CN105622108B - 一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 - Google Patents
一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 Download PDFInfo
- Publication number
- CN105622108B CN105622108B CN201510992173.0A CN201510992173A CN105622108B CN 105622108 B CN105622108 B CN 105622108B CN 201510992173 A CN201510992173 A CN 201510992173A CN 105622108 B CN105622108 B CN 105622108B
- Authority
- CN
- China
- Prior art keywords
- tin
- tio
- tri compound
- compound powders
- situ
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/591—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by reaction sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/428—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/46—Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
Abstract
本发明是一种原位合成Si3N4‑Si2N2O‑TiN三元复合粉体的方法。本发明以Si粉、钛酸丁酯为原料,按Si:钛酸丁酯的质量分数比为48~96%:4~52%的配比经混料、干燥,获得Si‑TiO2复合粉体,Si和TiO2的质量分数比为80~99%:1~20%,将复合粉体干压成型,放入气氛炉中进行氮化,氮化温度为1300‑1450℃,时间为0.5~20h,氮化过程气氛为1atm的氮气,通过原位反应合成Si3N4‑Si2N2O‑TiN三元复合粉体,Si3N4:Si2N2O:TiN质量分数比为57~98%:1.5~33%:0.5~10%。本发明加快Si粉的氮化、促进形成高性能Si2N2O相、形成均匀分布且粒径细小TiN相,显著改善Si3N4陶瓷性能。
Description
技术领域
本发明涉及复合陶瓷材料领域,具体公开了一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法。
背景技术
作为结构陶瓷,Si3N4陶瓷具有高韧性、耐高温、高导热等优异性能,高温稳定性、抗氧化性能和耐磨性能较低。与Si3N4相比,Si2N2O具有较高的高温稳定性和抗氧化性能,TiN具有较高的硬度、耐磨性能和导电性能。因此,将Si2N2O和TiN作为第二相,加入到Si3N4陶瓷,可以显著改善其高温稳定性、耐磨性能、抗热震性能、导电性能。
目前,主要通过在原料加入SiO2相,原位反应生成Si2N2O相;通过直接加入TiN,或者加入TiO2,通过原位反应合成TiN。均存在SiO2和TiO2易团聚和难分散问题,导致Si2N2O和TiN相不能在Si3N4陶瓷中均匀细小分布。
发明内容
本发明的目的在于克服上述缺点而提供一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法。本发明的Si2N2O和TiN相在Si3N4陶瓷中均匀细小分布,粒径细小,显著改善Si3N4陶瓷性能,且制作成本低。
本发明通过以下技术方案予以实现:
本发明的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,包括如下步骤:
(1)以Si粉、钛酸丁酯为原料,按Si:钛酸丁酯的质量分数比为48~96%:4~52%的配比经混料、干燥,获得Si-TiO2复合粉体;
(2)将Si-TiO2复合粉体干压成型,放入气氛炉中进行氮化,通过原位反应合成Si3N4-Si2N2O-TiN三元复合粉体。
上述步骤(1)获得的Si-TiO2复合粉体中,Si和TiO2的质量分数比为80~99%:1~20%
上述步骤(1)的Si粉纯度为95~100%,粒径为<10μm,钛酸丁酯纯度为98~100%。
上述步骤(1)中,以无水乙醇为溶剂,以Si3N4球为球磨介质,在球磨机上球磨4~48h,干燥后过筛得到Si-TiO2复合粉体。
上述步骤(1)中,在行星球磨机上球磨12h。
上述步骤(1)中,Si和TiO2的质量分数比为92%:8%。
上述步骤(2)的氮化工艺为:将Si-TiO2坯体放入石墨坩埚,将温度升至1300~1450℃,并保温,气氛为氮气,获得Si3N4-Si2N2O-TiN三元复合粉体。
上述氮化工艺中,以5-20℃/min的升温速率将温度升至1300~1450℃,并保温0.5~20h,气氛为1atm的氮气,获得Si3N4-Si2N2O-TiN三元复合粉体。
上述氮化工艺中,将Si-TiO2坯体放入石墨坩埚,以10℃/min的升温速率将温度升至1390℃,并保温4h,气氛为1atm的氮气,合成Si3N4-Si2N2O-TiN三元复合粉体。
本发明制备得到的Si3N4-Si2N2O-TiN三元复合粉体中,Si3N4、Si2N2O、TiN的粒径分别为<5μnm、<5μnm、<1μnm,Si3N4:Si2N2O:TiN质量分数比为57~98%:1.5~33%:0.5~10%,并且Si2N2O和TiN均匀分布于Si3N4中。
本发明以Si粉和钛酸丁酯为原料,合成了Si3N4-Si2N2O-TiN三元复合粉体。本发明仅通过一种引入钛酸丁酯液体,就可以同时原位引入Si2N2O和TiN两相,降低成本,避免过度杂质的引入。同时,以液态形式引入原料,可以实现Si2N2O和TiN相更均匀细小分布于Si3N4粉体。与现有技术相比,本发明具有如下有益效果:
(1)本发明以Si粉作为原料,经钛酸丁酯引入的TiO2可以促进Si粉氮化,降低成本;
(2)本发明仅加入一种钛酸丁酯原料,实现了Si2N2O和TiN 两种产物的引入;
(3)本发明通过液态形式引入钛酸丁酯并结合高温原位反应,可以实现Si2N2O和TiN更均匀分布于Si3N4中,显著降低Si2N2O和TiN的粒径。
(4)本发明以钛酸丁酯引入TiO2,展现了三重协同作用:加快Si粉的氮化、促进形成高性能Si2N2O相、形成均匀分布且粒径细小的TiN相,最终显著改善Si3N4陶瓷性能。
附图说明
图1为本发明实施例1制备的Si3N4-Si2N2O-TiN三元复合粉体的XRD图。
图2为本发明实施例1制备的Si3N4-Si2N2O-TiN三元复合粉体的SEM图。
图3为本发明实施例2制备的Si3N4-Si2N2O-TiN三元复合粉体的XRD图。
图4为本发明实施例2制备的Si3N4-Si2N2O-TiN三元复合粉体的SEM图。
图5为本发明实施例3制备的Si3N4-Si2N2O-TiN三元复合粉体的XRD图。
图6为本发明实施例3制备的Si3N4-Si2N2O-TiN三元复合粉体的SEM图。
具体实施方式
下面结合说明书附图和具体实施例对本发明做进一步详细、完整地说明,但决非限制本发明,本发明也并非仅局限于下述实施例的内容,下述所使用的实验方法若无特殊说明,均为本技术领域现有常规的方法,所使用的配料或材料,如无特殊说明,均为通过商业途径可得到的配料或材料。下面给出实施案例:
实施例1
本发明的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,包括如下步骤:
(1)以Si粉、钛酸丁酯为原料,按照Si粉质量分数为73%、钛酸丁酯质量分数为27%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在行星球磨机上混合12h,经混料、干燥后,得到混合均匀的Si-TiO2复合粉体,其中Si粉的质量分数为92%、TiO2的质量分数为8%。
(2)将Si-TiO2复合粉体干压成型得到Si-TiO2坯体,将 Si-TiO2坯体放入石墨坩埚,以10℃/min的升温速率将温度升至1400℃,并保温2h,整个过程气氛为1atm的氮气,原位合成Si3N4-Si2N2O-TiN三元复合粉体。
本实施例制备得到的Si3N4-Si2N2O-TiN三元复合粉体,Si3N4、Si2N2O、TiN粒径分别为3.5μnm、3.5μnm、0.6μnm,Si3N4:Si2N2O:TiN质量分数比为84%:12%:3%,并且Si2N2O和TiN均匀分布于Si3N4中。
实施例2
本实施例的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,具体如下:
按照Si粉质量分数为82%、钛酸丁酯质量分数为18%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在行星球磨机上混合12h,经混料、干燥,获得Si-TiO2复合粉体,其中Si和TiO2的质量分数比为95%:5%,按照实施例1方法原位合成Si3N4-Si2N2O-TiN三元复合粉体,其中将温度升至1400℃保温2h。制备所得的Si3N4-Si2N2O-TiN三元复合粉体,Si3N4、Si2N2O、TiN粒径分别为3.7μnm、3.8μnm、0.7μnm,Si3N4:Si2N2O:TiN质量分数比为89.9%:7.7%:2.4%,并且Si2N2O和TiN均匀分布于Si3N4中。
实施例3
本实施例的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,具体如下:
按照Si粉质量分数为92%、钛酸丁酯质量分数为8%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在行星球磨机上混合12h,经混料、干燥,获得Si-TiO2复合粉体,其中Si和TiO2的质量分数比为98%:2%,按照实施例1方法原位合成Si3N4-Si2N2O-TiN三元复合粉体,其中将温度升至1400℃保温2h。制备所得的Si3N4-Si2N2O-TiN三元复合粉体,Si3N4、Si2N2O、TiN粒径分别为3.1μnm、3μnm、0.5μnm,Si3N4:Si2N2O:TiN质量分数比为96%:3%:1%,并且Si2N2O和TiN均匀分布于Si3N4中。
实施例4
本实施例的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,具体如下:
按照Si粉质量分数为68%、钛酸丁酯质量分数为32%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在行星球磨机上混合12h,经混料、干燥,获得Si-TiO2复合粉体,其中Si和TiO2的质量分数比为90%:10%,按照实施例1方法原位合成Si3N4-Si2N2O-TiN三元复合粉体,其中将温度升至1395℃保温4h。制备所得的Si3N4-Si2N2O-TiN三元复合粉体,Si3N4、Si2N2O、TiN粒径分别为3.6μnm、3.6μnm、0.7μnm,Si3N4:Si2N2O:TiN质量分数比为79.5%:15.6%:4.9%,并且Si2N2O和TiN均匀分布于Si3N4中。
实施例5
本实施例的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,具体如下:
按照Si粉质量分数为63%、钛酸丁酯质量分数为37%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在行星球磨机上混合12h,经混料、干燥,获得Si-TiO2复合粉体,其中Si和TiO2的质量分数比为88%:12%,按照实施例1方法原位合成Si3N4-Si2N2O-TiN三元复合粉体,其中将温度升至1370℃保温4.5h。制备所得的Si3N4-Si2N2O-TiN三元复合粉体,Si3N4、Si2N2O、TiN粒径分别为3.4μnm、3.2μnm、0.6μnm,Si3N4:Si2N2O:TiN质量分数比为75%:19%:6%,并且Si2N2O和TiN均匀分布于Si3N4中。
