CN105810773B - A kind of harmonic intensified pyroelectric infrared detector - Google Patents
A kind of harmonic intensified pyroelectric infrared detector Download PDFInfo
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- CN105810773B CN105810773B CN201610290352.4A CN201610290352A CN105810773B CN 105810773 B CN105810773 B CN 105810773B CN 201610290352 A CN201610290352 A CN 201610290352A CN 105810773 B CN105810773 B CN 105810773B
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- infrared detector
- metal absorption
- pyroelectric infrared
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000010521 absorption reaction Methods 0.000 claims abstract description 36
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910001120 nichrome Inorganic materials 0.000 claims description 2
- 230000005574 cross-species transmission Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 230000005616 pyroelectricity Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 108091027981 Response element Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a kind of harmonic intensified pyroelectric infrared detector, belong to pyroelectric detector technical field.Absorbed layer in the infrared sensor unit of the present invention is lamination layer structure, is included successively from bottom to the top：Bottom surface is provided with the lithium tantalate wafer (2) of the first metal absorption layer (3) provided with metallic reflector (1) and top surface, first medium layer (4), second metal absorption layer (5), second dielectric layer (6) and the 3rd metal level (7)；Lithium tantalate wafer (2) thickness is 9~17 microns.The present invention causes light to vibrate and do not spill over outside waveguide back and forth in periodicity lens guide using plane-parallel resonator, adds the number of times that incident light passes through absorbed layer, so as to improve the absorptivity of absorbed layer indirectly, forms stable lens guide.The present invention has widened the scope of application of pyroelectric infrared detector.
Description
Technical field
The present invention relates to pyroelectric detector electronic technology field, and in particular to a kind of harmonic intensified rpyroelectric infrared is visited
Survey device.
Background technology
Pyroelectric infrared detector is made of the effect changed with temperature using the spontaneous polarization strength of pyroelectricity material
A kind of thermosensitive type infrared detector.At a constant temperature, the spontaneous polarization of pyroelectricity material is inhaled by internal electric charge and surface
Attached electric charge is neutralized.Pyroelectric infrared detector is widely used in the neck such as alarm, infrared imaging, non-contact temperature measuring, gas analysis
, there is application in domain in spectrometer, laser, infrared horizon.Pyroelectric infrared detector belongs to non-refrigerated infrared detector,
There is working and room temperature, it is compact conformation, reliable and stable.In 0.8~25 mu m waveband, pyroelectric infrared detector has flat
Spectral response.
Heat, which releases infrared electric explorer, includes optical system, infrared sensor unit, signal processing circuit, output control dress
Put；The performance of pyroelectric infrared detector is main to be characterized by response speed and sensitiveness, the optical system of pyroelectric infrared detector
The basic function of system is that Infrared Targets heat energy is converged into pyroelectric sensor surface, wants to obtain in certain wavelength band
Sensitiveness, it is desirable to the absorbed layer of detector is high to ultrared absorptivity, while being laid the foundation for the subsequent treatment of signal.
Therefore, the absorbed layer design of pyroelectric infrared detector receives increasing attention.
Pyroelectricity material is a kind of dielectric with spontaneous polarization, and its spontaneous polarization strength is varied with temperature；According to
Below equation：
Wherein, P is polarization intensity, and T is temperature, and dP changes for polarization intensity, and dT is temperature change；Can with formula (1) come
Pyroelectric coefficient p is described；If in the dt times, pyroelectricity material absorptive thermal radiation, temperature change dT, polarization intensity change dP, then
Shown in the electric current such as formula (2) that material unit area is produced.
The absorptivity of the infrared frequency range rpyroelectric infrared single-element detector absorbed layer of very long wave is one of its important performance characteristic,
The temperature rise speed and size of detector sensitive layer are directly affected, therefore, the suction of rpyroelectric infrared single-element detector how is improved
Yield, is the major issue in this area so as to improve the responsiveness and detectivity of rpyroelectric infrared single-element detector.
It is well known that optical resonator is one of basic composition of laser device, it is the brightness for strengthening exporting laser,
Regulation and the wavelength and the device in direction of selected laser, most laser systems from VUV to far infrared all use light
Learn resonator.The effect of wherein optical cavity is mainly optics positive feedback effect and produces the control action to vibrating light beam.Its
In, micro-cavity laser be it is a kind of by size the optical resonator and gain media of micron or sub-micrometer scale constitute it is miniature
Laser, wherein optical resonator are its cores.Micro-cavity laser has the characteristics of small volume energy consumption is low, and can be with
Large-scale integrated, and with many potential application values.
