CN208063143U - 1-2GHz wideband low noise amplifiers - Google Patents

1-2GHz wideband low noise amplifiers Download PDF

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Publication number
CN208063143U
CN208063143U CN201820599315.6U CN201820599315U CN208063143U CN 208063143 U CN208063143 U CN 208063143U CN 201820599315 U CN201820599315 U CN 201820599315U CN 208063143 U CN208063143 U CN 208063143U
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China
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triode
level
circuit
grid
order
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CN201820599315.6U
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Inventor
何稀
黄军恒
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Hefei Silicon Valley Microelectronics Co ltd
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Hefei Ic Valley Microelectronics Co Ltd
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Abstract

The utility model is related to low-noise amplifier technical fields, in particular 1-2GHz wideband low noise amplifiers, circuit includes dual-stage amplifier, first order triode drain connects second level triode grid by intervalve matching circuit, the first order, second level triode source electrode connects DC feedback resistance, decoupling capacitor is connect on DC feedback resistance, first order triode grid connects sequentially connected microstrip line, choke induction and capacitance form resonance circuit, second level triode grid connects bias voltage by big resistance, inductance is connected between second level triode grid and drain electrode, capacitance constitutes negative-feedback circuit, second level triode drain electrode is connected to bias voltage by choke induction.The utility model, using enhanced technological design, device is powered using single supply, by the way that feedback resistance steady operation electric current is added in source level, has been reasonably selected size, the working condition of triode, has been optimized match circuit, had the advantages that low current, low noise.

Description

1-2GHz wideband low noise amplifiers
Technical field
The utility model is related to low-noise amplifier technical fields, specially 1-2GHz wideband low noise amplifiers.
Background technology
Traditional low noise amplifier circuit is made of depletion type technique, and depletion type technique needs to provide negative pressure biasing, increases The complexity of application is added.Enhanced technique is a kind of novel process of later exploitation, compared with depletion type technique, has noise Low, high gain is not required to the advantages that negative pressure biasing, but also has technological fluctuation larger, the poor disadvantage of consistency.
Utility model content
The purpose of this utility model is to provide 1-2GHz wideband low noise amplifiers, to solve to carry in above-mentioned background technology The problem of going out.The 1-2GHz wideband low noise amplifiers circuit is compared with traditional low-noise amplifier, hence it is evident that reduces and makes an uproar Sonic system number.
To achieve the above object, the utility model provides the following technical solutions:
1-2GHz wideband low noise amplifiers, circuit include dual-stage amplifier, and every grade of amplifier includes triode, the first order Triode drain connects second level triode grid by intervalve matching circuit, and the first order, second level triode source electrode connect directly Flow feedback resistance, connect decoupling capacitor on DC feedback resistance, first order triode grid connect sequentially connected microstrip line, Choke induction and capacitance form resonance circuit, and second level triode grid connects bias voltage, three pole of the second level by big resistance Connection inductance, capacitance constitute negative-feedback circuit between tube grid and drain electrode, and triode drain electrode in the second level is connected by choke induction To bias voltage.
Preferably, first order amplifier selects wide grid width triode, second level amplifier to use narrow grid width triode.
Preferably, first order triode grid width 150um, second level triode grid width 100um.
Compared with prior art, the utility model has the beneficial effects that:Using enhanced technological design, circuit includes two-stage Amplifier, and by the way that feedback resistance steady operation electric current is added in source level, improve the consistency of product;In order to simplify circuit knot Structure, the triode of dual-stage amplifier is connected after not matching respectively, but shares intervalve matching circuit.
Size, the working condition for having reasonably selected triode, optimize match circuit.
The amplifier circuit in low noise compared with traditional low-noise amplifier, have with wide, standing wave is low, high gain, The advantages that noise is low and operating current is small, hence it is evident that reduce noise coefficient.
Description of the drawings
Fig. 1 is the utility model electrical block diagram;
Fig. 2 is gain and the gain flatness test chart of the utility model circuit;
Fig. 3 is the noise coefficient test chart of the utility model circuit;
Fig. 4 is the input reflection coefficient test chart of the utility model circuit;
Fig. 5 is the output reflection coefficient test chart of the utility model circuit.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work The every other embodiment obtained, shall fall within the protection scope of the present invention.
Referring to Fig. 1, the utility model provides technical solution:
1-2GHz wideband low noise amplifiers, it all includes a triode that circuit, which uses dual-stage amplifier, every grade of amplifier, It is Q for convenience of narration first order triode1, second level triode be Q2, the source level of every grade of amplifier triode all adds direct current Feedback resistance, such as R4、R8It is shown, resistance R4、R8Correspondence meets decoupling capacitor C5、C10, when technique fluctuates, the electric current of triode When changing, a feedback voltage can be generated on feedback resistance, to the variation of cancellation current.Radiofrequency signal is through input With circuit RFin、Q1Amplification, intervalve matching circuit (including capacitance C7And the inductance L of its connection4)、Q2Amplification, output matching electricity RF behind roadOUTPlace's output.In terms of matching, bandwidth has been widened by the resonance between inductance and capacitance and microstrip line.
The utility model is further described below in conjunction with Fig. 1:
1, the input of amplifier matches mainly to noise matching, takes into account standing wave.
2、C1-C11For blocking, decoupling capacitor, L1-L3、L6It for choke induction, is realized by planar spiral inductor, other electricity It is matching device to hold inductance.R1-R9Partial pressure provides bias voltage.
3, for the electric current stablizing effect obtained, R2、R1、R7、R9On pressure drop be sufficiently large, i.e., should compare process drift Big several times.
4, in order to obtain better bandwidth, L2、L1And C1With TL1Form resonance circuit;L5With C9With Q2Constitute negative-feedback Circuit.
5, the indexs such as noise, bandwidth, gain and power are taken into account, Q is chosen1Grid width 150um, Q2Grid width 100um.
According to the circuit structure of Fig. 1, after selecting appropriate matching, the practical survey of the 1-2GHz wideband low noise amplifiers of design Test result is referring to Fig. 2-5.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is appreciated that can these embodiments be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaiied Change, replace and modification, the scope of the utility model are defined by the appended claims and the equivalents thereof.

Claims (3)

1.1-2GHz wideband low noise amplifiers, it is characterised in that:Circuit includes dual-stage amplifier, and every grade of amplifier includes three poles Pipe, first order triode drain connect second level triode grid, the first order, second level triode source by intervalve matching circuit DC feedback resistance is extremely connect, decoupling capacitor is connect on DC feedback resistance, the connection of first order triode grid is sequentially connected Microstrip line, choke induction and capacitance form resonance circuit, second level triode grid connects bias voltage by big resistance, the Connection inductance, capacitance constitute negative-feedback circuit between diode & transistor grid and drain electrode, and triode drain electrode in the second level passes through chokes Inductance connection is to bias voltage.
2. 1-2GHz wideband low noise amplifiers according to claim 1, it is characterised in that:First order amplifier is selected wide Grid width triode, second level amplifier use narrow grid width triode.
3. 1-2GHz wideband low noise amplifiers according to claim 1, it is characterised in that:First order triode grid width 150um, second level triode grid width 100um.
CN201820599315.6U 2018-04-25 2018-04-25 1-2GHz wideband low noise amplifiers Active CN208063143U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201820599315.6U CN208063143U (en) 2018-04-25 2018-04-25 1-2GHz wideband low noise amplifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201820599315.6U CN208063143U (en) 2018-04-25 2018-04-25 1-2GHz wideband low noise amplifiers

Publications (1)

Publication Number Publication Date
CN208063143U true CN208063143U (en) 2018-11-06

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113595514A (en) * 2021-06-21 2021-11-02 北京无线电测量研究所 Amplifying circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113595514A (en) * 2021-06-21 2021-11-02 北京无线电测量研究所 Amplifying circuit

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Address after: 230088 building e, Anhui scientific and technological achievements transformation demonstration base, No. 425, Chuangxin Avenue, high tech Zone, Hefei, Anhui

Patentee after: Hefei Silicon Valley Microelectronics Co.,Ltd.

Address before: Room 1001-1002, F1 building, phase II, innovation industrial park, 2800 innovation Avenue, high tech Zone, Hefei City, Anhui Province, 230088

Patentee before: HEFEI IC VALLEY MICROELECTRONICS Co.,Ltd.

CP03 Change of name, title or address