CN105810773A - Resonant reinforced pyroelectric infrared detector - Google Patents
Resonant reinforced pyroelectric infrared detector Download PDFInfo
- Publication number
- CN105810773A CN105810773A CN201610290352.4A CN201610290352A CN105810773A CN 105810773 A CN105810773 A CN 105810773A CN 201610290352 A CN201610290352 A CN 201610290352A CN 105810773 A CN105810773 A CN 105810773A
- Authority
- CN
- China
- Prior art keywords
- layer
- absorption layer
- infrared detector
- pyroelectric infrared
- metal absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 4
- 229910052744 lithium Inorganic materials 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 8
- 238000002835 absorbance Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000005616 pyroelectricity Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 108091027981 Response element Proteins 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
The invention discloses a resonant reinforced pyroelectric infrared detector, and belongs to the technical field of a pyroelectric detector. An absorption layer in an infrared sensor unit is of a composite layer structure and sequentially comprises a lithium tantalite wafer (2), a first dielectric layer (4), a second metal absorption layer (5), a second dielectric layer (6) and a third metal layer (7) from bottom to top, wherein a metal reflection layer (1) is arranged on the bottom surface of the lithium tantalite wafer (2), a first metal absorption layer (3) is arranged on the top surface of the lithium tantalite wafer (2), and the thickness of the lithium tantalite wafer (2) is 9-17 micrometers. With the adoption of a parallel planar cavity, light rays oscillates in a reciprocating way in a periodic lens waveguide and cannot exceed the waveguide, the frequency of incident light passing through the absorption layer is increased, so that the absorption rate of the absorption layer is indirectly improved, and a stable lens waveguide is formed. By the resonant reinforced pyroelectric infrared detector, the application range of the pyroelectric infrared detector is expanded.
Description
Technical field
The present invention relates to pyroelectric detector electronic technology field, be specifically related to a kind of harmonic intensified pyroelectric infrared detector.
Background technology
Pyroelectric infrared detector is a kind of thermosensitive type Infrared Detectors utilizing the effect that the spontaneous polarization strength of pyroelectricity material changes with temperature to make.At a constant temperature, the spontaneous polarization of pyroelectricity material is neutralized by internal electric charge and surface adsorption electric charge.Pyroelectric infrared detector is widely used in the fields such as warning, infrared imaging, non-contact temperature measuring, gas analysis, all has application in spectrogrph, laser instrument, infrared horizon.Pyroelectric infrared detector belongs to non-refrigerated infrared detector, has working and room temperature, compact conformation, the advantage such as reliable and stable.At 0.8～25 mu m waveband, pyroelectric infrared detector has smooth spectral response.
Heat is released infrared electric explorer and is included optical system, infrared sensor unit, signal processing circuit, output-controlling device；The performance of pyroelectric infrared detector is mainly characterized by response speed and sensitivity, the basic function of the optical system of pyroelectric infrared detector is that Infrared Targets heat energy is converged to pyroelectric sensor surface, the sensitivity obtained is wanted in certain wavelength band, just requiring that the absorbed layer of detector is high to ultrared absorbance, the subsequent treatment for signal lays the foundation simultaneously.Therefore, the absorbed layer design of pyroelectric infrared detector receives increasing attention.
Pyroelectricity material is a kind of electrolyte with spontaneous polarization, and its spontaneous polarization strength varies with temperature；According to below equation:
Wherein, P is polarization intensity, and T is temperature, and dP is polarization intensity change, and dT is variations in temperature；Available formula (1) describes pyroelectric coefficient p；If in the dt time, pyroelectricity material absorptive thermal radiation, variations in temperature dT, polarization intensity change dP, then shown in the electric current such as formula (2) that material unit are produces.
The absorbance of very long wave infrared frequency range rpyroelectric infrared single-element detector absorbed layer is one of its important performance characteristic, directly affect temperature rise speed and the size of detector sensitive layer, therefore, how to improve the absorbance of rpyroelectric infrared single-element detector, thus improving responsiveness and the detectivity of rpyroelectric infrared single-element detector, it it is the major issue in this area.
It is known that optical resonator is one of basic composition of Laser Devices, it is used to strengthen the brightness of Output of laser, the wavelength of adjustment and selected laser and the device in direction, all uses optical resonator from VUV to far overwhelming majority laser systems.Wherein the effect of optical cavity is mainly optics positive feedback effect and produces the control action to vibration light beam.Wherein, the microlaser that micro-cavity laser is a kind of optical resonator by size in micron or sub-micrometer scale and gain media forms, wherein optical resonator is its core.Micro-cavity laser has the advantages that the little energy consumption of volume is low, and can large-scale integrated, and there is much potential using value.
