CN105823759A - Surface plasma resonance sensor based on silicon optical waveguides on insulator - Google Patents
Surface plasma resonance sensor based on silicon optical waveguides on insulator Download PDFInfo
- Publication number
- CN105823759A CN105823759A CN201610424241.8A CN201610424241A CN105823759A CN 105823759 A CN105823759 A CN 105823759A CN 201610424241 A CN201610424241 A CN 201610424241A CN 105823759 A CN105823759 A CN 105823759A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- output
- plasma resonance
- surface plasma
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
- G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optical Integrated Circuits (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a surface plasma resonance sensor based on silicon optical waveguides on an insulator. The surface plasma resonance sensor comprises a micro-sensing chip and an input optical fiber and an output optical fiber which are connected with the two ends of the micro-sensing chip respectively; the micro-sensing chip comprises an input coupling limiting groove, an input waveguide mode converter, a ridge waveguide, an output waveguide mode converter, an output coupling limiting groove, bent waveguide medium grooves, a to-be-measured substance filling area, a sensitive material layer and a metal material layer which are sequentially connected, wherein the bent waveguide medium grooves are formed in the waveguide bent positions and filled with a material with the low refractive index, and the to-be-measured substance filling area is arranged at the middle bent position of the ridge waveguide. According to the surface plasma resonance sensor, the conception is ingenious, output light energy capable of being detected by the output end is suddenly reduced through changes of the refractive index by utilizing the surface plasma resonance excitation principle at the optical waveguide bent positions, relevant parameters of gas or liquid are accurately measured under the wavelength scanning condition and all measured on the basis of the optical principle, and the anti-external-disturbance capacity is high.
Description
Technical field
The present invention relates to micro-sensor technologies field, specifically, relate to a kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide, the relevant parameter that can be used for gas or liquid is measured.
Background technology
At present, commercial gas sensor is semiconductor transducer or electrochemical sensor mostly, and output signal is generally the signal of telecommunication, typically has a size of more than Centimeter Level.Due to output is voltage or current signal, often big by external interference, causes that sensor error is big, certainty of measurement is the highest, also needs to support circuit, such as I/V conversion, pre-amplification circuit etc. the most in actual applications.Semiconductor gas sensor the most often also needs to preheat for a long time, the certainty of measurement that guarantee is higher, and response speed is slower.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the present invention provides that a kind of size is little, precision is high, strong interference immunity and the surface plasma resonance sensor based on silicon-on-insulator fiber waveguide that can remotely measure.
To achieve these goals, the technical solution used in the present invention is as follows:
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide, including micro sensing chip, and the input optical fibre that is connected respectively with micro sensing chip two ends and output optical fibre；nullDescribed micro sensing chip includes the input coupling stopper slot for installing input optical fibre，The input waveguide mode converter mated with input optical fibre end，Stopper slot is coupled for installing the output of output optical fibre，The output waveguide mode converter mated with output optical fibre end，Two ends respectively the most bendingly with input waveguide mode converter、Ridge waveguide that is that output waveguide mode converter connects and that there is kink in the middle part of it，It is arranged at ridge waveguide and input waveguide mode converter、The bending place that output waveguide mode converter connects and the bending waveguide medium groove of filling low-index material，It is arranged at the test substance fill area at kink in the middle part of ridge waveguide，And it is arranged at the test substance fill area sensitive material towards surface, ridge waveguide direction and metal material layer with stacking gradually，Wherein，Described test substance fill area is positioned at micro sensing chip edge.Preferably, input optical fibre and output optical fibre all use telecommunication optical fiber.
Specifically, described input waveguide mode converter, ridge waveguide and output waveguide mode converter are all for the fiber waveguide being made up of silicon-on-insulator material.
Further, the cross section structure of described fiber waveguide is basal layer, insulating barrier, waveguide device layer and the cover layer stacked gradually from the bottom to top, wherein, there is the ridge of projection in described waveguide device layer center towards cover layer direction, the corresponding position respective recesses of described cover layer；The center of described input optical fibre and output optical fibre is to should ridge position.Described covering layer material is the low-index material such as SU-8 or silicon dioxide, and described waveguide device layer material is silicon, and described insulating layer material is silicon dioxide, and described base layer material is silicon.
