CN104201216A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN104201216A CN104201216A CN201410413771.3A CN201410413771A CN104201216A CN 104201216 A CN104201216 A CN 104201216A CN 201410413771 A CN201410413771 A CN 201410413771A CN 104201216 A CN104201216 A CN 104201216A
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- silver
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- silicon chip
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- 238000002360 preparation method Methods 0.000 title claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 121
- 229910052709 silver Inorganic materials 0.000 claims abstract description 112
- 239000004332 silver Substances 0.000 claims abstract description 112
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 238000007747 plating Methods 0.000 claims description 22
- 238000009713 electroplating Methods 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 11
- 239000003814 drug Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 9
- 239000010946 fine silver Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 239000011800 void material Substances 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a solar cell. The solar cell comprises P type silicon, an N type emitter is formed on the front surface of the P type silicon through diffusion, the front surface of the N type emitter is provided with a passivation film, the front surface of the passivation film is provided with a positive electrode which is a silver electrode, the back surface of the P type silicon is provided with a back passivation layer, the back passivation layer is provided with a back electric field and a back electrode, the silver electrode is electroplated with at least one silver layer, and the silver layer covers the silver electrode. Accordingly, the invention also provides a method of preparing the solar cell. The solar cell is simple in structure, the silver layer can fill voids in the surface of the silver electrode, so that the void ratio of the silver electrode of a traditional solar cell is effectively reduced, the conductivity of the silver electrode is improved, and further the photoelectric conversion efficiency of the cell is enhanced.
Description
Technical field
The present invention relates to battery technology field, relate in particular to a kind of solar cell and preparation method thereof.
Background technology
Solar cell is a kind of solar radiant energy that effectively absorbs, utilize photovoltaic effect transform light energy to be become to the device of electric energy, when solar irradiation is on semiconductor P-N knot (P-N Junction), form new hole-duplet (V-E pair), under the effect of P-N knot electric field, hole flows to P district by N district, and electronics flows to N district by P district, after connection circuit, just forms electric current.
The manufacturing process of crystal silicon solar batteries has 6 procedures, is respectively making herbs into wool, diffusion, dephosphorization silex glass and back of the body knot, plated film, silk screen printing, sintering.Wherein silkscreen process is divided into the printing of back of the body silver, back of the body aluminium printing and three steps of positive silver printing.Positive silver printing is silver slurry to be printed on to the front of silicon chip, forms the grid line structure of main grid and secondary grid.
After print positive electrode, silicon chip, by sintering furnace, is dried after sintering, and silver slurry solidify to form silver electrode.In drying sintering process, the materials such as the organic substance in silver slurry and alcohols successively vapor away, and the surface of silver electrode and inside produce a lot of small holes.These cavities cause the conductance of silver electrode to decline, and then affect the photoelectric conversion efficiency of solar cell.
Summary of the invention
Technical problem to be solved by this invention is, a kind of simple in structure, solar cell that cost is low is provided, and reduces the voidage of battery front side silver electrode.
Technical problem to be solved by this invention is also, a kind of preparation method of solar cell is provided, and its solar battery structure making is simple, cost is low, the voidage of battery front side silver electrode is low.
In order to solve the problems of the technologies described above, the invention provides a kind of solar cell, described solar cell comprises that the front of P type silicon, described P type silicon is by diffuseing to form N-type emitter, the front of described N emitter is provided with passivating film, the front of described passivating film is provided with positive electrode, described positive electricity is silver electrode very, the back side of described P type silicon is provided with backside passivation layer, described backside passivation layer is provided with back of the body electric field and back electrode, in described silver electrode, be electroplate with at least one silver layer, described silver layer is coated described silver electrode.
As the improvement of such scheme, the electric current of described plating is constant current.
As the improvement of such scheme, the current density of described plating is 0.1～8A/dm
2.
As the improvement of such scheme, the current density of described plating is 1～5A/dm
2.
As the improvement of such scheme, the thickness of described silver layer is 0.5-5 μ m.
As the improvement of such scheme, the thickness of described silver layer is 1-2 μ m.
Accordingly, the present invention also provides a kind of method of preparing above-mentioned solar cell, comprising:
Selecting P type silicon is silicon chip, and in the positive making herbs into wool of silicon chip;
In the front of silicon chip, diffuse to form N-type emitter;
Remove the phosphorosilicate glass that diffusion process forms;
At silicon chip back side, form backside passivation layer;
At front side of silicon wafer, form passivating film;
At silicon chip back side, form back of the body electric field and back electrode;
At front side of silicon wafer, form positive electrode;
Silicon chip is carried out to sintering;
Adopt the mode of electroplating, be electroplate with at least one silver layer on positive electrode, described silver layer is coated described positive electrode, and described positive electricity is silver electrode very.
