CN105870163A - Resonant tunneling diode (RTD) additionally provided with step-like isolating layer and sub well layer - Google Patents
Resonant tunneling diode (RTD) additionally provided with step-like isolating layer and sub well layer Download PDFInfo
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- CN105870163A CN105870163A CN201610131135.0A CN201610131135A CN105870163A CN 105870163 A CN105870163 A CN 105870163A CN 201610131135 A CN201610131135 A CN 201610131135A CN 105870163 A CN105870163 A CN 105870163A
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- 230000005641 tunneling Effects 0.000 title claims abstract description 8
- 238000011160 research Methods 0.000 claims abstract description 7
- 238000004088 simulation Methods 0.000 claims abstract description 7
- 238000013461 design Methods 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 16
- 238000005036 potential barrier Methods 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 8
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000010356 wave oscillation Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
The invention discloses a resonant tunneling diode (RTD) material structure additionally provided with a step-like isolating layer and a sub well layer. The RTD with the structure can generate milliampere-ampere level output current; when the structure is applied to terahertz wave resonance source design, a terahertz wave signal with the mW-level output power can be generated. The RTD structure provided by the invention is as shown in the attached figure, including a heavily-doped Al<x>Ga<1-x>N emitter region, an Al<m>Ga<1-m>N layer with step-like decreasing Al components, an In<y>Ga<1-y>N sub quantum well layer, an Al<z>Ga<1-z>N barrier, a GaN potential well, an Al<z>Ga<1-z>N barrier, a GaN isolating region, and a heavily-doped GaN collector region from the upper to lower, wherein the key structure is that the Al<m>Ga<1-m>N step-like layer and the In<y>Ga<1-y>N sub quantum well layer are used as the isolating region; theoretical analysis and simulation are carried out at a room temperature (300K); the simulation parameters are that x is equal to 0.4; m is decreased from 0.4 based on five steps; y is equal to 0.02; z is equal to 0.2; the simulation result proves that the peak current Ip is equal to 2.48A(82.7mA/um<2>); the valley point current Iv is equal to 0.734A(24.5mA/um<2>); and PVCR is equal to 3.38. The output current is the highest according to RTD research reports so far.
Description
Technical field
The application prospect of THz wave is boundless, can be used for safety monitoring, lossless detection, New Type Radar system, ultrahigh speed wireless communication technology etc., therefore suffer from the attention of the height of scientific research and application, but but there is no a kind of stable reliable THz wave oscillation source at present.So in order to realize these application, designing a kind of reliable and stable THz wave oscillation source is non-the normally off key.Resonance tunnel-through diode (Resonant Tunneling Diode,
RTD) as one of terahertz wave signal emission source electricity device, it is the most all research focus.
Background technology
Resonance tunnel-through diode is the most possible electronic circuit solution as THz wave oscillation source, because GaN material has the characteristics such as high carrier mobility, good temperature stability and broad stopband width relative to tradition resonance tunnel-through diode material, then the resonance tunnel-through diode of GaN base has the biggest research and application potential.GaN base RTD, due to the good physical characteristic of GaN material, receives more and more attention, is the focus of THz wave source domain current research, and be expected to design high-power THz wave oscillation source under room temperature.The theory analysis of the GaN base RTD structure studied at present and practical devices test show that its performance is the best and poor stability, and after Multiple-Scan, negative resistance charactertistic there will be significant degradation.
The structure of common GaN base double potential barrier unipotential trap RTD is usually from top to bottom: heavily doped launch site, emitter stage isolation area, the quantum well region of double potential barrier unipotential trap, colelctor electrode isolation area, heavily doped collecting zone.
Summary of the invention
The present invention is directed to the Al that common RTD structure proposes to use Al component notch cuttype to reducemGa1-mN shell and InyGa1-yThe sub-quantum well layer of N is as the emitter stage isolation area between launch site to double potential barrier unipotential trap.
