CN109192848A - A kind of LED component and its wire bonding method - Google Patents
A kind of LED component and its wire bonding method Download PDFInfo
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- CN109192848A CN109192848A CN201811180957.3A CN201811180957A CN109192848A CN 109192848 A CN109192848 A CN 109192848A CN 201811180957 A CN201811180957 A CN 201811180957A CN 109192848 A CN109192848 A CN 109192848A
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- 230000008569 process Effects 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
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- 230000009471 action Effects 0.000 description 2
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- 239000000853 adhesive Substances 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED components, comprising: carrier, the LED chip on carrier and the lead for connecting LED chip and the carrier；The electrode of LED chip is bonded connection with one end of lead, forms the first bonding point；Carrier is bonded connection with the other end of lead, forms the second bonding point；The first soldered ball is laminated on the first bonding point, so that the first bonding point and the first soldered ball collectively form the first solder joint；Lead draws to the second bonding point from the first solder joint and forms a break, and the angle at break is right angle or obtuse angle, so that the distance between break and LED chip top surface are less than 90 μm.LED component of the invention can effectively increase the intensity of the first bonding point, and realize the ultralow bank of wire bonding cabling.The present invention also provides a kind of wire bonding methods of LED component.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of LED component and its wire bonding methods.
Background technique
It substantially will be on the electrode and carrier of LED chip using wire bonding mode in existing LED component packaging technology
Weld pad is attached.Wire bonding mode includes ball bond mode and wedge bonding mode, wherein ball bond mode is first
Lead is inserted perpendicularly into capillary, is directed at capillary with packaging pin, and is being drawn by electric arc sparking method
Line tail end formed it is spherical, then control capillary decline, contact ball bumps with an electrode of LED chip, Jin Er
It is combined ball bumps and the electrode under the action of pressure and heat, forms the first bonding point；Next, control capillary
Chopper rises, and moves capillary along scheduled track, extracts lead from capillary to carry out arc routing out,
When capillary pipe cutting knife is moved to corresponding weld pad, lead is heated again by electric arc sparking method so that lead is at this
Wedge-shaped impression is formed on weld pad, is then controlled capillary and is risen, and the clamping when capillary rises to predetermined altitude
Lead, when capillary continues to rise, lead is pulled off in most thin place.
Since the first bonding point is formed under high temperature action, the lead and electrode material of weld seam two sides can occur obviously
Tissue and performance change form heat affected area so that the first bonding point brittleness is high, the first bonding point is caused to be easy cracking.In order to
The reliability for increasing the first bonding point in LED component, in existing ball bond mode after forming the first bonding point, it will usually
Will capillary rise at least 90 μm of height after move again, so that LED component is when being impacted or LED device
When the packing colloid of part expands with heat and contract with cold, because the lead right above the first bonding point has certain toughness, buffering can be played
Effect.However, for the light emission luminance for increasing LED chip, LED chip shines as the brightness requirement of LED component is constantly promoted
Thickness degree gradually increases, and the thickness of the phosphor powder layer of LED component need to gradually be thinned, this results in existing wire bonding mode
It is not able to satisfy the brightness requirement of LED component.
Summary of the invention
In view of the above-mentioned problems, a kind of LED component of the invention and its wire bonding method, can effectively increase the first bonding point
Intensity, and realize wire bonding cabling ultralow bank so that the thickness of LED component can be prepared into it is thinner, meet
The brightness requirement of LED component.
In order to solve the above technical problems, a kind of LED component of the invention, comprising: carrier, the LED being located on the carrier
The lead of chip and the connection LED chip and the carrier；Wherein,
The electrode of the LED chip is bonded connection with one end of the lead, forms the first bonding point；The carrier and institute
The other end bonding connection for stating lead, forms the second bonding point；
It is laminated with the first soldered ball on first bonding point, so that first bonding point and first soldered ball are common
Constitute the first solder joint；
The lead draws to second bonding point from first solder joint and forms a break, at the break
Angle is right angle or obtuse angle, so that the distance between the break and the LED chip top surface are less than 90 μm.