As the improvement of such scheme, the process of described plating is as follows:
Solar cell is inserted in electroplating liquid medicine, using the silver electrode of solar cell as negative pole, with fine silver plate, as anode, additional power source forms loop, and the silver ion in electroplating liquid medicine is reduced into argent in silver electrode, forms silver layer.
As the improvement of such scheme, the electric current of described plating is constant current;
The current density of described plating is 0.1～8A/dm
2.
As the improvement of such scheme, the thickness of described silver layer is 0.5-5 μ m.
Implement the present invention, there is following beneficial effect:
The invention provides a kind of solar cell, comprise silver electrode, be electroplate with at least one silver layer in described silver electrode, described silver layer is coated described silver electrode.The present invention adopts the mode of plating, and because nearly all conduct electricity each position of silver electrode, silver is electroplated in each position of silver electrode surface, and deposition rate is all identical, finally forms the thin silver of one deck and covers silver electrode.Electrosilvering can be filled up the cavity of silver electrode surface, reduces voidage, improves the conductive capability of silver electrode, and then improves the photoelectric conversion efficiency of battery.
Further, the electric current of described plating is constant current, reaches the effect of constant deposition rate, is conducive to form even, the careful coat of metal.The current density of electroplating is 0.1～8A/dm
2, being conducive to deposit the careful coat of metal, this coating has good conductivity.The thickness of described silver layer is 0.5-5 μ m, is conducive to guarantee its conductivity, improves the conductive capability of silver electrode.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing solar cell;
Fig. 2 is the structural representation of solar cell of the present invention;
Fig. 3 is the structural representation of the electroplating device of solar cell employing of the present invention;
Fig. 4 is the preparation method's of solar cell of the present invention flow chart.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is described in further detail.
Referring to Fig. 1, Fig. 1 has shown existing solar cell, described solar cell comprises that the front of P type silicon 1, described P type silicon 1 is by diffuseing to form N-type emitter 2, the front of described N emitter 2 is provided with passivating film 3, the front of described passivating film 3 is provided with positive electrode 4, described positive electrode 4 is silver electrode, and the back side of described P type silicon 1 is provided with backside passivation layer 5, and described backside passivation layer 5 is provided with back of the body electric field 6 and back electrode 7.
Wherein, described positive electrode 4 is silver electrode.
Existing solar cell, it is after print positive electrode, and silicon chip is dried sintering by sintering furnace, and silver slurry solidify to form silver electrode.In drying sintering process, the materials such as the organic substance in silver slurry and alcohols successively vapor away, and the surface of silver electrode and inside produce a lot of small holes.These cavities cause the conductance of silver electrode to decline, and then affect the photoelectric conversion efficiency of solar cell.
Referring to Fig. 2, Fig. 2 has shown solar cell of the present invention, described solar cell comprises that the front of P type silicon 1, described P type silicon 1 is by diffuseing to form N-type emitter 2, the front of described N emitter 2 is provided with passivating film 3, the front of described passivating film 3 is provided with positive electrode 4, described positive electrode 4 is silver electrode, and the back side of described P type silicon 1 is provided with backside passivation layer 5, and described backside passivation layer 5 is provided with back of the body electric field 6 and back electrode 7.In described silver electrode, be electroplate with at least one silver layer 8, the coated described silver electrode of described silver layer 8.
The present invention adopts the mode of plating, and because nearly all conduct electricity each position of silver electrode, silver is electroplated in each position of silver electrode surface, and deposition rate is all identical, finally forms the thin silver of one deck and covers silver electrode.Electrosilvering can be filled up the cavity of silver electrode surface, reduces voidage, improves the conductive capability of silver electrode, and then improves the photoelectric conversion efficiency of battery.
The electric current of described plating is constant current, reaches the effect of constant deposition rate, is conducive to form even, the careful coat of metal.
The current density of described plating is 0.1～8A/dm
2, but be not limited to this.Preferably, the current density of described plating is 1～5A/dm
2.When the current density of electroplating is 0.1～8A/dm
2time, being conducive to deposit the careful coat of metal, this coating has good conductivity.
The thickness of described silver layer 8 is 0.5-5 μ m, but is not limited to this.Preferably, the thickness of described silver layer 8 is 1-2 μ m.Adopt the thick silver layer of 0.5-5 μ m, can guarantee its conductivity, improve the conductive capability of silver electrode, and then improve the photoelectric conversion efficiency of battery.Silver layer of the present invention can not be thicker than 5 μ m, otherwise can affect the conductive capability of electrode.
