CN209169184U - A kind of LED component - Google Patents
A kind of LED component Download PDFInfo
- Publication number
- CN209169184U CN209169184U CN201821644247.7U CN201821644247U CN209169184U CN 209169184 U CN209169184 U CN 209169184U CN 201821644247 U CN201821644247 U CN 201821644247U CN 209169184 U CN209169184 U CN 209169184U
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- carrier
- lead
- led chip
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 64
- 238000003466 welding Methods 0.000 claims description 32
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 230000001154 acute effect Effects 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 230000006872 improvement Effects 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 235000009537 plain noodles Nutrition 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of LED components, comprising: carrier, the LED chip on carrier and the lead for connecting LED chip and the carrier；The electrode of LED chip is bonded connection with one end of lead, forms the first bonding point；Carrier is bonded connection with the other end of lead, forms the second bonding point；The first soldered ball is laminated on the first bonding point, so that the first bonding point and the first soldered ball collectively form the first solder joint；Lead draws to the second bonding point from the first solder joint and forms a break, and the angle at break is right angle or obtuse angle, so that the distance between break and LED chip top surface are less than 90 μm.The LED component of the utility model can effectively increase the intensity of the first bonding point, and realize the ultralow bank of wire bonding cabling.
Description
Technical Field
The utility model relates to a LED technical field especially relates to a LED device.
Background
In the existing LED device packaging process, the electrodes of the LED chip are connected with the welding pads on the carrier in a lead bonding mode. The wire bonding mode comprises a spherical bonding mode and a wedge bonding mode, wherein the spherical bonding mode is that a wire is vertically inserted into a capillary chopper to align the capillary chopper with a packaging pin, a ball is formed at the tail end of the wire by an electric arc ignition method, then the capillary chopper is controlled to descend to enable a ball-shaped bulge to be in contact with one electrode of an LED chip, and the ball-shaped bulge is combined with the electrode under the action of pressure and heat to form a first bonding point; and then, controlling the capillary chopper to lift, moving the capillary chopper along a preset track, drawing the lead out of the capillary to perform arc routing, heating the lead again by an electric arc ignition method when the capillary cutter moves to a corresponding welding pad to enable the lead to form a wedge-shaped indentation on the welding pad, then controlling the capillary chopper to lift, clamping the lead when the capillary chopper rises to a preset height, and breaking the lead at the thinnest part when the capillary chopper continues to rise.
Because the first bonding point is formed under the action of high temperature, the lead and the electrode material on the two sides of the welding seam of the first bonding point can generate obvious structural and performance changes to form a heat affected zone, so that the first bonding point has high brittleness and is easy to crack. In order to increase the reliability of the first bonding point in the LED device, in the existing ball bonding manner, after the first bonding point is formed, the capillary is usually lifted to a height of at least 90 μm and then moved, so that when the LED device is impacted or when the encapsulant of the LED device expands with heat and contracts with cold, the lead directly above the first bonding point has certain toughness, and can play a role in buffering. However, as the brightness requirement of the LED device is continuously increased, in order to increase the brightness of the LED chip, the thickness of the light emitting layer of the LED chip is gradually increased, and the thickness of the phosphor layer of the LED device needs to be gradually reduced, which results in that the existing wire bonding method cannot meet the brightness requirement of the LED device.
SUMMERY OF THE UTILITY MODEL
To the above problem, the utility model discloses a LED device can effectively increase the intensity of first bonding point, and realizes the ultralow wire arc of line is walked in the lead bonding, and then makes the thickness of LED device can prepare thinly, satisfies the luminance requirement of LED device.
In order to solve the above technical problem, the utility model discloses a LED device, include: the LED chip comprises a carrier, an LED chip positioned on the carrier and a lead wire for connecting the LED chip and the carrier; wherein,
the electrode of the LED chip is in bonding connection with one end of the lead to form a first bonding point; the carrier is in bonding connection with the other end of the lead to form a second bonding point;
stacking a first solder ball on the first bonding point, so that the first bonding point and the first solder ball jointly form a first welding point;
the lead is drawn from the first welding point to the second bonding point and forms a break point, and the included angle at the break point is a right angle or an obtuse angle, so that the distance between the break point and the top surface of the LED chip is smaller than 90 mu m.
