CN105355528B - A kind of bielectron note terahertz radiation source for crossing mould cascade high-frequency structure - Google Patents
A kind of bielectron note terahertz radiation source for crossing mould cascade high-frequency structure Download PDFInfo
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- CN105355528B CN105355528B CN201510707076.2A CN201510707076A CN105355528B CN 105355528 B CN105355528 B CN 105355528B CN 201510707076 A CN201510707076 A CN 201510707076A CN 105355528 B CN105355528 B CN 105355528B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
- H01J25/42—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field
- H01J25/44—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field the forward travelling wave being utilised
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/04—Cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/06—Electron or ion guns
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Abstract
The invention provides a kind of bielectron note terahertz emission source.The terahertz emission source used the high-frequency structure of mould cascade folded waveguide traveling wave amplification, using higher modes TE20Mould can significantly increase high-frequency structure size, reduce microfabrication difficulty as mode of operation；Using mode structure cascade high frequency, the length of single hop folded waveguide slow-wave structure can be shortened, reduce the requirement to magnetic field.Noted and encouraged using bielectron, power output can be improved, while reduce the requirement to cathode current emission density.In same terahertz radiation source, not only the output of high power THz wave had been realized simultaneously but also beneficial to design and processing, so as to be advantageous to application of the terahertz radiation source in anti-interference, harmful substance detection, ULTRA-WIDEBAND RADAR long-range detection and high-resolution imaging radar etc..
Description
Technical field
The present invention relates to vacuum electron device technical field, more particularly to a kind of bielectron note for crossing mould cascade high-frequency structure
Terahertz radiation source.
Background technology
Terahertz (Terahertz) ripple is that frequency is in 0.1THz-10THz (1THz=1012Hz the electromagnetic wave between), position
Between the microwave and millimeter wave and far infrared light wave of development relative maturity, its unique wavelength characteristic causes the wave band in measurement material
The fields such as optical properties, biomedical imaging, surface chemistry and the research of high field condensed state matter of material matter, which have, widely should
With value, while there is also important application prospect for radar detection, the secret communication in military field.THz wave military and
The significant application value of civil area, cause the highest attention of the particularly military of national governments and put into substantial amounts of resource
For developing THz wave science and technology.THz wave has market potential prospect in dual-use field why also not,
Widely application can be obtained particularly in national defenceWherein most directly and most the underlying cause is a lack of high power, tight
Gather adjustable room temperature terahertz radiation source, it pushes one of wide variety of bottleneck to as Terahertz Technology.Therefore seek to have
Efficacious prescriptions method, the high performance terahertz radiation source of the new mechanism development of exploration are very necessary, and to promoting THz wave to exist
Application has important strategic importance of both military and civilian.
There are a variety of methods to produce terahertz radiation.Such as：Semiconductor terahertz radiation source (such as THz-QCL)；
Terahertz generator based on photonic propulsion；Utilize terahertz radiation source (including Terahertz vacuum device, the electronics of free electron
Cyclotron maser and free-electron laser)；Terahertz emission source based on high energy acclerator etc..THz-QCL radiation sources due to by
The limitation of extremely low temperature turns into its wide variety of barrier, and the power of the THz source output based on photonic propulsion is relatively low, and is based on
The terahertz emission source of high energy acclerator is due to needing big accelerator, and it is extensively using the application for being included in military field
It is greatly limited.In terahertz emission source, the folded waveguide travelling-wave amplifier (Folded based on vacuum electronics
WaveguideTraveling-Wave Tube, abbreviation FW-TWT) due to taking into account helix TWT and coupler traveling wave simultaneously
The advantages of pipe, there is high-gain and wide band feature, high power, broadband, compact terahertz emission source can be developed into, it is special
It is not application of the folded waveguide travelling-wave amplifier on Terahertz radar, thus receives the highest attention of scholars and the military.
Relatively similar vacuum electronics device, its lamps structure is firm, thermal diffusivity is good, the loss of dispersion flattene, high-frequency transmission is small,
Coupling matching is easy, the advantage such as compatible with MEMS technology, therefore folded waveguide travelling-wave tubes preferably solves THz devices length
Phase fails the high-power and wide band contradiction overcome.Result of study shows that folded waveguide travelling-wave tubes is millimeter wave and submillimeter
The extremely potential wideband high-power device of wave band.The hot research that it turns into vacuum electronics terahertz emission source is led
Domain.
