CN105895649B - A method of reducing CIS device noises by changing SAB film quality - Google Patents
A method of reducing CIS device noises by changing SAB film quality Download PDFInfo
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- CN105895649B CN105895649B CN201610218970.8A CN201610218970A CN105895649B CN 105895649 B CN105895649 B CN 105895649B CN 201610218970 A CN201610218970 A CN 201610218970A CN 105895649 B CN105895649 B CN 105895649B
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- -1 zirconia nitride Chemical class 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 9
- 229910008062 Si-SiO2 Inorganic materials 0.000 abstract description 4
- 229910006403 Si—SiO2 Inorganic materials 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910008065 Si-SiO Inorganic materials 0.000 description 3
- 229910006405 Si—SiO Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Tires In General (AREA)
Abstract
The method that the invention discloses a kind of to reduce CIS device noises by changing SAB film quality prepares the SAB layers with loose film quality by using HARP techniques, changes the fine and close film quality of the SAB layers prepared in the past by pecvd process, can greatly reduce Si-SiO2Trap near interface, the scattering of phonon is reduced simultaneously, and using the thicker thickness of SAB layers prepared by HARP techniques, influence of the plasma damage to gate oxide is reduced in the technique subsequently with plasma, so as to effectively reduce each noise like of CIS products.
Description
Technical field
The present invention relates to microelectronics technologies, more particularly, to one kind by changing SAB film quality to reduce CIS devices
The method of each noise like of part.
Background technology
The noise of CIS (CMOS Image Sensor, cmos image sensor) device is to restrict its performance, quality and can
By the key factor of property, it drastically influences the reliability of deep submicron integrated circuit.Therefore, each noise like (noise) is reduced
The important directions that always CIS properties of product are promoted.
Generally, it is considered that the irregular variation of the noise of CIS devices carrier density or mobility in raceway groove.The former takes
Certainly in Si-SiO2Nearby trap is captured and is emitted, i.e. Si-Si0 to the heat shock of carrier at interface2Interface state density and its in forbidden band
Position in energy level；And the latter is then determined by carrier and the scattering of phonon group.Therefore, the two of CIS device noise performances is promoted
A important directions exactly reduce interface state density, while reducing the scattering of carrier and phonon.In addition, with process
Reduce the reduction with grid medium thickness, channel noise is also just gradually increasing caused by bound trap.Bound trap in gate medium
Number also constantly reduces, and when as low as active area only has one or several traps to device size, just will appear the prodigious ditch of amplitude
Road electric current fluctuation, and when constant be in random distribution waveform noise.
In the past due to being located at SAB (salicide block layer, the autoregistration silication of CIS products pixel region (pixel)
Object barrier layer) it is in direct contact with surface active area (AA) of large area so that SIN has adsorbed on barrier layer a large amount of electronics, to
Affect the pixel performance on the surfaces pixel region AA.Therefore, a large amount of electronics is adsorbed on the barrier layers SIN in order to prevent, at present CIS devices
SAB generally take comparatively dense PECVD (plasma enhanced chemical deposition) pure zirconia film.
In PECVD depositing operations, plasma (Plasma) can be introduced.Although no longer long film after deposition,
But reaction chamber is still in the environment of plasma.Although also, turned off the former key reaction air-flow being passed through after depositing,
But still it will continue to the Ar being passed through in Primordial Qi stream and 02, while for exciting RF (radio frequency) source power of plasma to reduce.This
When reaction chamber plasma will generate a large amount of high energy UV (ultraviolet) photons.If these photon energies are more than SiO2Gate oxide
Energy gap, SiO2After the valence-band electrons of material absorb photon, conduction band will be entered by valence band transition, electron hole pair is generated, makes
It is in the conduction state to obtain gate oxide, its insulating capacity is caused to be greatly reduced.When the charge collected on grid is more and more, grid electricity
Pressure is correspondingly higher and higher, and gate oxide is eventually caused to generate FN (Fowler-Nordheim) tunnelling.When FN tunnelling currents etc.
