CN105810778B - MOCVD高温生长高质量GaInNAs子电池的方法 - Google Patents
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Abstract
本发明公开了一种MOCVD高温生长高质量GaInNAs子电池的方法,在MOCVD高温生长GaAs叠层电池的GaInNAs子电池时,通过载气的快速切换,能够降低高温生长GaInNAs子电池时氮元素的掺杂难度,从而生长出所需的高质量GaInNAs子电池,而载气的快速切换则由互锁装置完成;此外,生长GaInNAs子电池前后需生长隧道结GaAs/AlGaAs,而生长GaInNAs子电池前后的隧道结GaAs/AlGaAs使用的载气为H2,生长GaInNAs子电池使用的载气为N2,GaInNAs子电池掺杂氮源为二甲基肼。通过本发明方法能生长出高质量的GaInNAs子电池,最终提高GaAs叠层电池的整体性能。
Description
技术领域
本发明涉及半导体设备设计领域,尤其是指一种MOCVD高温生长高质量GaInNAs子电池的方法。
背景技术
能源是人类社会发展的重要基础资源。由于世界能源资源产地与能源消费中心相距较远,特别是随着世界经济的发展、世界人口的剧增和人民生活水平的不断提高,世界能源需求量持续增大。由此导致对能源资源的争夺日趋激烈、环境污染加重和环保压力加大,使得能源问题成为当今国际政治、经济、军事、外交关注的焦点。发展可再生能源已成为全球实现低碳能源转型的战略目标,也成为我国可持续生态化发展的重大需求。同时,化石能源对环境的污染和全球气候的影响将日趋严重。面对以上挑战,世界能源供应和消费将向多元化、清洁化、高效化、全球化和市场化趋势发展。
鉴于国情,我国应特别注意依靠科技进步和政策引导,提高能源利用效率,寻求能源的清洁化利用,积极倡导能源、环境和经济的可持续发展,并积极借鉴国际先进经验,建立和完善我国能源安全体系。
光伏发电以太阳能电池技术为核心,目前太阳能电池从技术上主要分为3类:以晶硅电池为代表的第一代太阳能电池,以硅基薄膜、CdTe、CICS电池等为代表的第二代薄膜电池和以GaAs叠层电池为代表的第三代太阳能电池。光伏市场主要以第一代和第二代电池为主。然而,晶硅电池成本较高,且由于硅材料本身性质的限制,其光电转换效率很难再有提高,薄膜电池本身效率偏低,投资成本较高,因此,开发高效低成本的第三代太阳能电池不仅必要而且迫切。
目前GaAs基系高效多结叠层太阳电池主要采用三结或四结叠层结构。GaInP/Ga(In)As/Ge三结太阳电池的理论效率值在AM(大气质量)0 1sun条件下为35%,GaInP/Ga(In)As/GaInNAs/Ge四结电池在AM(大气质量)0 1sun的条件下理论转换效率值高达41%以上,可见存在巨大潜在优势。
GaAs叠层电池的GaInNAs子电池适宜生长温度较低,但MOCVD技术在低温环境下生长出来的子电池表面缺陷和杂质比较严重;通过提高温度可以改善GaInNAs子电池表面,但随环境温度升高,GaInNAs子电池氮元素掺杂难度将变大,氮源利用率极低。
发明内容
本发明的目的在于克服现有技术的不足与缺点,提出一种MOCVD高温生长高质量GaInNAs子电池的方法,可有效降低高温生长GaInNAs子电池时氮元素的掺杂难度,从而生长出高质量的GaInNAs子电池。
为实现上述目的,本发明所提供的技术方案为:MOCVD高温生长高质量GaInNAs子电池的方法,在MOCVD高温生长GaAs叠层电池的GaInNAs子电池时,通过载气的快速切换,能够降低高温生长GaInNAs子电池时氮元素的掺杂难度,从而生长出所需的高质量GaInNAs子电池,而载气的快速切换则由互锁装置完成;此外,生长GaInNAs子电池前后需生长隧道结GaAs/AlGaAs,而生长GaInNAs子电池前后的隧道结GaAs/AlGaAs使用的载气为H2,生长GaInNAs子电池使用的载气为N2,GaInNAs子电池掺杂氮源为二甲基肼;其包括以下步骤:
1)生长GaInNAs子电池前,载气为H2,生长一层隧道结GaAs/AlGaAs来连接Ge衬底和GaInNAs子电池,H2流量为80-90L/min,生长温度为540-550℃,生长压力为30Torr,隧道结GaAs/AlGaAs的生长厚度为24-26nm,生长时间为90s;