Fig. 1 is the schematic diagram that Terahertz unistage type list notes folded waveguide travelling-wave amplifier in the prior art.Travelling-wave amplifier
By input signal port 101 by input signal RFinIt is input in traveling wave high-frequency structure 107, in high-frequency structure and electron gun
Traveling wave electronics note 105 interacts caused by negative electrode 102, exaggerated THz wave RFoutExport, act on from output port 104
Electronics note afterwards is collected pole 106 and collected.The structure is common travelling-wave tube amplifier, has power amplification and band spread
Characteristic.
During the present invention is realized, it is found by the applicant that prior art THz wave radiation source has following technical problem：
(1) coupled impedance of folded waveguide structure in itself is low, and interaction efficiency is not high, and power output is small, makes it in ultra-wide
The application aspects such as the long-range detection of band radar, high-resolution imaging radar are greatly limited.
(2) due to the limitation of physical dimension, in Terahertz frequency range processing difficulties, processing precision direct influence arrives amplifier
Service behaviour.Therefore process technology limits the realization of its high-power folded waveguide travelling-wave amplifier.
The content of the invention
(1) technical problems to be solved
In view of above-mentioned technical problem, the invention provides a kind of bielectron note for crossing mould cascade folded waveguide travelling-wave amplifier
Terahertz emission source.
(2) technical scheme
According to an aspect of the invention, there is provided a kind of bielectron note for cascading mould folded waveguide travelling-wave amplifier is too
Hertzion radiation source.The bielectron note terahertz emission source for cascading mould folded waveguide travelling-wave amplifier includes：The double electricity of first paragraph
Son note electron gun, second segment bielectron note electron gun, first paragraph electronics note collector, second segment electronics note collector, magnetic field production
Raw part, first paragraph folded waveguide high-frequency structure, second segment folded waveguide high-frequency structure.Wherein：First paragraph bielectron notes electronics
Rifle, including：The first negative electrode and the second negative electrode of first paragraph, wherein, the first negative electrode and the second emission of cathode electronics note are in level side
To laid out in parallel, the direction of propagation is parallel to each other.Second segment bielectron notes electron gun, including：First negative electrode of second segment and second
Negative electrode, wherein, laid out in parallel, the direction of propagation are parallel to each other in the horizontal direction for the first negative electrode and the second emission of cathode electronics note.
First paragraph electronics notes collector, is arranged at the face position of the negative electrode of first paragraph bielectron note electron gun, first paragraph
Bielectron note negative electrode and first paragraph electronics note collector between form first paragraph Beam and wave interaction area.Second segment electronics note is received
Collector, it is arranged at the face position of the negative electrode of second segment bielectron note electron gun, the bielectron note negative electrode and second segment of second segment
Second segment section Beam and wave interaction area is formed between electronics note collector.
Magnetic field generation section part, the both sides in first paragraph Beam and wave interaction area and second segment Beam and wave interaction area are arranged at, used
The magnetic field that transmission direction is noted with second segment bielectron is noted parallel to first paragraph bielectron in producing.High-frequency structure is cascaded, including：The
One section of high-frequency structure, it is arranged at first paragraph Beam and wave interaction area；Second segment high-frequency structure, it is arranged at second segment Beam and wave interaction
Area, its ripple entrance are connected to the outlet of first paragraph high-frequency structure by cascade structure.
Higher modes TE20The THz wave of mould is by input signal port incidence first paragraph high-frequency structure, in first paragraph height
The bielectron note interaction of the interior and first paragraph of frequency structure, THz wave obtains power amplification and frequency bandspread, by first
Bielectron note after section high-frequency structure effect is collected by first paragraph electronics note collector；THz wave passes through cascade structure incidence
Two sections of high-frequency structures；Second segment bielectron note electron gun negative electrode caused by bielectron note, in second segment high-frequency structure with
THz wave is interacted, and power amplification and frequency bandspread are carried out to THz wave, after the effect of second segment high-frequency structure
Bielectron note is collected by second segment electronics note collector, and the THz wave after power amplification and frequency bandspread is by second segment high frequency knot
The ripple outlet output of structure.