Further, described input coupling stopper slot and output coupling stopper slot are to be made by etching cover layer, waveguide device layer, insulating barrier and basal layer in micro sensing chip end positions, for limiting the position relationship of input and output light and waveguide core, it is achieved waveguide and the end face Butt-coupling of optical fiber.
Further, described input waveguide mode converter and output waveguide mode converter are taper, constitute tapered transmission line, change from small to big to the junction with input light and output light from the junction of ridge waveguide, in order to the waveguide mode that fiber end face coupling inputs is converted into micro sensing chip internal can single mode transport waveguide mode.
In order to improve certainty of measurement, kink in described ridge waveguide utilizes bending number of times to contact the sensitive material and metal material layer arranged on described test substance fill area at least twice, and is also equipped with filling the bending waveguide medium groove of low-index material in the bending place away from test substance fill area.
Further, the low-index material filled in described bending waveguide medium groove is identical with the covering layer material of described fiber waveguide, the mirror surface that the low-index material of this filling is relative with formation density on the interface of the waveguide device layer material of fiber waveguide.
Specifically, described bending waveguide medium groove, by cover layer, is etched through downwards cover layer and waveguide device layer stops to surface of insulating layer.
Further, described metal material layer thickness is nanometer scale, and light produces plasma resonance after exciting.
For the ease of measuring, the refractive index of described sensitive material changes with the implant of test substance fill area and changes.
And, described test substance fill area, by cover layer, is etched through downwards cover layer and waveguide device layer stops to surface of insulating layer.
Compared with prior art, the method have the advantages that
(1) present inventive concept is ingenious, utilize the surface plasma resonance excitation principle of fiber waveguide bending place, by the change of refractive index, the light energy output making outfan be able to detect that is die-offed, the relevant parameter of gas/liquid is accurately measured in the case of length scanning, and be all based on optical principle and measure, anti-external interference is (such as mechanical vibration, electromagnetic interference etc.) ability strong, and size is little, only have hundreds of microns of sizes, simultaneously because use single-mode fiber communication, can realize remotely measuring, can be used for the measurement of gas/liquid in narrow and small hermetic container or space, can also be used for the measurement of some hazardous areas, it is with a wide range of applications, it is suitable for popularization and application.
(2) in the present invention, fiber waveguide uses twice bending that structure is identical in test substance fill area, excite plasma resonance successively, further reduce the energy that outfan can detect so that the disappearance peak in the case of length scanning is more sharp-pointed, so that sensor has higher sensitivity.
Accompanying drawing explanation
Fig. 1 is the external structure schematic diagram of the present invention.
Fig. 2 is the plan structure schematic diagram of micro sensing chip in the present invention.
Fig. 3 is the schematic cross-section of fiber waveguide in the present invention.
Fig. 4 is the schematic diagram utilizing media slot to realize bending waveguide in the present invention.
Fig. 5 is the axonometric drawing of micro sensing chip in the present invention.
Fig. 6 is the principle schematic of waveguide bending place excitating surface plasma resonance in the present invention.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings, and embodiments of the present invention include but not limited to the following example.
Embodiment
As shown in Figures 1 to 6, should surface plasma resonance sensor based on silicon-on-insulator fiber waveguide, including micro sensing chip 1, and the input optical fibre 2 that is connected respectively with micro sensing chip two ends and output optical fibre 3；nullDescribed micro sensing chip is to be made with technique by micro-nano process technology on silicon materials on insulator，Mainly include the input coupling stopper slot 101 for installing input optical fibre，The input waveguide mode converter 102 mated with input optical fibre end，Stopper slot 109 is coupled for installing the output of output optical fibre，The output waveguide mode converter 108 mated with output optical fibre end，Two ends respectively the most bendingly with input waveguide mode converter、Ridge waveguide 103 that is that output waveguide mode converter connects and that there is kink in the middle part of it，It is arranged at ridge waveguide and input waveguide mode converter、The bending place that output waveguide mode converter connects and the bending waveguide medium groove 104 of filling low-index material，It is arranged at the test substance fill area 107 at kink in the middle part of ridge waveguide，And it is arranged at the test substance fill area sensitive material 106 towards surface, ridge waveguide direction and metal material layer 105 with stacking gradually，Wherein，Described test substance fill area is positioned at micro sensing chip edge.Preferably, input optical fibre and output optical fibre all use telecommunication optical fiber.
