CN105869971B - A kind of flat-head type sine waveguide slow-wave structure - Google Patents
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Abstract
Description
技术领域technical field
本发明属于真空电子技术领域，更为具体地讲，涉及一种平顶型正弦波导慢波结构，适用于毫米波、太赫兹波段真空电子器件。The invention belongs to the technical field of vacuum electronics, and more specifically relates to a flat-top sine waveguide slow-wave structure, which is suitable for vacuum electronic devices in the millimeter wave and terahertz bands.
背景技术Background technique
太赫兹波是频率介于微波和红外波段之间的电磁波，其在高速率空间通信、超高分辨率武器制导、医学成像、物质太赫兹光谱特征分析、安全检查、材料检测等等领域有着重要的研究价值和广泛的应用前景。真空电子器件是能够实现大功率太赫兹波辐射源的一种很有潜力的器件。行波管是在真空电子器件中应用比较广泛的一类毫米波、太赫兹辐射源，它具有大功率、高效率、高增益、宽频带和长寿命等特点。慢波结构作为行波管的核心部件，直接决定了行波管的器件性能。Terahertz waves are electromagnetic waves with frequencies between microwave and infrared bands, which play an important role in high-speed space communication, ultra-high resolution weapon guidance, medical imaging, material terahertz spectral feature analysis, security inspection, material detection, etc. research value and broad application prospects. Vacuum electronic devices are a promising device that can realize high-power terahertz wave radiation sources. Traveling wave tube is a kind of millimeter wave and terahertz radiation source widely used in vacuum electronic devices. It has the characteristics of high power, high efficiency, high gain, wide frequency band and long life. As the core component of the TWT, the slow-wave structure directly determines the device performance of the TWT.
目前，在太赫兹波段行波管中主要研究的慢波结构主要有折叠波导、矩形交错双栅、双排矩形栅齿等结构。由于在太赫兹波段的工作波长很短、慢波结构的结构尺寸较小，因此加工难度大、加工精度低，使得高频系统的反射大、损耗大。在“适用于0.22THz行波管的正弦波导”(《电子器件快报》2011年，32卷，8号，1152-1154页，作者：许雄，魏彦玉等)一文中研究了一种正弦波导慢波结构(如图1所示)及与之匹配的一种均匀渐变的信号输入、输出耦合器，基于这种简洁、均匀的渐变输入、输出耦合器，正弦波导高频系统具有很小的反射、很低的传输损耗。然而，这种结构在电磁波传输方向上的电场强度相对较弱，因而其耦合阻抗较小，从而导致正弦波导行波管的输出功率、互作用效率较小、增益较低和饱和互作用长度较长等缺陷。At present, the slow-wave structures mainly studied in TWTs in the terahertz band mainly include folded waveguides, rectangular staggered double grids, and double-row rectangular grid teeth. Since the working wavelength in the terahertz band is very short and the structure size of the slow-wave structure is small, the processing is difficult and the processing precision is low, which makes the reflection and loss of the high-frequency system large. In the article "Sinusoidal waveguide suitable for 0.22THz traveling wave tube" ("Electronic Device Letters" 2011, Vol. 32, No. 8, pp. 1152-1154, authors: Xu Xiong, Wei Yanyu, etc.), a sine waveguide slow Wave structure (as shown in Figure 1) and a uniform and gradual signal input and output coupler matching it. Based on this simple and uniform gradual input and output coupler, the sinusoidal waveguide high-frequency system has very small reflection , Very low transmission loss. However, the electric field strength of this structure in the direction of electromagnetic wave transmission is relatively weak, so its coupling impedance is small, resulting in a sinusoidal waveguide traveling wave tube with low output power, low interaction efficiency, low gain and long saturation interaction length. long-term defects.
发明内容Contents of the invention
本发明的目的在于克服现有技术中正弦波导耦合阻抗小，提出一种平顶型正弦波导慢波结构，以提高其耦合阻抗，改善色散特性，进而提高行波管的输出功率、增益和互作用效率。The purpose of the present invention is to overcome the low coupling impedance of the sine waveguide in the prior art, and propose a flat-top sine waveguide slow wave structure to improve the coupling impedance, improve the dispersion characteristics, and then improve the output power, gain and interaction of the traveling wave tube. Action efficiency.
