CN105827201B - A kind of crystal silicon solar dereliction grid cell piece IV test devices - Google Patents
A kind of crystal silicon solar dereliction grid cell piece IV test devices Download PDFInfo
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- CN105827201B CN105827201B CN201610216990.1A CN201610216990A CN105827201B CN 105827201 B CN105827201 B CN 105827201B CN 201610216990 A CN201610216990 A CN 201610216990A CN 105827201 B CN105827201 B CN 105827201B
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- 238000012360 testing method Methods 0.000 title claims abstract description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000013078 crystal Substances 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 238000005259 measurement Methods 0.000 claims abstract description 33
- 238000010998 test method Methods 0.000 claims abstract description 17
- 230000007246 mechanism Effects 0.000 claims abstract description 10
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000523 sample Substances 0.000 claims description 35
- 238000010521 absorption reaction Methods 0.000 claims description 25
- 230000009467 reduction Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 167
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 210000005056 cell body Anatomy 0.000 description 2
- 238000012812 general test Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a kind of crystal silicon solar dereliction grid cell piece IV method of testings and device, wherein, method of testing includes：Dereliction grid cell piece is transported to the top of cell piece carrying platform, aligning gear is corrected to the position of dereliction grid cell piece；Rise cell piece carrying platform, after vacuum suction cell piece, withdraw aligning gear；Rise the test faller gill of cell piece carrying platform so that test faller gill is pierced into the back side of dereliction grid cell piece；Push front test platform so that the front gate line of the screen net structure press-in dereliction grid cell piece of front test platform；Start the xenon lamp of mechanism for testing so that dereliction grid cell piece electroluminescent, while measure the electrical property of dereliction grid cell piece.The crystal silicon solar dereliction grid cell piece IV method of testings and device, electrode is pressed into using screen net structure, ensure that the accuracy of measurement, plummer adsorbs the cell piece back side so that cell piece keeps pressure balance during measurement up and down, so as to avoid the rupture of cell piece.
Description
Technical field
The present invention relates to crystal silicon solar batteries built-in testing technical field, more particularly to a kind of crystal silicon solar without main grid
Cell piece IV test devices.
Background technology
Conventional crystal silicon solar batteries piece at present, the main gate line of 3-5 root silver pastes is had in front, main gate line can be to the sun
Energy battery surface is blocked, and so as to influence absorption of the cell piece to light, and then influences its generating efficiency.
Follow-up new crystal silicon solar batteries piece, front main grid line are cancelled, but for testing the electrical property of cell piece
New difficulty is brought again.Conventional solar battery sheet measurement at present is the mechanism measurement cell piece using two rows probe row
Electrical property.Efficient solar battery sheet (solar battery sheet of IBC, MWT technology) is then that positive and negative electrode is all introduced to the back of the body
Face, tested so as to overleaf collect electrical property signal.
Existing dereliction grid solar cell piece measurement equipment probe row the shortcomings that be：The pressure of upper and lower probe row is uneven
It is even, cause crystal silicon solar batteries piece to rupture；Using tack probe, if solar cell plate electrode aoxidizes, then probe
Head can not be pierced into electrode, cause measurement inaccurate.
The content of the invention
It is an object of the invention to provide a kind of crystal silicon solar dereliction grid cell piece IV test devices, ensure measurement accuracy
While, avoid the rupture of cell piece.
In order to solve the above technical problems, the embodiments of the invention provide a kind of crystal silicon solar dereliction grid cell piece IV tests
Method, including：
Dereliction grid cell piece is transported to the top of cell piece carrying platform, position of the aligning gear to dereliction grid cell piece
It is corrected；
Rise the cell piece carrying platform, after vacuum suction cell piece, withdraw the aligning gear；
Rise the test faller gill of the cell piece carrying platform so that the test faller gill is pierced into the dereliction grid cell piece
The back side；
Push front test platform so that the screen net structure of the front test platform is pressed into the dereliction grid cell piece
Front gate line；
Start the xenon lamp of mechanism for testing so that the dereliction grid cell piece electroluminescent, while measure the no main grid
The electrical property of cell piece.
Wherein, the depth that the test faller gill is pierced into the back side of the dereliction grid cell piece is 0.1mm.
