CN105762266B - A kind of light emitting diode and preparation method thereof with heat-conducting layer - Google Patents
A kind of light emitting diode and preparation method thereof with heat-conducting layer Download PDFInfo
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- CN105762266B CN105762266B CN201610269510.8A CN201610269510A CN105762266B CN 105762266 B CN105762266 B CN 105762266B CN 201610269510 A CN201610269510 A CN 201610269510A CN 105762266 B CN105762266 B CN 105762266B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The invention belongs to technical field of semiconductors, more particularly to a kind of light emitting diode and preparation method thereof with heat-conducting layer, including at least a substrate, and it is sequentially located at N-type layer, luminescent layer and P-type layer on substrate, by be inserted between substrate and epitaxial layer an aln layer and graphene particles layer it is alternately laminated made of heat-conducting layer, when heat dissipation problem of non-uniform and large-size epitaxial wafer when reducing the injection of existing LED current are grown due to the uniformly caused warpage issues that radiate.
Description
Technical field
The invention belongs to technical field of semiconductors more particularly to a kind of with the light emitting diode of heat-conducting layer and its preparation side
Method.
Background technique
Light emitting diode（English is Light Emitting Diode, abbreviation LED）It is a kind of solid-state semiconductor luminous two
Pole pipe device is widely used in the lighting areas such as indicator light, display screen.As LED light emitting diode market competition is growing more intense,
The product that high brightness is obtained under conditions of reducing production cost becomes the requirement of light emitting diode industry batch production technique certainty.
It is sequentially depositing N-type layer, luminescent layer thereon mainly using sapphire as substrate in light emitting diode preparation process at present
And P-type layer, because chemical stability is good, moderate, mature preparation process due to be widely used, but thermal conductivity of its difference
It is not obvious under the work of device low current, but very prominent in power-type device high current Problems, for example, because of heat dissipation
Light efficiency caused by bad and performance decline, service life reduction etc.；Meanwhile with the increase of Sapphire Substrate size, because of thermal mismatching
And the warpage generated is gradually increased, and seriously affects die terminals process rate.
Summary of the invention
In view of the above-mentioned problems, a kind of light emitting diode with heat-conducting layer, includes at least a substrate, and be sequentially located at substrate
On N-type layer, luminescent layer and P-type layer, it is characterised in that：A heat-conducting layer is inserted between the substrate and N-type layer, it is described thermally conductive
Layer is made of periodically alternately stacked aln layer with graphene particles layer.
Preferably, increasing or decreasing changes the particle coverage of graphene particles layer from bottom to up in the heat-conducting layer.
Preferably, the particle of the thickness changing trend of aln layer and the graphene particles layer covers in the heat-conducting layer
Rate variation tendency is consistent.
Preferably, the particle size of the graphene particles layer is 5 ~ 1000.
Preferably, the particle coverage variation range of the graphene particles layer is 10% ~ 80%.
Preferably, the aln layer with a thickness of 15 ~ 50.
Preferably, the aln layer and graphene particles layer alternately stacked period are 2 ~ 15.
It preferably, further include a buffer layer between the heat-conducting layer and the N-type layer.
The present invention also provides a kind of preparation methods of light emitting diode with heat-conducting layer, include at least following steps：
One substrate is provided；
In being sequentially depositing N-type layer, luminescent layer and P-type layer on the substrate；
It is characterized in that：Before depositing the N-type layer, further include the steps that in depositing a heat-conducting layer on the substrate,
Specially：
1）In depositing an aln layer on substrate；
2）In covering a graphene particles layer on the aln layer；
3）Repeat the above steps 1）~2）Repeatedly, it is formed by periodically alternately stacked aln layer and graphene particles layer
The heat-conducting layer of composition.
It preferably, further include the deposition step of a buffer layer between the heat-conducting layer and the deposition step of N-type layer.
Preferably, the step 1）~2）It repeats 2 ~ 15 times.
The present invention at least has beneficial effect below：
Heat-conducting layer in the present invention is made of periodically alternately stacked aln layer with graphene particles layer, due to graphite
Alkene stratum granulosum has preferable thermal conductivity, therefore compared with common aln layer, the heat-conducting layer can make temperature from substrate
Speed when epitaxial layers are conducted faster, so that the instantaneous local temperature of substrate can accordingly decline, is given birth to so as to reduce extension
Angularity in growth process, so that the uniformity of epitaxial layer is more preferable；Meanwhile because heat dissipation is unevenly led when reducing device work
The local temperature of cause is excessively high, and then the decline of caused light efficiency and performance and the reduction of service life.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with present invention reality
It applies example to be used to explain the present invention together, not be construed as limiting the invention.
Fig. 1 is the light emitting diode construction schematic diagram with heat-conducting layer of the specific embodiment of the invention.
Fig. 2 is the graphene particles schematic diagram of a layer structure of the specific embodiment of the invention.
Fig. 3 is the light emitting diode preparation flow figure with heat-conducting layer of the specific embodiment of the invention.
Fig. 4 is the preparation flow figure for the heat-conducting layer that the present invention has embodiment.
It is marked in figure：100：Substrate；200：Heat-conducting layer；210：Aln layer；220：Graphene particles layer；221：Particle；
300：Epitaxial layer；310：N-type layer；320：Luminescent layer；330：P-type layer；400：Buffer layer.
Specific embodiment
The embodiment of the present invention is described in detail below in conjunction with attached drawing, but the present invention can be limited according to claim
Fixed and covering multitude of different ways is implemented.
Referring to attached drawing 1, the present invention proposes a kind of light emitting diode with heat-conducting layer 200, includes at least：One substrate
100 and the epitaxial layer 300 that forms of the N-type layer 310, luminescent layer 320 and the P-type layer 330 that are sequentially located on substrate 100, this shines
Diode further includes that a heat-conducting layer 200 is inserted between substrate 100 and N-type layer 310, further includes one positioned at heat-conducting layer 200 and N-type
Buffer layer 400 between layer 310.Wherein, the substrate 100 is Sapphire Substrate or silicon carbide substrates or silicon substrate.N-type
Layer 310 includes high temperature GaN buffer layer and n-GaN layers（It is not shown in figure）；Luminescent layer 320 is by InGaN well layer and GaN barrier layer（Figure
In do not show）Periodic layer is stacked, and periodicity is 4 ~ 12；P-type layer 330 is p-type GaN；Buffer layer 400 is nitridation aluminium
Material, promotes the lattice quality of epitaxial layer.P-type dopant can be selected from least one of Be, Mg, Ca, Sr, Ba, N type dopant
It can be selected from least one of Si, Ge, Sn, Pb.
With continued reference to attached drawing 1, heat-conducting layer 200 provided by the present invention by periodically alternately stacked aln layer 210 with
Graphene particles layer 220 forms, and specifically, in heat-conducting layer 200, aln layer 210 is alternately laminated with graphene particles layer 220
Periodicity be 2 ~ 15.Meanwhile being the gradually heat sinking function of realization bottom, the particle of graphene particles layer 220 in heat-conducting layer 200
Coverage rate is incremented by from bottom to up or variation of successively decreasing, meanwhile, for the interface for improving aln layer 210 and graphene particles layer 220
Incompatibility obtains the aln layer 210 of high quality, the covering of particle 221 of thickness changing trend and graphene particles layer 220
Rate variation tendency is consistent, and reduces substrate 100 in the interface incompatibility with graphene particles layer 220.Certainly, heat-conducting layer
The particle 221 of graphene particles layer 220 in 200（Such as attached drawing 2）Coverage rate is incremented by from bottom to up or variation of successively decreasing, and device is made to exist
When working under high current, reduce the influence that cannot be shed in time by amount of heat to device photoelectric performance and light extraction efficiency, improves
The service life of device.
The present embodiment, 221 coverage rate of particle of graphene particles layer 220 is incremented by successively from bottom to up preferably in heat-conducting layer,
Meanwhile the thickness of aln layer 210 also successively increases from bottom to up, in epitaxial process, keeps temperature outside from substrate 100
Prolong speed when layer 300 conducts faster, it is raw so as to reduce extension so that the instantaneous local temperature of substrate 100 accordingly declines
Angularity in growth process improves the uniformity of epitaxial wafer photoelectric properties and the yields of die terminals processing procedure；Wherein, aln layer
210 with a thickness of 15 ~ 50；For the particle 210 of graphene particles layer 220 having a size of 5 ~ 1000, coverage rate is 10% ~ 80%.
Referring to attached drawing 3, the present invention also provides a kind of preparation methods of light emitting diode with heat-conducting layer 200, at least wrap
It includes：A substrate 100 is provided, in preparing heat-conducting layer 200 on substrate, then in deposit epitaxial layers 300, epitaxial layer on heat-conducting layer 200
300 include N-type 310, luminescent layer 320 and p-type 330.Wherein, referring to attached drawing 4, the specific preparation process of the heat-conducting layer 200 is such as
Under：
1）In depositing an aln layer 210 on substrate 100；
2）In covering a graphene particles layer 220 on the aln layer 210；
3）Repeat the above steps 1）~2）Repeatedly, the aln layer 210 and graphene particles layer by being periodically laminated are formed
The heat-conducting layer 200 of 220 compositions.
Wherein, aln layer 210 and the alternately laminated periodicity of graphene particles layer 220 are 2 ~ 15, meanwhile, further to change
Kind heat-conducting layer 200 and 300 interface inconsistent problem of epitaxial layer, the light emitting diode further includes in heat-conducting layer 200 and epitaxial layer
Between the step of depositing buffer layer 400, buffer layer 400 is the aluminium nitride of physical vaporous deposition deposition.
The aln layer 210 provided by the invention being periodically laminated and graphene particles layer 220 have preferable thermal conductivity,
Speed when temperature can be made to conduct from 100 epitaxial layers 300 of substrate faster, the instantaneous local temperature of substrate 100 can it is corresponding under
On the one hand drop reduces reduction angularity when epitaxial growth, so that the uniformity of epitaxial layer 300 is more preferable.Meanwhile device exists
When working under high current, since graphene particles layer 220 has excellent thermal conductivity in heat-conducting layer 200, when reducing device work
Because radiate it is uneven caused by local temperature it is excessively high, and then the decline of caused light efficiency and performance and the reduction of service life.Separately
Outer graphene particles layer 220 has preferable translucency, light is hardly picked up, so the meeting compared with simple aln layer 210
Increase light extraction efficiency.
It should be understood that above-mentioned specific embodiment is merely a preferred embodiment of the present invention, the present invention is not played
Any restrictions effect.Any person of ordinary skill in the field, in the range of not departing from technical solution of the present invention, to this
It invents the technical solution disclosed and technology contents makes the variation such as any type of equivalent replacement or modification, belong to without departing from this hair
The content of bright technical solution, still belongs within protection scope of the present invention.
Claims (10)
1. a kind of light emitting diode with heat-conducting layer, include at least a substrate, and be sequentially located on substrate N-type layer, shine
Layer and P-type layer, it is characterised in that：A heat-conducting layer is inserted between the substrate and N-type layer, the heat-conducting layer is by periodically replacing
The aln layer of stacking and graphene particles layer form, and the particle coverage of graphene particles layer is from bottom to up in the heat-conducting layer
Increasing or decreasing variation.
2. a kind of light emitting diode with heat-conducting layer according to claim 1, it is characterised in that：Nitrogen in the heat-conducting layer
The particle coverage variation tendency for changing the thickness changing trend and the graphene particles layer of aluminium layer is consistent.
