CN105762203A - Method for printing photovoltaic electrodes of different shapes - Google Patents
Method for printing photovoltaic electrodes of different shapes Download PDFInfo
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- CN105762203A CN105762203A CN201610316609.9A CN201610316609A CN105762203A CN 105762203 A CN105762203 A CN 105762203A CN 201610316609 A CN201610316609 A CN 201610316609A CN 105762203 A CN105762203 A CN 105762203A
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- cell piece
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- photoresist
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000007639 printing Methods 0.000 title claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 32
- 238000001035 drying Methods 0.000 claims abstract description 26
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims description 36
- 239000002002 slurry Substances 0.000 claims description 27
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000001788 irregular Effects 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- 230000002427 irreversible effect Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000004925 denaturation Methods 0.000 abstract 1
- 230000036425 denaturation Effects 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a method for printing photovoltaic electrodes of the different shapes. The method comprises the steps of photoresist applying, prebaking, photoetching exposing, developing, postbaking, paste applying, drying, photoresist removing, sintering and the like. According to the method, graphical printing coating of paste is achieved through the principle that the solubility of photoresist in solvent (such as methyl alcohol and ethyl alcohol) significantly changes after the photoresist is subjected to irreversible degradation and denaturation under ultraviolet irradiation. Compared with a traditional silk screen printing method, the method has the advantages that the defects that in the traditional silk screen printing method, print graphs are single, the paste surface is uneven, the arrises have more deckle edges, the paste particle size is limited, and line breaking occurs in virtual printing are overcome, the advantages of free graph selectivity, high precision (larger than or equal to 2 micrometers), good technological stability and the like are achieved, and a great practical value is achieved.
Description
Technical field
The invention belongs to photovoltaic cell field, relate to a kind of method printing difform photovoltaic electrode, be specifically related to use photoetching process to be coated with the various slurries that print is used for solar batteries, to realize the printing of slurry arbitrary graphic.
Background technology
Modern age, solar energy history can trace back to France's engineer Saloman moral Cox, 1615, and he has invented the first in the world platform and has been added hot-air by the utilization of Driven by Solar Energy and make its expansion work and the electromotor that draws water.1954, three scientists such as the proper guest (Charbin) of AT&T Labs of the U.S. successfully develop first practical monocrystalline Silicon p-n junction solar cell (conversion efficiency is 6%) in the world, and this indicates that photovoltaic applied research is entered the new stage by the mankind.
In 20th century, being subject to the finiteness of the resource such as oil, natural gas and the impact of oil exporting country's control due to the mankind, there occurs worldwide " energy crisis ", this makes the research work of solar energy be promoted further and develop.Especially photovoltaic cell industry, under the support energetically of national governments, it obtains swift and violent progress, time lower mono-crystalline silicon most high conversion efficiency reached 24.7% (University of New South Wales), the most high conversion efficiency of polysilicon has reached 20.3% (the not bright Hough institute of Germany).
The application of photovoltaic generating system now is widely, little to each electronic product, such as solar energy wrist-watch, solar energy TV, solar telephone etc., big to civilian public basic installations, such as photovoltaic roof, optical road lamp, fire prevention observation and electric power electrical measurement power supply etc., throughout house, industry, building etc..In global range, the large-sized photovoltaic power station more than 200kW has 800, and the SolarparkPocking grid-connected photovoltaic power station total capacity being wherein positioned at Germany reaches 10MW.
The printing of photovoltaic cell is adopt vacuum evaporation or electroless plating the earliest, commonly used is silk-screen printing technique at present, it is low for equipment requirements, and industrial pollution can be reduced, but in printing precision, printing planarization and the printing of many slurries, there is bigger deficiency, particularly on many slurries print, it is necessary to spend the long period that equipment is debugged.
Summary of the invention
It is an object of the invention to solve at least the above and/or defect, and the advantage that at least will be described later is provided.
