CN107123659A - The preparation method of imaging sensor - Google Patents
The preparation method of imaging sensor Download PDFInfo
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- CN107123659A CN107123659A CN201710496360.9A CN201710496360A CN107123659A CN 107123659 A CN107123659 A CN 107123659A CN 201710496360 A CN201710496360 A CN 201710496360A CN 107123659 A CN107123659 A CN 107123659A
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- Prior art keywords
- film layers
- preparation
- imaging sensor
- sab film
- present
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000003384 imaging method Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 229910052914 metal silicate Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical group [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 230000009467 reduction Effects 0.000 abstract description 5
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention provides a kind of preparation method of imaging sensor, including：Semiconductor substrate is provided；Form SAB film layers on the semiconductor substrate using furnace process；Thermal anneal process is carried out to the SAB film layers.In the present invention, using furnace process formation SAB film layers, after being substituted using furnace process, due to there is the SAB film layers of bump contact that plasma damage is not present in preparation process with silicon face, the probability of silicon face formation dangling bonds is substantially reduced, and is difficult to adsorb electronics when CIS works, and the probability reduction of current signal is detected in the case of details in a play not acted out on stage, but told through dialogues, white point is not easily formed, white pixel performance is therefore greatly increased.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, more particularly to a kind of preparation side of imaging sensor
Method.
Background technology
CIS (CMOS Image Sensor, cmos image sensor) belongs to photoelectric component, and CIS is due to its manufacturing process
It is compatible with existing integrated circuit fabrication process, while its performance has very than original charge coupling device (CCD) imaging sensor
Many advantages, and it is increasingly becoming the main flow of imaging sensor.The white pixel (White Pixel) of cmos image sensor is to restrict it
One of performance, key factor of q＆r, reduction white pixel are always an important side of CIS properties of product lifting
To.
Due to the SAB (salicide block layer, self-aligned silicide barrier layer) positioned at CIS product pixel regions with
Active area (AA) surface of large area is directly contacted in substrate, and substantial amounts of electronics has been adsorbed on barrier layer, so as to have impact on pixel region
The pixel performance on AA surfaces.Therefore, in order to prevent barrier layer from adsorbing substantial amounts of electronics, the SAB of current CIS devices typically take compared with
For fine and close PECVD (plasma enhanced chemical deposition) pure zirconia film.
In PECVD depositing operations, plasma (Plasma) can be introduced, the plasma damage (plasma brought
Damage, PID) so that easily causing siloxy surface forms substantial amounts of dangling bonds.The presence of these dangling bonds is easily in CIS productions
Product adsorb photoelectron when working (in the case of bright field), with reference to shown in Fig. 1, between the source-drain area 11 formed in substrate 10
Channel region (lower zone of grid 12) bound electron, and in the case of details in a play not acted out on stage, but told through dialogues, these photoelectrons are possible to be released,
CIS product surfaces formation leak channel, so in the case of details in a play not acted out on stage, but told through dialogues, is also possible to detect certain electric current letter in output end
Number, " DN " value is read, " white point ", i.e. white pixel is formed.
The content of the invention
It is an object of the invention to provide the preparation method of imaging sensor, solve imaging sensor in the prior art and exist
The technical problem of white point.
In order to solve the above technical problems, the present invention provides a kind of preparation method of imaging sensor, including：
Semiconductor substrate is provided；
Form SAB film layers on the semiconductor substrate using furnace process；
Thermal anneal process is carried out to the SAB film layers.
Further, the SAB film layers are silicon oxide layer.
Further, the thickness of the SAB film layers is
Further, the furnace process prepares temperature that the SAB film layers use for 500 DEG C~600 DEG C.
Further, the temperature that the thermal anneal process is used is 500 DEG C~800 DEG C.
Further, there is source-drain electrode and the grid positioned at semiconductor substrate surface, the SAB in the Semiconductor substrate
Film layer covers the source-drain electrode and the grid.
Further, in addition to：
The SAB film layers are patterned, the grid and source-drain electrode is exposed.
Self-aligned metal silicate is formed on the grid and source-drain electrode exposed.
Further, the self-aligned metal silicate is tungsten silicide.
Compared with prior art, the preparation method of imaging sensor of the invention has the advantages that：
In the present invention, using furnace process formation SAB film layers, after being substituted using furnace process, due to having greatly with silicon face
Plasma damage is not present in the SAB film layers of contact area in preparation process, and the probability of silicon face formation dangling bonds drops significantly
It is low, it is difficult to adsorb electronics when CIS works, the probability reduction of current signal is detected in the case of details in a play not acted out on stage, but told through dialogues, it is not easy to shape
Into white point, white pixel performance is therefore greatly increased.
