CN107591304B - Cold cathode compact amplifier - Google Patents
Cold cathode compact amplifier Download PDFInfo
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- CN107591304B CN107591304B CN201710757318.8A CN201710757318A CN107591304B CN 107591304 B CN107591304 B CN 107591304B CN 201710757318 A CN201710757318 A CN 201710757318A CN 107591304 B CN107591304 B CN 107591304B
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Abstract
The invention relates to a cold cathode compact amplifier. The device comprises a high-frequency interaction system, an input structure, an output structure, a collector and a cold cathode electron gun; the high-frequency interaction system comprises a shell and a periodic slow wave structure; one end of the shell is hermetically connected with the cold cathode electron gun, and the other end of the shell is hermetically connected with the collector; the input structure is hermetically connected with the shell in a mode of penetrating through the shell, and the input structure is arranged at one end, close to the cold cathode electron gun, of the shell; the output structure is connected with the shell in a sealing mode in a mode of penetrating through the shell, and the output structure is arranged at one end, close to the collector, of the shell. The cold cathode electron gun is used as an electron source, a periodic slow wave structure is matched, the electron beam is subjected to density modulation by using a high-frequency field, the modulated electron beam enters a high-frequency interaction system to interact with a high-frequency electromagnetic field, energy exchange is carried out, and amplification output of signals is realized, so that the period number of the periodic structure is greatly reduced, and the volume and the device processing difficulty of an electric vacuum amplification device are reduced.
Description
Technical field
The invention belongs to microwave, millimeter wave, submillimeter wave, Terahertz frequency range electron tube technical field, be related to one
Kind amplifier, concretely relates to a kind of cold cathode compact amplifier.
Background technique
Microwave, millimeter wave, submillimeter wave, Terahertz electron tube are as military affairs such as radar, electronic countermeasure, space communications
The indispensable core devices of electronic system are constantly subjected to pay attention to extensively.
Traditional vacuum device generally uses hot cathode, the disadvantage is that volume is big, working efficiency is low, reaction speed is slow, easily
Damage.
Solid-state semiconductor radiation source device compared to hot cathode electrovacuum radiation source have it is small in size, can integrate, response speed
The advantages that fast, but it includes the disadvantages such as anti-interference, radiation hardness ability is weak, and power is low, especially under space environment, solid-state
Radiation source device reliability hardly results in guarantee.
Summary of the invention
For the deficiencies of the prior art, the present invention provides a kind of cold cathode compact amplifiers.
A kind of specific technical solution of cold cathode compact amplifier of the invention is as follows:
A kind of cold cathode compact amplifier comprising high frequency interacting system, input structure, export structure, collector
And cold-cathode gun;The high frequency interacting system includes shell and is set to the intracorporal periodic slow wave structure of the shell;Institute
The one end and the cold-cathode gun for stating shell are tightly connected, and so that the cold-cathode gun is directly integrated in the high frequency mutual
In action system, the other end of the shell and the collector are tightly connected;The input structure is to run through the shell side
Formula is connect with the housing seal, and the input structure is arranged on the housing close to the one of the cold-cathode gun
End;The export structure through the shell type with the housing seal to connect, and the export structure is arranged in institute
State one end on shell close to the collector.
By using microwave modulation cold-cathode gun as electron source, cooperate periodic slow wave structure, it is right using high frequency field
Electronics note carries out density modulation, and modulated electronics note enters high frequency interacting system and interaction, energy occur for electromagnetic field of high frequency
Amount exchange realizes the amplification output of signal, to greatly reduce the periodicity of periodic structure, reduces electrovacuum amplifier
The volume and device fabrication difficulty of part;It, can be with and by the way that cold-cathode gun to be directly integrated into high frequency interacting system
Greatly reduce the volume of amplifier.
According to a preferred embodiment, the periodic slow wave structure includes multiple diaphragms, more than multiple diaphragms
Alternate mode is set in the cavity that the shell is formed down, keeps the formation slow-wave transmission in the cavity that the shell is formed logical
Road;It is provided with drift tube on each diaphragm, and is spaced and is coaxially disposed between the adjacent drift tube, makes in institute
It states and forms electron beam channel in the cavity of shell formation.