为实现上述发明目的，本发明平顶型正弦波导慢波结构，包括：In order to achieve the purpose of the above invention, the flat top sine waveguide slow wave structure of the present invention includes:
一正弦波导，其宽边长度为a，窄边长度为b，纵向(传输方向)上下为以宽边为中心进行起伏的正弦线周期性带状起伏，正弦线周期性带状起伏的高度为h，正弦线周期性带状起伏的周期长度为p，正弦线周期性带状起伏的宽度为a；A sinusoidal waveguide, the length of its wide side is a, the length of its narrow side is b, the longitudinal direction (transmission direction) is a sinusoidal periodic band undulation with the broad side as the center, and the height of the sinusoidal periodic band undulation is h, the period length of the sinusoidal periodic banding is p, and the width of the sinusoidal periodic banding is a;
上下正弦线周期性带状起伏之间为带状电子注通道，该带状电子注通道的宽度为正弦波导的宽边长度a，高度为hb；Between the periodic strip undulations of the upper and lower sinusoidal lines is a strip-shaped electron injection channel, the width of the strip-shaped electron injection channel is the length a of the broadside of the sinusoidal waveguide, and the height is h b ;
其特征在于，所述上下正弦线周期性带状起伏在带状电子注通道方向上的被削顶，变成平顶型，使得尺寸参数满足：b<hb+2h。It is characterized in that the top and bottom sine line periodic band-shaped undulations are truncated in the direction of the band-shaped electron injection channel and become flat-topped, so that the size parameter satisfies: b<h b +2h.
本发明的目的是这样实现的。The purpose of the present invention is achieved like this.
本发明平顶型正弦波导慢波结构，在正弦波导慢波结构的基础上，适当地压缩窄边尺寸b，压缩的大小等于上下正弦线周期性带状起伏被削顶的高度，使得尺寸参数满足：b<hb+2h，其中hb为带状电子注通道的高度，h为正弦线周期性带状起伏的高度。经测试，本发明平顶型正弦波导慢波结构具有更高的耦合阻抗值，同时色散特性得到了改善，这样克服了传统的耦合阻抗提高，而色散特性降低的缺陷，意味着电子注与电磁波的互作用能力增加，进而提高行波管的输出功率、增益和互作用效率。The flat-top sine waveguide slow-wave structure of the present invention, on the basis of the sine waveguide slow-wave structure, properly compresses the size b of the narrow side, and the compressed size is equal to the height of the truncated top of the periodic band undulations of the upper and lower sine lines, so that the size parameter Satisfy: b<h b +2h, where h b is the height of the band-shaped electron beam channel, and h is the height of the sinusoidal periodic band-like undulation. After testing, the flat-top sine waveguide slow-wave structure of the present invention has a higher coupling impedance value, and at the same time, the dispersion characteristics are improved, which overcomes the traditional defect that the coupling impedance is increased and the dispersion characteristics are reduced, which means that electron injection and electromagnetic waves The interaction capability of the TWT is increased, thereby improving the output power, gain and interaction efficiency of the TWT.
附图说明Description of drawings
图1是现有技术的正弦波导慢波结构的结构示意图；Fig. 1 is the structural representation of the sinusoidal waveguide slow-wave structure of prior art;
图2是本发明平顶型正弦波导慢波结构的一种具体实施方式结构示意图；Fig. 2 is a kind of specific embodiment structure schematic diagram of flat-top type sinusoidal waveguide slow-wave structure of the present invention;
图3是正弦波导慢波结构与平顶型正弦波导慢波结构的色散特性比较图；Fig. 3 is a comparison diagram of the dispersion characteristics between the sinusoidal waveguide slow-wave structure and the flat-top type sinusoidal waveguide slow-wave structure;
图4是正弦波导慢波结构与平顶型正弦波导慢波结构的耦合阻抗比较图；Fig. 4 is a comparison diagram of coupling impedance between a sine waveguide slow wave structure and a flat-top sine waveguide slow wave structure;
图5是正弦波导慢波结构与平顶型正弦波导慢波结构的反射参数比较图；Fig. 5 is a comparison diagram of reflection parameters between a sinusoidal waveguide slow-wave structure and a flat-top type sinusoidal waveguide slow-wave structure;
图6是正弦波导慢波结构与平顶型正弦波导慢波结构的传输参数比较图。Fig. 6 is a comparison diagram of transmission parameters between the sinusoidal waveguide slow-wave structure and the flat-top type sinusoidal waveguide slow-wave structure.
