CN105870144A - 一种感光晶圆的goc封装结构及其方法 - Google Patents

一种感光晶圆的goc封装结构及其方法 Download PDF

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CN105870144A
CN105870144A CN201610396300.5A CN201610396300A CN105870144A CN 105870144 A CN105870144 A CN 105870144A CN 201610396300 A CN201610396300 A CN 201610396300A CN 105870144 A CN105870144 A CN 105870144A
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photosensitive wafer
goc
smalt
wiring board
photosensitive
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凌代年
张春苑
秦永荣
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Guangzhou Darling Industrial Inc
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Guangzhou Darling Industrial Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14632Wafer-level processed structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)

Abstract

本发明公开了一种感光晶圆的GOC封装结构及其方法,属于一种感光晶圆的封装技术领域。其特征在于,包括蓝玻璃线路板和感光晶圆;所述的蓝玻璃线路板上设有芯片焊接点和引线pin脚;所述的芯片焊接点用于与感光晶圆进行电气连接;所述的引线pin脚用于与柔性线路板连接;解决了感光晶圆COB封装成本高、封装尺寸高度大和容易沾染灰尘的问题,使电子产品具有更好的性能和经济效益。

Description

一种感光晶圆的 GOC 封装结构及其方法
技术领域
本发明属于一种感光晶圆的封装技术领域。
背景技术
目前,感光晶圆的封装主要是采用板上芯片(ChipOnBoard,COB)封装技术。感光晶圆COB封装技术工艺首先是在印制电路板(Printed circuit board,PCB电路板)表面用红胶覆盖晶圆安放点,然后将晶圆直接安放在PCB板上,热处理至晶圆牢固地固定在PCB板上为止,随后再用金线通过绑定的方式在晶圆和PCB板之间直接建立电气性能连接。经COB封装后产品加装滤光片、镜座、马达和镜头组件,组成摄像头模组。
在用COB封装感光晶圆的工程中,绑定所用材料为金线,封装后的尺寸大于0.39mm,芯片感光区朝外,导致产品成本较高,微型化受到限制并容易沾染灰尘。
发明内容
本发明的目的是提供一种感光晶圆的GOC(GlassOnChip,GOC)封装结构及其方法,降低产品成本,降低封装尺寸高度大,减少芯片感光区沾染灰尘。
为实现上述目的,本发明提供的一种感光晶圆的GOC封装结构,其特征在于,包括蓝玻璃线路板和感光晶圆。所述的蓝玻璃线路板上设有芯片焊接点和引线pin脚;所述的芯片焊接点用于与感光晶圆进行电气连接;所述的引线pin脚用于与柔性线路板连接。
所述的蓝玻璃线路板具有滤光片效果。
本发明的另一目的是提供一种感光晶圆的GOC封装方法,包括如下步骤:
步骤1:用超声波清洗蓝玻璃线路板;
步骤2:利用覆晶导通方式,将感光晶圆直接对准蓝玻璃线路板上的芯片焊接点,利用各向异性导电膜材料作为结合材料,使感光晶圆和蓝玻璃线路板垂直方向的电极导通。
所述的感光晶圆的感光区域朝内焊接。
本发明的有益效果是:本发明所述的一种感光晶圆的GOC封装结构及其方法解决了感光晶圆COB封装成本高、封装尺寸高度大和容易沾染灰尘的问题。GOC封装技术由于不再采取金线进行绑定,节省了成本;GOC封装基板采用蓝玻璃线路板,而且感光晶圆与蓝玻璃线路板结合不再使用红胶,整个封装尺寸的高度比COB封装的高度低0.11mm; COB封装技术的感光晶圆感光区域朝外,而GOC封装技术中感光晶圆感光区域朝内,减少感光区沾染灰尘,使电子产品具有更好的性能和经济效益。
附图说明
图1是本发明的蓝玻璃线路板示意图;
图2是本发明的GOC封装结构示意图;
图3是本发明的GOC封装结构仰视图。
图中:1.蓝玻璃线路板;2. 感光晶圆;3. 芯片焊接点;4. 引线pin脚。
具体实施方式
下面结合附图对本发明作进一步详细的说明。
如图1、2所示,一种感光晶圆的GOC封装结构,包括蓝玻璃线路板(1)和感光晶圆(2);所述的蓝玻璃线路板(1)上设有芯片焊接点(3)和引线pin脚(4);所述的芯片焊接点(3)用于与感光晶圆(2)进行电气连接;所述的引线pin脚(4)用于与柔性线路板连接。
所述的蓝玻璃线路板(1)具有滤光片效果。
一种感光晶圆的GOC封装方法,包括步骤如下:
步骤1:用超声波清洗蓝玻璃线路板(1);
步骤2:利用覆晶导通方式,将感光晶圆(2)直接对准蓝玻璃线路板(1)上的芯片焊接点(3),利用各向异性导电膜材料作为结合材料,使感光晶圆(2)和蓝玻璃线路板(1)垂直方向的电极导通。
所述的感光晶圆(2)的感光区域朝内焊接。
以上所述的仅是本发明的一些实施方式。对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出若干变形和改进,这些都属于发明的保护范围。

Claims (4)

1.一种感光晶圆的GOC封装结构,其特征在于:包括蓝玻璃线路板(1)和感光晶圆(2);所述的蓝玻璃线路板(1)上设有芯片焊接点(3)和引线pin脚(4);所述的芯片焊接点(3)用于与感光晶圆(2)进行电气连接;所述的引线pin脚(4)用于与柔性线路板连接。
2.如权利要求1所述的一种感光晶圆的GOC封装结构,其特征在于:蓝玻璃线路板(1)具有滤光片效果。
3.在一种感光晶圆的GOC封装方法,其特征在于:包括如下步骤:
步骤1:用超声波清洗蓝玻璃线路板(1);
步骤2:利用覆晶导通方式,将感光晶圆(2)直接对准蓝玻璃线路板(1)上的芯片焊接点(3),利用各向异性导电膜材料作为结合材料,使感光晶圆(2)和蓝玻璃线路板(1)垂直方向的电极导通。
4.如权利要求3所述的一种感光晶圆的GOC封装方法,其特征在于:所述的感光晶圆的感光区域朝内焊接。
CN201610396300.5A 2016-06-07 2016-06-07 一种感光晶圆的goc封装结构及其方法 Pending CN105870144A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2745221Y (zh) * 2004-10-11 2005-12-07 天瀚科技股份有限公司 覆晶构装装置
CN1761042A (zh) * 2004-10-11 2006-04-19 天瀚科技股份有限公司 覆晶构装制造方法及其装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2745221Y (zh) * 2004-10-11 2005-12-07 天瀚科技股份有限公司 覆晶构装装置
CN1761042A (zh) * 2004-10-11 2006-04-19 天瀚科技股份有限公司 覆晶构装制造方法及其装置

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Application publication date: 20160817