CN105763190A - Low-phase noise radio frequency synthesis circuit - Google Patents
Low-phase noise radio frequency synthesis circuit Download PDFInfo
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- CN105763190A CN105763190A CN201610195107.5A CN201610195107A CN105763190A CN 105763190 A CN105763190 A CN 105763190A CN 201610195107 A CN201610195107 A CN 201610195107A CN 105763190 A CN105763190 A CN 105763190A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
Abstract
The invention discloses a low-phase noise radio frequency synthesis circuit. The circuit includes a low-phase noise crystal oscillator, the low-phase noise crystal oscillator is connected with an input end of a first-stage signal amplifier, the output end of the first-stage signal amplifier is connected with the input end of a first-stage SBD frequency tripler, the output end of the first-stage SBD frequency tripler is connected with the input end of a second-stage signal amplifier, the output end of the second-stage signal amplifier is connected with the first input end of a modulator, triangular waves are accessed to the second input end of the modulator, the output end of the modulator is connected with the input end of a second-stage SBD frequency tripler, and the output end of the second-stage SBD frequency tripler is connected with the input end of a third-stage signal amplifier. The low-phase noise radio frequency synthesis circuit has the advantages that phase noise is low, harmonic and clutter characteristics are excellent, and debugging is easy. By utilization of the circuit, phase noise of a rubidium frequency scale microwave search signal can be remarkably reduced, and limitation of an intermodulation effect on rubidium frequency scale frequency stability is lowered.
Description
Technical field
The present invention relates to Rb atom frequency marking frequency synthesis technique field, be specifically related to low phase noise rf frequency combiner circuit, it is achieved 9 frequencys multiplication and square wave frequency modulation, utilize the low phase noise characteristic of this circuit, improve Rb atom frequency marking frequency stability index.
Background technology
Rb atom frequency marking is a FLL being descriminator with physical system, is locked in by 10MHz crystal oscillator frequency in rubidium atomic transition frequency, makes crystal oscillator frequency have the high stability characteristic same with atomic transition frequency.Rb atom frequency marking adopts frequency synthesis technique that the microwave that 10MHz crystal oscillation signal is converted to the 6.834GHz modulated is sought signal, feed-in physical system, excitation atom system generation resonant transition, utilize the technology such as light detection, synchronous detection that frequency discrimination signal is processed, obtain controlling the deviation correcting signal of 10MHz crystal oscillator frequency, as shown in Figure 1.
Frequency stability is the core index of Rb atom frequency marking.Generally, rubidium frequency standard frequency stability is together decided on by physical system signal to noise ratio and frequency synthesis system phase noise.The frequency synthesis system level of making an uproar mutually is the key factor of restriction frequency stability.Frequency synthesis system phase noise is converted into the white frequency noise being superimposed upon in frequency discrimination signal through physical system, is called intermodulation noise.The available Allan deviation chart of restriction of frequency stability is shown as by intermodulation noise:
Wherein v0For the frequency of carrier signal, fMFor modulating frequency, L (2nfM) for v0At 2nfMPlace's phase noise spectrum.
In a kind of common implementation, the frequency synthesis system of Rb atom frequency marking is made up of 10MHz crystal oscillator, manipulator, No. 9 doubler, No. 76 doubler of step-recovery diode (SRD) and synthesizer.Generally can ignore SRD doubler and synthesizer and microwave is sought the impact that signal is made an uproar mutually.Therefore, making an uproar mutually of frequency synthesis system is limited to 10MHz crystal oscillator, manipulator and No. 9 doubler, above three parts is collectively referred to as rf frequency combiner circuit, as shown in Figure 1.Conventional radio frequency frequency synthesis scheme is that 10MHz crystal oscillation signal carries out triangular wave phase modulation (square wave frequency modulation), and the differential pair tube circuit of recycling audion composition carries out two-stage 3 frequency multiplication, obtains the 90MHz signal modulated.Program circuit output signal phase noise is relatively big, and wherein manipulator is the critical piece worsened of making an uproar mutually with the first order 3 frequency multiplication.Manipulator is positioned at 10MHz crystal oscillator rear class, can worsen the level of making an uproar mutually of frequency multiplication input signal；The first order 3 frequency multiplication adopts differential pair tube structure, if transistor noise figure is big, can introduce additional phase noise.In addition, the shortcomings such as the program also has humorous clutter big, and debugging is complicated.
