CN105908139B - 电子部件用层叠布线膜和被覆层形成用溅射靶材 - Google Patents

电子部件用层叠布线膜和被覆层形成用溅射靶材 Download PDF

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Publication number
CN105908139B
CN105908139B CN201610105605.6A CN201610105605A CN105908139B CN 105908139 B CN105908139 B CN 105908139B CN 201610105605 A CN201610105605 A CN 201610105605A CN 105908139 B CN105908139 B CN 105908139B
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China
Prior art keywords
atom
coating
sputtering target
target material
aforementioned
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CN201610105605.6A
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Chinese (zh)
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CN105908139A (zh
Inventor
村田英夫
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Proterial Ltd
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Hitachi Metals Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/002—Alloys based on nickel or cobalt with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/005—Alloys based on nickel or cobalt with Manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
CN201610105605.6A 2015-02-25 2016-02-25 电子部件用层叠布线膜和被覆层形成用溅射靶材 Active CN105908139B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015034793 2015-02-25
JP2015-034793 2015-02-25

Publications (2)

Publication Number Publication Date
CN105908139A CN105908139A (zh) 2016-08-31
CN105908139B true CN105908139B (zh) 2018-06-29

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ID=56745135

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CN201610105605.6A Active CN105908139B (zh) 2015-02-25 2016-02-25 电子部件用层叠布线膜和被覆层形成用溅射靶材

Country Status (4)

Country Link
JP (1) JP6681019B2 (ja)
KR (1) KR101804660B1 (ja)
CN (1) CN105908139B (ja)
TW (1) TWI583801B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6997945B2 (ja) * 2016-12-27 2022-01-18 日立金属株式会社 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材
WO2018207770A1 (ja) * 2017-05-09 2018-11-15 三菱マテリアル株式会社 ＣｕＮｉ合金スパッタリングターゲットおよびＣｕＮｉ合金粉末
JP6627993B2 (ja) * 2018-03-01 2020-01-08 三菱マテリアル株式会社 Ｃｕ−Ｎｉ合金スパッタリングターゲット
WO2019167564A1 (ja) * 2018-03-01 2019-09-06 三菱マテリアル株式会社 Ｃｕ－Ｎｉ合金スパッタリングターゲット
JP7385370B2 (ja) * 2019-05-07 2023-11-22 山陽特殊製鋼株式会社 Ｎｉ系スパッタリングターゲット及び磁気記録媒体
CN115637412A (zh) * 2022-09-27 2023-01-24 芜湖映日科技股份有限公司 一种钼合金靶材及其制作工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1763616A (zh) * 2004-10-12 2006-04-26 精工爱普生株式会社 图案及配线形成方法、半导体装置、tft器件、电光学装置
CN102956158A (zh) * 2011-08-19 2013-03-06 日立金属株式会社 电子部件用层叠布线膜以及覆盖层形成用溅射靶材

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478895B1 (en) * 2001-04-25 2002-11-12 Praxair S.T. Technology, Inc. Nickel-titanium sputter target alloy
JP2004061844A (ja) * 2002-07-29 2004-02-26 Hitachi Metals Ltd 表示装置用Ａｇ合金膜、表示装置用Ａｇ合金系反射膜、平面表示装置およびＡｇ合金膜形成用スパッタリングターゲット材
JP4496518B2 (ja) 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP2005079130A (ja) * 2003-08-28 2005-03-24 Hitachi Metals Ltd 薄膜配線層
US7605481B2 (en) * 2003-10-24 2009-10-20 Nippon Mining & Metals Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
JP4730662B2 (ja) * 2005-03-02 2011-07-20 日立金属株式会社 薄膜配線層
JP4655281B2 (ja) * 2005-03-29 2011-03-23 日立金属株式会社 薄膜配線層
WO2010013636A1 (ja) * 2008-07-29 2010-02-04 株式会社アルバック 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法
JP5203908B2 (ja) * 2008-12-04 2013-06-05 新日鉄住金マテリアルズ株式会社 Ｎｉ−Ｍｏ系合金スパッタリングターゲット板
JP5532767B2 (ja) * 2009-09-04 2014-06-25 大同特殊鋼株式会社 Ｃｕ電極保護膜用ＮｉＣｕ合金ターゲット材
JP2013038393A (ja) * 2011-07-13 2013-02-21 Hitachi Metals Ltd 電子部品用積層配線膜

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1763616A (zh) * 2004-10-12 2006-04-26 精工爱普生株式会社 图案及配线形成方法、半导体装置、tft器件、电光学装置
CN102956158A (zh) * 2011-08-19 2013-03-06 日立金属株式会社 电子部件用层叠布线膜以及覆盖层形成用溅射靶材

Also Published As

Publication number Publication date
TWI583801B (zh) 2017-05-21
CN105908139A (zh) 2016-08-31
TW201631172A (zh) 2016-09-01
JP6681019B2 (ja) 2020-04-15
KR20160103933A (ko) 2016-09-02
KR101804660B1 (ko) 2017-12-04
JP2016157925A (ja) 2016-09-01

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