According to a preferred embodiment, cold-cathode gun include electron gun pedestal, electronics gun housing body, cathode plate and
Cold cathode;Electronics gun housing body one end and the electron gun pedestal are tightly connected, the other end and the high frequency interacting system
In housing seal connection;Described cathode plate one end is connected with the electron gun pedestal, and the cold cathode is arranged in the other end;Institute
It states in the cavity that the shell that cold cathode is located in the high frequency interacting system is formed, and is directed at the electron beam channel.
According to a preferred embodiment, the input structure includes the first rectangular waveguide and input window;Described first
Rectangular waveguide one end is tightly connected with being inserted into the shell through the shell type with the shell contact position;Institute
The other end for stating input window and first rectangular waveguide is tightly connected;And it is provided in first rectangular waveguide and institute
State the input cavity of the cavity connection of shell formation.
According to a preferred embodiment, the export structure includes the second rectangular waveguide and output window;Described second
Rectangular waveguide one end is tightly connected with being inserted into the shell through the shell type with the shell contact position;Institute
The other end for stating output window and second rectangular waveguide is tightly connected;And it is provided in second rectangular waveguide and institute
State the output cavity of the cavity connection of shell formation.
According to a preferred embodiment, the collector includes that collector ontology, collector bottom plate and collector are exhausted
Edge shell;Collector insulation shell one end and the collector bottom plate are tightly connected, the collector insulation shell it is another
One end is connect with the housing seal in the high frequency interacting system;The collector ontology is located at the collector bottom plate, institute
It states in the space that the shell in collector insulation shell and the high frequency interacting system is formed, and logical to be directed at the electronics note
The mode in road is set on the collector bottom plate.
According to a preferred embodiment, the cold cathode is Spindt cold cathode, diamond cold cathode or carbon nanometer
Pipe cold cathode.
According to a preferred embodiment, the periodic slow wave structure is Huges coupled-cavity slow-wave structure, arranged in a straight line
Coupling aperture Coupled-Cavity Slow Wave, double coupling aperture Coupled-Cavity Slow Waves, linear trapezoidal Coupled-Cavity Slow Wave, the wrong ladder of single cross
Shape Coupled-Cavity Slow Wave, the wrong trapezoidal Coupled-Cavity Slow Wave of double cross or helical line slow-wave structure.
According to a preferred embodiment, the high frequency interacting system, the input structure, the export structure,
The collector is connected with the cold-cathode gun by welded seal.
Compared with prior art, cold cathode compact amplifier of the invention has the following beneficial effects:
Cold cathode compact amplifier of the present invention is by using microwave modulation cold-cathode gun as electron source, cooperation week
Phase slow-wave structure infuses electronics using high frequency field and carries out density modulation, modulated electronics note enter high frequency interacting system with
Interaction occurs for electromagnetic field of high frequency, and energy exchange realizes the amplification output of signal, to greatly reduce the week of periodic structure
Issue reduces the volume and device fabrication difficulty of electrovacuum amplifying device.
Detailed description of the invention
Fig. 1 is the sectional view of cold cathode compact amplifier of the present invention;
Fig. 2 is the sectional view of periodic slow wave structure in cold cathode compact amplifier of the present invention.
Reference signs list
100- high frequency interacting system
110- shell
120- periodic slow wave structure
111- diaphragm
112- drift tube
123- coupling slot
200- input structure
The first rectangular waveguide of 210-
220- input window
211- input cavity
300- export structure
The second rectangular waveguide of 310-
320- output window
311- output cavity
400- collector
410- collector ontology
420- collector bottom plate
430- collector insulation shell
500- cold-cathode gun
510- electron gun pedestal
520- electronics gun housing body
530- cathode plate
540- cold cathode
600- electron beam channel
700- slow-wave transmission channel
Specific embodiment
Cold cathode compact amplifier of the invention is described in detail with reference to the accompanying drawing.
As shown in Figure 1 and Figure 2, a kind of cold cathode compact amplifier comprising high frequency interacting system 100, input structure
200, export structure 300, collector 400 and cold-cathode gun 500.
Preferably, high frequency interacting system 100, input structure 200, export structure 300, collector 400 and cold cathode electricity
Sub- rifle 500 is connected by welded seal.
High frequency interacting system 100 includes shell 110 and the periodic slow wave structure 120 being set in shell 110.
Preferably, shell 110 can be round tube or square tube, make to be formed with a cavity in shell 110.