Compared with the prior art, the utility model discloses a it has first solder ball to stack up on the first bonding point of LED chip among the LED device for the electrode surface of LED chip is by lower supreme solder ball, lead wire and the solder ball of stacking gradually, and the sandwich formula structure of solder ball clamp fold lead wire about first bonding point and first solder ball constitute jointly on the electrode surface of LED chip promptly, and first bonding point and first solder ball constitute first solder joint jointly. Because the first welding ball is stacked on the first bonding point, the heat affected zone on the first bonding point can be covered, so that the joint of the bonding connection of the lead and the electrode has stronger firmness and reliability, the first bonding point is not easy to crack, and the height of the lead above the first welding point is reduced; meanwhile, because the lead is drawn from the first welding point to the second bonding point to form a break point and the included angle of the break point is an obtuse angle, the height of the lead above the first welding point can be further reduced, so that the distance between the break point and the top surface of the LED chip is smaller than 90 microns, the ultralow wire arc of the lead bonding routing is realized, the thickness of the LED device can be made thinner, and the brightness requirement of the LED device is met.
As an improvement of the above scheme, a second solder ball is formed on the second bonding point, so that the second bonding point and the second solder ball jointly form a second solder joint.
As a modification of the above, the LED chip includes a forward-mounted type LED chip or a vertical type LED chip.
As a modification of the above, the forward-mounted LED chip includes at least two; the carrier comprises a first conductive carrier and a second conductive carrier; wherein,
the at least two forward-mounted LED chips are connected in parallel through the lead wires, so that one first welding point is formed on each electrode, and at least two second welding points are respectively formed on the first conductive carrier and the second conductive carrier;
or, the at least two forward-mounted LED chips are connected in series through the lead, so that one first solder joint is formed on each electrode of the at least two forward-mounted LED chips, and one second solder joint is formed on each of the first conductive carrier and the second conductive carrier.
As an improvement of the above scheme, the vertical type LED chip includes at least two; the carrier has a first conductive carrier and a second conductive carrier;
the at least two vertical type LED chips are connected in parallel through the lead wires, so that first electrodes of the at least two vertical type LED chips are connected with the first conductive carrier, each second electrode of the at least two vertical type LED chips is provided with one first welding point, and the second conductive carrier is provided with at least two second welding points.
As an improvement of the scheme, a first included angle is formed between the lead at the first welding point and the projection angle of the lead on the top surface of the LED chip, and the first included angle is an acute angle.
As an improvement of the above scheme, an included angle between the lead at the second bonding point and its projection on the carrier forms a second included angle, and the second included angle is an acute angle.
As an improvement of the scheme, the angle of the included angle at the folding point is within 90-180 degrees.
As an improvement of the scheme, the distance between the break point and the top surface of the LED chip is within 10-90 mu m.
As an improvement of the above scheme, a packaging colloid layer is coated on the carrier, and the packaging colloid layer coats the LED chip and the lead.
Drawings
Fig. 1 is a schematic structural diagram of an LED device according to embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of an LED device according to embodiment 2 of the present invention.
Fig. 3 is a schematic structural diagram of an LED device according to embodiment 3 of the present invention.
Fig. 4 is a schematic structural diagram of an LED device according to embodiment 4 of the present invention.
Fig. 5 is a schematic structural diagram of an LED device according to embodiment 5 of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention can be embodied in many other forms without departing from the spirit or essential characteristics thereof, and it should be understood that the invention is not limited to the specific embodiments disclosed below.
The utility model provides a LED device, this LED device includes: the LED chip comprises a carrier, an LED chip positioned on the carrier and a lead wire for connecting the LED chip and the carrier; the electrode of the LED chip is connected with one end of the lead in a bonding mode to form a first bonding point; the carrier is in bonding connection with the other end of the lead to form a second bonding point; stacking a first solder ball on the first bonding point, so that the first bonding point and the first solder ball jointly form a first welding point; the lead is drawn from the first welding point to the second bonding point and forms a folding point, and the included angle at the folding point is an obtuse angle, so that the distance between the folding point and the top surface of the LED chip is smaller than 90 mu m.
Compared with the prior art, the utility model discloses a it has first solder ball to stack up on the first bonding point of LED chip among the LED device for the electrode surface of LED chip is by lower supreme solder ball, lead wire and the solder ball of stacking gradually, and the sandwich formula structure of solder ball clamp fold lead wire about first bonding point and first solder ball constitute jointly on the electrode surface of LED chip promptly, and first bonding point and first solder ball constitute first solder joint jointly. Because the first welding ball is stacked on the first bonding point, the heat affected zone on the first bonding point can be covered, so that the joint of the bonding connection of the lead and the electrode has stronger firmness and reliability, the first bonding point is not easy to crack, and the height of the lead above the first welding point is reduced; meanwhile, because the lead is drawn from the first welding point to the second bonding point to form a break point and the included angle of the break point is an obtuse angle, the height of the lead above the first welding point can be further reduced, so that the distance between the break point and the top surface of the LED chip is smaller than 90 microns, the ultralow wire arc of the lead bonding routing is realized, the thickness of the LED device can be made thinner, and the brightness requirement of the LED device is met.