(3) beneficial effect
It can be seen from the above technical proposal that the present invention cascaded the bielectron note terahertz of mould folded waveguide travelling-wave amplifier
Hereby radiation source has the advantages that：
(1) interacted using bielectron note with THz wave, compared with single electron is noted, can reduce and cathode current is sent out
The requirement of density is penetrated, is advantageous to increase the service life of device, and introduces bielectron note to shorten saturation length, is shortened whole
The length of pipe, reduce requirement of the device to magnetic field；
(2) two electronics of laid out in parallel are noted in the horizontal direction, using higher modes TE20Mould notes phase interaction with bielectron
With, make horizontal direction laid out in parallel bielectron note just at TE20The electric field of mould most strength, can reach interaction efficiency
It is maximum；
(3) cascade structure is used, can be amplified further the power of ripple, is cascaded by multisection type folded waveguide real
The high-power output in Terahertz frequency range is showed.
Brief description of the drawings
Fig. 1 is the schematic diagram of Terahertz folded waveguide travelling-wave amplifier in the prior art；
Fig. 2 is the bielectron note terahertz emission source structure signal crossed mould and cascade high-frequency structure in the embodiment of the present invention
Figure；
Fig. 3 is the bielectron note terahertz emission source that cascade of the embodiment of the present invention crosses mould folded waveguide travelling-wave amplifier
Dispersion curve figure.
【Main element symbol description of the present invention】
The negative electrode of 201- first paragraphs first；The negative electrode of 202- first paragraphs second
203- bielectrons note electron gun bottom；The negative electrode of 204- second segments first
The negative electrode of 205- second segments second；207- export structures
206- focusing magnetic fields；The electronics of 208- second segments second is noted；
The electronics of 209- second segments first is noted；210- second segments electronics notes collector；
211- second segment high-frequency structures；212- first paragraph high-frequency structures；
213- first paragraphs electronics notes collector；The electronics of 214- first paragraphs second is noted；
The electronics of 215- first paragraphs first is noted；217- input structures；
216- focusing magnetic fields；
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
It should be noted that in accompanying drawing or specification description, similar or identical part all uses identical figure number.It is attached
The implementation for not illustrating or describing in figure, it is form known to a person of ordinary skill in the art in art.In addition, though this
Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is worth accordingly without being definitely equal to, but be able to can connect
The error margin received is similar to be worth accordingly in design constraint.In addition, the direction term mentioned in following examples, such as
" on ", " under ", "front", "rear", "left", "right" etc., only it is the direction of refer to the attached drawing.Therefore, the direction term used be for
Illustrate not to be used for limiting the present invention.
The invention provides one kind to cross mould cascade high-frequency structure bielectron note terahertz emission source.The bielectron notes Terahertz
In radiation source, higher modes TE20Bielectron of the THz wave of mould first in the presence of first paragraph high-frequency structure with first paragraph
Interaction occurs for note, and THz wave has obtained power amplification and frequency bandspread, then passed through cascade structure incidence second segment high frequency
Structure；Under the effect of second segment high-frequency structure, THz wave continues to interact with second segment bielectron note, and THz wave enters one
Step obtains power amplification and frequency bandspread.
In one exemplary embodiment of the present invention, there is provided a kind of bielectron note terahertz emission source.Fig. 2 is this hair
The structural representation of bielectron note terahertz radiation source in bright embodiment.
Fig. 2 is refer to, the present embodiment, which crosses mould cascade high-frequency structure bielectron note terahertz emission source, to be included：Bielectron note electricity
Sub- rifle, cascade high-frequency structure, magnetic field generation section part.Wherein, cascade high-frequency structure includes：First paragraph in the same plane is high
Frequency structure 212 and second segment high-frequency structure 211.The THz wave outlet of first paragraph high-frequency structure 212 is connected to second segment high frequency
The entrance of structure 211.
Each part in mould cascade high-frequency structure bielectron note terahertz emission source is crossed to the present embodiment individually below
It is described in detail.
Bielectron note electron gun includes first paragraph bielectron note electron gun and second segment bielectron note electron gun；Described first
Section bielectron note electron gun includes：The first negative electrode of first paragraph 201, the second negative electrode of first paragraph 202, first paragraph electronics note collector
213, the negative electrode of the first paragraph electronics note collector 213 face first paragraph bielectron note electron gun is set, and is formed between the two
First paragraph Beam and wave interaction area；.