Summary of the invention
It is an object of the invention to the problems referred to above existed for prior art, it is provided that low phase noise rf frequency combiner circuit, possess low phase noise, humorous interference wave restranint height, be prone to the advantages such as debugging.Utilize this circuit can significantly improve rubidium frequency standard microwave and seek the phase noise of signal, reduce the intermodulation effect restriction to rubidium frequency standard frequency stability.
To achieve these goals, the present invention adopts the following technical scheme that
Low phase noise rf frequency combiner circuit, including Low phase noise crystal oscillator, Low phase noise crystal oscillator is connected with the input of one stage signal amplifier, the outfan of one stage signal amplifier is connected with the input of one-level SBD frequency tripler, the outfan of one-level SBD frequency tripler is connected with the input of second signal amplifier, the outfan of second signal amplifier is connected with the first input end of manipulator, second input of manipulator accesses triangular wave, the input of the outfan of manipulator and two grades of SBD frequency triplers connects, the input of the outfan of two grades of SBD frequency triplers and three grades of signal amplifiers connects.
One-level SBD frequency tripler as above and two grades of SBD frequency triplers all include inductance L1, inductance L2, inductance L3, inductance L4, full wave bridge rectifier, electric capacity C1, electric capacity C2 and electric capacity C3, one end of inductance L1 is as input, the other end is connect electrically by electric capacity C1 and also is connected with inductance L2 one end by full wave bridge rectifier, the inductance L2 other end connects electrically by inductance L3, inductance L2 two ends are parallel with electric capacity C2, inductance L3 two ends and are parallel with electric capacity C3.
Full wave bridge rectifier as above includes diode D1, diode D2, diode D3, diode D4 and inductance L4, the anode of diode D1 is connected and as input with the negative electrode of diode D2, the anode of diode D4 is connected and as outfan with the negative electrode of diode D3, the negative electrode of diode D1 is connected with one end of the negative electrode of diode D4 and inductance L4 respectively, and the anode of diode D2 is connected with the other end of the anode of diode D3 and inductance L4 respectively.
nullManipulator as above includes electric capacity C4、Electric capacity C5、Electric capacity C6、Double; two electricity adjust varactor VD1、Double; two electricity adjust varactor VD2、Inductance L5 and inductance L6，Positive pole and double; two electricity of double; two electricity tune varactor VD1 adjust the positive pole connection of varactor VD2 and the second input as manipulator，Inductance L5 one end and inductance L6 one end connect and as the Dc bias input of manipulator，The inductance L5 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，The inductance L6 other end adjusts the negative pole of varactor VD2 to be connected with double; two electricity，Electric capacity C4 one end is as the first input end of manipulator，The electric capacity C4 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，Electric capacity C5 one end is as the outfan of manipulator，The electric capacity C5 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，The two ends of electric capacity C6 adjust the negative pole of varactor VD1 and double; two electricity to adjust the negative pole of varactor VD2 to be connected respectively with double; two electricity.
nullOne stage signal amplifier as above、Second signal amplifier and three grades of signal amplifiers all include resistance R1、Resistance R2、Resistance R3、Electric capacity C7、Electric capacity C8、Electric capacity C9、Electric capacity C10、Inductance L7、Inductance L8、Audion Q1，Resistance R2 one end and inductance L7 one end are connected with power supply respectively，The other end of resistance R2 is connected with audion Q1 base stage，Audion Q1 base stage is connect electrically by resistance R3，The inductance L7 other end is connected with audion Q1 collector，Audion Q1 collector is connected with electric capacity C10 one end，The electric capacity C10 other end is as outfan，The two ends of inductance L7 are parallel with electric capacity C7，Audion Q1 emitter stage is connected with electric capacity C9 one end，The electric capacity C9 other end is as input，Audion Q1 emitter stage is connected with resistance R1 one end，The resistance R1 other end is connect electrically by inductance L8，Inductance L8 two ends are parallel with electric capacity C8.
Select 10MHz Low phase noise VCXO, first it is carried out signal processing and amplifying, recycling Schottky diode (SBD) frequency tripler, frequency-selective amplifier obtain 30MHz signal, adopt a kind of controllable phase shifter being adjusted varactor and series resonant network to constitute by double; two electricity as modulation circuit, 30MHz signal is carried out triangular wave phase modulation (square wave frequency modulation), finally amplifies, then through SBD frequency tripling and frequency-selecting, the 90MHz obtaining being modulated and export signal.
This circuit arrangement has the advantage that compared with tradition rubidium frequency standard rf frequency combiner circuit scheme
One, phase noise is low.Adopting phase homophase to make an uproar the crystal oscillator of level, this programme level of making an uproar mutually is substantially better than traditional scheme.
Main cause has 2 points:
1) SBD white noise and flicker noise characteristic are superior to audion, adopt SBD doubler can effectively reduce the level of making an uproar mutually of integrated circuit.
2) change 10MHz modulation into 30MHz modulation, utilize the intrinsic phase that frequency multiplication introduces to make an uproar 20log (3), making an uproar mutually of manipulator introducing can be ignored.
Two, humorous noise performance is excellent.This programme 90MHz output spectrum substantially only comprises each harmonic of 90MHz, and each harmonic of 10MHz signal is all only small.
Main cause has 2 points:
1) not in use by tradition audion to pipe total radio amplifier, but the grounded base amplifying circuit of excellent in high-frequency characteristics is adopted.
2) SBD frequency tripler just can suppress even-order harmonic in principle so that this humorous noise performance of frequency multiplication scheme is better than tradition audion to pipe doubler.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of conventional radio frequency frequency synthesis scheme.
Fig. 2 is the electrical block diagram of the present invention.
Fig. 3 is the electrical block diagram of first/second SBD frequency tripler.
Fig. 4 is the electrical block diagram of manipulator.
Fig. 5 is the electrical block diagram of one-level/bis-grade/tri-grade signal amplifier.
In figure: 1-Low phase noise crystal oscillator；2-one stage signal amplifier；3-one-level SBD frequency tripler；4-second signal amplifier；5-manipulator；Bis-grades of SBD frequency triplers of 6-；Tri-grades of signal amplifiers of 7-.
Detailed description of the invention
Embodiment 1:
As shown in Figure 2, low phase noise rf frequency combiner circuit, including Low phase noise crystal oscillator 1 (selecting 10MHz Low phase noise crystal oscillator), Low phase noise crystal oscillator 1 is connected with the input of one stage signal amplifier 2, the outfan of one stage signal amplifier 2 is connected with the input of one-level SBD frequency tripler 3, the outfan of one-level SBD frequency tripler 3 is connected with the input of second signal amplifier 4, the outfan of second signal amplifier 4 is connected with the first input end of manipulator 5, second input of manipulator 5 accesses triangular wave, the input of the outfan of manipulator 5 and two grades of SBD frequency triplers 6 connects, the input of the outfan of two grades of SBD frequency triplers 6 and three grades of signal amplifiers 7 connects.
As shown in Figure 3, one-level SBD frequency tripler 3 and two grades of SBD frequency triplers 6 all include inductance L1, inductance L2, inductance L3, inductance L4, full wave bridge rectifier, electric capacity C1, electric capacity C2 and electric capacity C3, one end of inductance L1 is as input, the other end is connect electrically by electric capacity C1 and also is connected with inductance L2 one end by full wave bridge rectifier, the inductance L2 other end connects electrically by inductance L3, inductance L2 two ends are parallel with electric capacity C2, inductance L3 two ends and are parallel with electric capacity C3.