Wherein, in the utility model discloses an among the LED device, the accessible draws the break point that the lead wire formed to adjust the distance between break point and the LED chip top surface.
Wherein, the utility model discloses a carrier is one in plane base plate, support or the LED module among the LED device, and the LED chip is just adorning type LED chip or perpendicular type LED chip, and the LED chip includes 1 at least, and the LED chip is for establishing ties or parallelly connected.
Preferably, in the embodiment of the present invention, the distance between the break point of the lead above the first solder joint in the LED device and the top surface of the LED chip is between 10 μm and 90 μm.
The technical solution of the present invention is described in detail and fully with reference to the following embodiments and drawings, taking the carrier as a bowl and cup holder as an example.
Example 1
As shown in fig. 1, it is a schematic structural diagram of an LED device according to embodiment 1 of the present invention.
The LED device includes: the LED chip comprises a carrier 1, a forward-mounted LED chip 21 positioned on the carrier 1, and two leads 3 for connecting the forward-mounted LED chip 21 and the carrier 1; the carrier 1 is provided with a first conductive carrier 11, a second conductive carrier 12 and an isolation connecting layer 13, wherein the isolation connecting layer 13 is used for connecting and isolating the first conductive carrier 11 and the second conductive carrier 12; the front-loading type LED chip 21 has two electrodes 211. Two electrodes 211 of the forward-mounted LED chip 21 are respectively bonded to one end of a lead 3 to form a first bonding point 311, and the first conductive carrier 11 and the second conductive carrier 12 are respectively bonded to the other end of the corresponding lead to form a second bonding 321; a first solder ball 312 is stacked on the first bonding point 311, so that the first bonding point 311 and the first solder ball 312 jointly form a first welding point, and the first welding point is of a sandwich structure in which leads are sandwiched by upper and lower solder balls; the lead 3 is drawn from the first bonding point to the second bonding point 321 and forms a break 31, and the included angle at the break 31 is obtuse so that the distance between the break 31 and the top surface of the normal LED chip 21 is less than 90 μm.
Further, in embodiment 1, second solder balls 322 are respectively formed on the second bonding points 321 on the first conductive carrier 11 and the second conductive carrier 12, so that the second bonding points 321 and the second solder balls 322 jointly form a second solder joint, and the second solder joint is a sandwich structure in which upper and lower solder balls sandwich a lead, so that a joint where the lead 3 is bonded and connected with the carrier 1 has stronger firmness and reliability, the second bonding points 321 are made not to crack easily, the strength of the whole lead 3 is increased, the connectivity between the lead 3, the electrode 211 and the carrier 1 in the LED device is improved, so that the routing height of the lead 3 above the second solder joint 321 is reduced, and an ultra-low wire arc of the lead 3 is realized.
Further, in the above embodiment, the LED device further includes: and an adhesive layer 23 disposed between the carrier 1 and the front-mounted LED chip 21 for adhering the front-mounted LED chip 21 to the carrier 1. Preferably, the adhesive layer 23 is made of one of resin, gel, or silicone.
Example 2
As shown in fig. 2, is a schematic structural diagram of an LED device according to embodiment 2 of the present invention.
The LED device includes: a carrier 1, a vertical type LED chip 22 on the carrier 1, and a lead 3 connecting the vertical type LED chip 22 and the carrier 1; wherein the carrier 1 has a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13, and the vertical type LED chip 22 has two electrodes 221. One of the two electrodes 221 is directly connected with the first conductive carrier 11, the other of the two electrodes 221 is bonded and connected with one end of the lead 3 to form a first bonding point 311, and the second conductive carrier 12 is bonded and connected with the other end of the lead 3 to form a second bonding point 321; a first solder ball 312 is stacked on the first bonding point 311, so that the first bonding point 311 and the first solder ball 312 jointly form a first welding point, and the first welding point is of a sandwich structure in which leads are sandwiched by upper and lower solder balls; the lead 3 is drawn from the first bonding pad 311 to the second bonding point 321 and forms a break 31, and the included angle at the break 31 is obtuse so that the distance between the break 31 and the top surface of the vertical LED chip 22 is less than 90 μm.
Further, in embodiment 2, a second solder ball 322 is formed on the second bonding point 321 of the second conductive carrier 12, so that the second bonding point 321 and the second solder ball 322 together form a second solder joint, and the second solder joint is a sandwich structure in which the upper and lower solder balls sandwich the lead, so that the joint where the lead 3 is bonded and connected with the second conductive carrier 12 has stronger firmness and reliability, and the second bonding point 321 is not easy to crack, and the strength of the whole lead is increased, so as to reduce the routing height of the lead 3 on the second bonding point 321.