The second segment bielectron note electron gun includes：The first negative electrode of second segment 204, the second negative electrode of second segment 205, second
Section electronics note collector 210.The negative electrode of the second segment electronics note collector 210 face second segment bielectron note electron gun is set
Put, form second segment Beam and wave interaction area between the two.
The bielectron note of wherein first paragraph bielectron note electron gun is arranged for horizontal alignment, second segment bielectron note electron gun
Bielectron note also for horizontal alignment arrange.The direction of propagation phase of the bielectron note of first paragraph and second segment bielectron note electron gun
It is mutually parallel.First paragraph and second segment bielectron note electron gun bielectron note voltage it is all identical, their voltage value between
Between 10kV-25kV.Wherein, bielectron note electron gun can be by circular, ellipse, ribbon beam and carbon nano pipe array negative electrode
The twin cathode electron gun formed Deng any one cathode shape.
The magnetic field generation section part includes the first magnetic field generation section part 206 and the second magnetic field generation section part 216, sets respectively
In first paragraph Beam and wave interaction area and the both sides in second segment Beam and wave interaction area, for producing perpendicular to the double electricity of the first paragraph
The magnetic field of son note and second segment bielectron note transmission direction；The magnetic field generation section part is the one of which of following form：Permanent magnetism
Body, periodicity permanent magnet focusing system, electromagnetic focusing system and electrostatic focusing system.In the present embodiment, the production of the first and second magnetic fields
206 and 216 preferably circular permanent magnet of raw part, is arranged at first paragraph Beam and wave interaction area and second segment Beam and wave interaction area
Both sides, its produce perpendicular to electronics note transmission direction magnetic field.
Under the introduction by magnetic field, the He of bielectron note 214 of two emission of cathodes of electron gun is noted by first paragraph bielectron
215, interact in first paragraph high-frequency structure 212 with the THz wave of input, then received by first paragraph electronics note collector
Collection；The bielectron note 208 and 209 launched by two negative electrodes 204 and 205 of second segment, in second segment high-frequency structure 211 and too
Interaction occurs for Hertz wave, is then collected by second segment electronics note collector 210.
In addition, in the present invention, magnetic field generation section part can also use periodicity permanent magnet focusing system, electromagnetic focusing system and
The forms such as electrostatic focusing system.
The cascade high-frequency structure includes first paragraph high-frequency structure 212 and second segment high-frequency structure 211；The first paragraph is high
The delivery outlet of frequency structure 212 is connected to the input port of second segment high-frequency structure 211 by cascade structure, and the cascade structure is：
It is directly connected to structure, gradual change shape structure or step structure.
First paragraph high-frequency structure 212 is periodic structure, positioned at first paragraph bielectron note electron gun two negative electrodes 201,
First paragraph Beam and wave interaction area between 202 and first paragraph electronics note collector 213.It is defeated in first paragraph high-frequency structure 212
The THz wave entered interacts with bielectron note 214,215 caused by two negative electrodes of first paragraph bielectron note electron gun, too
Hertz wave obtains power amplification and frequency bandspread, and the bielectron note 214,215 after first paragraph Beam and wave interaction is by first paragraph electronics
Note collector 213 is captured.
First paragraph high-frequency structure 212 includes two-stage structure, and its input port receives input terahertz signal, and delivery outlet is connected to
Second segment high frequency interfaces 211, wherein：First paragraph is clustering section, in the presence of the terahertz signal of input, for from first
Bielectron note 214,215 caused by section bielectron note negative electrode 201,202 carries out clustering and produces clustering electron beam group, and second segment is mutual
Acting section, the THz wave pass through itself and caused clustering electron beam group and interacted so that THz wave power amplification and
Frequency bandspread, the THz wave after amplification are output to second segment high-frequency structure 211.
First paragraph and second segment high-frequency structure in first paragraph high-frequency structure 212 are folded waveguide slow-wave structure, can also
For periodic, coupler, helix etc..
