CN105762266A - Light-emitting diode having heat conducting layer and preparation method thereof - Google Patents
Light-emitting diode having heat conducting layer and preparation method thereof Download PDFInfo
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- CN105762266A CN105762266A CN201610269510.8A CN201610269510A CN105762266A CN 105762266 A CN105762266 A CN 105762266A CN 201610269510 A CN201610269510 A CN 201610269510A CN 105762266 A CN105762266 A CN 105762266A
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- layer
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- conducting layer
- emitting diode
- light emitting
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims abstract description 15
- 210000000498 stratum granulosum Anatomy 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 13
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 abstract description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention, which belongs to the field of the semiconductor technology, especially relates to a light-emitting diode having a heat conducting layer and a preparation method thereof. The light-emitting diode at least comprises a substrate, an N type layer, a light emitting layer and a P type layer, wherein the N type layer, the light emitting layer and the P type layer are arranged on the substrate successively. And a heat conducting layer formed by alternate lamination of aluminium nitride layers and graphene particle layers is inserted between the substrate and an epitaxial layer. Therefore, problems that heat dissipation can not be carried out uniformly during current injection into the existing light-emitting diode and a warping phenomenon occurs due to uniform heat dissipation during large-size epitaxial wafer growth can be solved.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of light emitting diode with heat-conducting layer and preparation method thereof.
Background technology
Light emitting diode (English is Light Emitting Diode, is called for short LED) is a kind of solid-state semiconductor LED device, is widely used in the lighting field such as indicator lamp, display screen.Along with LED light emitting diode market competition is growing more intense, the product obtaining high brightness under conditions of reducing production cost becomes the requirement that light emitting diode industry batch production technique is inevitable.
Main with sapphire as substrate in light emitting diode preparation process at present, it is sequentially depositing N-type layer, luminescent layer and P-type layer thereon, its because chemical stability is good, moderate, mature preparation process and be widely used, but its difference thermal conductivity device small area analysis work under and inconspicuous, but problem is the most prominent in the big current work of power-type device, such as, because of the bad light efficiency caused and hydraulic performance decline, the service life reduction etc. of dispelling the heat；Meanwhile, along with the increase of Sapphire Substrate size, its warpage produced because of thermal mismatching is gradually increased, and has a strong impact on die terminals process rate.
Summary of the invention
For the problems referred to above, a kind of light emitting diode with heat-conducting layer, at least include a substrate, and N-type layer, luminescent layer and the P-type layer being sequentially located on substrate, it is characterized in that: insert a heat-conducting layer between described substrate and N-type layer, described heat-conducting layer is made up of with Graphene stratum granulosum the most alternately laminated aln layer.
Preferably, the particle coverage increasing or decreasing from bottom to up change of Graphene stratum granulosum in described heat-conducting layer.
Preferably, in described heat-conducting layer, the thickness changing trend of aln layer keeps consistent with the particle coverage variation tendency of described Graphene stratum granulosum.
Preferably, the particle size of described Graphene stratum granulosum is 5 ~ 1000.
Preferably, the particle coverage excursion of described Graphene stratum granulosum is 10% ~ 80%.
Preferably, the thickness of described aln layer is 15 ~ 50.
Preferably, the cycle that described aln layer is alternately laminated with Graphene stratum granulosum is 2 ~ 15.
Preferably, a cushion is also included between described heat-conducting layer and described N-type layer.
The present invention also provides for the preparation method of a kind of light emitting diode with heat-conducting layer, at least comprises the steps:
One substrate is provided；
N-type layer, luminescent layer and P-type layer it is sequentially depositing on described substrate；
It is characterized in that: before depositing described N-type layer, be also included in the step depositing a heat-conducting layer on described substrate, particularly as follows:
1) on substrate, an aln layer is deposited；
2) on described aln layer, a Graphene stratum granulosum is covered；
3) repeat the above steps 1) ~ 2) repeatedly, form the heat-conducting layer being made up of the most alternately laminated aln layer and Graphene stratum granulosum.
Preferably, the deposition step of a cushion is also included between described heat-conducting layer and the deposition step of N-type layer.
Preferably, described step 1) ~ 2) repeat 2 ~ 15 times.
The present invention at least has a following beneficial effect:
Heat-conducting layer in the present invention is made up of with Graphene stratum granulosum the most alternately laminated aln layer, owing to Graphene stratum granulosum has preferable thermal conductivity, therefore compared with conventional aln layer, described heat-conducting layer can make temperature speed when substrate epitaxial layers is conducted faster, the instantaneous local temperature making substrate can decline accordingly, such that it is able to the angularity in reduction epitaxial process, and then make the uniformity of epitaxial layer more preferable；Meanwhile, too high because of the uneven local temperature caused of dispelling the heat when reducing device work, and then the light efficiency that causes and the decline of performance, and the reduction in service life.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of specification, is used for explaining the present invention, is not intended that limitation of the present invention together with the embodiment of the present invention.