Wherein, in the xenon lamp of the startup mechanism for testing, the electroluminescent started, while the no main grid is measured
After the electrical property of cell piece, in addition to：
After cell piece carrying platform release vacuum 0.5s, decline the cell piece carrying platform so that the nothing
Main grid cell piece is placed on feed belt, and the dereliction grid cell piece is passed into next station by the feed belt.
In addition, the embodiment of the present invention additionally provides a kind of crystal silicon solar dereliction grid cell piece IV test devices, bag
Include：
Aligning gear, the aligning gear are used to be corrected the position of dereliction grid cell piece；
Test platform, the test platform include front test platform and cell piece carrying platform, the cell piece carrying
Platform is used to place the dereliction grid cell piece, and the front of the cell piece carrying platform is provided with multiple vacuum absorption holes, uses
In adsorbing the dereliction grid cell piece, the cell piece carrying platform is provided with the upward test faller gill in direction, the lower probe
Row is pierced into the back side of the dereliction grid cell piece；Front test platform, the bottom of the front test platform are provided with silk screen knot
Structure, for after the screen net structure is pressed into the front gate line of the dereliction grid cell piece, being total to the cell piece carrying platform
With the measurement completed to the electrical property of the dereliction grid cell piece.
Wherein, the depth that the test faller gill is pierced into the back side of the dereliction grid cell piece is 0.1mm.
Wherein, a plurality of metal corresponding with the front gate line of the dereliction grid cell piece is provided with the net frame structure
Silk thread, the tinsel narrow with the reduction width of height
Wherein, multiple vacuum absorption holes composition vacuum absorption holes rows, the vacuum absorption holes row and the lower probe
Row be arranged in parallel.
Wherein, the cell piece carrying platform also includes being used to appear hole for the probe of the test faller gill lifting.
Wherein, the vacuum absorption holes row equidistantly sets with adjacent vacuum absorption holes row or the test faller gill
Put, and/or vacuum absorption holes described in two rows are provided between test faller gill described in adjacent two row and are arranged.
Wherein, the front of the cell piece carrying platform is provided with least one avoidance parallel with the test faller gill
Groove, the escape groove are used to place the conveyer belt for being used for that the dereliction grid cell piece for completing test to be sent to next station.
The crystal silicon solar dereliction grid cell piece IV method of testings and device that the embodiment of the present invention is provided, with prior art
Compare, there is advantages below：
Crystal silicon solar dereliction grid cell piece IV method of testings provided in an embodiment of the present invention, including：
Dereliction grid cell piece is transported to the top of cell piece carrying platform, position of the aligning gear to dereliction grid cell piece
It is corrected；
Rise the cell piece carrying platform, after vacuum suction cell piece, withdraw the aligning gear；
Rise the test faller gill of the cell piece carrying platform so that the test faller gill is pierced into the dereliction grid cell piece
The back side；
Push front test platform so that the screen net structure of the front test platform is pressed into the dereliction grid cell piece
Front gate line；
Start the xenon lamp of mechanism for testing so that the dereliction grid cell piece electroluminescent, while measure the no main grid
The electrical property of cell piece.
The crystal silicon solar dereliction grid cell piece IV tests that the embodiment of the present invention provided in an embodiment of the present invention additionally provides
Device, including：
Aligning gear, the aligning gear are used to be corrected the position of dereliction grid cell piece；
Test platform, the test platform include front test platform and cell piece carrying platform, the cell piece carrying
Platform is used to place the dereliction grid cell piece, and the front of the cell piece carrying platform is provided with multiple vacuum absorption holes, uses
In adsorbing the dereliction grid cell piece, the cell piece carrying platform is provided with the upward test faller gill in direction, the lower probe
Row is pierced into the back side of the dereliction grid cell piece；Front test platform, the bottom of the front test platform are provided with silk screen knot
Structure, for after the screen net structure is pressed into the front gate line of the dereliction grid cell piece, being total to the cell piece carrying platform
With the measurement completed to the electrical property of the dereliction grid cell piece.
