CN105826302B - 晶片衬底移除 - Google Patents
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Abstract
本申请案涉及晶片衬底移除。半导体装置形成在半导体衬底上,包含所述衬底的主要部分。所述半导体装置的有源组件安置在所述衬底的所述主要部分中。互连区形成在所述衬底的顶部表面上。在隔离区中将半导体材料从所述衬底移除,所述隔离区与所述衬底的所述主要部分分开;所述隔离区从所述衬底的所述顶部表面延伸至所述衬底的底部表面。介质替换材料形成在所述隔离区中。所述半导体装置进一步包含未安置在所述衬底的所述主要部分中的隔离组件。所述隔离区中的所述介质替换材料将所述隔离组件与所述衬底的所述主要部分分开。
Description
相关申请案的交叉参考
本申请案依据U.S.C.§119(e)要求2015年1月28日申请的美国临时申请案62/108,799(德克萨斯仪器(Texas Instruments)档案号TI 75685PS)的优先权利,其全文以引用的方式并入本文中。
技术领域
本发明涉及半导体装置领域。更具体地,本发明涉及半导体装置中的隔离结构。
背景技术
许多电路应用具有与其它组件隔离以改进电路的功能的组件。在一个实例中,一些电路应用使用被动式组件(诸如电容器、感应器和变压器)用于信号通信或电力传输。当这些被动式组件与其它组件一起被安置在半导体装置中时,耦合至半导体装置的衬底非期望地劣化被动式组件的性能。或者,将被动式组件安置在单独芯片中非期望地增加电路应用的成本。在另一个实例中,一些电路具有必须与其它有源组件电隔离的有源组件。形成深隔离结构(诸如深井、埋层和沉淀区)或将有源组件安置在单独芯片中非期望地增加电路应用的成本。
发明内容
下文呈现简化概要以提供对本发明的一或多个方面的基本理解。本概要并非本发明的全面综述,并且也非旨在识别本发明的主要或关键元件,也非划定其范围。而是,概要的主要目的是以简化形式呈现本发明的一些概念作为在下文所呈现的更详细描述的序言。
半导体装置形成在包括半导体材料的衬底上。互连区形成在衬底的顶部表面上。半导体材料在从衬底的顶部表面延伸至衬底的底部表面的隔离区中移除,从而留下衬底的主要部分。介质替换材料形成在隔离区中。半导体装置的有源组件被安置在衬底的主要部分中。半导体装置进一步包含隔离组件,所述隔离组件未被安置在衬底的主要部分中。隔离区中的介质替换材料将隔离组件与衬底的主要部分分开。
附图说明
图1A至图1C是含有隔离区和隔离组件的实例半导体装置的视图。
图2A至图2C是含有隔离区和隔离组件的另一个实例半导体装置的视图。
图3A至图3C是含有隔离区和隔离组件的进一步实例半导体装置的视图。
图4A至图4G是含有隔离区和隔离组件的半导体装置的横截面,其在形成半导体装置的实例过程的关键步骤中描绘。
图5A至图5H是含有隔离区和隔离组件的半导体装置的横截面,其在形成半导体装置的另一个实例过程的关键步骤中描绘。
图6是含有隔离区和隔离组件的半导体装置的横截面,其在形成半导体装置的进一步实例过程的关键步骤中描绘。
图7是含有隔离区的多个半导体装置的透视图,其展示切割的实例图。
具体实施方式
本发明参考附图描述。图未按比例绘制,且它们仅被提供来说明本发明。下文参考用于说明的实例应用描述本发明的若干方面。应了解,许多具体细节、关系和方法经阐述以提供对本发明的理解。然而,相关领域的技术人员将易于了解,本发明可在无特定细节中的一或多个的情况下实践或可结合其它方法实践。在其它实例中,众所周知的结构或操作未详细示出以避免混淆本发明。本发明不受限于所说明的行动或事件的排序,因为一些动作可能按不同顺序发生及/或与其它动作或事件同时发生。此外,无需所有所说明的动作或事件来实施根据本发明的方法。
半导体装置形成在包括半导体材料的衬底上。含有接触件和金属线和可能的穿孔的互连区形成在衬底的顶部表面上。半导体材料在从衬底的顶部表面延伸至衬底的底部表面的隔离区中移除,从而留下衬底的主要部分。介质替换材料形成在隔离区中。半导体装置的有源组件被安置在衬底的主要部分中。半导体装置进一步包含未被安置在衬底的主要部分中的隔离组件。隔离区中的介质替换材料将隔离组件与衬底的主要部分分开。隔离组件可能被安置在互连区中,其中隔离区位于隔离组件下方,使得衬底的主要部分低于并且侧向邻近隔离组件。隔离组件可能被安置在衬底的通过隔离区与衬底的主要部分侧向分开的一部分中。
