CN105810773B - A kind of harmonic intensified pyroelectric infrared detector - Google Patents

A kind of harmonic intensified pyroelectric infrared detector Download PDF

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Publication number
CN105810773B
CN105810773B CN201610290352.4A CN201610290352A CN105810773B CN 105810773 B CN105810773 B CN 105810773B CN 201610290352 A CN201610290352 A CN 201610290352A CN 105810773 B CN105810773 B CN 105810773B
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Prior art keywords
layer
infrared detector
metal absorption
pyroelectric infrared
metal
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CN105810773A (en
Inventor
梁志清
王涛
马振东
伍浏权
刘子骥
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

The invention discloses a kind of harmonic intensified pyroelectric infrared detector, belong to pyroelectric detector technical field.Absorbed layer in the infrared sensor unit of the present invention is lamination layer structure, is included successively from bottom to the top:Bottom surface is provided with the lithium tantalate wafer (2) of the first metal absorption layer (3) provided with metallic reflector (1) and top surface, first medium layer (4), second metal absorption layer (5), second dielectric layer (6) and the 3rd metal level (7);Lithium tantalate wafer (2) thickness is 9~17 microns.The present invention causes light to vibrate and do not spill over outside waveguide back and forth in periodicity lens guide using plane-parallel resonator, adds the number of times that incident light passes through absorbed layer, so as to improve the absorptivity of absorbed layer indirectly, forms stable lens guide.The present invention has widened the scope of application of pyroelectric infrared detector.

Description

A kind of harmonic intensified pyroelectric infrared detector
Technical field
The present invention relates to pyroelectric detector electronic technology field, and in particular to a kind of harmonic intensified rpyroelectric infrared is visited Survey device.
Background technology
Pyroelectric infrared detector is made of the effect changed with temperature using the spontaneous polarization strength of pyroelectricity material A kind of thermosensitive type infrared detector.At a constant temperature, the spontaneous polarization of pyroelectricity material is inhaled by internal electric charge and surface Attached electric charge is neutralized.Pyroelectric infrared detector is widely used in the neck such as alarm, infrared imaging, non-contact temperature measuring, gas analysis , there is application in domain in spectrometer, laser, infrared horizon.Pyroelectric infrared detector belongs to non-refrigerated infrared detector, There is working and room temperature, it is compact conformation, reliable and stable.In 0.8~25 mu m waveband, pyroelectric infrared detector has flat Spectral response.
Heat, which releases infrared electric explorer, includes optical system, infrared sensor unit, signal processing circuit, output control dress Put;The performance of pyroelectric infrared detector is main to be characterized by response speed and sensitiveness, the optical system of pyroelectric infrared detector The basic function of system is that Infrared Targets heat energy is converged into pyroelectric sensor surface, wants to obtain in certain wavelength band Sensitiveness, it is desirable to the absorbed layer of detector is high to ultrared absorptivity, while being laid the foundation for the subsequent treatment of signal. Therefore, the absorbed layer design of pyroelectric infrared detector receives increasing attention.
Pyroelectricity material is a kind of dielectric with spontaneous polarization, and its spontaneous polarization strength is varied with temperature;According to Below equation:
Wherein, P is polarization intensity, and T is temperature, and dP changes for polarization intensity, and dT is temperature change;Can with formula (1) come Pyroelectric coefficient p is described;If in the dt times, pyroelectricity material absorptive thermal radiation, temperature change dT, polarization intensity change dP, then Shown in the electric current such as formula (2) that material unit area is produced.
The absorptivity of the infrared frequency range rpyroelectric infrared single-element detector absorbed layer of very long wave is one of its important performance characteristic, The temperature rise speed and size of detector sensitive layer are directly affected, therefore, the suction of rpyroelectric infrared single-element detector how is improved Yield, is the major issue in this area so as to improve the responsiveness and detectivity of rpyroelectric infrared single-element detector.
It is well known that optical resonator is one of basic composition of laser device, it is the brightness for strengthening exporting laser, Regulation and the wavelength and the device in direction of selected laser, most laser systems from VUV to far infrared all use light Learn resonator.The effect of wherein optical cavity is mainly optics positive feedback effect and produces the control action to vibrating light beam.Its In, micro-cavity laser be it is a kind of by size the optical resonator and gain media of micron or sub-micrometer scale constitute it is miniature Laser, wherein optical resonator are its cores.Micro-cavity laser has the characteristics of small volume energy consumption is low, and can be with Large-scale integrated, and with many potential application values.
The content of the invention
In order to overcome the deficiencies in the prior art, the present invention provides a kind of absorptivity a kind of high harmonic intensified double absorption layer Pyroelectric detector.
The technical scheme of the present invention is as follows:
A kind of absorbed layer in harmonic intensified pyroelectric infrared detector, its infrared sensor unit is composite bed knot Structure, includes successively from bottom to the top:Bottom surface is brilliant provided with the lithium tantalate of metallic reflector and top surface provided with the first metal absorption layer Piece, first medium layer, the second metal absorption layer, second dielectric layer and the 3rd metal level;The lithium tantalate wafer thickness be 9~ 17 microns, the material of metal absorption layer is nichrome, and its thickness range is 6~11 nanometers, and the thickness range of dielectric layer is equal For 3~6 nanometers.
In the harmonic intensified pyroelectric infrared detector of the present invention, its described metallic reflector is nickel-chrome alloy layer, gold The thickness range for belonging to reflecting layer is 180~220 nanometers.
In the harmonic intensified pyroelectric infrared detector absorbent layer structure of the present invention, the first metal absorption layer, the second gold medal Category absorbed layer, the 3rd metal absorption layer form resonator between lithium tantalate wafer, metallic reflector respectively.The present invention is used Plane-parallel resonator causes light to vibrate and do not spill over outside waveguide back and forth in periodicity lens guide, adds incident light and passes through The number of times of absorbed layer, so as to improve the absorption coefficient of absorbed layer indirectly, forms stable lens guide.The parallel plane Chamber classification belongs to critical resonator, and the chamber to being operated in critical zone, only some specific light could not escaped out in intracavity round trip Outside chamber, multiple resonance absorbing is carried out to the infrared light of specific band so as to realize.
Meanwhile, first medium layer, second dielectric layer can form small reflection cavity and repeatedly be absorbed respectively, accordingly, it is capable to Detector is largely improved for the absorption of infrared incident light, absorptivity is improved.
In addition, the present invention make it that single absorber thickness is relatively thin using the structure design of double-deck absorbed layer, so as to improve The responsiveness of device.
Brief description of the drawings
Fig. 1 is the structural representation of the harmonic intensified pyroelectric infrared detector absorbed layer of one embodiment of the invention; Wherein, 1 is metallic reflector, and 2 be lithium tantalate wafer, and 3 be the first metal absorption layer, and 4 be first medium layer, and 5 be the second metal Absorbed layer, 6 be second dielectric layer, and 7 be the 3rd metal level.
Embodiment
One embodiment of the present of invention structure is described in detail below in conjunction with accompanying drawing.
It is a kind of absorbed layer of harmonic intensified pyroelectric infrared detector as shown in Figure 1, the absorbed layer is composite bed Structure, includes successively from bottom to the top:Bottom surface is provided with the tantalic acid of the first metal absorption layer 3 provided with metallic reflector 1 and top surface Lithium chip 2, first medium layer 4, the second metal absorption layer 5, the metal level 7 of second dielectric layer 6 and the 3rd.
Embodiment:
A kind of harmonic intensified pyroelectric infrared detector includes optical system, infrared sensor unit, signal transacting electricity Road, output-controlling device;Absorbed layer is lamination layer structure wherein in infrared sensor list, is included successively from bottom to the top:Bottom Face is provided with the lithium tantalate wafer 2 of the first metal absorption layer 3, first medium layer 4, the second metal provided with metallic reflector 1 and top surface Absorbed layer 5, the metal level 7 of second dielectric layer 6 and the 3rd.
A kind of harmonic intensified pyroelectric infrared detector, using lithium tantalate (LiTaO3) chip 2 is used as rpyroelectric infrared The response element of detector, the lithium tantalate (LiTaO3) chip 2 is as pyroelectricity material, its pyroelectric coefficient p order of magnitude is 10-8C/K·cm2, what the thickness of the lithium tantalate wafer should be appropriate is thin, and in embodiment, the thickness of the lithium tantalate wafer is 10 microns, lithium tantalate (LiTaO3) chip 2 include bottom surface and top surface;Metallic reflector 1 can be nickel-chrome alloy layer, and its thickness is 200 nanometers, metallic reflector 1 is arranged on the bottom surface of lithium tantalate wafer 2;First metal absorption layer 3 can be nickel-chrome alloy layer, Its thickness is 10 nanometers, and the first metal absorption layer 3 is arranged on the top surface of lithium tantalate wafer 2;First medium layer 4 can be nitridation Silicon medium, its thickness is 5 nanometers, and first medium layer 4 is on the top surface of the first metal absorption layer 3;Second metal absorption layer 5 can Think nickel-chrome alloy layer, its thickness is 10 nanometers, and the second metal absorption layer 5 is located on the top surface of first medium 4;Second medium Layer 6 can be silicon nitride medium layer, and its thickness can be 5 nanometers, and second dielectric layer 6 is located at the top surface in the second metal absorption layer 5 On;3rd metal absorption layer 7 can be nickel-chrome alloy layer, and its thickness can be 12 nanometers, and the 3rd metal absorption layer 7 is situated between located at second On the top surface of matter layer 6.
In embodiments of the invention, metallic reflector 1, lithium tantalate wafer 2, the first metal absorption layer 3, first medium layer 4, Second metal absorption layer 5, second dielectric layer 6, the 3rd metal absorption layer 7 form lamination layer structure by controlling after thickness.This is answered In sheet combination structure, the first metal absorption layer 3, the second metal absorption layer 5 and the 3rd metal absorption layer 7 on lithium tantalate wafer 2 Resonator is formd between metallic reflector 1 respectively, multiple resonance absorbing can be carried out to the infrared light of specific band;Simultaneously First medium layer 4 can form small anti-with the first metal absorption layer 3 of its bottom surface and the second metal absorption layer 5 of its top surface Chamber is penetrated, second dielectric layer 6 can be formed with the second metal absorption layer 5 of its bottom surface and the 3rd metal absorption layer 7 of its top surface Small reflection cavity, so as to realize multiple absorption;Accordingly, it is capable to largely improve suction of the detector for infrared incident light Receive, improve absorptivity.The harmonic intensified pyroelectric infrared detector of the present invention, the structure absorbing layer membrane system is to very after testing Absorptivity >=80% of long wave infrared region.
Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations Example.It will be understood by those skilled in the art that various modifications, equivalent substitution, change etc. can also be made to the present invention, these conversion , all should be within protection scope of the present invention without departing from the spirit of the present invention.