Brief description of the drawings
Fig. 1 fetters photoelectronic schematic diagram for dangling bonds in the prior art；
Fig. 2 is the flow chart of imaging sensor preparation method in one embodiment of the invention；
Fig. 3 is the structural representation for forming SAB film layers in one embodiment of the invention in Semiconductor substrate；
Fig. 4 is the structural representation of graphical SAB film layers in one embodiment of the invention；
Fig. 5 is the structural representation of formation self-aligned silicide in one embodiment of the invention；
Fig. 6 is the comparing result of prior art and the white pixel performance of the present invention.
Embodiment
The preparation method of the imaging sensor of the present invention is described in more detail below in conjunction with schematic diagram, wherein table
Show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and still
Realize the advantageous effects of the present invention.Therefore, description below is appreciated that for the widely known of those skilled in the art, and
It is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The core concept of the present invention is, using furnace process formation SAB film layers, after being substituted using furnace process, due to
Plasma damage, silicon face formation dangling bonds is not present in the SAB film layers for having bump contact with silicon face in preparation process
Probability substantially reduce, be difficult to adsorb electronics when CIS works, be detected in the case of details in a play not acted out on stage, but told through dialogues current signal probability drop
Low, it is not easy to form white point, white pixel performance is therefore greatly increased.
The preparation method of the imaging sensor of the present invention is described in detail below in conjunction with accompanying drawing, Fig. 2 schemes for preparation side
As the preparation flow figure of sensor, Fig. 3~Fig. 5 is the corresponding structural representation of each step, specifically includes following steps：
Step S1 is performed, there is provided Semiconductor substrate 100 with reference to shown in Fig. 3, the Semiconductor substrate 100 has grid 120
With source-drain electrode 110, the present invention in, the Semiconductor substrate 100 be, for example, P-type silicon substrate, grid 120 include grid oxic horizon and
Polysilicon layer, source-drain electrode 110 is, for example, N-type ion implanted region, and Semiconductor substrate may be used also in the other embodiment of the present invention certainly
Think N-type, source-drain electrode can also be p-type ion implanted region, and the present invention should not prepare institute as limit, and using CMOS technology
Source-drain electrode and the grid are stated, this is known to those skilled in the art, will not be described here.
Step S2 is performed, with continued reference to shown in Fig. 3, SAB films are formed in the Semiconductor substrate 100 using furnace process
Layer 130, the SAB film layers 130 are used for the barrier layer of follow-up self-aligned silicide.In the present embodiment, the SAB film layers 130 are
Pure zirconia layer, for example, silicon oxide layer, the thickness of the SAB film layers 130 isFor example,
Deng.Also, the furnace process prepares temperature that the SAB film layers use for 500 DEG C~600 DEG C, for example, 550 DEG C, 580 DEG C,
Preferably 580 DEG C.It should be noted that using furnace process formation SAB film layers, due to having bump contact with surface of silicon
SAB film layers in preparation process be not present plasma damage, surface of silicon formation dangling bonds probability substantially reduce.
Then, step S3 is performed, thermal anneal process is carried out to the SAB film layers 130, thermal anneal process can improve SAB
In film layer may but defect, in the present embodiment, the temperature that the thermal anneal process is used for 500 DEG C~800 DEG C, for example,
600 DEG C, 600 DEG C, 680 DEG C etc..
In addition, further comprising the steps of in the preparation method of the described image sensor of the present invention：
With reference to shown in Fig. 4, patterned photoresistance (not shown) is formed in the SAB film layers 130, using exposure,
The techniques such as development, photoetching are patterned to the SAB film layers 130, expose the opening of the grid 120 and source-drain electrode 110
140, the aperture position exposed is the position for being subsequently formed self-aligned silicide.
With reference to shown in Fig. 5, self-aligned metal silicate is formed on the grid 120 and source-drain electrode 110 exposed
150.Formed self-aligned silicide process be：Metal is formed in opening 140 first, afterwards, high warm is carried out to metal and is moved back
Fire processing, so that silicon and metal formation silicide.In the present embodiment, the metal uses tungsten, the autoregistration metallic silicon
Compound 150 is tungsten silicide.Afterwards, the patterned photoresistance is removed using organic solvent cleaning.
