CN105810773B - A kind of harmonic intensified pyroelectric infrared detector - Google Patents
A kind of harmonic intensified pyroelectric infrared detector Download PDFInfo
- Publication number
- CN105810773B CN105810773B CN201610290352.4A CN201610290352A CN105810773B CN 105810773 B CN105810773 B CN 105810773B CN 201610290352 A CN201610290352 A CN 201610290352A CN 105810773 B CN105810773 B CN 105810773B
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- CN
- China
- Prior art keywords
- layer
- infrared detector
- metal absorption
- pyroelectric infrared
- metal
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000010521 absorption reaction Methods 0.000 claims abstract description 36
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910001120 nichrome Inorganic materials 0.000 claims description 2
- 230000005574 cross-species transmission Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 230000005616 pyroelectricity Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 108091027981 Response element Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610290352.4A CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610290352.4A CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105810773A CN105810773A (en) | 2016-07-27 |
CN105810773B true CN105810773B (en) | 2017-08-25 |
Family
ID=56455251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610290352.4A Expired - Fee Related CN105810773B (en) | 2016-05-05 | 2016-05-05 | A kind of harmonic intensified pyroelectric infrared detector |
Country Status (1)
Country | Link |
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CN (1) | CN105810773B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111883643B (en) * | 2020-07-23 | 2021-04-09 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495828B1 (en) * | 2000-04-17 | 2002-12-17 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate |
CN1165086C (en) * | 2001-07-11 | 2004-09-01 | 北京邮电大学 | Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method |
CN101958362A (en) * | 2009-07-17 | 2011-01-26 | 北京邮电大学 | Fabrication method for semiconductor photodetector with nano waveguide structure |
CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
CN103259097B (en) * | 2013-04-19 | 2016-01-20 | 电子科技大学 | A kind of Terahertz metamaterial modular construction and preparation thereof and regulate and control method |
CN103682076B (en) * | 2013-12-18 | 2016-03-30 | 电子科技大学 | A kind of very long wave rpyroelectric infrared single-element detector |
CN105004430B (en) * | 2015-07-28 | 2019-12-06 | 昆明物理研究所 | Photoelectric sensitive unit of uncooled infrared focal plane detector |
-
2016
- 2016-05-05 CN CN201610290352.4A patent/CN105810773B/en not_active Expired - Fee Related
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CN105810773A (en) | 2016-07-27 |
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CB03 | Change of inventor or designer information |
Inventor after: Liang Zhiqing Inventor after: Wang Tao Inventor after: Ma Zhendong Inventor after: Wu Liuquan Inventor after: Liu Ziji Inventor before: Liu Ziji Inventor before: Liang Zhiqing Inventor before: Ma Zhendong Inventor before: Wu Liuquan Inventor before: Wang Tao |
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CB03 | Change of inventor or designer information | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170825 Termination date: 20180505 |
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CF01 | Termination of patent right due to non-payment of annual fee |