Summary of the invention
In order to overcome the deficiencies in the prior art, the present invention provides the harmonic intensified double absorption layer pyroelectric detector of one that a kind of absorbance is high.
The present invention technical scheme as follows:
A kind of harmonic intensified pyroelectric infrared detector, absorbed layer in its infrared sensor unit is lamination layer structure, include successively from bottom to the top: bottom surface is provided with metallic reflector and end face is provided with the lithium tantalate wafer of the first metal absorption layer, first medium layer, second metal absorption layer, second dielectric layer and the 3rd metal level；Described lithium tantalate wafer thickness is 9～17 microns.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described metallic reflector is nickel-chrome alloy layer, and the thickness range of metallic reflector is 180～220 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described first metal absorption layer is nickel-chrome alloy layer, and the first metal absorption layer thickness range is 6～11 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described second metal absorption layer is nickel-chrome alloy layer, and the second metal absorption layer thickness range is 6～11 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described 3rd metal absorption layer is nickel-chrome alloy layer, and the 3rd metal absorption layer thickness range is 6～11 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described first medium layer is silicon nitride medium layer, and the thickness range of first medium layer is 3～6 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described second dielectric layer is silicon nitride medium layer, and the thickness range of second dielectric layer is 3～6 nanometers.
In the harmonic intensified pyroelectric infrared detector absorbent layer structure of the present invention, the first metal absorption layer, the second metal absorption layer, the 3rd metal absorption layer respectively and define resonator cavity between lithium tantalate wafer, metallic reflector.The present invention adding incident illumination and passes through the number of times of absorbed layer, thus indirectly improve the absorptance of absorbed layer, defining stable lens guide outside adopting plane-parallel resonator that light is vibrated back and forth in periodicity lens guide and not spilling over waveguide.The classification of described plane-parallel resonator belongs to critical resonator, and to the chamber being operated in critical zone, only some specific light could not escape out outside chamber at intracavity round trip, thus realizing the infrared light of specific band is carried out repeatedly resonance absorbing.
Meanwhile, first medium layer, second dielectric layer can form little reflection cavity respectively and repeatedly absorb, accordingly, it is capable to improve detector to a great extent for the absorption of infrared incident illumination, improves absorbance.
Additionally, the structural design that the present invention adopts double-deck absorbed layer makes single absorber thickness relatively thin, thus improve the responsiveness of device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the harmonic intensified pyroelectric infrared detector absorbed layer of one embodiment of the invention；Wherein, 1 is metallic reflector, and 2 is lithium tantalate wafer, and 3 is the first metal absorption layer, and 4 is first medium layer, and 5 is the second metal absorption layer, and 6 is second dielectric layer, and 7 is the 3rd metal level.
Detailed description of the invention
One embodiment of the present of invention structure is described in detail below in conjunction with accompanying drawing.
It is illustrated in figure 1 the absorbed layer of a kind of harmonic intensified pyroelectric infrared detector, described absorbed layer is lamination layer structure, include successively from bottom to the top: bottom surface is provided with metallic reflector 1 and end face is provided with the lithium tantalate wafer 2 of the first metal absorption layer 3, first medium layer 4, second metal absorption layer 5, second dielectric layer 6 and the 3rd metal level 7.
Embodiment:
A kind of harmonic intensified pyroelectric infrared detector includes optical system, infrared sensor unit, signal processing circuit, output-controlling device；Wherein in infrared sensor list, absorbed layer is lamination layer structure, include successively from bottom to the top: bottom surface is provided with metallic reflector 1 and end face is provided with the lithium tantalate wafer 2 of the first metal absorption layer 3, first medium layer 4, the second metal absorption layer 5, second dielectric layer 6 and the 3rd metal level 7.
