CN105789157B - 具有低栅极驱动电感柔性板连接的功率半导体模块 - Google Patents

具有低栅极驱动电感柔性板连接的功率半导体模块 Download PDF

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CN105789157B
CN105789157B CN201510883694.2A CN201510883694A CN105789157B CN 105789157 B CN105789157 B CN 105789157B CN 201510883694 A CN201510883694 A CN 201510883694A CN 105789157 B CN105789157 B CN 105789157B
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metal layer
terminal
attached
power semiconductor
interconnection
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CN105789157A (zh
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R·拜雷尔
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本申请涉及具有低栅极驱动电感柔性板连接的功率半导体模块。一种功率半导体模块包括金属化层和附接至金属化层的功率半导体裸片。裸片具有在裸片的远离金属化层的一侧处设置的第一端子和第二端子。功率半导体模块还包括附接至第一端子的第一互连件、附接至第二端子的第二互连件以及包括第一金属层、第二金属化层和绝缘体的柔性板，该绝缘体位于第一金属层和第二金属层之间使得第一金属层和第二金属层相互电绝缘。第一金属层附接至第一互连件，第二金属层附接至第二互连件，使得柔性板通过第一互连件和第二互连件与功率半导体裸片隔开。

Description

具有低栅极驱动电感柔性板连接的功率半导体模块
技术领域
本申请涉及功率半导体模块，具体地，涉及具有低栅极驱动电感的功率半导体模块。
背景技术
在诸如反相器、转换器等的功率电子电路中，诸如MOSFET(金属氧化物场效应晶体管)、IGBT(绝缘栅型双极晶体管)和JFET(结型场效应晶体管)的功率半导体开关被通过控制电极(诸如用于MOSFET的栅极电极、用于IGBT的栅极电极、用于双极晶体管的基极电流电极等)进行控制。在控制器中生成用于控制功率半导体开关的导通、截止、阻断和传导状态的命令，并且通过用于每个功率开关的栅极驱动器将命令传输至控制端子。栅极驱动器使命令信号与控制器输入电压偏移(例如，经由变压器、光耦合器、电平移位器等)，并且将驱动信号成形用于预期的切换变换(倾斜、上升和下降时间、延迟时间等)。
上述功率半导体器件还可以用于管理故障条件(例如，通过检测负载的短路)。负载短路可发生在两个相位之间、所有三个相位之间或者一个或多个相位与地之间。在这种短路条件下，使用功率半导体的输出特性。例如，漏极(集电极)电流(即，功率半导体器件的电源端子之间的电流)以额定电流的大约4倍至10倍饱和，而饱和电平由器件的传输特性和栅极电压的量来确定。功率半导体在高压下可以承受这些高电流条件仅几μs。驱动器或控制器快速感应这种条件并断开功率半导体器件。会发生不同类型的短路条件。在每种情况下，功率电路的特性di/dt和dV/dt响应引起栅极过压条件，这由器件的栅极输入处所见的杂散电感引起。该杂散电感(在本文统称为栅极电路电感)包括与栅极驱动器的板上布线(板布局)、从栅极驱动器到功率模块的控制端子的布线以及功率模块内到达功率晶体管栅极的端子、接线和导体路径相关联的电感。栅极过压的高度部分地取决于栅极电路电感。换句话说，栅极处的电荷可流入驱动器的电压源的速度不仅受到栅极电路的电阻限制而且还受到电感限制。栅极电路电感限制栅极电流可改变的速度。因此，对于典型的栅极电路，栅极过电压可以超过20V，其通常是最大额定电压。
此外，在用于并联在一起的更高功率芯片的模块中，公共栅极要求更强大的栅极驱动器。在栅极驱动器内，这通常通过使用具有更大额定电流和更低栅极电阻的晶体管来实现。栅极驱动器的板上布线(板布局)、从栅极驱动器到功率模块的控制端子的布线以及功率模块内到达并联器件的栅极的端子、接线和导体路径保持与单个晶体管中的情况相同。这产生了大约与单个晶体管的情况相同的栅极电路电感。离开公共栅极的电流根据并联器件的数量按比例缩放。栅极电流的di/dt也相应地按比例缩放，这在栅极处引起更高的过压。栅极电路电感是驱动电路中的几何形状与至功率晶体管模块的连接的函数。较低的栅极电路电感提高了短路响应，这帮助快速地将栅极电压限制于通过驱动器设定的值，从而在负载处限制短路电流且随后可控地断开短路(栅极电路中大电感的主要问题是增加短路条件期间的栅极电压)。较低的栅极电路电感还改进了功率晶体管器件的导通和截止响应，提供更快速的器件响应时间。栅极电路电感传统上被忽视有利于电阻阻抗。栅极电路电感已经通过将栅极驱动器板直接组装到功率模块端子上而在它们之间没有布线来解决。栅极驱动器板上以及功率模块或封装内的电感通常没有被解决。
发明内容
