CN105789428B - A kind of composite absorption layer pyroelectric infrared detector - Google Patents
A kind of composite absorption layer pyroelectric infrared detector Download PDFInfo
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- CN105789428B CN105789428B CN201610290099.2A CN201610290099A CN105789428B CN 105789428 B CN105789428 B CN 105789428B CN 201610290099 A CN201610290099 A CN 201610290099A CN 105789428 B CN105789428 B CN 105789428B
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- layer
- infrared detector
- pyroelectric infrared
- lithium tantalate
- composite absorption
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 24
- 239000002131 composite material Substances 0.000 title claims abstract description 20
- 239000010936 titanium Substances 0.000 claims abstract description 20
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000005616 pyroelectricity Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Selection of materials
Abstract
The invention discloses a kind of composite absorption layer pyroelectric infrared detectors, belong to pyroelectric detector technical field.Absorbed layer successively includes: titanium coating (1), dielectric layer (2), nickel-chrome alloy layer (3), lithium tantalate layer (4) and reflecting layer (5) from top to bottom in pyroelectric infrared detector of the present invention；The nickel-chrome alloy layer (3) is deposited on the top surface of lithium tantalate layer (4), the reflecting layer (5) is deposited on the bottom surface of lithium tantalate layer (4), and the titanium coating (1) is deposited on the top surface of dielectric layer (2).The composite absorption layer for the pyroelectric infrared detector that the present invention prepares is compared with single Metal absorption layer film makees thermally sensitive layer, the present invention has better surface soundness, high absorption coefficient and lesser heat loss, high-performance thermal response can be obtained, conducive to high-precision pyroelectric infrared detector is prepared.
Description
Technical field
The present invention relates to pyroelectric detector electronic technology fields, and in particular to a kind of composite absorption layer rpyroelectric infrared spy
Survey device.
Background technique
Pyroelectric detector is made of a kind of effect that the spontaneous polarization strength using pyroelectricity material changes with temperature
A kind of thermosensitive type infrared detector.At a constant temperature, the spontaneous polarization of pyroelectricity material is inhaled by intracorporal charge and surface
Attached charge is neutralized.If pyroelectricity material is made into surface perpendicular to the parallel thin slice of polarization direction, when infra-red radiation incidence
When to sheet surface, due to absorbing radiation temperature change occurs for thin slice, the distance between dipole and chain angle in pyroelectricity material
It changes, polarization intensity is made to change.And neutralize charge since the resistivity height of material does not catch up with this variation, result
Be thin slice two surfaces between there is transient voltage.If there is external resistance to be connected across between two surfaces, charge is just released by external circuit
It releases.The size of electric current is also directly proportional to the rate of temperature change of thin slice in addition to directly proportional to pyroelectric coefficient, can be used to measure
The power of incident radiation.
Pyroelectric detector includes optical system, infrared sensor unit, signal processing circuit, output-controlling device；Heat
The performance for releasing electric infrared detector is mainly characterized by response speed and sensibility, the basic training of the optical system of pyroelectric detector
It can be that Infrared Targets thermal energy is converged into pyroelectric sensor surface, the sensibility obtained in certain wavelength band,
It requires that the absorbed layer of detector is high to the absorptivity of infrared ray, while laying the foundation for the subsequent processing of signal.Therefore, heat is released
The absorbed layer design of electric infrared detector receives more and more attention.
In infrared detector technical field, reducing reflectivity can be such that more infrared lights enter inside detector, significantly
The utilization efficiency for improving infrared light makes detector have higher sensitivity；Increase absorptivity, generallys use the side of plated film
Method, by selecting material appropriate, accurately controlling the parameters such as film thickness, the quality for improving film layer reduces reflectivity.But in reality
In the preparation of the absorbed layer of pyroelectric infrared detector there is also complex manufacturing technology, preparation cost is high the problems such as.Therefore,
It is high to prepare absorption efficiency, the simple and cheap absorbed layer of production method has very high realistic meaning.
Summary of the invention
For overcome the deficiencies in the prior art, the present invention provides a kind of composite absorption layer pyroelectric infrared detector.
Technical solution of the invention is as follows:
A kind of composite absorption layer pyroelectric infrared detector, the absorbed layer in infrared sensor unit are composite layer knot
Structure successively includes: titanium coating, dielectric layer, nickel-chrome alloy layer, lithium tantalate layer and reflecting layer from top to bottom；It is described
Nickel-chrome alloy layer is deposited on the top surface of lithium tantalate layer, and the reflective layer deposition is in the bottom surface of lithium tantalate layer, the titanium
Deposition of metal is in the top surface of dielectric layer.
