CN105845655B - Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk - Google Patents

Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk Download PDF

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Publication number
CN105845655B
CN105845655B CN201610172241.3A CN201610172241A CN105845655B CN 105845655 B CN105845655 B CN 105845655B CN 201610172241 A CN201610172241 A CN 201610172241A CN 105845655 B CN105845655 B CN 105845655B
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lead
bonding
superposition
ball
microbonding disk
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CN105845655A (en
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罗建强
潘玉华
王辉
文泽海
伍艺龙
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CETC 2 Research Institute
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CETC 2 Research Institute
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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/4814—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate the wire connector connecting to a bonding area protruding from the surface
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48484—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side
    • H01L2224/48488—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball
    • H01L2224/48489—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball on the semiconductor or solid-state body
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/49426—Wedge bonds on the semiconductor or solid-state body
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92127—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a wire connector

Abstract

The invention discloses the method and microbonding disk superposition bonding structure that superposition on a kind of microbonding disk carries out ball-shaped welded, the described method comprises the following steps：Ball is individually planted on the microbonding disk of the second base material, obtains the microbonding disk for including soldered ball；The first lead is bonded with common bonding pattern, one end of the first lead as the second bonding point of the first lead and is bonded on the second bonding point of the first lead by the soldered ball on microbonding disk；The second lead is bonded with common bonding pattern, is bonded in using the second bonding point of the first lead as the second bonding point of the second lead and by one end superposition of the second lead above soldered ball on the second bonding point of the first lead；Repetitive operation is until complete the superposition bonding of last root lead；First bonding point of each lead is located on the microbonding disk of the first base material and the first bonding point is bonded to be independent, and the quantity of lead is at least two and no more than ten.The method that microbonding disk superposition bonding structure carries out ball-shaped welded using superposition on above-mentioned microbonding disk is prepared.