Example 3
As shown in fig. 3, is a schematic structural diagram of an LED device according to embodiment 3 of the present invention.
The LED device includes: the LED chip packaging structure comprises a carrier 1, at least two forward-mounted LED chips 21 positioned on the carrier 1, and a plurality of leads 3 connecting the carrier 1 and the at least two forward-mounted LED chips 21; wherein the carrier 1 comprises a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13; the at least two forward-mounted LED chips 21 are connected in parallel by the lead 3, so that a first solder joint 312 is formed on each electrode, and a corresponding second solder joint 322 is formed on the first conductive carrier 11 and the second conductive carrier 12.
It can be understood that fig. 3 only illustrates the case where there are two forward-mounted LED chips, and when the number of forward-mounted LED chips exceeds two, the structure of the LED device can be derived from fig. 3, and therefore, the details are not repeated herein.
The utility model discloses an in embodiment 3, be located two at least formal dress type LED chips 21 on the carrier 1 and connect in parallel for two or more formal dress type LED chips 21 have in the LED device, and the volume of LED device can make littleer, thereby improves the luminous flux that the LED device goes out the plain noodles, increases the luminous luminance of LED device.
Example 4
As shown in fig. 4, is a schematic structural diagram of an LED device according to embodiment 4 of the present invention.
The LED device includes: the LED chip packaging structure comprises a carrier 1, at least two forward-mounted LED chips 21 positioned on the carrier 1, and a plurality of leads 3 connecting the carrier 1 and the at least two forward-mounted LED chips 21; wherein the carrier 1 comprises a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13; the at least two forward-mounted LED chips 21 are connected in series by the lead 3, so that a first solder point 312 is formed on each electrode of the at least two forward-mounted LED chips 21, and a second solder point 322 is formed on the first conductive carrier 11 and the second conductive carrier 12, respectively.
It can be understood that fig. 4 only illustrates the case where there are two forward-mounted LED chips, and when the number of forward-mounted LED chips exceeds two, the structure of the LED device can be derived from fig. 4, and therefore, the details are not repeated here.
The utility model discloses an in embodiment 4, be located two at least formal dress type LED chips 21 on the carrier 1 and establish ties for two or more formal dress type LED chips 21 have in the LED device, and the volume of LED device can make littleer, thereby improves the luminous flux that the LED device goes out the plain noodles, increases the luminous luminance of LED device.
Example 5
As shown in fig. 5, is a schematic structural diagram of an LED device according to embodiment 5 of the present invention.
The LED device includes: a carrier 1, at least two vertical type LED chips 22 on the carrier 1, and a plurality of leads 3 connecting the carrier 1 and the at least two vertical type LED chips 22; wherein the carrier 1 comprises a first conductive carrier 11, a second conductive carrier 12 and an isolating connection layer 13; the at least two vertical type LED chips 22 are connected in parallel by the lead 3, so that the first electrodes of the at least two vertical type LED chips 22 are connected to the first conductive carrier 11, a first solder joint 312 is formed on the second electrode of the at least two vertical type LED chips 22, and a corresponding second solder joint 322 is formed on the second conductive carrier 12.
It can be understood that fig. 5 only illustrates the case where there are two vertical LED chips, and when the number of the vertical LED chips exceeds two, the structure of the LED device can be derived from fig. 5, so that the detailed description thereof is omitted here.
The utility model discloses an in embodiment 5, two at least perpendicular type LED chips 22 that are located on carrier 1 are parallelly connected for can set up two or more perpendicular type LED chips 22 in the LED device, and the volume of LED device can make littleer, thereby improves the luminous flux that the LED device goes out the plain noodles, increases the luminous luminance of LED device.
Further, in embodiments 1 to 5 above, the LED device further includes: and the packaging colloid is filled in the bowl of the bowl support to coat the LED chip and the lead.
Further, in the embodiment of the present invention, when there is one LED chip in the LED device, the LED chip is one of a blue LED chip, a green LED chip, a red LED chip, an infrared LED chip and an ultraviolet LED chip; when the LED chips in the LED device comprise at least two LED chips, the at least two LED chips are one or a combination of at least two of a blue LED chip, a green LED chip, a red LED chip, an infrared LED chip and an ultraviolet LED chip.
Further, in an embodiment of the present invention, the lead wire includes one of a gold wire, a silver wire, an aluminum wire, and an alloy wire.