Claims (2)

1. absorbed layer is lamination layer structure in a kind of harmonic intensified pyroelectric infrared detector, its infrared sensor unit, its It is characterised by, includes successively from bottom to the top:Bottom surface is provided with the first metal absorption layer provided with metallic reflector (1) and top surface (3) lithium tantalate wafer (2), first medium layer (4), the second metal absorption layer (5), second dielectric layer (6) and the 3rd metal Layer (7);Lithium tantalate wafer (2) thickness is 9~17 microns, and the material of metal absorption layer (3,5,7) is nichrome, and it is thick It is 6~11 nanometers to spend scope, and the thickness range of dielectric layer (4,6) is 3~6 nanometers.
2. a kind of harmonic intensified pyroelectric infrared detector according to claim 1, it is characterised in that the metal is anti- Layer (1) is penetrated for nickel-chrome alloy layer, the thickness range of metallic reflector (1) is 180~220 nanometers.
CN201610290352.4A 2016-05-05 2016-05-05 A kind of harmonic intensified pyroelectric infrared detector Expired - Fee Related CN105810773B (en)

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US6495828B1 (en) * 2000-04-17 2002-12-17 The United States Of America As Represented By The Secretary Of The Army Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate
CN1165086C (en) * 2001-07-11 2004-09-01 北京邮电大学 Photoelectric semiconductor detector with flat-top and sharp-edge responses and its implementation method
CN101958362A (en) * 2009-07-17 2011-01-26 北京邮电大学 Fabrication method for semiconductor photodetector with nano waveguide structure
CN102848637A (en) * 2012-08-29 2013-01-02 中国科学院长春光学精密机械与物理研究所 Composite multilayer film infrared absorption layer
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CN103682076B (en) * 2013-12-18 2016-03-30 电子科技大学 A kind of very long wave rpyroelectric infrared single-element detector
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