CN105837224A - 一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 - Google Patents
一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 Download PDFInfo
- Publication number
- CN105837224A CN105837224A CN201610374803.2A CN201610374803A CN105837224A CN 105837224 A CN105837224 A CN 105837224A CN 201610374803 A CN201610374803 A CN 201610374803A CN 105837224 A CN105837224 A CN 105837224A
- Authority
- CN
- China
- Prior art keywords
- nitride ceramics
- aluminium nitride
- ammonium fluoride
- aluminum nitride
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 59
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000000654 additive Substances 0.000 title claims abstract description 14
- 230000000996 additive effect Effects 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title abstract description 16
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title abstract 10
- 238000005245 sintering Methods 0.000 claims abstract description 54
- 239000000843 powder Substances 0.000 claims abstract description 47
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 19
- 239000010431 corundum Substances 0.000 claims abstract description 17
- 239000011812 mixed powder Substances 0.000 claims abstract description 16
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 16
- 238000000280 densification Methods 0.000 claims abstract description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 77
- 229910017083 AlN Inorganic materials 0.000 claims description 76
- 239000002245 particle Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 10
- 230000014759 maintenance of location Effects 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 18
- 229910017109 AlON Inorganic materials 0.000 abstract description 9
- 238000000227 grinding Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000004321 preservation Methods 0.000 abstract description 2
- 238000005303 weighing Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000012071 phase Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 239000008187 granular material Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
- C04B2235/445—Fluoride containing anions, e.g. fluosilicate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