Preferably, periodic slow wave structure 120 is Huges coupled-cavity slow-wave structure, coupling aperture coupler slow wave knot arranged in a straight line
Structure, double coupling aperture Coupled-Cavity Slow Waves, linear trapezoidal Coupled-Cavity Slow Wave, the wrong trapezoidal Coupled-Cavity Slow Wave of single cross,
The wrong trapezoidal Coupled-Cavity Slow Wave of double cross or helical line slow-wave structure.Periodic slow wave structure 120 in the present invention includes but unlimited
In cited periodic slow wave structure type.
Periodic slow wave structure 120 includes multiple diaphragms 111.Multiple diaphragms 111 are set to shell in a manner of alternate up and down
In 110 cavitys formed, so that be formed one between the coupling slot in shell 110 on adjacent diaphragm in serpentine
Slow-wave transmission channel 700.
It is provided with drift tube 112 on each diaphragm 111, and is spaced and is coaxially disposed between adjacent drift pipe 112,
Make to form electron beam channel 600 in the cavity that shell 110 is formed.
Cold-cathode gun 500 includes electron gun pedestal 510, electronics gun housing body 520, cathode plate 530 and cold cathode 540.
Wherein, 520 one end of electronics gun housing body and electron gun pedestal 510 are tightly connected, the other end and high frequency interacting system
One end of shell 110 in 100 is tightly connected, and cold-cathode gun 500 and high frequency interacting system 100 is made to be sealedly connected on one
It rises.
Preferably, electron gun pedestal 510 is cylinder or cuboid.Its material is preferably magnetism-free stainless steel.
Preferably, electronics gun housing body 520 is rounded or rectangular.Its material is preferably 99# ceramic (99 aluminium oxide ceramics).
Preferably, electronics gun housing body 520 is to be tightly connected by welding with the shell 110 in high frequency interacting system 100
's.
Wherein, 530 one end of cathode plate is connected with electron gun pedestal 510, and cold cathode 540 is arranged in the other end.And cold yin
Pole 540 is located in the cavity of the formation of the shell 110 in high frequency interacting system 100, and is directed at electron beam channel 600.
Preferably, cathode plate 530 is cylinder or cuboid.Its material is preferably magnetism-free stainless steel.
Preferably, cold cathode 540 is Spindt cold cathode, diamond cold cathode or carbon nanotube cold cathode.In the present invention
Cold cathode 540 include but is not limited to cited cold cathode type.
Collector 400 includes collector ontology 410, collector bottom plate 420 and collector insulation shell 430.
430 one end of collector insulation shell and collector bottom plate 420 are tightly connected, collector insulation shell 430 it is another
End and the other end of the shell 110 in high frequency interacting system 100 are tightly connected.Preferably, collector insulation shell 430 is logical
Cross what welding was tightly connected with the shell 110 in high frequency interacting system 100.
Collector ontology 410 is located in collector bottom plate 420, collector insulation shell 430 and high frequency interacting system 100
The space that is formed of shell 110 in, and be set on collector bottom plate 420 in a manner of being directed at electron beam channel 600.
Input structure 200 is tightly connected in a manner of through shell 110 with shell 110, and input structure 200 is arranged in shell
Close to one end of cold-cathode gun 500 on body 110.
Input structure 200 includes the first rectangular waveguide 210 and input window 220.
The lower end of first rectangular waveguide 210 is inserted into shell 110 in a manner of through shell 110, and is contacted with shell 110
Place is connected by welded seal.The input cavity being connected to the cavity that shell 110 is formed is provided in the first rectangular waveguide 210
211.And input cavity 211 is connected with first resonant cavity in high frequency interacting system 100.
Input window 220 is connect with the upper end of the first rectangular waveguide 210 by welded seal.Preferably, input window 220 is same
Axis window or waveguide window.It is formed into thin slice cell type output window.
Export structure 300 is tightly connected in a manner of through shell 110 with shell 110, and export structure 300 is arranged in shell
Close to one end of collector 400 on body 110.
Export structure 300 includes the second rectangular waveguide 310 and output window 320.
The lower end of second rectangular waveguide 310 is inserted into shell 110 in a manner of through shell 110, and is contacted with shell 110
Place is connected by welded seal.The output cavity being connected to the cavity that shell 110 is formed is provided in the second rectangular waveguide 310
311.And output cavity 311 is connected with the last one resonant cavity in high frequency interacting system 100.
Output window 320 is connect with the upper end of the second rectangular waveguide 310 by welded seal.Preferably, output window 320 is same
Axis window or waveguide window.It is formed into thin slice cell type output window.