Fig. 1 is the light emitting diode construction schematic diagram with heat-conducting layer of the specific embodiment of the invention.
Fig. 2 is the Graphene stratum granulosum structural representation of the specific embodiment of the invention.
Fig. 3 is the light emitting diode preparation flow figure with heat-conducting layer of the specific embodiment of the invention.
Fig. 4 is the preparation flow figure that the present invention has the heat-conducting layer of embodiment.
Figure marks: 100: substrate；200: heat-conducting layer；210: aln layer；220: Graphene stratum granulosum；221: particle；300: epitaxial layer；310:N type layer；320: luminescent layer；330:P type layer；400: cushion.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the multitude of different ways that the present invention can limit according to claim and cover is implemented.
Referring to accompanying drawing 1, the present invention proposes a kind of light emitting diode with heat-conducting layer 200, it at least includes: a substrate 100 and the N-type layer 310 being sequentially located on substrate 100, luminescent layer 320 and the epitaxial layer 300 of P-type layer 330 composition, this light emitting diode is also included between substrate 100 and N-type layer 310 and inserts a heat-conducting layer 200, also includes a cushion 400 between heat-conducting layer 200 and N-type layer 310.Wherein, described substrate 100 is Sapphire Substrate or silicon carbide substrates or silicon substrate.N-type layer 310 includes high temperature GaN cushion and n-GaN layer (not shown)；Luminescent layer 320 is stacked with GaN barrier layer (not shown) periodic layer by InGaN well layer, and its periodicity is 4 ~ 12；P-type layer 330 is p-type GaN；Cushion 400 is aluminium nitride material, promotes the lattice quality of epitaxial layer.P-type dopant can be selected from least one in Be, Mg, Ca, Sr, Ba, and N type dopant can be selected from least one in Si, Ge, Sn, Pb.
With continued reference to accompanying drawing 1, heat-conducting layer 200 provided by the present invention is made up of with Graphene stratum granulosum 220 the most alternately laminated aln layer 210, and specifically, in heat-conducting layer 200, aln layer 210 is 2 ~ 15 with the alternately laminated periodicity of Graphene stratum granulosum 220.Simultaneously, for realizing the progressively heat sinking function of bottom, in heat-conducting layer 200, the particle coverage of Graphene stratum granulosum 220 is incremented by or change of successively decreasing from bottom to up, simultaneously, for improving the interface incompatibility of aln layer 210 and Graphene stratum granulosum 220, obtaining high-quality aln layer 210, its thickness changing trend keeps consistent with the particle 221 coverage rate variation tendency of Graphene stratum granulosum 220, reduces substrate 100 in the interface incompatibility with Graphene stratum granulosum 220.Certainly, the particle 221(of Graphene stratum granulosum 220 such as accompanying drawing 2 in heat-conducting layer 200) coverage rate from bottom to up be incremented by or change of successively decreasing, when making device work under big electric current, reduce because amount of heat can not shed the impact on device photoelectric performance and light extraction efficiency in time, improve the service life of device.
The present embodiment, preferably in heat-conducting layer, particle 221 coverage rate of Graphene stratum granulosum 220 is incremented by the most successively, simultaneously, the thickness of aln layer 210 increases the most successively, during epitaxial growth, make temperature speed when substrate 100 epitaxial layers 300 is conducted faster so that the instantaneous local temperature of substrate 100 declines accordingly, such that it is able to the angularity in reduction epitaxial process, improve uniformity and the yields of die terminals processing procedure of epitaxial wafer photoelectric properties；Wherein, the thickness of aln layer 210 is 15 ~ 50；The particle 210 a size of 5 ~ 1000 of Graphene stratum granulosum 220, coverage rate is 10% ~ 80%.
Referring to accompanying drawing 3, the present invention also provides for the preparation method of a kind of light emitting diode with heat-conducting layer 200, at least includes: provides a substrate 100, prepares heat-conducting layer 200 on substrate, then deposit epitaxial layers 300 on heat-conducting layer 200, epitaxial layer 300 includes N-type 310, luminescent layer 320 and p-type 330.Wherein, referring to accompanying drawing 4, the concrete preparation process of described heat-conducting layer 200 is as follows:
1) on substrate 100, an aln layer 210 is deposited；
2) on described aln layer 210, a Graphene stratum granulosum 220 is covered；
3) repeat the above steps 1) ~ 2) repeatedly, form the heat-conducting layer 200 being made up of aln layer 210 and the Graphene stratum granulosum 220 of periodicity stacking.
Wherein, aln layer 210 and the alternately laminated periodicity of Graphene stratum granulosum 220 are 2 ~ 15, simultaneously, for improving heat-conducting layer 200 and epitaxial layer 300 interface inconsistent problem further, described light emitting diode is also included between heat-conducting layer 200 and epitaxial layer the step depositing a cushion 400, the aluminium nitride that cushion 400 deposits for physical vaporous deposition.
Aln layer 210 and the Graphene stratum granulosum 220 of the periodicity stacking that the present invention provides have preferable thermal conductivity, temperature speed when substrate 100 epitaxial layers 300 is conducted can be made faster, the instantaneous local temperature of substrate 100 can decline accordingly, on the one hand reduce reduction angularity during epitaxial growth, and then make the uniformity of epitaxial layer 300 more preferable.Simultaneously, when device works under big electric current, owing in heat-conducting layer 200, Graphene stratum granulosum 220 has excellent thermal conductivity, too high because of the uneven local temperature caused of dispelling the heat when reducing device work, and then the light efficiency that causes and the decline of performance, and the reduction in service life.Additionally Graphene stratum granulosum 220 has preferable light transmission, hardly picks up light, so can increase light extraction efficiency compared with simple aln layer 210.
It should be appreciated that above-mentioned specific embodiments is only the preferred embodiments of the present invention, the present invention is not played any restriction effect.Any person of ordinary skill in the field; in the range of without departing from technical scheme; the technical scheme that the invention discloses and technology contents are made the variations such as any type of equivalent or amendment; all belong to the content without departing from technical scheme, within still belonging to protection scope of the present invention.
Claims (11)
1. a light emitting diode with heat-conducting layer, at least include a substrate, and N-type layer, luminescent layer and the P-type layer being sequentially located on substrate, it is characterized in that: insert a heat-conducting layer between described substrate and N-type layer, described heat-conducting layer is made up of with Graphene stratum granulosum the most alternately laminated aln layer.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: the particle coverage of Graphene stratum granulosum increasing or decreasing from bottom to up change in described heat-conducting layer.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: in described heat-conducting layer, the thickness changing trend of aln layer keeps consistent with the particle coverage variation tendency of described Graphene stratum granulosum.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: the particle size of described Graphene stratum granulosum is 5 ~ 1000.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: the particle coverage excursion of described Graphene stratum granulosum is 10% ~ 80%.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: the thickness of described aln layer is 15 ~ 50.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: the described aln layer periodicity alternately laminated with Graphene stratum granulosum is 2 ~ 15.
A kind of light emitting diode with heat-conducting layer the most according to claim 1, it is characterised in that: also include a cushion between described heat-conducting layer and described N-type layer.
9. there is a preparation method for the light emitting diode of heat-conducting layer, at least comprise the steps:
One substrate is provided；
N-type layer, luminescent layer and P-type layer it is sequentially depositing on described substrate；
It is characterized in that: before depositing described N-type layer, be also included in the step depositing a heat-conducting layer on described substrate, particularly as follows:
1) on substrate, an aln layer is deposited；
2) on described aln layer, a Graphene stratum granulosum is covered；
3) repeat the above steps 1) ~ 2) repeatedly, form the heat-conducting layer being made up of the most alternately laminated aln layer and Graphene stratum granulosum.
The preparation method of a kind of light emitting diode with heat-conducting layer the most according to claim 9, it is characterised in that: also include the step depositing a cushion between described heat-conducting layer and the deposition step of N-type layer.
The preparation method of 11. a kind of light emitting diodes with heat-conducting layer according to claim 9, it is characterised in that: described step 1) ~ 2) repeat 2 ~ 15 times.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106340575A (en) * | 2016-11-22 | 2017-01-18 | 芜湖德豪润达光电科技有限公司 | Gallium-nitride-based photoelectric device epitaxial structure having graphene layer and preparation method thereof |
| CN109411579A (en) * | 2018-01-06 | 2019-03-01 | 李丹丹 | Semiconductor devices and preparation method thereof with graphene-structured |
| CN110531575A (en) * | 2018-05-24 | 2019-12-03 | 卡西欧计算机株式会社 | Light supply apparatus and projection arrangement |
| CN111613698A (en) * | 2020-05-22 | 2020-09-01 | 青岛粲耀新材料科技有限责任公司 | Graphene intercalation III-group nitride semiconductor composite film and preparation method thereof |
| CN114005902A (en) * | 2021-11-05 | 2022-02-01 | 电子科技大学中山学院 | Inverted multi-junction solar cell based on GaAs substrate |
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| CN111613698B (en) * | 2020-05-22 | 2020-12-01 | 山西穿越光电科技有限责任公司 | Graphene intercalation III-group nitride semiconductor composite film and preparation method thereof |
| CN114005902A (en) * | 2021-11-05 | 2022-02-01 | 电子科技大学中山学院 | Inverted multi-junction solar cell based on GaAs substrate |
| CN114005902B (en) * | 2021-11-05 | 2023-08-22 | 电子科技大学中山学院 | Inverted multi-junction solar cell based on GaAs substrate |
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