本发明公开的氮化铝陶瓷的制备方法,是一种以氟化铵为添加剂的氮化铝陶瓷的制备方法,具体是:将氟化铵粉体和氮化铝粉体按质量配比(0.24~0.36):1分别称量,然后在刚玉研钵中充分研磨均匀,得到混合粉料;将制得的混合粉料装入模具中,再将模具置于等离子活化烧结炉中,在烧结温度1600~1800℃、保温时间3~5min、烧结压力30~40MPa和氮气气氛下进行致密化,最后得到氮化铝陶瓷。本发明采用氟化铵作为添加剂,克服了现有氧化物添加剂在氮化铝陶瓷烧结过程中引入新杂质的技术难题,在烧结过程中可有效减少AlON等杂相的生成,而又不引入其它杂质,同时也能促进陶瓷致密化,因而能够获得具有较高纯度和高致密度的氮化铝陶瓷。
Description
技术领域
本发明涉及氮化铝陶瓷的纯化烧结技术,具体是一种以氟化铵为添加剂的氮化铝陶瓷的制备方法。
背景技术
近年来,氮化铝(AlN)陶瓷因其高热导率、高绝缘性、低介电常数和介电损耗、良好的机械性能且与半导体材料相匹配的热膨胀系数等优异性能,成为新一代绝缘散热封装材料和半导体基片材料的首选,而只有高纯度、高致密度的AlN陶瓷才具有优异的综合性能。然而,一方面,由于氮化铝中的Al-N键具有较高的共价键成分,熔点高,自扩散系数小,烧结活性低,导致氮化铝粉末难以烧结致密化。另一方面,由于AlN极易水解形成Al2O3,这些Al2O3进入AlN晶格后形成AlON杂相(如Al9O3N7、Al7O3N5、Al5O6N等),导致材料性能下降,这都在一定程度上限制了氮化铝陶瓷的应用。
为此,除了选用高纯原料并严格控制原料粉末的保存条件以外,人们通常在烧结过程中添加稀土金属、碱土金属或碱金属等的氧化物(如Y2O3、CaO、Li2O等),来减少或去除氮化铝陶瓷中的AlON杂相。这些添加剂在烧结过程中可与AlN粉体中的Al2O3杂质反应形成液相物质,能有效地避免氧原子在AlN晶格中的固溶,且这些液相物质填充入AlN晶界之间,提高了烧结体的致密度。但是,烧结过程中形成的这些反应物难以排出,容易在AlN晶界处堆积,即又会引入新的杂质,因而会影响AlN陶瓷的性能。
发明内容
本发明的目的是克服现有氧化物添加剂在AlN陶瓷烧结过程中引入新杂质的技术难题,采用氟化铵(NH4F)作为添加剂,来减少AlN陶瓷中的AlON杂相,而又不引入其它杂质,同时促进AlN陶瓷的致密化。
本发明为实现上述目的,采用以下的技术方案:
本发明提供的氮化铝陶瓷的制备方法,是一种以氟化铵为添加剂的氮化铝陶瓷的制备方法,具体是:将氟化铵粉体和氮化铝粉体按质量配比(0.24~0.36):1分别称量,然后在刚玉研钵中充分研磨均匀,得到混合粉料;将制得的混合粉料装入模具中,再将模具置于等离子活化烧结炉中,在烧结温度1600~1800℃、保温时间3~5min、烧结压力30~40MPa和氮气气氛下进行致密化,最后得到氮化铝陶瓷。
所述的氟化铵粉体为分析纯的氟化铵。
所述的氮化铝粉体的粒径为0.5μm。
上述方法中,可以将氟化铵粉体和氮化铝粉体置于刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.8μm的混合粉料。
本发明制备的氮化铝陶瓷,其致密度为98.2%-99.5%,其氧含量为1.23%-0.55%。
本发明中,将NH4F作为添加剂用于AlN陶瓷的烧结,其作用是去除原料粉体中的氧化物杂质,得到高纯度、高致密度的烧结体。在烧结前期的低温阶段,NH4F分解生成HF与NH3,而HF在830℃之前可与AlN中的Al2O3杂质反应生成AlF3;在烧结中期,当温度升高至1200℃左右时,这些AlF3由固态转变为液态,而液态AlF3能有效包覆AlN晶粒,并与另一分解产物NH3反应生成AlN,沉积在被包覆的AlN晶粒上,促进陶瓷致密化;在烧结后期,随着温度的继续升高,剩余的液态AlF3转变为气态排出。
本发明与现有技术相比,具有以下主要的优点:
(1)可避免AlON杂相的生成。
NH4F的分解产物可与AlN中的Al2O3杂质反应,能有效地去除样品中的氧,避免AlON杂相的生成。
(2)可提高产品的纯度。
采用NH4F作为添加剂不会引入其它杂质,因为生成的中间产物AlF3最终可转变为气态排出,避免了现有稀土或碱土金属氧化物添加剂引入其它杂质的问题。无明显氧化物杂质,纯度高。
(3)可促进AlN陶瓷的致密化。
采用该方法制得的氮化铝陶瓷,晶粒间结合良好,致密度高。
总之,本发明采用NH4F作为添加剂,能有效地去除样品中的氧,避免AlON杂相的生成,而且克服了现有氧化物添加剂在AlN陶瓷烧结过程中引入新杂质的问题,提高产品的纯度,并能促进AlN陶瓷的致密化。
附图说明
图1为原料粉体与添加不同配比NH4F的氮化铝陶瓷的X射线衍射物相分析结果。
图2为原料粉体与添加不同配比NH4F的氮化铝陶瓷的氮氧含量测试结果。
图3为未添加NH4F的氮化铝陶瓷的扫描电镜断面形貌图。
图4为本发明实施例4添加NH4F的氮化铝陶瓷的扫描电镜断面形貌图。
图5为本发明实施例1、3、5氮化铝陶瓷的X射线衍射物相分析结果。
具体实施方式
为更好地理解本发明,下面结合实施例进一步阐明本发明的内容,但本发明的内容不仅仅局限于下面的实施例。
实施例1:
将氟化铵晶体颗粒置于刚玉研钵中研磨,得到颗粒细小均匀的氟化铵粉体,其粒径为1.9μm;将氟化铵粉体与粒径为0.5μm的氮化铝粉体按照质量配比0.24:1混合,在刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.8μm的混合粉料;将混合粉料装入高温石墨模具中,并将模具置于等离子活化烧结炉中进行烧结,烧结条件是:烧结温度1600℃、保温时间4min、烧结压力40MPa、烧结气氛为氮气,最终得到的样品是氮化铝陶瓷。
经阿基米德排水法检测,所得到的氮化铝陶瓷样品的致密度为98.2%,使用氧氮氢联合测定仪测得其氧含量为1.23%。
实施例2:
将氟化铵晶体颗粒置于刚玉研钵中研磨,得到颗粒细小均匀的氟化铵粉体,其粒径为1.7μm;将氟化铵粉体与粒径为0.5μm的氮化铝粉体按照质量配比0.24:1混合,在刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.6μm的混合粉料;将粉料装入高温石墨模具中,并将模具置于等离子活化烧结炉中进行烧结,烧结条件是:烧结温度1800℃、保温时间3min、烧结压力35MPa、烧结气氛为氮气,最终得到的样品是氮化铝陶瓷。
经阿基米德排水法检测,所得到的氮化铝陶瓷样品的致密度为99.3%,使用氧氮氢联合测定仪测得其氧含量为0.97%。
实施例3:
将氟化铵晶体颗粒置于刚玉研钵中研磨,得到颗粒细小均匀的氟化铵粉体,其粒径为1.9μm;将氟化铵粉体与粒径为0.5μm的氮化铝粉体按照质量配比0.30:1混合,在刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.8μm的混合粉料;将粉料装入高温石墨模具中,并将模具置于等离子活化烧结炉中进行烧结,烧结条件是:烧结温度1600℃、保温时间5min、烧结压力30MPa、烧结气氛为氮气,最终得到的样品是氮化铝陶瓷。
经阿基米德排水法检测,所得到的氮化铝陶瓷样品的致密度为98.4%,使用氧氮氢联合测定仪测得其氧含量为0.60%。
实施例4:
将氟化铵晶体颗粒置于刚玉研钵中研磨,得到颗粒细小均匀的氟化铵粉体,其粒径为1.8μm;将氟化铵粉体与粒径为0.5μm的氮化铝粉体按照质量配比0.30:1混合,在刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.7μm的混合粉料;将粉料装入高温石墨模具中,并将模具置于等离子活化烧结炉中进行烧结,烧结条件是:烧结温度1700℃、保温时间3min、烧结压力40MPa、烧结气氛为氮气,最终得到的样品是氮化铝陶瓷。
经阿基米德排水法检测,所得到的氮化铝陶瓷样品的致密度为98.9%,使用氧氮氢联合测定仪测得其氧含量为0.58%。
实施例5:
将氟化铵晶体颗粒置于刚玉研钵中研磨,得到颗粒细小均匀的氟化铵粉体,其粒径为1.6μm;将氟化铵粉体与粒径为0.5μm的氮化铝粉体按照质量配比0.36:1混合,在刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.5μm的混合粉料;将粉料装入高温石墨模具中,并将模具置于等离子活化烧结炉中进行烧结,烧结条件是:烧结温度1800℃、保温时间4min、烧结压力30MPa、烧结气氛为氮气,最终得到的样品是氮化铝陶瓷。
经阿基米德排水法检测,所得到的氮化铝陶瓷样品的致密度为99.5%,使用氧氮氢联合测定仪测得其氧含量为0.55%。
实施例6:
将氟化铵晶体颗粒置于刚玉研钵中研磨,得到颗粒细小均匀的氟化铵粉体,其粒径为1.5μm;将氟化铵粉体与粒径为0.5μm的氮化铝粉体按照质量配比0.36:1混合,在刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.4μm的混合粉料;将粉料装入高温石墨模具中,并将模具置于等离子活化烧结炉中进行烧结,烧结条件是:烧结温度1700℃、保温时间5min、烧结压力35MPa、烧结气氛为氮气,最终得到的样品是氮化铝陶瓷。
经阿基米德排水法检测,所得到的氮化铝陶瓷样品的致密度为98.7%,使用氧氮氢联合测定仪测得其氧含量为0.56%。
原料粉体与添加不同配比NH4F后的氮化铝陶瓷的X射线衍射物相分析结果如图1所示。图中显示,AlN原料粉体中有少量Al2O3杂质,导致直接烧结后的氮化铝陶瓷中生成大量Al7O3N5杂质;随着NH4F添加量的增加,氮化铝陶瓷中的Al7O3N5杂质逐渐减少,并转变为Al5O6N;当NH4F添加量为0.24时,AlON杂质消失。
氮化铝陶瓷中的氧氮含量随NH4F添加量的变化如图2所示。图中显示,随着NH4F添加量的增加,氮含量逐渐升高,而氧含量不断降低。当NH4F添加量达0.24以上时,氮化铝陶瓷中的氧氮含量接近理论值。
未添加NH4F的氮化铝陶瓷的断面形貌如图3所示,该陶瓷中含有大量片层状Al7O3N5杂质。实施例4添加NH4F的氮化铝陶瓷的断面形貌如图4所示,可以看出该陶瓷中已无片层状AlON杂质存在,而且AlN晶粒间排布紧密,界面清晰、洁净。
本发明实施例1、实施例3、实施例5氮化铝陶瓷的X射线衍射物相分析结果如图5所示,显示这些陶瓷材料均为纯AlN相。
Claims (5)