Cold cathode compact amplifier of the invention, is with the maximum difference of traditional vacuum device: electron gun transmitting
Electronics note have passed through the modulation of high frequency field during the launch process, the electronics note of modulation enters periodic structure can be more fully
Interaction occurs with high frequency field, the volume of vacuum device can greatly be reduced.And the electron gun hair of traditional electron tube
The electronics note penetrated is directly entered periodic structure without the modulation by high frequency field.
By using microwave modulation cold-cathode gun as electron source, cooperate periodic slow wave structure, it is right using high frequency field
Electronics note carries out density modulation, and modulated electronics note enters high frequency interacting system and interaction, energy occur for electromagnetic field of high frequency
Amount exchange realizes the amplification output of signal, to greatly reduce the periodicity of periodic structure, reduces electrovacuum amplifier
The volume and device fabrication difficulty of part.
Cold cathode compact amplifier operation principle process of the invention is as follows:
Cold cathode compact amplifier is evacuated, so that forming vacuum environment inside entire amplifier;
Cathode plate 530 is grounded, and 120 cavity of periodic slow wave structure connects negative dc voltage, and collector 400 connects negative DC voltage;
Microwave high-frequency field is inputted from the input structure 200 of amplifier;At this point, into high-frequency structure microwave there are two make
With: one side microwave action is in carbon nanotube cold cathode 540, and 540 surface of cold cathode is simultaneously in the effect of electrostatic field and high frequency field
Under obtain modulation electronics note, modulation electronics note is directly entered periodic slow wave structure 120;On the other hand, into periodic slow wave
With the modulation electronics note for being directly entered periodic structure note wave interaction occurs for the high frequency field of structure 120, realizes electronics note and high frequency
The energy exchange of field, so that high-frequency signal realizes amplification output.
It is specific:
1. a pair cold cathode compact amplifier is evacuated, so that forming vacuum environment inside entire amplifier.
2. cathode plate 530 is connect negative DC voltage, high frequency interacting system shell 110 is grounded, in this way in 540 table of cold cathode
Face forms horizontal electrostatic field to the left, and 540 surface of cold cathode generates stable autoelectronic current, and electromagnetic field of high frequency is from input
Structure 200 plays two critically important effects into high frequency interacting system 100:
The first, electromagnetic field of high frequency is with quasi-plane wave mode propagation, and electric field intensity direction is parallel with electrostatic field.Work as high-frequency electrical
Magnetic field travels to 540 surface of cold cathode, when consistent with electrostatic field direction, the enhancing of 540 surface field of cold cathode, and 540 table of cold cathode
The autoelectronic current that face generates will increase;It is contrary with electrostatic field when electromagnetic field of high frequency travels to 540 surface of cold cathode
When, 540 surface field of cold cathode weakens, and the autoelectronic current that 540 surface of cold cathode generates will reduce.Cold cathode 540 is quiet
The electronics note through ovennodulation is generated under electric field and high frequency field collective effect, the frequency of electronics note and the frequency of electromagnetic field of high frequency are kept
Unanimously, when the frequency of high frequency field changes, the frequency of electronics note also accordingly changes.The modulation amplitude of electronics note simultaneously
It is influenced by the power of electromagnetic field of high frequency, when the power of electromagnetic field of high frequency is bigger, the modulation amplitude of electronics note is also bigger;
The second, the slow-wave transmission channel 700 of high frequency interacting system and electron beam channel 600 are separated, and electronics note is logical
Road 600 is that drift tube 112 undertakes, and slow-wave transmission channel 700 is made of coupling slot 123.Electromagnetic field of high frequency from input structure 200 into
Enter high frequency interacting system, 600 size of electron beam channel is smaller, is off to electromagnetic field;Electromagnetic field is along coupling slot 123
Slow-wave transmission channel 700 is propagated, at this point, axial electric field is concentrated mainly in the gap of 112 port of drift tube and port, with
This modulation electronics note that cold cathode 540 generates simultaneously is propagated along electron beam channel 600, and electronics note is with high frequency field in drift tube
Interaction occurs in gap between 112 ports and port, realizes energy exchange, amplifies high frequency field signal.
High frequency field enters high frequency interacting system 100, is initially modulated to the electronics note that cold cathode 540 generates, then
Interaction occurs in interaction gap and modulation electronics note, volume and the period that can greatly reduce electron gun in this way are slow
The periodicity of wave structure 120 greatly reduced the volume of amplifier, realize the Miniaturization Design of vacuum electron device.