In order to realize these purposes according to the present invention and further advantage, it is provided that a kind of method printing difform photovoltaic electrode, comprise the following steps:
Step one, cell piece is placed on photoresist spin coater, at its surface spin coating one layer photoetching glue, then dries；
Step 2, the cell piece of drying is put in the ultraviolet exposure machine being provided with special pattern reticle, irradiation under ultraviolet ray；
Step 3, the cell piece after irradiation under ultraviolet ray is put into developer solution carries out develop to expose cell piece substrate, take out after 30～60 seconds and dry, obtaining patterned cell piece；
Step 4, patterned cell piece is placed on spin coater, at its surface spin coating one layer solar slurry, takes out and dry；
Step 5, being put into and soak in organic solvent to remove photoresist by the cell piece that step 4 is dried, then deionized water cleans, drying for standby；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered, obtain difform photovoltaic electrode.
Preferably, in described step one, the photoresist of cell piece surface spin coating is positive glue or negative glue, and the rotating speed of spin coating is 300～700r/min, and the thickness of spin coating is 1～10 micron；In described step one, drying and adopt baking oven formula or hot plate type, the temperature of drying is 60～100 DEG C, the time is 30s～60s.
Preferably, before performing step one, cell piece nitrogen gun is purged 5～10 seconds.
Preferably, in described step 2, the time of irradiation under ultraviolet ray is 5～15 seconds.
Preferably, described special pattern reticle is any one in square figure reticle, circular pattern reticle, triangular pattern photolithography plate, irregular figure photolithography plate, polygonal shape photolithography plate, ellipse figure photolithography plate.
Preferably, in described step 3, drying and adopt baking oven formula or hot plate type, the temperature of drying is 100～150 DEG C, the time is 1～2min.
Preferably, in described step 4, the viscosity of the solar energy slurry of cell piece spin coating is 10～400Pa s, thickness is 20～30 microns.
Preferably, in described step 4, the rotating speed of spin coating be 300～700r/min, drying temperature be 150～300 DEG C；In described step 5, organic solvent is methanol or ethanol, and the time of immersion is 1～5 minute.
Preferably, described solar energy slurry is any one in positive silver paste, back silver paste, back aluminum slurry.
Preferably, if described solar energy slurry is positive silver paste or back silver paste, then in step 6, sintering temperature is 870～920 DEG C；If described solar energy slurry is back aluminum slurry, then in step 6, sintering temperature is 780～840 DEG C.
The present invention by being coated with a layer photoetching glue on cell silicon chip, and after front baking, exposure, development, after bake, must arrive surface has the cell silicon chip of certain photoetching offset plate figure；Again at its surface-coated one layer solar slurry, dry remove photoresist after, a patterned slurry, figure 1 illustrates printing difformity electrode schematic flow sheet.The present invention utilizes photoetching to realize the printing of solar energy slurry arbitrary graphic, and by photoresist before and after ultraviolet radiation, its dissolubility in a solvent changes and realizes the graphical printing of slurry.Photoresist, also referred to as photoresist, is a kind of light-sensitive material, and after it is subject to illumination, characteristic can change.Photoresist have positive glue and negative glue point.Positive glue is after overexposure, and the part being subject to illumination becomes easy dissolving, is dissolved after development, leaves behind and is not formed figure by the part of illumination；And bear glue and lack on the contrary, the part being subject to illumination can become to not readily dissolve, after development, stay illumination part to form figure.
The present invention at least includes following beneficial effect: the present invention utilizes photoresist after there is irreversible degraded degeneration under ultraviolet radiation, there is principle of notable change in its dissolubility in solvent (such as methanol, ethanol), it is achieved that slurry graphically print painting.This method is compared with traditional silk screen print method, overcome that the latter exists printed pattern is single, pulp surface height is uneven, have the defects such as more burr, pulp particle print broken string size-constrained, empty on rib, there is the advantages such as any washability of figure, high precision (>=2um) and good technology stability, there is bigger practical value, and the inventive method is simple to operate, precision is high, slurry is compatible by force.
Part is embodied by the further advantage of the present invention, target and feature by description below, and part is also by by being understood by those skilled in the art the research of the present invention and practice.
Accompanying drawing illustrates:
Fig. 1 is the process flow diagram that the present invention prints difformity electrode；
Fig. 2 is the structural representation of special pattern reticle of the present invention；
Fig. 3 is the optical microscopy map of the circle back of the body aluminum electrode of the embodiment of the present invention 1 preparation；
Fig. 4 is the optical microscopy map of the square positive silver electrode of the embodiment of the present invention 2 preparation.
Detailed description of the invention:
Below in conjunction with accompanying drawing, the present invention is described in further detail, to make those skilled in the art can implement according to this with reference to description word.