The content of the invention
In order to overcome the deficiencies in the prior art, the present invention provides a kind of absorptivity a kind of high harmonic intensified double absorption layer
Pyroelectric detector.
The technical scheme of the present invention is as follows：
A kind of absorbed layer in harmonic intensified pyroelectric infrared detector, its infrared sensor unit is composite bed knot
Structure, includes successively from bottom to the top：Bottom surface is brilliant provided with the lithium tantalate of metallic reflector and top surface provided with the first metal absorption layer
Piece, first medium layer, the second metal absorption layer, second dielectric layer and the 3rd metal level；The lithium tantalate wafer thickness be 9~
17 microns, the material of metal absorption layer is nichrome, and its thickness range is 6~11 nanometers, and the thickness range of dielectric layer is equal
For 3~6 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described metallic reflector is nickel-chrome alloy layer, gold
The thickness range for belonging to reflecting layer is 180~220 nanometers.
In the harmonic intensified pyroelectric infrared detector absorbent layer structure of the present invention, the first metal absorption layer, the second gold medal
Category absorbed layer, the 3rd metal absorption layer form resonator between lithium tantalate wafer, metallic reflector respectively.The present invention is used
Plane-parallel resonator causes light to vibrate and do not spill over outside waveguide back and forth in periodicity lens guide, adds incident light and passes through
The number of times of absorbed layer, so as to improve the absorption coefficient of absorbed layer indirectly, forms stable lens guide.The parallel plane
Chamber classification belongs to critical resonator, and the chamber to being operated in critical zone, only some specific light could not escaped out in intracavity round trip
Outside chamber, multiple resonance absorbing is carried out to the infrared light of specific band so as to realize.
Meanwhile, first medium layer, second dielectric layer can form small reflection cavity and repeatedly be absorbed respectively, accordingly, it is capable to
Detector is largely improved for the absorption of infrared incident light, absorptivity is improved.
In addition, the present invention make it that single absorber thickness is relatively thin using the structure design of double-deck absorbed layer, so as to improve
The responsiveness of device.
Brief description of the drawings
Fig. 1 is the structural representation of the harmonic intensified pyroelectric infrared detector absorbed layer of one embodiment of the invention；
Wherein, 1 is metallic reflector, and 2 be lithium tantalate wafer, and 3 be the first metal absorption layer, and 4 be first medium layer, and 5 be the second metal
Absorbed layer, 6 be second dielectric layer, and 7 be the 3rd metal level.
Embodiment
One embodiment of the present of invention structure is described in detail below in conjunction with accompanying drawing.
It is a kind of absorbed layer of harmonic intensified pyroelectric infrared detector as shown in Figure 1, the absorbed layer is composite bed
Structure, includes successively from bottom to the top：Bottom surface is provided with the tantalic acid of the first metal absorption layer 3 provided with metallic reflector 1 and top surface
Lithium chip 2, first medium layer 4, the second metal absorption layer 5, the metal level 7 of second dielectric layer 6 and the 3rd.
Embodiment：
A kind of harmonic intensified pyroelectric infrared detector includes optical system, infrared sensor unit, signal transacting electricity
Road, output-controlling device；Absorbed layer is lamination layer structure wherein in infrared sensor list, is included successively from bottom to the top：Bottom
Face is provided with the lithium tantalate wafer 2 of the first metal absorption layer 3, first medium layer 4, the second metal provided with metallic reflector 1 and top surface
Absorbed layer 5, the metal level 7 of second dielectric layer 6 and the 3rd.
