CN102064235A - 用于制作太阳能面板的工艺和由其制作的太阳能面板 - Google Patents
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Abstract
本发明提供一种用于制作太阳能面板的工艺。本发明的所述工艺避免了使用激光划线，因此其在制作柔性太阳能面板中尤其有用。另外，本发明提供用于连接太阳能面板中的第一电极和第二电极的替代方案。
Description
技术领域
本发明涉及制造薄膜太阳能面板。更特定来说，本发明涉及为避免衬底降级而使用双层工艺来制造薄膜太阳能面板。
背景技术
光伏电池或太阳能电池将光能转换为电能。标准太阳能电池包含透明衬底、透明第一电极、光电转换元件和第二电极，其依序安置于衬底上。用于透明衬底的典型材料是玻璃和塑料材料。
近来，柔性太阳能面板由于其使用简单、便携性和多功能性而变得流行。在柔性太阳能面板中，聚合物材料(尤其是聚酰亚胺或聚萘二甲酸乙二醇酯(PEN))以及例如不锈钢片等薄金属膜通常用作衬底。然而，由于聚合物的不同性质，将用于具有玻璃的太阳能面板的常规工艺应用于聚合物衬底或薄金属膜衬底的情况是不实际的。举例来说，通常用于对电池进行图案化的激光划线无法应用于聚合物或薄衬底上，因为所产生的热将严重损坏聚合物或薄衬底。
制造柔性太阳能面板的标准工艺通常包含用金属条带将若干小电池互连在一起以形成较高电压太阳能面板。大多数人在制作柔性太阳能面板时不采用单片式方法的原因在于柔性衬底太脆弱而无法承受激光或机械划线。例如标准光刻等其它工艺太昂贵而无法在大量生产中使用。因此，需要一种用于制作柔性太阳能面板的替代工艺。
发明内容
本发明提供一种用于在不使用激光划线或其它发热工艺的情况下制作薄膜太阳能面板的新颖工艺，且因此尤其有用于制作柔性太阳能面板。
本发明的工艺包括以下步骤：
(a)提供上面具有经图案化第一电极的衬底；
(b)在具有经图案化第一电极的所述衬底上依序沉积第一材料的层和第二材料的层；
(c)在所述第二材料的所述层上且在多个导电通道处形成多个经图案化光致抗蚀剂；
(d)对所述第一材料的所述层和所述第二材料的所述层进行湿式蚀刻以在所述导电通道处形成多个T形结构，其中所述第一材料的蚀刻速率高于所述第二材料的蚀刻速率；
(e)在具有所述经图案化第一电极的所述衬底上沉积至少一个半导体膜以形成光电转换元件；
(f)在所述半导体膜上沉积至少一个第二电极，以便在所述导电通道处将所述第二电极电连接到所述第一电极；以及
(g)对所述第二电极和半导体膜进行划线以分离个别电池而形成太阳能面板。
本发明的另一目的是提供用于连接太阳能面板中的第一电极与第二电极的替代方案。
本发明的又一目的是提供一种其中包括T形结构的太阳能面板。
附图说明
图1(a)到图1(f)展示根据本发明的用于单位电池的示意性工艺流程。
具体实施方式
下文参考附图借助于实施例来详细说明本发明，附图既定不限制本发明的范围。将明了，对所属领域的技术人员显而易见的任何修改或更改均属于说明书的揭示内容的范围内。
本发明的工艺的第一步骤是提供上面具有经图案化第一电极12的衬底11，如图1(a)所示。经图案化第一电极12可根据需求而用作前部电极或后部电极。衬底的材料可为例如玻璃、硅、金属和聚合物等材料。在本发明的此实施例中，优选材料是柔性聚合物，优选为聚酰亚胺或PEN。经图案化第一电极的制作是常规技术，且已在各种公开案中论述，例如第5,334,259号美国专利。一般来说，柔性太阳能电池是使用衬底架构来制造，原因是例如聚酰亚胺等柔性衬底缺乏透明度。
在本发明的此实施例中，用于第一电极的材料是透明导电氧化物(TCO)。合适的TCO材料包含Ag、Al、Cu、Cr、Zn、Mo、Wo、Ca、Ti、In、Sn、Ba、Ti或Ni的金属氧化物，优选为Zn或Sn的氧化物或BaTiO。TCO层可任选地以例如Al、Ga、Sb等金属来掺杂，例如ZnO:Al(AZO)、ZnO:Ga(GZO)和SnO2:Sb(ATO)。TCO通常是通过激光划线或蚀刻技术来图案化。然而，当衬底为聚合物时，应避免激光划线，因为激光划线产生的热对衬底造成严重损害。
