CN105870163A - 加阶梯型隔离层和子阱层的共振隧穿二极管 - Google Patents
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Abstract
本发明公开了加阶梯型隔离层和子量子阱层的共振隧穿二极管（Resonant Tunneling Diode,RTD）的材料结构，这种结构的RTD可产生毫安‑安培级输出电流；将其应用于太赫兹波振荡源设计，可产生mW级输出功率的太赫兹波信号。本发明中的RTD结构见附图，自上而下描述为：重掺杂的AlxGa1‑xN发射区、Al组分阶梯型减少的AlmGa1‑mN层、InyGa1‑yN子量子阱层、AlzGa1‑zN势垒、GaN势阱、AlzGa1‑zN势垒、GaN隔离区、重掺杂的GaN集电区。关键结构是AlmGa1‑mN阶梯层及InyGa1‑yN子量子阱层作为隔离区。理论分析和仿真在室温下（300K）进行，仿真参数是x=0.4，m由0.4按5个阶梯减少，y=0.02，z=0.2，仿真结果是峰值电流Ip=2.48A（82.7 mA/um2），谷值电流Iv=0.734A（24.5mA/um2），PVCR=3.38，这是目前RTD研究报道中最大的输出电流。
Description
技术领域
太赫兹波的应用前景非常广阔，可用于安全监测、无损探测、新型雷达系、超高速无线通信技术等等，因此受到科研和应用领域的高度的重视，但是目前却没有一种稳定的可靠的太赫兹波振荡源。所以为了实现这些应用，设计一种稳定可靠的太赫兹波振荡源是非常关键的。共振隧穿二极管（Resonant Tunneling Diode,
RTD）作为太赫兹波信号发射源电学器件之一，一直以来都是研究焦点。
背景技术
共振隧穿二极管是最有可能作为太赫兹波振荡源的电子电路解决方案，因为GaN材料相对于传统共振隧穿二极管材料具有高载流子迁移率、良好的温度稳定性和宽禁带宽度等特性，于是GaN基的共振隧穿二极管有很大研究和应用潜力。GaN基RTD由于GaN材料良好的物理特性，受到越来越多的关注，是太赫兹波源领域当前研究的热点，并有望设计出室温下高功率的太赫兹波振荡源。目前所研究的GaN基RTD结构的理论分析和实际器件测试表明其性能不够好且稳定性差，在多次扫描之后负阻特性会出现明显退化。
普通GaN基双势垒单势阱RTD的结构从上到下通常为：重掺杂的发射区、发射极隔离区、双势垒单势阱的量子阱区、集电极隔离区、重掺杂的集电区。
发明内容
本发明针对普通RTD结构提出使用Al组分阶梯型减少的AlmGa1-mN层和InyGa1-yN子量子阱层作为发射区到双势垒单势阱之间的发射极隔离区。
本发明所设计的RTD结构自上而下描述为：重掺杂的AlxGa1-xN发射区、Al组分从m=x按五个阶梯减少到0的AlmGa1-mN层和InyGa1-yN子量子阱层构成的发射极隔离区、AlzGa1-zN势垒、GaN势阱、AlzGa1-zN势垒、GaN集电极隔离区、重掺杂的GaN集电区，结构图如图1，图中参数为仿真时采用的参数，即x=0.4，m从0.4按5个阶梯减少，y=0.02，z=0.2。这样设计的隔离区结构都可以提高RTD的输出特性——阶梯型AlmGa1-mN隔离层通过产生的二维电子气提高载流子迁移率，增加了发射区载流子注入效率；InyGa1-yN子量子阱层改变了能带结构，使得隧穿机制由3D-2D模式转换成2D-2D模式，因此增加了隧穿电子的数量、加快了隧穿速率以及降低峰值、谷值电压。理论分析和仿真表明，该新型结构的GaN基RTD获得了良好的微分负阻特性，而且输出电流达到了毫安-安培级、输出功率达到了毫瓦级。
