CN109192848A - A kind of LED component and its wire bonding method - Google Patents
A kind of LED component and its wire bonding method Download PDFInfo
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- CN109192848A CN109192848A CN201811180957.3A CN201811180957A CN109192848A CN 109192848 A CN109192848 A CN 109192848A CN 201811180957 A CN201811180957 A CN 201811180957A CN 109192848 A CN109192848 A CN 109192848A
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- 238000004806 packaging method and process Methods 0.000 description 4
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- 230000006872 improvement Effects 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED components, comprising: carrier, the LED chip on carrier and the lead for connecting LED chip and the carrier；The electrode of LED chip is bonded connection with one end of lead, forms the first bonding point；Carrier is bonded connection with the other end of lead, forms the second bonding point；The first soldered ball is laminated on the first bonding point, so that the first bonding point and the first soldered ball collectively form the first solder joint；Lead draws to the second bonding point from the first solder joint and forms a break, and the angle at break is right angle or obtuse angle, so that the distance between break and LED chip top surface are less than 90 μm.LED component of the invention can effectively increase the intensity of the first bonding point, and realize the ultralow bank of wire bonding cabling.The present invention also provides a kind of wire bonding methods of LED component.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to an LED device and a lead bonding method thereof.
Background
In the existing LED device packaging process, the electrodes of the LED chip are connected with the welding pads on the carrier in a lead bonding mode. The wire bonding mode comprises a spherical bonding mode and a wedge bonding mode, wherein the spherical bonding mode is that a wire is vertically inserted into a capillary chopper to align the capillary chopper with a packaging pin, a ball is formed at the tail end of the wire by an electric arc ignition method, then the capillary chopper is controlled to descend to enable a ball-shaped bulge to be in contact with one electrode of an LED chip, and the ball-shaped bulge is combined with the electrode under the action of pressure and heat to form a first bonding point; and then, controlling the capillary chopper to lift, moving the capillary chopper along a preset track, drawing the lead out of the capillary to perform arc routing, heating the lead again by an electric arc ignition method when the capillary cutter moves to a corresponding welding pad to enable the lead to form a wedge-shaped indentation on the welding pad, then controlling the capillary chopper to lift, clamping the lead when the capillary chopper rises to a preset height, and breaking the lead at the thinnest part when the capillary chopper continues to rise.
Because the first bonding point is formed under the action of high temperature, the lead and the electrode material on the two sides of the welding seam of the first bonding point can generate obvious structural and performance changes to form a heat affected zone, so that the first bonding point has high brittleness and is easy to crack. In order to increase the reliability of the first bonding point in the LED device, in the existing ball bonding manner, after the first bonding point is formed, the capillary is usually lifted to a height of at least 90 μm and then moved, so that when the LED device is impacted or when the encapsulant of the LED device expands with heat and contracts with cold, the lead directly above the first bonding point has certain toughness, and can play a role in buffering. However, as the brightness requirement of the LED device is continuously increased, in order to increase the brightness of the LED chip, the thickness of the light emitting layer of the LED chip is gradually increased, and the thickness of the phosphor layer of the LED device needs to be gradually reduced, which results in that the existing wire bonding method cannot meet the brightness requirement of the LED device.
Disclosure of Invention
Aiming at the problems, the LED device and the lead bonding method thereof can effectively increase the strength of the first bonding point and realize the ultralow wire arc of the lead bonding wire, so that the thickness of the LED device can be made thinner, and the brightness requirement of the LED device is met.
To solve the above technical problem, an LED device of the present invention includes: the LED chip comprises a carrier, an LED chip positioned on the carrier and a lead wire for connecting the LED chip and the carrier; wherein,
the electrode of the LED chip is in bonding connection with one end of the lead to form a first bonding point; the carrier is in bonding connection with the other end of the lead to form a second bonding point;
stacking a first solder ball on the first bonding point, so that the first bonding point and the first solder ball jointly form a first welding point;
the lead is drawn from the first welding point to the second bonding point and forms a break point, and the included angle at the break point is a right angle or an obtuse angle, so that the distance between the break point and the top surface of the LED chip is smaller than 90 mu m.