RTD structure designed by the present invention is described as from top to bottom: heavily doped AlxGa1-xN launch site, Al component are reduced to the Al of 0 from m=x by five laddersmGa1-mN shell and InyGa1-yThe emitter stage isolation area of N quantum well layer composition, AlzGa1-zN potential barrier, GaN potential well, AlzGa1-zN potential barrier, GaN colelctor electrode isolation area, heavily doped GaN collecting zone, structure chart such as Fig. 1, the parameter used when map parameter is emulation, i.e. x=0.4, m press 5 ladders minimizings, y=0.02, z=0.2 from 0.4.So isolation region structure of design can improve the output characteristics notch cuttype Al of RTDmGa1-mN sealing coat improves carrier mobility by the two-dimensional electron gas produced, and adds launch site Carrier Injection Efficiency；InyGa1-yThe sub-quantum well layer of N changes band structure so that tunneling mechanism is become 2D-2D pattern by 3D-2D patten transformation, therefore adds the quantity of tunelling electrons, accelerates tunneling rates and reduce peak value, valley point voltage.Theory analysis and emulation show, GaN base RTD of this new structure obtains good differential negative resistance characteristic, and export that electric current has reached milliampere-ampere level, output has reached milliwatt level.
Being emulated for the GaN base RTD structure invented, the sectional area in simulation process used designed device is 6 × 5um2, in order to consistent with actual parasitic series resistance, electrode tip contact resistivity is set to 4.36 × 10-3Ωcm2.Structural parameters in emulation are: the main quantum well region of GaN base RTD structure is by Al0.2Ga0.8N/GaN/Al0.2Ga0.8N double potential barrier unipotential well structure forms, and uses the Al of low al composition0.2Ga0.8N growth Lattice Matching is in GaN potential well, thus improves hetero-junctions quality, reduces heterojunction boundary defect trap quantity and reduces polarized electric field, to suppress the degradation phenomena of negative differential resistance characteristic；This quantum well structure is clipped in the N-shaped Al of 100nm0.4Ga0.6Between the N-shaped GaN collecting zone of N launch site and 100nm, collecting zone and launch site use doping content to be 1 × 1019cm-3Heavy doping, other regions all undope, and launch site and collecting zone and each self-electrode are all Ohmic contact；The Al that the Al component m parameter notch cuttype of one layer of 5nm reduces is devised between launch site and main SQWmGa1-mN shell and the In of 2nm0.02Ga0.98The isolation area that the sub-quantum well layer of N is constituted；The GaN isolation area of one layer of 5nm is had between main SQW and collecting zone.Fig. 2 presents the static conduction band profile of this RTD.Emulation sets and at room temperature carries out, and I-V characteristic simulation result is as it is shown on figure 3, peak point current Ip=2.48A(82.7 mA/um2), valley point current Iv=0.734A(24.5mA/um2), PVCR=3.38, this is the maximum output current of gained in current this device research work report.
Accompanying drawing explanation
Fig. 1 is the resonance tunnel-through diode structural representation adding notch cuttype sealing coat and sub-well layer.
Fig. 2 is the static conduction band profile of the resonance tunnel-through diode adding notch cuttype sealing coat and sub-well layer.
Fig. 3 is the I-V characteristic figure of the resonance tunnel-through diode adding notch cuttype sealing coat and sub-well layer.
Claims (6)
1. add the resonance tunnel-through diode (Resonant of notch cuttype sealing coat and sub-quantum well layer
Tunneling Diode, RTD) primary structure included successively to colelctor electrode by emitter stage: AlxGa1-xN launch site, the Al reduced by Al component notch cuttypemGa1-mN shell and InyGa1-yEmitter stage isolation area, double potential barrier unipotential well structure, colelctor electrode isolation area and the collecting zone that the sub-quantum well layer of N is constituted.
2., according to claims 1, RTD device architecture composition is: double potential barrier unipotential well structure is clipped in the Al reduced by Al component notch cuttypemGa1-mN shell and InyGa1-yBetween isolation area and the GaN colelctor electrode isolation area of the emitter stage of the sub-quantum well constitution of N, resulting structures is clipped between launch site and collecting zone again, thus forms device overall structure.