The crystal silicon solar dereliction grid cell piece IV method of testings and device, electrode is pressed into by using screen net structure,
The accuracy of measurement is ensure that, the cell piece back side is adsorbed using plummer so that cell piece keeps pressure to put down during measurement up and down
Weighing apparatus, so as to avoid the rupture of cell piece.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
A kind of specific reality for the crystal silicon solar dereliction grid cell piece IV method of testings that Fig. 1 is provided by the embodiment of the present invention
Apply the step schematic flow sheet of mode；
The test platform one for the crystal silicon solar dereliction grid cell piece IV test devices that Fig. 2 is provided by the embodiment of the present invention
The front view schematic diagram of kind embodiment；
The cell piece carrying for the crystal silicon solar dereliction grid cell piece IV test devices that Fig. 3 is provided by the embodiment of the present invention
The vertical view figure structure schematic representation of platform；
The screen net structure for the crystal silicon solar dereliction grid cell piece IV test devices that Fig. 4 is provided by the embodiment of the present invention
A kind of structural representation.
Embodiment
Just as described in the background section, the shortcomings that the probe row of existing dereliction grid solar cell piece measurement equipment
It is：The pressure of upper and lower probe row is uneven, causes crystal silicon solar batteries piece to rupture；Using tack probe, if solar-electricity
Pond plate electrode aoxidizes, then probe can not be pierced into electrode, causes measurement inaccurate.
Based on this, the embodiments of the invention provide a kind of crystal silicon solar dereliction grid cell piece IV method of testings, including：
Dereliction grid cell piece is transported to the top of cell piece carrying platform, position of the aligning gear to dereliction grid cell piece
It is corrected；
Rise the cell piece carrying platform, after vacuum suction cell piece, withdraw the aligning gear；
Rise the test faller gill of the cell piece carrying platform so that the test faller gill is pierced into the dereliction grid cell piece
The back side；
Push front test platform so that the screen net structure of the front test platform is pressed into the dereliction grid cell piece
Front gate line；
Start the xenon lamp of mechanism for testing so that the dereliction grid cell piece electroluminescent, while measure the no main grid
The electrical property of cell piece.
In addition, it is provided in an embodiment of the present invention to additionally provide a kind of crystal silicon solar dereliction grid cell piece IV tests dress
Put, including：
Aligning gear, the aligning gear are used to be corrected the position of dereliction grid cell piece；
Test platform, the test platform include front test platform and cell piece carrying platform, the cell piece carrying
Platform is used to place the dereliction grid cell piece, and the front of the cell piece carrying platform is provided with multiple vacuum absorption holes, uses
In adsorbing the dereliction grid cell piece, the cell piece carrying platform is provided with the upward test faller gill in direction, the lower probe
Row is pierced into the back side of the dereliction grid cell piece；Front test platform, the bottom of the front test platform are provided with silk screen knot
Structure, for after the screen net structure is pressed into the front gate line of the dereliction grid cell piece, being total to the cell piece carrying platform
With the measurement completed to the electrical property of the dereliction grid cell piece.
In summary, crystal silicon solar dereliction grid cell piece IV method of testings provided in an embodiment of the present invention and device, lead to
Cross using screen net structure press-in electrode, ensure that the accuracy of measurement, the cell piece back side is adsorbed using plummer so that up and down
Cell piece keeps pressure balance during measurement, so as to avoid the rupture of cell piece.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Detail is elaborated in the following description in order to fully understand the present invention.But the present invention can with it is a variety of not
Other manner described here is same as to implement, those skilled in the art can do class in the case of without prejudice to intension of the present invention
Like popularization.Therefore the present invention is not limited to the specific embodiments disclosed below.
Fig. 1 is refer to, the crystal silicon solar dereliction grid cell piece IV method of testings that Fig. 1 is provided by the embodiment of the present invention
A kind of step schematic flow sheet of embodiment.
In a kind of concrete mode, the crystal silicon solar dereliction grid cell piece IV method of testings, including：
Step 10, dereliction grid cell piece is transported to the top of cell piece carrying platform, aligning gear is to dereliction grid cell
The position of piece is corrected；
Step 20, rise the cell piece carrying platform, after vacuum suction cell piece, withdraw the aligning gear；
Step 30, the test faller gill of the cell piece carrying platform is risen so that the test faller gill is pierced into the dereliction
The back side of grid cell piece；
Step 40, front test platform is pushed so that the screen net structure of the front test platform is pressed into the no main grid
The front gate line of cell piece；
Step 50, the xenon lamp of mechanism for testing is started so that the dereliction grid cell piece electroluminescent, while measure described
The electrical property of dereliction grid cell piece.