Description

Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk
Technical field
The present invention relates to microelectronics technology, more particularly, is related to one kind and is superimposed using pellet bonding machine on microbonding disk It is bonded the method and bonding structure of at least 2 leads.
Background technology
The pad of semiconductor device chip is less and less, pad single side size via 100 microns be decreased to 30 microns with Under, also referred to as microbonding disk.In addition, in the semiconductor devices interconnection field of the high frequency assemblies such as millimeter wave, microwave, Yin Duogen draws The more single pin interconnection of line, which is bonded with, reduces the advantages such as stray inductance, and 2 leads must be at least bonded in semiconductor devices interconnection. At present, it is common to use manual wedge bonding machine realize single pad at the same time side by side bonding/or superposition bonding 2 pin configurations come realize with Upper function.
The more wedge-shaped weldering bonding technology bonding efficiency of common lead ball bonding bonding technology, reliability are high, are being bonded single draw Wide scope uses in terms of line.Its common bonding pattern be the first solder joint for ball bonding, 2 to 5 times of a diameter of line footpath of soldered ball, the Two solder joints are fish tail shape.
Therefore, the continuous of pad size reduces so that realizing that bonding at the same time is at least on single pad using ball bond and technique The bonding structure of two leads is a problem and huge challenge.
The content of the invention
In order to solve the problems in the existing technology, realized the object of the present invention is to provide one kind using pellet bonding machine micro- The method and superposition bonding structure of at least 2 leads of superposition bonding on pad.
The present invention provides a kind of method that superposition carries out ball-shaped welded on microbonding disk, the described method comprises the following steps：
A, ball is individually planted on the microbonding disk of the second base material, obtains the microbonding disk for including soldered ball；
B, the first lead is bonded with common bonding pattern, wherein, using the soldered ball on the microbonding disk as the first lead One end of first lead is simultaneously bonded on the second bonding point of first lead by the second bonding point；
C, the second lead is bonded with common bonding pattern, wherein, using the second bonding point of first lead as second Second bonding point of lead and the second bonding point that one end superposition of the second lead is bonded in the first lead above the soldered ball On；
D, repetitive operation is until complete the superposition bonding of last root lead；
Wherein, the first bonding point of each lead is located on the microbonding disk of the first base material and first bonding point is independent Bonding, the quantity of lead is at least two and no more than ten.
Superposition carries out one embodiment of the method for ball-shaped welded on microbonding disk according to the present invention, and the method further includes The step of ball is planted in protection is being carried out on first bonding point of last root lead.
Superposition carries out one embodiment of the method for ball-shaped welded on microbonding disk according to the present invention, using manual pellet bonding machine Or full-automatic pellet bonding machine carries out planting ball and wire bonding.
Superposition carries out one embodiment of the method for ball-shaped welded on microbonding disk according to the present invention, and the independent bonding is logical Cross and the more leads realizations of single wire or Combination Welding are welded on single microbonding disk.
Superposition carries out one embodiment of the method for ball-shaped welded, the common key molding on microbonding disk according to the present invention Formula is to be burnt till one end of lead by the method for ultrasound spherical, and one end of the lead is pressed together on to the of heating by chopper At the first bonding point on the microbonding disk of one base material and the first solder joint is formed, first solder joint is spherical bonding；Move afterwards Above chopper to the microbonding disk of the second base material, the other end of lead is bonded in by the micro- of the second base material by the method for ultrasonic thermocompression At the second bonding point on pad and fracture to form the second solder joint, second solder joint is bonded for fish tail shape.
Superposition carries out one embodiment of the method for ball-shaped welded on microbonding disk according to the present invention, the first base material or Second base material is semiconductor devices, ceramic circuit board or organic substrate.
Superposition carries out one embodiment of the method for ball-shaped welded, the list of the microbonding disk on microbonding disk according to the present invention Side size is below 200 microns.
Superposition carries out one embodiment of the method for ball-shaped welded on microbonding disk according to the present invention, and the lead is diameter Copper lead, gold wire, aluminum lead or silver wire below 80 microns.
Superposition carries out one embodiment of the method for ball-shaped welded, the soldered ball or protection on microbonding disk according to the present invention 2~5 times of the diameter of a diameter of lead of soldered ball.
Another aspect provides a kind of microbonding disk to be superimposed bonding structure, and the microbonding disk superposition bonding structure is adopted The method that ball-shaped welded is carried out with superposition on above-mentioned microbonding disk is prepared.
Compared with prior art, superposition carries out the method for ball-shaped welded on microbonding disk of the invention and the superposition of microbonding disk is bonded Structure using pellet bonding machine realize on microbonding disk superposition bonding at least 2 leads, and by protect plant ball protect more leads according to The bonding point of secondary superposition, improves the reliability of single pad stitch welding；In addition, by the bonding structure, identical work(can be merged The microbonding disk of energy, reduces micro- number of pads of input and output, can further reduce die size；The present invention is prepared The destructive testing of superposition bonding structure meet GJB 548B-2005《Microelectronic component Test Methods And Procedures》Method 2011.1 bond strength standard.