1.一种氮化铝陶瓷的制备方法,其特征是一种以氟化铵为添加剂的氮化铝陶瓷的制备方法,具体是:将氟化铵粉体和氮化铝粉体按质量配比(0.24~0.36):1分别称量,然后在刚玉研钵中充分研磨均匀,得到混合粉料;将制得的混合粉料装入模具中,再将模具置于等离子活化烧结炉中,在烧结温度1600~1800℃、保温时间3~5min、烧结压力30~40MPa和氮气气氛下进行致密化,最后得到氮化铝陶瓷。
2.根据权利要求1所述的氮化铝陶瓷的制备方法,其特征在于所述的氟化铵粉体为分析纯的氟化铵。
3.根据权利要求1所述的氮化铝陶瓷的制备方法,其特征在于所述的氮化铝粉体的粒径为0.5μm。
4.根据权利要求1所述的氮化铝陶瓷的制备方法,其特征是将氟化铵粉体和氮化铝粉体置于刚玉研钵中充分研磨均匀,得到粒径范围为0.5-1.8μm的混合粉料。
5.根据权利要求1至4中任一所述的氮化铝陶瓷的制备方法,其特征是所得到氮化铝陶瓷,其致密度为98.2%-99.5%,其氧含量为1.23%-0.55%。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610374803.2A CN105837224B (zh) | 2016-05-31 | 2016-05-31 | 一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610374803.2A CN105837224B (zh) | 2016-05-31 | 2016-05-31 | 一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105837224A true CN105837224A (zh) | 2016-08-10 |
CN105837224B CN105837224B (zh) | 2019-01-01 |
Family
ID=56595291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610374803.2A Expired - Fee Related CN105837224B (zh) | 2016-05-31 | 2016-05-31 | 一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105837224B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109467064A (zh) * | 2017-09-07 | 2019-03-15 | 河北高富氮化硅材料有限公司 | 一种致密形貌氮化铝粉体的制备方法 |
CN115215663A (zh) * | 2022-07-19 | 2022-10-21 | 武汉理工大学 | 一种高致密纯相CrN陶瓷的制备方法 |
CN115353145A (zh) * | 2022-08-26 | 2022-11-18 | 中国矿业大学 | 一种利用真空等离子场辅助溶胶-凝胶技术制备Sn:(Ba,Ca)TiO3粉体的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1203898A (zh) * | 1998-07-08 | 1999-01-06 | 中国科学院上海硅酸盐研究所 | 氮化铝陶瓷的低温烧结 |
CN1296932A (zh) * | 2000-12-08 | 2001-05-30 | 黑龙江省锐克复合材料有限公司 | 低含量氮化铝陶瓷粉末制备方法 |
CN1371885A (zh) * | 2002-04-01 | 2002-10-02 | 武汉理工大学 | 放电等离子烧结法制备氮化铝透明陶瓷 |
CN101885478A (zh) * | 2009-05-14 | 2010-11-17 | 湖南大学 | 一种氮化铝粉的微波合成方法 |
CN105399065A (zh) * | 2015-12-04 | 2016-03-16 | 烟台同立高科新材料股份有限公司 | 一种高质量低氧低铁氮化铝粉末的合成方法 |
-
2016
- 2016-05-31 CN CN201610374803.2A patent/CN105837224B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1203898A (zh) * | 1998-07-08 | 1999-01-06 | 中国科学院上海硅酸盐研究所 | 氮化铝陶瓷的低温烧结 |
CN1296932A (zh) * | 2000-12-08 | 2001-05-30 | 黑龙江省锐克复合材料有限公司 | 低含量氮化铝陶瓷粉末制备方法 |
CN1371885A (zh) * | 2002-04-01 | 2002-10-02 | 武汉理工大学 | 放电等离子烧结法制备氮化铝透明陶瓷 |
CN101885478A (zh) * | 2009-05-14 | 2010-11-17 | 湖南大学 | 一种氮化铝粉的微波合成方法 |
