CN105895736B - 一种耐高温柔性衬底微晶硅薄膜的制备方法 - Google Patents
一种耐高温柔性衬底微晶硅薄膜的制备方法 Download PDFInfo
- Publication number
- CN105895736B CN105895736B CN201610144362.7A CN201610144362A CN105895736B CN 105895736 B CN105895736 B CN 105895736B CN 201610144362 A CN201610144362 A CN 201610144362A CN 105895736 B CN105895736 B CN 105895736B
- Authority
- CN
- China
- Prior art keywords
- flexible substrate
- temperature
- film
- microcrystalline silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 229910021424 microcrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 66
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 125000005487 naphthalate group Chemical group 0.000 claims abstract description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 13
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 12
- 239000008246 gaseous mixture Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005273 aeration Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 230000002000 scavenging effect Effects 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000004062 sedimentation Methods 0.000 abstract description 4
- 230000007812 deficiency Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- -1 dioctyl phthalate Glycol ester Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610144362.7A CN105895736B (zh) | 2016-03-15 | 2016-03-15 | 一种耐高温柔性衬底微晶硅薄膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610144362.7A CN105895736B (zh) | 2016-03-15 | 2016-03-15 | 一种耐高温柔性衬底微晶硅薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105895736A CN105895736A (zh) | 2016-08-24 |
CN105895736B true CN105895736B (zh) | 2017-06-23 |
Family
ID=57014284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610144362.7A Expired - Fee Related CN105895736B (zh) | 2016-03-15 | 2016-03-15 | 一种耐高温柔性衬底微晶硅薄膜的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105895736B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101634918A (zh) * | 2008-07-24 | 2010-01-27 | 廖翔霖 | 导电膜整合结构 |
CN102064235A (zh) * | 2009-11-17 | 2011-05-18 | 杜邦太阳能有限公司 | 用于制作太阳能面板的工艺和由其制作的太阳能面板 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK1332238T3 (da) * | 2000-10-09 | 2009-07-20 | Hueck Folien Gmbh | Metalliseret film, fremgangsmåde til fremstilling heraf samt anvendelse heraf |
EP1936644A3 (en) * | 2006-12-22 | 2011-01-05 | Sony Deutschland Gmbh | A photovoltaic cell |
KR101489161B1 (ko) * | 2010-07-30 | 2015-02-06 | 주식회사 잉크테크 | 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막 |
CN102832348B (zh) * | 2012-08-28 | 2015-07-29 | 浙江大学 | 一种图形化电极、制备方法和有机太阳能电池 |
-
2016
- 2016-03-15 CN CN201610144362.7A patent/CN105895736B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101634918A (zh) * | 2008-07-24 | 2010-01-27 | 廖翔霖 | 导电膜整合结构 |
CN102064235A (zh) * | 2009-11-17 | 2011-05-18 | 杜邦太阳能有限公司 | 用于制作太阳能面板的工艺和由其制作的太阳能面板 |
Non-Patent Citations (1)
Title |
---|
可用于沉积透明导电氧化物薄膜的柔性衬底研究进展;刘丹,黄友奇;《材料导报A》;20121231;第26卷(第12期);全文 * |
Also Published As
Publication number | Publication date |
---|---|
CN105895736A (zh) | 2016-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102943241B (zh) | 卷对卷柔性pi衬底上制备掺钠吸收层的方法 | |
CN106558650A (zh) | 一种柔性铜铟镓硒/钙钛矿叠层太阳能电池的制备方法 | |
CN110416356B (zh) | 一种硒化锑薄膜太阳能电池的制备方法 | |
CN105679941A (zh) | 一种基于p型铜铁矿结构半导体材料的平面结构钙钛矿太阳能电池及其制备 | |