Compared with prior art, it is laminated with the first soldered ball on first bonding point of LED chip in LED component of the invention,
So that the electrode surface of LED chip stacks gradually soldered ball, lead and soldered ball from the bottom to top, i.e. the first bonding point and the first soldered ball exist
The electrode surface of LED chip collectively forms the sandwich type structural that upper and lower soldered ball presss from both sides folded lead, and the first bonding point and the first soldered ball
Collectively form the first solder joint.Since the first soldered ball is layered on the first bonding point, the heat affecting on the first bonding point can be covered
Area then promotes the first bonding point so that lead has stronger fastness and reliability with the seam crossing for being bonded connection of electrode
It is not easy to crack, to reduce the height of lead above the first solder joint；Meanwhile because lead is drawn from the first solder joint to the second bonding
The angle that point is formed at a break and the break is obtuse angle, can further decrease the height of lead above the first solder joint, make
The distance between the break and LED chip top surface are obtained less than 90 μm, the ultralow bank of wire bonding cabling is realized, LED device can be made
The thickness of part can be prepared into thinner, meet the brightness requirement of LED component.
As an improvement of the above scheme, it is formed with the second soldered ball on second bonding point, so that second bonding
Point and second soldered ball collectively form the second solder joint.
As an improvement of the above scheme, the LED chip includes formal dress type LED chip or vertical-type LED chip.
As an improvement of the above scheme, the formal dress type LED chip includes at least two；The carrier includes first conductive
Carrier and the second conductive carrier；Wherein,
At least two formal dress type LED chip is in parallel by the lead, so that forming one on each electrode
At least two second welderings are respectively formed on first solder joint, first conductive carrier and second conductive carrier
Point；
Alternatively, at least two formal dress type LED chip is connected by the lead, so that at least two formal dress type
First solder joint is formed on each electrode of LED chip, on first conductive carrier and second conductive carrier
It is respectively formed second solder joint.
As an improvement of the above scheme, the vertical-type LED chip includes at least two；The carrier has the first conduction
Carrier and the second conductive carrier；
Shown at least two vertical-types LED chip is in parallel by the lead, so that at least two vertical-types LED core
First electrode in piece is connect with first conductive carrier, the second electricity of each of described at least two vertical-types LED chip
It is formed with first solder joint on extremely, at least two second solder joints are formed on second conductive carrier.
In order to solve the above technical problems, the present invention also provides a kind of wire bonding methods of LED component, including walk as follows
It is rapid:
LED chip is fixedly installed on carrier；
Lead is carried out using ball bond technique to be bonded connection with the electrode of the LED chip, forms the first bonding point；
The lead is drawn by the electrode to the carrier, and carries out being bonded connection with the carrier, forms second
Bonding point simultaneously cuts off the lead；Wherein, the lead forms a break because drawing, and the angle at the break is obtuse angle,
So that the distance between the break and the LED chip top surface are less than 90 μm；
The first soldered ball is laminated on first bonding point by ball bond technique so that first bonding point and
First soldered ball collectively forms the first solder joint.
Compared with prior art, a kind of wire bonding method of LED component of the invention is by using ball bond technique
The first bonding point is first formed on the electrode of LED chip respectively, forms the second bonding point on carrier, then uses ball bond work
The first soldered ball is laminated in skill on the first bonding point so that the electrode surface of LED chip stack gradually from the bottom to top soldered ball, lead and
Soldered ball, i.e. the first bonding point and the first soldered ball collectively form upper and lower soldered ball in the electrode surface of LED chip and press from both sides the sandwich of folded lead
Formula structure, and the first bonding point and the first soldered ball collectively form the first solder joint.Since the first soldered ball is layered on the first bonding point,
The heat affected area on the first bonding point can be covered, so that lead is with the seam crossing for being bonded connection of electrode with stronger secured
Property and reliability, then promote the first bonding point not easy to crack, to reduce the height of lead above the first solder joint；Meanwhile because
It is obtuse angle that lead, which draws to the second bonding point the angle being formed at a break and the break from the first solder joint, can further be dropped
The height of lead above low first solder joint, so that the distance between the break and LED chip top surface less than 90 μm, realize lead key
The ultralow bank for closing cabling can make the thinner of the LED component prepared using this method, meet the brightness requirement of LED component.
As an improvement of the above scheme, be laminated on first bonding point by ball bond technique the first soldered ball it
Before, further include following steps:
The second soldered ball is laminated on second bonding point by ball bond technique, so that second bonding point and institute
It states the second soldered ball and collectively forms the second solder joint.
