CN103258703A - Microstrip line slow-wave structure - Google Patents
Microstrip line slow-wave structure Download PDFInfo
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- CN103258703A CN103258703A CN2013101595626A CN201310159562A CN103258703A CN 103258703 A CN103258703 A CN 103258703A CN 2013101595626 A CN2013101595626 A CN 2013101595626A CN 201310159562 A CN201310159562 A CN 201310159562A CN 103258703 A CN103258703 A CN 103258703A
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Abstract
The invention discloses a microstrip line slow-wave structure and belongs to the technical field of microwave vacuum electrons and relates to an O-shaped electron vacuum device. The microstrip line slow-wave structure comprises a microsrip transmission line structure which is formed by a metal microstrip line (1), a medium substrate (2) and a metal base plate (3), wherein the metal microstrip line (1) is of a periodic structure which is formed by a plurality of O-shaped metal microstrip line units, the O-shaped metal microstrip line units are in end-to-end connection, each O-shaped metal microstrip line unit is composed of an ellipse opening ring microstrip line and two microstrip lines, and the two microstrip lines are respectively connected with two ends of an opening of the ellipse opening ring microstrip line respectively. Compared with a traditional N-shaped microstrip line slow-wave structure, the microstrip line slow-wave structure has higher coupling impedance and lower working voltages under the size of the same devices, and comprehensive requirements for the aspects such as output power, the working voltages and weight of a traveling-wave tube can be further met.
Description
Technical field
The invention belongs to the microwave vacuum electronic technology field, relate to " O " type electron tube.
Background technology
" O " type electron tube is an of paramount importance class microwave in the field of vacuum electronics, Millimeter-Wave Source, have characteristics such as high-power, that efficient is high, gain is high, bandwidth and life-span are long, be widely used in millimeter wave with submillimeter wave radar, guidance, communicate by letter, field such as microwave remote sensing, radiation measurement, also it is praised " heart " for weaponry for this, and its performance is directly determining the level of whole equipment.And its microstrip line slow wave structure is mainly used in travelling wave tube.Compare with other all kinds of devices, the advantage of travelling wave tube is broadband, perfect heat-dissipating, single tube high-gain, good non-linear behaviour, low noise, high power, just can obtain very high gross efficiency with collector step-down technology, can reach very high electronic efficiency in the narrow-band, the unfailing performance in the adverse circumstances is better than semiconductor device, structure is comparatively simple, cumulative volume less (containing power supply) and moderate cost etc.Prove that now in a lot of key areas, travelling wave tube is millimeter wave, the microwave amplifier that a class is very crucial, do not replace.But the develop rapidly along with aeronautical engineering and electronic technology level, press for relative simple, the broadband with processing technology of structure, high-power, low-cost, volume is little, the miniature TWT of in light weightization, require the TWT slow wave size more and more littler now, but present processing technology has been difficult to meet the demands.Therefore, development just seems very necessary in the new type slow wave structure TWT slow wave structure that can be operated in the high-frequency microwave wave band.
The metal micro-strip line slow wave structure is the novel TWT slow wave structure of a class, and it annotates passage with the electronics that stripe electron beam has replaced traditional special use, has saved the space.The little band slow wave line of existing N-type as shown in Figure 1, 2, comprises the microstrip transmission line structure that is formed by metal micro-strip line 1, medium substrate 2 and metal base plate 3.Wherein, metal micro-strip line 1 is in medium substrate 2 fronts; Metal base plate 3 is close to medium substrate 2 back sides; Metal micro-strip line 1 forms the N-type micro-strip meander-line with several cycles on medium substrate 2 surfaces.The processing aspect can adopt ripe micro fabrication (as technology such as photoetching, chemical vapour deposition (CVD)s), so pipe has advantages such as processing technology is simple, cost is low, volume is little, in light weight.According to existing data, such plane slow wave structure has bandwidth, and the advantage of big electric current and low-work voltage is a kind of potential miniature TWT.