A kind of harmonic intensified pyroelectric infrared detector, adopts lithium tantalate (LiTaO3) wafer 2 is as the response element of pyroelectric infrared detector, described lithium tantalate (LiTaO3) wafer 2 is as pyroelectricity material, the order of magnitude of its pyroelectric coefficient p is 10-8C/K·cm2, what the thickness of described lithium tantalate wafer should be suitable is thin, and in an embodiment, the thickness of described lithium tantalate wafer is 10 microns, lithium tantalate (LiTaO3) wafer 2 includes bottom surface and end face；Metallic reflector 1 can be nickel-chrome alloy layer, and its thickness is 200 nanometers, and metallic reflector 1 is arranged on the bottom surface of lithium tantalate wafer 2；First metal absorption layer 3 can be nickel-chrome alloy layer, and its thickness is 10 nanometers, and the first metal absorption layer 3 is arranged on the end face of lithium tantalate wafer 2；First medium layer 4 can be silicon nitride medium, and its thickness is 5 nanometers, and first medium layer 4 is located on the end face of the first metal absorption layer 3；Second metal absorption layer 5 can be nickel-chrome alloy layer, and its thickness is 10 nanometers, and the second metal absorption layer 5 is located on the end face of first medium 4；Second dielectric layer 6 can be silicon nitride medium layer, and its thickness can be 5 nanometers, and second dielectric layer 6 is located on the end face of the second metal absorption layer 5；3rd metal absorption layer 7 can be nickel-chrome alloy layer, and its thickness can be 12 nanometers, and the 3rd metal absorption layer 7 is located on the end face of second dielectric layer 6.
In embodiments of the invention, metallic reflector 1, lithium tantalate wafer the 2, first metal absorption layer 3, first medium layer the 4, second metal absorption layer 5, second dielectric layer the 6, the 3rd metal absorption layer 7 are by forming lamination layer structure after controlling thickness.In this lamination layer structure, first metal absorption layer the 3, second metal absorption layer 5 and the 3rd metal absorption layer 7 on lithium tantalate wafer 2 respectively and define resonator cavity between metallic reflector 1, it is possible to the infrared light of specific band is carried out repeatedly resonance absorbing；First medium layer 4 can form little reflection cavity with the second metal absorption layer 5 of the first metal absorption layer 3 of its bottom surface and its end face simultaneously, second dielectric layer 6 can form little reflection cavity with the 3rd metal absorption layer 7 of the second metal absorption layer 5 of its bottom surface and its end face, thus realizing repeatedly absorbing；Accordingly, it is capable to improve detector to a great extent for the absorption of infrared incident illumination, improve absorbance.The harmonic intensified pyroelectric infrared detector of the present invention, after testing this structure absorbing layer film system absorbance >=80% to very long wave infrared band.
Describe the present invention above by specific embodiment, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and the present invention can also make various amendment, equivalent replacement, change etc., these conversion, all should within protection scope of the present invention without departing from the spirit of the present invention.
Claims (7)
1. a harmonic intensified pyroelectric infrared detector, in its infrared sensor unit, absorbed layer is lamination layer structure, it is characterized in that, include successively from bottom to the top: bottom surface is provided with metallic reflector (1) and end face is provided with the lithium tantalate wafer (2) of the first metal absorption layer (3), first medium layer (4), second metal absorption layer (5), second dielectric layer (6) and the 3rd metal level (7)；Described lithium tantalate wafer (2) thickness is 9～17 microns.
2. the harmonic intensified pyroelectric infrared detector of one according to claim 1, it is characterised in that described metallic reflector (1) is nickel-chrome alloy layer, the thickness range of metallic reflector (1) is 180～220 nanometers.
3. the harmonic intensified pyroelectric infrared detector of one according to claim 1, it is characterised in that described first metal absorption layer (3) is nickel-chrome alloy layer, and the first metal absorption layer (3) thickness range is 6～11 nanometers.
4. the harmonic intensified pyroelectric infrared detector of one according to claim 1, it is characterised in that described second metal absorption layer (5) is nickel-chrome alloy layer, and the second metal absorption layer (5) thickness range is 6～11 nanometers.
5. the harmonic intensified pyroelectric infrared detector of one according to claim 1, it is characterised in that described 3rd metal absorption layer (7) is nickel-chrome alloy layer, and the 3rd metal absorption layer (7) thickness range is 6～11 nanometers.
6. the harmonic intensified pyroelectric infrared detector of one according to claim 1, it is characterised in that described first medium layer (4) is silicon nitride medium layer, and the thickness range of first medium layer (4) is 3～6 nanometers.