Brief description of the drawings
Fig. 1 shows that superposition carries out what ball-shaped welded obtained on semiconductor chip microbonding disk in example 1 according to the present invention The top view of the microbonding disk superposition bonding structure of two leads of superposition.
Fig. 2 shows that superposition carries out what ball-shaped welded obtained on semiconductor chip microbonding disk in example 1 according to the present invention The side view of the microbonding disk superposition bonding structure of two leads of superposition.
Description of reference numerals：
1- semiconductor chips, 2- substrate circuits piece, 3- include microbonding disk, the first leads of 4-, the second leads of 5-, the 6- of soldered ball Ball is planted in protection.
Embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive Feature and/or step beyond, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, summary and attached drawing), except non-specifically chatting State, can be replaced by other alternative features that are equivalent or have similar purpose.I.e., unless specifically stated, each feature It is an example in a series of equivalent or similar characteristics.
Below will to the present invention microbonding disk on superposition carry out ball-shaped welded method and microbonding disk be superimposed bonding structure into Row detailed description.
Exemplary embodiment according to the present invention, on the microbonding disk superposition carry out ball-shaped welded method include it is following more A step.
Step A：
Ball is individually planted on the microbonding disk of the second base material, obtains the microbonding disk for including soldered ball.
Wherein it is possible to plant ball is carried out using manual pellet bonding machine or full-automatic pellet bonding machine.
Second base material can be semiconductor devices (such as Si bases, GaAs bases, GaN base), ceramic circuit board (such as make pottery by film Porcelain circuit, thick film ceramic circuit, LTCC etc.) or any base material such as organic substrate (such as PCB, printed circuit, plastic basis material), and Microbonding disk thereon can be prepared based on any of the above described base material.
The purpose for carrying out planting ball on microbonding disk in advance is to protect the second base material (such as semiconductor element) not to be damaged And increase bonding pad area.And can carry out the automation of this step using automatic pellet bonding machine, there is very strong popularization applicability.
Step B：
The first lead is bonded with common bonding pattern, wherein, the using the soldered ball on the microbonding disk as the first lead One end of first lead is simultaneously bonded on the second bonding point of first lead by two bonding points.
Wherein, the second bonding point is the concept for the first bonding point, and the second bonding point is index wire and second The position of base material solder bonds, the first bonding point are the positions of index wire and the first base material solder bonds.Specifically, can be direct One end of first lead is bonded on the soldered ball on microbonding disk.
When carrying out wire bonding, similarly manual pellet bonding machine or full-automatic pellet bonding machine can be used to carry out.
Step C：
The second lead is bonded with common bonding pattern, wherein, the second bonding point of first lead is drawn as second One end superposition of second lead is simultaneously bonded in above the soldered ball on the second bonding point of the first lead by the second bonding point of line.
Since the present invention needs the more leads of superposition bonding on microbonding disk, it is therefore desirable to which the optimum way of selective stacking is simultaneously Ensure the intensity of bonding.In accordance with the present invention it is preferred that directly using the second bonding point of the first lead as the second of the second lead Bonding point, so as to which directly one end superposition of the second lead is bonded on the second bonding point of the first lead, is achieved in Effective superposition bonding of two leads on microbonding disk.
Step D：
Repetitive operation is until complete the superposition bonding of last root lead.Wherein, the quantity of lead is at least two and not More than ten.
According to the present invention, the first bonding point of each lead such as above-mentioned first lead, second lead is located at the micro- of the first base material On pad and first bonding point is bonded to be independent.Welded as described above, the first bonding point is index wire with the first base material The position of bonding, by lead both ends respectively with the first base material and the solder bonds of the second base material, so as to fulfill such as chip with The information mutual communication between electric interconnection or chip between substrate.Specifically, above-mentioned independent bonding can be by single microbonding More leads of single wire or Combination Welding are welded on disk to realize.Second base material can also be semiconductor devices (such as Si bases, GaAs bases, GaN base etc.), ceramic circuit board (such as thin-film ceramics circuit, thick film ceramic circuit, LTCC) or organic substrate is (such as PCB, printed circuit, plastic basis material etc.) etc. any base material, and microbonding disk thereon can be prepared into based on any of the above described base material Arrive.