根据功率半导体模块的一个实施例，该模块包括金属化层和附接至金属化层的功率半导体裸片。功率半导体裸片具有在裸片的远离金属化层的一侧处设置的第一端子和第二端子。功率半导体模块还包括附接至第一端子的第一互连件、附接至第二端子的第二互连件以及柔性板，柔性板包括第一金属层、第二金属化层以及位于第一金属层和第二金属层之间以使第一金属层和第二金属层相互电绝缘的绝缘体。第一金属层附接至第一互连件，第二金属层附接至第二互连件，使得柔性板通过第一互连件和第二互连件与功率半导体裸片隔开。
根据功率半导体模块的另一实施例，该模块包括：图案化金属化层，具有相互隔开的多个部分；以及多个功率半导体裸片，至少附接至金属化层中的第一部分，并且每一个功率半导体裸片都具有在裸片的远离图案化金属化层的一侧处设置的第一端子和第二端子。功率半导体模块还包括：第一互连件，附接至功率半导体裸片的第一端子；第二互连件，附接至功率半导体裸片的第二端子；以及柔性板，包括第一金属层、第二金属层以及位于第一金属层与第二金属层之间以使第一金属层和第二金属层相互电绝缘的绝缘体。第一金属层附接至第一互连件且第二金属层附接至第二互连件，使得柔性板通过第一互连件和第二互连件与功率半导体裸片隔开。
根据一种制造功率半导体模块的方法的实施例，该方法包括：将功率半导体裸片附接至金属化层，功率半导体裸片具有在裸片的远离金属化层的一侧处设置的第一端子和第二端子；将第一互连件附接至第一端子且将第二互连件附接至第二端子；提供柔性板，柔性板包括第一金属层、第二金属层以及位于第一金属层和第二金属层之间以使第一金属层和第二金属层相互电绝缘的绝缘体；以及将第一金属层附接至第一互连件且将第二金属层附接至第二互连件，使得柔性板通过第一互连件和第二互连件与功率半导体裸片隔开。
根据以下详细描述以及查看附图，本领域技术人员将意识到其他特征和优势。
附图说明
附图中的元件不是必须相互按比例绘制。类似的参考标号表示对应的类似部件。各个所示实施例的特征可以进行组合，除非它们相互排斥。在附图中示出且在以下说明书中详细描述实施例。
图1示出了具有低栅极驱动电感柔性板连接的功率半导体模块的实施例的侧视图。
图2至图6示出了根据不同实施例的用于功率半导体模块的低栅极驱动电感柔性板连接的截面图。
图7和图8示出了制造功率半导体模块的方法的实施例，其中该功率半导体模块具有为容纳在功率半导体模块内的半导体裸片提供外部驱动器连接的柔性板。
图9示出了具有柔性板的功率半导体模块的另一实施例的立体图，其中该柔性板为容纳在功率半导体模块内的半导体裸片提供外部驱动器连接。
图10和图11示出了制造功率半导体模块的方法的另一实施例，其中该功率半导体模块具有为容纳在功率半导体模块内的半导体裸片提供外部驱动器连接的柔性板。
图12示出了根据又一实施例的用于功率半导体模块的低栅极驱动电感柔性板连接的截面图。
具体实施方式
根据本文描述的实施例，功率半导体模块包括一个或多个功率半导体裸片(芯片)，其组装在诸如DCB(直接铜键合)、AMB(活性金属钎焊)或DAB(直接铝键合)衬底、印刷电路板(PCB)或引线框之类的功率板上。每个功率半导体裸片的上侧互连件(例如，发射极、阳极、阴极、源极、栅极)为键合铝或铜线、铝或铜带或金属夹的形式。诸如烧结、扩散焊接、钎焊、超声键合、激光焊接或电子束焊接(EBW)之类的接合方法可用于将互连件附接(接合)至裸片的上侧端子。
在两侧上包括绝缘体和金属化层的柔性板形成用于外部栅极驱动电路(其控制包括在功率半导体模块中的裸片的切换)的平行板波导(有时也称为带线)。柔性板连接至互连件，该互连件被接合至功率半导体裸片的上侧端子。柔性板的一个金属化层连接至控制端子，以及柔性板的至少第二金属化层连接至用于功率半导体的驱动信号的发射极/源极参考端子。柔性板可以从模块突出并与外部栅极驱动电路接触以实现从栅极驱动电路到模块内的功率半导体裸片的平行板波导设计。驱动电路/电子器件还可以集成在柔性板上，使得柔性板用作用于上侧互连件的总线、驱动电路的载体以及控制器或任何外部通信装置的接口。
通常，柔性板提供控制电路(例如，功率半导体模块中的栅极和发射极/源极)的布线。柔性板连接至模块互连件，模块互连件在接合至柔性板之前被键合至功率半导体裸片的上侧端子。如此，柔性板被定位于功率半导体裸片上方的提升层级处，并且可以在模块中被置于与附接至功率半导体裸片的上侧端子的互连件(例如，接线、带或夹)相同的高度。以这种方式，柔性板通过附接至上侧裸片端子的互连件与每个功率半导体裸片隔开。
图1示出了功率半导体模块的实施例。功率半导体模块包括壳体100(诸如塑料或金属壳体)，其中功率端子102从壳体100中突出。功率端子102为包括在壳体100中的每个功率半导体裸片(图1中未示出)提供外部功率连接。每个功率半导体裸片均附接至诸如DCB、AMB或DAB衬底、PCB或引线框之类的功率板(图1中也未示出)。功率半导体模块还包括柔性板104，柔性板104从壳体100中突出。
柔性板104包括第一(上)金属层106、第二(下)金属层108以及绝缘体110，绝缘体110位于第一金属层106和第二金属层108之间使得第一金属层106和第二金属层108相互电绝缘。绝缘体110例如可以是聚酰亚胺，并且粘合剂可以涂覆于金属层106、108。金属层106、108例如可以包括铜或铝。绝缘体110的厚度可以在25μm至100μm的范围内，以易于弯曲。金属层106、108的厚度可以在17μm至100μm的范围内，以易于弯曲。第一金属层106和第二金属层108可以具有相同或不同的厚度。柔性板104可以是多层柔性板，用于除控制信号(即，栅极电路)之外还接收传感器信号、辅助发射极或其他信号等。柔性板104可以具有切口(cutout)和/或被成形为用作功率半导体模块内的应力释放机制。