Further, described positive electrode 4 comprises main grid and secondary grid, and described main grid and secondary grid are all electroplate with described silver layer 8, can more fully fill up the cavity of positive electrode surface, reduces voidage, improves the conductive capability of silver electrode, and then improves the photoelectric conversion efficiency of battery.
Preferably, described positive electrode 4 comprises 3 main grids and many secondary grid, and described 3 main grids and many secondary grid intersect vertically.
Referring to Fig. 3, the electroplating device that the present invention can show by Fig. 3 makes silver layer.As shown in Figure 3, described electroplating device comprises electroplating bath 1, is placed in the electroplating liquid medicine 2 in electroplating bath 1, the solar cell 3 that is immersed in electroplating liquid medicine 2 and fine silver plate 4, and described solar cell 3 is connected by power supply 5 with fine silver plate 4.Concrete, the anode of power supply 5 is connected with fine silver plate 4, and the negative electrode of power supply 5 is connected with solar cell 3.
Solar cell is inserted in electroplating liquid medicine, using the silver electrode of solar cell as negative pole, with fine silver plate, as anode, additional power source forms loop, and the silver ion in electroplating liquid medicine is reduced into argent in silver electrode, forms silver layer.Because the permeability of liquid is very strong, the cavity of silver electrode surface can be repaired and fill up, and effectively reduces voidage, improves the conductive capability of silver electrode.
It should be noted that, described electroplating liquid medicine is selected commercially available non-cyanide silver electroplating liquid.Preferably, described electrosilvering liquid comprises main salt, complexing agent and other auxiliary elements, and wherein, main salt is selected silver nitrate, and complexing agent is selected sodium thiosulfate or ATS (Ammonium thiosulphate), or sulfosalicylic acid and the two complexing agents of ammonium salt work.
Referring to Fig. 4, the present invention also provides a kind of preparation method of solar cell, comprises
S401, to select P type silicon be silicon chip, and in the positive making herbs into wool of silicon chip;
Front side of silicon wafer is matte, can reduce surface reflectivity, increases the utilance of light.
S402, in the front of silicon chip, diffuse to form N-type emitter;
Front side of silicon wafer carries out after P diffusion, forms p-n junction.
The phosphorosilicate glass that S403, removal diffusion process form;
Remove phosphorosilicate glass PSG, eliminate surperficial dead layer.
S404, at silicon chip back side, form backside passivation layer;
Described backside passivation layer can comprise: the Al being connected with described P type silicon
2o
3layer or SiO
2layer, and with described Al
2o
3layer or SiO
2the silicon nitride layer that layer is connected.This two membranes can be obtained by the mode of plasma reinforced chemical vapour deposition.
S405, at front side of silicon wafer, form passivating film;
Described passivating film is preferably silicon nitride film, but is not limited to this.
S406, at silicon chip back side, form back of the body electric field and back electrode;
Described back electrode is silver electrode, and described back of the body electric field is aluminium back surface field, but is not limited to this.
S407, at front side of silicon wafer, form positive electrode;
Described positive electricity is silver electrode very, but is not limited to this.
S408, silicon chip is carried out to sintering;
The mode that S409, employing are electroplated is electroplate with at least one silver layer on positive electrode, and described silver layer is coated described positive electrode, and described positive electricity is silver electrode very.
The present invention adopts the mode of plating, and because nearly all conduct electricity each position of silver electrode, silver is electroplated in each position of silver electrode surface, and deposition rate is all identical, finally forms the thin silver of one deck and covers silver electrode.Electrosilvering can be filled up the cavity of silver electrode surface, reduces voidage, improves the conductive capability of silver electrode, and then improves the photoelectric conversion efficiency of battery.
The electric current of described plating is constant current, reaches the effect of constant deposition rate, is conducive to form even, the careful coat of metal.
The current density of described plating is 0.1～8A/dm
2, but be not limited to this.Preferably, the current density of described plating is 1～5A/dm
2.When the current density of electroplating is 0.1～8A/dm
2time, being conducive to deposit the careful coat of metal, this coating has good conductivity.
The thickness of described silver layer is 0.5-5 μ m, but is not limited to this.Preferably, the thickness of described silver layer is 1-2 μ m.Adopt the thick silver layer of 0.5-5 μ m, can guarantee its conductivity, improve the conductive capability of silver electrode, and then improve the photoelectric conversion efficiency of battery.