According to the present invention, above-mentioned common bonding pattern is specially：One end of lead is burnt till by ball by the method for ultrasound Shape, at the first bonding point on the microbonding disk for the first base material that one end of lead is pressed together on to heating by chopper and forms first Solder joint, first solder joint are spherical bonding；Move afterwards above chopper to the microbonding disk of the second base material, pass through the side of ultrasonic thermocompression At the second bonding point that the other end of lead is bonded on the microbonding disk of the second base material by method and fracture to form the second solder joint, this Two solder joints are bonded for fish tail shape.That is, in the present invention, one end of the first lead burnt till by the method for ultrasound spherical, led to Cross on a microbonding disk of the first base material that one end of the first lead is pressed together on heating by chopper and form the first solder joint, this first Solder joint is spherical bonding, wherein, the first solder joint is formation after the first bonding point being welded to the first lead in the first base material 's；Afterwards, above mobile chopper to the microbonding disk of the second base material, by the method for ultrasonic thermocompression by the other end key of the first lead Close on the microbonding disk including soldered ball of the second base material and fracture to form the second solder joint, which is bonded for fish tail shape, its In, the second solder joint is shape after the second bonding point being welded to the first lead on the microbonding disk including soldered ball in the second base material Into.It is also so to operate for the second lead, simply the second key using the second bonding point of the first lead as the second lead One end superposition of second lead is simultaneously bonded in above soldered ball on the second bonding point of the first lead i.e. achievable superposition weldering by chalaza Connect, and so on, realize that the superposition of more leads is bonded and obtains microbonding disk superposition bonding structure.
It is highly preferred that this method also includes carrying out the step of ball is planted in protection on the first bonding point of last root lead, So as to obtain including protecting the microbonding disk of soldered ball to be superimposed bonding structure.In fact, ball is planted in protection can play increase superposition bonding The effect of reliability of structure simultaneously protects more stitch welding lead solder-joint, and then realizes the knot of the more leads of stitch welding on microbonding disk Structure, in fact, the basic superposition bonding structure of the present invention can also be realized by planting ball even if unprotect.
The single side size of microbonding disk on exemplary embodiment according to the present invention, the first base material or the second base material is 200 Micron is following, such as can be 30,50,80,120,200 microns of equidimensions.Also, lead can be copper lead, gold wire, aluminium Any metal lead wire such as lead or silver wire, and the diameter of lead is below 80 microns, for example, can be 12,18,25,40, 80 microns of equidimensions.In addition, 2~5 times of the diameter of a diameter of lead of soldered ball or protection soldered ball, for example, for commonly using diameter For 25 microns of lead, its soldered ball or the diameter for protecting soldered ball can be 60 microns.
That is, bonding at least two leads can be superimposed on the microbonding disk of semiconductor devices using the above method and obtained Microbonding disk is superimposed bonding structure, and the microbonding disk superposition bonding structure of the present invention is then to carry out ball using superposition on above-mentioned microbonding disk The method of shape welding is prepared.The destructive testing of the superposition bonding structure meets GJB 548B-2005《Microelectronic component tries Test methods and procedures》2011.1 bond strength standard of method.
With reference to specific example, the invention will be further described.
Example 1：
Fig. 1 shows that superposition carries out what ball-shaped welded obtained on semiconductor chip microbonding disk in example 1 according to the present invention The top view of the microbonding disk superposition bonding structure of two leads of superposition, Fig. 2 are shown in example 1 according to the present invention in semiconductor core Superposition carries out the side view of the microbonding disk superposition bonding structure of two leads of superposition that ball-shaped welded obtains on piece microbonding disk.
As depicted in figs. 1 and 2, ball is individually planted on the microbonding disk first on semiconductor chip 1, acquisition includes the micro- of soldered ball Pad 3；First lead 4 is bonded using common bonding pattern, wherein, one end of the first lead 4 is bonded to as the first lead 4 The second bonding point soldered ball on, wherein, microbonding disk plant ball and be bonded the first lead two steps can be in automatic pellet bonding machine In directly using Pre-Wire patterns realize；Then the second lead is equally bonded using common bonding pattern, wherein, second is drawn On second bonding point of the first lead 4 that one end superposition of line 5 is bonded to the second bonding point as the second lead 5；Due to only There are two leads, so protection is directly carried out above the second bonding point of the second lead 5 plants ball, obtain protection and plant ball 6, and then Obtain microbonding disk superposition bonding structure.Wherein, two steps for being bonded the second lead and carrying out protection plant ball can be in automatic ball Directly realized in welding machine using Post-Wire patterns.Also, the first bonding point of the first lead 4 and the second lead 5 is arranged at On substrate circuit piece 2, and independent ball is realized by welding single wire on the single microbonding disk on substrate circuit piece 2 respectively Shape is bonded.
In conclusion superposition carries out the method and microbonding disk superposition bonding structure profit of ball-shaped welded on the microbonding disk of the present invention Superposition bonding at least 2 leads on solder pad of semiconductor device are realized with pellet bonding machine, and by protecting plant ball to protect more leads The bonding point being sequentially overlapped, improves the reliability of single pad stitch welding；In addition, by the bonding structure, can merge identical The microbonding disk of function, reduces micro- number of pads of input and output, can further reduce die size；The present invention is prepared into To the destructive testing of superposition bonding structure meet GJB 548B-2005《Microelectronic component Test Methods And Procedures》Method 2011.1 bond strength standard.
The invention is not limited in foregoing embodiment.The present invention, which expands to, any in the present specification to be disclosed New feature or any new combination, and disclose any new method or process the step of or any new combination.