柔性板104形成从外部驱动电路到模块内的功率半导体裸片的平行板波导。如图1所示，形成外部驱动电路的无源部件112和/或半导体裸片中的一个或多个可以附接至柔性板104的从壳体100突出的部分。在这种情况下，柔性板104用作总线、驱动电路的载体以及控制器或任何外部通信装置的接口。可选地或另外地，无源部件112和/或驱动电路裸片中的一个或多个可以设置在另一壳体中或者附接至与柔性板104和功率半导体模块100分开的另一板。在每一种情况下，柔性板104都在外部驱动电路和功率半导体模块之间提供电连接路径并且向包括在功率半导体模块中的功率半导体裸片呈现低栅极电感。在图1中切掉部分壳体100以示出在壳体100中延伸的柔性板104。
壳体内的每个功率半导体裸片的上侧端子附接至壳体100内的互连件(图1中未示出)，诸如键合线、键合带或金属夹。柔性板104的上金属层106附接至互连件中的第一互连件，以及柔性板104的下金属层108附接至互连件中的第二互连件。以这种方式，柔性板104通过附接至裸片的顶侧端子的互连件与包括在壳体100中的每个功率半导体裸片隔开。以这种方式，功率半导体模块可以使用任何标准的裸片互连工艺来组装，使得在柔性板104附接至互连件之前，诸如键合线、键合带或金属夹之类的互连件被附接至壳体100内的每个功率半导体裸片的顶侧端子。柔性板104的金属层106、108可以使用任何标准的接合技术(诸如超声键合、烧结、扩散焊接、钎焊、激光焊接、EBW等)附接至对应的互连件。
图2示出了去除壳体100的功率半导体模块的部分截面图。为了易于说明，在图2中示出了单个功率半导体裸片114。功率半导体模块可以根据模块的类型包括一个或多个功率半导体裸片114。此外，也为了抑郁说明，在图2中仅示出了裸片114附接至的功率板的最上面的金属化层116。
在一个实施例中，功率板的最上面的金属化层116被图案化为相互分开的多个部分116a、116b、116c。功率半导体裸片114的底侧115经由裸片附接材料118(诸如焊料、扩散焊接、烧结、粘合剂等)附接至金属化层116的第一部分116a。在电流流动方向在裸片114的底侧115和顶侧117之间的垂直器件的情况下，裸片114的底侧115可以是诸如功率MOSFET的漏极、IGBT的集电极和/或功率二极管的阳极/阴极之类的功率端子。功率端子例如通过扩散焊接附接至功率板的最上面的金属化层116的第一部分116a。在电流流动方向为水平的横向器件的情况下，裸片114的底侧115不是活性的。这种器件的对应漏极或集电极端子在顶侧上同样具有互连件。然后，柔性板104将仍然连接功率半导体114的顶部上的源极和栅极端子或等效控制端子。
在任一种器件类型的情况下，功率半导体裸片114也具有一个或多个顶侧端子120、122，它们远离功率板的最上面的金属化层116。例如在功率MOSFET的情况下，裸片114可以具有位于裸片114的远离金属化层116的一侧117处的控制或栅极端子120和源极端子122。在IGBT的情况下，裸片114可具有位于裸片114的远离金属化层116的一侧117处的控制或栅极端子120和发射极端子122。在功率二极管的情况下，裸片114可具有位于裸片114的远离金属化层116的一侧117处的阴极或阳极端子122。图2示出了诸如功率MOSFET或IGBT的功率晶体管(具有顶侧的控制/栅极和源极/发射极端子120、122)，但是也可以通过消除栅极端子120来作为功率二极管。
诸如键合线、键合带或金属夹之类的第一互连件124附接至功率半导体裸片114的控制或栅极端子120。诸如键合线、键合带或金属夹的第二互连件126附接至功率半导体裸片114的其他(源极/发射极)顶侧端子122。根据图2的实施例，每个互连件124、126的一端128、130附接至功率半导体裸片114的对应顶侧端子120、122，以及每个互连件124、126的另一端132、134附接至功率板的最上面的金属化层116的分离部分116b、116c。功率板的最上面的金属化层116的、附接至栅极互连件124的部分116b是虚拟部分，该虚拟部分并不电接触到功率半导体模块的外部，因为柔性板104为功率半导体裸片114提供栅极信号。通常，任何标准接合技术(诸如超声键合、烧结、扩散焊接、钎焊、激光焊接、EBW等)可用于将互连件124、126的一端128、130接合至功率半导体裸片114的对应顶侧端子124、126以及将互连件124、126的另一端132、134接合至功率板的最上面的金属化层116的对应部分116b、116c。
在一个实施例中，互连件124、126是厚度为至少150μm的铜线、厚度至少为100μm的铜带或者厚度至少为300μm的铜夹。线、带或夹124、126可以通过另一金属镀覆或通过例如薄聚合物涂覆。可选地，铝线或铝带可用作互连件124、126。在互连件124、126接合至功率半导体裸片114的顶侧端子120、122之后，柔性板104被附接至互连件124、126。在一个实施例中，柔性板104是柔性PCB或柔性电路板。
柔性板104的下金属层108例如通过焊料或激光焊接136附接至互连件中的第一互连件124(例如，栅极互连件)，并且柔性板104的上金属层106例如通过导电过孔、焊料或激光焊接138(延伸穿过柔性板104的绝缘体110)附接至互连件中的第二互连件126(例如，源极或发射极互连件)。例如，在功率MOSFET或IGBT裸片的情况下，裸片114的第一顶侧端子120是控制或栅极端子，以及裸片114的第二顶侧端子122是功率发射极或源极端子。第二顶侧端子122是‘功率’端子，因为该端子在功率裸片114的主电流流动路径中。柔性板104的下金属层108附接至第一(栅极)互连件124的位于第一互连件124的第一端128和第二端132之间的部分，并且柔性板104的上金属层106类似地附接至第二(源极/发射极)互连件126的位于第二互连件126的第一端130和第二端134之间的部分。
