CN105917312B - 动态随机存取存储器(dram)反向通道通信系统和方法 - Google Patents

动态随机存取存储器(dram)反向通道通信系统和方法 Download PDF

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Publication number
CN105917312B
CN105917312B CN201580004085.3A CN201580004085A CN105917312B CN 105917312 B CN105917312 B CN 105917312B CN 201580004085 A CN201580004085 A CN 201580004085A CN 105917312 B CN105917312 B CN 105917312B
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China
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dram
backward channel
channel line
pin
line
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Chinese (zh)
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CN105917312A (zh
Inventor
D·I·韦斯特
M·J·布鲁诺利
D·T·全
V·斯里尼瓦斯
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1004—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's to protect a block of data words, e.g. CRC or checksum
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Transceivers (AREA)
  • Detection And Correction Of Errors (AREA)
CN201580004085.3A 2014-01-09 2015-01-08 动态随机存取存储器(dram)反向通道通信系统和方法 Active CN105917312B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461925299P 2014-01-09 2014-01-09
US61/925,299 2014-01-09
US14/591,056 2015-01-07
US14/591,056 US9881656B2 (en) 2014-01-09 2015-01-07 Dynamic random access memory (DRAM) backchannel communication systems and methods
PCT/US2015/010583 WO2015105948A1 (en) 2014-01-09 2015-01-08 Dynamic random access memory (dram) backchannel communication systems and methods

Publications (2)

Publication Number Publication Date
CN105917312A CN105917312A (zh) 2016-08-31
CN105917312B true CN105917312B (zh) 2019-03-08

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Country Status (10)

Country Link
US (2) US9881656B2 (https=)
EP (1) EP3092568A1 (https=)
JP (1) JP2017503303A (https=)
KR (1) KR20160106096A (https=)
CN (1) CN105917312B (https=)
AR (1) AR099040A1 (https=)
BR (1) BR112016015961A2 (https=)
CA (1) CA2932653A1 (https=)
TW (1) TW201543498A (https=)
WO (1) WO2015105948A1 (https=)

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US9881656B2 (en) 2014-01-09 2018-01-30 Qualcomm Incorporated Dynamic random access memory (DRAM) backchannel communication systems and methods
US9728245B2 (en) 2015-02-28 2017-08-08 Intel Corporation Precharging and refreshing banks in memory device with bank group architecture
US10783950B2 (en) * 2015-09-02 2020-09-22 Nvidia Corporation Memory management systems and methods using a management communication bus
KR20190087893A (ko) 2018-01-17 2019-07-25 삼성전자주식회사 클럭을 공유하는 반도체 패키지 및 전자 시스템
US11036578B2 (en) 2018-04-12 2021-06-15 Samsung Electronics Co., Ltd. Semiconductor memory devices and memory systems including the same
CN110729006B (zh) * 2018-07-16 2022-07-05 超威半导体(上海)有限公司 存储器控制器中的刷新方案
US10747613B2 (en) * 2018-09-07 2020-08-18 Toshiba Memory Corporation Pooled frontline ECC decoders in memory systems
CN114556431B (zh) * 2019-10-29 2025-05-27 Oppo广东移动通信有限公司 增强现实的3d重建
US11392299B2 (en) 2019-12-20 2022-07-19 Micron Technology, Inc. Multi-purpose signaling for a memory system
US11360695B2 (en) 2020-09-16 2022-06-14 Micron Technology, Inc. Apparatus with combinational access mechanism and methods for operating the same

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CN1637731A (zh) * 2004-01-07 2005-07-13 松下电器产业株式会社 Dram控制装置以及dram控制方法
CN102214152A (zh) * 2010-04-01 2011-10-12 英特尔公司 存储器装置从自刷新状态的快速退出
CN103377695A (zh) * 2012-04-24 2013-10-30 三星电子株式会社 存储系统、存储器件、存储控制器及操作其的方法

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JPH065069A (ja) * 1992-06-18 1994-01-14 Nec Corp ダイナミック・ランダム・アクセス・メモリ
US7627804B2 (en) 2006-06-30 2009-12-01 Intel Corporation Memory device with speculative commands to memory core
US7937641B2 (en) 2006-12-21 2011-05-03 Smart Modular Technologies, Inc. Memory modules with error detection and correction
KR101308047B1 (ko) 2007-02-08 2013-09-12 삼성전자주식회사 메모리 시스템, 이 시스템을 위한 메모리, 및 이 메모리를위한 명령 디코딩 방법
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KR101873526B1 (ko) 2011-06-09 2018-07-02 삼성전자주식회사 에러 정정회로를 구비한 온 칩 데이터 스크러빙 장치 및 방법
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CN1637731A (zh) * 2004-01-07 2005-07-13 松下电器产业株式会社 Dram控制装置以及dram控制方法
CN102214152A (zh) * 2010-04-01 2011-10-12 英特尔公司 存储器装置从自刷新状态的快速退出
CN103377695A (zh) * 2012-04-24 2013-10-30 三星电子株式会社 存储系统、存储器件、存储控制器及操作其的方法

Also Published As

Publication number Publication date
CA2932653A1 (en) 2015-07-16
EP3092568A1 (en) 2016-11-16
US20180114553A1 (en) 2018-04-26
JP2017503303A (ja) 2017-01-26
US9881656B2 (en) 2018-01-30
TW201543498A (zh) 2015-11-16
AR099040A1 (es) 2016-06-22
BR112016015961A2 (pt) 2017-08-08
KR20160106096A (ko) 2016-09-09
US20150194197A1 (en) 2015-07-09
CN105917312A (zh) 2016-08-31
WO2015105948A1 (en) 2015-07-16
US10224081B2 (en) 2019-03-05

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