Full wave bridge rectifier includes diode D1, diode D2, diode D3, diode D4 and inductance L4, the anode of diode D1 is connected and as input with the negative electrode of diode D2, the anode of diode D4 is connected and as outfan with the negative electrode of diode D3, the negative electrode of diode D1 is connected with one end of the negative electrode of diode D4 and inductance L4 respectively, and the anode of diode D2 is connected with the other end of the anode of diode D3 and inductance L4 respectively.
nullAs shown in Figure 4，Manipulator 5 includes electric capacity C4、Electric capacity C5、Electric capacity C6、Double; two electricity adjust varactor VD1、Double; two electricity adjust varactor VD2、Inductance L5 and inductance L6，Positive pole and double; two electricity of double; two electricity tune varactor VD1 adjust the positive pole connection of varactor VD2 and the second input as manipulator 5，Inductance L5 one end and inductance L6 one end connect and as the Dc bias input of manipulator 5，The inductance L5 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，The inductance L6 other end adjusts the negative pole of varactor VD2 to be connected with double; two electricity，Electric capacity C4 one end is as the first input end of manipulator 5，The electric capacity C4 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，Electric capacity C5 one end is as the outfan of manipulator 5，The electric capacity C5 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，The two ends of electric capacity C6 adjust the negative pole of varactor VD1 and double; two electricity to adjust the negative pole of varactor VD2 to be connected respectively with double; two electricity.
nullAs shown in Figure 5，One stage signal amplifier 2、Second signal amplifier 4 and three grades of signal amplifiers 7 all include resistance R1、Resistance R2、Resistance R3、Electric capacity C7、Electric capacity C8、Electric capacity C9、Electric capacity C10、Inductance L7、Inductance L8、Audion Q1，Resistance R2 one end and inductance L7 one end are connected with power supply respectively，The other end of resistance R2 is connected with audion Q1 base stage，Audion Q1 base stage is connect electrically by resistance R3，The inductance L7 other end is connected with audion Q1 collector，Audion Q1 collector is connected with electric capacity C10 one end，The electric capacity C10 other end is as outfan，The two ends of inductance L7 are parallel with electric capacity C7，Audion Q1 emitter stage is connected with electric capacity C9 one end，The electric capacity C9 other end is as input，Audion Q1 emitter stage is connected with resistance R1 one end，The resistance R1 other end is connect electrically by inductance L8，Inductance L8 two ends are parallel with electric capacity C8.
According to Fig. 2 it can be seen that Low phase noise rf frequency combiner circuit includes Low phase noise crystal oscillator 1, one stage signal amplifier 2, one-level SBD frequency tripler 3, second signal amplifier 4,5, two grades of SBD frequency triplers 6 of manipulator and three grades of signal amplifiers 7.
The purpose of the technical program is to reduce phase noise, and improves output signal harmonic characteristic.It is low that SBD frequency multiplication has phase noise, the advantage that can effectively suppress even-order harmonic.But shg efficiency is low.So utilizing one stage signal amplifier 2 to amplify the 10MHz signal of crystal oscillator, then through one-level SBD frequency tripler, carrying out frequency-selecting amplification through second signal amplifier 4 after frequency multiplication, level of can being made an uproar mutually is low, the first time frequency-doubled signal that harmonic characterisitic is excellent.Manipulator, more than the phase noise of crystal oscillator, is directly placed in crystal oscillator rear class, can raise the background noise of 10MHz signal by the background phase noise of general manipulator, and rear class frequency multiplication will be directly impacted.The intrinsic phase that one-level frequency multiplication the introduces 20log (3) that makes an uproar can be utilized to weaken the noise of manipulator, be generally adopted this structure and can directly ignore the noise that manipulator introduces.Second level frequency multiplication adopts two grades of SBD frequency triplers 6, can obtain, through three grades of signal amplifiers 7, the signal that phase noise is low, harmonic characterisitic is excellent after frequency multiplication.
