CN105845655A - Method for performing ball welding on micro pad in superposing manner and micro pad superposed bonding structure - Google Patents

Method for performing ball welding on micro pad in superposing manner and micro pad superposed bonding structure Download PDF

Info

Publication number
CN105845655A
CN105845655A CN201610172241.3A CN201610172241A CN105845655A CN 105845655 A CN105845655 A CN 105845655A CN 201610172241 A CN201610172241 A CN 201610172241A CN 105845655 A CN105845655 A CN 105845655A
Authority
CN
China
Prior art keywords
bonding
wire
lead
superposition
microbonding dish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610172241.3A
Other languages
Chinese (zh)
Other versions
CN105845655B (en
Inventor
罗建强
王辉
文泽海
伍艺龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 2 Research Institute
Southwest China Research Institute Electronic Equipment
Original Assignee
CETC 2 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 2 Research Institute filed Critical CETC 2 Research Institute
Priority to CN201610172241.3A priority Critical patent/CN105845655B/en
Publication of CN105845655A publication Critical patent/CN105845655A/en
Application granted granted Critical
Publication of CN105845655B publication Critical patent/CN105845655B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/4814—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate the wire connector connecting to a bonding area protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48484—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side
    • H01L2224/48488—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball
    • H01L2224/48489—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4941—Connecting portions the connecting portions being stacked
    • H01L2224/4942—Ball bonds
    • H01L2224/49421—Ball bonds on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4941—Connecting portions the connecting portions being stacked
    • H01L2224/49425—Wedge bonds
    • H01L2224/49426—Wedge bonds on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92127—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a wire connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

The invention discloses a method for performing ball welding on a micro pad in a superposing manner and a micro pad superposed bonding structure. The method comprises the following steps of singly planting a ball on the micro pad of a second substrate, obtaining a micro pad which comprises the welding ball; bonding a first lead wire in a common bonding mode, using the welding ball on the micro welding pad as a second bonding point of the first lead wire and bonding one end of the first lead wire with the second bonding point of the first lead wire; bonding a second lead wire in a common bonding mode, using the second bonding point of the first lead wire as the second boding point of the second lead wire and bonding one end of the second lead wire on the second bonding point of the first lead wire above the welding ball in the superposing manner; and repeating operation until the final lead is superposed in the superposing manner. The first bonding point of each lead is arranged on the micro pad of the first substrate and furthermore the first bonding point is independent bonding, and furthermore the number of lead wires is at least two and does not exceed ten. The micro pad superposed bonding structure is prepared according to a method of performing ball welding on the micro pad.