Compared with the prior art, the first welding balls are stacked on the first bonding points of the LED chip in the LED device, so that the welding balls, the lead and the welding balls are sequentially stacked on the electrode surface of the LED chip from bottom to top, namely the first bonding points and the first welding balls jointly form a sandwich structure of the upper and lower welding balls clamping the lead on the electrode surface of the LED chip, and the first bonding points and the first welding balls jointly form first welding points. Because the first welding ball is stacked on the first bonding point, the heat affected zone on the first bonding point can be covered, so that the joint of the bonding connection of the lead and the electrode has stronger firmness and reliability, the first bonding point is not easy to crack, and the height of the lead above the first welding point is reduced; meanwhile, because the lead is drawn from the first welding point to the second bonding point to form a break point and the included angle of the break point is an obtuse angle, the height of the lead above the first welding point can be further reduced, so that the distance between the break point and the top surface of the LED chip is smaller than 90 microns, the ultralow wire arc of the lead bonding routing is realized, the thickness of the LED device can be made thinner, and the brightness requirement of the LED device is met.
As an improvement of the above scheme, a second solder ball is formed on the second bonding point, so that the second bonding point and the second solder ball jointly form a second solder joint.
As a modification of the above, the LED chip includes a forward-mounted type LED chip or a vertical type LED chip.
As a modification of the above, the forward-mounted LED chip includes at least two; the carrier comprises a first conductive carrier and a second conductive carrier; wherein,
the at least two forward-mounted LED chips are connected in parallel through the lead wires, so that one first welding point is formed on each electrode, and at least two second welding points are respectively formed on the first conductive carrier and the second conductive carrier;
or, the at least two forward-mounted LED chips are connected in series through the lead, so that one first solder joint is formed on each electrode of the at least two forward-mounted LED chips, and one second solder joint is formed on each of the first conductive carrier and the second conductive carrier.
As an improvement of the above scheme, the vertical type LED chip includes at least two; the carrier has a first conductive carrier and a second conductive carrier;
the at least two vertical type LED chips are connected in parallel through the lead wires, so that first electrodes of the at least two vertical type LED chips are connected with the first conductive carrier, each second electrode of the at least two vertical type LED chips is provided with one first welding point, and the second conductive carrier is provided with at least two second welding points.
In order to solve the above technical problem, the present invention further provides a wire bonding method of an LED device, including the steps of:
fixedly arranging an LED chip on a carrier;
bonding and connecting a lead and an electrode of the LED chip by using a spherical bonding process to form a first bonding point;
drawing the lead to the carrier from the electrode, and bonding and connecting the lead and the carrier to form a second bonding point and cut off the lead; the lead forms a break point due to traction, and the included angle at the break point is an obtuse angle, so that the distance between the break point and the top surface of the LED chip is smaller than 90 micrometers;
and stacking a first solder ball on the first bonding point through a ball bonding process, so that the first bonding point and the first solder ball jointly form a first welding point.
Compared with the prior art, the lead bonding method of the LED device comprises the steps of firstly forming a first bonding point on an electrode of an LED chip and a second bonding point on a carrier respectively by adopting a spherical bonding process, and then laminating a first solder ball on the first bonding point by adopting the spherical bonding process, so that the solder ball, the lead and the solder ball are sequentially laminated on the surface of the electrode of the LED chip from bottom to top, namely the first bonding point and the first solder ball jointly form a sandwich structure of the upper and lower solder ball laminated leads on the surface of the electrode of the LED chip, and the first bonding point and the first solder ball jointly form a first welding point. Because the first welding ball is stacked on the first bonding point, the heat affected zone on the first bonding point can be covered, so that the joint of the bonding connection of the lead and the electrode has stronger firmness and reliability, the first bonding point is not easy to crack, and the height of the lead above the first welding point is reduced; meanwhile, because the lead is drawn from the first welding point to the second bonding point to form a break point and the included angle of the break point is an obtuse angle, the height of the lead above the first welding point can be further reduced, so that the distance between the break point and the top surface of the LED chip is smaller than 90 microns, the ultralow wire arc of the lead bonding routing is realized, the thickness of the LED device prepared by the method is thinner, and the brightness requirement of the LED device is met.