Further, in an embodiment of the present invention, at the first bonding point, an included angle between the lead and its projection on the top surface of the LED chip forms a first included angle, and the first included angle is an acute angle; at the second welding point, the included angle between the lead and the projection of the lead on the carrier forms a second included angle which is an acute angle.
Preferably, in an embodiment of the present invention, the angle of the first included angle is within 0 ° to 60 °, and the angle of the second included angle is within 0 ° to 60 °.
Preferably, in the embodiment of the present invention, the included angle at the folding point is within 90 ° to 180 °.
Preferably, in the embodiment of the present invention, since the first solder ball and the second solder ball are both made of capillary and are made by an arc striking method, and the first solder ball and the second solder ball are made of the same material as the lead, the formation of the first solder ball and the second solder ball does not cause a change in material structure and performance, and a heat affected zone is not formed, so that the first solder joint and the second solder joint have better toughness.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any form, so that any simple modification, equivalent change and modification made by the technical entity of the present invention to the above embodiments without departing from the technical solution of the present invention all fall within the scope of the technical solution of the present invention.
Claims (10)
1. An LED device, comprising: the LED chip comprises a carrier, an LED chip positioned on the carrier and a lead wire for connecting the LED chip and the carrier; wherein,
the electrode of the LED chip is in bonding connection with one end of the lead to form a first bonding point; the carrier is in bonding connection with the other end of the lead to form a second bonding point;
stacking a first solder ball on the first bonding point, so that the first bonding point and the first solder ball jointly form a first welding point;
the lead is drawn from the first welding point to the second bonding point and forms a break point, and the included angle at the break point is a right angle or an obtuse angle, so that the distance between the break point and the top surface of the LED chip is smaller than 90 mu m.
2. The LED device of claim 1 wherein a second solder ball is formed on said second bond site such that said second bond site and said second solder ball together form a second solder joint.
3. The LED device of claim 2, wherein the LED chip comprises a front-loading type LED chip or a vertical type LED chip.
4. The LED device of claim 3, wherein the forward mounted LED chip comprises at least two; the carrier comprises a first conductive carrier and a second conductive carrier; wherein,
the at least two forward-mounted LED chips are connected in parallel through the lead wires, so that one first welding point is formed on each electrode, and at least two second welding points are respectively formed on the first conductive carrier and the second conductive carrier;
or, the at least two forward-mounted LED chips are connected in series through the lead, so that one first solder joint is formed on each electrode of the at least two forward-mounted LED chips, and one second solder joint is formed on each of the first conductive carrier and the second conductive carrier.
5. The LED device of claim 3, wherein the vertical type LED chip comprises at least two; the carrier has a first conductive carrier and a second conductive carrier;
the at least two vertical type LED chips are connected in parallel through the lead wires, so that first electrodes of the at least two vertical type LED chips are connected with the first conductive carrier, each second electrode of the at least two vertical type LED chips is provided with one first welding point, and the second conductive carrier is provided with at least two second welding points.
6. The LED device of any of claims 1-5, wherein the lead at the first bonding site forms a first angle with its projection on the top surface of the LED chip, the first angle being an acute angle.
7. The LED device of claim 2, wherein the lead at the second bond site forms a second angle with its projection on the carrier, the second angle being an acute angle.
8. The LED device according to any one of claims 1 to 5, wherein an angle of an included angle at the inflection point is within a range of 90 ° to 180 °.
9. The LED device of claim 1, wherein the distance between the inflection point and the top surface of the LED chip is within a range of 10 μ ι η to 90 μ ι η.
10. The LED device according to any one of claims 1 to 5, wherein an encapsulating colloid layer is coated on the carrier, and the encapsulating colloid layer covers the LED chip and the lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821644247.7U CN209169184U (en) | 2018-10-10 | 2018-10-10 | A kind of LED component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821644247.7U CN209169184U (en) | 2018-10-10 | 2018-10-10 | A kind of LED component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209169184U true CN209169184U (en) | 2019-07-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821644247.7U Active CN209169184U (en) | 2018-10-10 | 2018-10-10 | A kind of LED component |
Country Status (1)
| Country | Link |
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| CN (1) | CN209169184U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192848A (en) * | 2018-10-10 | 2019-01-11 | 广东晶科电子股份有限公司 | A kind of LED component and its wire bonding method |
-
2018
- 2018-10-10 CN CN201821644247.7U patent/CN209169184U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192848A (en) * | 2018-10-10 | 2019-01-11 | 广东晶科电子股份有限公司 | A kind of LED component and its wire bonding method |
| CN109192848B (en) * | 2018-10-10 | 2024-02-20 | 广东晶科电子股份有限公司 | LED device and wire bonding method thereof |
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