Composite absorption layer pyroelectric infrared detector of the present invention, the material of the dielectric layer are silicon nitride.
Composite absorption layer pyroelectric infrared detector of the present invention, the reflecting layer are to have high reflectance in infrared band
Thin metal layer,
Composite absorption layer pyroelectric infrared detector of the present invention, the titanium coating, dielectric layer and reflecting layer constitute humorous
Shake chamber.
In the present invention, the preparation of each structure sheaf can use any suitable deposition technique, and the present invention passes through radio frequency magnetron
The advantages such as sputtering method is deposited, and prepared structure sheaf has thickness controllable, and film plating layer is fine and close, uniform, and use scope is extensive.
In the present invention, the reflector material is preferably nichrome.
In the present invention, the thickness of the titanium coating can be any suitable thickness.Preferably, the thickness of titanium coating
It is 10 nanometers, the titanium coating best performance of the pyroelectric infrared detector of this titanium coating thickness compared to other thickness.
In the present invention, the thickness of the dielectric layer can be any suitable thickness.Preferably, dielectric layer with a thickness of 30
Nanometer, the dielectric layer best performance of the pyroelectric infrared detector of this thickness of dielectric layers compared to other thickness.
The present invention using plane-parallel resonator light is vibrated back and forth in periodical lens guide and do not spill over waveguide it
Outside, the number that incident light passes through absorbed layer is increased, to improve the absorption coefficient of absorbed layer indirectly, is formd stable saturating
Mirror wave is led.The plane-parallel resonator classification belongs to critical resonator, the chamber to work in critical zone, only certain specific light ability
It is not escaped out outside chamber in intracavity round trip, multiple resonance absorbing is carried out to the infrared light of specific band to realize, to obviously mention
High-absorbility.
The present invention compared with the prior art, has the advantages that the plated film present invention employs rf magnetron sputtering
Method, preparation process is simple, strong operability；Composite absorption layer and single metal absorption layer are thin in pyroelectric detector of the present invention
Film is compared as thermally sensitive layer, is had better surface soundness, high absorption coefficient and lesser heat loss, can be obtained high property
Energy thermal response is conducive to make to meet high-precision infrared detector to the high standards of its sensing element thermal response property
The standby high-precision infrared detector based on pyroelectric crystal out.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of composite absorption layer pyroelectric infrared detector of the present invention；Wherein, 1 is titanium coating, 2
It is nickel-chrome alloy layer for dielectric layer, 3,4 be lithium tantalate layer, and 5 be reflecting layer.
Specific embodiment
Below in conjunction with attached drawing one embodiment structure that the present invention will be described in detail.
As shown in Figure 1, a kind of composite absorption layer pyroelectric infrared detector, the absorbed layer in infrared sensor unit is
Lamination layer structure successively includes: titanium coating 1, dielectric layer 2, nickel-chrome alloy layer 3,4 and of lithium tantalate layer from top to bottom
Reflecting layer 5；The nickel-chrome alloy layer 3 is by r. f. magnetron sputtering in the top surface of lithium tantalate layer 4, the reflecting layer 5
By r. f. magnetron sputtering in the bottom surface of lithium tantalate layer 4, the titanium coating 1 is existed by r. f. magnetron sputtering
The top surface of dielectric layer 2.
In one embodiment of the invention, the material of the dielectric layer is silicon nitride.
In one embodiment of the invention, the material in the reflecting layer is nichrome.
In one embodiment of the invention, the titanium coating, dielectric layer and reflecting layer constitute plane-parallel resonator；It is described parallel
The light parallel with axis unlimited back and forth can not repeatedly escape out outside chamber in planar cavity, and once voluntarily be closed back and forth, this
The similar stable cavity of point.But all light along non axial propagation will necessarily then escape outside chamber after limited times is round-trip, and this point is again
Similar unsteady cavity.Therefore plane-parallel resonator is a kind of metastable resonators between stable cavity and unsteady cavity.
Embodiment:
A kind of composite absorption layer pyroelectric infrared detector, the absorbed layer in infrared sensor unit are composite layer knot
Structure successively includes: titanium coating 1, dielectric layer 2, nickel-chrome alloy layer 3, lithium tantalate layer 4 and reflecting layer 5 from top to bottom；
Pyroelectric infrared detector sensing element is prepared in the present invention first, the present embodiment selects lithium tantalate, by tantalum
The processing such as sour crystalline lithium material ground, polished, chemical attack and/or cleaning, obtain lithium tantalate substrate；
The material in the reflecting layer 5 can be nichrome, by r. f. magnetron sputtering in lithium tantalate layer 4
Bottom surface；The nickel-chrome alloy layer 3 is by r. f. magnetron sputtering in the top surface of lithium tantalate layer 4；The material of the dielectric layer 2
Material can be silicon nitride, and preferred thickness is 30 nanometers, and the dielectric layer 2 is set to 3 top surface of nickel-chrome alloy layer；The titanium coating
Thickness is preferably 10 nanometers, by r. f. magnetron sputtering in the top surface of dielectric layer 2.
In the embodiment of the present invention, titanium coating 1, dielectric layer 2, nickel-chrome alloy layer 3, lithium tantalate layer 4 and reflecting layer 5
Lamination layer structure is formed after controlling thickness by magnetron sputtering technique.In the lamination layer structure, reflecting layer 5, dielectric layer 2 and titanium
Belong to layer 1 and constitute resonant cavity, multiple resonance absorbing can be carried out to the infrared light of specific band.
Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations
Example.It will be understood by those skilled in the art that various modifications, equivalent replacement, variation etc. can also be done to the present invention, these transformation
It, all should be within protection scope of the present invention without departing from spirit of the invention.
Claims (4)
1. a kind of composite absorption layer pyroelectric infrared detector, which is characterized in that absorbed layer is multiple in its infrared sensor unit
Sheet combination structure successively includes: titanium coating (1), dielectric layer (2), nickel-chrome alloy layer (3), lithium tantalate from top to bottom
Layer (4) and reflecting layer (5)；The nickel-chrome alloy layer (3) is deposited on the top surface of lithium tantalate layer (4), and the reflecting layer (5) is heavy
For product in the bottom surface of lithium tantalate layer (4), the titanium coating (1) is deposited on the top surface of dielectric layer (2).
2. a kind of composite absorption layer pyroelectric infrared detector according to claim 1, which is characterized in that the dielectric layer
(2) material is silicon nitride.
3. a kind of composite absorption layer pyroelectric infrared detector according to claim 1, which is characterized in that the reflecting layer
(3) in infrared band metal layer with high reflectivity.
4. a kind of composite absorption layer pyroelectric infrared detector according to claim 1, which is characterized in that titanium coating
(1), dielectric layer (2) and reflecting layer (5) constitute resonant cavity.
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| CN201610290099.2A CN105789428B (en) | 2016-05-05 | 2016-05-05 | A kind of composite absorption layer pyroelectric infrared detector |
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| CN201610290099.2A CN105789428B (en) | 2016-05-05 | 2016-05-05 | A kind of composite absorption layer pyroelectric infrared detector |
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| CN105789428B true CN105789428B (en) | 2019-06-18 |
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| CN106197688A (en) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | A kind of pyroelectric infrared detector |
| CN113188669B (en) * | 2021-04-29 | 2023-06-27 | 上海翼捷工业安全设备股份有限公司 | Infrared absorption composite film structure and carbon dioxide pyroelectric infrared detector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6699521B1 (en) * | 2000-04-17 | 2004-03-02 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating a ferroelectric/pyroelectric infrared detector using a crystallographically oriented electrode and a rock salt structure material substrate |
| CN103682076A (en) * | 2013-12-18 | 2014-03-26 | 电子科技大学 | Very-long-wave pyroelectric infrared unit detector |
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| CN104280135B (en) * | 2013-07-05 | 2017-03-22 | 苏州宏见智能传感科技有限公司 | Flexible uncooled infrared detector and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6699521B1 (en) * | 2000-04-17 | 2004-03-02 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating a ferroelectric/pyroelectric infrared detector using a crystallographically oriented electrode and a rock salt structure material substrate |
| CN103682076A (en) * | 2013-12-18 | 2014-03-26 | 电子科技大学 | Very-long-wave pyroelectric infrared unit detector |
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Inventor after: Liang Zhiqing Inventor after: Liu Ziji Inventor after: Wu Liuquan Inventor after: Ma Zhendong Inventor after: Wang Tao Inventor before: Liu Ziji Inventor before: Liang Zhiqing Inventor before: Wu Liuquan Inventor before: Ma Zhendong Inventor before: Wang Tao |
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