When the plasma current being collected into, the voltage of a stable state is will appear on grid.And electronics is injected into gate oxide by substrate
After, the kinetic energy of bigger will be obtained under the action of grid electric field, these high energy electrons will produce trap and interfacial state, these traps
With interfacial state in the course of work of CIS devices, each noise like can be formed.
Invention content
It is an object of the invention to overcome drawbacks described above of the existing technology, provide a kind of by changing SAB film quality drop
The method of low CIS device noises.
To achieve the above object, technical scheme is as follows：
A method of CIS device noises being reduced by changing SAB film quality, are included the following steps：
Step 1：A substrate is provided, the substrate at least has grid and source, drain structure；
Step 2：The SAB layers with loose film quality are formed in the substrate surface；
Step 3：Annealing.
Preferably, in step 2, using HARP techniques in SAB layer of the substrate surface deposition with loose film quality.
Preferably, described to be annealed into high annealing in step 3.
Preferably, described to be annealed into RTA high annealings.
Preferably, in D2RTA high annealings are carried out in atmosphere.
Preferably, further include step 4：Described SAB layers is patterned, exposes and needs to form self-aligned silicide
Region；And step 5：Self-alignment silicide layer is formed over the substrate.
Preferably, described SAB layers is pure zirconia nitride layer.
Preferably, the pure zirconia nitride layer is silicon oxide layer.
It can be seen from the above technical proposal that the present invention prepares the SAB layers with loose film quality by using HARP techniques,
The fine and close film quality of the SAB layers prepared in the past by pecvd process is changed, Si-SiO can be greatly reduced2Trap near interface, drops simultaneously
Sub scattering in a low voice, and using the thicker thickness of SAB layers prepared by HARP techniques, in the technique subsequently with plasma
Influence of the plasma damage (plasma damage) to gate oxide is reduced, is made an uproar so as to effectively reduce all kinds of of CIS products
Sound.
Description of the drawings
Fig. 1 is that the present invention is a kind of reducing the method flow diagram of CIS device noises by changing SAB film quality.
Specific implementation mode
Below in conjunction with the accompanying drawings, the specific implementation mode of the present invention is described in further detail.
In specific implementation mode of the invention below, referring to Fig. 1, Fig. 1 is of the invention a kind of by changing SAB film quality
Reduce the method flow diagram of CIS device noises.As shown in Figure 1, a kind of of the present invention reduces CIS devices by changing SAB film quality
The method of noise, it may include following steps：
Step 1：A substrate is provided, the substrate at least has grid and source, drain structure.
The method of the present invention is by changing SAB film quality, to reduce each noise like of CIS devices.First, it is being used to prepare
It is made on the substrate of CIS devices and forms grid and source, drain structure, may also comprise other device architectures for meeting design rule.
Step 2：The SAB layers with loose film quality are formed in the substrate surface.
Then, it needs to form the SAB layers with loose film quality in the substrate surface, it is existing by PECVD works to change
Prepared by skill has the SAB layers of fine and close film quality, because the SAB layers with fine and close film quality are unprofitable to reduce Si-SiO in CIS devices2
Interface state density, to also can not just promote the noiseproof feature of CIS devices.
As a preferred embodiment, HARP (high-aspect-ratio) technique can be used in this step, heavy in the substrate surface
SAB layer of the product with loose film quality.Described SAB layers can be used pure zirconia nitride layer, for example, HARP techniques can be used, in the lining
Silica SAB layer of the bottom surface deposition with loose film quality.It will be obviously big by the silica SAB layer thickness of HARP process deposits
In the existing SAB layer thickness with fine and close film quality prepared using pecvd process.
Step 3：Annealing.
In this step, RTA (rapid thermal annealing) can be used, high annealing is carried out to device.Also, annealing can be in D2(deuterium)
It is carried out in atmosphere.
After carrying out high annealing, it can also continue to carry out：
Step 4：Described SAB layers is patterned, the region for needing to form self-aligned silicide is exposed.
Step 5：Self-alignment silicide layer is formed over the substrate.
Step 4 and step 5 can be used existing common process and execute, and this example repeats no more.