But the coupling impedance of the travelling wave tube of the metal micro-strip line slow wave structure of N-type is less, and operating voltage is relatively large, and wherein coupling impedance is the parameter that characterizes electronics notes and slow wave system effect power, and coupling impedance directly has influence on gain and the efficient of travelling wave tube.The coupling impedance that N-type metal micro-strip line slow wave structure is less relatively and bigger operating voltage have limited its application development.
Summary of the invention
Coupling impedance and its operating voltage of reduction in order to improve the microstrip line slow wave structure under the identity unit size condition the present invention proposes a kind of novel microstrip line slow wave structure.This microstrip line slow wave structure has higher coupling impedance and lower operating voltage under the identity unit size condition, can further satisfy travelling wave tube at the composite request of aspects such as power output, operating voltage, weight.
The technical solution adopted in the present invention is:
A kind of micro-strip meander-line slow wave structure shown in Fig. 3,4, comprises the microstrip transmission line structure that is formed by metal micro-strip line 1, medium substrate 2 and metal base plate 3; Described metal micro-strip line 1 is positioned at medium substrate 2 fronts, and described metal base plate 3 is close to medium substrate 2 back sides.Described metal micro-strip line 1 is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made of with two sections microstrip lines that link to each other with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.
Define the length that the dimensional parameters of above-mentioned microstrip line slow wave structure: a is oval opening ring transverse axis, b is the length of the oval opening ring longitudinal axis, c is the thickness of medium substrate 2, w1 is the A/F of oval opening ring, w is the width of metal micro-strip line 1, and p is the length in single cycle in the periodicity metal micro-strip line 1.1), the longitudinal axis b of the oval opening ring in adjacent two cycles equates above-mentioned microstrip line slow wave structure has following several distressed structure:.2), the longitudinal axis b of the oval opening ring in adjacent two cycles increasing or decreasing successively.3), the oval longitudinal axis b change at random of little band in adjacent two cycles.
Under the condition that the elliptical ring longitudinal axis b that determines adjacent two cycles equates, setting this slow wave structure is of a size of: a=0.09mm, b=0.38mm, c=0.2mm, w1=0.01mm, w=0.015mm, p=0.15mm, medium substrate 2 DIELECTRIC CONSTANT=4.4, draw concrete novel microstrip line slow wave structure, as shown in Figure 3.This concrete novel microstrip line slow wave structure is carried out emulation with the little band slow wave structure of N-type under the same terms and size with the high-frequency electromagnetic simulation software, draw their dispersion characteristic curve and coupling impedance curve, as shown in Figure 5 and Figure 6.Simulation result proves, novel microstrip line slow wave structure provided by the present invention is compared under the identity unit size with existing N-type microstrip line slow wave structure, have that this type of travelling wave tube volume is little, in light weight, in operating current is big, broadband, operating voltage the are little characteristics, have higher coupling impedance, improved gain and the efficient of travelling wave tube.
Description of drawings
Fig. 1 is traditional N-type microstrip line slow wave structure schematic diagram.
Fig. 2 is in the traditional N-type microstrip line slow wave structure, the two-dimensional representation in unit cycle.
Fig. 3 is novel microstrip line slow wave structure schematic diagram provided by the invention.
Fig. 4 is in the novel microstrip line slow wave structure provided by the invention, the two-dimensional representation in unit cycle.
Fig. 5 is traditional N-type microstrip line slow wave structure and is the dispersion characteristic curve comparison diagram of novel microstrip line slow wave structure provided by the invention.
Fig. 6 is traditional N-type microstrip line slow wave structure and is the coupling impedance curve comparison diagram of novel band line slow wave structure provided by the invention.
More than among each figure, the 1st, metal micro-strip line, the 2nd, medium substrate, the 3rd, metal base plate; In Fig. 5 and Fig. 6: curve 4 and curve 7 are respectively dispersion characteristic curve and the coupling impedance curve of traditional N-type microstrip line slow wave structure, and curve 5 and curve 6 are respectively dispersion characteristic curve and the coupling impedance curve of novel microstrip line slow wave structure provided by the invention.
