CN203536356U - A T-shaped staggered double-gate slow wave device - Google Patents
A T-shaped staggered double-gate slow wave device Download PDFInfo
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- CN203536356U CN203536356U CN201320685832.2U CN201320685832U CN203536356U CN 203536356 U CN203536356 U CN 203536356U CN 201320685832 U CN201320685832 U CN 201320685832U CN 203536356 U CN203536356 U CN 203536356U
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Abstract
The utility model discloses a T-shaped staggered double-gate slow wave device, belongs to vacuum electronic technical field, and relates to a slow wave device of a travelling wave tube operating in millimeter wave and terahertz wave band. The T-shaped staggered double-gate slow wave device comprises a housing and gate bodies disposed on the top surface and the bottom surface of an inner chamber. The gate bodies disposed on the top surface and the bottom surface of the inner chamber are all in T shapes and each a rectangular bottom and flat-plate-shaped gate cap on the top of the rectangular bottom. Every two adjacent T-shaped gates are staggered by a half cycle along an axis direction. The T-shaped gate bodies on the top surface and the T-shaped gate bodies on the bottom surface are arranged in a staggered manner at equal intervals. A gate body on the top surface and a corresponding gate body on the bottom surface are staggered by the length of a half cycle. The T-shaped staggered double-gate slow wave device has advantages of high coupling impedance, an excellent dispersion characteristic, and relative device miniaturization, is especially suitable for terahertz tape-shaped electric beam devices, and has high output power and efficiency.
Description
Technical field
The utility model belongs to vacuum electronic technical field, relates to and is operated in the slow-wave device that millimeter involves terahertz wave band travelling wave tube.
Background technology
Terahertz Technology is one of the most potential technology now, and it is with a wide range of applications in communication, imaging field.But owing to lacking suitable Terahertz power source, the electromagnetic spectrum exploitation of terahertz wave band is still blank.Vacuum electron device has very large potentiality and is used for realizing high-power THz source.Travelling wave tube is an of paramount importance class microwave, millimeterware amplifiers in vacuum electronics field, there is high-power, high efficiency, high-gain, broadband and long-life feature, be widely used in the fields such as radar, guidance, satellite communication, microwave remote sensing, radiation measurement, its performance directly determines the level that dressing is standby.Slow-wave device produces the parts of power stage as electron beam in travelling wave tube and electromagnetic wave phase mutual effect, be one of core component of travelling wave tube.Conventional slow-wave device has helix, coupling cavity, winding waveguide and rectangle grid etc. at present.
Helix TWT is a most popular class travelling wave tube, but it is mainly used in the frequency range below 60GHz, when being operated in millimeter wave, submillimeter and involving Terahertz frequency range, will run into structure processing difficulties, the problem that power output reduces greatly.Current terahertz wave band more than 100GHz, winding waveguide and rectangle lattice wave are led the slow-wave device into main research, but the processing of the electron beam passage of winding waveguide slow-wave device exists very large difficulty at present, rectangle grid slow-wave device exists that operating voltage is high, coupling impedance is not high, thereby causes the problems such as power output is low, efficiency is low.At " a kind of broadband Terahertz amplifying device of life cycle structure " (< < applied physics wall bulletin > >, 2008, 92 volumes, 091501-1-091501-3 page, author: Young-Min Shin, Larry R.Barnett) in a literary composition, studied the staggered double grid slow-wave device of a kind of rectangle, its structure as shown in Figure 1, comprise: housing 1 and inner chamber 3 thereof, be located at respectively end face on inner chamber, the rectangle grid body 2 of bottom surface, upper end face in square wave conductor (housing 1) inner chamber body, bottom surface is equidistant, on, under the identical rectangle grid body of (setting) packet size that distributes alternately, wherein neighbouring two rectangle grid are along the axis direction half period that misplaces, be the length that between the upper adjacent two grid bodies of same end face (bottom surface), centre-to-centre spacing is one-period, on, between lower grid, it is electron beam passage.This type of double grid ribbon-like electron note slow-wave device is compared with circle note shape vacuum electron device, has the advantages such as plate, miniaturization, high operate frequency, high power.But the staggered double grid slow-wave device of this type of rectangle due to the electric field of longitudinal propagation direction (being parallel to ribbon-like electron note) a little less than, thereby the coupling impedance in device high frequency characteristics is lower, dispersion characteristics are poor, thereby cause noting ripple interaction efficiency, power output is low, the defects such as the power output of device integral body and gain inequality.
Summary of the invention
The utility model, on the basis of the staggered double grid slow-wave device of rectangle, has proposed the staggered double grid slow-wave device of a kind of novel T shape.To improve device coupling impedance, improve dispersion characteristics, and increase power output and the efficiency of device.
The technical scheme that the utility model adopts is:
A kind of T shape double grid slow-wave device that interlocks, as shown in Figure 2, on the basis of the structure of the staggered double grid slow-wave device of background technology rectangle, the rectangle grid body of background technology is all changed into T shape grid body, at former rectangle grid body top, set up a plate shaped grid cover, thereby become the staggered double grid slow-wave device of T shape, under the point effect effect by " grid cover " two side flanges in electric field, strengthen electric field Local Characteristic, improve the coupling impedance of electric field and the efficiency of device and power output, improve its dispersion characteristics.Thereby, the staggered double grid slow-wave device of the utility model T shape comprises housing and is divided into the grid body of end face and bottom surface on inner chamber, it is all that bottom is cuboid that key is to be divided into each grid body of end face and bottom surface on inner chamber, top is provided with the "T"-shaped grid body of a plate shaped grid cover, wherein adjacent two "T"-shaped grid are along the axis direction half period (length that between the upper adjacent two grid bodies of same end face (bottom surface), centre-to-centre spacing is one-period) that misplaces, equidistant being staggered between each "T"-shaped grid body of upper end face and each "T"-shaped grid body of bottom surface, half cycle length is staggered between the "T"-shaped grid of two rows, each "T"-shaped grid respectively with corresponding upper end face, bottom surface global formation.
In above-mentioned "T"-shaped grid body: the thickness of bottom cuboid is 1:1.10-1.35 with head slab shape grid cover at the ratio of the thickness along on slow-wave device axis direction; "T"-shaped grid height is 1:0.04-0.13 with the ratio of " grid cover " height.
The utility model is set up one " grid cover " on each cuboid, because the effect of " grid cover " both sides point effect has strengthened electric field Local Characteristic, has improved the coupling impedance of slow-wave device and the efficiency of device and power output, has improved dispersion characteristics; If operating frequency is in this frequency range of 138-155GHz, the excursion of the utility model operating voltage is only 1/6 of background technology operating voltage excursion, operating voltage has reduced about 200-300V, be conducive to the miniaturization of whole device, and coupling impedance has improved 0.5 Ω left and right in whole operating frequency range.Therefore, the utlity model has the advantages such as coupling impedance is high and dispersion characteristics are good, the relative miniaturization of whole device, be particularly suitable for Terahertz ribbon-like electron note device, and increased power output and efficiency.Accompanying drawing explanation
Fig. 1 is the staggered double grid slow-wave device model schematic diagram of background technology rectangle;
Fig. 2 is the staggered double grid slow-wave device model schematic diagram of the utility model T shape;
Fig. 3 is the dispersion curve comparison diagram of the utility model embodiment and background technology;
Fig. 4 is the coupling impedance comparison diagram of the utility model embodiment and background technology.
In figure: 1. housing, 2. grid body, 2-1.(top) grid cover, 2-2. cuboid, 3. inner chamber.
Embodiment
It is example that present embodiment be take the staggered double grid slow-wave device of T shape that operating frequency range is 138-155GHz.
Be set as follows concrete size: wide * high 1.21mm * 1.07mm of being of end face (cross section) of the staggered double grid slow-wave device of T shape, cycle is 0.75mm, electron beam channel height is 0.21mm, the height of T shape grid body is 0.43mm, the height of grid cover is 0.05mm, the thickness of cuboid is 0.17mm, and the thickness of grid cover is 0.20mm; The width of the staggered double grid slow-wave device grid cover of background technology rectangle is 0.17mm, and other parameter is consistent with the staggered double grid of T shape; Obtain two kinds of staggered double grid slow-wave devices, then utilize 3 D electromagnetic simulation software to carry out emulation to above-mentioned slow-wave device, obtain dispersion curve if Fig. 3, coupling impedance are as Fig. 4.As shown in Figure 3, in the operating frequency range of 138-155GHz, the background technology normalization phase velocity ratio of the light velocity (phase velocity with) for the corresponding operating voltage of 0.27813-0.27906(be 19.79-19.922kV), operating voltage excursion is 132V; Normalization phase velocity scope of the present utility model is 0.27696-0.27711 (corresponding operating voltage is 19.624-19.645kV), operating voltage has reduced 166-277V like this, thereby be conducive to miniaturization, operating voltage excursion is 21V, the excursion of background technology operating voltage is 6 times of the utility model operating voltage excursion, so dispersion characteristics of the present utility model are very good, this work to travelling wave tube is very favourable.As shown in Figure 4, can find out and the utlity model has the coupling impedance higher than background technology, in the whole operating frequency range of 138-155GHz, coupling impedance has improved about 0.5 Ω.In sum, the staggered double grid slow-wave device of T shape has better high frequency characteristics than the staggered double grid slow-wave device of rectangle, thereby the staggered double grid travelling wave tube of T shape has larger power output and efficiency, is the high-power THz source that a class is good.
Claims (2)
1. the staggered double grid slow-wave device of a T shape, comprise housing and be divided into the grid body of end face and bottom surface on inner chamber, it is characterized in that being divided into each grid body of end face and bottom surface on inner chamber is all that bottom is the "T"-shaped grid body that cuboid, top are provided with a plate shaped grid cover, wherein adjacent two "T"-shaped grid are along the axis direction half period that misplaces, equidistant being staggered between each "T"-shaped grid body of upper end face and each "T"-shaped grid body of bottom surface, half cycle length is staggered between the "T"-shaped grid of two rows; Each "T"-shaped grid respectively with corresponding upper end face, bottom surface global formation.
2. by the staggered double grid slow-wave device of T shape described in claim 1, it is characterized in that the thickness of described "T"-shaped grid body bottom cuboid is 1:1.10-1.35 with head slab shape grid cover at the ratio of the thickness along on slow-wave device axis direction; "T"-shaped grid height is 1:0.04-0.13 with the ratio of " grid cover " height.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320685832.2U CN203536356U (en) | 2013-10-31 | 2013-10-31 | A T-shaped staggered double-gate slow wave device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320685832.2U CN203536356U (en) | 2013-10-31 | 2013-10-31 | A T-shaped staggered double-gate slow wave device |
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| Publication Number | Publication Date |
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| CN203536356U true CN203536356U (en) | 2014-04-09 |
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| CN201320685832.2U Withdrawn - After Issue CN203536356U (en) | 2013-10-31 | 2013-10-31 | A T-shaped staggered double-gate slow wave device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606504A (en) * | 2013-10-31 | 2014-02-26 | 电子科技大学 | T-shape staggered double-grid slow-wave device |
| CN105869971A (en) * | 2016-05-23 | 2016-08-17 | 电子科技大学 | Flap-topped sine waveguide slow wave structure |
| CN111128644A (en) * | 2019-12-30 | 2020-05-08 | 电子科技大学 | High-frequency structure of all-metal double-row gradient gate |
| CN111933500A (en) * | 2020-07-07 | 2020-11-13 | 电子科技大学 | Stepped energy coupling structure suitable for staggered double gates |
-
2013
- 2013-10-31 CN CN201320685832.2U patent/CN203536356U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606504A (en) * | 2013-10-31 | 2014-02-26 | 电子科技大学 | T-shape staggered double-grid slow-wave device |
| CN103606504B (en) * | 2013-10-31 | 2015-12-30 | 电子科技大学 | A kind of T-shaped is interlocked double grid slow-wave device |
| CN105869971A (en) * | 2016-05-23 | 2016-08-17 | 电子科技大学 | Flap-topped sine waveguide slow wave structure |
| CN111128644A (en) * | 2019-12-30 | 2020-05-08 | 电子科技大学 | High-frequency structure of all-metal double-row gradient gate |
| CN111933500A (en) * | 2020-07-07 | 2020-11-13 | 电子科技大学 | Stepped energy coupling structure suitable for staggered double gates |
| CN111933500B (en) * | 2020-07-07 | 2022-03-15 | 电子科技大学 | Stepped energy coupling structure suitable for staggered double gates |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140409 Effective date of abandoning: 20151230 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20140409 Effective date of abandoning: 20151230 |
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| C25 | Abandonment of patent right or utility model to avoid double patenting |