CN107195784A (zh) | 一种快速氧化处理钙钛矿太阳电池空穴传输层的方法 | |
CN102185012A (zh) | 镀氮化硅减反射膜的方法 | |
CN104167469B (zh) | 一种SnS2/SnS异质结薄膜太阳能电池的一次性制备方法 | |
CN106159095A (zh) | 一种钙钛矿太阳能电池的制备方法及钙钛矿太阳能电池 | |
CN112038439A (zh) | 一种CZTSSe柔性双面太阳电池及其制备方法 | |
CN103258919B (zh) | 非晶硅与多晶硅薄膜界面钝化及制备spa结构hit电池的方法 | |
CN102153288A (zh) | 一种择尤取向硫化二铜薄膜的制备方法 | |
CN105428539B (zh) | 一种控制退火时压强气氛提高其光电性能的钙钛矿太阳能电池吸收层的制备方法 | |
CN109545975B (zh) | 绒面均匀钙钛矿膜的液膜抑爬原位冷冻升华析晶制备方法 | |
CN105161572B (zh) | 一种铜锌锡硫太阳电池吸收层的墨水多层涂敷制备方法 | |
CN107240645B (zh) | 钙钛矿-纳米锗颗粒有机-无机复合太阳能电池的制备 | |
CN101872685B (zh) | 固态染料敏化纳米晶微晶硅复合薄膜太阳电池及其制备方法 | |
CN101609862A (zh) | 一种降低绒面单晶硅片表面反射率的方法 | |
CN105895736B (zh) | 一种耐高温柔性衬底微晶硅薄膜的制备方法 | |
CN105118883B (zh) | 一种低镉cigs基薄膜太阳能电池及其制备方法 | |
CN106784146A (zh) | 一种甲胺铅碘/可调带隙非晶硅锗叠层薄膜电池组装技术 | |
CN108512486A (zh) | 一种柔性光电热复合电池 | |
CN206098456U (zh) | 一种钙钛矿太阳能电池 | |
CN105304340A (zh) | 染料敏化太阳能电池用多孔二氧化钛薄膜的制备方法 | |
CN109888100A (zh) | 一种铷掺杂氧化镍薄膜的制备及作为空穴传输层在钙钛矿太阳能电池中的应用 | |
CN109449256A (zh) | 一种太阳能电池用硅基薄膜的低成本生产方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Qiaozhen Inventor before: Ye Xianlong Inventor before: Lin Dawei |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20170417 Address after: 450000 Gongyi Province, Zhengzhou City, the town of Chi Tian Zhuang Village Li Xiang lane, No. 13 Applicant after: Li Qiaozhen Address before: 315000 Zhejiang province Ningbo City Jiangdong District Qixin Road No. 167 5 floor Applicant before: NINGBO JIANGDONG POMONA ELECTRONIC TECHNOLOGY CO., LTD. |
|
TA01 | Transfer of patent application right | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Huang Ying Inventor before: Li Qiaozhen |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20170523 Address after: Two road 518071 Guangdong city of Shenzhen province Nanshan District Xili Kan industrial building D No. 11 Applicant after: Shenzhen Gold Technology Co., Ltd. Address before: 450000 Gongyi Province, Zhengzhou City, the town of Chi Tian Zhuang Village Li Xiang lane, No. 13 Applicant before: Li Qiaozhen |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation method for high-temperature-resistant flexible substrate-included microcrystalline silicon film Effective date of registration: 20171013 Granted publication date: 20170623 Pledgee: Shenzhen high tech investment and financing Company limited by guarantee Pledgor: Shenzhen Gold Technology Co., Ltd. Registration number: 2017990000956 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180108 Granted publication date: 20170623 Pledgee: Shenzhen high tech investment and financing Company limited by guarantee Pledgor: Shenzhen Gold Technology Co., Ltd. Registration number: 2017990000956 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation method for high-temperature-resistant flexible substrate-included microcrystalline silicon film Effective date of registration: 20180108 Granted publication date: 20170623 Pledgee: Shenzhen high tech investment and financing Company limited by guarantee Pledgor: Shenzhen Gold Technology Co., Ltd. Registration number: 2018990000021 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170623 Termination date: 20200315 |
|
CF01 | Termination of patent right due to non-payment of annual fee |