A kind of harmonic intensified pyroelectric infrared detector, using lithium tantalate (LiTaO3) chip 2 is used as rpyroelectric infrared
The response element of detector, the lithium tantalate (LiTaO3) chip 2 is as pyroelectricity material, its pyroelectric coefficient p order of magnitude is
10-8C/K·cm2, what the thickness of the lithium tantalate wafer should be appropriate is thin, and in embodiment, the thickness of the lithium tantalate wafer is
10 microns, lithium tantalate (LiTaO3) chip 2 include bottom surface and top surface；Metallic reflector 1 can be nickel-chrome alloy layer, and its thickness is
200 nanometers, metallic reflector 1 is arranged on the bottom surface of lithium tantalate wafer 2；First metal absorption layer 3 can be nickel-chrome alloy layer,
Its thickness is 10 nanometers, and the first metal absorption layer 3 is arranged on the top surface of lithium tantalate wafer 2；First medium layer 4 can be nitridation
Silicon medium, its thickness is 5 nanometers, and first medium layer 4 is on the top surface of the first metal absorption layer 3；Second metal absorption layer 5 can
Think nickel-chrome alloy layer, its thickness is 10 nanometers, and the second metal absorption layer 5 is located on the top surface of first medium 4；Second medium
Layer 6 can be silicon nitride medium layer, and its thickness can be 5 nanometers, and second dielectric layer 6 is located at the top surface in the second metal absorption layer 5
On；3rd metal absorption layer 7 can be nickel-chrome alloy layer, and its thickness can be 12 nanometers, and the 3rd metal absorption layer 7 is situated between located at second
On the top surface of matter layer 6.
In embodiments of the invention, metallic reflector 1, lithium tantalate wafer 2, the first metal absorption layer 3, first medium layer 4,
Second metal absorption layer 5, second dielectric layer 6, the 3rd metal absorption layer 7 form lamination layer structure by controlling after thickness.This is answered
In sheet combination structure, the first metal absorption layer 3, the second metal absorption layer 5 and the 3rd metal absorption layer 7 on lithium tantalate wafer 2
Resonator is formd between metallic reflector 1 respectively, multiple resonance absorbing can be carried out to the infrared light of specific band；Simultaneously
First medium layer 4 can form small anti-with the first metal absorption layer 3 of its bottom surface and the second metal absorption layer 5 of its top surface
Chamber is penetrated, second dielectric layer 6 can be formed with the second metal absorption layer 5 of its bottom surface and the 3rd metal absorption layer 7 of its top surface
Small reflection cavity, so as to realize multiple absorption；Accordingly, it is capable to largely improve suction of the detector for infrared incident light
Receive, improve absorptivity.The harmonic intensified pyroelectric infrared detector of the present invention, the structure absorbing layer membrane system is to very after testing
Absorptivity >=80% of long wave infrared region.
Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations
Example.It will be understood by those skilled in the art that various modifications, equivalent substitution, change etc. can also be made to the present invention, these conversion
, all should be within protection scope of the present invention without departing from the spirit of the present invention.
Claims (2)
1. absorbed layer is lamination layer structure in a kind of harmonic intensified pyroelectric infrared detector, its infrared sensor unit, its
It is characterised by, includes successively from bottom to the top：Bottom surface is provided with the first metal absorption layer provided with metallic reflector (1) and top surface
(3) lithium tantalate wafer (2), first medium layer (4), the second metal absorption layer (5), second dielectric layer (6) and the 3rd metal
Layer (7)；Lithium tantalate wafer (2) thickness is 9~17 microns, and the material of metal absorption layer (3,5,7) is nichrome, and it is thick
It is 6~11 nanometers to spend scope, and the thickness range of dielectric layer (4,6) is 3~6 nanometers.
2. a kind of harmonic intensified pyroelectric infrared detector according to claim 1, it is characterised in that the metal is anti-
Layer (1) is penetrated for nickel-chrome alloy layer, the thickness range of metallic reflector (1) is 180~220 nanometers.
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| CN201610290352.4A CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
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| CN201610290352.4A CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
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| CN111883643B (en) * | 2020-07-23 | 2021-04-09 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
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| US6495828B1 (en) * | 2000-04-17 | 2002-12-17 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate |
| CN1165086C (en) * | 2001-07-11 | 2004-09-01 | 北京邮电大学 | Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method |
| CN101958362A (en) * | 2009-07-17 | 2011-01-26 | 北京邮电大学 | Fabrication method for semiconductor photodetector with nano waveguide structure |
| CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
| CN103259097B (en) * | 2013-04-19 | 2016-01-20 | 电子科技大学 | A kind of Terahertz metamaterial modular construction and preparation thereof and regulate and control method |
| CN103682076B (en) * | 2013-12-18 | 2016-03-30 | 电子科技大学 | A kind of very long wave rpyroelectric infrared single-element detector |
| CN105004430B (en) * | 2015-07-28 | 2019-12-06 | 昆明物理研究所 | Photoelectric sensitive unit of uncooled infrared focal plane detector |
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