柔性板104的上金属层106被配置为承载从外部栅极驱动电路到附接至功率半导体裸片114的源极/发射极端子122的互连件126的接地信号。柔性板104的下金属层108被配置为承载从外部栅极驱动电路到附接至功率半导体裸片114的控制或栅极端子120的互连件124的栅极驱动信号。通过这种结构，柔性板104通过附接至功率半导体裸片114的顶侧端子120、122的互连件124、126与功率半导体裸片114隔开。在上金属层106与对应互连件126的连接区域中去除下金属层108，从而不干扰该电连接。金属层106还可以在接头136周围预移动，以允许接头136也具有过孔，或者例如从顶侧被激光焊接。柔性板104的金属层106、108可以使用任何标准接合技术(诸如超声键合、烧结、扩散焊接、钎焊、激光焊接、EBW等)附接至对应的互连件124、126。
图3示出了根据另一实施例的去除壳体100的功率半导体模块的截面图。图3所示的实施例类似于图2的实施例，然而功率半导体114的第二端子122是辅助发射极/源极端子，而不是主功率发射极/源极端子140。辅助发射极/源极端子122不被供电并且耦合至功率晶体管的主发射极/源极。如此，只有驱动电流而非主功率电流经由功率半导体模块的对应互连件126流向辅助发射极/源极端子122。可以为功率晶体管裸片114的主(供电)发射极/源极连接提供独立的顶侧端子140。主功率发射极/源极端子140可以与辅助发射极/源极端子122短路。功率晶体管裸片114的顶部上的大金属化层形成功率半导体114的发射极/源极。通过放置端子126而不短路最上面的金属化层116的部分116c和116e，端子126变为辅助发射极。端子126拾取直接位于半导体顶侧处的电压，并且沿着附加互连件142的由于寄生电感或电阻的任何电压降被旁路。
附加互连件142具有附接至半导体裸片114的主源极/发射极端子140的第一端144以及附接至功率板的最上面的金属化层116的一个部分116e的第二端146。金属化层116的该部分116e在功率器件的主电流流动路径中。根据该实施例，柔性板104的金属层106、108都不附接至模块的供电发射极/源极互连件142。附接至辅助发射极/源极互连件126的第二端134的、板的最上面的金属化层116的部分116c是虚拟部分，该虚拟部分并不电接触到功率半导体模块的外部并且不作为功率器件的主电流流动路径的部分。
图4示出了根据又一实施例的去除壳体100的功率半导体模块的截面图。图4所示实施例类似于图3所示的实施例，然而，栅极互连件124具有附接至半导体裸片114的控制或栅极端子120的第一部分的第一端128以及附接至控制或栅极端子120的第二部分的第二端132。柔性板104的下金属层108附接至栅极互连件124的位于栅极互连件124的第一端128和第二端132之间的部分。辅助发射极/源极互连件126类似地具有附接至半导体裸片114的辅助发射极/源极端子122的第一部分的第一端130以及附接至辅助发射极/源极端子122的第二部分的第二端134。柔性板104的上金属层106附接至辅助发射极/源极互连件126的位于辅助发射极/源极互连件126的第一端130和第二端134之间的部分。该结构消除了对应虚拟栅极和发射极/源极部分图案化到功率板的最上面的金属化层116中的需求。图2所示的栅极互连件124可以具有类似结构，即，两端128、132附接至功率半导体裸片114的控制或栅极端子120。同样，主功率发射极/源极端子140和辅助发射极/源极端子122可以被短路。
图5示出了根据又一实施例的去除壳体100的功率半导体模块的截面图。图5所示实施例类似于图4所示实施例，然而栅极互连件124具有附接至功率半导体裸片114的控制或栅极端子120的一端132以及设置在第一端132上并附接至第一端132的另一端128。以这种方式，裸片控制或栅极端子120的大小不需要被放大来容纳栅极互连件124的两端128、132。
柔性板104的下金属层108附接至栅极互连件124的位于栅极互连件124的堆叠第一端128和第二端132之间的部分。此外或可选地，辅助发射极/源极互连件126可以具有与栅极互连件124相同的堆叠端结构。柔性板104的上金属层106附接至辅助发射极/源极互连件126的位于辅助发射极/源极互连件126的堆叠端130、134之间的部分。
图6示出了根据另一实施例的去除壳体100的功率半导体模块的截面图。图6所示实施例类似于图4和图5的实施例，然而栅极互连件124具有附接至功率半导体114的控制或栅极端子120的第一端128以及通过所谓的凸块键合件(stud bond)136附接至柔性板104的下金属层108的第二(未弯曲)端。在键合线互连件的情况下，可以通过切割或拉动对应键合线124来形成第二(未弯曲)端132。此外或可选地，辅助发射极/源极互连件126可具有相同的通过延伸穿过柔性板104的绝缘体110的导电过孔、焊料或激光焊接138而与柔性板的上金属层106的未弯曲端连接结构。
图7和图8示出了制造功率半导体模块的方法的实施例，其中功率半导体模块具有为容纳在功率半导体模块内的半导体裸片提供外部驱动连接的柔性板。