As an improvement of the above solution, before stacking the first solder ball on the first bonding point by a ball bonding process, the method further includes the following steps:
and stacking a second solder ball on the second bonding point through a ball bonding process, so that the second bonding point and the second solder ball jointly form a second welding point.
As a modification of the above scheme, the LED chip includes at least two forward-mounted LED chips; the at least two forward-mounted LED chips are connected in series through the lead;
the at least two forward-mounted LED chips form a first welding point on adjacent electrodes of adjacent forward-mounted LED chips through the following steps:
bonding the lead with one of the adjacent electrodes by using the ball bonding process to form a first bonding point;
drawing the lead from the one electrode to the other electrode of the adjacent electrodes and bonding the lead with the other electrode to form another first bonding point;
and respectively stacking first solder balls on the other first bonding point and the first bonding point by using the ball bonding process to respectively form first welding points.
In order to solve the above technical problem, the present invention further provides another method for bonding a wire of an LED device, including the steps of:
at least two positive LED chips are fixedly arranged on a carrier; wherein the carrier has a first conductive carrier and a second conductive carrier;
and respectively connecting a first electrode and a second electrode of the at least two forward-mounted LED chips with the first conductive carrier and the second conductive carrier by using any one of the wire bonding methods, so that the at least two forward-mounted LED chips are connected in parallel.
In order to solve the above technical problem, the present invention further provides a wire bonding method for an LED device, including the steps of:
connecting first electrodes of at least two vertical type LED chips with a first conductive carrier of the carrier so as to fixedly arrange the at least two vertical type LED chips on the carrier;
and connecting the second electrodes of the at least two vertical LED chips with the second conductive carrier by adopting any one of the wire bonding methods, so that the at least two vertical LED chips are connected in parallel.
Drawings
Fig. 1 is a schematic structural view of an LED device according to embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of an LED device according to embodiment 2 of the present invention.
Fig. 3 is a schematic structural diagram of an LED device according to embodiment 3 of the present invention.
Fig. 4 is a schematic structural diagram of an LED device according to embodiment 4 of the present invention.
Fig. 5 is a schematic structural view of an LED device according to embodiment 5 of the present invention.
Fig. 6 is a process flow diagram of a wire bonding method of an LED device according to embodiment 6 of the present invention.
Fig. 7 is a process flow diagram of another wire bonding method for an LED device in embodiment 6 of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
The present invention provides an LED device comprising: the LED chip comprises a carrier, an LED chip positioned on the carrier and a lead wire for connecting the LED chip and the carrier; the electrode of the LED chip is connected with one end of the lead in a bonding mode to form a first bonding point; the carrier is in bonding connection with the other end of the lead to form a second bonding point; stacking a first solder ball on the first bonding point, so that the first bonding point and the first solder ball jointly form a first welding point; the lead is drawn from the first welding point to the second bonding point and forms a folding point, and the included angle at the folding point is an obtuse angle, so that the distance between the folding point and the top surface of the LED chip is smaller than 90 mu m.
Compared with the prior art, the first welding balls are stacked on the first bonding points of the LED chip in the LED device, so that the welding balls, the lead and the welding balls are sequentially stacked on the electrode surface of the LED chip from bottom to top, namely the first bonding points and the first welding balls jointly form a sandwich structure of the upper and lower welding balls clamping the lead on the electrode surface of the LED chip, and the first bonding points and the first welding balls jointly form first welding points. Because the first welding ball is stacked on the first bonding point, the heat affected zone on the first bonding point can be covered, so that the joint of the bonding connection of the lead and the electrode has stronger firmness and reliability, the first bonding point is not easy to crack, and the height of the lead above the first welding point is reduced; meanwhile, because the lead is drawn from the first welding point to the second bonding point to form a break point and the included angle of the break point is an obtuse angle, the height of the lead above the first welding point can be further reduced, so that the distance between the break point and the top surface of the LED chip is smaller than 90 microns, the ultralow wire arc of the lead bonding routing is realized, the thickness of the LED device can be made thinner, and the brightness requirement of the LED device is met.
In the LED device, the distance between the folding point and the top surface of the LED chip can be adjusted through the folding point formed by the traction lead.
The carrier in the LED device is one of a planar substrate, a support or an LED module, the LED chips are upright LED chips or vertical LED chips, the number of the LED chips is at least 1, and the LED chips are connected in series or in parallel.
Preferably, in the embodiment of the invention, the distance between the broken point of the lead above the first welding point in the LED device and the top surface of the LED chip is between 10 and 90 microns.
The technical solution of the present invention is described in detail and fully below with reference to the following embodiments and accompanying drawings, taking the carrier as a bowl and cup holder as an example.
Example 1
Fig. 1 is a schematic structural diagram of an LED device according to embodiment 1 of the present invention.
The LED device includes: the LED chip comprises a carrier 1, a forward-mounted LED chip 21 positioned on the carrier 1, and two leads 3 for connecting the forward-mounted LED chip 21 and the carrier 1; the carrier 1 is provided with a first conductive carrier 11, a second conductive carrier 12 and an isolation connecting layer 13, wherein the isolation connecting layer 13 is used for connecting and isolating the first conductive carrier 11 and the second conductive carrier 12; the front-loading type LED chip 21 has two electrodes 211. Two electrodes 211 of the forward-mounted LED chip 21 are respectively bonded to one end of a lead 3 to form a first bonding point 311, and the first conductive carrier 11 and the second conductive carrier 12 are respectively bonded to the other end of the corresponding lead to form a second bonding 321; a first solder ball 312 is stacked on the first bonding point 311, so that the first bonding point 311 and the first solder ball 312 jointly form a first welding point, and the first welding point is of a sandwich structure in which leads are sandwiched by upper and lower solder balls; the lead 3 is drawn from the first bonding point to the second bonding point 321 and forms a break 31, and the included angle at the break 31 is obtuse so that the distance between the break 31 and the top surface of the normal LED chip 21 is less than 90 μm.
Further, in embodiment 1, second solder balls 322 are respectively formed on the second bonding points 321 on the first conductive carrier 11 and the second conductive carrier 12, so that the second bonding points 321 and the second solder balls 322 jointly form a second solder joint, and the second solder joint is a sandwich structure in which upper and lower solder balls sandwich a lead, so that a joint where the lead 3 is bonded and connected with the carrier 1 has stronger firmness and reliability, the second bonding points 321 are made not to crack easily, the strength of the whole lead 3 is increased, the connectivity between the lead 3, the electrode 211 and the carrier 1 in the LED device is improved, so that the routing height of the lead 3 above the second solder joint 321 is reduced, and an ultra-low wire arc of the lead 3 is realized.
Further, in the above embodiment, the LED device further includes: and an adhesive layer 23 disposed between the carrier 1 and the front-mounted LED chip 21 for adhering the front-mounted LED chip 21 to the carrier 1. Preferably, the adhesive layer 23 is made of one of resin, gel, or silicone.
Example 2
Fig. 2 is a schematic structural diagram of an LED device according to embodiment 2 of the present invention.
The LED device includes: a carrier 1, a vertical type LED chip 22 on the carrier 1, and a lead 3 connecting the vertical type LED chip 22 and the carrier 1; wherein the carrier 1 has a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13, and the vertical type LED chip 22 has two electrodes 221. One of the two electrodes 221 is directly connected with the first conductive carrier 11, the other of the two electrodes 221 is bonded and connected with one end of the lead 3 to form a first bonding point 311, and the second conductive carrier 12 is bonded and connected with the other end of the lead 3 to form a second bonding point 321; a first solder ball 312 is stacked on the first bonding point 311, so that the first bonding point 311 and the first solder ball 312 jointly form a first welding point, and the first welding point is of a sandwich structure in which leads are sandwiched by upper and lower solder balls; the lead 3 is drawn from the first bonding pad 311 to the second bonding point 321 and forms a break 31, and the included angle at the break 31 is obtuse so that the distance between the break 31 and the top surface of the vertical LED chip 22 is less than 90 μm.
