CN105870113A - 一种led光源结构及其制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 229910000679 solder Inorganic materials 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910000831 Steel Inorganic materials 0.000 claims description 12
- 239000010959 steel Substances 0.000 claims description 12
- 238000010023 transfer printing Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 229960001866 silicon dioxide Drugs 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 208000010727 head pressing Diseases 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 206010019332 Heat exhaustion Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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-
- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
本发明公开了一种LED光源结构，包括陶瓷基板，陶瓷基板上设有导通电路，陶瓷基板上还设有阻焊结构，阻焊结构环绕设置在导通电路外部，阻焊结构上设有挡圈，阻焊结构内的陶瓷基板上设有热沉，热沉上设有LED芯片，LED芯片通过金线与导通电路连接；所述挡圈与陶瓷基板围成的空间内覆盖有硅胶透镜；同时还公开了光源结构的制备方法。本发明结构简单，直接将到导通电路与陶瓷基板共烧一体，将LED芯片通过热沉固定的基板上，本发明方法避免单颗光源的贴片工序，降低成本，并且陶瓷及烧结电路可靠，提高LED的整体稳定性，同时不与其它材料发生反应，提高LED的寿命。
Description
技术领域
本发明属于LED光源技术领域，具体涉及一种LED光源结构。
背景技术
LED作为新照明技术，其节能效果好、长寿命、启动快、可控制发光频谱而取得优良光品质等特点取得公认的效果，随着LED光源的普及，LED使用中的各种问题均暴露出来，随着LED的功率的提高，及集成使用，热量散出、光效提高及时从芯片热沉处散出问题更为突出，与此同时，降低成本成为需解决的问题。影响LED功率的问题之一是LED发光时伴随80％功率的热能的散发，如散热不良直接影响LED的光衰的效果，温度每升高1度，光衰约1％，同时，过高的温度直接影响LED芯片的寿命，因此，提高散热性能、提高光效、降低成本是LED封装结构上需解决的问题。
现行大功率LED支架大部分为铜、铝复合基板，COB铝、铜复合基板支架，LED晶片直接安装在复合基板的固晶区上，打线区由铜箔蚀刻而成，并于其他电路相通。上述结构存在以下问题：采用铝、铜基复合基板，由金属基板及铜箔用有机粘结绝缘层复合而成，采用有机材料，存在热阻高的问题，热导为1～2.2w/mk；有机材料存在长时间使用老化的问题；膨胀系数与LED晶片(铜：17.7X10-6/K，铝：23X10-6/K，LED芯片5.2X10-6/K：)存在不匹配的问题；随着高功率LED的使用，其散热量亦增大，因散热不良，导致晶片温升，光衰加剧，亮度及寿命降低，因膨胀系数不匹配，导致焊接面产生裂纹或完全断裂，热阻进一步加大，热量无法有效散出。
除上述问题外，还存在封装工艺繁琐、挡光及可靠性问题：如在封装前将挡圈制造完成，一般采用耐高温胶粘合金属或非金属圈，存在可靠性差问题，会脱离基板面或漏胶；如直接采用基板在封装过程中涂覆胶圈，有涂覆及烘 干工艺，较为繁琐，二者均存在在光源使用过程因老化、热疲劳等导致脱落等问题，导致光源损坏；且挡圈存在高度，会将侧出光挡住或吸收，导致光效降低。因此急需一种光效高、寿命长、可靠性高的LED光源结构。
发明内容
本发明的目的在于提供一种LED光源结构，同时该光源结构的制备方法。
为实现上述目的，本发明采用如下技术方案：
一种LED光源结构，包括陶瓷基板，陶瓷基板上设有导通电路，所述导通电路可以通过厚膜印刷烧结、真空镀膜蚀刻等方法固定在陶瓷基板上，一体成型；陶瓷基板上还设有阻焊结构，阻焊结构环绕设置在导通电路外部，阻焊结构上设有挡圈，阻焊结构内的陶瓷基板上设有热沉，热沉上设有LED芯片，LED芯片通过金线与导通电路连接；所述挡圈与陶瓷基板围成的空间内覆盖有硅胶透镜。
优选的，为了达到更好的散热和绝缘效果，所述陶瓷基板为氧化铝陶瓷或氮化铝陶瓷；所述阻焊结构的材质为玻璃、陶瓷或绝缘的有机材料；所述挡圈材质为硅胶、玻璃或陶瓷。
为了达到更好的效果，所述热沉为金属热沉；所述LED芯片为多个。多个LED芯片可以通过陶瓷基板上的导通电路进行串联或并联，实现整个光源结构的高功率。
为提高光效率，降低电阻，减少发热，所述导通电路的材质为金属。
上述LED光源结构的制备方法，包括以下步骤：将陶瓷基板切割、清洗后，利用厚膜法或移印法在陶瓷基板上制作电路图形，接着在850-900℃下烧结15-30min得到与陶瓷基板一体的导通电路，再采用传统常用方式将其他部件组装即可；其中所述导通电路的厚度为5-50μm。
所述所述厚膜法是采用丝网印刷方式，将电路金属浆料通过带有线路图形的丝网的网孔转移到陶瓷基板表面，从而形成各种不同的电路图形。
所述移印法是采用制作所需电路图形的钢板，将电路金属浆料填充在钢板上的图形凹槽内，然后通过柔性转印头挤压钢板，使得凹槽内的浆料粘附在转印头上，然后将转印头在陶瓷基板上相应的位置进行挤压，使金属浆料粘附在陶瓷基板上并保持填充在钢板上的形状，从而形成各种不同的电路图形。
上述LED光源结构还可以采用以下方法进行制备，将陶瓷基板切割、清洗后，利用薄膜法在陶瓷基板上制作导通电路，再采用传统常用方法将其他部件组装即可；其中所述导通电路的厚度为3-200μm。
所述薄膜法采用真空镀膜方法，在陶瓷表面形成所需的金属层，通过电镀或者化学镀形成陶瓷金属化板材，通过蚀刻形成所需的电路，然后通过电镀或化学镀在线路上镀上相应的功能层从而形成陶瓷基板上的导通电路。
本发明结构简单，直接将到导通电路与陶瓷基板共烧一体，利用陶瓷的高导热性(96％氧化铝陶瓷热导为16～20W/mk)，可以将热量导出，降低LED芯片问题的概率，同时陶瓷绝缘性高，提高电路安全性及安装光源的安全性，提高了光源的寿命；陶瓷和导线具有高反光性，将光线反射至上方，同时挡圈可将芯片及光源内部侧出光导出，提高了光效；硅胶透镜一方面能够提高光效，另一方面可以固化、保护光源的内部结构，提高了光源的可靠性；本发明方法简单将LED芯片通过热沉固定的基板上，避免单颗光源的贴片工序，降低成本，并且陶瓷及烧结电路可靠，提高LED的整体稳定性，同时不与其它材料发生反应，提高LED的寿命。
附图说明
图1为本发明结构示意图。
具体实施方式
如图1所示的LED光源结构，包括陶瓷基板1，陶瓷基板1上设有导通电路2，陶瓷基板1上还设有阻焊结构3，阻焊结构3环绕设置在导通电路2 外部，阻焊结构3上设有挡圈4，阻焊结构3内的陶瓷基板1上设有热沉5，热沉5上设有LED芯片6，LED芯片6通过金线7与导通电路2连接；所述挡圈4与陶瓷基板1围成的空间内覆盖有硅胶透镜8。