在图7中，多个功率半导体裸片200附接至诸如DCB、AMB或DAB衬底、PCB或引线框之类的功率板202。功率板202可以包括设置在绝缘衬底206上或绝缘衬底206中的一个或多个金属化层204。功率半导体裸片200附接至功率板202的最上面的金属化层204。最上面的金属化层204被图案化为相互分离的多个部分204a、204b、204c。每个功率半导体裸片200的下侧(图中看不到)附接至图案化金属化层204的部分中的第一部分204a。在电流流动方向在裸片200的顶侧和底侧之间的垂直器件的情况下，裸片200的下侧可以是诸如MOSFET的漏极、IGBT的集电极或功率二极管的阳极之类的功率端子。功率端子例如通过扩散焊接、烧结、焊接、胶合等附接至功率板202的图案化金属化层204的第一部分204a。在电流流动方向为水平的横向器件的情况下，裸片200的下侧不是活性的。
在任一种情况下，至少一些功率半导体裸片200是如下功率晶体管裸片，该功率晶体管裸片都具有在裸片200的远离功率板202的图案化金属化层204的一侧处设置的第一端子208和第二端子210。例如在功率MOSFET的情况下，每个功率MOSFET裸片200都可以具有位于裸片200的远离图案化金属化层204的一侧处的栅极端子208和源极端子210。在IGBT的情况下，每个IGBT裸片200都可以具有位于裸片200的远离图案化金属化层204的一侧处的栅极端子208和发射极端子210。在功率二极管的情况下，每个二极管裸片200都可以具有位于裸片的远离图案化金属化层204的一侧处的阴极端子210，并且省略栅极端子208。
对于功率晶体管裸片200来说，诸如键合线、键合带或金属夹之类的第一互连件212附接至功率晶体管裸片200的第一(例如，栅极)端子208，并且诸如键合线、键合带或金属夹之类的第二互连件214附接至功率晶体管裸片200的第二(例如，发射极或源极)端子210。在功率二极管裸片200的情况下，只需要第二互连件214接触二极管裸片200的阳极或阴极端子210。
作为功率互连件的第二互连件214通常被平行放置以形成功率端子并且在第一端216处附接至功率半导体裸片200的第二端子210。每个第二互连件214的第二端218附接至图案化金属化层204的部分中的第二部分204b。第一互连件212在第一端220处附接至功率半导体裸片200的第一端子208以及在第二端222处附接至图案化金属化层204的部分中的第三部分204c。第二互连件214相互平行地从图案化金属化层204的第二部分204b延伸到对应半导体裸片200的第二端子210。
在图8中，提供柔性板224。柔性板224可以从模块壳体(未示出)突出并且与模块壳体外的驱动电路(也没有示出)接触以实现从驱动电路到模块壳体内的功率半导体裸片200的平行板波导设计。驱动电路/电子器件可以如本文前面所述那样集成在柔性板224上，使得柔性板224用作顶侧互连件212、214的总线、驱动电路的载体以及控制器或任何外部通信装置的接口。可选地或另外地，一个或多个驱动电路裸片可以设置在另一壳体中或者附接至与功率半导体模块分离的另一板。
在每一种情况下，柔性板224都包括第一(下)金属层226、第二(上)金属层228以及绝缘体230，绝缘体230位于下金属层226和上金属层228之间使得下金属层226和上金属层228相互电绝缘。下金属层226附接至第一(例如，栅极)互连件212，上金属层228附接至第二(例如，发射极/源极)互连件214，使得柔性板224通过互连件212、214与功率半导体裸片200隔开。在激光焊接被用作接合技术的情况下，上金属层228具有露出下面的绝缘体230的开口232。激光束在柔性板224处向下引导并进入形成在上金属层228中的开口232。激光束提供集中的热源，其可以熔化绝缘体230并熔化局部区域中的下金属层226，允许与第一互连件212的窄焊接234。可选地，可使用电子束焊接(EBW)，其中高速率电子束被施加于待接合的材料。通过EBW，随着电子的动能在冲击时被转换为热量，工件熔化并流到一起。上金属层228可以类似地例如通过激光或电子束焊接而接合至第二互连件214，在上金属层228和第二互连件214之间的焊接区域的整个区域中去除下金属层226以防止柔性板224的下金属层226和上金属层228之间的短路。在激光焊接的情况下，集中的激光束在局部区域中熔化上金属层228和下面的绝缘体230，以提供与第二互连件214的窄焊接236。诸如烧结、扩散焊接或钎焊之类的其他接合方法可用于在柔性板224的金属层226、228与功率半导体模块的对应互连件212、214之间形成局部连接。在图8中，柔性板224中的电流流动方向垂直于图8所示实线箭头所表示的第二互连件214的平行布置。例如如图1所示，可以添加壳体以包围互连件212、214和功率半导体裸片200。
图9示出了在柔性板224附接至模块下面的互连件212、214之后的功率半导体模块的另一实施例。图9所示实施例类似于图8所示的实施例，然而柔性板224中的电流流动方向与图9中实线箭头表示的第二互连件214的平行布置平行。
图10和图11示出了制造功率半导体模块的方法的另一实施例，其中功率半导体模块具有为容纳在功率半导体模块内的半导体裸片提供外部驱动连接的柔性板。
在图10中，多个功率半导体裸片300附接至诸如DCB、AMB或DAB衬底、PCB或引线框的功率板302，功率板302可以包括设置在绝缘衬底306上或绝缘衬底306中的一个或多个金属化层304。功率半导体裸片300附接至功率板302的最上面的金属化层304。最上面的金属化层304被图案化为相互分离的多个部分304a、304b、304c。每个功率半导体裸片300的下侧(图中看不到)附接至图案化金属化层304的部分中的第一部分304a。在电流流动方向在裸片300的顶侧和底侧之间的垂直器件的情况下，裸片300的下侧可以是诸如功率MOSFET的漏极、IGBT的集电极或者功率二极管的阳极或阴极之类的功率端子。功率端子例如通过扩散焊接附接至功率板302的图案化金属化层304的第一部分304a。在电流流动方向为水平的横向器件的情况下，裸片300的下侧不是活性的且仅仅散热。在这种情况下，裸片300的下侧可以焊接或胶合至图案化金属化层304的第一部分304a。
在任一种情况下，至少一些功率半导体裸片300是如下功率晶体管裸片，该功率晶体管裸片都具有在裸片300的远离功率板302的图案化金属化层304的一侧处设置的第一端子308和第二端子310。例如，在功率MOSFET的情况下，每个功率MOSFET裸片300都可以具有位于裸片300的远离功率板302的一侧处的栅极端子308和源极端子310。在IGBT的情况下，每个IGBT裸片300都可以具有位于裸片300的远离功率板302的一侧处的栅极端子308和发射极端子310。在功率二极管300的情况下，每个二极管裸片300都可以具有位于裸片300的远离功率板302的一侧处的阴极端子310，并且省略栅极端子308。
对于功率晶体管裸片300来说，诸如键合线、键合带或金属夹之类的第一互连件312附接至功率晶体管裸片300的第一(例如，栅极)端子308，并且诸如键合线、键合带或金属夹之类的第二互连件314附接至功率晶体管裸片300的第二(例如，发射极或源极)端子310。在功率二极管裸片300的情况下，仅需要第二互连件314接触二极管的阳极或阴极端子。
第二互连件314在第一端316处附接至功率半导体裸片300的第二端子310。每个第二互连件314的相对端318都附接至功率板302的图案化金属化层304的部分中的第二部分304b。图案化金属化层304的第一部分304a和第二部分304b具有交错的指状结构。第一互连件312在第一端320处附接至功率半导体裸片300的第一端子308并且在第二端322处附接至功率板302的图案化金属化层304的部分中的第三部分304c。第二互连件314相互平行地从图案化金属化层304的第二部分304b延伸到对应半导体裸片300的第二端子310。
在图11中，提供柔性板324。柔性板324可以从模块壳体(未示出)突出并且接触模块壳体外的驱动电路以实现从驱动电路到模块内的功率半导体裸片300的平行板波导设计。驱动电路/电子器件可以如先前所述那样集成在柔性板324上，使得柔性板324用作模块互连件312、314的总线、驱动电路的载体以及控制器或任何外部通信装置的接口。可选地或另外地，一个或多个驱动电路裸片可设置在另一壳体中或者附接至与功率半导体模块分离的另一板。
在每一种情况下，柔性板324都包括第一(下)金属层326、第二(上)金属层328以及绝缘体330，绝缘体330位于下金属层326和上金属层328之间使得下金属层326和上金属层328相互电绝缘。下金属层326附接至第一(例如，栅极)互连件312，并且上金属层328附接至第二(例如，发射极/源极)互连件314，使得柔性板324通过互连件312、314与功率半导体裸片300隔开。在激光焊接作为接合技术的情况下，上金属层328具有露出下面的绝缘体330的开口332。激光束在柔性板324处向下引导并进入形成在上金属层328中的开口332。激光束提供在局部区域中熔化绝缘体330和下金属层326的集中热源，允许与第一互连件312的窄焊接334。上金属层328例如通过激光或电子束焊接在局部区域中经由焊接336类似地接合至第二互连件314。在上金属层328和第二互连件314之间的焊接区域的整个区域中去除下金属层326，以防止柔性板324的下金属层326和上金属层328之间的短路。在激光焊接的情况下，集中的激光束在局部区域中熔化上金属层328和下面的绝缘体330以提供与第二互连件314的窄焊接336。诸如烧结、扩散焊接、钎焊或EBW的其他接合方法可用于局部地形成柔性板324的金属层326、328与功率半导体模块的互连件312、314之间的局部连接。在图11中，柔性板324中的电流流动方向与由图11所示实线箭头表示的第二互连件314的平行布置平行。可选地，柔性板324可以被布置为使得柔性板324中的电流流动方向垂直于第二互连件314的平行布置(例如，如图8所示)。在任一种情况下，随后可以添加壳体来作为功率半导体模块的一部分(例如，如图1所示)。
功率半导体模块还包括从功率板302的图案化金属化层304的第一部分304a垂直延伸的第一多个功率端子338以及从图案化金属化层304的第二部分304b垂直延伸且平行于第一多个功率端子338的第二多个功率端子340。功率端子338、340为模块内的半导体裸片300提供主供电连接。在一个实施例中，柔性板324垂直于功率端子328、340延伸并且在到达功率端子338、340之前终止。通过这种结构，实现了低电感对称功率电路和低电感对称栅极电路。例如，在IGBT裸片300的情况下，功率板302上的集电极金属304a以梳状布置延伸到功率板金属化层304的发射极金属304b中。若干端子或端子足部(基部)338、340平行地放置在那里。发射极和集电极端子或端子足部的行相互相邻并且极为贴近以实现集电极-发射极功率电路内的低寄生电感。例如如图1所示，可以添加壳体作为功率半导体模块的一部分。