As an improvement of the above scheme, the LED chip includes at least two formal dress type LED chips；Described at least two
Formal dress type LED chip is connected by the lead；
At least two formal dress type LED chip is as follows on the adjacent electrode of adjacent formal dress type LED chip
Form the first solder joint:
The lead is bonded with an electrode in the adjacent electrode using the ball bond technique, is formed
One the first bonding point；
The lead is drawn into another electrode into the adjacent electrode by one electrode, and with it is described another
A electrode bonding, forms another the first bonding point；
Using the ball bond technique respectively on another described first bonding point and one first bonding point
The first soldered ball is laminated, to be respectively formed the first solder joint.
In order to solve the above technical problems, the present invention also provides the wire bonding methods of another LED component, including walk as follows
It is rapid:
At least two formal dress type LED chips are fixedly installed on carrier；Wherein, the carrier has the first conductive carrier
With the second conductive carrier；
Using any one of the above wire bonding method respectively by the first electricity in at least two formal dress type LED chip
Pole is connect with first conductive carrier, second electrode is connect with second conductive carrier, so that at least two formal dress
Type LED chip is in parallel.
In order to solve the above technical problems, the present invention also provides the wire bonding methods of another LED component, including walk as follows
It is rapid:
First conductive carrier of the first electrode of at least two vertical-type LED chips and carrier is connected, by described in extremely
Few two vertical-type LED chips are fixedly installed on the carrier；
Using any one of the above wire bonding method by at least two vertical-types LED chip second electrode with
The second conductive carrier connection, so that at least two vertical-types LED chip is in parallel.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of LED component of the embodiment of the present invention 1.
Fig. 2 is a kind of structural schematic diagram of LED component of the embodiment of the present invention 2.
Fig. 3 is a kind of structural schematic diagram of LED component of the embodiment of the present invention 3.
Fig. 4 is a kind of structural schematic diagram of LED component of the embodiment of the present invention 4.
Fig. 5 is a kind of structural schematic diagram of LED component of the embodiment of the present invention 5.
Fig. 6 is a kind of process flow diagram of the wire bonding method of LED component of the embodiment of the present invention 6.
Fig. 7 is the process flow diagram of the wire bonding method of another LED component in the embodiment of the present invention 6.
Specific embodiment
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention.But the present invention can be with
It is different from the other modes of this description much to implement, those skilled in the art can be without violating the connotation of the present invention
Similar popularization is done, therefore the present invention is not limited by the specific embodiments disclosed below.
The present invention provides a kind of LED component, which includes: carrier, the LED chip on carrier and connection
The lead of LED chip and carrier；Wherein, the electrode of LED chip is bonded connection with one end of lead, forms the first bonding point；It carries
Body is bonded connection with the other end of lead, forms the second bonding point；The first soldered ball is laminated on the first bonding point, so that first
Bonding point and the first soldered ball collectively form the first solder joint；Lead draws to the second bonding point from the first solder joint and forms a folding
Point, the angle at break is obtuse angle, so that the distance between break and LED chip top surface are less than 90 μm.
Compared with prior art, it is laminated with the first soldered ball on first bonding point of LED chip in LED component of the invention,
So that the electrode surface of LED chip stacks gradually soldered ball, lead and soldered ball from the bottom to top, i.e. the first bonding point and the first soldered ball exist
The electrode surface of LED chip collectively forms the sandwich type structural that upper and lower soldered ball presss from both sides folded lead, and the first bonding point and the first soldered ball
Collectively form the first solder joint.Since the first soldered ball is layered on the first bonding point, the heat affecting on the first bonding point can be covered
Area then promotes the first bonding point so that lead has stronger fastness and reliability with the seam crossing for being bonded connection of electrode
It is not easy to crack, to reduce the height of lead above the first solder joint；Meanwhile because lead is drawn from the first solder joint to the second bonding
The angle that point is formed at a break and the break is obtuse angle, can further decrease the height of lead above the first solder joint, make
The distance between the break and LED chip top surface are obtained less than 90 μm, the ultralow bank of wire bonding cabling is realized, LED device can be made
The thickness of part can be prepared into thinner, meet the brightness requirement of LED component.