Further, in embodiment 2, a second solder ball 322 is formed on the second bonding point 321 of the second conductive carrier 12, so that the second bonding point 321 and the second solder ball 322 together form a second solder joint, and the second solder joint is a sandwich structure in which the upper and lower solder balls sandwich the lead, so that the joint where the lead 3 is bonded and connected with the second conductive carrier 12 has stronger firmness and reliability, and the second bonding point 321 is not easy to crack, and the strength of the whole lead is increased, so as to reduce the routing height of the lead 3 on the second bonding point 321.
Example 3
Fig. 3 is a schematic structural diagram of an LED device according to embodiment 3 of the present invention.
The LED device includes: the LED chip packaging structure comprises a carrier 1, at least two forward-mounted LED chips 21 positioned on the carrier 1, and a plurality of leads 3 connecting the carrier 1 and the at least two forward-mounted LED chips 21; wherein the carrier 1 comprises a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13; the at least two forward-mounted LED chips 21 are connected in parallel by the lead 3, so that a first solder joint 312 is formed on each electrode, and a corresponding second solder joint 322 is formed on the first conductive carrier 11 and the second conductive carrier 12.
It can be understood that fig. 3 only illustrates the case where there are two forward-mounted LED chips, and when the number of forward-mounted LED chips exceeds two, the structure of the LED device can be derived from fig. 3, and therefore, the details are not repeated herein.
In embodiment 3 of the present invention, at least two forward-mounted LED chips 21 on the carrier 1 are connected in parallel, so that two or more forward-mounted LED chips 21 are provided in the LED device, and the volume of the LED device can be made smaller, thereby increasing the luminous flux on the light-emitting surface of the LED device and increasing the luminance of the LED device.
Example 4
Fig. 4 is a schematic structural diagram of an LED device according to embodiment 4 of the present invention.
The LED device includes: the LED chip packaging structure comprises a carrier 1, at least two forward-mounted LED chips 21 positioned on the carrier 1, and a plurality of leads 3 connecting the carrier 1 and the at least two forward-mounted LED chips 21; wherein the carrier 1 comprises a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13; the at least two forward-mounted LED chips 21 are connected in series by the lead 3, so that a first solder point 312 is formed on each electrode of the at least two forward-mounted LED chips 21, and a second solder point 322 is formed on the first conductive carrier 11 and the second conductive carrier 12, respectively.
It can be understood that fig. 4 only illustrates the case where there are two forward-mounted LED chips, and when the number of forward-mounted LED chips exceeds two, the structure of the LED device can be derived from fig. 4, and therefore, the details are not repeated here.
In embodiment 4 of the present invention, at least two forward-mounted LED chips 21 on the carrier 1 are connected in series, so that two or more forward-mounted LED chips 21 are provided in the LED device, and the volume of the LED device can be made smaller, thereby increasing the luminous flux on the light-emitting surface of the LED device and increasing the luminance of the LED device.
Example 5
Fig. 5 is a schematic structural diagram of an LED device according to embodiment 5 of the present invention.
The LED device includes: a carrier 1, at least two vertical type LED chips 22 on the carrier 1, and a plurality of leads 3 connecting the carrier 1 and the at least two vertical type LED chips 22; wherein the carrier 1 comprises a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13; the at least two vertical type LED chips 22 are connected in parallel by the lead 3, so that the first electrodes of the at least two vertical type LED chips 22 are connected to the first conductive carrier 11, a first solder joint 312 is formed on the second electrode of the at least two vertical type LED chips 22, and a corresponding second solder joint 322 is formed on the second conductive carrier 12.
It can be understood that fig. 5 only illustrates the case where there are two vertical LED chips, and when the number of the vertical LED chips exceeds two, the structure of the LED device can be derived from fig. 5, so that the detailed description thereof is omitted here.
In embodiment 5 of the present invention, at least two vertical LED chips 22 on the carrier 1 are connected in parallel, so that two or more vertical LED chips 22 can be disposed in the LED device, and the volume of the LED device can be made smaller, thereby increasing the luminous flux on the light emitting surface of the LED device and increasing the light emitting brightness of the LED device.
Further, in embodiments 1 to 5 above, the LED device further includes: and the packaging colloid is filled in the bowl of the bowl support to coat the LED chip and the lead.
Example 6
Fig. 6 is a schematic process flow diagram of a wire bonding method for an LED device according to embodiment 6 of the present invention.