The schematic diagram of one-level SBD frequency tripler 3 and two grades of SBD frequency triplers 6 is as shown in Figure 3, two pairs of SBD (diode D1, diode D3 and diode D2, diode D4) form full wave bridge rectifier, with a big inductance L4 by the two of full wave bridge rectifier DC output end short circuits, when inputting signal and changing with sine wave is positive and negative, two pairs of SBD (diode D1, diode D3 and diode D2, diode D4) alternate conduction.AC signal is high resistant by big inductance L4, so when inputting signal and being sinusoidal wave, output signal is approximate square waves.
The Fourier expansion formula of square-wave signal is expressed as:
By (2) formula it can be seen that spectrum only comprises odd harmonic, therefore SBD frequency multiplication can effectively suppress the even-order harmonic of sinusoidal input signal.
Input at diode pair adds inductance L1 and electric capacity C1 and realizes power match, and the outfan at diode pair adds inductance L2, electric capacity C2 and inductance L3, electric capacity C3 realize second order bandpass filtering.
One-level SBD frequency tripler 3 incoming frequency 5～15MHz, conversion loss 10～15dB, input power 10～15dBm, harmonics restraint 15～20dB.
Two grades of SBD frequency tripler 6 incoming frequency 20～40MHz, conversion loss 10～15dB, input power 10～15dBm, harmonics restraint 15～20dB.
As shown in Figure 4, the manipulator that the present invention adopts is controlled phase-shift network, and the control end at controlled phase-shift network injects triangular wave, can realize triangular wave phase modulation (square wave frequency modulation).Controlled phase-shift network includes double; two electricity and adjusts varactor (VD1 and VD2), electric capacity C6 and inductance L5, inductance L6.Its operation principle is based on capister electric capacity and realizes the phase place change of series resonant network with bias variations.Double; two electricity modulations hold the diodes in parallel resonance phase shifter can effectively suppress or eliminate produced distortion effect in circuit, improves the non-linear of manipulator.Carrier wave is inputted by electric capacity C4 end, and electric capacity C5 end exports.
Manipulator 5 adopts controlled phase-shift network frequency range 27MHz～33MHz, phase shift range 90 °, insertion loss 1～2.5dB.
As shown in Figure 5, one-level in the present invention, two grades and third stage amplifier all adopt common-base circuit structure, select the bipolar transistor Q1 of low noise, resistance R1, resistance R2 and resistance R3 provide biasing for Q1, wherein inductance L8, electric capacity C8 reduce the loss of input signal as band elimination filter, useful signal is amplified by inductance L7, electric capacity C7 as common-base circuit frequency-selective network, and signal is inputted by electric capacity C9 end, and electric capacity C10 end exports.
One stage signal amplifier 2 frequency range 5MHz～15MHz, small-signal power gain 10dB, noise coefficient 2dB, linear power output 18dBm, maximal input 10dBm.
Second signal amplifier 4 frequency range 20MHz～40MHz, small-signal power gain>10dB, noise coefficient<2dB, linear power output>18dBm, maximal input 10dBm.
Three grades of signal amplifier 7 frequency range 80MHz～110MHz, small-signal power gain>15dB, noise coefficient<2dB, linear power output>20dBm, maximal input 13dBm.
Embodiment 2
According to Fig. 2 it can be seen that Low phase noise rf frequency combiner circuit includes the Low phase noise crystal oscillator 1, one stage signal amplifier 2, one-level SBD frequency tripler 3, second signal amplifier 4,5 two grades of SBD frequency triplers of manipulator 6 and the three grades of signal amplifiers 7 that are sequentially connected with.Design parameter is as follows.
Low phase noise crystal oscillator 1 selects the 10MHz crystal oscillator made an uproar mutually lower than-150dBc/Hz100Hz, output 5～10dBm.
As it is shown in figure 5, in the circuit of one stage signal amplifier 2.Biasing resistor R1 is 500 Ω, and resistance R2 is 10k Ω, and resistance R3 is 10k Ω.Input coupling electric capacity C9 is 200pF, and output coupling capacitor C10 is 200pF.The emitting stage inductance L8 with resistance network is 100nH, and inductance C8 is 470pF.The inductance L7 of colelctor electrode frequency-selective network is 100nH, and electric capacity C7 is 560pF.
As it is shown on figure 3, in the circuit of one-level SBD frequency tripler 3, the inductance L1 of input coupling is 220nH, and electric capacity C1 is 470pF.The inductance L4 of bridge-type chokes is 68uH.The inductance L2 of frequency multiplication output second-order filter is 560nH, and electric capacity C2 is 47pF, and inductance L3 is 330nH, and electric capacity C3 is 82pF.
As it is shown in figure 5, in the circuit of second signal amplifier 2, resistance R1 is 300 Ω, resistance R2 is 15k Ω, and resistance R3 is 18k Ω.The electric capacity C9 of input coupling is 100pF, and output coupling capacitor C10 is 100pF.Emitting stage is 100nH with the inductance L8 in resistance network, and electric capacity C8 is 220pF.The inductance L7 of colelctor electrode frequency-selective network is 100nH, and electric capacity C7 is 180pF.
As shown in Figure 4, the electric capacity C4 of manipulator 5 input coupling is 330pF, and electric capacity C5 is 330pF.Tuning coil L5 is 100nH, and inductance L6 is 100nH, and tuning capacity C6 is 82pF.
As it is shown on figure 3, in the circuit of the 2nd SBD frequency tripler, the inductance L1 of input coupling is 180nH, and electric capacity C1 is 100pF.The inductance L4 of bridge-type chokes is 33uH.The inductance L2 of frequency multiplication output second-order filter is 180nH, and electric capacity C2 is 33pF, and inductance L3 is 82nH, and electric capacity C3 is 120pF.
As it is shown in figure 5, in the circuit of three grades of signal amplifiers 2, resistance R1 is 200 Ω, resistance R2 is 12k Ω, and resistance R3 is 15k Ω.The electric capacity C9 of input coupling is 300pF, and output coupling capacitor C10 is 100pF.Emitting stage is 100nH with the inductance L8 in resistance network, and electric capacity C8 is 82pF.The inductance L7 of colelctor electrode frequency-selective network is 100nH, and electric capacity C7 is 56pF.
Adopting the 90MHz power that the technical scheme of above-mentioned parameter obtains is 18dBm, and second harmonic suppresses to be-53dB, and second harmonic rejection ratio legacy frequencies synthetic schemes reduces 21dB.
Table 1 two schemes power and harmonic contrast
| 90MHz power | Second harmonic | |
| Low noise frequency synthesis scheme | 18dBm | -53dB |
| Legacy frequencies synthetic schemes | 18dBm | -32dB |
The 90MHz signal phase noise that the technical scheme of above-mentioned parameter obtains is adopted to reduce more than 10dB at offset carrier 272Hz～100kHz scope internal ratio traditional scheme.
Table 2 two schemes 90MHz signal phase noise vs
| 100Hz | 272Hz | 1kHz | 10kHz | 100kHz | |
| Low noise scheme | -130dBc/Hz | -138dBc/Hz | -143dBc/Hz | -146dBc/Hz | -148dBc/Hz |
| Traditional scheme | -126dBc/Hz | -128dBc/Hz | -129dBc/Hz | -130dBc/Hz | -130dBc/Hz |
Adopting the Rb atom frequency marking that the rf frequency combiner circuit that this invention describes makes, frequency stability index enters 10-13Magnitude.
Embodiment described above is only that the purpose of the present invention is done a good illustration, is not limiting as the present invention.Described embodiment, in line with the spirit of this invention and principle, is made suitable amendment or supplements or adopt similar method to substitute, should be included within protection scope of the present invention by those skilled in the art.
Claims (5)
1. low phase noise rf frequency combiner circuit, including Low phase noise crystal oscillator (1), it is characterized in that, Low phase noise crystal oscillator (1) is connected with the input of one stage signal amplifier (2), the outfan of one stage signal amplifier (2) is connected with the input of one-level SBD frequency tripler (3), the outfan of one-level SBD frequency tripler (3) is connected with the input of second signal amplifier (4), the outfan of second signal amplifier (4) is connected with the first input end of manipulator (5), second input of manipulator (5) accesses triangular wave, the outfan of manipulator (5) and the input of two grades of SBD frequency triplers (6) connect, the outfan of two grades of SBD frequency triplers (6) and the input of three grades of signal amplifiers (7) connect.
2. low phase noise rf frequency combiner circuit according to claim 1, it is characterized in that, described one-level SBD frequency tripler (3) and two grades of SBD frequency triplers (6) all include inductance L1, inductance L2, inductance L3, inductance L4, full wave bridge rectifier, electric capacity C1, electric capacity C2 and electric capacity C3, one end of inductance L1 is as input, the other end is connect electrically by electric capacity C1 and also is connected with inductance L2 one end by full wave bridge rectifier, the inductance L2 other end connects electrically by inductance L3, inductance L2 two ends are parallel with electric capacity C2, inductance L3 two ends are parallel with electric capacity C3.
3. low phase noise rf frequency combiner circuit according to claim 2, it is characterized in that, described full wave bridge rectifier includes diode D1, diode D2, diode D3, diode D4 and inductance L4, the anode of diode D1 is connected and as input with the negative electrode of diode D2, the anode of diode D4 is connected and as outfan with the negative electrode of diode D3, the negative electrode of diode D1 is connected with one end of the negative electrode of diode D4 and inductance L4 respectively, and the anode of diode D2 is connected with the other end of the anode of diode D3 and inductance L4 respectively.
null4. low phase noise rf frequency combiner circuit according to claim 1，It is characterized in that，Described manipulator (5) includes electric capacity C4、Electric capacity C5、Electric capacity C6、Double; two electricity adjust varactor VD1、Double; two electricity adjust varactor VD2、Inductance L5 and inductance L6，Positive pole and double; two electricity of double; two electricity tune varactor VD1 adjust the positive pole connection of varactor VD2 and the second input as manipulator (5)，Inductance L5 one end and inductance L6 one end connect and as the Dc bias input of manipulator (5)，The inductance L5 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，The inductance L6 other end adjusts the negative pole of varactor VD2 to be connected with double; two electricity，Electric capacity C4 one end is as the first input end of manipulator (5)，The electric capacity C4 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，Electric capacity C5 one end is as the outfan of manipulator (5)，The electric capacity C5 other end adjusts the negative pole of varactor VD1 to be connected with double; two electricity，The two ends of electric capacity C6 adjust the negative pole of varactor VD1 and double; two electricity to adjust the negative pole of varactor VD2 to be connected respectively with double; two electricity.
null5. low phase noise rf frequency combiner circuit according to claim 1，It is characterized in that，Described one stage signal amplifier (2)、Second signal amplifier (4) and three grades of signal amplifiers (7) all include resistance R1、Resistance R2、Resistance R3、Electric capacity C7、Electric capacity C8、Electric capacity C9、Electric capacity C10、Inductance L7、Inductance L8、Audion Q1，Resistance R2 one end and inductance L7 one end are connected with power supply respectively，The other end of resistance R2 is connected with audion Q1 base stage，Audion Q1 base stage is connect electrically by resistance R3，The inductance L7 other end is connected with audion Q1 collector，Audion Q1 collector is connected with electric capacity C10 one end，The electric capacity C10 other end is as outfan，The two ends of inductance L7 are parallel with electric capacity C7，Audion Q1 emitter stage is connected with electric capacity C9 one end，The electric capacity C9 other end is as input，Audion Q1 emitter stage is connected with resistance R1 one end，The resistance R1 other end is connect electrically by inductance L8，Inductance L8 two ends are parallel with electric capacity C8.
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| CN111049496A (en) * | 2019-12-17 | 2020-04-21 | 北京无线电计量测试研究所 | Small differential temperature compensation crystal oscillator |
| CN112671345A (en) * | 2020-12-16 | 2021-04-16 | 宁波铼微半导体有限公司 | Signal processing module, gallium nitride frequency tripling circuit and circuit design method |
| CN114609440A (en) * | 2022-05-11 | 2022-06-10 | 北京神州安付科技股份有限公司 | Non-contact RTC crystal oscillator detection device |
| CN115955196A (en) * | 2023-03-14 | 2023-04-11 | 成都世源频控技术股份有限公司 | High-performance low-noise crystal oscillator circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090289728A1 (en) * | 2008-05-23 | 2009-11-26 | Accubeat Ltd. | Atomic frequency standard based on phase detection |
| CN102769462A (en) * | 2011-05-06 | 2012-11-07 | 成都天奥电子股份有限公司 | Direct digital frequency phase-locked frequency multiplier circuit |
| CN103326718A (en) * | 2013-05-23 | 2013-09-25 | 中国科学院武汉物理与数学研究所 | Radio frequency chain of rubidium frequency scale |
| US20140139294A1 (en) * | 2012-11-21 | 2014-05-22 | Ricoh Company, Ltd. | Alkali metal cell, atomic oscillator, and alkali metal cell fabricating method |
-
2016
- 2016-03-31 CN CN201610195107.5A patent/CN105763190B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090289728A1 (en) * | 2008-05-23 | 2009-11-26 | Accubeat Ltd. | Atomic frequency standard based on phase detection |
| CN102769462A (en) * | 2011-05-06 | 2012-11-07 | 成都天奥电子股份有限公司 | Direct digital frequency phase-locked frequency multiplier circuit |
| US20140139294A1 (en) * | 2012-11-21 | 2014-05-22 | Ricoh Company, Ltd. | Alkali metal cell, atomic oscillator, and alkali metal cell fabricating method |
| CN103326718A (en) * | 2013-05-23 | 2013-09-25 | 中国科学院武汉物理与数学研究所 | Radio frequency chain of rubidium frequency scale |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107395200A (en) * | 2017-08-22 | 2017-11-24 | 中国科学院武汉物理与数学研究所 | A kind of ultra-low noise frequency synthesis and Frequency Transfer circuit for rubidium frequency standard |
| CN107395200B (en) * | 2017-08-22 | 2023-11-10 | 中国科学院精密测量科学与技术创新研究院 | Ultra-low noise frequency synthesis and frequency transfer circuit for rubidium frequency standard |
| CN111049496A (en) * | 2019-12-17 | 2020-04-21 | 北京无线电计量测试研究所 | Small differential temperature compensation crystal oscillator |
| CN112671345A (en) * | 2020-12-16 | 2021-04-16 | 宁波铼微半导体有限公司 | Signal processing module, gallium nitride frequency tripling circuit and circuit design method |
| CN114609440A (en) * | 2022-05-11 | 2022-06-10 | 北京神州安付科技股份有限公司 | Non-contact RTC crystal oscillator detection device |
| CN115955196A (en) * | 2023-03-14 | 2023-04-11 | 成都世源频控技术股份有限公司 | High-performance low-noise crystal oscillator circuit |
| CN115955196B (en) * | 2023-03-14 | 2023-05-30 | 成都世源频控技术股份有限公司 | High-performance low-noise crystal oscillator circuit |
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