2)生长GaInNAs子电池时,载气快速切换为N2,载气通过互锁装置自动快速切换,N2的流量为2.8-3L/min,生长温度为590-600℃,生长压力为39Torr,GaInNAs子电池的生长厚度为0.98-1um,生长时间为30min;
3)生长GaInNAs子电池后,载气快速切换为H2,生长一层隧道结GaAs/AlGaAs来连接两个子电池,H2流量为80-90L/min,生长温度为540-550℃,生长压力为30Torr,隧道结GaAs/AlGaAs的生长厚度为24-26nm,生长时间为90s。
H2的纯度即体积百分数大于99.99999%,N2的纯度即体积百分数大于99.999%。
氮气和氢气的进气管路安装互锁装置,互锁装置的开启由生长程序自动控制,当生长GaInNAs子电池时,生长程序输出信号给PLC,PLC控制互锁装置,载气通过互锁装置自动快速切换。
本发明与现有技术相比,具有如下优点与有益效果:
通过将氢气和氮气按照需求进行快速切换,具体是在生长GaInNAs子电池过程中,通过将载气由氢气换成氮气的措施,可以很好地降低在高温环境二甲基肼掺杂源氮元素的掺杂难度,明显减少生长GaInNAs子电池高温环境对惨氮元素的不良影响;GaInNAs子电池半高宽变窄,生长质量变好,从而生长出高质量的GaInNAs子电池,最终提高GaAs叠层电池的整体性能。
附图说明
图1为MOCVD高温生长高质量GaInNAs子电池的结构示意图。
图2为GaAs基四结电池结构示意图。
具体实施方式
下面结合两个具体实施例对本发明作进一步说明。
实施例1
原材料准备如下:
Ga源:三甲基稼(TMGa),饱和蒸汽压113.64Torr;
In源:三甲基铟(TMIn),饱和蒸汽压2.58Torr;
C源:四溴化碳(CBr4),饱和蒸汽压0.82Torr;
Te源:三乙基碲(DeTe),饱和蒸汽压9.33Torr;
N源:二甲基阱(DMHy),饱和蒸汽压165.9Torr;
氮气(N2)纯度:纯度及体积百分数大于99.999%;
氢气(H2)纯度:纯度及体积百分数大于99.99999%;
砷烷(AsH3)纯度:纯度及体积百分数大于99.9999%;
硅烷(Si2H6)纯度:纯度及体积百分数大于99.9999%;
将上述不同原材料按照设定程序进入MOCVD反应腔,进行GaAs基四结电池的GaInNAs子电池的高温生长,具体步骤如下:
1)在生长GaInNAs子电池前,载气为氢气,需生长一层隧道结GaAs/AlGaAs来连接Ge衬底和GaInNAs子电池,此隧道结生长压力为30Torr,厚度为26nm,生长温度为550℃,氢气使用量为90L/min,生长时间为90s。
2)当生长GaInNAs子电池时,载气快速切换为氮气,使用量为3L/min,生长压力为39Torr,GaInNAs子电池的生长厚度为1um,生长温度为600℃,生长时间30min。
3)在生长GaInNAs子电池后,载气快速切换为氢气,需生长一层隧道结GaAs/AlGaAs来连接两个子电池,此隧道生长压力为30Torr,厚度为26nm,生长温度为550℃,氢气使用量为90L/min,生长时间为90s。
如图1所示,本实施例的氮气和氢气的进气管路安装有互锁装置,而互锁装置的开启则由生长程序自动控制,当生长GaInNAs子电池时,生长程序输出信号给PLC,PLC控制互锁装置,载气通过互锁装置实现自动快速切换。
实施例2
1)在生长GaInNAs子电池前,载气为氢气,需生长一层隧道结GaAs/AlGaAs来连接Ge衬底和GaInNAs子电池,此隧道结生长压力为30Torr,厚度为24nm,生长温度为540℃,氢气使用量为80L/min,生长时间为90s。
2)当生长GaInNAs子电池时,载气快速切换为氮气,使用量为2.8L/min。生长GaInNAs子电池时,生长压力为39Torr,厚度为0.98um,生长温度为590℃,生长时间30min。
3)在生长GaInNAs子电池后,载气快速切换为氢气,需生长一层隧道结GaAs/AlGaAs来连接两个子电池,此隧道生长压力为30Torr,厚度为24nm,生长温度为540℃,氢气使用量为80L/min,生长时间为90s。
实施例3
1)在生长GaInNAs子电池前,载气为氢气,需生长一层隧道结GaAs/AlGaAs来连接Ge衬底和GaInNAs子电池,此隧道结生长压力为30Torr,厚度为26nm,生长温度为550℃,氢气使用量为90L/min,生长时间为90s。