The invention also provides a lead bonding method of the LED device, which comprises the following steps:
s1, fixing the LED chip on the carrier;
in step S1, the method includes the following steps:
s11, as shown in fig. 6a, coating an adhesive on the carrier;
s12, as shown in fig. 6b, placing the LED chip on the adhesive to bond the LED chip and the carrier;
and S13, heating and curing the carrier adhered with the LED chip.
Wherein, the process conditions for heating and curing the carrier adhered with the LED chip are 175 ℃ and the curing time is 2 hours.
S2, as shown in fig. 6c, bonding and connecting the lead and the electrode of the LED chip by using a ball bonding process to form a first bonding point;
s3, as shown in FIG. 6c, the lead is drawn to the carrier by the electrode and is bonded with the carrier to form a second bonding point and cut off the lead; wherein, the lead forms a break point due to traction, and the included angle at the break point is an obtuse angle, so that the distance between the break point and the top surface of the LED chip is less than 90 μm;
s4, as shown in fig. 6d, stacking a first solder ball on the first bonding point by a ball bonding process, so that the first bonding point and the first solder ball jointly constitute a first solder joint.
Compared with the prior art, the lead bonding method of the LED device comprises the steps of firstly forming a first bonding point on an electrode of an LED chip and a second bonding point on a carrier respectively by adopting a spherical bonding process, and then laminating a first solder ball on the first bonding point by adopting the spherical bonding process, so that the solder ball, the lead and the solder ball are sequentially laminated on the surface of the electrode of the LED chip from bottom to top, namely the first bonding point and the first solder ball jointly form a sandwich structure of the upper and lower solder ball laminated leads on the surface of the electrode of the LED chip, and the first bonding point and the first solder ball jointly form a first welding point. Because the first welding ball is stacked on the first bonding point, the heat affected zone on the first bonding point can be covered, so that the joint of the bonding connection of the lead and the electrode has stronger firmness and reliability, the first bonding point is not easy to crack, and the height of the lead above the first welding point is reduced; meanwhile, because the lead is drawn from the first welding point to the second bonding point to form a break point and the included angle of the break point is an obtuse angle, the height of the lead above the first welding point can be further reduced, so that the distance between the break point and the top surface of the LED chip is smaller than 90 microns, the ultralow wire arc of the lead bonding routing is realized, the thickness of the LED device prepared by the method is thinner, and the brightness requirement of the LED device is met.
Preferably, as shown in fig. 7, before step S4 of the wire bonding method, the method further includes the following steps:
s31, as shown in FIG. 6e, stacking a second solder ball on the second bonding point through a ball bonding process, so that the second bonding point and the second solder ball jointly form a second solder joint; the second welding point is a sandwich structure of a solder ball clamping and overlapping lead.
In the implementation process, after the lead is drawn from the electrode to the carrier and is bonded with the carrier, the lead needs to be cut off to further prepare the first solder ball. When the lead is cut off, the capillary is just positioned right above the second welding point, so that the lead bonding step of the LED device can be simplified by preparing the second welding ball firstly and then preparing the first welding ball, the lead bonding efficiency is improved, the preparation efficiency of the LED device is improved, and the preparation cost is reduced; meanwhile, the strength of the second bonding point can be increased by preparing the second solder ball on the second bonding point, so that the strength of the whole lead is effectively increased, and the reliability of the LED device is improved.
Preferably, after the step S4 of the wire bonding method, the method further includes the following steps:
and S5, filling the encapsulation colloid in the bowl of the carrier to coat the LED chip and the lead, and completing the encapsulation of the LED device.
Example 7
The invention also provides another wire bonding method of the LED device. The lead bonding method comprises the following steps:
at least two positive LED chips are fixedly arranged on a carrier; wherein the carrier has a first conductive carrier and a second conductive carrier;
and respectively connecting the first electrode and the second electrode of the at least two forward-mounted LED chips with the first conductive carrier and the second conductive carrier by using any one of the wire bonding methods, so that the at least two forward-mounted LED chips are connected in parallel.