Second segment high-frequency structure 211 is periodic structure, positioned at two negative electrodes 204,205 and second segment electronics of second segment
Note the second segment Beam and wave interaction area between collector 210.In second segment high-frequency structure 211, the THz wave of input and
Two sections of bielectron note 208,209 interacts, and THz wave further obtains power amplification and frequency bandspread, and second segment note-
Bielectron note 208,209 after ripple interaction is captured by second segment electronics note collector 210.
Second segment high-frequency structure 211 includes two-stage structure, and its input port is connected to first paragraph high-frequency structure 212, delivery outlet
For exporting terahertz signal, wherein：First paragraph is clustering section, in the presence of the terahertz signal of input, for from
Bielectron note 208,209 caused by two sections of bielectron note negative electrodes 204,205 carries out clustering and produces clustering electron beam group, and second segment is
Interaction section, the THz wave are rolled into a ball with clustering electron beam and interacted in the second segment of second segment high-frequency structure 211 so that
The further power amplification of THz wave and frequency bandspread, terahertz signal are exported from ripple and exported.
First paragraph and second segment high-frequency structure in the high-frequency structure 211 of second segment Beam and wave interaction is slow for folded waveguide
Wave structure, or periodic, coupler, helix etc..The second segment high-frequency structure takes in the following manner wherein
One of output：Uniformly output, grading structure output or antenna output.
Connected between first paragraph high-frequency structure 211 and second segment high-frequency structure 212 by straight wave guide section, the straight wave guide section
Upper filling attenuating material, the THz wave power of clustering section is absorbed, while prevent end reflection ripple from entering clustering section
Cause backward wave oscillation.
Fig. 3 is the TE in the embodiment of the present invention20Mould bielectron notes the dispersion curve figure of folded waveguide.As seen from Figure 3,
Realized in the device and bielectron note is introduced in folded waveguide, and input higher modes TE20Mould, realize amplification output.
The present embodiment cascaded mould folded waveguide travelling-wave amplifier bielectron note terahertz emission source realize it is high-power,
The output of broadband terahertz signal, and be easy to process, so as to be advantageously implemented the tight of miniature Terahertz vacuum electron device
Gathering and integrated, also, by cascading high-frequency structure, shorten Beam and wave interaction distance, reduce electron-optical system
Difficulty is developed, alleviates magnetic field weight.
So far, the present embodiment is described in detail combined accompanying drawing.According to above description, those skilled in the art
There should be clear understanding to terahertz radiation source of the present invention.
In addition, the above-mentioned definition to each element is not limited in the various concrete structures mentioned in embodiment or shape,
One of ordinary skill in the art can replace while it is simply known.
In summary, the present invention provides a kind of bielectron note terahertz emission for cascading mould folded waveguide travelling-wave amplifier
Source.The terahertz radiation source is using bielectron note driving, input higher modes TE20Mould carries out interaction, and using cascade
The form of amplifier, makes THz wave further be exaggerated.In same THz source, high-power, broadband is realized too
The output of hertz signal, and be easy to process, be advantageous to terahertz radiation source in anti-interference, harmful substance detection, ultra wide band thunder
Up to the application of long-range detection and high-resolution imaging radar etc..
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., it should be included in the guarantor of the present invention
Within the scope of shield.
Claims (3)
- A kind of 1. bielectron note terahertz emission source for cascading mode structure, it is characterised in that including：Bielectron notes electron gun, including：First paragraph bielectron notes electron gun and second segment bielectron note electron gun, produces the respectively One bielectron is noted and the second bielectron note；The first paragraph bielectron note electron gun includes：The negative electrode of first paragraph first, first paragraph Two negative electrodes, first paragraph electronics note collector, the negative electrode of first paragraph first and first described in the first paragraph electronics note collector face The second negative electrode of section is set, and forms first paragraph Beam and wave interaction area；The second segment bielectron note electron gun includes：Second segment One negative electrode, the negative electrode of second segment second, second segment electronics note collector；The second segment electronics note collector face second segment first Negative electrode and the second negative electrode are set, and form second segment Beam and wave interaction area；Wherein, the first paragraph Beam and wave interaction area and second Section Beam and wave interaction area is arranged side by side；Magnetic field generation section part, including：First magnetic field generation section part and the second magnetic field generation section part, are arranged at first be arranged side by side Section Beam and wave interaction area and the both sides in second segment Beam and wave interaction area, for producing the magnetic perpendicular to electronics note transmission direction ；High-frequency structure is cascaded, including：First paragraph high-frequency structure and second segment high-frequency structure, cascade high-frequency structure use TE20Mould As mode of operation, respectively positioned at the first paragraph Beam and wave interaction area and second segment Beam and wave interaction area；The terahertz of input Hereby signal is under magnetic fields caused by the magnetic field generation section part, in the first paragraph high-frequency structure with first pair of electricity Son note interaction, the terahertz signal after effect are exported to second segment high-frequency structure；Input to second segment high-frequency structure too Hertz signal after second bielectron note interaction, exports in the presence of the magnetic field from second segment high-frequency structure.