Description

On microbonding dish, superposition carries out method and the microbonding dish superposition bonding structure of ball-shaped welded
Technical field
The present invention relates to microelectronics technology, more particularly, relate to a kind of use pellet bonding machine at microbonding dish Upper superposition is bonded method and the bonding structure of at least 2 lead-in wires.
Background technology
The pad of semiconductor device chip is more and more less, and pad single side size is decreased to 30 by 100 microns Below Wei meter, also referred to as microbonding dish.Additionally, at the semiconductor device of the high frequency assembly such as millimeter wave, microwave In interconnection field, the Yin Duogen more single pin interconnection of lead-in wire is bonded with the advantages such as reduction stray inductance, is partly leading Body device interconnection must at least be bonded 2 lead-in wires.At present, it is common to use manual wedge bonding machine realizes single pad Bonding/or superposition 2 pin configurations of bonding realize function above the most side by side.
Common lead-in wire ball bonding bonding technology relatively wedge shape weldering bonding technology bonding efficiency, reliability are high, at bonding The wide scope of single wire aspect uses.Its common key syntype be the first solder joint be ball bonding, the diameter of soldered ball For 2 to 5 times of line footpath, the second solder joint is fish tail shape.
Therefore, the continuous reduction of pad size makes to use ball bond and technique to realize key while of on single pad The bonding structure being bonded to few two lead-in wires is a difficult problem and huge challenge.
Summary of the invention
In order to solve problems of the prior art, it is an object of the invention to provide a kind of use pellet bonding machine real On microbonding dish, superposition is bonded method and the superposition bonding structure of at least 2 lead-in wires now.
The invention provides a kind of method that on microbonding dish, superposition carries out ball-shaped welded, described method includes following Step:
A, on the microbonding dish of the second base material, individually plant ball, it is thus achieved that include the microbonding dish of soldered ball；
B, with common key syntype bonding the first lead-in wire, wherein, using the soldered ball on described microbonding dish as the One end that first goes between also is bonded in the described first the second bonding point gone between by one the second bonding point gone between On；
C, use common key syntype bonding the second lead-in wire, wherein, by the second bonding point of described first lead-in wire As the second bonding point of the second lead-in wire and one end superposition that second goes between to be bonded in above described soldered ball the On second bonding point of one lead-in wire；
D, repetitive operation are until completing the superposition bonding of last root lead-in wire；
Wherein, the first bonding point of each lead-in wire is positioned on the microbonding dish of the first base material and described first bonding point For independent bonding, the quantity of lead-in wire is at least two and is less than ten.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, described method It is additionally included on the first bonding point of last root lead-in wire and carries out protecting the step planting ball.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, uses manually Pellet bonding machine or full-automatic pellet bonding machine carry out planting ball and wire bonding.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, described independence It is bonded by welding single wire or the lead-in wire realization of many of Combination Welding on single microbonding dish.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, described commonly Bonding pattern is to burn till spherical by ultrasonic method by one end of lead-in wire, by chopper by the one of described lead-in wire At the first bonding point on the microbonding dish of the first base material that side pressure is combined in heating and form the first solder joint, described One solder joint is spherical bonding；Move chopper afterwards to above the microbonding dish of the second base material, by ultrasonic thermocompression At the second bonding point that the other end of lead-in wire is bonded on the microbonding dish of the second base material by method and the formation that fractures Second solder joint, described second solder joint is fish tail shape bonding.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, and described first Base material or the second base material are semiconductor device, ceramic circuit board or organic substrate.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, described microbonding The single side size of dish is below 200 microns.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, described lead-in wire For diameter copper lead-in wire, gold wire, aluminum lead or silver wire below 80 microns.
On microbonding dish according to the present invention, superposition carries out an embodiment of the method for ball-shaped welded, described soldered ball Or 2～5 times of the diameter of a diameter of lead-in wire of protection soldered ball.
Another aspect provides a kind of microbonding dish superposition bonding structure, described microbonding dish superposition is bonded The method that structure uses superposition on above-mentioned microbonding dish to carry out ball-shaped welded prepares.
Compared with prior art, on the microbonding dish of the present invention, superposition carries out the method for ball-shaped welded and microbonding dish is folded Adding bonding structure utilizes pellet bonding machine to realize at least 2 lead-in wires of superposition bonding on microbonding dish, and is planted by protection The bonding point that many lead-in wires are sequentially overlapped protected by ball, improves the reliability of single pad stitch welding；Additionally, it is logical Cross this bonding structure, the microbonding dish of identical function can be merged, reduce micro-number of pads of input and output, can Reduce die size further；The destructive testing of the superposition bonding structure that the present invention prepares is full Foot GJB 548B-2005 " microelectronic component Test Methods And Procedures " method 2011.1 bond strength standard.
Accompanying drawing explanation
Fig. 1 show according in example 1 of the present invention on semiconductor chip microbonding dish superposition carry out ball-shaped welded The top view of the microbonding dish superposition bonding structure of the superposition obtained two lead-in wire.
Fig. 2 show according in example 1 of the present invention on semiconductor chip microbonding dish superposition carry out ball-shaped welded The side view of the microbonding dish superposition bonding structure of the superposition obtained two lead-in wire.
Description of reference numerals:
1-semiconductor chip, 2-substrate circuit sheet, 3-include the microbonding dish of soldered ball, 4-first go between, 5-second Ball is planted in lead-in wire, 6-protection.
Detailed description of the invention
All features disclosed in this specification, or disclosed all methods or during step, except mutually Beyond the feature repelled mutually and/or step, all can combine by any way.
Any feature disclosed in this specification (including any accessory claim, summary and accompanying drawing), removes Non-specifically describes, all can be by other equivalences or have the alternative features of similar purpose and replaced.That is, unless Narration especially, each feature is an example in a series of equivalence or similar characteristics.
Below superposition on the microbonding dish to the present invention is carried out method and the microbonding dish superposition bonding of ball-shaped welded Structure is described in detail.
According to the exemplary embodiment of the present invention, on described microbonding dish, superposition carries out the method for ball-shaped welded and includes The most multiple steps.
Step A:
The microbonding dish of the second base material is individually planted ball, it is thus achieved that include the microbonding dish of soldered ball.
Wherein it is possible to use manual pellet bonding machine or full-automatic pellet bonding machine to carry out planting ball.
Second base material can be semiconductor device (such as Si base, GaAs base, GaN base etc.), ceramic circuit Substrate (such as thin-film ceramics circuit, thick film ceramic circuit, LTCC etc.) or organic substrate are (such as PCB, print Circuit processed, plastic basis material etc.) etc. any base material, and microbonding dish thereon can be based on any of the above described base material system For obtaining.
The purpose carrying out planting ball in advance on microbonding dish is to protect the second base material (such as semiconductor element) no Damaged and increase bonding pad area.And use automatic ball welding machine that this step automatization can be made to carry out, have very The strong popularization suitability.
Step B:
With common key syntype bonding the first lead-in wire, wherein, the soldered ball on described microbonding dish is drawn as first One end that first goes between also is bonded on the second bonding point of described first lead-in wire by the second bonding point of line.
Wherein, the second bonding point is the concept for the first bonding point, and the second bonding point is index wire With the position of the second base material solder bonds, the first bonding point is index wire and the position of the first base material solder bonds Put.Specifically, can directly one end that first goes between be bonded on the soldered ball on microbonding dish.
When carrying out wire bonding, manual pellet bonding machine or full-automatic pellet bonding machine similarly can be used to carry out.
Step C:
With common key syntype bonding second lead-in wire, wherein, using described first lead-in wire the second bonding point as One end superposition that second goes between also is bonded in above described soldered ball first and draws by the second bonding point of the second lead-in wire On second bonding point of line.
Owing to the present invention needs superposition on microbonding dish to be bonded many lead-in wires, it is therefore desirable to the optimum of selective stacking Mode also ensures the intensity being bonded.In accordance with the present invention it is preferred that the second bonding point directly gone between first is made It is the second bonding point of the second lead-in wire, draws such that it is able to directly one end superposition that second goes between is bonded to first On second bonding point of line, it is achieved in two lead-in wires effective superposition bonding on microbonding dish.
Step D:
Repetitive operation is until completing the superposition bonding of last root lead-in wire.Wherein, the quantity of lead-in wire is at least two Root and less than ten.
According to the present invention, the first bonding point of the respectively lead-in wire such as above-mentioned first lead-in wire, the second lead-in wire is positioned at the first base On the microbonding dish of material and described first bonding point is independent bonding.As it has been described above, the first bonding point is to guide Line and the position of the first base material solder bonds, by lead-in wire two ends respectively with the first base material and the weldering of the second base material Connect bonding, thus realize the information mutual communication between such as electric interconnection or chip between chip and substrate.Tool Body ground, above-mentioned independent bonding can be drawn by welding single wire or many of Combination Welding on single microbonding dish Line realizes.Second base material can also be semiconductor device (such as Si base, GaAs base, GaN base etc.), Ceramic circuit board (such as thin-film ceramics circuit, thick film ceramic circuit, LTCC etc.) or organic substrate (as PCB, printed circuit, plastic basis material etc.) etc. any base material, and microbonding dish thereon can be based on above-mentioned What base material prepares.