Claims (9)

1. a kind of method that superposition carries out ball-shaped welded on microbonding disk, it is characterised in that the described method comprises the following steps：
A, ball is individually planted on the microbonding disk of the second base material, obtains the microbonding disk for including soldered ball；
B, the first lead is bonded with common bonding pattern, wherein, using the soldered ball on the microbonding disk as the second of the first lead One end of first lead is simultaneously bonded on the second bonding point of first lead by bonding point；
C, the second lead is bonded with common bonding pattern, wherein, using the second bonding point of first lead as the second lead The second bonding point and the superposition of one end of the second lead is bonded in above the soldered ball on the second bonding point of the first lead；
D, repetitive operation until complete last root lead superposition bonding and it is enterprising in the second bonding point of last root lead Row protection plants ball and forms protection soldered ball；
Wherein, the first bonding point of each lead is located on the microbonding disk of the first base material and first bonding point is independent keys Close, the quantity of lead is at least two and no more than ten.
2. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that use manual ball Welding machine or full-automatic pellet bonding machine carry out planting ball and wire bonding.
3. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the independent keys Close and realized by welding more leads of single wire or Combination Welding on single microbonding disk.
4. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the common key Syntype is spherical to be burnt till one end of lead by the method for ultrasound, and one end of the lead is pressed together on heating by chopper The first base material microbonding disk on the first bonding point at and formed the first solder joint, first solder joint is spherical bonding；Afterwards Above mobile chopper to the microbonding disk of the second base material, the other end of lead is bonded in by the second base material by the method for ultrasonic thermocompression Microbonding disk on the second bonding point at and fracture to form the second solder joint, second solder joint be fish tail shape bonding.
5. the method that superposition carries out ball-shaped welded on the microbonding disk according to claim 1,3 or 4, it is characterised in that described The first base material or the second base material are semiconductor devices, ceramic circuit board or organic substrate.
6. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the microbonding disk Single side size below 200 microns.
7. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the lead is Copper lead, gold wire, aluminum lead or silver wire of the diameter below 80 microns.
8. on microbonding disk according to claim 1 superposition carry out ball-shaped welded method, it is characterised in that the soldered ball or Protect the diameter of a diameter of lead of soldered ball 2~5 times.
9. a kind of microbonding disk is superimposed bonding structure, it is characterised in that the microbonding disk superposition bonding structure using claim 1 to The method of superposition progress ball-shaped welded is prepared on microbonding disk any one of 8.
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CN1670935A (en) * 2004-03-18 2005-09-21 株式会社电装 Wire bonding method and semiconductor device
CN101114628A (en) * 2006-07-27 2008-01-30 富士通株式会社 Semiconductor device and manufacturing method for the same
CN103035546A (en) * 2012-12-18 2013-04-10 可天士半导体（沈阳）有限公司 Small-size bonding point double-line bonding method

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CN1670935A (en) * 2004-03-18 2005-09-21 株式会社电装 Wire bonding method and semiconductor device
CN101114628A (en) * 2006-07-27 2008-01-30 富士通株式会社 Semiconductor device and manufacturing method for the same
CN103035546A (en) * 2012-12-18 2013-04-10 可天士半导体（沈阳）有限公司 Small-size bonding point double-line bonding method

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