图1A至图1C是含有隔离区和隔离组件的实例半导体装置的视图。参考作为顶部透视图的图1A,半导体装置100包含衬底102,所述衬底102包括半导体材料,诸如硅。衬底102可能来自块状半导体晶片,并且可能任选地包含半导体材料的外延层。半导体装置100包含衬底102的顶部表面106处的互连区104。互连区104包含介质材料层、一级或更多级金属线、将金属线连接至衬底102中的组件的接触件,和可能连接不同级的金属线的穿孔。半导体装置100进一步包含隔离区108,其中半导体材料已从衬底102移除并且用介质替换材料110替换。在本实例中,隔离区108中的介质替换材料110侧向围绕衬底102的隔离部分112。衬底102的主要部分114在隔离区108外部并且邻接隔离区108。在本实例中,主要部分114侧向围绕隔离区108和隔离部分112。隔离区108将隔离部分112与衬底102的主要部分114分开。互连区104在隔离区108上方连续。互连区104在互连区104的与衬底102的顶部表面106相对的面处具有顶部表面118。在本实例中,半导体装置100包含互连区104的顶部表面118处的接合垫116。
参考作为穿过半导体装置100的横截面的图1B,隔离区108从衬底102的底部表面120垂直延伸至互连区104。介质替换材料110实质上填充隔离区108。介质替换材料110可包含有机介质材料,诸如环氧树脂、聚酰亚胺或苯并环丁烯(BCB)。或者,介质替换材料110可包含由含硅氧烷的溶液或溶胶凝胶形成的无机介质材料,诸如基于陶瓷或二氧化硅的无机材料。介质替换材料110未完全覆盖衬底102的底部表面120。在本实例中,底部表面120实质上无介质替换材料110。在图1B中被描绘为反相器的隔离组件122被安置在衬底102的隔离部分112中。隔离区108中的介质替换材料110将隔离组件122与衬底102的主要部分114分开。半导体装置100的有源组件124被安置在衬底102的主要部分114中。衬底102的厚度126可为针对减薄衬底102的200微米至针对全厚度衬底102的600微米。在本实例中,隔离区108的宽度128可为(例如)10微米至500微米。互连区104中的接触件130、金属线132和穿孔134提供至隔离组件122和有源式组件124以及至接合垫116的电连接。
参考作为半导体装置100的底部透视图的图1C,衬底102的底部表面120实质上无隔离区108的介质替换材料110。与将隔离部分112安置在单独的半导体装置中相比,将衬底102的隔离部分112安置在半导体装置100中可有利地减小使用半导体装置100的电路应用的总成本。
图2A至图2C是含有隔离区和隔离组件的另一个实例半导体装置的视图。参考作为顶部透视图的图2A,半导体装置200包含衬底202,所述衬底202包括半导体材料,例如如参考图1A所描述。半导体装置200包含衬底202的顶部表面206处的互连区204。互连区204包含介质材料层、一级或更多级金属线、将金属线连接至衬底202中的组件的接触件,和可能连接不同级的金属线的穿孔。半导体装置200进一步包含隔离区208,其中半导体材料已从衬底202移除并且用介质替换材料210替换。衬底202的主要部分214在隔离区208外部并且邻接隔离区208。在本实例中,主要部分214侧向围绕隔离区208。在本实例中,隔离区208中的介质替换材料210位于互连区204的隔离部分212下方。隔离部分212侧向邻近衬底202的主要部分214,但互连区204的隔离部分212不与衬底202的主要部分214重叠。衬底的半导体材料的虚拟元件236可能任选地存在于隔离区208中,该虚拟元件236被介质替换材料210围绕以减小介质替换材料210的凹陷。虚拟元件236不含有有源组件。互连区204在互连区204的与衬底202的顶部表面206相对的面处具有顶部表面218。在本实例中,半导体装置200包含互连区204的顶部表面218处的焊料凸块216。