Wherein, in LED component of the invention, break and LED chip can be adjusted by the break that tow lead is formed
The distance between top surface.
Wherein, carrier is one of planar substrates, bracket or LED module in LED component of the invention, and LED chip is
Formal dress type LED chip or vertical-type LED chip, LED chip includes at least one, and LED chip is serial or parallel connection.
Preferably, in an embodiment of the present invention, in LED component above the first solder joint the break of lead apart from LED chip
The distance between top surface is between 10 μm~90 μm.
Below by taking carrier is bowl bracket as an example, with specific embodiments and the drawings carries out technical solution of the present invention clear
Chu, complete description.
Embodiment 1
As shown in Figure 1, being a kind of structural schematic diagram of the LED component of the embodiment of the present invention 1.
The LED component includes: carrier 1, the formal dress type LED chip 21 on carrier 1 and two connection formal dress types
The lead 3 of LED chip 21 and carrier 1；Wherein, which has the first conductive carrier 11, the second conductive carrier 12 and isolation
Articulamentum 13, the isolation articulamentum 13 is for the first conductive carrier 11 and the second conductive carrier 12 to be attached and be isolated；It should
There are two electrodes 211 for the tool of formal dress type LED chip 21.Two electrodes 211 of the formal dress type LED chip 21 respectively with lead 3 one
End bonding connection, forms the first bonding point 311, the first conductive carrier 11 and the second conductive carrier 12 are another with corresponding lead respectively
One end bonding connection, forms the second bonding 321；The first soldered ball 312 is laminated on the first bonding point 311, so that the first bonding
Point 311 and the first soldered ball 312 collectively form the first solder joint, so that the first solder joint is the sandwich knot that upper and lower soldered ball presss from both sides folded lead
Structure；Lead 3 draws to the second bonding point 321 from the first solder joint and forms a break 31, and the angle at the break 31 is obtuse angle
So that the distance between lead break 31 and 21 top surface of formal dress type LED chip are less than 90 μm.
Further, in embodiment 1, the second bonding point on the first conductive carrier 11 and the second conductive carrier 12
The second soldered ball 322 is respectively formed on 321, so that the second bonding point 321 and the second soldered ball 322 collectively form the second solder joint, it should
Second solder joint is the sandwich type structural that upper and lower soldered ball presss from both sides folded lead so that lead 3 be bonded with carrier 1 seam crossing that connects with compared with
Strong fastness and reliability then promotes the second bonding point 321 not easy to crack, increases the intensity of whole lead 3, improves LED device
Zygosity in part between lead 3 and electrode 211 and carrier 1, to reduce the cabling height of 321 top lead 3 of the second solder joint,
Realize the ultralow bank of lead 3.
Further, in the above-described embodiments, LED component further include: adhesive layer 23 is set to carrier 1 and formal dress type LED
Between chip 21, for formal dress type LED chip 21 to be bonded in carrier 1.Preferably, the adhesive layer 23 be resin, gel or
One of organic silica gel is made.
Embodiment 2
As shown in Fig. 2, being a kind of structural schematic diagram of LED component of the embodiment of the present invention 2.
The LED component includes: carrier 1, the vertical-type LED chip 22 on carrier 1 and connection vertical-type LED core
The lead 3 of piece 22 and carrier 1；Wherein, which has the first conductive carrier 11, the second conductive carrier 12 and isolation articulamentum
13, there are two electrodes 221 for the vertical-type LED chip 22 tool.One in two electrodes 221 is direct with the first conductive carrier 11
It connects, another in two electrodes 221 is bonded connection the first bonding point 311 of formation, the second conductive load with one end of lead 3
Body 12 is bonded connection with the other end of the lead 3 and forms the second bonding point 321；The first weldering is laminated on the first bonding point 311
Ball 312, so that the first bonding point 311 and the first soldered ball 312 collectively form the first solder joint, so that the first solder joint is upper and lower soldered ball folder
The sandwich type structural of folded lead；Lead 3 draws to the second bonding point 321 from the first solder joint 311 and forms a break 31, the folding
Angle at point 31 is obtuse angle so that the distance between break 31 and 22 top surface of vertical-type LED chip are less than 90 μm.