It is illustrated by taking the cold cathode compact amplifier of Ka wave band as an example below.
As shown in Figure 1 and Figure 2, a kind of cold cathode compact amplifier comprising high frequency interacting system 100, input structure
200, export structure 300, collector 400 and cold-cathode gun 500.High frequency interacting system 100, input structure 200, output
Structure 300, collector 400 are connected with cold-cathode gun 500 by welded seal.
Specifically,
High frequency interacting system 100 includes round or square casing 110 and periodic slow wave structure 120.
Periodic slow wave structure 120 is Huges coupled-cavity slow-wave structure.It includes multiple diaphragms 111.Multiple 111 or more diaphragms
Alternate mode is set in the cavity of the formation of shell 110 down, so that coupling slot in shell 110 on adjacent diaphragm it
Between be formed one be in serpentine slow-wave transmission channel 700.Drift tube 112 is provided on each diaphragm 111, and
It is spaced and is coaxially disposed between adjacent drift pipe 112, make to form electron beam channel 600 in the cavity that shell 110 is formed.
In the present embodiment, 111 overall diameter of diaphragm is Φ 4.80mm, and interior diameter is Φ 1.80mm, with a thickness of 0.5mm, material
For copper.There are 15 diaphragms 111 in entire high frequency interacting system 100, and be provided with outer radius 2.4mm on each diaphragm 111,
Inside radius is the coupling slot 123 of the kidney-shaped of 1.40mm, and the coupling slot 123 of adjacent diaphragms 111 differs 180 degree.
The overall diameter of drift tube 112 is Φ 1.80mm, and interior diameter is Φ 0.96mm, a length of 1.03mm.And adjacent drift
Clearance distance between 112 port of pipe and port is 0.37mm.The task of electron beam channel 600 is undertaken by all drift tubes 112,
112 interior diameter of drift tube is just exactly the diameter of phi 0.96mm of electron beam channel 600.
Cold-cathode gun 500 includes electron gun pedestal 510, electronics gun housing body 520, cathode plate 530 and cold cathode 540.
520 one end of electronics gun housing body and electron gun pedestal 510 are tightly connected, in the other end and high frequency interacting system 100
Shell 110 one end be tightly connected, be sealed connected together cold-cathode gun 500 with high frequency interacting system 100.
Specifically, electron gun pedestal 510 is made of 2.9mm × 2.9mm × 0.2mm cuboid, material is magnetism-free stainless steel,
It is connected with cathode plate 530.The diameter of carbon nanometer cold cathode 540 is Φ 0.56mm, and thickness 1um, material is carbon nanotube, is embedded in
On cathode plate 530.Cathode plate 530 is Φ 0.56mm by diameter, and the cylinder of a height of 1.5mm is constituted, and material is magnetism-free stainless steel.Electricity
Sub- gun housing body 520 has overall diameter Φ 5.2mm, and interior diameter is Φ 4.8mm, and the hollow cylinder of a height of 1mm is constituted, and material is 99# pottery
Porcelain, right end and periodic slow wave structure 120 are sealed to vacuum environment, and left end and electron gun pedestal 510 are sealed to vacuum environment.
Input structure 200 includes the first rectangular waveguide 210 and input window 220.First rectangular waveguide 210 is thickness 0.1mm,
High 4.5mm, long side 4.8mm, the rectangular waveguide of narrow side 0.7mm, material are copper.And its in high frequency interacting system 100
First resonant cavity be connected.Input window 220 uses sapphire window, is tightly connected with 210 upper end of the first rectangular waveguide.
Export structure 300 includes the second rectangular waveguide 310 and output window 320.Second rectangular waveguide 310 is thickness 0.1mm,
High 4.5mm, long side 4.8mm, the rectangular waveguide of narrow side 0.7mm, material are copper.And its in high frequency interacting system 100
The last one resonant cavity be connected.Output window uses sapphire window, is tightly connected with 310 upper end of the second rectangular waveguide.
Collector 400 includes collector ontology 410, collector bottom plate 420 and collector insulation shell 430.
430 one end of collector insulation shell is connect with collector bottom plate 420 by welded seal, collector insulation shell
430 other end is connect with the other end of the shell 110 in high frequency interacting system 100 by welded seal.
Collector ontology 410 is located in collector bottom plate 420, collector insulation shell 430 and high frequency interacting system 100
The space that is formed of shell 110 in, and be set on collector bottom plate 420 in a manner of being directed at electron beam channel 600.
The all parts of amplifier are welded into an entirety using microwave electron tube technique, and it is taken out
Gas, so that forming absolute vacuum environment inside entire microwave electron tube.
Electron gun pedestal during the work time, is connect the negative DC voltage of -10000V by Ka wave band cold cathode amplifier, is collected
Pole pedestal meets -5000V, high frequency interacting system frame ground, and such cold cathode surface is formed electrostatic field.When frequency is
35GHz, power are that the high-frequency electromagnetic field signal of 50mW enters high frequency interacting system from input structure, and cold cathode surface is in electrostatic
The electronics note of modulation is generated under the collective effect of field and high frequency field, high frequency field is through slow-wave transmission channel in high frequency interaction at the same time
It is transmitted in system, and is infused in the electronics of interaction gap and modulation and interaction occurs, carry out energy exchange, realized high
The amplification of frequency signal, higher frequency signal energy are exported via export structure.
Vacuum microelectronic device is using micrometer-nanometer processing technology production field-emissive cathode and to utilize the device of this cathode.
This device can work at room temperature, and starting speed is fast, and emission is big, can directly generate modulation electric current.With biography
The hot cathode of system is compared, and cold cathode does not have to heating at room temperature can launching electronics.And it has a following feature: one, it is non-
Linear current-voltage correlation;Two, the resistivity to rise and fall to temperature and radiation;Three, to electric field transient response.Thin film field causes hair
The generation that array is vacuum microelectronic device is penetrated to lay the foundation, in vacuum electron device using large scale integrated circuit technology and
Micrometer-nanometer processing technology can make microwave electron tube more compact, more minimize.
A kind of cold cathode compact amplifier of the invention makes full use of field emission cold cathode.With thermionic emission phase
Than, field emission cold cathode have it is low in energy consumption, can integrate, the series of advantages such as size is small, fast response time, with solid-state devices phase
Than with anti-interference, radiation hardness ability is strong, high-power advantage.Therefore, it is the desired electronic emission source of vacuum amplifier (V-AMP) part.
The present invention can solve traditional electrovacuum radiation source device and two class device of solid-state semiconductor radiation source device there are the problem of, phase
Than hot cathode electron tube it have the characteristics that it is small in size, can integrate, compared to solid state radiation sources device it have it is anti-interference, resistance to
Radianting capacity is strong, meanwhile, the features such as output power.
It should be noted that all features disclosed in this specification or disclosed all methods or in the process the step of,
Other than mutually exclusive feature and step, it can combine in any way.
In addition, above-mentioned specific embodiment is exemplary, those skilled in the art can opening in the disclosure of invention
It gives and finds out various solutions, and these solutions also belong to disclosure of the invention range and fall into protection of the invention
Within the scope of.It will be understood by those skilled in the art that description of the invention and its attached drawing be it is illustrative and not constitute to power
The limitation that benefit requires.Protection scope of the present invention is defined by the claims and their equivalents.
Claims (8)
1. a kind of cold cathode compact amplifier, which is characterized in that it includes high frequency interacting system (100), input structure
(200), export structure (300), collector (400) and cold-cathode gun (500);
The high frequency interacting system (100) includes shell (110) and the periodic slow wave structure that is set in the shell (110)
(120);
One end and the cold-cathode gun (500) of the shell (110) are tightly connected, and make the cold-cathode gun
(500) it is directly integrated in the high frequency interacting system (100), the other end and the collector of the shell (110)
(400) it is tightly connected;
The input structure (200) is tightly connected in a manner of through the shell (110) with the shell (110), and described
Input structure (200) is arranged on the shell (110) close to the one end of the cold-cathode gun (500);
The export structure (300) is tightly connected in a manner of through the shell (110) with the shell (110), and described
Export structure (300) is arranged on the shell (110) close to the one end of the collector (400);
The cold-cathode gun (500) uses microwave modulation cold-cathode gun as electron source, cooperates periodic slow wave structure
(120), electronics is infused using high frequency field and carries out density modulation;
The cold-cathode gun (500) includes electron gun pedestal (510), electronics gun housing body (520), cathode plate (530) and cold
Cathode (540);
Described electronics gun housing body (520) one end and the electron gun pedestal (510) are tightly connected, the other end and the high frequency interaction
It is tightly connected with the shell (110) in system (100);
Described cathode plate (530) one end is connected with the electron gun pedestal (510), and the cold cathode (540) is arranged in the other end;
The cold cathode (540) is located in the cavity of the formation of the shell (110) in the high frequency interacting system (100), and right
The quasi- electron beam channel (600).
2. a kind of cold cathode compact amplifier according to claim 1, which is characterized in that the periodic slow wave structure
It (120) include multiple diaphragms (111), multiple diaphragms (111) are set to the shell (110) shape in a manner of alternate up and down
At cavity in, make the shell (110) formed cavity in formed slow-wave transmission channel (700);
It is provided with drift tube (112) on each diaphragm (111), and is spaced between the adjacent drift tube (112)
And be coaxially disposed, make to form electron beam channel (600) in the cavity that the shell (110) are formed.
3. a kind of cold cathode compact amplifier according to claim 1, which is characterized in that the input structure (200)
Including the first rectangular waveguide (210) and input window (220);
Described first rectangular waveguide (210) one end is inserted into the shell (110) in a manner of through the shell (110), and
It is tightly connected with the shell (110) contact position;
The other end of the input window (220) and first rectangular waveguide (210) is tightly connected;
And the input cavity being connected to the cavity that the shell (110) are formed is provided in first rectangular waveguide (210)
(211)。
4. a kind of cold cathode compact amplifier according to claim 1, which is characterized in that the export structure (300)
Including the second rectangular waveguide (310) and output window (320);
Described second rectangular waveguide (310) one end is inserted into the shell (110) in a manner of through the shell (110), and
It is tightly connected with the shell (110) contact position;
The other end of the output window (320) and second rectangular waveguide (310) is tightly connected;
And the output cavity being connected to the cavity that the shell (110) are formed is provided in second rectangular waveguide (310)
(311)。
5. a kind of cold cathode compact amplifier according to claim 2, which is characterized in that collector (400) packet
Include collector ontology (410), collector bottom plate (420) and collector insulation shell (430);
Described collector insulation shell (430) one end and the collector bottom plate (420) are tightly connected, the collector insulation shell
Shell (110) in the other end of body (430) and the high frequency interacting system (100) is tightly connected;
The collector ontology (410) is located at the collector bottom plate (420), the collector insulation shell (430) and described
In the space that shell (110) in high frequency interacting system (100) is formed, and to be directed at the side of the electron beam channel (600)
Formula is set on the collector bottom plate (420).
6. a kind of cold cathode compact amplifier according to claim 1, which is characterized in that the cold cathode (540) is
Spindt cold cathode, graphene cold cathode or carbon nanotube cold cathode.
7. a kind of cold cathode compact amplifier according to one of claims 1 to 6, which is characterized in that the period is slow
Wave structure (120) is that Huges coupled-cavity slow-wave structure, coupling aperture Coupled-Cavity Slow Wave arranged in a straight line, double coupling aperture couplers are slow
Wave structure, linear trapezoidal Coupled-Cavity Slow Wave, the wrong trapezoidal Coupled-Cavity Slow Wave of single cross, the wrong trapezoidal coupler slow wave of double cross
Structure or helical line slow-wave structure.
8. a kind of cold cathode compact amplifier according to one of claims 1 to 6, which is characterized in that the high frequency is mutual
Action system (100), the input structure (200), the export structure (300), the collector (400) and the cold cathode
Electron gun (500) is connected by welded seal.
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CN109088610B (en) * | 2018-08-16 | 2021-04-13 | 电子科技大学 | Cold cathode orthogonal field amplifier and application structure thereof |
CN109872935B (en) * | 2019-02-15 | 2021-02-02 | 电子科技大学 | Multi-injection high-order mode array type high-frequency interaction system based on cold cathode |
CN111524766B (en) * | 2020-04-07 | 2021-09-24 | 电子科技大学 | Processing method of multi-piece stacked terahertz high-frequency interaction system |
CN114823252B (en) * | 2022-04-29 | 2023-07-14 | 电子科技大学 | Bidirectional multi-beam traveling wave cascade amplifier based on cold cathode |
CN115064426A (en) * | 2022-06-06 | 2022-09-16 | 北京航空航天大学 | High-precision alignment assembly method based on micro-nano process, alignment mark and application |
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"Theoretical research on a TWT based on magnetic injection CNT cold cathode electron gun";Haiyang Zhang等;《2017 30th International Vacuum Nanoelectronics Conererence》;20170714;第248页左栏第1行至第249页右栏第5行 * |
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