具体实施方式detailed description
下面结合附图对本发明的具体实施方式进行描述，以便本领域的技术人员更好地理解本发明。需要特别提醒注意的是，在以下的描述中，当已知功能和设计的详细描述也许会淡化本发明的主要内容时，这些描述在这里将被忽略。Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings, so that those skilled in the art can better understand the present invention. It should be noted that in the following description, when detailed descriptions of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.
图1是现有技术的正弦波导慢波结构的结构示意图。Fig. 1 is a structural schematic diagram of a sinusoidal waveguide slow wave structure in the prior art.
在本实施例中，现有技术的正弦波导慢波结构如图1所示，a为波导宽边长度，b为波导窄边长度，h为正弦线周期性带状起伏的高度，p为正弦线的周期长度，正弦线周期性带状起伏的宽度为a。在本实施例中，在220GHz频段，结构尺寸为(单位：mm)：a＝0.77mm，b＝0.57mm，p＝0.46mm，h＝0.215mm，hb＝0.14mm，即b＝hb+2h。In this embodiment, the sine waveguide slow wave structure in the prior art is shown in Figure 1, a is the length of the broad side of the waveguide, b is the length of the narrow side of the waveguide, h is the height of the periodic band-shaped undulation of the sinusoidal line, and p is the sinusoidal The period length of the line, the width of the periodic band undulation of the sinusoidal line is a. In this embodiment, in the 220GHz frequency band, the structural dimensions are (unit: mm): a=0.77mm, b =0.57mm, p=0.46mm, h=0.215mm, hb=0.14mm, that is, b =hb +2h.
图2是本发明平顶型正弦波导慢波结构的一种具体实施方式结构示意图。Fig. 2 is a structural schematic diagram of a specific embodiment of the flat-top sine waveguide slow-wave structure of the present invention.
在本实施例中，如图2所示，本发明平顶型正弦波导慢波结构包括正弦波导1，其宽边长度为a，窄边长度为b，纵向(长度方向)上下为以宽边为中心进行起伏的正弦线周期性带状起伏2，正弦线周期性带状起伏2的高度为h，正弦线周期性带状起伏2的周期长度为p，正弦线周期性带状起伏2的宽度为a；In this embodiment, as shown in Figure 2, the flat-top sine waveguide slow wave structure of the present invention comprises a sine waveguide 1, the length of its broad side is a, the length of its narrow side is b, and the vertical direction (length direction) is up and down with the broad side The sinusoidal periodic banding 2 with undulations as the center, the height of the sinusoidal periodic banding 2 is h, the period length of the sinusoidal periodic banding 2 is p, and the sinusoidal periodic banding 2 is a width of a;
上下正弦线周期性带状起伏2之间为带状电子注通道，该带状电子注通道的宽度为正弦波导的宽边长度a，高度为hb；Between the periodic strip undulations 2 of the upper and lower sinusoidal lines is a strip-shaped electron beam channel, the width of the strip-shaped electron beam channel is the length a of the broadside of the sinusoidal waveguide, and the height is h b ;
本发明平顶型正弦波导慢波结构，图2所示，在现有正弦波导慢波结构的基础上，其他尺寸保持不变的情况下，适当的压缩窄边长度b，同时，对上下正弦线周期性带状起伏在带状电子注通道方向上进行削顶，使其变成平顶型，削顶部分的高度为hs，使得尺寸参数满足：b<hb+2h，即压缩的部分等于上下削顶之和2hs，2hs＝hb+2h-b。The flat-top sine waveguide slow wave structure of the present invention, as shown in Figure 2, on the basis of the existing sine waveguide slow wave structure, under the condition that other dimensions remain unchanged, the length b of the narrow side is properly compressed, and at the same time, the upper and lower sine waves The periodic band-like undulation of the line is truncated in the direction of the band-shaped electron injection channel to make it flat-topped. The height of the truncated part is h s , so that the size parameter satisfies: b<h b +2h, that is, the compressed The part is equal to the sum 2h s of the top and bottom cuts, 2h s =h b +2h-b.