- 2. bielectron note terahertz emission source according to claim 1, in high-frequency structure, bielectron note and TE20Mould phase Interaction, it is characterised in that the delivery outlet of the first paragraph high-frequency structure is connected to second segment high-frequency structure by cascade structure, The cascade structure is：It is directly connected to structure or gradual change shape structure；The first paragraph high-frequency structure includes：Clustering section and interaction section；In the presence of THz wave, the first paragraph high frequency The clustering section of structure, which is used to note the first bielectron, carries out clustering generation clustering electron beam group；The group of the first paragraph high-frequency structure Clustering electron beam group is interacted in interaction section with the THz wave caused by poly- section, and work(is carried out to the THz wave Exported after rate amplification；The first paragraph high-frequency structure is connected to second segment high-frequency structure by straight wave guide section, and the straight wave guide section is filled with decay Material, for being absorbed to the THz wave power of clustering section, while prevent end reflection ripple from entering clustering section and causing group Poly- disorder；The second segment high-frequency structure includes：Clustering section and interaction section；In the presence of THz wave, the second segment high frequency The clustering section of structure, which is used to note the second bielectron, carries out clustering generation clustering electron beam group；The group of the second segment high-frequency structure Clustering electron beam group is interacted in interaction section with the THz wave caused by poly- section, and work(is carried out to the THz wave Exported after rate amplification.
- 3. the bielectron note terahertz emission source as described in any one of claim 1 to 2, it is characterised in that first pair of electricity Son note is parallel with the direction of propagation of the second bielectron note.
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| CN105938972B (en) * | 2016-07-01 | 2019-04-26 | 中国科学技术大学 | A kind of Terahertz free-electron laser source based on bielectron note double grating |
| CN106935456B (en) * | 2017-04-25 | 2019-01-15 | 中国电子科技集团公司第十二研究所 | A kind of helix TWT based on segmentation tandem slow wave system |
| CN109599316B (en) * | 2017-09-30 | 2020-09-08 | 中国人民解放军国防科技大学 | X-waveband high-gain high-efficiency triaxial relativistic klystron amplifier |
| CN108335958B (en) * | 2018-02-07 | 2019-10-29 | 电子科技大学 | A kind of double note slow-wave structures of winding waveguide of photonic crystal load |
| CN109887820B (en) * | 2019-03-15 | 2021-03-02 | 电子科技大学 | Folded waveguide forward wave-return wave feedback type terahertz radiation source |
| CN110416041B (en) * | 2019-06-21 | 2020-11-20 | 中国科学院电子学研究所 | Embedded double-electron-beam terahertz backward wave oscillator |
| CN110491752B (en) * | 2019-07-23 | 2021-01-26 | 电子科技大学 | Multi-electron-beam diffraction radiation oscillator |
| CN113889390B (en) * | 2020-07-02 | 2024-08-30 | 中国科学院空天信息创新研究院 | Double-injection plane terahertz gyrotron |
| CN113035672B (en) * | 2021-03-05 | 2021-11-23 | 电子科技大学 | Double-electron-beam expansion interaction circuit based on gap high-order mode |
| CN114975040B (en) * | 2022-04-29 | 2024-08-20 | 电子科技大学 | Bidirectional multi-injection multi-cavity cascade amplifier based on cold cathode |
| CN114823252B (en) * | 2022-04-29 | 2023-07-14 | 电子科技大学 | Bidirectional multi-beam traveling wave cascade amplifier based on cold cathode |
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| CN103632910A (en) * | 2013-07-10 | 2014-03-12 | 中国科学院电子学研究所 | Terahertz source amplifying device based on multiple-cascade high-frequency structure |
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