CN114420520B - Microstrip line-based band electron beam focusing method, device and application - Google Patents
Microstrip line-based band electron beam focusing method, device and application Download PDFInfo
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- CN114420520B CN114420520B CN202210056198.XA CN202210056198A CN114420520B CN 114420520 B CN114420520 B CN 114420520B CN 202210056198 A CN202210056198 A CN 202210056198A CN 114420520 B CN114420520 B CN 114420520B
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- H01—ELECTRIC ELEMENTS
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- H01J23/02—Electrodes; Magnetic control means; Screens
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- H01J23/083—Electrostatic focusing arrangements
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Abstract
The invention relates to the technical field of vacuum electronics, and discloses a microstrip line-based band electron beam focusing method, which comprises the following steps: the invention also discloses a focusing device of the strip electron beam based on the microstrip line, which is used for implementing the focusing method of the strip electron beam based on the microstrip line, and simultaneously, the invention also discloses an application of the strip electron beam based on the microstrip line, comprising the following steps: the focusing device is applied to the fields including but not limited to high resolution radar, high speed data communication, electronic attack and radio astronomy. The invention has good focusing effect on the strip electron beam and can effectively inhibit the instability of the transmission of the strip electron beam in the microstrip line vacuum electronic device.
Description
Technical Field
The invention relates to the technical field of vacuum electronics, in particular to a microstrip line-based band electron beam focusing method, a microstrip line-based band electron beam focusing device and application.
Background
Microstrip line vacuum electronic devices are widely applied in the fields of high-resolution radars, high-speed data communication, electronic attack, radio astronomy and the like, and compared with traditional vacuum electronic devices, microstrip line devices such as microstrip line traveling wave tubes, microstrip line inverse wave tubes and the like have obvious advantages, microstrip lines adopt strip-shaped electron beams, and the strip-shaped electron beams can carry higher current than traditional circular electron beams. In addition, the ribbon beam is thin enough and closer to the surface of the high-frequency circuit, thus being capable of good coupling with the slow wave structure and having high energy conversion efficiency, and these advantages have stimulated the development of microstrip line vacuum electronic devices.
However, the biggest difficulty in the development of microstrip line vacuum electronic devices is the focusing of the ribbon beam. The space charge field generated by the band-shaped electron beam is also extremely complex due to the complex boundary conditions in microstrip lines: the space charge field generated by the band-shaped electron beam is also non-axisymmetric. In addition, the smaller the working voltage of the microstrip line vacuum electronic device is, the higher the charge density of the electron beam and the stronger the repulsive force can be under the same current density, and the time for the electron beam to pass through the focusing system is prolonged due to the small working voltage of the microstrip line vacuum electronic device, so that the focusing difficulty of the electron beam is increased. The ribbon beam in a microstrip line vacuum electronic device is very difficult to focus by conventional means. For example, it has been found in experiments that a ribbon beam breaks and forms a plurality of filaments after a certain distance of transport under the influence of a magnetic field in the beam transport direction (z-direction), which is known as Diocotron instability, or Diocotron instability, further exacerbating the focusing difficulty. With the increasing demand for high power devices, there is an increasing demand for focusing of electron beams in microstrip line vacuum electronic devices.
Disclosure of Invention
The invention provides a microstrip line-based band electron beam focusing method, a microstrip line-based band electron beam focusing device and application, so that a microstrip line vacuum electronic device can be better applied to the fields of high-resolution radars, high-speed data communication, electronic attack, radio astronomy and the like.
The invention is realized by the following technical scheme:
a microstrip line-based focusing method of a ribbon electron beam, comprising: an electric field is generated in a space where the microstrip line exists, and the electric field equipotential the edges of the band-shaped electron beam of the microstrip line.
In the technical scheme, the space where the microstrip line exists generates an electric field, and the electric field can lead the edge of the strip electron beam to become equipotential, thereby realizing the stable transmission of the strip electron beam in the microstrip line vacuum electronic device (focusing device).
As an optimization, generating an electric field in a space where the microstrip line exists specifically includes: and a plurality of metal wires are added around the microstrip line, the length direction of each metal wire is parallel to the movement direction of the ribbon electron beam, and voltages are applied to the metal wires, so that an electric field is generated in a space near the microstrip line.