The crystal silicon solar dereliction grid cell piece IV method of testings, electrode is pressed into by using screen net structure, ensure that
The accuracy of measurement, the cell piece back side adsorbing using plummer so that cell piece keeps pressure balance during measurement up and down, so as to
Avoid the rupture of cell piece.
The back side that test faller gill is pierced into dereliction grid cell piece is and dereliction grid cell when causing test in order to form loop
Piece keeps stable, ensures the accuracy of measurement, and the general test faller gill is pierced into the depth at the back side of the dereliction grid cell piece
For 0.1mm.
Because measurement electrical parameter is the one side to being detected in dereliction grid cell piece, in actually measuring, can also
The other parameters of measurement dereliction grid cell piece detection, therefore the xenon lamp for starting mechanism for testing, the electroluminescent started,
After the electrical property for measuring the dereliction grid cell piece simultaneously, in addition to：
Step 60, after cell piece carrying platform release vacuum 0.5s, the cell piece carrying platform is declined so that
The dereliction grid cell piece is placed on feed belt, and the dereliction grid cell piece is passed into next work by the feed belt
Position.
In addition, the embodiment of the present invention additionally provides a kind of crystal silicon solar dereliction grid cell piece IV test devices, such as
Shown in Fig. 2-4, including：
Aligning gear, the aligning gear are used to be corrected the position of dereliction grid cell piece；
Test platform 10, the test platform include front test platform 11 and cell piece carrying platform 12, the battery
Piece carrying platform 12 is used to place the dereliction grid cell piece, and the front of the cell piece carrying platform 22 is provided with multiple vacuum
Adsorption hole 1211, for adsorbing the dereliction grid cell piece, the cell piece carrying platform 12 is provided with the upward test in direction
Faller gill, the test faller gill are pierced into the back side of the dereliction grid cell piece；Front test platform 11, the front test platform 11
Bottom be provided with screen net structure 111, for being pressed into the front gate line of the dereliction grid cell piece in the screen net structure 111
Afterwards, the measurement to the electrical property of the dereliction grid cell piece is completed jointly with the cell piece carrying platform 12.
The crystal silicon solar dereliction grid cell piece IV devices, electrode is pressed into by using screen net structure 111, ensure that survey
The accuracy of amount, the cell piece back side is adsorbed using plummer so that cell piece keeps pressure balance during measurement up and down, so as to keep away
Exempt from the rupture of cell piece.
The back side that test faller gill is pierced into dereliction grid cell piece is and dereliction grid cell when causing test in order to form loop
Piece keeps stable, ensures the accuracy of measurement, and the general test faller gill is pierced into the depth at the back side of the dereliction grid cell piece
For 0.1mm.
The front gate line of cell piece is pressed into using screen net structure 111, form loop with test faller gill carries out electricity to cell piece
Performance measurement is learned, general screen net structure 111 can be arranged on a framework, by the metal for changing the silk screen on screen frame 1111
Width, length, spacing and the quantity of silk thread 1112, electricity performance measurement is carried out to different types of dereliction grid cell piece, it is right
It is a plurality of with the dereliction grid cell piece in being provided with the annexation of tinsel 1112 and screen frame 1111, general screen frame 1111
The corresponding tinsel 1112 of front gate line, the tinsel 1112 narrows with the reduction width of height, ensures net
Frame 1111 can be with all front gate line good contacts.It should be noted that the present invention is to the screen net structure 111 and institute
Material of net frame structure etc. is stated to be not specifically limited.
Because the front of cell piece carrying platform 12 is provided with, vacuum suction is empty and probe is arranged, to ensure structural strength,
Vacuum absorption holes 1211 and the general all concentrated settings of probe row, vacuum absorption holes are formed in multiple vacuum absorption holes 1211
1211 rows, the row of vacuum absorption holes 1211 be arranged in parallel with the test faller gill.It should be noted that vacuum absorption holes 2211
Other modes can also be used to set with probe row, as by the way of concentric circles setting, both ensured the good suction to cell piece
It is attached, ensure good contact of the probe to cell piece again, but vacuum absorption holes 1211 use multiple rows of set-up modes, easily
The efficiency vacuumized is improved, the lifting of probe is smaller to the influence vacuumized.