Further, described positive electrode comprises main grid and secondary grid, and described main grid and secondary grid are all electroplate with described silver layer, can more fully fill up the cavity of positive electrode surface, reduces voidage, improves the conductive capability of silver electrode, and then improves the photoelectric conversion efficiency of battery.
Preferably, described positive electrode comprises 3 main grids and many secondary grid, and described 3 main grids and many secondary grid intersect vertically.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a solar cell, described solar cell comprises that the front of P type silicon, described P type silicon is by diffuseing to form N-type emitter, the front of described N emitter is provided with passivating film, the front of described passivating film is provided with positive electrode, and described positive electricity is silver electrode very, and the back side of described P type silicon is provided with backside passivation layer, described backside passivation layer is provided with back of the body electric field and back electrode, it is characterized in that, be electroplate with at least one silver layer in described silver electrode, described silver layer is coated described silver electrode.
2. solar cell as claimed in claim 1, is characterized in that, the electric current of described plating is constant current.
3. solar cell as claimed in claim 2, is characterized in that, the current density of described plating is 0.1～8A/dm
2.
4. solar cell as claimed in claim 3, is characterized in that, the current density of described plating is 1～5A/dm
2.
5. solar cell as claimed in claim 1, is characterized in that, the thickness of described silver layer is 0.5-5 μ m.
6. solar cell as claimed in claim 5, is characterized in that, the thickness of described silver layer is 1-2 μ m.
7. a preparation method who prepares the solar cell as described in claim 1-6 any one, comprising: selecting P type silicon is silicon chip, and in the positive making herbs into wool of silicon chip; In the front of silicon chip, diffuse to form N-type emitter; Remove the phosphorosilicate glass that diffusion process forms; At silicon chip back side, form backside passivation layer; At front side of silicon wafer, form passivating film; At silicon chip back side, form back of the body electric field and back electrode; At front side of silicon wafer, form positive electrode; Silicon chip is carried out to sintering; It is characterized in that, after silicon chip is carried out to the step of sintering, also comprise:
Adopt the mode of electroplating, be electroplate with at least one silver layer on positive electrode, described silver layer is coated described positive electrode, and described positive electricity is silver electrode very.
8. the preparation method of solar cell as claimed in claim 7, is characterized in that, the process of described plating is as follows:
Solar cell is inserted in electroplating liquid medicine, using the silver electrode of solar cell as negative pole, with fine silver plate, as anode, additional power source forms loop, and the silver ion in electroplating liquid medicine is reduced into argent in silver electrode, forms silver layer.
9. the preparation method of solar cell as claimed in claim 7, is characterized in that, the electric current of described plating is constant current;
The current density of described plating is 0.1～8A/dm
2.
10. the preparation method of solar cell as claimed in claim 7, is characterized in that, the thickness of described silver layer is 0.5-5 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410413771.3A CN104201216A (en) | 2014-08-21 | 2014-08-21 | Solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410413771.3A CN104201216A (en) | 2014-08-21 | 2014-08-21 | Solar cell and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104201216A true CN104201216A (en) | 2014-12-10 |
Family
ID=52086483
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|---|---|---|---|
| CN201410413771.3A Pending CN104201216A (en) | 2014-08-21 | 2014-08-21 | Solar cell and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932100A (en) * | 2016-05-18 | 2016-09-07 | 广东爱康太阳能科技有限公司 | Preparation method of solar battery |
| CN108074997A (en) * | 2017-12-22 | 2018-05-25 | 广东爱旭科技股份有限公司 | Tubular type PERC double-side solar cells and preparation method thereof and special electroplating device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103680674A (en) * | 2012-09-26 | 2014-03-26 | 上海比亚迪有限公司 | Front-side seed layer silver paste of crystal silicon solar cell and preparation method thereof, and crystal silicon solar cell and preparation method thereof |
-
2014
- 2014-08-21 CN CN201410413771.3A patent/CN104201216A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103680674A (en) * | 2012-09-26 | 2014-03-26 | 上海比亚迪有限公司 | Front-side seed layer silver paste of crystal silicon solar cell and preparation method thereof, and crystal silicon solar cell and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932100A (en) * | 2016-05-18 | 2016-09-07 | 广东爱康太阳能科技有限公司 | Preparation method of solar battery |
| CN105932100B (en) * | 2016-05-18 | 2017-10-20 | 广东爱康太阳能科技有限公司 | A kind of preparation method of solar cell |
| CN108074997A (en) * | 2017-12-22 | 2018-05-25 | 广东爱旭科技股份有限公司 | Tubular type PERC double-side solar cells and preparation method thereof and special electroplating device |
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Application publication date: 20141210 |