在本实施例中，在220GHz频段，本发明平顶型正弦波导慢波结构的结构尺寸为(单位：mm)：a＝0.77mm，b＝0.50mm，p＝0.46mm，h＝0.215mm，hb＝0.14mm，hs＝0.035mm，即b<hb+2h，即窄边长度b压缩了0.07mm，压缩部分正是上下削顶之和2hs＝2×0.035mm＝0.07mm。In this embodiment, in the 220GHz frequency band, the structural dimensions of the flat top sine waveguide slow wave structure of the present invention are (unit: mm): a=0.77mm, b=0.50mm, p=0.46mm, h=0.215mm, h b =0.14mm, h s =0.035mm, that is, b<h b +2h, that is, the narrow side length b is compressed by 0.07mm, and the compressed part is exactly the sum of the top and bottom cuts 2h s =2×0.035mm=0.07mm.
在本实施例中，作为最佳方案，削顶部分的高度为hs＝hb/4。In this embodiment, as the best solution, the height of the top portion is h s =h b /4.
针对上述220GHz频段的现有正弦波导慢波结构以及本发明平顶型正弦波导慢波结构，利用三维电磁仿真软件HFSS进行计算，获得其色散特性、耦合阻抗进出比较。同时，利用三维电磁仿真软件CST对两种慢波结构各85个周期进行模拟，获得两种慢波结构的反射参数和传输参数。仿真结果如图3、图4、图5、图6所示，其中，曲线1、曲线3、曲线5、曲线7分别是本发明平顶型正弦波导慢波结构的色散特性曲线、耦合阻抗曲线、反射参数曲线、传输参数曲线；曲线2、曲线4、曲线6、曲线8分别是现有正弦波导慢波结构的色散特性曲线、耦合阻抗曲线、反射参数曲线、传输参数曲线。For the existing sinusoidal waveguide slow-wave structure in the 220GHz frequency band and the flat-top sinusoidal waveguide slow-wave structure of the present invention, the three-dimensional electromagnetic simulation software HFSS is used to calculate and obtain its dispersion characteristics and coupling impedance in-out comparison. At the same time, the three-dimensional electromagnetic simulation software CST is used to simulate 85 periods of each of the two slow-wave structures, and the reflection parameters and transmission parameters of the two slow-wave structures are obtained. The simulation results are shown in Figure 3, Figure 4, Figure 5, and Figure 6, wherein Curve 1, Curve 3, Curve 5, and Curve 7 are the dispersion characteristic curve and coupling impedance curve of the flat-top sine waveguide slow-wave structure of the present invention respectively , reflection parameter curve, and transmission parameter curve; Curve 2, Curve 4, Curve 6, and Curve 8 are the dispersion characteristic curve, coupling impedance curve, reflection parameter curve, and transmission parameter curve of the existing sinusoidal waveguide slow wave structure respectively.
图3是现有正弦波导慢波结构与本发明平顶型正弦波导慢波结构的色散特性比较图。Fig. 3 is a comparison diagram of dispersion characteristics between the existing sine waveguide slow-wave structure and the flat-top sine waveguide slow-wave structure of the present invention.
在本实施例中，从图3中的曲线1和曲线2相比较可知，本发明平顶型正弦波导慢波结构相比于现有正弦波导慢波结构，在相当宽的频带内(195～235GHz)，本发明平顶型正弦波导慢波结构的归一化相速基本相同，而在高于235GHz的高频段，本发明平顶型正弦波导慢波结构的归一化相速略高，色散特性得到了改善。In this embodiment, it can be seen from the comparison of curve 1 and curve 2 in Fig. 3 that the flat-top type sine waveguide slow-wave structure of the present invention is better than the existing sine waveguide slow-wave structure in a relatively wide frequency band (195～ 235GHz), the normalized phase velocity of the flat-top sine waveguide slow-wave structure of the present invention is basically the same, and in the high frequency band higher than 235GHz, the normalized phase velocity of the flat-top sine waveguide slow-wave structure of the present invention is slightly higher, Dispersion characteristics have been improved.
图4是现有正弦波导慢波结构与本发明平顶型正弦波导慢波结构的耦合阻抗比较图。Fig. 4 is a comparison diagram of the coupling impedance between the existing sine waveguide slow-wave structure and the flat-top sine waveguide slow-wave structure of the present invention.
在本实施例中，从图4中的曲线3和曲线4相比较可以明显的看出，相比于现有的正弦波导慢波结构，在相当宽的频带内(195～260GHz)，本发明所提供的平顶型正弦波导慢波结构具有更高的耦合阻抗值。说明本发明中平顶型正弦波导慢波结构的耦合阻抗值得到了有效地提高，同时，结合图3，我们可以看出，在耦合阻抗提高的同时，色散特性没有降低，反而有所改善，这意味着电子注与电磁波的互作用能力增加，进而提高行波管的输出功率、增益和互作用效率。In this embodiment, it can be clearly seen from the comparison of curve 3 and curve 4 in Fig. 4 that compared with the existing sinusoidal waveguide slow wave structure, in a rather wide frequency band (195-260GHz), the present invention The provided flat-top sinusoidal waveguide slow-wave structure has a higher coupling impedance value. It shows that the coupling impedance value of the flat-top sine waveguide slow-wave structure in the present invention has been effectively improved. At the same time, in conjunction with Fig. 3, we can see that while the coupling impedance is increased, the dispersion characteristics have not decreased, but have been improved. It means that the interaction ability between the electron beam and the electromagnetic wave is increased, thereby improving the output power, gain and interaction efficiency of the traveling wave tube.
图5是正弦波导慢波结构与平顶型正弦波导慢波结构的反射参数比较图。Fig. 5 is a comparison diagram of reflection parameters between the sinusoidal waveguide slow-wave structure and the flat-top type sinusoidal waveguide slow-wave structure.
在本实施例中，从图5中的曲线5和曲线6相比较可知，相比于现有正弦波导慢波结构，在195～225GHz频带内，本发明平顶型正弦波导慢波结构的反射系数基本相当。在高于225GHz的频带内，本发明平顶型正弦波导慢波结构具有略低的反射参数。In this embodiment, it can be seen from the comparison of curve 5 and curve 6 in Fig. 5 that, compared with the existing sine waveguide slow wave structure, in the 195-225 GHz frequency band, the reflection of the flat top sine waveguide slow wave structure of the present invention The coefficients are basically the same. In the frequency band higher than 225 GHz, the flat-top sinusoidal waveguide slow-wave structure of the present invention has slightly lower reflection parameters.
图6是正弦波导慢波结构与平顶型正弦波导慢波结构的传输参数比较图。Fig. 6 is a comparison diagram of transmission parameters between the sinusoidal waveguide slow-wave structure and the flat-top type sinusoidal waveguide slow-wave structure.
在本实施例中，从图6中的曲线7和曲线8相比较可知，相比于现有正弦波导慢波结构，在195～240GHz频带内，本发明平顶型正弦波导慢波结构的传输系数基本相当。在高于240GHz的频带内，本发明平顶型正弦波导慢波结构具有略高的传输参数，这意味着这种新型慢波结构具有与正弦波导慢波结构相当甚至更优良的传输特性。In this embodiment, it can be seen from the comparison of curve 7 and curve 8 in Fig. 6 that, compared with the existing sine waveguide slow wave structure, in the 195-240 GHz frequency band, the transmission of the flat-top sine waveguide slow wave structure of the present invention The coefficients are basically the same. In the frequency band higher than 240 GHz, the flat-top sine waveguide slow-wave structure of the present invention has slightly higher transmission parameters, which means that the new slow-wave structure has comparable or even better transmission characteristics to the sine waveguide slow-wave structure.
结合图5、图6，我们可以看出，本发明平顶型正弦波导慢波结构相对现有正弦波导慢波结构，反射参数、传输参数都没有太大影响，即性能没有降低，本发明平顶型正弦波导慢波结构具有良好的性能。Combining Fig. 5 and Fig. 6, we can see that the flat-top sine waveguide slow-wave structure of the present invention has little influence on the reflection parameters and transmission parameters compared with the existing sine waveguide slow-wave structure, that is, the performance is not reduced. The top-shaped sinusoidal waveguide slow-wave structure has good performance.
尽管上面对本发明说明性的具体实施方式进行了描述，以便于本技术领域的技术人员理解本发明，但应该清楚，本发明不限于具体实施方式的范围，对本技术领域的普通技术人员来讲，只要各种变化在所附的权利要求限定和确定的本发明的精神和范围内，这些变化是显而易见的，一切利用本发明构思的发明创造均在保护之列。Although the illustrative specific embodiments of the present invention have been described above, so that those skilled in the art can understand the present invention, it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, As long as various changes are within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.
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