Further, in example 2, the second soldered ball is formed on the second bonding point 321 of the second conductive carrier 12
322, so that the second bonding point 321 and the second soldered ball 322 collectively form the second solder joint, so that the second solder joint is that upper and lower soldered ball folder is folded
The sandwich type structural of lead so that lead 3 be bonded with the second conductive carrier 12 connection seam crossing have stronger fastness and
Reliability then promotes the second bonding point 321 not easy to crack, increases the intensity of whole lead, to reduce on the second bonding point 321
The cabling height of lead 3.
Embodiment 3
As shown in figure 3, being a kind of structural schematic diagram of LED component of the embodiment of the present invention 3.
The LED component includes: carrier 1, at least two formal dress type LED chips 21 on carrier 1 and multiple connections
The lead 3 of carrier 1 and at least two formal dress type LED chips 21；Wherein, which includes that the first conductive carrier 11, second is conductive
Carrier 12 and isolation articulamentum 13；At least two formal dress type LED chip 21 is in parallel by lead 3, so that shape on each electrode
At being respectively formed corresponding second solder joint 322 on first solder joint 312, the first conductive carrier 11 and the second conductive carrier 12.
It should be understood that only illustrating that formal dress type LED chip is two situations in Fig. 3, when formal dress type LED chip
When number is more than two, the structure of the LED component can be derived by Fig. 3, therefore will not repeat them here.
In the embodiment of the present invention 3, at least two formal dress type LED chip 21 on carrier 1 is in parallel, so that LED
There are in device two or more formal dress type LED chips 21, and the volume of LED component can be made to it is smaller, to improve LED device
The luminous flux of part light-emitting surface increases the light emission luminance of LED component.
Embodiment 4
As shown in figure 4, being a kind of structural schematic diagram of LED component of the embodiment of the present invention 4.
The LED component includes: carrier 1, at least two formal dress type LED chips 21 on carrier 1 and multiple connections
The lead 3 of carrier 1 and at least two formal dress type LED chips 21；Wherein, which includes that the first conductive carrier 11, second is conductive
Carrier 12 and isolation articulamentum 13；At least two formal dress type LED chip 21 is connected by lead 3, so that at least two formal dress
It is formed on first solder joint 312, the first conductive carrier 11 and the second conductive carrier 12 and is divided on each electrode of type LED chip 21
It Xing Cheng not second solder joint 322.
It should be understood that only illustrating that formal dress type LED chip is two situations in Fig. 4, when formal dress type LED chip
When number is more than two, the structure of the LED component can be derived by Fig. 4, therefore will not repeat them here.
In the embodiment of the present invention 4, at least two formal dress type LED chips 21 on carrier 1 are connected, so that LED
There are in device two or more formal dress type LED chips 21, and the volume of LED component can be made to it is smaller, to improve LED device
The luminous flux of part light-emitting surface increases the light emission luminance of LED component.
Embodiment 5
As shown in figure 5, being a kind of structural schematic diagram of LED component of the embodiment of the present invention 5.
The LED component includes: carrier 1, at least two vertical-type LED chips 22 on carrier 1 and multiple connections
The lead 3 of carrier 1 and at least two vertical-type LED chips 22；Wherein, which includes that the first conductive carrier 11, second is conductive
Carrier 12 and isolation articulamentum 13；At least two vertical-types LED chip 22 is in parallel by lead 3, so that this at least two hangs down
The first electrode of straight type LED chip 22 is connect with the first conductive carrier 11, second in at least two vertical-types LED chip 22
It is formed with first solder joint 312 on electrode, forms corresponding second solder joint 322 on the second conductive carrier 12.
It should be understood that only illustrating that vertical-type LED chip is two situations in Fig. 5, when vertical-type LED chip
When number is more than two, the structure of the LED component can be derived by Fig. 5, therefore will not repeat them here.
In example 5 in accordance with the invention, at least two vertical-type LED chip 22 on carrier 1 is in parallel, so that LED
Settable two or more vertical-type LED chips 22 in device, and the volume of LED component can be made to it is smaller, to improve LED
The luminous flux of device light-emitting surface increases the light emission luminance of LED component.
Further, in above-described embodiment 1~5, LED component further include: packing colloid is filled in the bowl of bowl bracket
In cup, to coat LED chip and lead.
Embodiment 6
As shown in fig. 6, being a kind of process flow diagram of the wire bonding method of LED component of the embodiment of the present invention 6.