参考作为穿过半导体装置200的横截面的图2B,隔离区208从衬底202的底部表面220延伸至互连区204。介质替换材料210实质上填充隔离区208。介质替换材料210可包含有机介质材料或无机介质材料。介质替换材料210未覆盖衬底202的底部表面220。在本实例中,底部表面220实质上无介质替换材料210。在图2B中描绘为电容器的隔离组件222安置在互连区204的隔离部分212中。隔离区208中的介质替换材料210将隔离组件222与衬底202的主要部分214分开。半导体装置200的一或多个有源组件224安置在衬底202的主要部分214中。衬底202的厚度226可为针对减薄衬底202的200微米至针对全厚度衬底202的600微米。在本实例中,依据隔离组件222的大小,隔离区208的宽度228可为(例如)100微米至3000微米。任选的虚拟元件236(若存在)可减小邻近衬底202的底部表面220的介质替换材料210的凹陷。互连区204中的接触件230、金属线232和穿孔234提供至隔离组件222和有源组件224的电连接。与将隔离组件222安置在单独装置中相比,将隔离组件222安置在半导体装置200的互连区204中可有利地减小使用半导体装置200的电路应用的总成本。
参考作为半导体装置200的底部透视图的图2C,衬底202的底部表面220实质上无隔离区208的介质替换材料210。可选的虚拟元件236(若存在)可有利地将介质替换材料210提供为实质上与衬底202的底部表面220共面,其可促进将半导体装置200安装在载板或板中。
图3A至图3C是含有隔离区和隔离组件的进一步实例半导体装置的视图。参考作为顶部透视图的图3A,半导体装置300包含衬底302,所述衬底302包括半导体材料,例如如参考图1A所描述。半导体装置300包含衬底302的顶部表面306处的互连区304。互连区304包含介质材料层、一级或更多级金属线、将金属线连接至衬底302中的组件的接触件,和可能连接不同级的金属线的穿孔。半导体装置300进一步包含隔离区308,其中半导体材料已从衬底302移除并且用介质替换材料310替换。在本实例中,隔离区308延伸至半导体装置300的侧向边界,并且将衬底302的隔离部分312与衬底302的主要部分314分开。互连区304在隔离区308上方连续。互连区304在互连区304的与衬底302的顶部表面306相对的面处具有顶部表面318。
参考作为穿透半导体装置300的横截面的图3B,隔离区308从衬底302的底部表面320延伸至互连区304。介质替换材料310实质上填充隔离区308。介质替换材料310可包含有机介质材料或无机介质材料。介质替换材料310不覆盖衬底302的底部表面320,且在本实例中,底部表面320实质上无介质替换材料310。图3B中未示出的隔离组件被安置在衬底302的隔离部分312中。隔离区308中的介质替换材料310将衬底302的隔离部分312中的隔离组件与衬底302的主要部分314分开。图3B中未示出的一或多个有源组件被安置在衬底302的主要部分314中。衬底302的厚度326可为针对减薄衬底302的200微米至针对全厚度衬底302的600微米。在本实例中,隔离区308的宽度328可为(例如)10微米至500微米。互连区304中的接触件、金属线和穿孔提供至隔离组件和有源组件的电连接。在本实例中,半导体装置300在隔离部分312及/或主要部分314中包含延伸穿过衬底302的穿衬底穿孔(TSV)316。与将隔离组件安置在单独装置中相比,将隔离组件安置在衬底302的隔离部分312中可有利地减小使用半导体装置300的电路应用的总成本。
参考作为半导体装置300的底部透视图的图3C,衬底302的底部表面320实质上无隔离区308的介质替换材料310。衬底302的隔离部分312与隔离区308之间的边界可(例如)用指状图案或燕尾图案勾勒轮廓以改进半导体装置300的机械完整性。衬底302的主要部分314与隔离区308之间的边界可被勾勒轮廓以提供相似优点。