The probe of probe row when not in use, easily scratches staff, while probe causes to damage, very troublesome,
Therefore typically probe is covered up when not in use in probe, the general cell piece carrying platform 12 also includes being used for described in confession
The probe of test faller gill lifting appears hole 1212, and in measurement, probe appears sky by probe and penetrates the cell piece back side,
After measurement, probe returns to probe and appeared in hole 1212, ensure that probe will not be damaged easily when not in use.
Preferably, the row of vacuum absorption holes 1211 and the adjacent row of the vacuum absorption holes 1211 or the test faller gill
The row of vacuum absorption holes 1211 described in two rows is provided between spaced set, and/or test faller gill described in adjacent two row.
, it is necessary to which cell piece is removed after the electricity performance measurement by cell piece, to improve measurement efficiency, the electricity
The front of pond piece carrying platform 12 is provided with least one escape groove 123 parallel with the test faller gill, the escape groove 123
For placing the conveyer belt 122 for being used for that the dereliction grid cell piece for completing test to be sent to next station.General cell piece
The front of carrying platform 12 is provided with two parallel escape groove 123.
Cell piece carrying platform 12 generally comprises structure and plummer back shroud on plummer, structure and is held on plummer
Plummer sealing ring can be typically set between microscope carrier back shroud, for ensureing the efficiency that vacuumizes to vacuum absorption holes 1211, protected
Demonstrate,prove air tight or few gas leakage.Set on plummer back shroud with the structure cell body for test needle lifting, it is necessary to illustrate, originally
Shape and structure of the invention to the structure cell body and the specific up-down mode to test needle lifting are not specifically limited.
Can use manual up-down mode to the up-down mode of lower probe, electronic up-down mode can also be used,
As long as ensure the accuracy of the displacement of the lifting of lower probe.
In summary, crystal silicon solar dereliction grid cell piece IV method of testings provided in an embodiment of the present invention and device, lead to
Cross using screen net structure press-in electrode, ensure that the accuracy of measurement, the cell piece back side is adsorbed using plummer so that up and down
Cell piece keeps pressure balance during measurement, so as to avoid the rupture of cell piece.
Crystal silicon solar dereliction grid cell piece IV method of testings provided by the present invention and device have been carried out in detail above
Introduce.Specific case used herein is set forth to the principle and embodiment of the present invention, the explanation of above example
It is only intended to help the method and its core concept for understanding the present invention.It should be pointed out that the ordinary skill people for the art
For member, under the premise without departing from the principles of the invention, some improvement and modification can also be carried out to the present invention, these improve and
Modification is also fallen into the protection domain of the claims in the present invention.
Claims (10)
- A kind of 1. crystal silicon solar dereliction grid cell piece IV method of testings, it is characterised in that including：Dereliction grid cell piece is transported to the top of cell piece carrying platform, aligning gear is carried out to the position of dereliction grid cell piece Correction；Rise the cell piece carrying platform, after vacuum suction cell piece, withdraw the aligning gear；Rise the test faller gill of the cell piece carrying platform so that the test faller gill is pierced into the back of the body of the dereliction grid cell piece Face；Push front test platform so that the screen net structure of the front test platform is pressed into the front of the dereliction grid cell piece Grid line；Start the xenon lamp of mechanism for testing so that the dereliction grid cell piece electroluminescent, while measure the dereliction grid cell The electrical property of piece.
- 2. crystal silicon solar dereliction grid cell piece IV method of testings as claimed in claim 1, it is characterised in that the lower probe The depth that row is pierced into the back side of the dereliction grid cell piece is 0.1mm.
- 3. crystal silicon solar dereliction grid cell piece IV method of testings as claimed in claim 2, it is characterised in that in the startup The xenon lamp of mechanism for testing, the electroluminescent started, while after measuring the electrical property of the dereliction grid cell piece, also wrap Include：After cell piece carrying platform release vacuum 0.5s, decline the cell piece carrying platform so that the no main grid Cell piece is placed on feed belt, and the dereliction grid cell piece is passed into next station by the feed belt.
- A kind of 4. crystal silicon solar dereliction grid cell piece IV test devices, it is characterised in that including：Aligning gear, the aligning gear are used to be corrected the position of dereliction grid cell piece；Test platform, the test platform include front test platform and cell piece carrying platform, the cell piece carrying platform For placing the dereliction grid cell piece, the front of the cell piece carrying platform is provided with multiple vacuum absorption holes, for inhaling The attached dereliction grid cell piece, the cell piece carrying platform are provided with the upward test faller gill in direction, the test faller gill thorn Enter the back side of the dereliction grid cell piece；Front test platform, the bottom of the front test platform are provided with screen net structure, use After the front gate line of the dereliction grid cell piece is pressed into the screen net structure, completed jointly with the cell piece carrying platform Measurement to the electrical property of the dereliction grid cell piece.
- 5. crystal silicon solar dereliction grid cell piece IV test devices as claimed in claim 4, it is characterised in that the lower probe The depth that row is pierced into the back side of the dereliction grid cell piece is 0.1mm.
- 6. crystal silicon solar dereliction grid cell piece IV test devices as claimed in claim 5, it is characterised in that the silk screen knot The a plurality of tinsel corresponding with the front gate line of the dereliction grid cell piece is provided with structure, the tinsel is with height The reduction width of degree narrows.
- 7. crystal silicon solar dereliction grid cell piece IV test devices as claimed in claim 6, it is characterised in that multiple described true Empty adsorption hole composition vacuum absorption holes row, the vacuum absorption holes row be arranged in parallel with the test faller gill.
- 8. crystal silicon solar dereliction grid cell piece IV test devices as claimed in claim 6, it is characterised in that the cell piece Carrying platform also includes being used to appear hole for the probe of the test faller gill lifting.
- 9. crystal silicon solar dereliction grid cell piece IV test devices as claimed in claim 8, it is characterised in that the vacuum is inhaled Attached hole row and adjacent vacuum absorption holes row or the test faller gill spaced set, and/or test described in adjacent two row Vacuum absorption holes described in two rows are provided between faller gill to arrange.
- 10. crystal silicon solar dereliction grid cell piece IV test devices as claimed in claim 9, it is characterised in that the battery The front of piece carrying platform is provided with least one escape groove parallel with the test faller gill, and the escape groove, which is used to place, to be used In the conveyer belt that the dereliction grid cell piece for completing test is sent to next station.
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| CN201610216990.1A CN105827201B (en) | 2016-04-08 | 2016-04-08 | A kind of crystal silicon solar dereliction grid cell piece IV test devices |
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| CN201610216990.1A CN105827201B (en) | 2016-04-08 | 2016-04-08 | A kind of crystal silicon solar dereliction grid cell piece IV test devices |
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| CN105827201B true CN105827201B (en) | 2018-03-06 |
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| CN108133898A (en) * | 2017-12-19 | 2018-06-08 | 泰州隆基乐叶光伏科技有限公司 | A kind of solar cell electric performance testing device |
| CN110299296A (en) * | 2018-03-23 | 2019-10-01 | 成都晔凡科技有限公司 | The method and system that cell piece for imbrication component is tested |
| EP3783797A4 (en) * | 2018-04-18 | 2022-02-09 | Sumitomo Electric Industries, Ltd. | Pressure test method for solar power generation device housing unit |
| CN110246924A (en) * | 2019-05-10 | 2019-09-17 | 江苏润阳悦达光伏科技有限公司 | Crystal silicon solar batteries piece corrects conducting bar |
| CN116559692A (en) * | 2023-05-12 | 2023-08-08 | 天合光能股份有限公司 | Battery testing device and battery testing rapid positioning method |
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| CN102749567A (en) * | 2012-06-29 | 2012-10-24 | 欧贝黎新能源科技股份有限公司 | All-back electrode solar battery test platform |
| CN103490724A (en) * | 2013-09-05 | 2014-01-01 | 上海伟信新能源科技有限公司 | Full-back contact solar cell test bench |
| CN203949943U (en) * | 2014-07-14 | 2014-11-19 | 陕西众森电能科技有限公司 | Solar cell testing fixture for electrical property |
| CN105375880B (en) * | 2015-11-27 | 2017-10-27 | 中国电子科技集团公司第四十八研究所 | A kind of back contact solar cell built-in testing platform |
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