3. according to claims 2, setting up novel GaN base resonance tunnel-through diode theoretical analysis model structure, this structure is described as from top to bottom: the emitter electrode of device, heavily doped AlxGa1-xThe Al that N launch site, the component m parameter notch cuttype of Al reducemGa1-mN shell, InyGa1-yThe sub-SQW of N, AlzGa1-zN potential barrier, GaN potential well, AlzGa1-zN potential barrier, GaN isolation area, heavy doping GaN collecting zone, the collector electrode of device.
4., according to GaN base resonance tunnel-through diode active area structure and the theoretical analysis model of claims 3 of claims 2, it is mainly characterized in that: at AlxGa1-xOne layer of Al reduced by Al component m parameter notch cuttype is had between N launch site and main SQWmGa1-mN shell and InyGa1-yThe sub-quantum well structure of N is as emitter stage isolation area, at AlmGa1-mIn N sealing coat, Al component is from the beginning of near the m=x of one end, launch site, and by mono-ladder of 1nm, notch cuttype is reduced to 0 on the left of sub-SQW fifty-fifty, according to current technology, has been divided into 5 layers of ladder in theoretical analysis model；AlmGa1-mN sealing coat is close to InyGa1-yThe sub-quantum well layer that N is constituted.
5. according to the Al reduced by Al component notch cuttype of claims 4mGa1-mN shell and InyGa1-yThe isolation area of the emitter stage of the sub-quantum well constitution of N, is characterized in that: such novel isolation region structure is at notch cuttype AlmGa1-mN shell, improves carrier mobility by producing two-dimensional electron gas, adds launch site Carrier Injection Efficiency；Sub-quantum well layer changes band structure, tunneling mechanism is made to be become 2D-2D pattern by 3D-2D patten transformation, increasing the quantity of tunelling electrons with this, accelerate tunneling rates and reduce peak value, valley point voltage, simulation result shows that the resonance tunnel-through diode of such new structure obtains electric current maximum in this device research report current.
6. according to theory analysis and the simulation result of claims 5, it is characterised in that this device is applied in the design of Terahertz source oscillation signal, the terahertz signal of milliwatt magnitude output can be produced.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610131135.0A CN105870163A (en) | 2016-03-09 | 2016-03-09 | Resonant tunneling diode (RTD) additionally provided with step-like isolating layer and sub well layer |
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| CN201610131135.0A CN105870163A (en) | 2016-03-09 | 2016-03-09 | Resonant tunneling diode (RTD) additionally provided with step-like isolating layer and sub well layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183136A (en) * | 2017-12-29 | 2018-06-19 | 杭州电子科技大学 | A kind of novel voltage domain oscillating diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013171966A (en) * | 2012-02-21 | 2013-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Resonance tunnel diode and terahertz oscillator |
| CN104465913A (en) * | 2014-11-26 | 2015-03-25 | 西安电子科技大学 | Resonance tunneling diode with double InGaN sub quantum wells and manufacturing method thereof |
| CN104733545A (en) * | 2015-02-17 | 2015-06-24 | 天津大学 | RTD with emitter region In content gradual change collector region and high-In transition layers |
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2016
- 2016-03-09 CN CN201610131135.0A patent/CN105870163A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013171966A (en) * | 2012-02-21 | 2013-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Resonance tunnel diode and terahertz oscillator |
| CN104465913A (en) * | 2014-11-26 | 2015-03-25 | 西安电子科技大学 | Resonance tunneling diode with double InGaN sub quantum wells and manufacturing method thereof |
| CN104733545A (en) * | 2015-02-17 | 2015-06-24 | 天津大学 | RTD with emitter region In content gradual change collector region and high-In transition layers |
Non-Patent Citations (1)
| Title |
|---|
| LIN"AN YANG,ETAL: "Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode", 《APPLIED PHYSICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183136A (en) * | 2017-12-29 | 2018-06-19 | 杭州电子科技大学 | A kind of novel voltage domain oscillating diode |
| CN108183136B (en) * | 2017-12-29 | 2021-01-26 | 杭州电子科技大学 | Novel voltage domain oscillation diode |
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Application publication date: 20160817 |