Embodiment
A kind of micro-strip meander-line slow wave structure shown in Fig. 3,4, comprises the microstrip transmission line structure that is formed by metal micro-strip line 1, medium substrate 2 and metal base plate 3; Described metal micro-strip line 1 is positioned at medium substrate 2 fronts, and described metal base plate 3 is close to medium substrate 2 back sides.Described metal micro-strip line 1 is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made of with two sections microstrip lines that link to each other with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.
Define the length that the dimensional parameters of above-mentioned microstrip line slow wave structure: a is oval opening ring transverse axis, b is the length of the oval opening ring longitudinal axis, c is the thickness of medium substrate 2, w1 is the A/F of oval opening ring, w is the width of metal micro-strip line 1, and p is the length in single cycle in the periodicity metal micro-strip line 1.1), the longitudinal axis b of the oval opening ring in adjacent two cycles equates above-mentioned microstrip line slow wave structure has following several distressed structure:.2), the longitudinal axis b of the oval opening ring in adjacent two cycles increasing or decreasing successively.3), the oval longitudinal axis b change at random of little band in adjacent two cycles.
Under the condition that the elliptical ring longitudinal axis b that determines adjacent two cycles equates, setting this slow wave structure is of a size of: a=0.09mm, b=0.38mm, c=0.2mm, w1=0.01mm, w=0.015mm, p=0.15mm, the DIELECTRIC CONSTANT of medium substrate 2=4.4 draw concrete novel microstrip line slow wave structure, as shown in Figure 3.This concrete novel microstrip line slow wave structure is carried out emulation with the little band slow wave structure of N-type under the same terms and size with the high-frequency electromagnetic simulation software, draw their dispersion characteristic curve and coupling impedance curve, as shown in Figure 5 and Figure 6, wherein curve 4 and curve 7 are respectively dispersion characteristic curve and the coupling impedance curve of traditional N-type microstrip line slow wave structure, and curve 5 and curve 6 are respectively dispersion characteristic curve and the coupling impedance curve of novel microstrip line slow wave structure provided by the invention.
Relatively draw from curve 4 and the curve 7 of Fig. 5: than traditional N-type microstrip line slow wave structure, novel microstrip line slow wave structure bandwidth is narrow, and chromatic dispersion is stronger; The normalization phase velocity vp/c of novel microstrip line slow wave structure is lower than traditional N-type microstrip line slow wave structure, so operating voltage reduces.
Relatively draw from curve 5 and the curve 6 of Fig. 6: the coupling impedance of novel microstrip line slow wave structure is than traditional N-type microstrip line slow wave structure height, therefore illustrate that this novel microstrip line slow wave structure can improve the coupling impedance of structure, has increased gain and the efficient of travelling wave tube.
Claims (4)
1. a micro-strip meander-line slow wave structure comprises the microstrip transmission line structure that is formed by metal micro-strip line (1), medium substrate (2) and metal base plate (3); Described metal micro-strip line (1) is positioned at medium substrate (2) front, and described metal base plate (3) is close to medium substrate (2) back side; Described metal micro-strip line (1) is joined end to end by several " O " type metal micro-strip line unit and forms periodic structure, and wherein said " O " type metal micro-strip line unit is made of with two sections microstrip lines that link to each other with the opening two ends of oval opening ring microstrip line respectively an oval opening ring microstrip line.
2. micro-strip meander-line slow wave structure according to claim 1 is characterized in that, the longitudinal axis b of the oval opening ring in adjacent two cycles equates.
3. micro-strip meander-line slow wave structure according to claim 1 is characterized in that, the longitudinal axis b of the oval opening ring in adjacent two cycles is increasing or decreasing successively.
4. micro-strip meander-line slow wave structure according to claim 1 is characterized in that, the longitudinal axis b change at random of the oval opening ring in adjacent two cycles.
