CN103258703B - A kind of microstrip line slow-wave structure - Google Patents
A kind of microstrip line slow-wave structure Download PDFInfo
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- CN103258703B CN103258703B CN201310159562.6A CN201310159562A CN103258703B CN 103258703 B CN103258703 B CN 103258703B CN 201310159562 A CN201310159562 A CN 201310159562A CN 103258703 B CN103258703 B CN 103258703B
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Abstract
A kind of microstrip line slow-wave structure, belongs to microwave vacuum electronic technology field, relates to " O " type electron tube.Comprise the microstrip transmission line structure formed by metal micro-strip line (1), medium substrate (2) and metal base plate (3); Described metal micro-strip line (1) is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made up of with two sections of microstrip lines be connected with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.The microstrip line slow-wave structure that the present invention proposes has higher coupling impedance and lower operating voltage compared with conventional n-type microstrip line slow-wave structure under identity unit size, can meet the composite request of travelling wave tube in power output, operating voltage, weight etc. further.
Description
Technical field
The invention belongs to microwave vacuum electronic technology field, relate to " O " type electron tube.
Background technology
" O " type electron tube be vacuum electronics field in an of paramount importance class microwave, Millimeter-Wave Source, there is the features such as high-power, efficiency is high, gain is high, bandwidth and life-span are long, be widely used in millimeter wave with submillimeter wave radar, guidance, communicate, the field such as microwave remote sensing, radiation measurement, also it is by " heart " praised as weaponry for this, and its performance directly decides the standby level of integral installation.And its microstrip line slow-wave structure is mainly used in travelling wave tube.Compared with other all kinds of device, the advantage of travelling wave tube is broadband, perfect heat-dissipating, single tube high-gain, excellent non-linear behaviour, low noise, high power, just very high gross efficiency can be obtained with collector reduction technology, very high electronic efficiency can be reached in narrow-band, the unfailing performance in adverse circumstances is better than semiconductor device, structure is comparatively simple, cumulative volume is less (containing power supply) and moderate etc.Now prove, in a lot of key areas, travelling wave tube is millimeter wave, the microwave amplifier that a class is very crucial, do not replace.But along with the develop rapidly of aeronautical engineering and electronic technology level, in the urgent need to structure simple, broadband relative to processing technology, high-power, low cost, volume are little, the miniature TWT of lightweightization, require now that TWT slow wave size is more and more less, but present processing technology is difficult to meet the demands.Therefore, develop and just seem very necessary in the new type slow wave structure travelling-wave tube slow-wave structure that can be operated in high-frequency microwave wave band.
Metal micro-strip line slow wave structure is the novel travelling-wave tube slow-wave structure of a class, and it instead of traditional special electron beam channel with stripe electron beam, saves space.The micro-band slow wave line of existing N-type, as shown in Figure 1, 2, comprises the microstrip transmission line structure formed by metal micro-strip line 1, medium substrate 2 and metal base plate 3.Wherein, metal micro-strip line 1 is in medium substrate 2 front; Metal base plate 3 is close to medium substrate 2 back side; Metal micro-strip line 1 forms the N-type micro-strip meander-line with several cycles on medium substrate 2 surface.Processing aspect can adopt ripe micro fabrication (as the technology such as photoetching, chemical vapour deposition (CVD)), and therefore pipe has the advantages such as processing technology is simple, cost is low, volume is little, lightweight.According to existing data, such plane slow wave structure has bandwidth, the advantage of big current and low-work voltage, is a kind of potential miniature TWT.
But the coupling impedance of the travelling wave tube of the metal micro-strip line slow wave structure of N-type is less, and operating voltage is relatively large, wherein coupling impedance is the parameter characterizing electron beam and slow wave system effect power, and coupling impedance directly has influence on gain and the efficiency of travelling wave tube.The coupling impedance that N-type metal micro-strip line slow wave structure is relatively little and larger operating voltage, limit its application development.
Summary of the invention
In order to improve the coupling impedance of microstrip line slow-wave structure and reduce its operating voltage under identity unit size condition, the present invention proposes a kind of novel microstrip line slow-wave structure.This microstrip line slow-wave structure has higher coupling impedance and lower operating voltage under identity unit size condition, can meet the composite request of travelling wave tube in power output, operating voltage, weight etc. further.
The technical solution adopted in the present invention is:
A kind of micro-strip meander-line slow wave structure, as shown in Figure 3,4, comprises the microstrip transmission line structure formed by metal micro-strip line 1, medium substrate 2 and metal base plate 3; Described metal micro-strip line 1 is positioned at medium substrate 2 front, and described metal base plate 3 is close to medium substrate 2 back side.Described metal micro-strip line 1 is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made up of with two sections of microstrip lines be connected with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.
Define the dimensional parameters of above-mentioned microstrip line slow-wave structure: a is the length of oval opening ring transverse axis, b is the length of the oval opening ring longitudinal axis, c is the thickness of medium substrate 2, w1 is the A/F of oval opening ring, w is the width of metal micro-strip line 1, and p is the length in single cycle in periodicity metal micro-strip line 1.Above-mentioned microstrip line slow-wave structure has following several distressed structure: 1), the longitudinal axis b of the oval opening ring in adjacent two cycles is equal.2), the longitudinal axis b increasing or decreasing successively of the oval opening ring in adjacent two cycles.3) longitudinal axis b change at random that, micro-band in adjacent two cycles is oval.
Determining under the condition that the elliptical ring longitudinal axis b in adjacent two cycles is equal, set this slow wave structure to be of a size of: a=0.09mm, b=0.38mm, c=0.2mm, w1=0.01mm, w=0.015mm, p=0.15mm, medium substrate 2 DIELECTRIC CONSTANT ε=4.4, draw concrete novel microstrip line slow-wave structure, as shown in Figure 3.This novel microstrip line slow-wave structure specifically and the N-type micro-band slow wave structure high-frequency electromagnetic simulation software under the same terms and size are emulated, draws their dispersion characteristic curve and coupling impedance curve, as shown in Figure 5 and Figure 6.Simulation results show, novel microstrip line slow-wave structure provided by the present invention and existing N-type microstrip line slow-wave structure under identity unit size compared with, while there is the feature that this type of travelling wave tube volume is little, lightweight, operating current large, broadband, operating voltage are little, there is higher coupling impedance, improve gain and the efficiency of travelling wave tube.
Accompanying drawing explanation
Fig. 1 is traditional N-type microstrip line slow-wave structure schematic diagram.
Fig. 2 is in traditional N-type microstrip line slow-wave structure, the two-dimensional representation in unit cycle.
Fig. 3 is novel microstrip line slow-wave structure schematic diagram provided by the invention.
Fig. 4 is in novel microstrip line slow-wave structure provided by the invention, the two-dimensional representation in unit cycle.
Fig. 5 is traditional N-type microstrip line slow-wave structure and the dispersion characteristic curve comparison diagram for novel microstrip line slow-wave structure provided by the invention.
Fig. 6 is traditional N-type microstrip line slow-wave structure and the coupling impedance curve comparison diagram for novel band line slow wave structure provided by the invention.
Above in each figure, 1 is metal micro-strip line, and 2 is medium substrate, and 3 is metal base plates; In fig. 5 and fig.: curve 4 and curve 7 are respectively dispersion characteristic curve and the coupling impedance curve of traditional N-type microstrip line slow-wave structure, curve 5 and curve 6 are respectively dispersion characteristic curve and the coupling impedance curve of novel microstrip line slow-wave structure provided by the invention.
Embodiment
A kind of micro-strip meander-line slow wave structure, as shown in Figure 3,4, comprises the microstrip transmission line structure formed by metal micro-strip line 1, medium substrate 2 and metal base plate 3; Described metal micro-strip line 1 is positioned at medium substrate 2 front, and described metal base plate 3 is close to medium substrate 2 back side.Described metal micro-strip line 1 is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made up of with two sections of microstrip lines be connected with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.
Define the dimensional parameters of above-mentioned microstrip line slow-wave structure: a is the length of oval opening ring transverse axis, b is the length of the oval opening ring longitudinal axis, c is the thickness of medium substrate 2, w1 is the A/F of oval opening ring, w is the width of metal micro-strip line 1, and p is the length in single cycle in periodicity metal micro-strip line 1.Above-mentioned microstrip line slow-wave structure has following several distressed structure: 1), the longitudinal axis b of the oval opening ring in adjacent two cycles is equal.2), the longitudinal axis b increasing or decreasing successively of the oval opening ring in adjacent two cycles.3) longitudinal axis b change at random that, micro-band in adjacent two cycles is oval.
Determining under the condition that the elliptical ring longitudinal axis b in adjacent two cycles is equal, set this slow wave structure to be of a size of: a=0.09mm, b=0.38mm, c=0.2mm, w1=0.01mm, w=0.015mm, p=0.15mm, DIELECTRIC CONSTANT ε=4.4 of medium substrate 2, draw concrete novel microstrip line slow-wave structure, as shown in Figure 3.This novel microstrip line slow-wave structure specifically and the N-type micro-band slow wave structure high-frequency electromagnetic simulation software under the same terms and size are emulated, draw their dispersion characteristic curve and coupling impedance curve, as shown in Figure 5 and Figure 6, wherein curve 4 and curve 7 are respectively dispersion characteristic curve and the coupling impedance curve of traditional N-type microstrip line slow-wave structure, and curve 5 and curve 6 are respectively dispersion characteristic curve and the coupling impedance curve of novel microstrip line slow-wave structure provided by the invention.
Compare from the curve 4 of Fig. 5 and curve 7 and draw: compared to traditional N-type microstrip line slow-wave structure, novel microstrip line slow-wave structure bandwidth is narrow, and dispersion is stronger; The normalization phase velocity vp/c of novel microstrip line slow-wave structure is lower than traditional N-type microstrip line slow-wave structure, so operating voltage reduces.
Compare from the curve 5 of Fig. 6 and curve 6 and draw: the coupling impedance of novel microstrip line slow-wave structure is higher than traditional N-type microstrip line slow-wave structure, therefore illustrate that this novel microstrip line slow-wave structure can improve the coupling impedance of structure, add gain and the efficiency of travelling wave tube.
Claims (4)
1. a micro-strip meander-line slow wave structure, comprises the microstrip transmission line structure formed by metal micro-strip line (1), medium substrate (2) and metal base plate (3); Described metal micro-strip line (1) is positioned at medium substrate (2) front, and described metal base plate (3) is close to medium substrate (2) back side; Described metal micro-strip line (1) is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made up of with two sections of microstrip lines be connected with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.
2. micro-strip meander-line slow wave structure according to claim 1, is characterized in that, the longitudinal axis b of the oval opening ring in adjacent two cycles is equal.
3. micro-strip meander-line slow wave structure according to claim 1, is characterized in that, the longitudinal axis b increasing or decreasing successively of the oval opening ring in adjacent two cycles.
4. micro-strip meander-line slow wave structure according to claim 1, is characterized in that, the longitudinal axis b change at random of the oval opening ring in adjacent two cycles.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105428189B (en) * | 2016-01-04 | 2017-06-30 | 电子科技大学 | A kind of slow-wave structure of co-planar waveguide |
| CN105513928B (en) * | 2016-01-04 | 2017-12-19 | 电子科技大学 | A kind of slow-wave structure of the plane line of rabbet joint |
| CN107335147B (en) * | 2017-06-29 | 2019-08-13 | 电子科技大学 | A kind of surface wave energy coupling head suitable for microwave physical therapy |
| CN109904049B (en) * | 2019-03-22 | 2020-12-01 | 电子科技大学 | Symmetrical ridge loading conformal micro-strip zigzag line slow wave device |
| CN114420520B (en) * | 2022-01-18 | 2023-04-28 | 电子科技大学 | Microstrip line-based band electron beam focusing method, device and application |
Citations (7)
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| US2925567A (en) * | 1954-05-12 | 1960-02-16 | Siemens Ag | Retardation conductor for variable field electronic tubes or the like |
| US3716745A (en) * | 1971-07-22 | 1973-02-13 | Litton Systems Inc | Double octave broadband traveling wave tube |
| RU2136075C1 (en) * | 1997-02-26 | 1999-08-27 | Российский Федеральный Ядерный Центр - Всероссийский Научно-Исследовательский Институт Экспериментальной Физики | Delay system of "clipped ring-spiral jumper" type |
| CN101894724A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | V-shaped micro-strip meander-line slow wave structure |
| CN202167447U (en) * | 2011-08-11 | 2012-03-14 | 电子科技大学 | Bent and ridge rectangular groove waveguide slow wave line |
| CN202855700U (en) * | 2012-10-24 | 2013-04-03 | 电子科技大学 | Radial logarithmic spiral micro-strip slow wave line |
| CN203260549U (en) * | 2013-05-03 | 2013-10-30 | 电子科技大学 | Microstrip line slow-wave structure |
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2013
- 2013-05-03 CN CN201310159562.6A patent/CN103258703B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2925567A (en) * | 1954-05-12 | 1960-02-16 | Siemens Ag | Retardation conductor for variable field electronic tubes or the like |
| US3716745A (en) * | 1971-07-22 | 1973-02-13 | Litton Systems Inc | Double octave broadband traveling wave tube |
| RU2136075C1 (en) * | 1997-02-26 | 1999-08-27 | Российский Федеральный Ядерный Центр - Всероссийский Научно-Исследовательский Институт Экспериментальной Физики | Delay system of "clipped ring-spiral jumper" type |
| CN101894724A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | V-shaped micro-strip meander-line slow wave structure |
| CN202167447U (en) * | 2011-08-11 | 2012-03-14 | 电子科技大学 | Bent and ridge rectangular groove waveguide slow wave line |
| CN202855700U (en) * | 2012-10-24 | 2013-04-03 | 电子科技大学 | Radial logarithmic spiral micro-strip slow wave line |
| CN203260549U (en) * | 2013-05-03 | 2013-10-30 | 电子科技大学 | Microstrip line slow-wave structure |
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