The present invention also provides a kind of wire bonding methods of LED component, include the following steps:
S1, LED chip is fixedly installed on carrier；
Wherein, in step sl, include the following steps:
S11, as shown in Figure 6 a, adhesive is coated on carrier；
S12, as shown in Figure 6 b, LED chip is placed on the adhesive so that LED chip carried out with carrier it is be bonded；
S13, the carrier for being bonded with LED chip is heating and curing.
Wherein, the process conditions being heating and curing to the carrier for being bonded with LED chip are that temperature is 175 DEG C, and is solidified
Time is 2 hours.
S2, as fig. 6 c, carries out lead with the electrode of LED chip using ball bond technique to be bonded connection, is formed
First bonding point；
S3, as fig. 6 c, lead is drawn by electrode to carrier, and carries out being bonded connection with carrier, forms the second key
Chalaza simultaneously cuts off lead；Wherein, lead forms a break because drawing, and the angle at break is obtuse angle, so that break and LED core
The distance between piece top surface is less than 90 μm；
S4, as shown in fig 6d, is laminated the first soldered ball by ball bond technique, so that the first key on the first bonding point
Chalaza and the first soldered ball collectively form the first solder joint.
Compared with prior art, a kind of wire bonding method of LED component of the invention is by using ball bond technique
The first bonding point is first formed on the electrode of LED chip respectively, forms the second bonding point on carrier, then uses ball bond work
The first soldered ball is laminated in skill on the first bonding point so that the electrode surface of LED chip stack gradually from the bottom to top soldered ball, lead and
Soldered ball, i.e. the first bonding point and the first soldered ball collectively form upper and lower soldered ball in the electrode surface of LED chip and press from both sides the sandwich of folded lead
Formula structure, and the first bonding point and the first soldered ball collectively form the first solder joint.Since the first soldered ball is layered on the first bonding point,
The heat affected area on the first bonding point can be covered, so that lead is with the seam crossing for being bonded connection of electrode with stronger secured
Property and reliability, then promote the first bonding point not easy to crack, to reduce the height of lead above the first solder joint；Meanwhile because
It is obtuse angle that lead, which draws to the second bonding point the angle being formed at a break and the break from the first solder joint, can further be dropped
The height of lead above low first solder joint, so that the distance between the break and LED chip top surface less than 90 μm, realize lead key
The ultralow bank for closing cabling can make the thinner of the LED component prepared using this method, meet the brightness requirement of LED component.
Preferably, as shown in fig. 7, further including following steps above-mentioned before the step S4 of wire bonding method:
S31, as shown in fig 6e, is laminated the second soldered ball by ball bond technique, so that the second key on the second bonding point
Chalaza and the second soldered ball collectively form the second solder joint；Second solder joint is the sandwich type structural that soldered ball presss from both sides folded lead.
In the implementation process, lead self-electrode draws to carrier and carries out after being bonded connection with carrier, need to cut off and draw
Line could further prepare the first soldered ball.When due to lead cutting, capillary is placed exactly in the surface of the second solder joint, because
And the first soldered ball is prepared again by first preparing the second soldered ball, the wire bonding step of LED component can be simplified, improve wire bonding effect
Rate, and then the preparation efficiency of LED component is improved, reduce preparation cost；Meanwhile the second soldered ball is prepared on the second bonding point and may be used also
Increase the intensity of the second bonding point, to effectively increase the intensity of whole lead, improves the reliability of LED component.
Preferably, further include following steps above-mentioned after the step S4 of wire bonding method:
S5, packing colloid is filled into the bowl of carrier, to coat the LED chip and lead, completes the envelope of LED component
Dress.
Embodiment 7
The present invention also provides the wire bonding methods of another LED component.The wire bonding method, includes the following steps:
At least two formal dress type LED chips are fixedly installed on carrier；Wherein, carrier has the first conductive carrier and the
Two conductive carriers；
Using any of the above-described kind of wire bonding method respectively by the first electrode and at least two formal dress type LED chips
The connection of one conductive carrier, second electrode are connect with the second conductive carrier, so that at least two formal dress type LED chips are in parallel.
It is in parallel by at least two formal dress type LED chips that will be located on carrier in the embodiment of the present invention 7, so that
There are in LED component two or more formal dress type LED chips, and the volume of LED component can be made to it is smaller, to improve LED
The luminous flux of device light-emitting surface increases the light emission luminance of LED component.
Embodiment 8
The present invention also provides the wire bonding methods of another LED component.The wire bonding method, includes the following steps:
At least two formal dress type LED chips are fixedly installed on carrier；Wherein, carrier has the first conductive carrier and the
Two conductive carriers；
At least two formal dress type LED chips are connected respectively using any of the above-described kind of wire bonding method, form string
Join branch；
Wherein, between the first electrode and the first conductive carrier of first formal dress type LED chip in the series arm
Connection and the last one formal dress type LED chip second electrode and the second conductive carrier between connection use embodiment 6
In any wire bonding method complete；The adjacent electrode of adjacent formal dress type LED chip by walking as follows in the series arm
Suddenly bonding connection is carried out:
Lead is bonded with an electrode in adjacent electrode using ball bond technique, forms one first bonding
Point；
Lead is drawn into another electrode into adjacent electrode by an electrode, and is bonded with another electrode,
Form another the first bonding point；
The first soldered ball successively is laminated on another first bonding point and first bonding point using ball bond technique,
To be respectively formed the first solder joint.
In the embodiment of the present invention 8, connected by at least two formal dress type LED chips that will be located on carrier, so that
There are in LED component two or more formal dress type LED chips, and the volume of LED component can be made to it is smaller, to improve LED
The luminous flux of device light-emitting surface increases the light emission luminance of LED component；Meanwhile using above-mentioned processing step by adjacent formal dress type LED
The adjacent electrode of chip carries out bonding connection, and wire bonding efficiency can be improved.
Embodiment 9
The present invention also provides the wire bonding methods of another LED component, include the following steps:
The first electrode of at least two vertical-type LED chips is connect with the first conductive carrier so that this at least two hang down
Straight type LED chip is fixedly installed on carrier；Wherein, carrier has the first conductive carrier and the second conductive carrier；
It is using any one wire bonding method in embodiment 6 that second at least two vertical-type LED chips is electric
Pole is connect with the second conductive carrier, so that at least two vertical-type LED chips are in parallel.
It is in parallel by at least two vertical-type LED chips that will be located on carrier in the embodiment of the present invention 9, so that
There are in LED component two or more vertical-type LED chips, and the volume of LED component can be made to it is smaller, to improve LED
The luminous flux of device increases the light emission luminance of LED component.
Further, in an embodiment of the present invention, when the LED chip in LED component is one, which is
One of blue-light LED chip, green LED chip, red LED chip, infrared light LED chip and ultraviolet leds chip；When
When LED chip in LED component includes at least two, at least two LED chip be blue-light LED chip, green LED chip,
In red LED chip, infrared light LED chip and ultraviolet leds chip it is a kind of or at least two combination.
Further, in the embodiment of the present invention, lead includes one of gold thread, silver wire, aluminum steel and alloy wire.
Further, in an embodiment of the present invention, at the first solder joint, lead and its LED chip top surface projection
Angle formed the first angle, which is acute angle；At the second solder joint, the angle of lead and its projection on carrier
The second angle is formed, which is acute angle.
Preferably, in an embodiment of the present invention, the angle of the first angle is between 0 °~60 °, the angle of the second angle
Degree is between 0 °~60 °.
Preferably, in an embodiment of the present invention, the angle of the angle at break is located within 90 °~180 °.
It preferably, in an embodiment of the present invention, due to the first soldered ball and the second soldered ball is that capillary passes through
Electric arc sparking method makes to obtain, and the first soldered ball and the second soldered ball are identical as the material of lead, so that the first soldered ball and the second weldering
The formation of ball will not generate the variation of material structure and performance, will not form heat affected area, so that the first solder joint and the second weldering
Point has preferable toughness.
The above described is only a preferred embodiment of the present invention, limitation in any form not is done to the present invention, therefore
All contents without departing from technical solution of the present invention, it is made to the above embodiment according to the technical essence of the invention any simply to repair
Change, equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of LED component characterized by comprising described in carrier, the LED chip being located on the carrier and connection
The lead of LED chip and the carrier；Wherein,
The electrode of the LED chip is bonded connection with one end of the lead, forms the first bonding point；The carrier draws with described
The other end of line is bonded connection, forms the second bonding point；
It is laminated with the first soldered ball on first bonding point, so that first bonding point and first soldered ball collectively form
First solder joint；
The lead draws to second bonding point from first solder joint and forms a break, the angle at the break
For right angle or obtuse angle, so that the distance between the break and the LED chip top surface are less than 90 μm.
2. LED component as described in claim 1, which is characterized in that it is formed with the second soldered ball on second bonding point, with
Second bonding point and second soldered ball is set to collectively form the second solder joint.
3. LED component as described in claim 1, which is characterized in that the LED chip includes formal dress type LED chip or vertical
Type LED chip.
4. LED component as claimed in claim 3, which is characterized in that the formal dress type LED chip includes at least two；It is described
Carrier includes the first conductive carrier and the second conductive carrier；Wherein,
At least two formal dress type LED chip is in parallel by the lead, so that being formed described in one on each electrode
At least two second solder joints are respectively formed on first solder joint, first conductive carrier and second conductive carrier；
Alternatively, at least two formal dress type LED chip is connected by the lead, so that at least two formal dress type LED
First solder joint is formed on each electrode of chip, is distinguished on first conductive carrier and second conductive carrier
Form second solder joint.
5. LED component as claimed in claim 3, which is characterized in that the vertical-type LED chip includes at least two；It is described
Carrier has the first conductive carrier and the second conductive carrier；
Shown at least two vertical-types LED chip is in parallel by the lead, so that in at least two vertical-types LED chip
First electrode connect with first conductive carrier, in each second electrode in at least two vertical-types LED chip
It is formed with first solder joint, at least two second solder joints are formed on second conductive carrier.
6. a kind of wire bonding method of LED component, which comprises the steps of:
LED chip is fixedly installed on carrier；
Lead is carried out using ball bond technique to be bonded connection with the electrode of the LED chip, forms the first bonding point；
The lead is drawn by the electrode to the carrier, and carries out being bonded connection with the carrier, forms the second bonding
It puts and cuts off the lead；Wherein, the lead forms a break because drawing, and the angle at the break is obtuse angle, so that
The distance between the break and the LED chip top surface are less than 90 μm；
The first soldered ball is laminated on first bonding point by ball bond technique, so that first bonding point and described
First soldered ball collectively forms the first solder joint.
7. wire bonding method as claimed in claim 6, which is characterized in that by ball bond technique in first bonding
It is laminated before the first soldered ball on point, further includes following steps:
The second soldered ball is laminated on second bonding point by ball bond technique, so that second bonding point and described
Two soldered balls collectively form the second solder joint.
8. wire bonding method as claimed in claim 7, which is characterized in that the LED chip includes at least two formal dress types
LED chip；At least two formal dress type LED chip is connected by the lead；
At least two formal dress type LED chip is formed on the adjacent electrode of adjacent formal dress type LED chip as follows
First solder joint:
The lead is bonded with an electrode in the adjacent electrode using the ball bond technique, forms one
First bonding point；
The lead is drawn into another electrode into the adjacent electrode by one electrode, and with another described electricity
Pole bonding, forms another the first bonding point；
It is laminated on another described first bonding point and one first bonding point respectively using the ball bond technique
First soldered ball, to be respectively formed the first solder joint.
9. a kind of wire bonding method of LED component, which comprises the steps of:
At least two formal dress type LED chips are fixedly installed on carrier；Wherein, the carrier has the first conductive carrier and the
Two conductive carriers；
It respectively will be in at least two formal dress type LED chip using the wire bonding method as described in claim 6 or 7
First electrode is connect with first conductive carrier, second electrode is connect with second conductive carrier, so that described at least two
A formal dress type LED chip is in parallel.
10. a kind of wire bonding method of LED component, which comprises the steps of:
First conductive carrier of the first electrode of at least two vertical-type LED chips and carrier is connected, by described at least two
A vertical-type LED chip is fixedly installed on the carrier；
It is using wire bonding method as claimed in claims 6 or 7 that second in at least two vertical-types LED chip is electric
Pole is connect with the second conductive carrier of the carrier, so that at least two vertical-types LED chip is in parallel.
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Cited By (1)
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| CN109192848B (en) | 2024-02-20 |
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