不同于其中光电转换层直接沉积于具有经图案化电极的衬底上的常规工艺，依序沉积第一材料层13和第二材料层14(见图1(b))。所述层在稍后步骤中被图案化之后将在半导体膜的沉积期间充当掩模。在某些优选实施例中，所述层还提供第一与第二电极之间的导电连接，这将在稍后描述。
合适的第一材料和第二材料包含(但不限于)金属、氧化物、氮化物、碳纳米管或聚合物。第一和第二材料的选择仅受到蚀刻选择性的限制，因为由第一和第二材料组成的T形结构应通过湿式蚀刻来形成。对第一材料的蚀刻速率需要比对第二材料的蚀刻速率高。合适的蚀刻选择性不受限制，且由T形结构的所需方面来确定，例如较高的蚀刻选择性导致具有较大上部部分的T形结构，且较低的蚀刻选择性导致具有相对较小上部部分的T形结构。通常，第一材料比第二材料的蚀刻选择性在2∶1到1000∶1的范围内。
在本发明的优选实施例中，第一材料是导电材料，以便即使第一电极和第二电极未直接连接也通过第一材料提供第一电极与第二电极之间的电连接。导电材料包含(但不限于)金属、碳纳米管或导电聚合物。
在本发明的另一优选实施例中，第一和第二材料均是导电材料，以便即使第一和第二电极未直接连接且第二电极未直接连接到第一材料也通过第一和第二材料提供第一电极与第二电极之间的电连接。
第二材料的层的厚度不是关键的，且范围是从100nm到30μm。第一材料的层的厚度应大于将稍后沉积的半导体膜的厚度，使得T形结构(稍后形成)上的半导体膜和第一电极上的半导体膜断开。这允许第二电极形成为在导电通道处与第一电极或T形结构连接。在本发明的一个实施例中，第一材料的层的厚度比半导体膜的厚度至少大200nm。而且，第一材料的层的合适厚度在300nm到30μm的范围内。
在第一材料的层和第二材料的层的沉积之后，沉积且图案化光致抗蚀剂，以便形成经图案化光致抗蚀剂15。经图案化光致抗蚀剂15位于第一电极存在的区中，如图1(c)所示。具体来说，经图案化光致抗蚀剂15形成于导电通道处。光致抗蚀剂的沉积是此项技术中已知的技艺，且图案化可通过例如光刻、印刷、狭缝涂覆和无掩模激光图案化等任何常规方式来完成。
在光致抗蚀剂的图案化之后，使用湿式蚀刻。由于第一和第二材料的选择性以及湿式蚀刻的各向同性性质，形成T形结构。通过蚀刻剂(包含化学品和蚀刻膏)进行的湿式蚀刻也是此项技术中已知的技艺。
在导电通道处形成T形结构之后，随后沉积至少一个半导体膜16以形成光电转换元件。光电转换元件可为例如单接合点、串联接合点或三接合点元件等任何类型，且其可通过在例如第5,334,259号美国专利等现有技术参考中描述的任何合适方式来制作。可能的情况是在充当掩模的T形结构下方的第一电极未完全由半导体膜覆盖，即，第一电极的表面的至少部分暴露，且每一第一电极的未由半导体膜覆盖的区的宽度通常在10μm到200μm的范围内。这允许第一电极在导电通道处直接与第二电极连接。然而，第一电极与第二电极的此直接接触在本发明的某些优选实施例中不是必要的。
在本发明的一个优选实施例中，T形结构的第一材料是导电的，因此第一电极与第二电极之间的电连接可经由T形结构的第一材料来完成。
在本发明的更优选实施例中，T形结构的第一和第二材料均是导电的。或者，T形结构的第一和第二材料根据需求是不导电的。只要第一电极和T形结构未均由半导体膜覆盖，第一电极和第二电极就可电连接。
在本发明的一个实施例中，光电转换元件是非晶硅薄膜光伏装置，且非晶硅优选通过DC偏置等离子增强型化学气相沉积(PECVD)来沉积。在另一实施例中，光电转换元件是(二)硒化铜铟镓(CIGS)薄膜光伏装置，且CIGS优选通过共蒸发或共溅镀来沉积。两种情况的重点在于光电转换元件不完全阻断第一与第二电极之间的导电路径。
在形成光电转换元件之后，随后沉积导电膜17作为第二电极。倾斜溅镀是优选的，因此可填充T形结构下方的区，如图1(f)所示。也可应用具有良好阶梯覆盖能力的其它方法，例如金属有机物化学气相沉积(MOCVD)。倾斜溅镀的角度不受限制，只要第二电极与第一电极或T形结构的导电部分接触即可。用于制造第二电极的其它工艺条件可在现有技术参考中找到，且类似于针对第一电极的先前描述。
应注意，半导体材料通常对环境敏感。举例来说，当非晶硅暴露于大气时，其快速吸收湿气且可靠性将受到显著影响。根据本发明的工艺，沉积半导体膜的步骤之后直接是沉积用于第二电极的导电膜的步骤，因此半导体膜暴露于大气的持续时间将显著减少。因此，根据本发明的工艺提供优于常规方案的额外优点。
最终，第二电极膜和半导体膜经受激光划线或蚀刻(例如，蚀刻膏)以分离个别电池(图中未图示)，且获得太阳能面板。
本发明还提供具有新颖架构的太阳能面板。所述太阳能面板包括衬底、第一电极、在每一第一电极上的由第一材料和第二材料组成的T形结构、光电转换元件以及第二电极。
本发明的太阳能面板的优选实施例是通过上文已描述的根据本发明的工艺来制备。
实例
提供聚酰亚胺作为衬底。通过激光划线技术在衬底上图案化第一电极。
针对本发明的此实施例选择Al作为第一材料，而选择Ag作为第二材料。根据需求通过溅射或蒸发而在衬底上依序沉积这两种材料。第一和第二材料的厚度分别为1μm和500nm。
随后在具有经图案化第一电极的区中形成经图案化光致抗蚀剂，即，在导电通道处形成经图案化光致抗蚀剂。施加通过基于KOH的蚀刻剂进行的湿式蚀刻以形成T形结构，如图1(d)所示。Al(第一材料)比Ag(第二材料)的蚀刻速率为约5∶1。
最终，通过PECVD沉积非晶硅膜以形成光电转换元件，且通过溅射沉积Al以形成第二电极层。对第二电极层和转换元件进行激光划线以形成根据本发明的太阳能面板。
Claims (10)
1.一种用于制作柔性太阳能面板的工艺，其包括以下步骤：
(a)提供上面具有经图案化第一电极的衬底；
(b)在所述具有经图案化第一电极的衬底上依序沉积第一材料的层和第二材料的层；
(c)在所述第二材料的所述层上且在多个导电通道处形成多个经图案化光致抗蚀剂；
(d)对所述第一材料的所述层和所述第二材料的所述层进行湿式蚀刻以在所述导电通道处形成多个T形结构，其中所述第一材料的蚀刻速率高于所述第二材料的蚀刻速率；
(e)在具有所述经图案化第一电极的所述衬底上沉积至少一半导体膜以形成光电转换元件；
(f)在所述半导体膜上沉积至少一个第二电极，以便在所述导电通道处将所述第二电极电连接到所述第一电极；以及
(g)对所述第二电极和半导体膜进行划线以分离个别电池而形成太阳能面板。
2.根据权利要求1所述的工艺，其中在步骤(e)中沉积的所述半导体膜不完全覆盖所述第一电极，且所述第一电极与所述第二电极直接连接。
3.根据权利要求2所述的工艺，其中每一第一电极的未由所述半导体膜覆盖的区的宽度在10μm到200μm的范围内。
4.根据权利要求1所述的工艺，其中所述第一材料是导电的，且步骤(e)中的所述半导体材料完全覆盖所述第一电极，但不完全覆盖所述T形结构的所述第一材料，且所述T形结构连接所述第一电极和所述第二电极两者。
5.根据权利要求1所述的工艺，其中所述第一材料和所述第二材料均是导电的，且步骤(e)中沉积的所述半导体膜完全覆盖所述第一电极和所述T形结构的所述第一材料，但不完全覆盖所述T形结构的所述第二材料，且所述T形结构连接所述第一电极和所述第二电极。
6.根据权利要求1所述的工艺，其中所述第一材料和所述第二材料独立地选自金属、氧化物、氮化物、碳纳米管或聚合物。
7.根据权利要求1所述的工艺，其中所述第一材料比所述第二材料的蚀刻选择性在2∶1到1000∶1的范围内。
8.根据权利要求1所述的工艺，其中步骤(b)中沉积的所述第一材料的所述层的厚度大于步骤(e)中沉积的所述半导体膜的厚度。
9.根据权利要求13所述的工艺，其中所述第一材料的所述层的厚度是300nm到30μm，且所述第二材料的所述层的厚度是100μm到30nm。
10.一种太阳能面板，其包括衬底、第一电极、在所述第一电极中的每一者上的由第一材料和第二材料组成的T形结构、光电转换元件以及第二电极。
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