实施例6
本实施例的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,具体如下:
按照Si粉质量分数为59%、钛酸丁酯质量分数为41%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在行星球磨机上混合12h,经混料、干燥,获得Si-TiO2复合粉体,其中Si和TiO2的质量分数比为86%:14%,按照实施例1方法原位合成Si3N4-Si2N2O-TiN三元复合粉体,其中将温度升至1365℃保温5h。制备所得的Si3N4-Si2N2O-TiN三元复合粉体,Si3N4、Si2N2O、TiN粒径分别为3.1μnm、2.8μnm、0.5μnm,Si3N4:Si2N2O:TiN质量分数比为70.8%:22.3%:6.9%,并且Si2N2O和TiN均匀分布于Si3N4中。
Claims (5)
1.一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,其特征在于,包括如下步骤:
(1)以Si粉、钛酸丁酯为原料,按Si:钛酸丁酯的质量分数比为48~96%:4~52%的配比经混料、干燥,获得Si-TiO2复合粉体;
(2)将Si-TiO2复合粉体干压成型,放入气氛炉中进行氮化,通过原位反应合成Si3N4-Si2N2O-TiN三元复合粉体;
上述步骤(1)获得的Si-TiO2复合粉体中,Si和TiO2的质量分数比为80~99%:1~20%;
上述步骤(1)的Si粉纯度为95~100%,粒径为<10μm,钛酸丁酯纯度为98~100%;
上述步骤(1)中,以无水乙醇为溶剂,以Si3N4球为球磨介质,在球磨机上球磨4~48h,干燥后过筛得到Si-TiO2复合粉体;
上述步骤(2)的氮化工艺为:将Si-TiO2坯体放入石墨坩埚,以5-20℃/min的升温速率将温度升至1300~1450℃,并保温0.5~20h,气氛为1atm的氮气,获得Si3N4-Si2N2O-TiN三元复合粉体。
2.根据权利要求1所述的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,其特征在于上述步骤(1)中,在行星球磨机上球磨12h。
3.根据权利要求1所述的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,其特征在于上述步骤(1)中,Si和TiO2的质量分数比为92%:8%。
4.根据权利要求1所述的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,其特征在于上述氮化工艺中,将Si-TiO2坯体放入石墨坩埚,以10℃/min的升温速率将温度升至1390℃,并保温4h,气氛为1atm的氮气,合成Si3N4-Si2N2O-TiN三元复合粉体。
5.根据权利要求1至4任一项所述的原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法,其特征在于制备得到的Si3N4-Si2N2O-TiN三元复合粉体中,Si3N4、Si2N2O、TiN的粒径分别为<5μm、<5μm、<1μm,Si3N4:Si2N2O:TiN质量分数比为57~98%:1.5~33%:0.5~10%,并且Si2N2O和TiN均匀分布于Si3N4中。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510992173.0A CN105622108B (zh) | 2015-12-23 | 2015-12-23 | 一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510992173.0A CN105622108B (zh) | 2015-12-23 | 2015-12-23 | 一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105622108A CN105622108A (zh) | 2016-06-01 |
CN105622108B true CN105622108B (zh) | 2018-11-09 |
Family
ID=56037505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510992173.0A Active CN105622108B (zh) | 2015-12-23 | 2015-12-23 | 一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105622108B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109750351A (zh) * | 2018-05-31 | 2019-05-14 | 河北高富氮化硅材料有限公司 | 一种多晶硅铸锭用高效Si3N4粉 |
CN116693303A (zh) * | 2023-03-31 | 2023-09-05 | 江苏东浦精细陶瓷科技股份有限公司 | 一种TiN-Si3N4复合材料的近净成形方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104926317A (zh) * | 2015-06-01 | 2015-09-23 | 广东工业大学 | 一种高韧性Si3N4陶瓷的制备方法 |
-
2015
- 2015-12-23 CN CN201510992173.0A patent/CN105622108B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104926317A (zh) * | 2015-06-01 | 2015-09-23 | 广东工业大学 | 一种高韧性Si3N4陶瓷的制备方法 |
Non-Patent Citations (2)
Title |
---|
Preparation and properties of TiN–Si3N4 composites;Lian Gao et al.;《Journal of the European Ceramic Society》;20041231;第24卷;第381~386页 * |
Thermal stability of in situ formed Si3N4–Si2N2O–TiN composites;Ren-Guan Duan et al.;《Journal of the European Ceramic Society》;20021231;第22卷;第2527~2535页 * |
Also Published As
Publication number | Publication date |
---|---|
CN105622108A (zh) | 2016-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2014403693B2 (en) | Preparation method for high-density hexagonal boron nitride ceramic material | |
Ni et al. | Synthesis of monodispersed fine hafnium diboride powders using carbo/borothermal reduction of hafnium dioxide | |
TWI724259B (zh) | 六方晶氮化硼粉末及其製造方法 | |
CN110156468A (zh) | 一种ZrC-ZrB2-SiC陶瓷复合粉体的前驱体转化法制备工艺 | |
CN102730690A (zh) | 一种Al4SiC4材料的合成方法 | |
CN105692641A (zh) | 一种硼化钨的制备方法及应用 | |
CN104291829B (zh) | 一种高α相氮化硅的制备方法 | |
Bagchi et al. | Nanocrystalline mullite synthesis at a low temperature: effect of copper ions | |
CN105622108B (zh) | 一种原位合成Si3N4-Si2N2O-TiN三元复合粉体的方法 | |
CN108383530A (zh) | 一种ZrB2-SiC陶瓷复合粉体的前驱体转化法制备工艺 | |
CN102515725B (zh) | 含碳化硼和氮化硅的熔融石英陶瓷材料的制备方法 | |
KR101323322B1 (ko) | 복합재료 강화재용 탄소나노튜브의 제조방법 | |
TW200930687A (en) | High resistivity silicon carbide | |
Jamshidi et al. | Application of the statistical Taguchi method to optimize X-SiAlON and mullite formation in composite powders prepared by the SRN process | |
CN105777162A (zh) | 一种掺杂Y2O3的BaZrO3耐火材料 | |
He et al. | Study of rare-earth oxide sintering additive systems for Spark Plasma Sintering AlN ceramics | |
CN105948761B (zh) | 一种等轴状β-Si3N4+TiN+O′-Sialon复相陶瓷材料及其制备方法 | |
TW201233780A (en) | Method for preparing β SiAlON compound | |
CN103466646A (zh) | 一种陶瓷硅酸镱粉体的固相反应制备方法 | |
KR101355542B1 (ko) | 세라믹 복합재료 및 그의 제조방법 | |
Lee et al. | Hexagonal plate‐like ternary carbide particulates synthesized by a carbothermal reduction process: processing parameters and synthesis mechanism | |
CN105837224A (zh) | 一种以氟化铵为添加剂的氮化铝陶瓷的制备方法 | |
CN102731109B (zh) | 一种AlON材料的合成方法 | |
CN103936421B (zh) | 一种TiC0.6/TiC0.6-Al2O3复合陶瓷的制备方法 | |
Maqsood | Phase transformations in Ho2Si2O7 ceramics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210916 Address after: 130000 building F2, phase 2-1, Beihu science and Technology Industrial Park, Beihu science and Technology Development Zone, Changchun City, Jilin Province Patentee after: JILIN CHANGYU TETAO NEW MATERIAL TECHNOLOGY Co.,Ltd. Address before: 510006 No. 100 West Ring Road, Guangzhou University, Guangzhou, Guangdong, Panyu District Patentee before: GUANGDONG University OF TECHNOLOGY |