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| CN201310159562.6A CN103258703B (en) | 2013-05-03 | 2013-05-03 | A kind of microstrip line slow-wave structure |
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| CN103258703B CN103258703B (en) | 2015-10-21 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428189A (en) * | 2016-01-04 | 2016-03-23 | 电子科技大学 | Slow wave structure of coplanar waveguide |
| CN105513928A (en) * | 2016-01-04 | 2016-04-20 | 电子科技大学 | Planar slot line slow wave structure |
| CN107335147A (en) * | 2017-06-29 | 2017-11-10 | 电子科技大学 | A kind of surface wave energy coupling head suitable for microwave physical therapy |
| CN109904049A (en) * | 2019-03-22 | 2019-06-18 | 电子科技大学 | A kind of conformal micro-strip meander-line slow wave device of symmetrical ridges load |
| CN114420520A (en) * | 2022-01-18 | 2022-04-29 | 电子科技大学 | Microstrip line-based strip electron beam focusing method, device and application |
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| US2925567A (en) * | 1954-05-12 | 1960-02-16 | Siemens Ag | Retardation conductor for variable field electronic tubes or the like |
| US3716745A (en) * | 1971-07-22 | 1973-02-13 | Litton Systems Inc | Double octave broadband traveling wave tube |
| RU2136075C1 (en) * | 1997-02-26 | 1999-08-27 | Российский Федеральный Ядерный Центр - Всероссийский Научно-Исследовательский Институт Экспериментальной Физики | Delay system of "clipped ring-spiral jumper" type |
| CN101894724A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | V-shaped micro-strip meander-line slow wave structure |
| CN202167447U (en) * | 2011-08-11 | 2012-03-14 | 电子科技大学 | Bent and ridge rectangular groove waveguide slow wave line |
| CN202855700U (en) * | 2012-10-24 | 2013-04-03 | 电子科技大学 | Radial logarithmic spiral micro-strip slow wave line |
| CN203260549U (en) * | 2013-05-03 | 2013-10-30 | 电子科技大学 | Microstrip line slow-wave structure |
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2013
- 2013-05-03 CN CN201310159562.6A patent/CN103258703B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2925567A (en) * | 1954-05-12 | 1960-02-16 | Siemens Ag | Retardation conductor for variable field electronic tubes or the like |
| US3716745A (en) * | 1971-07-22 | 1973-02-13 | Litton Systems Inc | Double octave broadband traveling wave tube |
| RU2136075C1 (en) * | 1997-02-26 | 1999-08-27 | Российский Федеральный Ядерный Центр - Всероссийский Научно-Исследовательский Институт Экспериментальной Физики | Delay system of "clipped ring-spiral jumper" type |
| CN101894724A (en) * | 2010-07-15 | 2010-11-24 | 电子科技大学 | V-shaped micro-strip meander-line slow wave structure |
| CN202167447U (en) * | 2011-08-11 | 2012-03-14 | 电子科技大学 | Bent and ridge rectangular groove waveguide slow wave line |
| CN202855700U (en) * | 2012-10-24 | 2013-04-03 | 电子科技大学 | Radial logarithmic spiral micro-strip slow wave line |
| CN203260549U (en) * | 2013-05-03 | 2013-10-30 | 电子科技大学 | Microstrip line slow-wave structure |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428189A (en) * | 2016-01-04 | 2016-03-23 | 电子科技大学 | Slow wave structure of coplanar waveguide |
| CN105513928A (en) * | 2016-01-04 | 2016-04-20 | 电子科技大学 | Planar slot line slow wave structure |
| CN107335147A (en) * | 2017-06-29 | 2017-11-10 | 电子科技大学 | A kind of surface wave energy coupling head suitable for microwave physical therapy |
| CN107335147B (en) * | 2017-06-29 | 2019-08-13 | 电子科技大学 | A kind of surface wave energy coupling head suitable for microwave physical therapy |
| CN109904049A (en) * | 2019-03-22 | 2019-06-18 | 电子科技大学 | A kind of conformal micro-strip meander-line slow wave device of symmetrical ridges load |
| CN114420520A (en) * | 2022-01-18 | 2022-04-29 | 电子科技大学 | Microstrip line-based strip electron beam focusing method, device and application |
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| CN103258703B (en) | 2015-10-21 |
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Granted publication date: 20151021 Termination date: 20170503 |