2)当生长GaInNAs子电池时,载气为氢气,使用量为3L/min。生长GaInNAs子电池时,生长压力为39Torr,厚度为1um,生长温度为600℃,生长时间30min。
3)在生长GaInNAs子电池后,载气为氢气,需生长一层隧道结GaAs/AlGaAs来连接两个子电池,此隧道生长压力为30Torr,厚度为26nm,生长温度为550℃,氢气使用量为90L/min,生长时间为90s。
实施例4
1)在生长GaInNAs子电池前,载气为氢气,需生长一层隧道结GaAs/AlGaAs来连接Ge衬底和GaInNAs子电池,此隧道结生长压力为30Torr,厚度为24nm,生长温度为540℃,氢气使用量为80L/min,生长时间为90s。
2)当生长GaInNAs子电池时,载气为氢气,使用量为2.8L/min。生长GaInNAs子电池时,生长压力为39Torr,厚度为0.98um,生长温度为590℃,生长时间30min。
3)在生长GaInNAs子电池后,载气为氢气,需生长一层隧道结GaAs/AlGaAs来连接两个子电池,此隧道生长压力为30Torr,厚度为24nm,生长温度为540℃,氢气使用量为80L/min,生长时间为90s。
实施结果
从下表1所示的测试结果可以得到以下结论:
通过测试结果可以看出,相比于实施例3和实施例4(没有使用载气快速切换生长GaInNAs子电池),实施例1和实施例2(使用载气快速切换生长GaInNAs子电池),PL中心波长变大,GaInNAs禁带宽度变窄,证明掺入的氮元素变多;半高宽可以反映晶体的质量,数值越小,说明生长质量越好,因此可以看出使用载气快速切换生长GaInNAs子电池材料质量更好,最终能提高GaAs基四结电池的整体性能,该GaAs基四结电池的结构具体见附图2。
表1:GaInNAs子电池性能测试结果
以上所述实施例只为本发明之较佳实施例,并非以此限制本发明的实施范围,故凡依本发明之形状、原理所作的变化,均应涵盖在本发明的保护范围内。
Claims (3)
1.MOCVD高温生长高质量GaInNAs子电池的方法,其特征在于:在MOCVD高温生长GaAs叠层电池的GaInNAs子电池时,通过载气的快速切换,能够降低高温生长GaInNAs子电池时氮元素的掺杂难度,从而生长出所需的高质量GaInNAs子电池,而载气的快速切换则由互锁装置完成;此外,生长GaInNAs子电池前后需生长隧道结GaAs/AlGaAs,而生长GaInNAs子电池前后的隧道结GaAs/AlGaAs使用的载气为H2,生长GaInNAs子电池使用的载气为N2,GaInNAs子电池掺杂氮源为二甲基肼;其包括以下步骤:
1)生长GaInNAs子电池前,载气为H2,生长一层隧道结GaAs/AlGaAs来连接Ge衬底和GaInNAs子电池,H2流量为80-90L/min,生长温度为540-550℃,生长压力为30Torr,隧道结GaAs/AlGaAs的生长厚度为24-26nm,生长时间为90s;
2)生长GaInNAs子电池时,载气快速切换为N2,载气通过互锁装置自动快速切换,N2的流量为2.8-3L/min,生长温度为590-600℃,生长压力为39Torr,GaInNAs子电池的生长厚度为0.98-1um,生长时间为30min;
3)生长GaInNAs子电池后,载气快速切换为H2,生长一层隧道结GaAs/AlGaAs来连接两个子电池,H2流量为80-90L/min,生长温度为540-550℃,生长压力为30Torr,隧道结GaAs/AlGaAs的生长厚度为24-26nm,生长时间为90s。
2.根据权利要求1所述的MOCVD高温生长高质量GaInNAs子电池的方法,其特征在于:H2的纯度即体积百分数大于99.99999%,N2的纯度即体积百分数大于99.999%。
3.根据权利要求1所述的MOCVD高温生长高质量GaInNAs子电池的方法,其特征在于:氮气和氢气的进气管路安装互锁装置,互锁装置的开启由生长程序自动控制,当生长GaInNAs子电池时,生长程序输出信号给PLC,PLC控制互锁装置,载气通过互锁装置自动快速切换。
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