According to the present invention, above-mentioned common key syntype is particularly as follows: will one end of lead-in wire by ultrasonic method Burn till spherical, the first key on the microbonding dish of the first base material that by chopper, one end of lead-in wire is pressed together on heating At chalaza and form the first solder joint, this first solder joint is spherical bonding；Move chopper afterwards to the second base material Above microbonding dish, by the method for ultrasonic thermocompression, the other end of lead-in wire is bonded on the microbonding dish of the second base material The second bonding point at and fracture formation the second solder joint, this second solder joint be fish tail shape bonding.That is, at this In invention, by ultrasonic method, one end that first goes between is burnt till spherical, gone between first by chopper One end is pressed together on a microbonding dish of the first base material of heating and forms the first solder joint, and this first solder joint is ball Shape is bonded, and wherein, the first solder joint is shape after the first bonding point being welded in the first base material by the first lead-in wire Become；Afterwards, above mobile chopper to the microbonding dish of the second base material, by the method for ultrasonic thermocompression by first The other end of lead-in wire is bonded in formation second solder joint that includes on the microbonding dish of soldered ball and fracture of the second base material, should Second solder joint is fish tail shape bonding, and wherein, the second solder joint is the bag being welded in the second base material that goes between first Formed after including the second bonding point on the microbonding dish of soldered ball.Also it is so operation for the second lead-in wire, only It is as the second bonding point of the second lead-in wire and by second one end gone between using the first the second bonding point gone between Superposition is bonded in above soldered ball and can realize superposition welding on the second bonding point of the first lead-in wire, by that analogy, The superposition realizing many lead-in wires is bonded and obtains microbonding dish superposition bonding structure.
Carry out protecting planting ball it is highly preferred that this method is additionally included on the first bonding point of last root lead-in wire Step, thus obtain the microbonding dish superposition bonding structure including protecting soldered ball.It is true that protection to plant ball permissible Play the effect of the reliability increasing superposition bonding structure and protect many stitch welding lead solder-joint, and then realizing The structure of many of stitch welding lead-in wire on microbonding dish, even if it is true that unprotect plants ball also is able to realize the present invention's Basic superposition bonding structure.
Single side size according to the microbonding dish on the exemplary embodiment of the present invention, the first base material or the second base material Below 200 microns, such as, can be 30,50,80,120,200 microns of equidimensions.Further, draw Line can be any metal lead wires such as copper lead-in wire, gold wire, aluminum lead or silver wire, and the diameter gone between Below 80 microns, such as, can be 12,18,25,40,80 microns of equidimensions.Additionally, soldered ball or 2～5 times of the diameter of a diameter of lead-in wire of protection soldered ball, such as, draw for conventional a diameter of 25 microns Line, the diameter of its soldered ball or protection soldered ball can be 60 microns.
That is, use said method superposition can be bonded at least two lead-in wires on the microbonding dish of semiconductor device And obtaining microbonding dish superposition bonding structure, the microbonding dish superposition bonding structure of the present invention is then that employing is above-mentioned micro- On pad, superposition carries out the method for ball-shaped welded and prepares.The destructive testing of this superposition bonding structure meets GJB 548B-2005 " microelectronic component Test Methods And Procedures " method 2011.1 bond strength standard.
Below in conjunction with concrete example, the invention will be further described.
Example 1:
Fig. 1 show according in example 1 of the present invention on semiconductor chip microbonding dish superposition carry out ball-shaped welded The top view of the microbonding dish superposition bonding structure of the superposition obtained two lead-in wire, Fig. 2 shows according to the present invention In example 1, on semiconductor chip microbonding dish, superposition carries out the microbonding of superposition two lead-in wire that ball-shaped welded obtains The side view of dish superposition bonding structure.
As depicted in figs. 1 and 2, first ball is individually planted on the microbonding dish on semiconductor chip 1, it is thus achieved that bag Include the microbonding dish 3 of soldered ball；Use common key syntype bonding the first lead-in wire 4, wherein, by the first lead-in wire 4 One end be bonded to as first lead-in wire 4 the second bonding point soldered ball on, wherein, microbonding dish plants ball and key Two steps closing the first lead-in wire can directly use Pre-Wire pattern to realize in automatic ball welding machine；Then Same common key syntype bonding the second lead-in wire that uses, wherein, is bonded to one end superposition of the second lead-in wire 5 As second lead-in wire 5 the second bonding point first lead-in wire 4 the second bonding point on；Owing to only two are drawn Line, so directly carrying out protection above the second bonding point of the second lead-in wire 5 to plant ball, it is thus achieved that ball 6 is planted in protection, And then obtain microbonding dish superposition bonding structure.Wherein, bonding second goes between and carries out protecting two steps planting ball Suddenly Post-Wire pattern can be directly used to realize in automatic ball welding machine.Further, the first lead-in wire 4 and the First bonding point of two lead-in wires 5 is arranged on substrate circuit sheet 2, and by respectively at substrate circuit sheet Weld single wire on single microbonding dish on 2 and realize independent spherical bonding.
In sum, on the microbonding dish of the present invention, superposition carries out method and the microbonding dish superposition bonding of ball-shaped welded Structure utilizes pellet bonding machine to realize at least 2 lead-in wires of superposition bonding on solder pad of semiconductor device, and by protection Plant the bonding point that ball protects many lead-in wires to be sequentially overlapped, improve the reliability of single pad stitch welding；Additionally, By this bonding structure, the microbonding dish of identical function can be merged, reduce micro-number of pads of input and output, Die size can be reduced further；The destructive testing of the superposition bonding structure that the present invention prepares Meet GJB 548B-2005 " microelectronic component Test Methods And Procedures " method 2011.1 bond strength standard.
The invention is not limited in aforesaid detailed description of the invention.The present invention expand to any in this manual Disclose new feature or any new combination, and disclose arbitrary new method or the step of process or any New combination.

