 is positioned at the back side of back of the body electric field 6.
The present invention, by chemical deposition silver nano-grain on front side of silicon wafer passivating film, relies on incident illumination to excite the table of silver nano-grain
Face plasma oscillation, can be obviously enhanced the absorbance of sunlight, simultaneously plus the astigmatism effect of Argent grain, thus promote battery
Photoelectric transformation efficiency.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and former
Any amendment, equivalent or the improvement etc. made within then, should be included within the scope of the present invention.
Claims (10)
1. the preparation method of a solaode, it is characterised in that comprise the following steps:
1) P-type silicon is chosen as silicon chip, and in the front making herbs into wool of silicon chip；
2) front at silicon chip is diffused forming N-type emitter stage；
3) removal step 2) diffusion process formed phosphorosilicate glass；
4) backside passivation layer is formed at silicon chip back side；
5) passivating film is formed at front side of silicon wafer；
6) on passivating film, silver nano-grain is deposited；
7) back of the body electric field and back electrode are formed at silicon chip back side；
8) anelectrode is formed at front side of silicon wafer；
9) silicon chip is sintered.
The preparation method of a kind of solaode the most according to claim 1, it is characterised in that described step 6) tool
Gymnastics conduct:
Silicon chip after plated film is placed in silver nitrate solution, after standing 1-10min, takes out silicon chip and put into citric acid and polyethylene pyrrole
In the mixed solution of pyrrolidone, after reaction 1-10min, take out silicon chip, clean up with deionized water, dry up.
The preparation method of a kind of solaode the most according to claim 2, it is characterised in that the concentration of described silver nitrate
For 0.5-2.0mol/L.
The preparation method of a kind of solaode the most according to claim 2, it is characterised in that the concentration of described citric acid
For 3-5mol/L, the consumption of citric acid is 5-10L.
5. according to the preparation method of a kind of solaode described in claim 2 or 4, it is characterised in that described polyethylene pyrrole
The consumption of pyrrolidone is 0.02-0.20g.
The preparation method of a kind of solaode the most according to claim 2, it is characterised in that described silicon chip is at silver nitrate
In solution, time of repose is 1-5min.
7. according to the preparation method of a kind of solaode described in claim 2 or 6, it is characterised in that described silicon chip is mixed
In conjunction solution, the response time is 1-5min.
The preparation method of a kind of solaode the most according to claim 1, it is characterised in that described step 6) in shape
The silver nano-grain become is square, spheroid or pyramid shape.
The preparation method of a kind of solaode the most according to claim 1, it is characterised in that described step 6) in silver
A diameter of 20-80nm of nano-particle.
The preparation method of a kind of solaode the most according to claim 1, it is characterised in that described step 8)
Positive electrode surface is electroplate with at least one silver layer, and described silver layer is wrapped on described anelectrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610334115.3A CN105932100B (en) | 2016-05-18 | 2016-05-18 | A kind of preparation method of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610334115.3A CN105932100B (en) | 2016-05-18 | 2016-05-18 | A kind of preparation method of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105932100A true CN105932100A (en) | 2016-09-07 |
| CN105932100B CN105932100B (en) | 2017-10-20 |
Family
ID=56841733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610334115.3A Active CN105932100B (en) | 2016-05-18 | 2016-05-18 | A kind of preparation method of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105932100B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717927A (en) * | 2009-12-02 | 2010-06-02 | 浙江大学 | Solution for replacing silver plating in deposited nanostructure on surface of silicon matrix and use method thereof |
| CN102332477A (en) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | Light trapping structure for monocrystalline silicon solar cell |
| US20120142140A1 (en) * | 2010-12-02 | 2012-06-07 | Applied Nanotech Holdings, Inc. | Nanoparticle inks for solar cells |
| CN103066160A (en) * | 2013-01-15 | 2013-04-24 | 浙江大学 | Method for generating porous silicon on solar battery silicon wafer surface |
| CN104201216A (en) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | Solar cell and preparation method thereof |
-
2016
- 2016-05-18 CN CN201610334115.3A patent/CN105932100B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717927A (en) * | 2009-12-02 | 2010-06-02 | 浙江大学 | Solution for replacing silver plating in deposited nanostructure on surface of silicon matrix and use method thereof |
| US20120142140A1 (en) * | 2010-12-02 | 2012-06-07 | Applied Nanotech Holdings, Inc. | Nanoparticle inks for solar cells |
| CN102332477A (en) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | Light trapping structure for monocrystalline silicon solar cell |
| CN103066160A (en) * | 2013-01-15 | 2013-04-24 | 浙江大学 | Method for generating porous silicon on solar battery silicon wafer surface |
| CN104201216A (en) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | Solar cell and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 陈国杰等: ""纳米银的制备及应用研究"", 《中国颗粒学会第六届学术年会暨海峡两岸颗粒技术研讨会》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105932100B (en) | 2017-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101937944A (en) | Preparation method of double-sided passivated crystalline silicon solar cell | |
| CN100576580C (en) | The post produced velvet production process of solar cell | |
| CN102683493A (en) | Preparation method of N-type crystalline silicon double-sided back contact solar cell | |
| CN102842646A (en) | Preparation method of interdigitated back-contact battery based on N-type substrate | |
| CN105206699A (en) | Back surface junction N-type double-sided crystal silicon cell and preparation method thereof | |
| CN106847943B (en) | Punch PERC double-sided solar batteries and its component, system and preparation method | |
| CN106098860A (en) | A kind of production technology of solar battery sheet | |
| CN211295118U (en) | Double-sided passivated crystalline silicon solar cell | |
| CN105514180A (en) | N-type back junction double-face battery and preparation method thereof | |
| CN102903765A (en) | All Al-BSF crystal silicon cell and preparation method thereof | |
| CN203812893U (en) | N-type back-junction solar cell | |
| CN105957921B (en) | A kind of method that utilization printing technology prepares N-type silicon IBC solar cells | |
| WO2020211207A1 (en) | Bifacial solar cell and preparation method therefor | |
| CN104134706B (en) | Graphene silicon solar cell and manufacturing method thereof | |
| CN103618025B (en) | A kind of crystalline silicon back junction solar battery preparation method | |
| CN105047758A (en) | Black silicon solar cell and preparation method thereof | |
| CN204927300U (en) | PERC solar cell | |
| CN111799339A (en) | Surface treatment method of silicon wafer suitable for solar cell | |
| CN105932100A (en) | Preparation method of solar battery | |
| CN204332984U (en) | Solar photovoltaic assembly | |
| CN106449847A (en) | Solar battery with vertical PN heterojunction and manufacturing method thereof | |
| CN205752203U (en) | A kind of solaode of high-photoelectric transformation efficiency | |
| CN202996849U (en) | All-aluminum back surface field crystalline silicon solar cell | |
| CN205211766U (en) | Two -sided battery of N type back of body knot | |
| CN104538502A (en) | Crystalline silicon MWT solar battery manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180102 Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |