CN105742377A - 一种具有带通滤波功能的可见光通信用光电探测器 - Google Patents
一种具有带通滤波功能的可见光通信用光电探测器 Download PDFInfo
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Abstract
本发明涉及可见光光电探测器的技术领域，更具体地，涉及一种具有带通滤波功能的可见光通信用光电探测器。一种具有带通滤波功能的可见光通信用光电探测器，包括衬底，利用外延生长法，依次生长在衬底上的缓冲层，n型GaN层，InGaN/GaN多重量子阱有源层，p型GaN层，利用电子束蒸发设备沉积在p型GaN层上的P型金属电极和一维缺陷镜像对称光子晶体滤波器，或者沉积在对可见光透明的衬底背面上的一维缺陷镜像对称光子晶体滤波器，以及沉积在n型GaN层上的N型金属电极。该滤波器能够对入射的信号光进行选择性滤波，滤去不在VLC系统信号源发射光谱范围内的干扰信号，同时不需要外加滤波器，可集成度高。
Description
技术领域
本发明涉及可见光光电探测器的技术领域，更具体地，涉及一种具有带通滤波功能的可见光通信用光电探测器。
背景技术
近年来，随着白光发光二极管（LightEmittingDiode，LED）被应用于通信系统的信号发射端，可见光通信技术（VisibleLightCommunication,VLC）逐渐为人们所关注。由于白光发光二极管（LED）具有高的响应灵敏度和优良的调制特性，在其作为照明用具的同时，也能够将信号调制到其发射波段上进行传输，这样就能够实现白光LED照明与通信的双重功能。相比于目前的WiFi等无线通信技术，VLC具有（1）传输速率快；（2）保密性好；（3）不受电磁干扰；（4）无需申请无线频谱许可证等一系列优势。
然而，在现行的VLC技术中，暴露出一些突出的问题：在VLC通信系统中，存在着强烈的背景噪声和固有的电路噪声；同时随着传输距离的增大，光接收器接受到的信号渐趋微弱，常导致接收端接收到的信号与噪声的功率之比（SignalNoiseRatio,SNR）小于1。因此为了在高速传输下精确的接受信号，采用灵敏度高，响应速度快，噪声小的光电探测器是构建可见光通信系统的必要条件之一。但目前被用作可见光通信系统接收端的Si基、GaAs、GaP基探测器存在响应峰值波长与光源发射波长不匹配的问题，同时还存在需要外加滤波器导致的探测器体积大、滤波损耗和成本增加等缺点。针对上述问题，为保证通信的准确度、灵敏度，亟待开发出具有滤波特性的、灵敏度高的新型可将光光电探测器。
目前在VLC系统中用作光源的白光LED主要有两种形式：（1）InGaN/GaN多重量子阱蓝光LED激发黄色荧光粉发出白光；（2）InGaN蓝光LED与红、绿LED组合，发出白光。因此以InGaN为感光材料能够使探测器的吸收光谱与光源的发射光谱保持一致，同时InGaN材料还具有量子效率高、响应速度快和良好的波长选择特性等优点。然而，由于InGaN外延材料的结晶质量一直有待改善，这使得目前制备的InGaN光电探测器通过材料特性实现滤波功能变得十分困难，难以达到VLC系统实际应用的要求。
众所周知，InGaN/GaN多重量子阱LED的工作原理是在正向导通的情况下，空穴和电子在有源区量子阱层中复合发光。与LED的发光工作机制相反，在向LED芯片施加小正向偏置电压（小于导通偏压）或反向偏压时，在其量子阱有源区处会存在一个耗尽区，当具有光子能量大于InGaN量子阱带隙能量的入射光通过正向电极入射（或通过衬底一侧）进入该耗尽区，会激发出光生电子-空穴对，这些光生载流子在耗尽区内电场的作用下流向器件的正负电极，形成光电流。因此，如果施加适当的偏置电压，GaN基LED芯片可用来探测入射的可见光信号。但是，由于可见光通信系统的工作环境中通常存在着背景噪声干扰，使得利用GaN基LED作为VLC系统接收端探测器的信噪比过低；同时，由于量子阱有源区中的极化电场作用，以及耗尽层扩展至p型GaN区域，导致了LED芯片的响应光谱峰值波长发生偏移，在短波长区有较强光响应，不利于提高SNR。
发明内容
本发明为克服上述现有技术所述的至少一种缺陷，提供一种具有带通滤波功能的可见光通信用光电探测器，利用GaN基InGaN/GaN多重量子阱LED结构作为光电探测器，并在器件芯片的光信号入射端面沉积一个多层结构的可调节滤波特性的一维缺陷镜像对称光子晶体滤波器，该滤波器能够对入射的信号光进行选择性滤波，滤去不在VLC系统信号源发射光谱范围内的干扰信号，同时不需要外加滤波器，可集成度高，且该滤波器使用的材料结构为常见的GaN基LED结构，外延工艺成熟，从而回避了InGaN材料生长中的一系列难题。
为解决上述技术问题，本发明采用的技术方案是：一种具有带通滤波功能的可见光通信用光电探测器，其中，包括衬底，利用外延生长法，如分子束外延或金属有机化学气相沉淀外延法，依次生长在衬底上的缓冲层，n型GaN层，InGaN/GaN多重量子阱有源层，p型GaN层，利用电子束蒸发设备沉积在p型GaN层上的P型金属电极和一维缺陷镜像对称光子晶体滤波器，或者沉积在对可见光透明的衬底背面上的一维缺陷镜像对称光子晶体滤波器，以及沉积在n型GaN层上的N型金属电极；
探测器的制备工艺步骤是：
步骤1：在P型GaN层上旋涂一层光刻胶，光刻显影后暴露出需要刻蚀的部分P型GaN层；
步骤2：使用干法刻蚀，刻蚀暴露出的P型GaN层，刻蚀深度到N型GaN层，形成台阶结构；
步骤3：利用光刻和电子束蒸发技术分别在N型GaN层台阶处和P型GaN边缘处制备环形电极；
步骤4：对N型电极和P型电极进行合金化处理；
步骤5：利用光刻和电子束蒸发技术在P型GaN层裸露处制备一维缺陷镜像对称光子晶体滤波器，或者不需要光刻，直接在对可见光透明的衬底背面制备一维缺陷镜像对称光子晶体滤波器。
其中所述的一维缺陷镜像对称光子晶体滤波器，沉积的介质薄膜材料分别为TiO2和SiO2，其折射率范围分别为2.35~2.82和1.4~1.5；TiO2层实际厚度取值范围为33.7nm至83.0nm，SiO2层实际厚度取值范围为63.3nm至139.3nm，单个周期的实际总厚度不超过222.3nm；一维缺陷镜像对称光子晶体滤波器结构中的周期参数m取值为m≥4，且m取值为正整数；缺陷层使用材料为TiO2，折射率范围为2.35~2.82，实际厚度单位数n取值为正实数。
另外，由这种结构的探测器组成的滤波带通可见光通信用光电探测器阵列也包含在本发明的保护范围内。
与现有技术相比，有益效果是：本发明利用GaN基InGaN/GaN多重量子阱LED结构作为光电探测器，并在器件芯片的光信号入射端面沉积一个多层结构的可调节滤波特性的一维缺陷镜像对称光子晶体滤波器，该滤波器能够对入射的信号光进行选择性滤波，滤去不在VLC系统信号源发射光谱范围内的干扰信号，同时不需要外加滤波器，可集成度高，且该滤波器使用的材料结构为常见的GaN基LED结构，外延工艺成熟，从而回避了InGaN材料生长中的一系列难题。
附图说明
图1是本发明的具有带通滤波功能的可见光通信用光电探测器结构正入射结构图。
图2是本发明的具有带通滤波功能的可见光通信用光电探测器结构背入射结构图。
图3是本发明应用在探测器中的一维缺陷镜像对称光子晶体滤波器结构图。
图4是本发明一种确定结构的一维缺陷镜像对称光子晶体滤波器透射光谱图。
具体实施方式
附图仅用于示例性说明，不能理解为对本专利的限制；为了更好说明本实施例，附图某些部件会有省略、放大或缩小，并不代表实际产品的尺寸；对于本领域技术人员来说，附图中某些公知结构及其说明可能省略是可以理解的。附图中描述位置关系仅用于示例性说明，不能理解为对本专利的限制。
现结合附图对本发明进行详尽的描述。该方法适用于制备具有带通滤波功能的可见光通信用光电探测器，光信号从正面或者背面入射，一维缺陷镜像对称光子晶体滤波器具备滤波带通功能，滤波范围包含整个可见光范围，即380nm-780nm，具体滤波带通波段，可根据有源层的设计响应波长而定。
本实施例如图1给出了一种具备带通滤波功能的可见光通信用光电探测器结构，器件制备过程：衬底（1），衬底材料可选择蓝宝石、SiC或者Si等材料；利用外延生长法，如分子束外延或者金属有机化学气相沉积外延法，依次在衬底（1）上生长2μm的非掺杂GaN缓冲层(2)，1μm-3μm厚的N型GaN层(3)，电子浓度为1×1018/cm3~3×1019/cm3；InGaN/GaN多重量子阱层(4)，其中InGaN层厚度为1nm~5nm，In组分为0.16~0.22，GaN层的厚度为3nm~15nm，量子阱对数为3~8对；100~300nm厚的P型GaN层，空穴浓度为1×1017/cm3~5×1018/cm3。工艺过程如下：
步骤1：在P型GaN层上旋涂一层光刻胶，厚度为6μm，光刻显影后暴露出需要刻蚀的部分P型GaN层；
步骤2：使用干法刻蚀，刻蚀暴露出的P型GaN层，刻蚀深度到N型GaN层，形成台阶结构；
步骤3：利用光刻和电子束蒸发技术分别在N型GaN层台阶处和P型GaN边缘处制备环形电极；
步骤4：对N型电极和P型电极进行合金化处理；
步骤5：利用光刻和电子束蒸发技术在P型GaN层裸露处制备一维缺陷镜像对称光子晶体滤波器，或者不需要光刻，直接在对可见光透明的衬底背面制备一维缺陷镜像对称光子晶体滤波器。
本实施例中，一维缺陷镜像对称光子晶体滤波器（8）或者（9）由TiO2和SiO2两种高低折射率材料周期性排列构成，膜系结构为(HL)m(nH)(LH)m，其中H代表TiO2，L代表SiO2，m为周期数，取正整数；n为缺陷层厚度单位数，取正实数。该一维缺陷镜像对称光子晶体滤波器可通过调整TiO2层和SiO2层的厚度、缺陷层的厚度单位数n，以及结构中周期数m对入射光进行选择性滤波器，从而能够降低信号光的背景噪声，提升探测器的灵敏度。该探测器使用GaN基LED结构作为探测器的材料结构，入射光选择性透过一维缺陷镜像对称光子晶体滤波器（8）或者（9），到达有源层（4），产生光电流，从而形成光电响应。
其中TiO2层折射率为2.52，厚度为44.6nm，SiO2层折射率为1.46，厚度为77.0nm，周期数m取值为5，缺陷层材料为TiO2，折射率为2.52，厚度单位数n取值为2。图4为一维缺陷镜像对称光子晶体滤波器透射光谱图。
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。
Claims (10)
1.一种具有带通滤波功能的可见光通信用光电探测器，其特征在于，包括衬底（1），利用外延生长法，依次生长在衬底（1）上的缓冲层（2），n型GaN层（3），InGaN/GaN多重量子阱有源层（4），p型GaN层（5），利用电子束蒸发设备沉积在p型GaN层（5）上的P型金属电极（6）和一维缺陷镜像对称光子晶体滤波器（8），或者沉积在对可见光透明的衬底背面上的一维缺陷镜像对称光子晶体滤波器（9），以及沉积在n型GaN层（3）上的N型金属电极（7）；
探测器的制备工艺步骤是：
步骤1：在P型GaN层上旋涂一层光刻胶，光刻显影后暴露出需要刻蚀的部分P型GaN层；
步骤2：使用干法刻蚀，刻蚀暴露出的P型GaN层，刻蚀深度到N型GaN层，形成台阶结构；
步骤3：利用光刻和电子束蒸发技术分别在N型GaN层台阶处和P型GaN边缘处制备环形电极；
步骤4：对N型电极和P型电极进行合金化处理；
步骤5：利用光刻和电子束蒸发技术在P型GaN层裸露处制备一维缺陷镜像对称光子晶体滤波器，或者不需要光刻，直接在对可见光透明的衬底背面制备一维缺陷镜像对称光子晶体滤波器。
2.根据权利要求1所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的衬底材料使用双面抛光的蓝宝石。
3.根据权利要求1所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器，沉积的介质薄膜材料分别为TiO2和SiO2。
4.根据权利要求3所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器使用的材料TiO2和SiO2的折射率范围分别为2.35~2.82和1.4~1.5。
5.根据权利要求1所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器结构中的周期参数m取值为m≥4，且m取值为正整数。
6.根据权利要求3所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器结构中的TiO2层实际厚度取值范围为33.7nm至83.0nm。
7.根据权利要求3所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器结构中的SiO2层实际厚度取值范围为63.3nm至139.3nm。
8.根据权利要求1所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器结构中的单个周期的实际总厚度不超过222.3nm。
9.根据权利要求3所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的一维缺陷镜像对称光子晶体滤波器结构中的缺陷层使用材料为TiO2，实际厚度单位数n取值为正实数。
10.根据权利要求1所述的一种具有带通滤波功能的可见光通信用光电探测器，其特征在于：所述的器件结构中InGaN/GaN多重量子阱有源层的中InGaN的带隙宽度所对应的波长为380至780nm。
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