Claims (10)

1. the method that on a microbonding dish, superposition carries out ball-shaped welded, it is characterised in that described method includes Following steps:
A, on the microbonding dish of the second base material, individually plant ball, it is thus achieved that include the microbonding dish of soldered ball；
B, with common key syntype bonding the first lead-in wire, wherein, using the soldered ball on described microbonding dish as the One end that first goes between also is bonded in the described first the second bonding point gone between by one the second bonding point gone between On；
C, use common key syntype bonding the second lead-in wire, wherein, by the second bonding point of described first lead-in wire As the second bonding point of the second lead-in wire and one end superposition that second goes between to be bonded in above described soldered ball the On second bonding point of one lead-in wire；
D, repetitive operation are until completing the superposition bonding of last root lead-in wire；
Wherein, the first bonding point of each lead-in wire is positioned on the microbonding dish of the first base material and described first bonding point For independent bonding, the quantity of lead-in wire is at least two and is less than ten.
The method that on microbonding dish the most according to claim 1, superposition carries out ball-shaped welded, its feature exists In, described method is additionally included on the second bonding point of last root lead-in wire and carries out protecting the step planting ball.
The method that on microbonding dish the most according to claim 1 and 2, superposition carries out ball-shaped welded, it is special Levy and be, use manual pellet bonding machine or full-automatic pellet bonding machine to carry out planting ball and wire bonding.
The method that on microbonding dish the most according to claim 1, superposition carries out ball-shaped welded, its feature exists In, described independent bonding is real by welding single wire or many of Combination Welding lead-in wire on single microbonding dish Existing.
The method that on microbonding dish the most according to claim 1, superposition carries out ball-shaped welded, its feature exists In, described common key syntype is to burn till spherical by ultrasonic method by one end of lead-in wire, will by chopper At the first bonding point on the microbonding dish of the first base material that one end of described lead-in wire is pressed together on heating and form One solder joint, described first solder joint is spherical bonding；Move chopper afterwards to above the microbonding dish of the second base material, The second bonding other end of lead-in wire being bonded on the microbonding dish of the second base material by the method for ultrasonic thermocompression At Dian and fracture formation the second solder joint, described second solder joint be fish tail shape bonding.
6. the method carrying out ball-shaped welded according to superposition on the microbonding dish described in claim 1,4 or 5, its Being characterised by, described first base material or the second base material are semiconductor device, ceramic circuit board or organic substrate.
The method that on microbonding dish the most according to claim 1, superposition carries out ball-shaped welded, its feature exists In, the single side size of described microbonding dish is below 200 microns.
The method that on microbonding dish the most according to claim 1, superposition carries out ball-shaped welded, its feature exists In, described lead-in wire is diameter copper lead-in wire, gold wire, aluminum lead or silver wire below 80 microns.
The method that on microbonding dish the most according to claim 1 and 2, superposition carries out ball-shaped welded, it is special Levy and be, 2～5 times of the diameter of a diameter of lead-in wire of described soldered ball or protection soldered ball.
10. a microbonding dish superposition bonding structure, it is characterised in that described microbonding dish superposition bonding structure is adopted The method carrying out ball-shaped welded with superposition on the microbonding dish according to any one of claim 1 to 9 is prepared into Arrive.
CN201610172241.3A 2016-03-24 2016-03-24 Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk Active CN105845655B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610172241.3A CN105845655B (en) 2016-03-24 2016-03-24 Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610172241.3A CN105845655B (en) 2016-03-24 2016-03-24 Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk

Publications (2)

Publication Number Publication Date
CN105845655A true CN105845655A (en) 2016-08-10
CN105845655B CN105845655B (en) 2018-05-04

Family

ID=56584427

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610172241.3A Active CN105845655B (en) 2016-03-24 2016-03-24 Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk

Country Status (1)

Country Link
CN (1) CN105845655B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107170691A (en) * 2017-05-27 2017-09-15 中国电子科技集团公司第二十九研究所 A kind of method for being superimposed on microbonding disk or carrying out automatic wedge bonding side by side
CN109192848A (en) * 2018-10-10 2019-01-11 广东晶科电子股份有限公司 A kind of LED component and its wire bonding method
CN112670257A (en) * 2020-12-28 2021-04-16 颀中科技（苏州）有限公司 Chip packaging structure and chip packaging method
CN113830727A (en) * 2021-09-09 2021-12-24 中国人民解放军军事科学院国防科技创新研究院 Micro-nano part transfer method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1670935A (en) * 2004-03-18 2005-09-21 株式会社电装 Wire bonding method and semiconductor device
CN101114628A (en) * 2006-07-27 2008-01-30 富士通株式会社 Semiconductor device and manufacturing method for the same
CN103035546A (en) * 2012-12-18 2013-04-10 可天士半导体（沈阳）有限公司 Small-size bonding point double-line bonding method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1670935A (en) * 2004-03-18 2005-09-21 株式会社电装 Wire bonding method and semiconductor device
US20050205995A1 (en) * 2004-03-18 2005-09-22 Denso Corporation Wire bonding method and semiconductor device
CN101114628A (en) * 2006-07-27 2008-01-30 富士通株式会社 Semiconductor device and manufacturing method for the same
CN103035546A (en) * 2012-12-18 2013-04-10 可天士半导体（沈阳）有限公司 Small-size bonding point double-line bonding method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107170691A (en) * 2017-05-27 2017-09-15 中国电子科技集团公司第二十九研究所 A kind of method for being superimposed on microbonding disk or carrying out automatic wedge bonding side by side
CN107170691B (en) * 2017-05-27 2019-07-16 中国电子科技集团公司第二十九研究所 A kind of method for being superimposed on microbonding disk or carrying out automatic wedge bonding side by side
CN109192848A (en) * 2018-10-10 2019-01-11 广东晶科电子股份有限公司 A kind of LED component and its wire bonding method
CN109192848B (en) * 2018-10-10 2024-02-20 广东晶科电子股份有限公司 LED device and wire bonding method thereof
CN112670257A (en) * 2020-12-28 2021-04-16 颀中科技（苏州）有限公司 Chip packaging structure and chip packaging method
CN113830727A (en) * 2021-09-09 2021-12-24 中国人民解放军军事科学院国防科技创新研究院 Micro-nano part transfer method
CN113830727B (en) * 2021-09-09 2024-05-24 中国人民解放军军事科学院国防科技创新研究院 Transfer method of micro-nano piece

Also Published As

Publication number Publication date
CN105845655B (en) 2018-05-04

Similar Documents

Publication Publication Date Title
CN107170691B (en) A kind of method for being superimposed on microbonding disk or carrying out automatic wedge bonding side by side
US8816514B2 (en) Microelectronic assembly with joined bond elements having lowered inductance
TW560032B (en) Lead frame, method for manufacturing the same, resin-encapsulated semiconductor device and method for manufacturing the same
CN105845655A (en) Method for performing ball welding on micro pad in superposing manner and micro pad superposed bonding structure
KR101286874B1 (en) A semiconductor device and a method of manufacturing the same
US8802554B2 (en) Patterns of passivation material on bond pads and methods of manufacture thereof
JPH08510358A (en) Interconnection of integrated circuit chips and substrates
JP2007535820A (en) Low loop wire bonding systems and methods
CN108231603A (en) The preparation method and chip packing-body of a kind of chip packing-body
JP2008277751A (en) Method of manufacturing semiconductor device, and semiconductor device
US6400034B1 (en) Semiconductor device
CN103035628B (en) There is the device of wirelessly activating functional block
TWI528516B (en) Chip assembly and chip assembling method
US20110147928A1 (en) Microelectronic assembly with bond elements having lowered inductance
US20100129962A1 (en) Electronic package structure and method
JP3887993B2 (en) Connection method between IC chip and circuit board
US20110018135A1 (en) Method of electrically connecting a wire to a pad of an integrated circuit chip and electronic device
CN107017221B (en) Integrated circuit assembly
JP2007088220A (en) Manufacturing method of semiconductor device
JP2007073763A (en) Semiconductor device and its manufacturing method
CN112652549A (en) Vertical routing equipment and routing method
WO2022018961A1 (en) Semiconductor device, and method for manufacturing same
JP5971886B2 (en) Ball, bump bonding ribbon, wire wiring and method for connecting an integrated circuit to a substrate
CN103219244A (en) Substrate process, packaging method, package and system-in-package structure of semiconductor
JP3855532B2 (en) Connection method between IC chip and circuit board

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Luo Jianqiang

Inventor after: Pan Yuhua

Inventor after: Wang Hui

Inventor after: Wen Zehai

Inventor after: Wu Yilong

Inventor before: Luo Jianqiang

Inventor before: Wang Hui

Inventor before: Wen Zehai

Inventor before: Wu Yilong

CB03 Change of inventor or designer information
GR01 Patent grant
GR01 Patent grant