Fig. 6 is the comparing result of prior art and the white pixel performance of the present invention, from fig. 6 it can be seen that using boiler tube
Technique formation SAB film layers are substituted after pecvd process, and the probability of silicon face formation dangling bonds is substantially reduced, and is difficult to when CIS works
Electronics is adsorbed, the probability reduction of current signal is detected in the case of details in a play not acted out on stage, but told through dialogues, it is not easy to form white point so that white pixel
More than 30% can be lifted.
In summary, in the preparation method for the imaging sensor that the present invention is provided, using furnace process formation SAB film layers,
After being substituted using furnace process, due to there is the SAB film layers of bump contact that plasma is not present in preparation process with silicon face
Bulk damage, the probability of silicon face formation dangling bonds is substantially reduced, and is difficult to adsorb electronics when CIS works, in the case of details in a play not acted out on stage, but told through dialogues
It is detected the probability reduction of current signal, it is not easy to form white point, white pixel performance is therefore greatly increased.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (8)
1. a kind of preparation method of imaging sensor, it is characterised in that including：
Semiconductor substrate is provided；
Form SAB film layers on the semiconductor substrate using furnace process；
Thermal anneal process is carried out to the SAB film layers.
2. the preparation method of imaging sensor as claimed in claim 1, it is characterised in that the SAB film layers are silicon oxide layer.
3. the preparation method of imaging sensor as claimed in claim 1, it is characterised in that the thickness of the SAB film layers is
4. the preparation method of imaging sensor as claimed in claim 1, it is characterised in that the furnace process prepares described
The temperature that SAB film layers are used is 500 DEG C~600 DEG C.
5. the preparation method of imaging sensor as claimed in claim 1, it is characterised in that the temperature that the thermal anneal process is used
Spend for 500 DEG C~800 DEG C.
6. the preparation method of imaging sensor as claimed in claim 1, it is characterised in that there is source in the Semiconductor substrate
Drain and positioned at the grid of semiconductor substrate surface, the SAB film layers cover the source-drain electrode and the grid.
7. the preparation method of imaging sensor as claimed in claim 6, it is characterised in that also include：
The SAB film layers are patterned, the grid and source-drain electrode is exposed.
Self-aligned metal silicate is formed on the grid and source-drain electrode exposed.
8. the preparation method of imaging sensor as claimed in claim 7, it is characterised in that the self-aligned metal silicate is
Tungsten silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496360.9A CN107123659A (en) | 2017-06-26 | 2017-06-26 | The preparation method of imaging sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496360.9A CN107123659A (en) | 2017-06-26 | 2017-06-26 | The preparation method of imaging sensor |
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| CN107123659A true CN107123659A (en) | 2017-09-01 |
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| CN201710496360.9A Pending CN107123659A (en) | 2017-06-26 | 2017-06-26 | The preparation method of imaging sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133944A (en) * | 2017-12-20 | 2018-06-08 | 上海华力微电子有限公司 | It is a kind of to improve the method for CIS white pixel points by increasing heat treatment process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211835A (en) * | 2006-12-29 | 2008-07-02 | 东部高科股份有限公司 | CMOS image sensor and fabricating method thereof |
| CN101447447A (en) * | 2007-11-27 | 2009-06-03 | 上海华虹Nec电子有限公司 | Method of intrinsic gettering for trench isolation |
| CN102034843A (en) * | 2009-10-02 | 2011-04-27 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor device |
| CN105895649A (en) * | 2016-04-11 | 2016-08-24 | 上海华力微电子有限公司 | Method of reducing CIS (CMOS Image Sensor) device noise through changing SAB (Salicide Block) membrane |
-
2017
- 2017-06-26 CN CN201710496360.9A patent/CN107123659A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211835A (en) * | 2006-12-29 | 2008-07-02 | 东部高科股份有限公司 | CMOS image sensor and fabricating method thereof |
| CN101447447A (en) * | 2007-11-27 | 2009-06-03 | 上海华虹Nec电子有限公司 | Method of intrinsic gettering for trench isolation |
| CN102034843A (en) * | 2009-10-02 | 2011-04-27 | 台湾积体电路制造股份有限公司 | Method for manufacturing semiconductor device |
| CN105895649A (en) * | 2016-04-11 | 2016-08-24 | 上海华力微电子有限公司 | Method of reducing CIS (CMOS Image Sensor) device noise through changing SAB (Salicide Block) membrane |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133944A (en) * | 2017-12-20 | 2018-06-08 | 上海华力微电子有限公司 | It is a kind of to improve the method for CIS white pixel points by increasing heat treatment process |
| CN108133944B (en) * | 2017-12-20 | 2021-05-21 | 上海华力微电子有限公司 | Method for improving CIS white pixel points by adding heat treatment process |
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