The above method through the invention, and after substituting the SAB films of existing densification using loose SAB films, can be with
Make D2D ions in annealing are more easy to across HARP films, to be easier effectively to be passivated Si-SiO2Interfacial state trap.
Meanwhile the existing pecvd process with plasma by being changed to the HARP without plasma by the present invention
Technique, there will be no the generations of FN tunnellings in SAB thin film deposition processes.And in the technique subsequently with plasma, by
Thickness in HARP self-aligned silicides barrier layer is thicker, it may also reduce the generation of tunneling effect, in gate oxidation stratum boundary
The probability that face generates defect will substantially reduce.
Further, since having extra H ions in SAB films after HARP depositions, these ions are in subsequent RTA techniques
Si-SiO can be pulled to2Interface and influence Si02The arrangement of interface crystal lattice, can make in interface due to lattice mismatches existing for stress
Become larger, carrier and the scattering of substrate sound group become smaller, to make its channel mobility become larger, then so that the noise of CIS devices becomes
It is small.
In conclusion the present invention by using HARP techniques prepare with loose film quality SAB layers, change in the past by
The fine and close film quality of SAB layers prepared by pecvd process, can greatly reduce Si-SiO2Trap near interface, while reducing dissipating for phonon
It penetrates, and using the thicker thickness of SAB layers prepared by HARP techniques, plasma is reduced in the technique subsequently with plasma
Influence of the bulk damage to gate oxide, so that can each noise like of CIS products be reduced to original 1/6 compared with prior art,
Greatly improve the performance of CIS products.
Above-described to be merely a preferred embodiment of the present invention, the embodiment is not to be protected to limit the patent of the present invention
Range, therefore equivalent structure variation made by every specification and accompanying drawing content with the present invention are protected, similarly should be included in
In protection scope of the present invention.
Claims (7)
1. a kind of method reducing CIS device noises by changing SAB film quality, which is characterized in that include the following steps：
Step 1：A substrate is provided, the substrate at least has grid and source, drain structure；
Step 2：The SAB layers with loose film quality are formed in the substrate surface；Wherein, using HARP techniques in the substrate
SAB layer of the surface deposition with loose film quality；
Step 3：Annealing.
2. the method according to claim 1 for reducing CIS device noises by changing SAB film quality, which is characterized in that step
It is described to be annealed into high annealing in three.
3. the method according to claim 2 for reducing CIS device noises by changing SAB film quality, which is characterized in that described
It is annealed into RTA high annealings.
4. the method according to claim 3 for reducing CIS device noises by changing SAB film quality, which is characterized in that in D2
RTA high annealings are carried out in atmosphere.
5. the method according to claim 1 for reducing CIS device noises by changing SAB film quality, which is characterized in that also wrap
It includes：
Step 4：Described SAB layers is patterned, the region for needing to form self-aligned silicide is exposed；And
Step 5：Self-alignment silicide layer is formed over the substrate.
6. the method for reducing CIS device noises by changing SAB film quality according to claim 1-5 any one, special
Sign is that described SAB layers is pure zirconia nitride layer.
7. the method according to claim 6 for reducing CIS device noises by changing SAB film quality, which is characterized in that described
Pure zirconia nitride layer is silicon oxide layer.
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| CN107123659A (en) * | 2017-06-26 | 2017-09-01 | 上海华力微电子有限公司 | The preparation method of imaging sensor |
| CN107275355B (en) * | 2017-06-26 | 2020-10-16 | 上海华力微电子有限公司 | Method for manufacturing image sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101355035A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN102709186A (en) * | 2012-01-12 | 2012-10-03 | 上海华力微电子有限公司 | Method for reducing negative bias temperature instability effect of device and manufacturing method of device |
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| JP3637332B2 (en) * | 2002-05-29 | 2005-04-13 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| US6881636B2 (en) * | 2003-07-03 | 2005-04-19 | Micron Technology, Inc. | Methods of forming deuterated silicon nitride-containing materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101355035A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN102709186A (en) * | 2012-01-12 | 2012-10-03 | 上海华力微电子有限公司 | Method for reducing negative bias temperature instability effect of device and manufacturing method of device |
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