Should be appreciated that used herein such as " have ", existence or the interpolation of other elements one or more or its combination do not allotted in " comprising " and " including " term.
Embodiment 1:
A kind of method printing difform photovoltaic electrode, comprises the following steps:
Step one, by cell piece with nitrogen gun purge 5～10 seconds, dedusting it；Being placed in by cell piece on photoresist spin coater, at the photoresist (model AZ4620) of its surface spin coating one layer 6 microns, be subsequently placed on the hot plate of 90 DEG C and carry out front baking, the time is 30s；The rotating speed of described spin coating is 300r/min；
Step 2, the cell piece of drying is put in be provided with circular pattern reticle (such as Fig. 2, in ultraviolet exposure machine a), irradiation under ultraviolet ray 11s；
Step 3, being put into by the cell piece after irradiation under ultraviolet ray and carry out in developer solution developing to expose cell piece substrate, take out, be placed on the hot plate that temperature is 130 DEG C and carry out after bake after 45 seconds, the time is 1 minute, obtains the cell piece with circular pattern；
Step 4, the cell piece of circular pattern is placed on spin coater, at the back aluminum slurry of its surface spin coating one layer 20 microns, takes out at 240 DEG C and dry；The rotating speed of described spin coating is 300r/min；
Step 5, by step 4 dry cell piece put in methanol soak 3 minutes to remove photoresist, then deionized water cleaning, drying for standby under room temperature；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered at the temperature of 820 DEG C, obtain photovoltaic circular back of the body aluminum electrode (as shown in Figure 3).
Embodiment 2:
A kind of method printing difform photovoltaic electrode, comprises the following steps:
Step one, employing method described in embodiment 1；
Step 2, the cell piece of drying is put in be provided with square figure reticle (such as Fig. 2, in ultraviolet exposure machine b), irradiation under ultraviolet ray 11s；
Step 3, being put into by the cell piece after irradiation under ultraviolet ray and carry out in developer solution developing to expose cell piece substrate, take out, be placed on the hot plate that temperature is 130 DEG C and carry out after bake after 45 seconds, the time is 1 minute, obtains having square patterned cell piece；
Step 4, square patterned cell piece is placed on spin coater, at the positive silver paste of its surface spin coating one layer 20 microns, takes out at 300 DEG C and dry；The rotating speed of described spin coating is 300r/min；
Step 5, by step 4 dry cell piece put in methanol soak 3 minutes to remove photoresist, then deionized water cleaning, drying for standby under room temperature；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered at the temperature of 890 DEG C, obtain photovoltaic with square back of the body aluminum electrode (as shown in Figure 4).
Embodiment 3:
A kind of method printing difform photovoltaic electrode, comprises the following steps:
Step one, by cell piece with nitrogen gun purge 5～10 seconds, dedusting it；Being placed in by cell piece on photoresist spin coater, at the photoresist (model AZ4620) of its surface spin coating one layer 5 microns, be subsequently placed on the hot plate of 80 DEG C and carry out front baking, the time is 60s；The rotating speed of described spin coating is 700r/min；
Step 2, the cell piece of drying is put in be provided with triangular pattern reticle (such as Fig. 2, in ultraviolet exposure machine c), irradiation under ultraviolet ray 15s；
Step 3, being put into by the cell piece after irradiation under ultraviolet ray and carry out in developer solution developing to expose cell piece substrate, take out, be placed on the hot plate that temperature is 150 DEG C and carry out after bake after 50 seconds, the time is 2 minutes, obtains the cell piece with triangular pattern；
Step 4, the cell piece of triangular pattern is placed on spin coater, at the back silver paste of its surface spin coating one layer 30 microns, takes out at 300 DEG C and dry；The rotating speed of described spin coating is 600r/min；The viscosity of described back silver paste is 100Pa s；
Step 5, by step 4 dry cell piece put in methanol soak 3 minutes to remove photoresist, then deionized water cleaning, drying for standby under room temperature；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered at the temperature of 880 DEG C, obtain photovoltaic triangle and carry on the back silver electrode.
Embodiment 4:
A kind of method printing difform photovoltaic electrode, comprises the following steps:
Step one, by cell piece with nitrogen gun purge 5～10 seconds, dedusting it；Being placed in by cell piece on photoresist spin coater, at the photoresist (model AZ4620) of its surface spin coating one layer 10 microns, be subsequently placed on the hot plate of 70 DEG C and carry out front baking, the time is 40s；The rotating speed of described spin coating is 500r/min；
Step 2, the cell piece of drying is put in be provided with five-sided figure reticle (such as Fig. 2, in ultraviolet exposure machine d), irradiation under ultraviolet ray 8s；
Step 3, being put into by the cell piece after irradiation under ultraviolet ray and carry out in developer solution developing to expose cell piece substrate, take out, be placed on the hot plate that temperature is 130 DEG C and carry out after bake after 30 seconds, the time is 1.5 minutes, obtains the cell piece with five-sided figure；
Step 4, the cell piece of five-sided figure is placed on spin coater, at the positive silver paste of its surface spin coating one layer 25 microns, takes out at 200 DEG C and dry；The rotating speed of described spin coating is 400r/min；The viscosity of described positive silver paste is 150Pa s；
Step 5, by step 4 dry cell piece put in methanol soak 4 minutes to remove photoresist, then deionized water cleaning, drying for standby under room temperature；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered at the temperature of 900 DEG C, obtain the positive silver electrode of photovoltaic pentagon.
Embodiment 5:
A kind of method printing difform photovoltaic electrode, comprises the following steps:
Step one, by cell piece with nitrogen gun purge 5～10 seconds, dedusting it；Being placed in by cell piece on photoresist spin coater, at the photoresist (model AZ4620) of its surface spin coating one layer 5 microns, be subsequently placed on the hot plate of 100 DEG C and carry out front baking, the time is 30s；The rotating speed of described spin coating is 600r/min；
Step 2, the cell piece of drying is put in be provided with elliptical graphic reticle (such as Fig. 2, in ultraviolet exposure machine e), irradiation under ultraviolet ray 10s；
Step 3, being put into by the cell piece after irradiation under ultraviolet ray and carry out in developer solution developing to expose cell piece substrate, take out, be placed on the hot plate that temperature is 120 DEG C and carry out after bake after 40 seconds, the time is 2 minutes, obtains the cell piece with elliptical graphic；
Step 4, the cell piece of elliptical graphic is placed on spin coater, at the back aluminum slurry of its surface spin coating one layer 20 microns, takes out at 160 DEG C and dry；The rotating speed of described spin coating is 500r/min；The viscosity of described back aluminum slurry is 200Pa s；
Step 5, by step 4 dry cell piece put in ethanol soak 3 minutes to remove photoresist, then deionized water cleaning, drying for standby under room temperature；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered at the temperature of 800 DEG C, obtain photovoltaic oval back of the body aluminum electrode.
Embodiment 6:
A kind of method printing difform photovoltaic electrode, comprises the following steps:
Step one, by cell piece with nitrogen gun purge 5～10 seconds, dedusting it；Being placed in by cell piece on photoresist spin coater, at the photoresist (model AZ4620) of its surface spin coating one layer 3 microns, be subsequently placed on the hot plate of 80 DEG C and carry out front baking, the time is 50s；The rotating speed of described spin coating is 400r/min；
Step 2, the cell piece of drying is put in be provided with irregular figure reticle (such as Fig. 2, in ultraviolet exposure machine f), irradiation under ultraviolet ray 12s；
Step 3, being put into by the cell piece after irradiation under ultraviolet ray and carry out in developer solution developing to expose cell piece substrate, take out, be placed on the hot plate that temperature is 150 DEG C and carry out after bake after 50 seconds, the time is 2 minutes, obtains the cell piece with irregular figure；
Step 4, the cell piece of irregular figure is placed on spin coater, at the back silver paste of its surface spin coating one layer 26 microns, takes out at 180 DEG C and dry；The rotating speed of described spin coating is 400r/min；The viscosity of described back silver paste is 300Pa s；
Step 5, by step 4 dry cell piece put in ethanol soak 3 minutes to remove photoresist, then deionized water cleaning, drying for standby under room temperature；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered at the temperature of 920 DEG C, obtain photovoltaic irregular shape back of the body silver electrode.