所述陶瓷基板1为氧化铝陶瓷或氮化铝陶瓷；所述阻焊结构3的材质为玻璃、陶瓷或绝缘的有机材料；所述挡圈材质4为硅胶、玻璃或陶瓷；所述热沉5为金属热沉；所述LED芯片6为多个。
实施例1
LED光源结构的制备方法，包括以下步骤：将陶瓷基板用激光切割、喷砂清洗后，采用丝网印刷方式，将电路金属浆料通过带有线路图形的丝网的网孔转移到陶瓷基板表面，在陶瓷基板上制作电路图形，接着在870℃下烧结20min得到与陶瓷基板一体的导通电路，再采用传统常用方式将其他部件组装即可；其中所述导通电路的厚度为5-10μm；
实施例2
LED光源结构的制备方法，包括以下步骤：将陶瓷基板用激光切割、喷砂清洗后，采用制作所需电路图形的钢板，将电路金属浆料填充在钢板上的图形凹槽内，然后通过柔性转印头挤压钢板，使得凹槽内的浆料粘附在转印头上，然后将转印头在陶瓷基板上相应的位置进行挤压，使金属浆料粘附在陶瓷基板上并保持填充在钢板上的形状，在陶瓷基板上制作电路图形，接着在850-900℃下烧结15-30min得到与陶瓷基板一体的导通电路，再采用传统常用方式将其他部件组装即可；其中所述导通电路的厚度为5-20μm。
实施例3
LED光源结构的制备方法，包括以下步骤：将陶瓷基板用激光切割、喷砂清洗后，采用真空镀膜方法，在陶瓷表面形成所需的金属层，通过电镀或者化学镀形成陶瓷金属化板材，通过蚀刻形成所需的电路，然后通过电镀或化学镀在线路上镀上相应的功能层从而形成陶瓷基板上的导通电路，再采用 传统常用方法将其他部件组装即可；其中所述导通电路的厚度为3-200μm；根据成本和性能要求可以做到0.1～10μm。
Claims (7)
1.一种LED光源结构，其特征在于：包括陶瓷基板，陶瓷基板上设有导通电路，陶瓷基板上还设有阻焊结构，阻焊结构环绕设置在导通电路外部，阻焊结构上设有挡圈，阻焊结构内的陶瓷基板上设有热沉，热沉上设有LED芯片，LED芯片通过金线与导通电路连接；所述挡圈与陶瓷基板围成的空间内覆盖有硅胶透镜。
2.如权利要求1所述的一种LED光源结构，其特征在于，所述陶瓷基板为氧化铝陶瓷或氮化铝陶瓷；所述阻焊结构的材质为玻璃、陶瓷或绝缘的有机材料；所述挡圈材质为硅胶、玻璃或陶瓷。
3.如权利要求2所述的一种LED光源结构，其特征在于，所述热沉为金属热沉；所述LED芯片为多个；所述导通电路的材质为金属银。
4.权利要求1-3任一所述的LED光源结构的制备方法，其特征在于，包括以下步骤：将陶瓷基板切割、清洗后，利用厚膜法或移印法在陶瓷基板上制作电路图形，接着在850-900℃下烧结15-30min得到与陶瓷基板一体的导通电路，再将其他部件组装即可；其中所述导通电路的厚度为5-50μm。
5.如权利要求4所述的的LED光源结构的制备方法，其特征在于，所述厚膜法是采用丝网印刷方式，将电路金属浆料通过带有线路图形的丝网的网孔转移到陶瓷基板表面，从而形成各种不同的电路图形。
6.如权利要求4所述的的LED光源结构的制备方法，其特征在于，所述移印法是采用制作所需电路图形的钢板，将电路金属浆料填充在钢板上的图形凹槽内，然后通过柔性转印头挤压钢板，使得凹槽内的浆料粘附在转印头上，然后将转印头在陶瓷基板上相应的位置进行挤压，使金属浆料粘附在陶瓷基板上并保持填充在钢板上的形状，从而形成各种不同的电路图形。
7.权利要求1-3任一所述的LED光源结构的制备方法，其特征在于，包括以下步骤：将陶瓷基板切割、清洗后，利用薄膜法在陶瓷基板上制作导通电路，再将其他部件组装即可；其中所述导通电路的厚度为3-200μm。
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