Specifically, described input waveguide mode converter, ridge waveguide and output waveguide mode converter are all for the fiber waveguide being made up of silicon-on-insulator material.Further, the cross section structure of described fiber waveguide is basal layer 111, insulating barrier 112, waveguide device layer 113 and the cover layer 114 stacked gradually from the bottom to top, wherein, there is the ridge 115 of projection, the corresponding position respective recesses of described cover layer in described waveguide device layer center towards cover layer direction；The center of described input optical fibre and output optical fibre is to should ridge position.Described covering layer material is the low-index material such as SU-8 or silicon dioxide, and described waveguide device layer material is silicon, and described insulating layer material is silicon dioxide, and described base layer material is silicon.Further, described input coupling stopper slot and output coupling stopper slot are to be made by etching cover layer, waveguide device layer, insulating barrier and basal layer in micro sensing chip end positions, for limiting the position relationship of input and output light and waveguide core, it is achieved waveguide and the end face Butt-coupling of optical fiber.
Further, described input waveguide mode converter and output waveguide mode converter are taper, constitute tapered transmission line, change from small to big to the junction with input light and output light from the junction of ridge waveguide, in order to the waveguide mode that fiber end face coupling inputs is converted into micro sensing chip internal can single mode transport waveguide mode.
In order to improve certainty of measurement, kink in described ridge waveguide utilizes bending number of times to contact the sensitive material and metal material layer arranged on described test substance fill area at least twice, and is also equipped with filling the bending waveguide medium groove of low-index material in the bending place away from test substance fill area.
Further, the low-index material filled in described bending waveguide medium groove is identical with the covering layer material of described fiber waveguide, the mirror surface that the low-index material of this filling is relative with formation density on the interface of the waveguide device layer material of fiber waveguide.Specifically, described bending waveguide medium groove, by cover layer, is etched through downwards cover layer and waveguide device layer stops to surface of insulating layer.Big reflection efficiency is had, it is desirable to the length and width of media slot is enough in order to ensure waveguide transmission mode.Described metal material layer thickness is nanometer scale, and light produces plasma resonance after exciting.
For the ease of measuring, the refractive index of described sensitive material changes with the implant of test substance fill area and changes.And, described test substance fill area, by cover layer, is etched through downwards cover layer and waveguide device layer stops to surface of insulating layer.
When the present invention works, input optical fibre one end connects tunable laser, and the other end realizes the end face Butt-coupling of fiber-to-waveguide by the input coupling stopper slot on micro sensing chip, makes the waveguide mode in input pattern transducer be excited.Under the effect of mode converter, in waveguide mode onwards transmission to ridge waveguide, the bending waveguide medium groove of first waveguide bending place of experience makes to transmit direction and is changed.When being transferred to the parameter sensitivity layer of chip edge, the test substance parameter in test substance fill area is carried out sensitivity so that the waveguide mode of outfan occurs corresponding change.Then, waveguide mode experiences another bending waveguide medium groove, changes direction, makes input optical fibre, output optical fibre, input waveguide mode converter, output waveguide mode converter on same straight line.Then, waveguide mode carries out end face Butt-coupling through output waveguide mode converter at output coupling stopper slot and output optical fibre, thus the output of optical information.Owing to input optical fibre, output optical fibre all use telecommunication optical fiber, sensor of the invention can realize remotely measuring.