In embodiment 7 of the present invention, at least two forward-mounted LED chips located on the carrier are connected in parallel, so that two or more forward-mounted LED chips are provided in the LED device, and the volume of the LED device can be made smaller, thereby increasing the luminous flux on the light emitting surface of the LED device and increasing the luminance of the LED device.
Example 8
The invention also provides another wire bonding method of the LED device. The lead bonding method comprises the following steps:
at least two positive LED chips are fixedly arranged on a carrier; wherein the carrier has a first conductive carrier and a second conductive carrier;
respectively connecting at least two positive LED chips in series by using any one of the lead bonding methods to form a series branch;
wherein the connection between the first electrode of the first forward LED chip and the first conductive carrier, and the connection between the second electrode of the last forward LED chip and the second conductive carrier in the series branch are accomplished using any of the wire bonding methods of embodiment 6; the adjacent electrodes of the adjacent upright LED chips in the series branch are bonded and connected through the following steps:
bonding the lead with one of the adjacent electrodes by using a ball bonding process to form a first bonding point;
drawing a lead from the one electrode to the other electrode of the adjacent electrodes, and bonding the lead with the other electrode to form another first bonding point;
and sequentially stacking first solder balls on the other first bonding point and the first bonding point by using a ball bonding process to respectively form first welding points.
In embodiment 8 of the present invention, by connecting at least two forward-mounted LED chips on a carrier in series, two or more forward-mounted LED chips are provided in an LED device, and the volume of the LED device can be made smaller, thereby improving the luminous flux of the light-emitting surface of the LED device and increasing the luminance of the LED device; meanwhile, the adjacent electrodes of the adjacent upright LED chips are bonded and connected by adopting the process steps, so that the lead bonding efficiency can be improved.
Example 9
The invention also provides a wire bonding method of the LED device, which comprises the following steps:
connecting first electrodes of at least two vertical type LED chips with a first conductive carrier so as to fixedly arrange the at least two vertical type LED chips on the carrier; wherein the carrier has a first conductive carrier and a second conductive carrier;
connecting the second electrodes of the at least two vertical type LED chips to the second conductive carrier by using any one of the wire bonding methods of embodiment 6, so that the at least two vertical type LED chips are connected in parallel.
In embodiment 9 of the present invention, at least two vertical LED chips located on the carrier are connected in parallel, so that two or more vertical LED chips are provided in the LED device, and the volume of the LED device can be made smaller, thereby improving the luminous flux of the LED device and increasing the luminance of the LED device.
Further, in the embodiment of the present invention, when there is one LED chip in the LED device, the LED chip is one of a blue LED chip, a green LED chip, a red LED chip, an infrared LED chip, and an ultraviolet LED chip; when the LED chips in the LED device comprise at least two LED chips, the at least two LED chips are one or a combination of at least two of a blue LED chip, a green LED chip, a red LED chip, an infrared LED chip and an ultraviolet LED chip.
Further, in an embodiment of the present invention, the lead wire includes one of a gold wire, a silver wire, an aluminum wire, and an alloy wire.
Further, in the embodiment of the present invention, at the first bonding point, an included angle between the lead and its projection on the top surface of the LED chip forms a first included angle, and the first included angle is an acute angle; at the second welding point, the included angle between the lead and the projection of the lead on the carrier forms a second included angle which is an acute angle.
Preferably, in the embodiment of the present invention, the angle of the first included angle is between 0 ° and 60 °, and the angle of the second included angle is between 0 ° and 60 °.
Preferably, in the embodiment of the present invention, the angle of the included angle at the folding point is within 90 ° to 180 °.
Preferably, in the embodiment of the present invention, since the first solder ball and the second solder ball are both made of capillary and are made by an arc striking method, and the first solder ball and the second solder ball are made of the same material as the lead, the formation of the first solder ball and the second solder ball does not generate a change in material structure and performance, and a heat affected zone is not formed, so that the first solder joint and the second solder joint have good toughness.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any simple modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention will still fall within the scope of the technical solution of the present invention without departing from the content of the technical solution of the present invention.