针对所发明的GaN基RTD结构进行了仿真，仿真过程中对所设计器件采用的截面积是6×5um2，为了和实际寄生串联电阻一致，电极端接触电阻率设为4.36×10-3Ωcm2。仿真中的结构参数是：GaN基RTD结构的主量子阱区由Al0.2Ga0.8N/GaN/Al0.2Ga0.8N双势垒单势阱结构组成，采用低铝组分的Al0.2Ga0.8N生长晶格匹配于GaN势阱，从而提高异质结质量，减少异质结界面缺陷陷阱数量及降低极化电场，以抑制负微分电阻特性的退化现象；将该量子阱结构夹在100nm的n型Al0.4Ga0.6N发射区和100nm的n型GaN集电区之间，集电区和发射区采用掺杂浓度为1×1019cm-3的重掺杂，其他区域都不掺杂，发射区和集电区与各自电极均是欧姆接触；在发射区和主量子阱之间设计了一层5nm的Al组分m参数阶梯型减少的AlmGa1-mN层及2nm的In0.02Ga0.98N子量子阱层构成的隔离区；在主量子阱和集电区之间有一层5nm的GaN隔离区。图2呈现了该RTD的静态导带剖面图。仿真设定在室温下进行， I-V特性仿真结果如图3所示，峰值电流Ip=2.48A（82.7 mA/um2），谷值电流Iv=0.734A（24.5mA/um2），PVCR=3.38，这是目前该器件研究工作报道中所得的最大输出电流。
附图说明
图1是加阶梯型隔离层和子阱层的共振隧穿二极管结构示意图。
图2是加阶梯型隔离层和子阱层的共振隧穿二极管的静态导带剖面图。
图3是加阶梯型隔离层和子阱层的共振隧穿二极管的I-V特性图。
Claims (6)
1.加阶梯型隔离层和子量子阱层的共振隧穿二极管（Resonant
Tunneling Diode, RTD）的主要结构由发射极到集电极依次包括了：AlxGa1-xN发射区、由Al组分阶梯型减少的AlmGa1-mN层及InyGa1-yN子量子阱层构成的发射极隔离区、双势垒单势阱结构、集电极隔离区和集电区。
2.根据权利要求书1，RTD器件结构组成是：双势垒单势阱结构夹在由Al组分阶梯型减少的AlmGa1-mN层及InyGa1-yN子量子阱构成的发射极的隔离区和GaN集电极隔离区之间，所得结构又夹在发射区和集电区之间，从而形成器件整体结构。
3.根据权利要求书2，建立新型GaN基共振隧穿二极管理论分析模型结构，该结构自上而下描述为：器件的发射极电极、重掺杂的AlxGa1-xN发射区、Al的组分m参数阶梯型减少的AlmGa1-mN层、InyGa1-yN子量子阱、AlzGa1-zN势垒、GaN势阱、AlzGa1-zN势垒、GaN隔离区、重掺杂GaN集电区、器件的集电极电极。
4.根据权利要求书2的GaN基共振隧穿二极管有源区结构和权利要求书3的理论分析模型，其关键特征在于：在AlxGa1-xN发射区和主量子阱之间有一层由Al组分m参数阶梯型减少的AlmGa1-mN层及InyGa1-yN子量子阱结构作为发射极隔离区，在AlmGa1-mN隔离层中Al组分从靠近发射区一端的m=x开始，按1nm一个阶梯，平均地阶梯型减少到子量子阱左侧的0，依据目前加工工艺技术，理论分析模型中分为了5层阶梯；AlmGa1-mN隔离层紧连InyGa1-yN构成的子量子阱层。
5.根据权利要求书4的由Al组分阶梯型减少的AlmGa1-mN层及InyGa1-yN子量子阱构成的发射极的隔离区，其特征是：这样的新型隔离区结构——在阶梯型AlmGa1-mN层，通过产生二维电子气提高载流子迁移率，增加了发射区载流子注入效率；子量子阱层改变了能带结构，使得隧穿机制由3D-2D模式转换成2D-2D模式，以此增加隧穿电子的数量、加快隧穿速率及降低峰值、谷值电压，仿真结果表明这样新型结构的共振隧穿二极管获得了目前该器件研究报道中最大的电流。
6.根据权利要求书5的理论分析和仿真结果，其特征在于将该器件应用于太赫兹振荡信号源设计中，可产生毫瓦量级输出功率的太赫兹信号。
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| CN108183136A (zh) * | 2017-12-29 | 2018-06-19 | 杭州电子科技大学 | 一种新型电压域振荡二极管 |
| CN108183136B (zh) * | 2017-12-29 | 2021-01-26 | 杭州电子科技大学 | 一种新型电压域振荡二极管 |
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Application publication date: 20160817 |