图12示出了根据另一实施例的去除壳体100的功率半导体模块的截面图。图12所示的实施例类似于图2所示实施例，然而续流二极管400反平行地连接至功率半导体裸片114(其在该实施例中为IGBT)。续流二极管400的阳极端子402位于二极管400的顶侧处。阳极端子402经由第二互连件126键合至IGBT 114的顶侧发射极端子122。诸如键合线、键合带或金属夹的附加互连件404在第一端处例如通过针脚式键合附接至第二互连件126，并且在相对端处附接至功率板的最上面的金属化层116的部分116c。附加互连件404在其相对端之间通过延伸穿过柔性板104的绝缘体110的导电过孔、焊料或激光焊接138而连接至柔性板104的上金属层106。续流二极管400的底侧处的阴极端子连接至作为IGBT 114的集电极(底侧)端子的、功率板的最上面的金属化层116的相同部分116a，以完成反平行连接。
在本文前面描述的任何实施例中，柔性板的顶部金属层106和底部金属层108都可以相对于栅极和发射极/源极连接互换。在一些情况下，顶部金属层106具有如图9至图11所示的开口(232、332)，并且可以提供过孔来支持与底部金属层108的接合。还可以提供过孔用于支持与顶部金属层106的接合。典型地，功率模块包括相互隔离的功率半导体或功率半导体阵列(平行功率半导体)中的两个或多个分支。柔性板104和裸片114附接至的功率板的最上面的金属化层116之间的间隔通常为2mm至8mm，至少为1mm，最大为50mm。本文参照驱动器所使用的术语‘接地’不是整个功率电路的实际(地表)接地。
为了容易描述而使用诸如“下方”、“之下”、“下”、“上方”、“上”等的空间相对术语，从而解释一个元件相对于第二元件的定位。这些术语旨在涵盖除图中描述的不同定向之外的器件的不同定向。此外，诸如“第一”、“第二”等的术语也用于描述各种元件、区域、部分等，并且也不旨在进行限制。类似的参考标号在整个说明书中表示类似的元件。
如本文所使用的，术语“具有”、“包含”、“包括”、“含有”等是开放的术语，其表示存在所提到的元件或特征，但是不排除附加元件或特征。定冠词“一个”、“该”旨在包括多个以及单个，除非另有明确指定。
应该理解，本文描述的各个实施例的特征可以相互组合，除非另有明确指定。
尽管本文示出和描述了具体实施例，但本领域技术人员应该理解，在不背离本发明的精神的情况下可以对所示和所描述的具体实施例进行各种更改和/或等效实施。本申请旨在覆盖本文所讨论的具体实施例的任何更改或变化。因此，旨在于仅通过权利要求及其等效物来限制本发明。

Claims (19)

1.一种功率半导体模块，包括：
金属化层；
功率半导体裸片，附接至所述金属化层并具有位于所述裸片的远离所述金属化层的一侧处的第一端子和第二端子；
第一互连件，附接至所述第一端子；
第二互连件，附接至所述第二端子；以及
柔性板，包括第一金属层、第二金属层和绝缘体，所述绝缘体位于所述第一金属层和所述第二金属层之间使得所述第一金属层和所述第二金属层相互电绝缘；
其中，所述第一金属层附接至所述第一互连件且所述第二金属层附接至所述第二互连件，使得所述柔性板通过所述第一互连件和所述第二互连件与所述功率半导体裸片隔开，
其中，所述柔性板的所述第一金属层被配置为承载来自外部驱动器的接地信号，并且所述柔性板的所述第二金属层被配置为承载来自所述外部驱动器的驱动信号；以及
其中，所述外部驱动器的一个或多个半导体裸片和/或无源部件附接至所述柔性板的从所述功率半导体模块的壳体突出的部分。
2.根据权利要求1所述的功率半导体模块，其中，所述第一互连件和所述第二互连件是键合线、键合带或金属夹。
3.根据权利要求1所述的功率半导体模块，其中，所述第一金属层被焊接至所述第一互连件，并且所述第二金属层被焊接至所述第二互连件。
4.根据权利要求1所述的功率半导体模块，其中：
所述功率半导体裸片的所述第一端子是发射极或源极端子；以及
所述功率半导体裸片的所述第二端子是控制或栅极端子。
5.根据权利要求1所述的功率半导体模块，其中：
所述金属化层具有相互分离的多个部分；以及
所述功率半导体裸片在所述裸片的面对所述金属化层的一侧处附接至所述金属化层的所述部分中的第一部分。
6.根据权利要求5所述的功率半导体模块，其中：
所述第一互连件具有与所述半导体裸片的所述第一端子附接的第一端以及与所述金属化层的所述部分中的第二部分附接的第二端；
所述第二互连件具有与所述半导体裸片的所述第二端子附接的第一端以及与所述金属化层的所述部分中的第三部分附接的第二端；
所述柔性板的所述第一金属层附接至所述第一互连件的位于所述第一互连件的所述第一端和所述第二端之间的部分；以及
所述柔性板的所述第二金属层附接至所述第二互连件的位于所述第二互连件的所述第一端和所述第二端之间的部分。
7.根据权利要求6所述的功率半导体模块，其中：
所述功率半导体裸片的所述第二端子是辅助发射极或源极端子；
所述功率半导体模块还包括第三互连件，所述第三互连件的第一端在所述裸片的与所述辅助发射极或源极端子相同的一侧处附接至所述半导体裸片的主源极或发射极端子，并且所述第三互连件的第二端附接至所述金属化层的所述部分中的第四部分；以及
所述柔性板的所述第一金属层和所述第二金属层不连接至所述第三互连件。
8.根据权利要求1所述的功率半导体模块，其中：
所述第一互连件具有与所述半导体裸片的所述第一端子的第一部分附接的第一端以及与所述第一端子的第二部分附接的第二端；以及
所述柔性板的所述第一金属层附接至所述第一互连件的位于所述第一互连件的所述第一端和所述第二端之间的部分。