As optimization, the metal wires are provided with 3 metal wires, wherein two metal wires are arranged on a medium substrate on which the microstrip line is placed, the two metal wires arranged on the medium substrate are respectively arranged on two sides of the microstrip line along the movement direction of the ribbon electron beam, and the other metal wire is positioned above the medium substrate of the microstrip line.
As an optimization, generating an electric field in a space where the microstrip line exists further includes: and applying voltage on the shell wall of the metal shell for placing the microstrip line so as to generate an electric field inside the metal shell.
The invention also discloses a focusing device of the strip electron beam based on the microstrip line, which is used for implementing the focusing method of the strip electron beam based on the microstrip line, and comprises a metal shell, the microstrip line, a medium substrate and a plurality of metal wires, wherein the length direction of the metal wires is arranged along the moving direction of the strip electron beam, the metal shell is penetrated and arranged along the periodic direction of the microstrip line to form a metal channel, the medium substrate is arranged on the channel wall in the metal channel, the microstrip line is arranged on the medium substrate, and the metal wires are respectively arranged around the microstrip line.
In the technical scheme, because the space charge field in the existing microstrip line vacuum electronic device does not meet the condition, a plurality of metal wires are added in the microstrip line vacuum electronic device, then voltages are applied to the channel wall, the metal wires and the microstrip line, and the applied voltages can generate an electric field which can make the edge of the strip-shaped electron beam become equipotential, thereby realizing stable transmission of the strip-shaped electron beam in the microstrip line vacuum electronic device (focusing device).
As optimization, the metal wires are provided with 3 wires, namely a first wire, a second wire and a third wire, wherein the second wire and the third wire are arranged on the medium substrate, the second wire and the third wire are respectively arranged on two sides of the microstrip line along the movement direction of the ribbon electron beam, and the first wire is positioned above the medium substrate.
Preferably, the material of the dielectric substrate includes, but is not limited to, organic silicon, silicon dioxide or beryllium oxide, and the material of the microstrip line, the metal wire and the metal shell includes, but is not limited to, oxygen-free copper.
Preferably, the microstrip line has a sine shape.
The invention also discloses an application of the strip-shaped electron beam based on the microstrip line, which comprises the following steps:
the focusing device is applied to the fields including but not limited to high resolution radar, high speed data communication, electronic attack and radio astronomy.
As an optimization, the focusing device is applied to the fields including but not limited to high-resolution radar field, high-speed data communication field, electronic attack field and radio astronomy field, and the debugging steps are as follows:
applying voltage to two ends of a microstrip line of the focusing device so as to generate a strip-shaped electron beam;
and adjusting the positions of the metal wires, and simultaneously adjusting the voltages applied to the microstrip line, the metal wires and the metal shell to make the edges of the strip electron beam of the microstrip line of the focusing device equipotential.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the focusing device disclosed by the invention is simple to process, the microstrip line is not required to be modified, and only a plurality of metal wires are required to be added near the microstrip line.
2. The invention has good focusing effect on the strip electron beam and can effectively inhibit the instability of the transmission of the strip electron beam in the microstrip line vacuum electronic device.
3. The band-shaped electron beam of the invention has low magnetic field, and can focus the electron beam with a magnetic field size far lower than that of the traditional uniform magnetic field.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are needed in the examples will be briefly described below, it being understood that the following drawings only illustrate some examples of the present invention and therefore should not be considered as limiting the scope, and that other related drawings may be obtained from these drawings without inventive effort for a person skilled in the art. In the drawings:
fig. 1 is a schematic structural diagram of a focusing device of a strip electron beam based on microstrip lines according to the present invention;
FIG. 2 is a top cross-sectional view of FIG. 1 (without first conductor);
FIG. 3 is a front view of FIG. 1;
FIG. 4 is a simulation of a ribbon beam using CST;
FIG. 5 is a simulated view of a ribbon beam in the present focusing apparatus;
fig. 6 is a side view of the band-like electron beam of fig. 5.
In the drawings, the reference numerals and corresponding part names:
1-microstrip line, 2-metal shell, 3-dielectric substrate, 4-wire two, 5-wire three, 6-wire one.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
Example 1
A microstrip line-based focusing method of a ribbon electron beam, comprising: an electric field is generated in a space where the microstrip line exists, and the electric field equipotential the edges of the band-shaped electron beam of the microstrip line.