Claims (10)
1. An LED device, comprising: the LED chip comprises a carrier, an LED chip positioned on the carrier and a lead wire for connecting the LED chip and the carrier; wherein,
the electrode of the LED chip is in bonding connection with one end of the lead to form a first bonding point; the carrier is in bonding connection with the other end of the lead to form a second bonding point;
stacking a first solder ball on the first bonding point, so that the first bonding point and the first solder ball jointly form a first welding point;
the lead is drawn from the first welding point to the second bonding point and forms a break point, and the included angle at the break point is a right angle or an obtuse angle, so that the distance between the break point and the top surface of the LED chip is smaller than 90 mu m.
2. The LED device of claim 1 wherein a second solder ball is formed on said second bond site such that said second bond site and said second solder ball together form a second solder joint.
3. The LED device of claim 1, wherein the LED chip comprises a front-loading type LED chip or a vertical type LED chip.
4. The LED device of claim 3, wherein the forward mounted LED chip comprises at least two; the carrier comprises a first conductive carrier and a second conductive carrier; wherein,
the at least two forward-mounted LED chips are connected in parallel through the lead wires, so that one first welding point is formed on each electrode, and at least two second welding points are respectively formed on the first conductive carrier and the second conductive carrier;
or, the at least two forward-mounted LED chips are connected in series through the lead, so that one first solder joint is formed on each electrode of the at least two forward-mounted LED chips, and one second solder joint is formed on each of the first conductive carrier and the second conductive carrier.
5. The LED device of claim 3, wherein the vertical type LED chip comprises at least two; the carrier has a first conductive carrier and a second conductive carrier;
the at least two vertical type LED chips are connected in parallel through the lead wires, so that first electrodes of the at least two vertical type LED chips are connected with the first conductive carrier, each second electrode of the at least two vertical type LED chips is provided with one first welding point, and the second conductive carrier is provided with at least two second welding points.
6. A wire bonding method of an LED device is characterized by comprising the following steps:
fixedly arranging an LED chip on a carrier;
bonding and connecting a lead and an electrode of the LED chip by using a spherical bonding process to form a first bonding point;
drawing the lead to the carrier from the electrode, and bonding and connecting the lead and the carrier to form a second bonding point and cut off the lead; the lead forms a break point due to traction, and the included angle at the break point is an obtuse angle, so that the distance between the break point and the top surface of the LED chip is smaller than 90 micrometers;
and stacking a first solder ball on the first bonding point through a ball bonding process, so that the first bonding point and the first solder ball jointly form a first welding point.
7. The wire bonding method of claim 6, wherein prior to stacking the first solder ball on the first bond site by a ball bonding process, further comprising the steps of:
and stacking a second solder ball on the second bonding point through a ball bonding process, so that the second bonding point and the second solder ball jointly form a second welding point.
8. The wire bonding method of claim 7, wherein the LED chip comprises at least two forward mounted LED chips; the at least two forward-mounted LED chips are connected in series through the lead;
the at least two forward-mounted LED chips form a first welding point on adjacent electrodes of adjacent forward-mounted LED chips through the following steps:
bonding the lead with one of the adjacent electrodes by using the ball bonding process to form a first bonding point;
drawing the lead from the one electrode to the other electrode of the adjacent electrodes and bonding the lead with the other electrode to form another first bonding point;
and respectively stacking first solder balls on the other first bonding point and the first bonding point by using the ball bonding process to respectively form first welding points.
9. A wire bonding method of an LED device is characterized by comprising the following steps:
at least two positive LED chips are fixedly arranged on a carrier; wherein the carrier has a first conductive carrier and a second conductive carrier;
connecting a first electrode and a second electrode of the at least two forward mounted LED chips to the first conductive carrier and the second conductive carrier, respectively, using the wire bonding method as defined in claim 6 or 7, such that the at least two forward mounted LED chips are connected in parallel.
10. A wire bonding method of an LED device is characterized by comprising the following steps:
connecting first electrodes of at least two vertical type LED chips with a first conductive carrier of the carrier so as to fixedly arrange the at least two vertical type LED chips on the carrier;
connecting the second electrodes of the at least two vertical type LED chips with the second conductive carrier of the carrier by using the wire bonding method according to claim 6 or 7, so that the at least two vertical type LED chips are connected in parallel.
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| CN109192848B (en) | 2024-02-20 |
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