9.根据权利要求8所述的功率半导体模块，其中：
所述第二互连件具有与所述半导体裸片的所述第二端子的第一部分附接的第一端以及与所述第二端子的第二部分附接的第二端；以及
所述柔性板的所述第二金属层附接至所述第二互连件的位于所述第二互连件的所述第一端和所述第二端之间的部分。
10.根据权利要求8所述的功率半导体模块，其中：
所述功率半导体裸片的所述第二端子是辅助发射极或源极端子；
所述功率半导体模块还包括第三互连件，所述第三互连件的第一端在所述裸片的与所述辅助发射极或源极端子相同的一侧处附接至所述半导体裸片的主源极或发射极端子，并且所述第三互连件的第二端附接至所述金属化层；以及
所述柔性板的所述第一金属层和所述第二金属层不连接至所述第三互连件。
11.根据权利要求1所述的功率半导体模块，其中：
所述第一互连件的第一端附接至所述半导体裸片的所述第一端子且所述第一互连件的第二端设置在所述第一端上且附接至所述第一端；以及
所述柔性板的所述第一金属层附接至所述第一互连件的位于所述第一互连件的所述第一端和所述第二端之间的部分。
12.根据权利要求11所述的功率半导体模块，其中：
所述第二互连件的第一端附接至所述半导体裸片的所述第二端子且所述第二互连件的第二端设置在所述第一端上且附接至所述第一端；以及
所述柔性板的所述第二金属层附接至所述第二互连件的位于所述第二互连件的所述第一端和所述第二端之间的部分。
13.根据权利要求11所述的功率半导体模块，其中：
所述功率半导体裸片的所述第二端子是辅助发射极或源极端子；
所述功率半导体模块还包括第三互连件，所述第三互连件的第一端在所述裸片的与所述辅助发射极或源极端子相同的一侧处附接至所述半导体裸片的主源极或发射极端子，并且所述第三互连件的第二端附接至所述金属化层；以及
所述柔性板的所述第一金属层和所述第二金属层不连接至所述第三互连件。
14.根据权利要求1所述的功率半导体模块，其中，所述第一互连件的第一端附接至所述半导体裸片的所述第一端子且所述第一互连件的第二端附接至所述柔性板的所述第一金属层。
15.根据权利要求14所述的功率半导体模块，其中，所述第二互连件的第一端附接至所述半导体裸片的所述第二端子且所述第二互连件的第二端附接至所述柔性板的所述第二金属层。
16.根据权利要求14所述的功率半导体模块，其中：
所述功率半导体裸片的所述第二端子是辅助发射极或源极端子；
所述功率半导体模块还包括第三互连件，所述第三互连件的第一端在所述裸片的与所述辅助发射极或源极端子相同的一侧处附接至所述半导体裸片的主源极或发射极端子，并且所述第三互连件的第二端附接至所述金属化层；以及
所述柔性板的所述第一金属层和所述第二金属层不连接至所述第三互连件。
17.一种功率半导体模块，包括：
图案化金属化层，具有相互隔开的多个部分；
多个功率半导体裸片，至少附接至所述图案化金属化层的所述部分中的第一部分，并且每一个功率半导体裸片都具有在所述裸片的远离所述图案化金属化层的一侧处设置的第一端子和第二端子；
第一互连件，附接至所述功率半导体裸片的所述第一端子；
第二互连件，附接至所述功率半导体裸片的所述第二端子；以及
柔性板，包括第一金属层、第二金属层以及绝缘层，所述绝缘层位于所述第一金属层与所述第二金属层之间使得所述第一金属层和所述第二金属层相互电绝缘，
其中，所述第一金属层附接至所述第一互连件且所述第二金属层附接至所述第二互连件，使得所述柔性板通过所述第一互连件和所述第二互连件与所述功率半导体裸片隔开，以及
其中，所述第二互连件从所述图案化金属化层的所述部分中的第二部分平行地延伸到对应半导体裸片的所述第二端子；并且所述柔性板中的电流流动方向平行于所述第二互连件。
18.根据权利要求17所述的功率半导体模块，其中：
所述第二互连件在第一端处附接至所述功率半导体裸片的所述第二端子并且在第二端处附接至所述图案化金属化层的所述部分中的第二部分；
所述功率半导体模块包括从所述图案化金属化层的所述第一部分垂直延伸的第一多个功率端子以及从所述图案化金属化层的所述第二部分垂直延伸且平行于所述第一多个功率端子的第二多个功率端子；以及
所述柔性板垂直于所述第一多个功率端子和所述第二多个功率端子延伸并且在所述第一多个功率端子和所述第二多个功率端子之前终止。
19.一种制造功率半导体模块的方法，所述方法包括：
将功率半导体裸片附接至金属化层，所述功率半导体裸片具有在所述裸片的远离所述金属化层的一侧处设置的第一端子和第二端子；
将第一互连件附接至所述第一端子且将第二互连件附接至所述第二端子；
提供柔性板，所述柔性板包括第一金属层、第二金属层和绝缘体，所述绝缘体位于所述第一金属层和所述第二金属层之间使得所述第一金属层和所述第二金属层相互电绝缘；
将所述第一金属层附接至所述第一互连件且将所述第二金属层附接至所述第二互连件，使得所述柔性板通过所述第一互连件和所述第二互连件与所述功率半导体裸片隔开，
其中，所述柔性板的所述第一金属层被配置为承载来自外部驱动器的接地信号，所述柔性板的所述第二金属层被配置为承载来自所述外部驱动器的驱动信号；以及
其中，所述外部驱动器的一个或多个半导体裸片和/或无源部件附接至所述柔性板的从所述功率半导体模块的壳体突出的部分。
CN201510883694.2A 2015-01-08 2015-12-04 具有低栅极驱动电感柔性板连接的功率半导体模块 Active CN105789157B (zh)

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