The invention is based on a stable condition of focusing the band-shaped electron beam, namely, the band-shaped electron beam can stably transmit when the edges of the band-shaped electron beam are equipotential.
The stabilizing conditions are not conventional to those skilled in the art. This is because, in general, the band-shaped electron beam is focused by a uniform magnetic field, but because the space charge field distribution of the band-shaped electron beam is not axisymmetric, a very high magnetic field is required for focusing.
In order to study the instability of the band electron beam in a uniform magnetic field, a uniform transverse electric field is added in a free space, a uniform longitudinal magnetic field is added, finally, an electron with an initial speed of 0 is placed, the movement track of the electron in the magnetic field is found to be a wheel cycloid through equation deduction, and the electron always returns to an equipotential line passing through the initial position of the electron beam.
The space charge field of a ribbon beam is understood to be a complex transverse electric field, when a sufficiently large longitudinal magnetic field is added, at which time the radius of gyration of electrons in the ribbon beam is much smaller than the radius of curvature of the potential lines, and the beam can be considered to perform a rocking motion along equipotential lines passing through its initial position.
Therefore, instability of the band beam in a uniform magnetic field can be attributed to equipotential lines not matching the beam edges. In this case, the electron beam requires a very high uniform magnetic field to suppress its instability. In order to reduce the intensity of the focusing magnetic field of the band beam, the above-described stable condition of the band beam focusing is proposed.
In this embodiment, the generation of the electric field in the space where the microstrip line exists specifically includes: and a plurality of metal wires are added around the microstrip line, the length direction of each metal wire is parallel to the movement direction of the ribbon electron beam, and voltages are applied to the metal wires, so that an electric field is generated in a space near the microstrip line.
Specifically, the metal wires are provided with 3 metal wires, wherein two metal wires are arranged on a medium substrate on which the microstrip line is placed, the two metal wires arranged on the medium substrate are respectively arranged on two sides of the microstrip line along the movement direction of the ribbon electron beam, and the other metal wire is positioned above the medium substrate of the microstrip line.
In this embodiment, generating the electric field in the space where the microstrip line exists further includes: and applying voltage on the shell wall of the metal shell for placing the microstrip line so as to generate an electric field inside the metal shell.
Example 2
As shown in fig. 1, a focusing device for a microstrip line-based ribbon beam is used to implement a microstrip line-based ribbon beam focusing method, and includes a metal housing 2, a microstrip line 1, a dielectric substrate 3, and a plurality of metal wires (4, 5, 6), where the length direction of the metal wires is set to the moving direction of the ribbon beam, in this embodiment, the microstrip line 1 is sinusoidal, and the direction of periodic extension, that is, the moving direction of the ribbon beam, specifically, as shown in fig. 2, the width of the microstrip line 1 is a, the period length is p, and the line width is c.
Since the space charge field in the existing microstrip line vacuum electronic device does not meet the condition, a plurality of metal wires are added in the microstrip line vacuum electronic device, and then voltages are applied to the channel wall, the metal wires and the microstrip line, and the applied voltages can generate an electric field which can make the edge of the ribbon electron beam become equipotential, so that stable transmission of the ribbon electron beam in the microstrip line vacuum electronic device (focusing device) can be realized.
The metal shell is penetrated and arranged along the periodic direction of the microstrip line to form a metal channel, the medium substrate is arranged on the channel wall in the metal channel, the microstrip line is arranged on the medium substrate, and a plurality of metal wires are respectively arranged around the microstrip line.
In this embodiment, the number of the metal wires is 3, namely, a first wire 6, a second wire 4 and a third wire 5, the second wire 4 and the third wire 5 are disposed on the dielectric substrate 3, the second wire 4 and the third wire 5 are disposed on two sides of the microstrip line 1 along the movement direction of the ribbon beam, and the first wire 6 is located above the dielectric substrate 3. Specifically, as shown in fig. 2, the widths of the first and second wires 6 and 4 are a2, the width of the third wire 5 is a3, and the width of the metal channel is tx. Of course, it should be noted that the widths of the first wire 6 and the second wire 4 are not necessarily equal, and the widths of the first wire 6, the second wire 4 and the third wire 5 may be set for debugging according to the specific situation.
As shown in fig. 3, the microstrip line is located at a distance d2 from the second and third conductors 4 and 5, the metal channel top is located at a distance th from the medium, the first conductor 6 is located at a distance wh from the medium substrate 3, and the thickness of the medium substrate is sh. The distances between the second and third wires 4 and 5 and the microstrip line 1 are not necessarily equal.
The voltages applied to the channel walls, the first line 6, the second line 4, the third line 5, and the microstrip line 1 are vt, v1, v2, v3, and vm, respectively. The above voltages can also be optimally combined by tuning. The debugging tool can adopt CST, and the CST is utilized to simulate particle tracking in the band-shaped electron beam, and the simulation result is shown in fig. 4. As can be seen from the simulation results of FIG. 4, the focusing effect of the band-shaped electron beam generated by the focusing method and the focusing device of the invention is better, and the band-shaped electron beam is more concentrated. As shown in fig. 5 and 6, in the focusing apparatus of the present invention, a simulation image (the portion of the middle white portion of fig. 5, which carries black, is a band-shaped electron beam) was generated using the focusing method of the present invention, and it can be seen that the band-shaped electron beam remains substantially unchanged in shape during movement.
The specific ranges of the parameters are shown in Table 1:
TABLE 1
| Parameters (parameters) | Numerical value/mm | Range |
| d2 | 0.4 | d2 is generally required to be greater than 10% of a |
| th | 1.205 | Depending on the actual microstrip line design |
| wh | 1.07 | The farther and better and less than th under stable conditions are satisfied |
| sh | 0.2 | Depending on the actual microstrip line design |
| a2 | 0.31 | Typically a is between 0.1 and 1 |
| a3 | 0.31 | Generally less than a |
| |
3 | Depending on the actual microstrip line design |
| a | 0.86 | Depending on the actual microstrip line design |
| p | 0.38 | Depending on the actual microstrip line design |
| c | 0.05 | Depending on the actual microstrip line design |
In this embodiment, the first, second and third wires are all identical in shape and are strip-shaped metal wires. The dielectric substrate material includes, but is not limited to, organosilicon, silicon dioxide, or beryllium oxide. The materials of the microstrip line, the metal wire and the metal shell include, but are not limited to, oxygen-free copper.
Example 3
An application of a strip electron beam based on microstrip lines, comprising the following steps:
the focusing device is applied to the fields including but not limited to high-resolution radar field, high-speed data communication field, electronic attack field and radio astronomy field;
before application, the focusing device needs to be debugged in the following way:
applying voltage to two ends of a microstrip line of the focusing device so as to generate a strip-shaped electron beam;
and generating an electric field in the space in the metal channel of the focusing device, so that the edges of the strip electron beam of the microstrip line of the focusing device are equipotential.
In this embodiment, an electric field is generated in a space in a metal channel of the focusing device, so that an edge equipotential of a band-shaped electron beam of a microstrip line of the focusing device is specifically: and adjusting the positions of the metal wires, and simultaneously adjusting the voltages applied to the microstrip line, the metal wires and the metal shell to make the edges of the strip electron beam of the microstrip line of the focusing device equipotential.
Specifically, adjusting the positions of the metal wires and the voltages applied to the microstrip line, the metal wires and the metal shell can be used for debugging the particle tracking simulation result in the ribbon beam by observing the CST.
The inside of the metal case is in a vacuum state.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (7)
1. A microstrip line-based focusing method of a ribbon electron beam, comprising: an electric field is generated in a space where a microstrip line exists, and the electric field makes the edges of a band-shaped electron beam of the microstrip line equipotential, specifically:
and adding a plurality of metal wires around the microstrip line, wherein the length direction of each metal wire is parallel to the movement direction of the band-shaped electron beam, applying voltage on the metal wires to enable a space near the microstrip line to generate an electric field, wherein 3 metal wires are arranged on a medium substrate for placing the microstrip line, two metal wires arranged on the medium substrate are respectively arranged on two sides of the microstrip line along the movement direction of the band-shaped electron beam, and the other metal wire is positioned above the medium substrate of the microstrip line.
2. The method of focusing a microstrip-line-based ribbon beam according to claim 1, wherein generating an electric field in a space where the microstrip line exists further comprises: and applying voltage on the shell wall of the metal shell for placing the microstrip line so as to generate an electric field inside the metal shell.
3. The utility model provides a focusing means based on banded electron beam of microstrip line for implementing the microstrip line of arbitrary claim 1-2's banded electron beam's focusing method, includes metal casing (2), microstrip line (1), medium substrate (3), its characterized in that still includes a plurality of metal wires, the length direction of metal wire with banded electron beam's direction of motion parallel arrangement, metal casing (2) are followed the periodic direction of microstrip line (1) runs through and sets up and form the metal passageway, medium substrate (3) set up on the passageway wall in the metal passageway, microstrip line (1) set up on medium substrate (3), a plurality of metal wires are set up respectively around microstrip line (1), metal wire is equipped with 3, is wire two (4) and wire three (5) respectively, wire two (4) and wire three (5) set up respectively in microstrip line (1) are followed the direction of motion of banded electron beam's (6) medium substrate (3), and wire two (4) and wire three (5) are set up respectively in microstrip line (1) are located on the medium substrate (6) of both sides.
4. A microstrip-line-based ribbon beam focusing apparatus according to claim 3, wherein the material of the dielectric substrate (3) includes, but is not limited to, organosilicon, silicon dioxide or beryllium oxide, and the materials of the microstrip line (1), metal wire and metal housing (2) include, but are not limited to, oxygen-free copper.
5. A focusing device of a strip electron beam based on microstrip lines according to claim 3, characterized in that the microstrip line (1) has the shape of a sine-wave.
6. A microstrip line-based ribbon beam application comprising:
use of a focusing device according to any of claims 3-5 in applications including, but not limited to, the field of high resolution radars, the field of high speed data communications, the field of electronic attacks, the field of radio astronomy.
7. The application of the microstrip-line-based ribbon beam as claimed in claim 6, wherein the focusing device is applied to the fields including but not limited to high-resolution radar, high-speed data communication, electronic attack, radio astronomy, and the debugging steps are as follows:
applying voltage to two ends of a microstrip line of the focusing device so as to generate a strip-shaped electron beam;
and adjusting the positions of the metal wires in the focusing device, and simultaneously adjusting the voltages applied to the microstrip line, the metal wires and the metal shell in the focusing device to make the edges of the strip electron beam of the microstrip line of the focusing device equipotential.
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| JP2001292028A (en) * | 2000-04-05 | 2001-10-19 | Murata Mfg Co Ltd | Adjustment method for voltage controlled oscillator |
| GB0814618D0 (en) * | 2008-08-11 | 2008-09-17 | Univ Leeds | Apparatus and method for measuring absorption charateristics of samples |
| CN102903587B (en) * | 2012-10-24 | 2015-07-15 | 电子科技大学 | Radial logarithmic spiral micro-stripe slow wave line |
| CN103258703B (en) * | 2013-05-03 | 2015-10-21 | 电子科技大学 | A kind of microstrip line slow-wave structure |
| CN105513928B (en) * | 2016-01-04 | 2017-12-19 | 电子科技大学 | A kind of slow-wave structure of the plane line of rabbet joint |
| CN106788257A (en) * | 2016-11-23 | 2017-05-31 | 西南大学 | Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode |
| CN107887242A (en) * | 2017-11-06 | 2018-04-06 | 电子科技大学 | A kind of micro strip line type slow-wave structure of substrate fluting |
| CN108648978B (en) * | 2018-05-25 | 2023-09-19 | 东南大学 | Microstrip meanderline slow wave structure based on periodic metal cylinder |
| CN112345809B (en) * | 2020-10-15 | 2022-04-19 | 深圳大学 | Electron beam time amplification oscilloscope and measurement system thereof |
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| WO2004077502A2 (en) * | 2003-01-28 | 2004-09-10 | Obschestvo S Ogranichennoi Otvetstvennostju Epilab | Ecr-plasma source and methods for treatment of semiconductor structures |
| CN111640638A (en) * | 2020-05-28 | 2020-09-08 | 电子科技大学 | Staggered double-line planar traveling wave tube for high-power high-frequency high-order mode work |
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