CN105917577B - 接收机中的载波聚集间隔离 - Google Patents

接收机中的载波聚集间隔离 Download PDF

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Publication number
CN105917577B
CN105917577B CN201580004800.3A CN201580004800A CN105917577B CN 105917577 B CN105917577 B CN 105917577B CN 201580004800 A CN201580004800 A CN 201580004800A CN 105917577 B CN105917577 B CN 105917577B
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China
Prior art keywords
transformer
signal
switch
shared power
power distributing
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CN201580004800.3A
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English (en)
Chinese (zh)
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CN105917577A (zh
Inventor
A·A·M·约瑟夫
M·乌尊克
R·许
E·A·S·阿布戴尔加尼
W·V·里昂
S·H·伍
A·何
L-C·常
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
    • H04B1/12—Neutralising, balancing, or compensation arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1607—Supply circuits
    • H04B1/1615—Switching on; Switching off, e.g. remotely
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/0001—Arrangements for dividing the transmission path
    • H04L5/0003—Two-dimensional division
    • H04L5/0005—Time-frequency
    • H04L5/0007—Time-frequency the frequencies being orthogonal, e.g. OFDM(A) or DMT
    • H04L5/001—Time-frequency the frequencies being orthogonal, e.g. OFDM(A) or DMT the frequencies being arranged in component carriers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/14—Two-way operation using the same type of signal, i.e. duplex
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/507—A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/516—Some amplifier stages of an amplifier use supply voltages of different value
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7227—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the supply circuit of the amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
CN201580004800.3A 2014-01-16 2015-01-14 接收机中的载波聚集间隔离 Active CN105917577B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461928140P 2014-01-16 2014-01-16
US61/928,140 2014-01-16
US14/255,998 US9425832B2 (en) 2014-01-16 2014-04-18 Inter carrier-aggregation isolation in a receiver
US14/255,998 2014-04-18
PCT/US2015/011288 WO2015108897A1 (en) 2014-01-16 2015-01-14 Inter carrier-aggregation isolation in a receiver

Publications (2)

Publication Number Publication Date
CN105917577A CN105917577A (zh) 2016-08-31
CN105917577B true CN105917577B (zh) 2018-12-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580004800.3A Active CN105917577B (zh) 2014-01-16 2015-01-14 接收机中的载波聚集间隔离

Country Status (6)

Country Link
US (1) US9425832B2 (enExample)
EP (1) EP3095189B1 (enExample)
JP (1) JP6469116B2 (enExample)
KR (1) KR20160108431A (enExample)
CN (1) CN105917577B (enExample)
WO (1) WO2015108897A1 (enExample)

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KR102301680B1 (ko) * 2014-07-16 2021-09-14 삼성전자주식회사 다이버시티 증폭 모듈 및 이를 포함하는 전자 장치
US9431963B2 (en) 2014-09-19 2016-08-30 Qualcomm Incorporated Dual stage low noise amplifier for multiband receiver
US9860898B1 (en) 2015-11-16 2018-01-02 Sprint Communications Company L.P. Long term evolution (LTE) network control of carrier aggregation for user equipment
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
US10256848B2 (en) * 2016-04-19 2019-04-09 Murata Manufacturing Co., Ltd. Communication unit
US10122332B2 (en) 2016-12-14 2018-11-06 Qualcomm Incorporated Low-noise amplifier with integrated wideband transformer-based power splitter
WO2019190500A1 (en) * 2018-03-28 2019-10-03 Mohammed Alam High-performance receiver architecture
US20210376797A1 (en) * 2018-03-30 2021-12-02 Apple Inc. Low-noise amplifier supporting multi carrier operations
US11018840B2 (en) 2019-01-17 2021-05-25 Analog Devices International Unlimited Company Single local oscillator in a multi-band frequency division duplex transceiver
KR102720544B1 (ko) * 2020-02-26 2024-10-23 삼성전자 주식회사 이중 접속 회로 및 그것을 포함하는 전자 장치
US11658689B2 (en) * 2020-06-29 2023-05-23 Qualcomm Incorporated T-switch with shunt for improved receiver sensitivity
US12301170B2 (en) * 2021-09-22 2025-05-13 Qualcomm Incorporated Doherty transceiver interface
US20240292389A1 (en) * 2023-02-23 2024-08-29 Dish Network L.L.C. Intelligent band switching

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US20070297156A1 (en) * 2006-06-26 2007-12-27 Eiichi Hosomi Method, system and apparatus for power distribution for a semiconductor device
US20100040178A1 (en) * 2007-01-19 2010-02-18 Nextwave Broadband Inc. Transceiver with Receive Path Performance Diversity and Combiner with Jammer Detect Feedback
US20130043946A1 (en) * 2011-08-16 2013-02-21 Qualcomm Incorporated Low noise amplifiers with combined outputs
CN103179743A (zh) * 2009-03-04 2013-06-26 立锜科技股份有限公司 具有交直流直接转换控制功能的led驱动电路与相关方法和集成电路
US20130331049A1 (en) * 2012-04-17 2013-12-12 Broadcom Corporation Low Power Multi-Band, Multi-Mode Transmitter

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US6919858B2 (en) * 2003-10-10 2005-07-19 Broadcom, Corp. RF antenna coupling structure
US7719352B2 (en) 2007-03-13 2010-05-18 Qualcomm Incorporated Active circuits with isolation switches
US7486135B2 (en) 2007-05-29 2009-02-03 Telefonaktiebolaget Lm Ericsson (Publ) Configurable, variable gain LNA for multi-band RF receiver
US8483627B2 (en) 2008-05-09 2013-07-09 Texas Instruments Incorporated Circuits, processes, devices and systems for full integration of RF front end module including RF power amplifier
US8229367B2 (en) 2009-04-14 2012-07-24 Qualcomm, Incorporated Low noise amplifier with combined input matching, balun, and transmit/receive switch
KR101676896B1 (ko) * 2009-07-28 2016-11-16 티에이치엑스 리미티드 전원 장치
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US9154356B2 (en) * 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
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US20070297156A1 (en) * 2006-06-26 2007-12-27 Eiichi Hosomi Method, system and apparatus for power distribution for a semiconductor device
US20100040178A1 (en) * 2007-01-19 2010-02-18 Nextwave Broadband Inc. Transceiver with Receive Path Performance Diversity and Combiner with Jammer Detect Feedback
CN103179743A (zh) * 2009-03-04 2013-06-26 立锜科技股份有限公司 具有交直流直接转换控制功能的led驱动电路与相关方法和集成电路
US20130043946A1 (en) * 2011-08-16 2013-02-21 Qualcomm Incorporated Low noise amplifiers with combined outputs
US20130331049A1 (en) * 2012-04-17 2013-12-12 Broadcom Corporation Low Power Multi-Band, Multi-Mode Transmitter

Also Published As

Publication number Publication date
CN105917577A (zh) 2016-08-31
US20150200690A1 (en) 2015-07-16
KR20160108431A (ko) 2016-09-19
JP2017509198A (ja) 2017-03-30
EP3095189A1 (en) 2016-11-23
EP3095189B1 (en) 2019-09-18
WO2015108897A1 (en) 2015-07-23
US9425832B2 (en) 2016-08-23
JP6469116B2 (ja) 2019-02-13

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