In the case of tunable laser output different wave length carries out length scanning, sensor sheet reveals the corresponding relation of wavelength at test substance parameter and energy disappearance peak.Surface plasma resonance (SPR) excitation principle on bending end face is as shown in Figure 6, when in waveguide, the waveguide mode of transmission is transferred to bending place, meet under certain matching condition at bending angle θ, waveguide mode effective refractive index, optical wavelength, metal material layer Refractive Index of Material and sensitive material Refractive Index of Material, the surface plasmon resonance ripple (SPW) along metal material layer Yu the separating surface onwards transmission of sensitive material will be produced, so that the light energy output of bending waveguide output end is die-offed.
Utilizing the structure of the present invention, the ridge waveguide twice bending structure parameter in test substance fill area is identical.If bending place excites SPR for the first time, major part energy is made to make the energy that can be transferred to second time bending place in ridge waveguide die-off along the separating surface transmission of metal material layer with sensitive material, the SPR energy being able to detect that so that whole sensor output that is excited is less again, can be thus that the disappearance peak in the case of length scanning is more sharp-pointed, so that sensor has higher sensitivity.
Above-described embodiment is only the preferred embodiments of the present invention, not limiting the scope of the invention, as long as using the design principle of the present invention, and carries out non-creativeness work on this basis and the change made, within all should belonging to protection scope of the present invention.
Claims (10)
1. a surface plasma resonance sensor based on silicon-on-insulator fiber waveguide, it is characterised in that include micro sensing chip, and the input optical fibre that is connected respectively with micro sensing chip two ends and output optical fibre；nullDescribed micro sensing chip includes the input coupling stopper slot for installing input optical fibre，The input waveguide mode converter mated with input optical fibre end，Stopper slot is coupled for installing the output of output optical fibre，The output waveguide mode converter mated with output optical fibre end，Two ends respectively the most bendingly with input waveguide mode converter、Ridge waveguide that is that output waveguide mode converter connects and that there is kink in the middle part of it，It is arranged at ridge waveguide and input waveguide mode converter、The bending place that output waveguide mode converter connects and the bending waveguide medium groove of filling low-index material，It is arranged at the test substance fill area at kink in the middle part of ridge waveguide，And it is arranged at the test substance fill area sensitive material towards surface, ridge waveguide direction and metal material layer with stacking gradually，Wherein，Described test substance fill area is positioned at micro sensing chip edge.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 1, it is characterized in that, described input waveguide mode converter, ridge waveguide and output waveguide mode converter are all for the fiber waveguide being made up of silicon-on-insulator material.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 2, it is characterized in that, the cross section structure of described fiber waveguide is basal layer, insulating barrier, waveguide device layer and the cover layer stacked gradually from the bottom to top, wherein, there is the ridge of projection in described waveguide device layer center, the corresponding position respective recesses of described cover layer towards cover layer direction；The center of described input optical fibre and output optical fibre is to should ridge position.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 2, it is characterized in that, described input waveguide mode converter and output waveguide mode converter are taper, change from small to big to the junction with input light and output light from the junction with ridge waveguide.
5. according to a kind of based on silicon-on-insulator fiber waveguide the surface plasma resonance sensor described in claim 3 or 4, it is characterized in that, kink in described ridge waveguide utilizes bending number of times to contact the sensitive material and metal material layer arranged on described test substance fill area at least twice, and is also equipped with filling the bending waveguide medium groove of low-index material in the bending place away from test substance fill area.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 5, it is characterized in that, the low-index material filled in described bending waveguide medium groove is identical with the covering layer material of described fiber waveguide, the mirror surface that the low-index material of this filling is relative with formation density on the interface of the waveguide device layer material of fiber waveguide.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 5, it is characterised in that described bending waveguide medium groove, by cover layer, is etched through downwards cover layer and waveguide device layer stops to surface of insulating layer.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 5, it is characterised in that described metal material layer thickness is nanometer scale, light produces plasma resonance after exciting.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 5, it is characterised in that the refractive index of described sensitive material changes with the implant of test substance fill area and changes.
A kind of surface plasma resonance sensor based on silicon-on-insulator fiber waveguide the most according to claim 5, it is characterised in that described test substance fill area, by cover layer, is etched through downwards cover layer and waveguide device layer stops to surface of insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610424241.8A CN105823759A (en) | 2016-06-15 | 2016-06-15 | Surface plasma resonance sensor based on silicon optical waveguides on insulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610424241.8A CN105823759A (en) | 2016-06-15 | 2016-06-15 | Surface plasma resonance sensor based on silicon optical waveguides on insulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105823759A true CN105823759A (en) | 2016-08-03 |
Family
ID=56532236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610424241.8A Pending CN105823759A (en) | 2016-06-15 | 2016-06-15 | Surface plasma resonance sensor based on silicon optical waveguides on insulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105823759A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841121A (en) * | 2017-04-12 | 2017-06-13 | 清华大学深圳研究生院 | A kind of SPR biochemical sensors based on ridge optical waveguide |
| CN111272713A (en) * | 2020-03-24 | 2020-06-12 | 聊城大学 | Preparation method of side-excited Kretschmann waveguide SPR sensor |
| CN112067569A (en) * | 2020-08-19 | 2020-12-11 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
| CN112098768A (en) * | 2019-05-30 | 2020-12-18 | 上海新微技术研发中心有限公司 | Method and equipment for testing silicon optical chip |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002014040A (en) * | 2000-06-28 | 2002-01-18 | Suzuki Motor Corp | Spr sensor plate and imunoreaction measuring apparatus using the same |
| JP2003262585A (en) * | 2002-03-08 | 2003-09-19 | Stanley Electric Co Ltd | Method for manufacturing surface plasmon resonance sensor |
| JP2006208359A (en) * | 2004-12-27 | 2006-08-10 | Toshiba Corp | Biochemical sensor chip of optical waveguide type and manufacturing method therefor |
| CN101979963A (en) * | 2010-09-14 | 2011-02-23 | 北京理工大学 | Integrally molded fiber microsensor and manufacturing method thereof |
| WO2013179900A1 (en) * | 2012-06-01 | 2013-12-05 | 日東電工株式会社 | Spr sensor cell and spr sensor |
| CN103837937A (en) * | 2014-03-19 | 2014-06-04 | 清华大学深圳研究生院 | Prism-grating optical waveguide coupler and optical waveguide device |
| CN104390939A (en) * | 2014-12-16 | 2015-03-04 | 湖南师范大学 | Sensor and method for detecting refractive index of liquid in micro-fluid system |
| CN104990655A (en) * | 2015-07-29 | 2015-10-21 | 清华大学深圳研究生院 | Pressure sensor and manufacturing method thereof, pressure detecting system |
-
2016
- 2016-06-15 CN CN201610424241.8A patent/CN105823759A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002014040A (en) * | 2000-06-28 | 2002-01-18 | Suzuki Motor Corp | Spr sensor plate and imunoreaction measuring apparatus using the same |
| JP2003262585A (en) * | 2002-03-08 | 2003-09-19 | Stanley Electric Co Ltd | Method for manufacturing surface plasmon resonance sensor |
| JP2006208359A (en) * | 2004-12-27 | 2006-08-10 | Toshiba Corp | Biochemical sensor chip of optical waveguide type and manufacturing method therefor |
| CN101979963A (en) * | 2010-09-14 | 2011-02-23 | 北京理工大学 | Integrally molded fiber microsensor and manufacturing method thereof |
| WO2013179900A1 (en) * | 2012-06-01 | 2013-12-05 | 日東電工株式会社 | Spr sensor cell and spr sensor |
| CN103837937A (en) * | 2014-03-19 | 2014-06-04 | 清华大学深圳研究生院 | Prism-grating optical waveguide coupler and optical waveguide device |
| CN104390939A (en) * | 2014-12-16 | 2015-03-04 | 湖南师范大学 | Sensor and method for detecting refractive index of liquid in micro-fluid system |
| CN104990655A (en) * | 2015-07-29 | 2015-10-21 | 清华大学深圳研究生院 | Pressure sensor and manufacturing method thereof, pressure detecting system |
Non-Patent Citations (2)
| Title |
|---|
| DENGPENG YUAN 等: "Design of a High-Performance Micro Integrated Surface Plasmon Resonance Sensor Based on Silicon-On-Insulator Rib Waveguide Array", 《SENSORS》 * |
| DENGPENG YUAN 等: "Mach-Zehnder Interferometer Biochemical Sensor Based on Silicon-on-Insulator Rib Waveguide with Large Cross Section", 《SENSORS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841121A (en) * | 2017-04-12 | 2017-06-13 | 清华大学深圳研究生院 | A kind of SPR biochemical sensors based on ridge optical waveguide |
| WO2018188137A1 (en) * | 2017-04-12 | 2018-10-18 | 清华大学深圳研究生院 | Ridge waveguide-based spr biochemical sensor |
| CN112098768A (en) * | 2019-05-30 | 2020-12-18 | 上海新微技术研发中心有限公司 | Method and equipment for testing silicon optical chip |
| CN112098768B (en) * | 2019-05-30 | 2022-04-29 | 上海新微技术研发中心有限公司 | Method and equipment for testing silicon optical chip |
| CN111272713A (en) * | 2020-03-24 | 2020-06-12 | 聊城大学 | Preparation method of side-excited Kretschmann waveguide SPR sensor |
| CN112067569A (en) * | 2020-08-19 | 2020-12-11 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
| CN112067569B (en) * | 2020-08-19 | 2021-09-28 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bernini et al. | Silicon micromachined hollow optical waveguides for sensing applications | |
| CN105823759A (en) | Surface plasma resonance sensor based on silicon optical waveguides on insulator | |
| CN101387496B (en) | Micro-displacement sensor based on ring micro-chamber and cantilever beam of integration plane | |
| CN110018428B (en) | Magnetic field sensor based on silicon-based micro-ring resonator and preparation method thereof | |
| CN206019882U (en) | A kind of nanocomposite optical pressure transducer based on surface plasmon resonance chamber | |
| Heideman et al. | Fabrication and packaging of integrated chemo-optical sensors | |
| CN101871950B (en) | Optical cavity micro-accelerometer based on integrated input/output terminal | |
| CN110389111A (en) | One kind being based on bimodulus core shift optical fiber interference type index sensor | |
| CN103134636A (en) | Optical fiber harmonic oscillator vacuum sensor | |
| CN108663076B (en) | Inclination angle sensor and preparation method thereof | |
| Novo et al. | Integrated fluorescence detection of labeled biomolecules using a prism-like PDMS microfluidic chip and lateral light excitation | |
| CN104776954A (en) | Optically-excited fiber grating cantilever beam harmonic oscillator vacuum degree sensor | |
| CN106841121A (en) | A kind of SPR biochemical sensors based on ridge optical waveguide | |
| CN115950829A (en) | Optical fiber end face sensor, design method and manufacturing method thereof, and optical fiber sensing system | |
| CN203178030U (en) | Optical fiber harmonic oscillator vacuum sensor | |
| CN115524040A (en) | Ultra-sensitive stress sensor structure and system based on optical fiber | |
| Holmes et al. | Quantifying the optical sensitivity of planar Bragg gratings in glass micro-cantilevers to physical deflection | |
| CN115128301A (en) | Optical accelerometer chip based on vernier effect of cascaded double-ring resonant cavity | |
| Van Laere et al. | Compact focusing grating couplers between optical fibers and silicon-on-insulator photonic wire waveguides | |
| CN113252085A (en) | Opto-mechanical microcavity structure containing nonlinear mechanical oscillator, measurement system and measurement method | |
| CN113465515B (en) | Optical mechanical microcavity structure with all-optical integration and nonlinear mechanical oscillator | |
| CN111579535A (en) | Preparation method of core region compression type optical fiber Mach-Zehnder interferometer | |
| Pandraud et al. | PECVD SiC-SiO 2-SiC horizontal slot waveguides for sensing photonics devices | |
| CN113686367B (en) | Sensing structure based on optical fiber coupling induction transparency, manufacturing process and sensing device | |
| CN115575353B (en) | Optical fiber refractive index sensor based on whispering gallery mode and measuring method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160803 |