图4A至图4G是含有隔离区和隔离组件的半导体装置的横截面,其在形成半导体装置的实例过程的关键步骤中描绘。参考图4A,半导体装置400形成在衬底402上,所述衬底402包括半导体材料,诸如硅。衬底402可为含有多个半导体装置的块状半导体晶片。衬底402可能任选地包含半导体材料的外延层。半导体装置400包含形成在衬底402的顶部表面406处的互连区404。互连区404包含介质材料层、一级或更多级金属线、将金属线连接至衬底402中的组件的接触件,和可能连接不同级的金属线的穿孔。半导体装置400包含图4A中未示出的隔离组件。在本实例中,半导体装置400包含互连区404的顶部表面418处或邻近互连区404的顶部表面418的接合垫416。
半导体装置400安装在载板438上,其中互连区404的顶部表面418最靠近载板438,且衬底402的底部表面420被暴露。载板438可为(例如)硅晶片或陶瓷片。半导体装置400可用临时接合材料440(诸如布鲁尔科技(Brewer Science)HT-10.10)安装至载板438。
衬底402的厚度426可为500微米至600微米,例如,商用硅晶片的全厚度。替或者,厚度426可为200微米至300微米,由在形成互连区404后(例如)通过反向研磨减薄衬底402导致。衬底402的厚度426的其它值在本实例的范围内。
参考图4B,隔离掩模442在衬底402的底部表面42处形成以暴露用于隔离区408的区域。隔离掩模442可主要包含通过光刻工艺形成的光阻剂。主要由光阻剂形成隔离掩模442具有低制造成本的优点,并且可适于减薄衬底402。或者,隔离掩模442可主要包含通过等离子体增强化学气相沉积(PECVD)工艺形成的硬掩模材料,诸如氮化硅、碳化硅或非晶碳。主要由硬掩模材料形成隔离掩模442具有耐用性和尺寸稳定性的优点,并且可适于全厚度衬底402。通过隔离掩模442暴露的区域可如在参考图1A至图3C公开的实例中的任一者中所描述。
参考图4C,衬底402的半导体材料在通过隔离掩模442暴露的区域中移除以形成隔离区408。衬底402的半导体材料可通过深度反应离子蚀刻(DRIE)工艺移除。DRIE工艺(被称作波希(Bosch)工艺)的一个实例替代地移除经蚀刻区的底部处的材料并且钝化经蚀刻区的侧壁以维持经蚀刻区的期望轮廓。另一个实例是连续DRIE工艺,其同时交替移除经蚀刻区的底部处的材料以及钝化经蚀刻区的侧壁。隔离区408延伸至互连区404。在本实例的一个版本中,移除少量互连区404。
参考图4D,图4C的隔离掩模442被移除。隔离掩模442中的光阻剂可通过灰化工艺或臭氧蚀刻工艺,紧接着通过湿式清洁工艺而移除。隔离掩模442中的硬掩模材料可通过可针对衬底402中的半导体材料和互连区404中的介质层选择的等离子体蚀刻工艺移除。
参考图4E,含介质流体液滴444通过类似于喷墨设备的液滴输送设备446输送至隔离区408。含介质流体液滴444可包含(例如)未经固化环氧树脂、未经固化聚酰亚胺、未经固化BCB、陶瓷浆料、溶胶凝胶或含硅氧烷流体,诸如甲基倍半硅氧烷(MSQ)。含介质流体液滴444可包含溶剂或其它挥发性流体,其随后被移除。含介质流体液滴444可包含两种反应性组分流体,诸如环氧树脂和硬化剂,其紧接在从液滴输送设备446输送之前混合。液滴输送设备446和半导体装置400可(例如)以光栅扫描模式或矢量扫描模式相对于彼此侧向移动,以将含介质流体液滴444输送至隔离区408中,而不将含介质流体液滴444输送至衬底402的底部表面420上。在本实例的一个版本中,半导体装置400可保持固定,而液滴输送设备446在两个维度上侧向移动。在另一个版本中,液滴输送设备446可保持固定,而半导体装置400在两个维度上侧向移动。在进一步版本中,液滴输送设备446可在一个维度上移动,而半导体装置400可在第二正交维度上移动。隔离区填充有来自含介质流体液滴444的含介质流体448。含介质流体448可包含依序输送的两种单独流体:第一含介质流体448a,其首先被输送,且因此被安置为邻近互连区404;和第二含介质流体448b,其其次被输送,且因此被安置在第一含介质流体448a上。两种单独的第一含介质流体448a和448b可提供期望的机械完整性。液滴输送设备446可经配置以输送直径为几微米的液滴444。隔离区408的宽度428可为10微米至25微米,其可减小半导体装置400的总大小且因此有利地减小制造成本。与其它方法相比,使用液滴输送设备446在具有10微米至25微米的宽度428的隔离区408中形成含介质流体448可有利地减小制造成本和复杂性。载板438有利地维持衬底402的尺寸稳定性并且在隔离区408被填充的同时减小互连区404上的应力。在本实例的变化形式中,半导体装置400可在填充隔离区408之前从载板438移除,并且在隔离区408被填充时由诸如真空卡盘的替代构件支撑。
参考图4F,隔离区408中的图4E的含介质流体448根据需要被固化、干燥或以其它方式处理以在隔离区408中形成介质材料410。半导体装置400可(例如)在真空或惰性环境中烘焙以将含介质流体448转化为介质材料410。
参考图4G,将半导体装置400从图4F的载板438移除。可(例如)通过加热图4F的临时接合材料440以软化临时接合材料440,且将半导体装置400侧向滑离载板438而移除半导体装置400。临时接合材料440随后(例如)通过在有机溶剂中溶解而移除。
图5A至图5H是含有隔离区和隔离组件的半导体装置的横截面,其在形成半导体装置的另一个实例过程的关键步骤中描绘。参考图5A,半导体装置500形成在衬底502上,如参考图4A所描述。衬底502可为含有多个半导体装置的块状半导体晶片。半导体装置500包含形成在衬底502的顶部表面506处的互连区504。互连区504包含介质材料层、一级或更多级金属线、将金属线连接至衬底502中的组件的接触件,和可能连接不同级的金属线的穿孔。半导体装置500包含图5A中未示出的隔离组件。在本实例中,半导体装置500包含互连区504的顶部表面518处的焊料凸块516。
保护性涂层550形成在互连区504的顶部表面518上方,覆盖焊料凸块516。保护性涂层550可包含一或多层有机材料,诸如酚醛树脂。保护性涂层550可通过旋涂有机树脂和适当溶剂(诸如丙二醇单甲醚醋酸酯(PGMEA))的混合物,紧接着通过烘焙移除大多数溶剂而形成。适于形成保护性涂层550的实例商用产品是由陶氏化学公司(Dow ChemicalCompany)制造的Microposit FSC-M。旋涂可有利地为保护性涂层550的顶部表面552提供期望平坦度。
参考图5B,半导体装置500安装在载板538上,其中保护性涂层550的顶部表面552最靠近载板538,且衬底502的底部表面520被暴露。半导体装置500可用临时接合材料540安装至载板538。载板538和临时接合材料540可如参考图4A所描述。保护性涂层550在半导体装置500被安装在载板538上时有利地减小对焊料凸块516的应力和损坏。
衬底502的厚度526的范围可介于针对全厚度的商用硅晶片的500微米至600微米到针对减薄衬底502的200微米至300微米。衬底502的厚度526的其它值在本实例的范围内。
参考图5C,隔离掩模542在衬底502的底部表面520处形成以暴露隔离区508的区域。隔离掩模542可主要包含光阻剂或可包含硬掩模材料,如参考图4B所描述。通过隔离掩模542暴露的区域可如在参考图1A至图3C公开的实例的任一者中所描述。在本实例中,隔离掩模542包含用于隔离区508的区域中的虚拟掩模元件554。
参考图5D,在通过隔离掩模542暴露的区域中移除衬底502的半导体材料以形成隔离区508。衬底502的半导体材料可通过DRIE工艺移除,如参考图4C所描述。虚拟掩模元件554阻挡衬底502的半导体材料的移除,使得虚拟元件536由隔离区508中的衬底502的半导体材料形成。隔离区508延伸至互连区504。在本实例的一个版本中,移除少量互连区504。
参考图5E,图5D的隔离掩模542被移除,例如如参考图4D所描述。介质填充材料层556形成在隔离区508中和衬底502的底部表面520上。介质填充材料层556可包含有机介质材料,诸如BCB或聚酰亚胺,及/或可包含无机材料,诸如基于二氧化硅的介质材料、陶瓷或溶胶凝胶。介质填充材料层556可通过旋涂,紧接着通过干燥或固化、化学气相沉积或等离子体工艺(诸如高密度等离子体(HDP)工艺)而形成。介质填充材料层556同时填充隔离区508的10微米宽至100微米宽的窄部分和隔离区508的超过200微米宽的宽部分,与其它方法相比,其可有利地减少循环时间和制造成本。
参考图5F,介质填充材料层556从衬底502的底部表面520移除,从而在隔离区508中留下介质填充材料层556。介质填充材料层556可通过如图5F中所描绘的化学机械抛光(CMP)工艺558而从底部表面520移除。虚拟元件536可有利地通过CMP工艺减小凹陷。或者,介质填充材料层556可通过反向蚀刻工艺(诸如各向同性等离子体蚀刻工艺)被移除。图5F描绘将介质填充材料层556从底部表面520移除的过程的半途的半导体装置500。
图5G描绘将图5F的介质填充材料层556从底部表面520移除的过程完成之后的半导体装置500。保留在隔离区508中的介质填充材料层556提供介质替换材料510。虚拟元件536可有利地提供介质替换材料510可接受地与衬底502的底部表面520共面。此时可对介质替换材料510执行进一步固化或干燥。
参考图5H,半导体装置500从图5G的载板538移除。可(例如)通过加热图5G的临时接合材料540以软化临时接合材料540,且将半导体装置500侧向滑离载板538而移除半导体装置500。临时接合材料540随后(例如)通过在有机溶剂中溶解而移除。相似地,图5G的保护性涂层550(例如)通过溶解在有机溶剂中而从互连区504的顶部表面518移除。临时接合材料540和保护性涂层550可与适当溶剂同时移除。
图6是含有隔离区和隔离组件的半导体装置的横截面,其在形成半导体装置的进一步实例过程的关键步骤中描绘。半导体装置600形成在衬底602上,如参考图4A所描述。衬底602可为含有多个半导体装置的块状半导体晶片。半导体装置600包含在衬底602的顶部表面606处形成的互连区604。互连区604包含介质材料层、一级或更多级金属线、将金属线连接至衬底602中的组件的接触件,和可能连接不同级的金属线的穿孔。半导体装置600包含图5A中未示出的隔离组件。在本实例中,半导体装置600包含延伸穿过衬底602的TSV616;互连区604的顶部表面618无金属结构。在用于隔离区608的区域中移除衬底602的半导体材料,例如,如参考图4B至图4D所描述。
半导体装置600被安置在平台660上,所述平台660可为晶片卡盘或真空卡盘。分配设备662将含介质流体664的连续流输送至隔离区608中。连续流与基于液滴的输送方式不同。含介质流体664可包含(例如)未经固化环氧树脂、未经固化聚酰亚胺、未经固化BCB、陶瓷浆料、溶胶凝胶或含硅氧烷流体。含介质流体664可包含溶剂或其它挥发性流体,其随后被移除。含介质流体664可包含两种反应性组分流体,诸如环氧树脂和硬化剂,其紧接在从分配设备662输送之前混合。含介质流体664可包含依序分配的两个单独流体,如参考图4E所描述。分配设备662和半导体装置600可相对于彼此侧向移动,以将含介质流体664输送至隔离区608中,而不将含介质流体664输送至衬底602的底部表面620上。隔离区填充有含介质流体664。分配设备662可能特别适于比其它方法更快地填充具有大于200微米的宽度628的隔离区608,其可减小制造成本。在本实例的变化形式中,半导体装置600可在填充隔离区608之前安装在载板上,如在本文中的其它实例中所描述。隔离区608中的含介质流体664根据需要被固化、干燥或以其它方式处理以在隔离区608中形成稳定介质材料。
图7是含有隔离区的多个半导体装置的透视图,其示出切割的示例性图。半导体装置700形成在包括半导体材料的衬底702上。衬底702可为可能具有外延层的硅晶片。每个半导体装置700包含形成在衬底702的顶部表面706上的互连区704。隔离区708形成在衬底702中,用介质替换材料710替换衬底702的半导体材料,例如,如在本文中的实例中所描述。划线766分开相邻半导体装置700。划线766为切割半导体装置700提供空间。划线766可为(例如)50微米至250微米宽。与隔离区708中的介质替换材料710组合的衬底702是跨越划线766连续的。在本实例中,介质替换材料710和隔离区708跨越划线766延伸。
随后(例如)通过锯切、机械划割、激光划割或劈裂沿着划线766切割半导体装置700。切割工艺切穿划线766中的介质替换材料710。将隔离区708组态为跨越划线766连续可实现半导体装置700的更大设计范围并且有利地减小大小以及降低制造成本。
虽然上文已描述本发明的各种实施例,但是应了解,它们仅作为实例而非限制呈现。可根据本文中的揭示内容对所公开的实施例做出许多改变,而不脱离本发明的精神或范围。因此,本发明的宽度和范围不应受限于上述实施例中的任一者。而是,本发明的范围应根据以下权利要求和其等效物界定。
Claims (20)
1.一种半导体装置,其包括:
衬底,其包括半导体材料,所述衬底具有主要部分;
有源组件,其安置在所述衬底的所述主要部分中;
互连区,其安置在所述衬底的顶部表面上;
隔离区,其与所述衬底的所述主要部分分开,所述隔离区从所述衬底的所述顶部表面延伸至所述衬底的底部表面,所述隔离区无所述半导体材料,所述互连区在所述隔离区上方连续;
介质替换材料,其安置在所述隔离区中,其中所述介质替换材料未完全覆盖所述衬底的所述底部表面;和
隔离组件,其通过所述隔离区中的所述介质替换材料与所述衬底的所述主要部分分开。
2.根据权利要求1所述的半导体装置,其中所述隔离组件安置在所述互连区中,且所述隔离区安置在所述隔离组件下方。
3.根据权利要求2所述的半导体装置,其中所述隔离组件为电容器。
4.根据权利要求2所述的半导体装置,其中所述隔离区超过100微米宽。
5.根据权利要求1所述的半导体装置,其中所述隔离区将所述衬底的所述主要部分与所述衬底的隔离部分分开,且所述隔离组件安置在所述衬底的所述隔离部分中。
6.根据权利要求5所述的半导体装置,其中所述隔离区侧向围绕所述衬底的所述隔离部分,且所述主要部分侧向围绕所述隔离区。
7.根据权利要求5所述的半导体装置,其中所述隔离区延伸至所述半导体装置的侧向边界。
8.根据权利要求5所述的半导体装置,其中所述隔离区的宽度为10微米至25微米。
9.根据权利要求1所述的半导体装置,其中所述介质替换材料包括有机介质材料。
10.根据权利要求1所述的半导体装置,其中所述介质替换材料包括无机介质材料。
11.根据权利要求1所述的半导体装置,其进一步包括安置在所述隔离区中的所述半导体材料的虚拟元件,所述虚拟元件由所述介质替换材料围绕,所述虚拟元件无有源组件。
12.一种形成半导体装置的方法,其包括下列步骤:
提供包括半导体材料的衬底;
在所述衬底的主要部分中形成有源组件;
在所述衬底的顶部表面上形成互连区;
在与所述衬底的所述主要部分分开的隔离区中移除所述衬底的所述半导体材料,所述隔离区从所述衬底的所述顶部表面延伸至所述衬底的底部表面,所述互连区在所述隔离区上方连续;
在所述隔离区中形成介质替换材料;和
在所述半导体装置中形成隔离组件,使得所述隔离组件通过所述隔离区中的所述介质替换材料与所述衬底的所述主要部分分开。
13.根据权利要求12所述的方法,其包括在于所述隔离区中移除所述衬底的所述半导体材料之前,在所述互连区的顶部表面上方形成保护性涂层。
14.根据权利要求12所述的方法,其包括将所述半导体装置安装在载板上,其中所述互连区的顶部表面最靠近所述载板且所述衬底的所述底部表面被暴露。
15.根据权利要求12所述的方法,其中在所述隔离区中形成所述介质替换材料包括将含介质流体液滴从液滴输送设备分配至所述隔离区中。
16.根据权利要求12所述的方法,其中在所述隔离区中形成所述介质替换材料包括在所述隔离区中和在所述衬底的所述底部表面上形成介质填充材料层以及将所述介质填充材料层从所述衬底的所述底部表面移除,从而在所述隔离区中留下所述介质填充材料层。
17.根据权利要求12所述的方法,其中在所述隔离区中形成所述介质替换材料包括将含介质流体的连续流从分配设备输送至所述隔离区中。
18.根据权利要求12所述的方法,其中所述隔离区中的所述介质替换材料包括有机介质材料。
19.根据权利要求12所述的方法,其中所述隔离区中的所述介质替换材料包括无机介质材料。
20.根据权利要求12所述的方法,其中所述介质替换材料和所述隔离区跨越邻近所述半导体装置的划线延伸,且包括穿过所述划线中的所述介质替换材料切割所述半导体装置。
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