Although embodiment of the present invention are disclosed as above, but listed utilization that it is not restricted in description and embodiment, it can be applied to various applicable the field of the invention completely, for those skilled in the art, it is easily achieved other amendment, therefore, under the general concept limited without departing substantially from claim and equivalency range, the present invention is not limited to specific details and shown here as the legend with description.
Claims (10)
1. the method printing difform photovoltaic electrode, it is characterised in that comprise the following steps:
Step one, cell piece is placed on photoresist spin coater, at its surface spin coating one layer photoetching glue, then dries；
Step 2, the cell piece of drying is put in the ultraviolet exposure machine being provided with special pattern reticle, irradiation under ultraviolet ray；
Step 3, the cell piece after irradiation under ultraviolet ray is put into developer solution carries out develop to expose cell piece substrate, take out after 30～60 seconds and dry, obtaining patterned cell piece；
Step 4, patterned cell piece is placed on spin coater, at its surface spin coating one layer solar slurry, takes out and dry；
Step 5, being put into and soak in organic solvent to remove photoresist by the cell piece that step 4 is dried, then deionized water cleans, drying for standby；
Step 6, dry cell piece is put into meshbeltfurnace it is sintered, obtain difform photovoltaic electrode.
2. the method printing difform photovoltaic electrode as claimed in claim 1, it is characterised in that in described step one, the photoresist of cell piece surface spin coating is positive glue or negative glue, and the rotating speed of spin coating is 300～700r/min, and the thickness of spin coating is 1～10 micron；In described step one, drying and adopt baking oven formula or hot plate type, the temperature of drying is 60～100 DEG C, the time is 30s～60s.
3. the method printing difform photovoltaic electrode as claimed in claim 1, it is characterised in that before performing step one, purges cell piece nitrogen gun 5～10 seconds.
4. the method printing difform photovoltaic electrode as claimed in claim 1, it is characterised in that in described step 2, the time of irradiation under ultraviolet ray is 5～15 seconds.
5. the method printing difform photovoltaic electrode as claimed in claim 1, it is characterized in that, described special pattern reticle is any one in square figure reticle, circular pattern reticle, triangular pattern photolithography plate, irregular figure photolithography plate, polygonal shape photolithography plate, ellipse figure photolithography plate.
6. the as claimed in claim 1 method printing difform photovoltaic electrode, it is characterised in that in described step 3, dry and adopt baking oven formula or hot plate type, the temperature of drying is 100～150 DEG C, the time is 1～2min.
7. the as claimed in claim 1 method printing difform photovoltaic electrode, it is characterised in that in described step 4, the viscosity of the solar energy slurry of cell piece spin coating is 10～400Pa s, thickness is 20～30 microns.
8. the as claimed in claim 1 method printing difform photovoltaic electrode, it is characterised in that in described step 4, the rotating speed of spin coating be 300～700r/min, drying temperature be 150～300 DEG C；In described step 5, organic solvent is methanol or ethanol, and the time of immersion is 1～5 minute.
9. the method printing difform photovoltaic electrode as claimed in claim 1, it is characterised in that described solar energy slurry is any one in positive silver paste, back silver paste, back aluminum slurry.
10. the method printing difform photovoltaic electrode as claimed in claim 9, it is characterised in that if described solar energy slurry is positive silver paste or back silver paste, then in step 6, sintering temperature is 870～920 DEG C；If described solar energy slurry is back aluminum slurry, then in step 6, sintering temperature is 780～840 DEG C.
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| CN201610316609.9A CN105762203A (en) | 2016-05-12 | 2016-05-12 | Method for printing photovoltaic electrodes of different shapes |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109148617A (en) * | 2018-08-13 | 2019-01-04 | 苏州迈为科技股份有限公司 | A method of depth-width ratio conductive electric wire is prepared based on solar panel |
| CN110071181A (en) * | 2018-01-22 | 2019-07-30 | 福建金石能源有限公司 | A kind of pad pasting of solar battery, exposure preparation method |
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- 2016-05-12 CN CN201610316609.9A patent/CN105762203A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071181A (en) * | 2018-01-22 | 2019-07-30 | 福建金石能源有限公司 | A kind of pad pasting of solar battery, exposure preparation method |
| CN109148617A (en) * | 2018-08-13 | 2019-01-04 | 苏州迈为科技股份有限公司 | A method of depth-width ratio conductive electric wire is prepared based on solar panel |
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Application publication date: 20160713 |