3. a kind of light emitting diode with heat-conducting layer according to claim 1, it is characterised in that：The graphene particles
The particle size of layer is 5 ~ 1000.
4. a kind of light emitting diode with heat-conducting layer according to claim 1, it is characterised in that：The graphene particles
The particle coverage variation range of layer is 10% ~ 80%.
5. a kind of light emitting diode with heat-conducting layer according to claim 1, it is characterised in that：The aln layer
With a thickness of 15 ~ 50.
6. a kind of light emitting diode with heat-conducting layer according to claim 1, it is characterised in that：The aln layer with
The alternately stacked periodicity of graphene particles layer is 2 ~ 15.
7. a kind of light emitting diode with heat-conducting layer according to claim 1, it is characterised in that：The heat-conducting layer and institute
Stating between N-type layer further includes a buffer layer.
8. a kind of preparation method of the light emitting diode with heat-conducting layer includes at least following steps：
One substrate is provided；
In being sequentially depositing N-type layer, luminescent layer and P-type layer on the substrate；
It is characterized in that：Before depositing the N-type layer, further include the steps that in depositing a heat-conducting layer on the substrate, specifically
For：
1）In depositing an aln layer on substrate；
2）In covering a graphene particles layer on the aln layer；
3）Repeat the above steps 1）~2）Repeatedly, it is formed and is made of periodically alternately stacked aln layer and graphene particles layer
Heat-conducting layer, increasing or decreasing changes the particle coverage of graphene particles layer from bottom to up in the heat-conducting layer.
9. a kind of preparation method of light emitting diode with heat-conducting layer according to claim 8, it is characterised in that：It is described
Further include the steps that depositing a buffer layer between heat-conducting layer and the deposition step of N-type layer.
10. a kind of preparation method of light emitting diode with heat-conducting layer according to claim 8, it is characterised in that：Institute
State step 1）~2）It repeats 2 ~ 15 times.
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| CN106340575A (en) * | 2016-11-22 | 2017-01-18 | 芜湖德豪润达光电科技有限公司 | Gallium-nitride-based photoelectric device epitaxial structure having graphene layer and preparation method thereof |
| CN109411579B (en) * | 2018-01-06 | 2020-08-07 | 临沂金霖电子有限公司 | Semiconductor device with graphene structure and preparation method thereof |
| JP6768205B2 (en) * | 2018-05-24 | 2020-10-14 | カシオ計算機株式会社 | Light source device and projection device |
| CN111613698B (en) * | 2020-05-22 | 2020-12-01 | 山西穿越光电科技有限责任公司 | Graphene intercalation III-group nitride semiconductor composite film and preparation method thereof |
| CN114005902B (en) * | 2021-11-05 | 2023-08-22 | 电子科技大学中山学院 | Inverted multi-junction solar cell based on GaAs substrate |
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| CN101212008A (en) * | 2006-12-29 | 2008-07-02 | 台达电子工业股份有限公司 | Electroluminescent device and method for production thereof |
| JP2015015321A (en) * | 2013-07-03 | 2015-01-22 | 高槻電器工業株式会社 | Semiconductor light-emitting element and method of manufacturing the same |
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| CN103066195A (en) * | 2013-01-25 | 2013-04-24 | 中国科学院半导体研究所 | Inverted light emitting diode using graphene as thermal conductive layer |
| CN103346225A (en) * | 2013-06-21 | 2013-10-09 | 杭州格蓝丰纳米科技有限公司 | Vertical type graphene LED chip |
| CN105261695B (en) * | 2015-11-06 | 2018-12-14 | 天津三安光电有限公司 | A kind of bonding structure for III-V compound device |
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| CN101212008A (en) * | 2006-12-29 | 2008-07-02 | 台达电子工业股份有限公司 | Electroluminescent device and method for production thereof |
| JP2015015321A (en) * | 2013-07-03 | 2015-01-22 | 高槻電器工業株式会社 | Semiconductor light-emitting element and method of manufacturing the same |
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