CN105399065A (zh) * | 2015-12-04 | 2016-03-16 | 烟台同立高科新材料股份有限公司 | 一种高质量低氧低铁氮化铝粉末的合成方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109467064A (zh) * | 2017-09-07 | 2019-03-15 | 河北高富氮化硅材料有限公司 | 一种致密形貌氮化铝粉体的制备方法 |
CN115215663A (zh) * | 2022-07-19 | 2022-10-21 | 武汉理工大学 | 一种高致密纯相CrN陶瓷的制备方法 |
CN115353145A (zh) * | 2022-08-26 | 2022-11-18 | 中国矿业大学 | 一种利用真空等离子场辅助溶胶-凝胶技术制备Sn:(Ba,Ca)TiO3粉体的方法 |
CN115353145B (zh) * | 2022-08-26 | 2023-11-24 | 中国矿业大学 | 一种利用真空等离子场辅助溶胶-凝胶技术制备Sn:(Ba,Ca)TiO3粉体的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105837224B (zh) | 2019-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11542204B2 (en) | Method for producing non-oxide ceramic powders | |
Cao et al. | . alpha.'-Sialon ceramics: a review | |
EP3892601A9 (en) | Rare earth tantalate ceramic resisting corrosion of low melting point oxide and preparation method therefor | |
JP5836522B2 (ja) | 窒化ケイ素基板の製造方法 | |
CN105837224A (zh) | 一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 | |
CN110483060A (zh) | 一种高热导率氮化硅陶瓷及其制备方法 | |
CN108863395B (zh) | 一种高热导率、高强度氮化硅陶瓷材料及其制备方法 | |
KR100500495B1 (ko) | 질화알루미늄질 세라믹스, 반도체 제조용 부재 및 내식성 부재 | |
EP3560904B1 (en) | Oriented aln sintered body, and production method therefor | |
JPH1192229A (ja) | 高熱伝導性窒化アルミニウム焼結体の製造方法 | |
JP2001158660A (ja) | 透光性希土類アルミニウムガーネット焼結体及びその製造方法 | |
JP2002220282A (ja) | 窒化アルミニウム焼結体とその製造方法 | |
CN105622108B (zh) | 一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 | |
JP2003226580A (ja) | 窒化アルミニウム質セラミックスおよび半導体製造用部材 | |
CN109678504B (zh) | 一种二价镁离子掺杂钽酸钇高温陶瓷及其制备方法 | |
JP2000327424A (ja) | 窒化アルミニウム基焼結体とその製造方法及びそれを用いたサセプター | |
JP2006347829A (ja) | 珪酸ジルコニウム焼結体およびその製造方法 | |
JP4181359B2 (ja) | 窒化アルミニウム焼結体、及びその製造方法、並びに窒化アルミニウム焼結体を用いた電極内蔵型サセプタ | |
KR100394523B1 (ko) | 질화 알루미늄 분말의 제조방법 | |
JP2000026166A (ja) | 高純度窒化珪素質耐食性部材及びその製造方法 | |
KR101884979B1 (ko) | 질화알루미늄의 제조방법 및 이에 의하여 제조된 질화알루미늄 | |
EP0150180A1 (en) | PROCESS FOR PRODUCING AN OXYNITRIDE / Si 3? N 4? DENSIFIED WITH PREMIXED OXYGEN AND SILICON CARRIERS. | |
CN117947520A (zh) | 一种以粉末氧化镓为原料化学气相沉积制备块体氮化镓的方法 | |
JP5400363B2 (ja) | 酸化マグネシウム−スピネル複合酸化物の製造方法 | |
CN111792941A (zh) | 氮化硅陶瓷基板上围坝的烧结焊接方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190101 |
|
CF01 | Termination of patent right due to non-payment of annual fee |