7. the harmonic intensified pyroelectric infrared detector of one according to claim 1, it is characterised in that described second dielectric layer (6) is silicon nitride medium layer, and the thickness range of second dielectric layer (6) is 3～6 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610290352.4A CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610290352.4A CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105810773A true CN105810773A (en) | 2016-07-27 |
| CN105810773B CN105810773B (en) | 2017-08-25 |
Family
ID=56455251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610290352.4A Expired - Fee Related CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105810773B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883643A (en) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328347A (en) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method |
| US6495828B1 (en) * | 2000-04-17 | 2002-12-17 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate |
| CN101958362A (en) * | 2009-07-17 | 2011-01-26 | 北京邮电大学 | Fabrication method for semiconductor photodetector with nano waveguide structure |
| CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
| CN103259097A (en) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | Terahertz metamaterial unit structure and preparation, adjusting and control method thereof |
| CN103682076A (en) * | 2013-12-18 | 2014-03-26 | 电子科技大学 | Very-long-wave pyroelectric infrared unit detector |
| CN105004430A (en) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | Uncooled infrared focal plane detector photoelectric sensitive unit |
-
2016
- 2016-05-05 CN CN201610290352.4A patent/CN105810773B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495828B1 (en) * | 2000-04-17 | 2002-12-17 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate |
| CN1328347A (en) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method |
| CN101958362A (en) * | 2009-07-17 | 2011-01-26 | 北京邮电大学 | Fabrication method for semiconductor photodetector with nano waveguide structure |
| CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
| CN103259097A (en) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | Terahertz metamaterial unit structure and preparation, adjusting and control method thereof |
| CN103682076A (en) * | 2013-12-18 | 2014-03-26 | 电子科技大学 | Very-long-wave pyroelectric infrared unit detector |
| CN105004430A (en) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | Uncooled infrared focal plane detector photoelectric sensitive unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883643A (en) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105810773B (en) | 2017-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Stewart et al. | Ultrafast pyroelectric photodetection with on-chip spectral filters | |
| US8593229B2 (en) | Atomic oscillator | |
| CN103575407A (en) | Terahertz radiation detector | |
| CN101063630A (en) | Infrared detector structure based on micro-bridge resonator and manufacturing method | |
| US20130134309A1 (en) | Nonlinear optical and electro-optical devices and methods of use thereof for amplification of non-linear properties | |
| CN102998725B (en) | Rough black metal film for absorbing terahertz radiation and preparation method of rough black metal film | |
| CN103682076B (en) | A kind of very long wave rpyroelectric infrared single-element detector | |
| CN103035981A (en) | Ultrathin metal membrane terahertz absorbed layer and preparation method thereof | |
| Chen et al. | Ultrafast silicon nanomembrane microbolometer for long-wavelength infrared light detection | |
| CN106911055B (en) | A kind of four-wave mixing mercury vapour pond using tubular type constant temperature oven and cooling collar | |
| Gou et al. | Spiral antenna-coupled microbridge structures for THz application | |
| KR20140143326A (en) | Terahertz wave detecting device, camera, imaging apparatus and measuring apparatus | |
| CN103035983B (en) | Terahertz radiation absorbing layer and preparation method thereof | |
| CN105810773A (en) | Resonant reinforced pyroelectric infrared detector | |
| CN102288300A (en) | Radiant heat flux measuring device based on bimaterial micro-cantilever beam | |
| CN107907237B (en) | A kind of optical absorption type temperature sensor | |
| JP6269008B2 (en) | Electromagnetic wave-surface polariton conversion element. | |
| CN105789428B (en) | A kind of composite absorption layer pyroelectric infrared detector | |
| Agranat et al. | Inertialess metal glow produced by picosecond pulses | |
| US10254169B2 (en) | Optical detector based on an antireflective structured dielectric surface and a metal absorber | |
| CN106374323A (en) | Laser up-conversion terahertz difference frequency source detecting system | |
| CN113218869A (en) | Medium-far infrared optical detection system and method based on surface modified resonance tuning fork and atomic force probe | |
| CN111442849B (en) | Manufacturing method of miniature near-infrared detector and miniature near-infrared detector | |
| Luo et al. | Metamaterial Signal Sensing Based on Continuous Terahertz Waves | |
| JPS5887435A (en) | Method and device for rapidly measuring energy contained in beam |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Liang Zhiqing Inventor after: Wang Tao Inventor after: Ma Zhendong Inventor after: Wu Liuquan Inventor after: Liu Ziji Inventor before: Liu Ziji Inventor before: Liang Zhiqing Inventor before: Ma Zhendong Inventor before: Wu Liuquan Inventor before: Wang Tao |
|
| CB03 | Change of inventor or designer information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170825 Termination date: 20180505 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |