CN105827201A - Crystalline silicon solar main-grid-free battery sheet IV test apparatus - Google Patents
Crystalline silicon solar main-grid-free battery sheet IV test apparatus Download PDFInfo
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- CN105827201A CN105827201A CN201610216990.1A CN201610216990A CN105827201A CN 105827201 A CN105827201 A CN 105827201A CN 201610216990 A CN201610216990 A CN 201610216990A CN 105827201 A CN105827201 A CN 105827201A
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- grid cell
- cell sheet
- dereliction grid
- test
- battery sheet
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- 238000012360 testing method Methods 0.000 title claims abstract description 119
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- 239000000523 sample Substances 0.000 claims abstract description 31
- 238000005259 measurement Methods 0.000 claims abstract description 21
- 238000010998 test method Methods 0.000 claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 12
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000010521 absorption reaction Methods 0.000 claims description 28
- 230000032258 transport Effects 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 169
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a crystalline silicon solar main-grid-free battery sheet IV test method and apparatus. The test method comprises the following steps: transporting a main-grid-free battery sheet to somewhere above a battery sheet load-bearing platform, and a correction mechanism correcting the position of the main-grid-free battery sheet; raising the battery sheet load-bearing platform, and after the battery sheet is adsorbed in a vacuum mode, removing the correction mechanism; raising a lower probe row of the battery sheet load-bearing system to enable the lower probe row to be stabbed into the back surface of the main-grid-free battery sheet; pressing down a front-surface test platform to press a silk screen structure at the front-surface test platform into a front-surface grid wire of the main-grid-free battery sheet; and starting a xenon lamp of a test mechanism, enabling the main-grid-free battery sheet to be photoinduced to generate power, and at the same time, measuring electric performance of the main-grid-free battery sheet. According to the crystalline silicon solar main-grid-free battery sheet IV test method and apparatus, a press into an electrode is realized by use of the silk screen structure so that the measurement accuracy is ensured. The load-bearing platform absorbs the back surface of the battery sheet, the battery sheet maintains a pressure balance during upper and lower measurement, and thus the battery sheet is prevented from ruptures.
Description
Technical field
The present invention relates to crystal silicon solar batteries built-in testing technical field, particularly relate to a kind of crystal silicon solar dereliction grid cell sheet IV and test device.
Background technology
The most conventional crystal silicon solar batteries sheet, has the main gate line of 3-5 root silver slurry in front, and solar cell surface can be blocked, thus affect the cell piece absorption to light, and then be affected its generating efficiency by main gate line.
Follow-up novel crystal silicon solar batteries sheet, front main grid line is cancelled, but the electrical property for test cell piece brings again new difficulty.The most conventional solar battery sheet measurement is the electrical property using the mechanism of two rows probe row to measure cell piece.Efficient solar battery sheet (solar battery sheet of IBC, MWT technology) is then that positive and negative electrode all introduces the back side, thus collects electrical property signal overleaf and test.
The shortcoming of the probe row of existing dereliction grid solar cell sheet measurement equipment is: the pressure of probe row is uneven up and down, causes crystal silicon solar batteries sheet to rupture；Using tack probe, if solaode plate electrode aoxidizes, then probe cannot thrust electrode, causes measuring inaccurate.
Summary of the invention
It is an object of the invention to provide a kind of crystal silicon solar dereliction grid cell sheet IV and test device, it is ensured that while measurement accuracy, it is to avoid rupturing of cell piece.
For solving above-mentioned technical problem, embodiments provide a kind of crystal silicon solar dereliction grid cell sheet IV method of testing, including:
Dereliction grid cell sheet transports the top of cell piece carrying platform, and the position of dereliction grid cell sheet is corrected by aligning gear；
Rise described cell piece carrying platform, after vac sorb cell piece, withdraw described aligning gear；
Rise the test faller gill of described cell piece carrying platform so that described test faller gill thrusts the back side of described dereliction grid cell sheet；
Lower positive pressure face test platform so that the screen net structure of described front test platform is pressed into the front gate line of described dereliction grid cell sheet；
Start the xenon lamp of mechanism for testing so that described dereliction grid cell sheet electroluminescent, measure the electrical property of described dereliction grid cell sheet simultaneously.
Wherein, the degree of depth at the back side that described test faller gill thrusts described dereliction grid cell sheet is 0.1mm.
Wherein, at the xenon lamp of described startup mechanism for testing, carry out the electroluminescent started, after measuring the electrical property of described dereliction grid cell sheet, also include simultaneously:
After described cell piece carrying platform release vacuum 0.5s, decline described cell piece carrying platform so that described dereliction grid cell sheet is placed on feed belt, and by described feed belt, described dereliction grid cell sheet is passed to next station.
In addition, the embodiment of the present invention additionally provides a kind of crystal silicon solar dereliction grid cell sheet IV and tests device, including:
Aligning gear, described aligning gear is for being corrected the position of dereliction grid cell sheet；
Test platform, described test platform includes front test platform and cell piece carrying platform, described cell piece carrying platform is used for placing described dereliction grid cell sheet, the front of described cell piece carrying platform is provided with multiple vacuum absorption holes, for adsorbing described dereliction grid cell sheet, described cell piece carrying platform is provided with direction test faller gill upwards, and described test faller gill thrusts the back side of described dereliction grid cell sheet；Front test platform, the bottom of described front test platform is provided with screen net structure, after the front gate line being pressed into described dereliction grid cell sheet at described screen net structure, with the measurement that described cell piece carrying platform completes electrical property to described dereliction grid cell sheet jointly.
Wherein, the degree of depth at the back side that described test faller gill thrusts described dereliction grid cell sheet is 0.1mm.
Wherein, described net frame structure being provided with the tinsel that the front gate line of a plurality of and described dereliction grid cell sheet is corresponding, described tinsel narrows along with the reduction width of height
Wherein, multiple described vacuum absorption holes composition vacuum absorption holes row, described vacuum absorption holes row be arranged in parallel with described test faller gill.
Wherein, described cell piece carrying platform also includes appearing hole for the probe lifted for described test faller gill.
Wherein, described vacuum absorption holes row and adjacent described vacuum absorption holes row or described test faller gill spaced set, and/or described in adjacent two rows, between test faller gill, it is provided with vacuum absorption holes row described in two rows.
Wherein, the front of described cell piece carrying platform is provided with at least one escape groove parallel with described test faller gill, and described escape groove is for placing the conveyer belt for the described dereliction grid cell sheet completing test is sent to next station.
Crystal silicon solar dereliction grid cell sheet IV method of testing that the embodiment of the present invention is provided and device, compared with prior art, have the advantage that
The crystal silicon solar dereliction grid cell sheet IV method of testing that the embodiment of the present invention provides, including:
Dereliction grid cell sheet transports the top of cell piece carrying platform, and the position of dereliction grid cell sheet is corrected by aligning gear；
Rise described cell piece carrying platform, after vac sorb cell piece, withdraw described aligning gear；
Rise the test faller gill of described cell piece carrying platform so that described test faller gill thrusts the back side of described dereliction grid cell sheet；
Lower positive pressure face test platform so that the screen net structure of described front test platform is pressed into the front gate line of described dereliction grid cell sheet；
Start the xenon lamp of mechanism for testing so that described dereliction grid cell sheet electroluminescent, measure the electrical property of described dereliction grid cell sheet simultaneously.
The crystal silicon solar dereliction grid cell sheet IV that the embodiment of the present invention that the embodiment of the present invention provides additionally provides tests device, including:
Aligning gear, described aligning gear is for being corrected the position of dereliction grid cell sheet；
Test platform, described test platform includes front test platform and cell piece carrying platform, described cell piece carrying platform is used for placing described dereliction grid cell sheet, the front of described cell piece carrying platform is provided with multiple vacuum absorption holes, for adsorbing described dereliction grid cell sheet, described cell piece carrying platform is provided with direction test faller gill upwards, and described test faller gill thrusts the back side of described dereliction grid cell sheet；Front test platform, the bottom of described front test platform is provided with screen net structure, after the front gate line being pressed into described dereliction grid cell sheet at described screen net structure, with the measurement that described cell piece carrying platform completes electrical property to described dereliction grid cell sheet jointly.
Described crystal silicon solar dereliction grid cell sheet IV method of testing and device, by using screen net structure press-in electrode, it is ensured that the accuracy of measurement, plummer is used to adsorb the cell piece back side, when making to measure up and down, cell piece keeps pressure balance, thus avoids rupturing of cell piece.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in describing below is some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
A kind of steps flow chart schematic diagram of the detailed description of the invention of the crystal silicon solar dereliction grid cell sheet IV method of testing that Fig. 1 is provided by the embodiment of the present invention；
The front view schematic diagram of a kind of detailed description of the invention of test platform of the crystal silicon solar dereliction grid cell sheet IV test device that Fig. 2 is provided by the embodiment of the present invention；
The top view structural representation of the cell piece carrying platform of the crystal silicon solar dereliction grid cell sheet IV test device that Fig. 3 is provided by the embodiment of the present invention；
A kind of structural representation of the screen net structure of the crystal silicon solar dereliction grid cell sheet IV test device that Fig. 4 is provided by the embodiment of the present invention.
Detailed description of the invention
The most as described in the background section, the shortcoming of the probe row of existing dereliction grid solar cell sheet measurement equipment is: the pressure of probe row is uneven up and down, causes crystal silicon solar batteries sheet to rupture；Using tack probe, if solaode plate electrode aoxidizes, then probe cannot thrust electrode, causes measuring inaccurate.
Based on this, embodiments provide a kind of crystal silicon solar dereliction grid cell sheet IV method of testing, including:
Dereliction grid cell sheet transports the top of cell piece carrying platform, and the position of dereliction grid cell sheet is corrected by aligning gear；
Rise described cell piece carrying platform, after vac sorb cell piece, withdraw described aligning gear；
Rise the test faller gill of described cell piece carrying platform so that described test faller gill thrusts the back side of described dereliction grid cell sheet；
Lower positive pressure face test platform so that the screen net structure of described front test platform is pressed into the front gate line of described dereliction grid cell sheet；
Start the xenon lamp of mechanism for testing so that described dereliction grid cell sheet electroluminescent, measure the electrical property of described dereliction grid cell sheet simultaneously.
In addition, what the embodiment of the present invention provided additionally provides a kind of crystal silicon solar dereliction grid cell sheet IV test device, including:
Aligning gear, described aligning gear is for being corrected the position of dereliction grid cell sheet；
Test platform, described test platform includes front test platform and cell piece carrying platform, described cell piece carrying platform is used for placing described dereliction grid cell sheet, the front of described cell piece carrying platform is provided with multiple vacuum absorption holes, for adsorbing described dereliction grid cell sheet, described cell piece carrying platform is provided with direction test faller gill upwards, and described test faller gill thrusts the back side of described dereliction grid cell sheet；Front test platform, the bottom of described front test platform is provided with screen net structure, after the front gate line being pressed into described dereliction grid cell sheet at described screen net structure, with the measurement that described cell piece carrying platform completes electrical property to described dereliction grid cell sheet jointly.
In sum, the crystal silicon solar dereliction grid cell sheet IV method of testing of embodiment of the present invention offer and device, by using screen net structure press-in electrode, ensure that the accuracy of measurement, plummer is used to adsorb the cell piece back side, when making to measure up and down, cell piece keeps pressure balance, thus avoids rupturing of cell piece.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in detail.
Elaborate detail in the following description so that fully understanding the present invention.But the present invention can be different from alternate manner described here implement with multiple, those skilled in the art can do similar popularization in the case of intension of the present invention.Therefore the present invention is not limited by following public being embodied as.
Refer to the steps flow chart schematic diagram of a kind of detailed description of the invention of the crystal silicon solar dereliction grid cell sheet IV method of testing that Fig. 1, Fig. 1 are provided by the embodiment of the present invention.
In the concrete mode of one, described crystal silicon solar dereliction grid cell sheet IV method of testing, including:
Step 10, transports the top of cell piece carrying platform by dereliction grid cell sheet, and the position of dereliction grid cell sheet is corrected by aligning gear；
Step 20, rises described cell piece carrying platform, after vac sorb cell piece, withdraws described aligning gear；
Step 30, rises the test faller gill of described cell piece carrying platform so that described test faller gill thrusts the back side of described dereliction grid cell sheet；
Step 40, lower positive pressure face test platform so that the screen net structure of described front test platform is pressed into the front gate line of described dereliction grid cell sheet；
Step 50, starts the xenon lamp of mechanism for testing so that described dereliction grid cell sheet electroluminescent, measures the electrical property of described dereliction grid cell sheet simultaneously.
Described crystal silicon solar dereliction grid cell sheet IV method of testing, by using screen net structure press-in electrode, it is ensured that the accuracy of measurement, plummer is used to adsorb the cell piece back side, when making to measure up and down, cell piece keeps pressure balance, thus avoids rupturing of cell piece.
It is to form loop that test faller gill thrusts the back side of dereliction grid cell sheet, and when making to test, dereliction grid cell sheet keeps stable, it is ensured that the accuracy of measurement, the degree of depth at the back side that general described test faller gill thrusts described dereliction grid cell sheet is 0.1mm.
It is to the aspect detected at dereliction grid cell sheet owing to measuring electrical parameter, in reality is measured, also can measure other parameter of dereliction grid cell sheet detection, the xenon lamp of the most described startup mechanism for testing, carry out the electroluminescent started, after measuring the electrical property of described dereliction grid cell sheet, also include simultaneously:
Step 60, after described cell piece carrying platform release vacuum 0.5s, declines described cell piece carrying platform so that described dereliction grid cell sheet is placed on feed belt, and by described feed belt, described dereliction grid cell sheet is passed to next station.
In addition, the embodiment of the present invention additionally provides a kind of crystal silicon solar dereliction grid cell sheet IV and tests device, as in Figure 2-4, and including:
Aligning gear, described aligning gear is for being corrected the position of dereliction grid cell sheet；
Test platform 10, described test platform includes front test platform 11 and cell piece carrying platform 12, described cell piece carrying platform 12 is used for placing described dereliction grid cell sheet, the front of described cell piece carrying platform 22 is provided with multiple vacuum absorption holes 1211, for adsorbing described dereliction grid cell sheet, described cell piece carrying platform 12 is provided with direction test faller gill upwards, and described test faller gill thrusts the back side of described dereliction grid cell sheet；Front test platform 11, the bottom of described front test platform 11 is provided with screen net structure 111, after the front gate line being pressed into described dereliction grid cell sheet at described screen net structure 111, with the measurement that described cell piece carrying platform 12 completes electrical property to described dereliction grid cell sheet jointly.
Described crystal silicon solar dereliction grid cell sheet IV device, by using screen net structure 111 to be pressed into electrode, it is ensured that the accuracy of measurement, plummer is used to adsorb the cell piece back side, when making to measure up and down, cell piece keeps pressure balance, thus avoids rupturing of cell piece.
It is to form loop that test faller gill thrusts the back side of dereliction grid cell sheet, and when making to test, dereliction grid cell sheet keeps stable, it is ensured that the accuracy of measurement, the degree of depth at the back side that general described test faller gill thrusts described dereliction grid cell sheet is 0.1mm.
Screen net structure 111 is used to be pressed into the front gate line of cell piece, form loop with test faller gill and cell piece is carried out electricity performance measurement, general screen net structure 111 can be arranged on a framework, by changing the width of the tinsel 1112 of the silk screen on screen frame 1111, length, spacing and quantity, different types of dereliction grid cell sheet is carried out electricity performance measurement, annexation for tinsel 1112 with screen frame 1111, the tinsel 1112 that the front gate line of a plurality of and described dereliction grid cell sheet is corresponding it is provided with on general screen frame 1111, described tinsel 1112 narrows along with the reduction width of height, ensure that screen frame 1111 can be with all of front gate line good contact.It should be noted that the material etc. of described screen net structure 111 and described net frame structure is not specifically limited by the present invention.
Owing to the front of cell piece carrying platform 12 is provided with, vac sorb is empty and probe is arranged, for ensureing structural strength, vacuum absorption holes 1211 and the general all concentrated settings of probe row, forming vacuum absorption holes 1211 row at multiple described vacuum absorption holes 1211, described vacuum absorption holes 1211 row be arranged in parallel with described test faller gill.It should be noted that, vacuum absorption holes 2211 can also be adopted with probe row and arrange in other ways, such as the mode using concentric circular to arrange, both the good adsorption to cell piece had been ensured, ensure again the probe good contact to cell piece, but vacuum absorption holes 1211 uses multiple rows of set-up mode, easily improving the efficiency of evacuation, the lifting of probe is less on the impact of evacuation.
The probe of probe row is when not in use, easily staff is scratched, probe causes damage simultaneously, bothers very much, is therefore typically covered up by probe when probe does not uses, general described cell piece carrying platform 12 also includes appearing hole 1212 for the probe lifted for described test faller gill, when measuring, probe appears sky by probe and penetrates the cell piece back side, after measuring, probe returns to probe and appears in hole 1212, it is ensured that probe when not in use will not be the most damaged.
Preferably, described vacuum absorption holes 1211 row and adjacent described vacuum absorption holes 1211 row or described test faller gill spaced set, and/or described in adjacent two rows, between test faller gill, it is provided with vacuum absorption holes 1211 row described in two rows.
After by the electricity performance measurement of cell piece, need to remove cell piece, efficiency is measured to improve, the front of described cell piece carrying platform 12 is provided with at least one escape groove 123 parallel with described test faller gill, and described escape groove 123 is for placing the conveyer belt 122 for the described dereliction grid cell sheet completing test is sent to next station.The front of general cell piece carrying platform 12 is provided with two parallel escape groove 123.
Cell piece carrying platform 12 generally comprises structure and plummer back shroud on plummer, plummer typically can arrange between structure and plummer back shroud plummer sealing ring, it is used for ensureing the evacuation efficiency to vacuum absorption holes 1211, it is ensured that air tight or few gas leakage.Arrange with the structure cell body for test needle lifting on plummer back shroud, it should be noted that the present invention shape and structure to described structure cell body and the concrete up-down mode to test needle lifting are not specifically limited.
Up-down mode to lower probe, can be to use manual up-down mode, it would however also be possible to employ electronic up-down mode, as long as ensureing the accuracy of the displacement of the lifting of lower probe.
In sum, the crystal silicon solar dereliction grid cell sheet IV method of testing of embodiment of the present invention offer and device, by using screen net structure press-in electrode, ensure that the accuracy of measurement, plummer is used to adsorb the cell piece back side, when making to measure up and down, cell piece keeps pressure balance, thus avoids rupturing of cell piece.
Above crystal silicon solar dereliction grid cell sheet IV method of testing provided by the present invention and device are described in detail.Principle and the embodiment of the present invention are set forth by specific case used herein, and the explanation of above example is only intended to help to understand method and the core concept thereof of the present invention.It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to the present invention is carried out some improvement and modification, these improve and modify in the protection domain also falling into the claims in the present invention.
Claims (10)
1. a crystal silicon solar dereliction grid cell sheet IV method of testing, it is characterised in that including:
Dereliction grid cell sheet transports the top of cell piece carrying platform, and the position of dereliction grid cell sheet is corrected by aligning gear；
Rise described cell piece carrying platform, after vac sorb cell piece, withdraw described aligning gear；
Rise the test faller gill of described cell piece carrying platform so that described test faller gill thrusts the back side of described dereliction grid cell sheet；
Lower positive pressure face test platform so that the screen net structure of described front test platform is pressed into the front gate line of described dereliction grid cell sheet；
Start the xenon lamp of mechanism for testing so that described dereliction grid cell sheet electroluminescent, measure the electrical property of described dereliction grid cell sheet simultaneously.
2. crystal silicon solar dereliction grid cell sheet IV method of testing as claimed in claim 1, it is characterised in that the degree of depth at the back side that described test faller gill thrusts described dereliction grid cell sheet is 0.1mm.
3. crystal silicon solar dereliction grid cell sheet IV method of testing as claimed in claim 2, it is characterised in that at the xenon lamp of described startup mechanism for testing, carry out the electroluminescent started, after measuring the electrical property of described dereliction grid cell sheet, also include simultaneously:
After described cell piece carrying platform release vacuum 0.5s, decline described cell piece carrying platform so that described dereliction grid cell sheet is placed on feed belt, and by described feed belt, described dereliction grid cell sheet is passed to next station.
4. a crystal silicon solar dereliction grid cell sheet IV tests device, it is characterised in that including:
Aligning gear, described aligning gear is for being corrected the position of dereliction grid cell sheet；
Test platform, described test platform includes front test platform and cell piece carrying platform, described cell piece carrying platform is used for placing described dereliction grid cell sheet, the front of described cell piece carrying platform is provided with multiple vacuum absorption holes, for adsorbing described dereliction grid cell sheet, described cell piece carrying platform is provided with direction test faller gill upwards, and described test faller gill thrusts the back side of described dereliction grid cell sheet；Front test platform, the bottom of described front test platform is provided with screen net structure, after the front gate line being pressed into described dereliction grid cell sheet at described screen net structure, with the measurement that described cell piece carrying platform completes electrical property to described dereliction grid cell sheet jointly.
5. crystal silicon solar dereliction grid cell sheet IV as claimed in claim 4 tests device, it is characterised in that the degree of depth at the back side that described test faller gill thrusts described dereliction grid cell sheet is 0.1mm.
6. crystal silicon solar dereliction grid cell sheet IV as claimed in claim 5 tests device, it is characterized in that, being provided with the tinsel that the front gate line of a plurality of and described dereliction grid cell sheet is corresponding on described net frame structure, described tinsel narrows along with the reduction width of height
7. crystal silicon solar dereliction grid cell sheet IV as claimed in claim 6 tests device, it is characterised in that multiple described vacuum absorption holes composition vacuum absorption holes row, described vacuum absorption holes row be arranged in parallel with described test faller gill.
8. crystal silicon solar dereliction grid cell sheet IV as claimed in claim 6 tests device, it is characterised in that described cell piece carrying platform also includes appearing hole for the probe lifted for described test faller gill.
9. crystal silicon solar dereliction grid cell sheet IV as claimed in claim 8 tests device, it is characterized in that, described vacuum absorption holes row and adjacent described vacuum absorption holes row or described test faller gill spaced set, and/or described in adjacent two rows, between test faller gill, it is provided with vacuum absorption holes row described in two rows.
10. crystal silicon solar dereliction grid cell sheet IV as claimed in claim 9 tests device, it is characterized in that, the front of described cell piece carrying platform is provided with at least one escape groove parallel with described test faller gill, and described escape groove is for placing the conveyer belt for the described dereliction grid cell sheet completing test is sent to next station.
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| CN201610216990.1A CN105827201B (en) | 2016-04-08 | 2016-04-08 | A kind of crystal silicon solar dereliction grid cell piece IV test devices |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107911080A (en) * | 2017-12-19 | 2018-04-13 | 泰州隆基乐叶光伏科技有限公司 | The test device of solar cell electrical property |
| CN108133898A (en) * | 2017-12-19 | 2018-06-08 | 泰州隆基乐叶光伏科技有限公司 | A kind of solar cell electric performance testing device |
| CN110246924A (en) * | 2019-05-10 | 2019-09-17 | 江苏润阳悦达光伏科技有限公司 | Crystal silicon solar batteries piece corrects conducting bar |
| WO2019178931A1 (en) * | 2018-03-23 | 2019-09-26 | 成都晔凡科技有限公司 | Method and system for testing battery pieces of shingled assembly |
| JPWO2019202978A1 (en) * | 2018-04-18 | 2021-05-13 | 住友電気工業株式会社 | Pressure inspection method for housing unit for photovoltaic power generation equipment |
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| CN107911080A (en) * | 2017-12-19 | 2018-04-13 | 泰州隆基乐叶光伏科技有限公司 | The test device of solar cell electrical property |
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| WO2019178931A1 (en) * | 2018-03-23 | 2019-09-26 | 成都晔凡科技有限公司 | Method and system for testing battery pieces of shingled assembly |
| JPWO2019202978A1 (en) * | 2018-04-18 | 2021-05-13 | 住友電気工業株式会社 | Pressure inspection method for housing unit for photovoltaic power generation equipment |
| EP3783797A4 (en) * | 2018-04-18 | 2022-02-09 | Sumitomo Electric Industries, Ltd. | Pressure test method for solar power generation device housing unit |
| JP7331841B2 (en) | 2018-04-18 | 2023-08-23 | 住友電気工業株式会社 | Pressure inspection method for housing unit for photovoltaic power generation device |
| CN110246924A (en) * | 2019-05-10 | 2019-09-17 | 江苏润阳悦达光伏科技有限公司 | Crystal silicon solar batteries piece corrects conducting bar |
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